KR101100284B1 - Thin film deposition apparatus - Google Patents

Abstract

PURPOSE: A thin film depositing device is provided to uniformly supply a processing gas onto a substrate, thereby increasing the uniformity of a thin film deposited on a substrate. CONSTITUTION: A suscepter(310) supports a substrate. The suscepter moves in a processing chamber(300a). The shower head is arranged on the suscepter. The shower head supplies a processing gas onto the substrate. Elevation power of an elevation device(400) is transferred to a processing chamber through an elevation shaft(360).

Description

Thin Film Deposition Apparatus {THIN FILM DEPOSITION APPARATUS}

The present invention relates to a thin film deposition apparatus, and more particularly, to a plasma chemical vapor deposition (PECVD) apparatus for depositing a thin film on a substrate using a plasma.

Solar cells are devices that convert light energy into electrical energy using the properties of semiconductors. Such solar cells are classified into monocrystalline silicon solar cells, polycrystalline silicon solar cells, thin-film solar cells, and the like according to their types.

 Thin film solar cells are fabricated by depositing p, i, and n films on glass or plastic transparent substrates. Crystalline solar cells are fabricated by depositing antireflection films on silicon substrates. It may be deposited on a substrate by a (PECVD) process.

The present invention is to provide a thin film deposition apparatus that can improve the uniformity of the deposited thin film.

The objects of the present invention are not limited thereto, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

In order to achieve the above object, a thin film deposition apparatus according to an embodiment of the present invention, the processing chamber; A substrate support unit disposed in the processing chamber and supporting a substrate; And a shower head disposed on the substrate support unit and supplying a process gas to the substrate, wherein the shower head includes a plurality of gas channels formed to provide a flow path of the process gas, and the gas channels. An upper plate having gas injection holes formed therein and to which a high frequency current is applied to excite the process gas to generate a plasma; A baffle plate disposed under the upper plate and having a plurality of holes formed to uniformly distribute the flow of the process gas; And a spray plate disposed under the baffle plate and spraying the process gas supplied through the baffle plate onto the substrate.

According to an embodiment of the present disclosure, the gas channels, the gas injection holes, and the holes of the baffle plate may be provided to sequentially increase the resistance of the fluid flow.

According to the present invention, the uniformity of the thin film deposited on the substrate can be improved by supplying the process gas more uniformly on the substrate.

The drawings described below are for illustrative purposes only and are not intended to limit the scope of the invention.
1 is a perspective view of a PECVD apparatus for a large area substrate according to an embodiment of the present invention.
2 is a plan view illustrating a PECVD apparatus for a large area substrate according to an embodiment of the present invention.
Figure 3 is a side cross-sectional view of a large area substrate PECVD apparatus according to an embodiment of the present invention.
4A is a cross-sectional view of the process chamber with the susceptor in the down position.
4B is a cross-sectional view of the process chamber with the susceptor up;
5 is a cross-sectional view of the showerhead.
6 is a view showing the top structure of the upper plate.
7 is an enlarged perspective view of a main portion of FIG. 5.
8 is a view showing a modification of the upper plate.

Hereinafter, a thin film deposition apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. First, in adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are assigned to the same components as much as possible, even if shown on different drawings. In addition, in describing the present invention, when it is determined that the detailed description of the related well-known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted.

(Example)

1 is a perspective view of a PECVD apparatus according to an embodiment of the present invention, Figures 2 and 3 are a plan view and a side cross-sectional view of the PECVD apparatus according to an embodiment of the present invention.

1 to 3, the PECVD apparatus 1 is to perform a PECVD process on a large area substrate S for a solar cell, and includes a load lock chamber 100, a transfer chamber 200, and a plurality of substrates. Process module 300.

The load lock chamber 100 is disposed in front of the PECVD apparatus 1. The load lock chamber 100 has a structure in which four chambers are stacked, wherein two chambers are a loading chamber 110a on which a large area substrate S is waiting before processing, and the remaining two chambers are processing. The large area substrate S may be used as the unloading chamber 110b to stand by.

Each of the loading chamber 110a and the unloading chamber 110b has a first entry port 112 and a second entry port 114, and a stage 120 in which a large area substrate is placed is provided in an internal space. The preheating member 130 for preheating the large area substrate is installed in the stage 120 of the loading chamber 110a, and the large area substrate S processed in the process chamber is installed in the stage 120 of the unloading chamber 110b. Since it is placed, the cooling member 140 for lowering the temperature of the large area substrate is installed.

The large area substrate is loaded into the loading chamber 110a by the atmospheric transfer robot (not shown) or taken out from the unloading chamber 110b. Each of the loading chamber 110a and the unloading chamber 110b constituting the load lock chamber 100 has a conveying chamber 200 at a time when the conveying robot 210 of the conveying chamber 200 loads or unloads a large area substrate. The same (near) vacuum atmosphere is formed, and is converted to atmospheric pressure when the unprocessed large area substrate is supplied from the atmospheric conveyance robot or the processed large area substrate is to be taken out. That is, the loading / unloading chambers 110a and 110b of the load lock chamber 100 maintain their pressure while intersecting the vacuum state and the atmospheric pressure state in order to prevent the air pressure state of the conveying chamber 200 from changing. In order to process such pressure fluctuations as quickly as possible, the plurality of loading chambers 110a and unloading chambers 110b are partitioned. Of course, each chamber of the load lock chamber can be used for both loading and unloading without being divided into loading and unloading.

The transfer chamber 200 is located at the center of the load lock chamber 100 and the process module 300. The transfer chamber 200 is connected to the load lock chamber 100 and the process chambers 300a of the process module 300, and has a transfer robot 210 for conveying a large area substrate. The transfer robot 210 has a robot having one or two arm structures that can carry a large area substrate placed in the stage 120 of the loading chamber 110a and carry it into the process chamber 300a of the process module 300. It may be configured as.

In addition to the structure shown in the present embodiment, the transfer robot 210 provided in the transfer chamber 200 may use various robots used in a conventional solar cell manufacturing process and a flat panel display panel manufacturing process. For example, a robot having a double blade structure arm capable of handling two large area substrates S as one arm, a robot having one or more arms, or a robot employing a mixture thereof may be used. have.

Process modules 300 are arranged connected to the side with respect to the transfer chamber 200. In the present exemplary embodiment, three process modules 300 are disposed at intervals of 90 degrees with respect to the transfer chamber 200, but four to five process modules 300 may be arranged as necessary. have.

The process module 300 performs a plasma chemical vapor deposition (PECVD) process of depositing a thin film on a substrate using plasma. The substrate used in the thin film deposition process may be, for example, a transparent substrate made of glass or plastic used for the manufacture of a thin film solar cell, or a silicon substrate used for the manufacture of a crystalline solar cell. . The process module 300 is a tandem thin film in which an amorphous silicon (a-Si) film and a micro-crystalline silicon (mc-Si) film are sequentially stacked on a transparent substrate of a thin film solar cell. It is very suitable for carrying out the deposition process.

The process module 300 is a structure in which process chambers 300a for independently performing a plasma treatment process on a large area substrate are stacked. In this embodiment, the process module 300 includes four process chambers 300a. It is made of a stacked structure, but if the height is allowed, four or more process chambers may be stacked.

A lift device 400 having a lift driver 410 is installed below the process chamber 300a positioned at the bottom thereof, and the lift device 400 is a susceptor 310 installed in each of the four process chambers 300a. Elevate simultaneously. The lifting driving force of the lifting device 400 may be transmitted to the susceptors of the respective process chambers 300a through the lifting shafts 360. The process module 300 having such a structure can reduce the height of the equipment as much as possible, thereby stacking more process chambers 300a.

As such, the PECVD apparatus 1 of the present invention can increase the process and production flexibility by maximizing the number of (12 or more) process chambers 310 in the same area can maximize the productivity per device. In particular, the present invention is continuous to the amorphous silicon (a-Si) film and the micro-crystalline silicon (mc-Si) film that takes a longer deposition time than other thin films because the deposition thickness is about 20,000 Angstrom (2um) thick It is very suitable for the manufacturing process of tandem structured solar cell.

Tandem solar cells efficiently absorb the solar spectrum from the infrared to the ultraviolet to improve power generation efficiency.Amorphous silicon (a-Si) film and micro-crystalline silicon (mc) -Si) film is laminated.

4A is a cross sectional view of the process chamber with the susceptor in the down position, and FIG. 4B is a cross sectional view of the process chamber with the susceptor in the up position.

As shown in FIGS. 4A and 4B, the process chamber 300a provides a process region (reaction space) between the susceptor 310 and the showerhead 320. The process treatment region of the process chamber 300a has an open type that is not completely isolated from the plasma forming region of the other process chamber 300a stacked on the same process module 300.

The side wall of the process chamber 300a is provided with a slot valve 380 that determines whether the transfer chamber 200 is in communication with the reaction space, so that a large area substrate (from the transfer chamber 200 onto the susceptor 310) is formed. When S) is brought in (or when a large area substrate is taken out), the slot valve 380 is opened.

Lift pins 390 are installed in the process chamber 310. The lift pins 390 support the large area substrate S when the substrate is loaded or unloaded, and the substrate support is supported by the susceptor 310 below. It takes place in the lowered state. That is, when the large area substrate is brought in by the transfer robot 210, the substrate is supported on the lift pins 390 while the susceptor 310 is lowered, and the substrate is lifted while the susceptor 310 is elevated. It is placed on the susceptor 310, the lift pins 390 is made of a structure that is inserted into the pinhole formed in the susceptor 310.

In the upper space of the susceptor 310, an electrode type showerhead 320 used as an electrode connected to a high frequency power source (not shown), which is a plasma source that applies a high frequency current to form a plasma, is installed.

The showerhead 320 receives a mixed gas for forming a plasma for deposition of a thin film on a substrate according to a type of processing performed in the process chamber 300 through the gas supply unit 600. The mixed gas for plasma formation supplied from the gas supply unit 600 is converted into a plasma in the shower head 320, and a predetermined thin film is deposited on the large area substrate S, and then exhausted through the gas exhaust pipe 370.

The susceptor 310 is installed to be movable up and down in the process chamber 300a and is electrically grounded. The large area substrate S is seated on the susceptor 310. Inside the susceptor 310 is mounted a heater (not shown) for heating the large area substrate (S). The susceptor 310 is supported by the susceptor supports 350 at its bottom. The susceptor support 350 is wider than the susceptor 310, and the lifting shaft 360 is installed at both ends in the vertical direction.

The elevating shaft 360 is connected to another elevating shaft 360 of the process chamber 300a having an upper end penetrating through the shower head 320. That is, the lifting shaft 360 serves to transfer the lifting driving force of the lifting device 400 to each other. The lowermost lifting shaft 360 is connected to the lifting device 400. The elevating driving force of the elevating device 400 is simultaneously transferred to the respective process chambers 300a through the elevating shafts 360 to elevate the susceptor 310 installed in each of the process chambers 300a.

For reference, the gas supplied to the shower head 500 may be a mixed gas of source gas and reaction gas. The source gas is a gas containing a main component of a thin film to be formed on a substrate, and the reaction gas is a gas for forming a plasma. For example, when a silicon oxide film is deposited on a substrate, SiH ₄ may be used as a source gas and O ₂ may be used as a reaction gas. According to another example, in the case of depositing a silicon nitride film on a substrate, SiH ₄ may be used as the source gas, and NH ₃ and N ₂ may be used as the reaction gas. In another example, SiH ₄ may be used as a source gas for depositing an amorphous silicon film on a substrate, and H ₂ may be used as a reaction gas.

5 is a cross-sectional view showing the shower head 500, Figure 6 is a view showing the top structure of the upper plate, Figure 7 is an enlarged perspective view of the main portion of FIG.

5 to 7, the shower head 500 includes a top plate 520, a baffle plate 540, and a spray plate 560.

The baffle plate 540 is coupled to the lower portion of the upper plate 520 so that a predetermined space is formed between the upper plate 520, and a plurality of gas holes 542 are formed in the baffle plate 540. An injection plate 560 is provided below the baffle plate 540, and a plurality of injection holes 562 are formed in the injection plate 560. The gas supplied through the upper plate 520 passes through the injection holes 542 of the baffle plate 540 and then is injected into the large area substrate S through the injection holes 562 of the injection plate 560.

The upper plate 520 may be provided as a generally rectangular plate, and a high frequency power source (not shown) of a VHF (30 MHz to 300 MHz) band for generating plasma is connected to the upper plate 520. .

A plurality of gas channels are formed on the upper surface of the upper plate 520 so that the gas supplied to the upper plate 520 flows uniformly. The plurality of gas channels formed in the upper plate 520 are provided by the first to sixth lines L1 to L6. The first line L1 is positioned near the center of the upper surface, and the gas provided to the upper plate 520 through the inflow groove 522 is connected to the line in which the inflow groove 522 through which the gas flows is interposed. First branch to both sides at L1). The second line L2 branches in both directions vertically from both ends of the first line L1. The third line L3 branches in both directions perpendicularly from the end of each of the second lines. The fourth line L4 branches in both directions perpendicularly from both ends of each of the third lines L3. The fifth line L5 branches in both directions perpendicularly from both ends of each of the fourth lines L4. The sixth line L6 is vertically connected from both ends of each of the fifth lines L5. Gas injection holes 527 are formed through both ends of the sixth line L6.

A first channel 521 having a “T” shape is formed at the center of the upper surface of the upper plate 520 by the first line L1 and the second line L2, and the vertical portion of the first channel 521 is formed. An inlet groove 522 through which gas flows into the upper plate 520 is connected to the first line. Since the plurality of channels are formed in a quadrangular arrangement structure to be symmetrical with respect to the center of the upper plate 520, only a portion of the channels symmetrical will be described below.

At the end of one horizontal portion (second line) of the first channel 521 having a "T" shape, the "T" shape material provided by the third line L3 and the fourth line L4 is formed. Two channels 523 are connected and provided by the fifth line L5 and the sixth line L6 at the end of the horizontal portion (corresponding to the fourth line) of the second channel 523 having a “T” shape. The third channels 524 are vertically connected. Holes 527 are formed through both ends of the horizontal portion (corresponding to the sixth line) of the third channels to allow gas to pass therethrough. The first to third channels are formed to have a stepped portion, and the cover plate 528 is coupled to the stepped portions of the first to third channels. Accordingly, a space in which gas flows is formed between the bottom surface of the cover plate 528 and the bottom surface of the first to third channels.

Looking at the gas flow in the shower head 500 having the above-described structure, the gas (SiH4 and H2) introduced into the center of the upper plate 520 through the inlet groove 522 in the center of the upper plate 520 is the first After branching to the first through 64 through the third channel to 64, it is introduced into the first baffle space between the upper plate 520 and the baffle plate 540 through the 64 holes 527. Thereafter, the gas is secondarily branched through the gas holes 542 of the baffle plate 540 to be introduced into the second baffle space between the baffle plate 540 and the injection plate 560. Through the injection holes 562 is uniformly sprayed on the entire large area substrate (S).

Here, when the opening ratios of the upper plate 520, the baffle plate 540, and the injection plate 560 for uniform gas supply are compared, the opening ratio C2 of the gas holes 542 of the baffle plate 540 is the upper plate. It is preferable that the aperture ratio C1 of the holes 527 of the hole 527 is smaller than the aperture ratio C3 of the injection holes 562 of the injection plate (C2 <C1, C3). For reference, the pressure in the process region P3 and the pressure in the second baffle space P2 are substantially the same, and the pressure in the first baffle space P1 is equal to the pressure in the process region P3 and the second baffle space ( Higher than the pressure of P2) (P1> P2, P2 = P3)

In the shower head 500 of the present invention, a plurality of gas channels are formed on the upper surface of the upper plate 520 that receives the gas for the first time so that the gas supplied to the upper plate flows uniformly. Furthermore, the gas may be uniformly supplied to the second baffle space B2. This uniform gas supply (flow) allows the first and second baffle spaces B1 and 2 provided between the top plate 520 and the baffle plate 540 and between the baffle plate 540 and the injection plate 560. The height can be reduced to a minimum, and this can reduce the height of the process chamber as a whole by thinning the thickness of the showerhead 500, so that a special effect of stacking a plurality of process chambers in a process module can be expected.

8 is a view showing a modification of the upper plate.

Referring to FIG. 8, a plurality of gas channels are formed on the upper surface of the upper plate 520a so that the gas supplied to the upper plate 520a flows uniformly. The plurality of gas channels formed in the upper plate 520a are provided by the first to ninth lines L1 to L9. The first line L1 is positioned near the center of the upper surface, and the gas provided to the upper plate 520 through the inflow groove 522 is connected to the line in which the inflow groove 522 through which the gas flows is interposed. First branch to both sides at L1). The second line L2 is vertically connected from both ends of the first line L1. The third line L3 is vertically connected from the end of each of the second lines. The fourth line L4 branches in both directions perpendicularly from the end of each of the third lines L3. The fifth line L5 branches in both directions perpendicularly from both ends of each of the fourth lines L4. The sixth line L6 branches vertically from both ends of each of the fifth lines L5 in both directions. The seventh line L7 is vertically connected from both ends of each of the sixth lines L6. The eighth line L8 branches in both directions perpendicularly from the end of each of the seventh lines L7. The ninth line L9 branches in both directions perpendicularly from the end of each of the eighth lines L8. Gas injection holes 527 are formed through both ends of the ninth line L9.

In the center of the upper surface of the upper plate 520a, a first channel 521 having a “c” shape is formed by the first line L1 and the second line L2, and a vertical portion of the first channel 521 is formed. In the center, an inflow groove 522 through which gas flows into the upper plate 520 extends in the horizontal direction. Since the plurality of channels are formed in a quadrangular arrangement structure so as to be symmetrical about the first channel 521 having a “c” shape, only a portion of the channels symmetrical will be described below.

At the end of one horizontal portion (second line) of the first channel 521 having a "c" shape, the "T" shaped material provided by the third line L3 and the fourth line L4 is formed. The second channel 523 is connected, and the third channel 524 is a fifth line L5 at one end of the horizontal portion (corresponding to the fourth line) of the second channel 523 having a “T” shape. Are connected vertically. At both ends of the third channel 524, fourth channels 525a and 525b having a “c” shape provided by the sixth line L6 and the seventh line L7 are connected. At both ends of the fourth channels 525a and 525b, the “H” shaped fifth channels 526a, 526b, 526c and 526d provided by the eighth line l8 and the ninth line L9 are provided. Connected. Holes 527 are formed through both ends of the vertical portion (corresponding to the ninth line) of the fifth channels 526a, 526b, 526c, and 526d to allow gas to pass therethrough. The first to fifth channels are formed to have a stepped portion, and the cover plate 528 is coupled to the stepped portions of the first to fifth channels. Accordingly, a space in which gas flows is formed between the bottom surface of the cover plate 528 and the bottom surface of the first to fifth channels.

Looking at the gas flow in the shower head 500 having the above-described structure, the gas (SiH4 and H2) introduced into the upper plate 520a through the inlet groove 522 in the center of the upper plate (520a) is first to first After branching to the first 64 through 5 channels, it is introduced into the first baffle space between the upper plate 520a and the baffle plate 540 through the 64 holes 527. Thereafter, the gas is secondarily branched through the gas holes 542 of the baffle plate 540 to be introduced into the second baffle space between the baffle plate 540 and the injection plate 560. Through the injection holes 562 is uniformly sprayed on the entire large area substrate (S).

The present invention is a high frequency power supply in the VHF (Very high frequency; 30MHz ~ 300MHz) band and under high pressure conditions of more than 1 Torr and less than 10 Torr (higher internal pressure increases the number of collisions between electrons and neutral gas, so that high density plasma can be obtained). It is suitable for depositing micro crystalline silicon thin film (mc-si) on the large area (1100 * 1400mm) substrate surface on which amorphous silicon (a-Si) film is deposited, especially improving the film thickness uniformity throughout the substrate surface. The effect is very good. These high frequency voltage and high pressure conditions may be referred to as essential conditions for the deposition of microcrystalline silicon thin film.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

100: load lock chamber
200: conveying chamber
300: process module
300a: process chamber
310: susceptor
500: shower head

Claims (17)

A susceptor for supporting a substrate; And
A shower head disposed on the susceptor and serving as an electrode and supplying a process gas to the substrate,
The shower head,
An upper plate in which a plurality of gas channels are formed on the same plane to provide a flow path of the process gas, and gas injection holes are provided in the gas channels; And
An injection plate disposed below the upper plate and having injection holes for injecting the process gas supplied through the upper plate onto the substrate;
The top plate is
First channels having a “T” shape formed symmetrically with respect to a center of an upper surface connected to an inflow groove into which gas is introduced, and branched to both sides;
"T" shaped second channels connected vertically from both ends of the first channel and branched into two; And
A third channel having a “T” shape, which is vertically connected to both ends of the second channels and branched into two,
Thin film deposition apparatus characterized in that the gas flowing through the inlet groove is divided into 64 through the first to third channels. delete The method of claim 1,
The third channel is a thin film deposition apparatus, characterized in that the gas injection holes are formed through the end portion. The method of claim 1,
The first to third channels are formed to have a stepped portion, and further comprises a cover plate coupled to the stepped portions of the first to third channels to provide a space for gas flow therebetween. Device. A susceptor for supporting a substrate; And
A shower head disposed on the susceptor and serving as an electrode and supplying a process gas to the substrate,
The shower head,
An upper plate in which a plurality of gas channels are formed on the same plane to provide a flow path of the process gas, and gas injection holes are provided in the gas channels; And
An injection plate disposed below the upper plate and having injection holes for injecting the process gas supplied through the upper plate onto the substrate;
The top plate is
A first line positioned near the center of the upper surface and connected to an inflow groove into which gas is introduced;
Second lines branching in both directions perpendicularly from both ends of the first line;
Third lines branching in both directions perpendicularly from an end of each of the second lines;
Fourth lines branching in both directions perpendicularly from an end of each of the third lines;
Fifth lines vertically bidirectionally crossed from both ends of each of the fourth lines;
The thin film deposition apparatus of claim 5, wherein the thin film deposition apparatus includes sixth lines vertically bidirectionally formed from both ends of each of the fifth lines, and gas injection holes are formed at both ends thereof. A susceptor for supporting a substrate; And
A shower head disposed on the susceptor and serving as an electrode and supplying a process gas to the substrate,
The shower head,
An upper plate in which a plurality of gas channels are formed on the same plane to provide a flow path of the process gas, and gas injection holes are provided in the gas channels; And
An injection plate disposed below the upper plate and having injection holes for injecting the process gas supplied through the upper plate onto the substrate;
The top plate is
A first channel formed at an upper surface center and connected to an inflow groove through which gas is introduced;
"T" shaped second channels connected vertically from both ends of the first channel and branched into two;
Third channels branched into two from both ends of the second T-shaped channels;
"C" shaped fourth channels connected vertically to branch into two from both ends of said third channels; And
Including the "H" shaped fifth channels connected vertically so as to branch into four from both ends of the "c" shaped fourth channels,
Thin film deposition apparatus characterized in that the gas flowing through the inlet groove is divided into 64 through the first to fifth channels. A susceptor for supporting a substrate; And
A shower head disposed on the susceptor and serving as an electrode and supplying a process gas to the substrate,
The shower head,
An upper plate in which a plurality of gas channels are formed on the same plane to provide a flow path of the process gas, and gas injection holes are provided in the gas channels; And
An injection plate disposed below the upper plate and having injection holes for injecting the process gas supplied through the upper plate onto the substrate;
The shower head
A baffle plate disposed between the upper plate and the spray plate, the baffle plate having a plurality of holes formed to uniformly distribute the flow of the process gas,
And a first baffle space is provided between the baffle plate and the upper plate, and a second baffle space is provided between the baffle plate and the spray plate. The method of claim 7, wherein
And the gas channels, the gas injection holes of the upper plate, and the holes of the baffle plate are sequentially provided to increase the resistance of the fluid flow. The method of claim 7, wherein
And the aperture ratio of the holes of the baffle plate is smaller than the aperture ratio of the gas injection holes of the upper plate and the aperture ratio of the injection holes of the injection plate. The method according to any one of claims 1 and 3 to 9,
The upper plate is provided as a rectangular plate, the upper plate is a thin film deposition apparatus, characterized in that the high-frequency power of 30MHz ~ 300MHz band for generating plasma is applied. A high frequency power source for generating plasma is applied, and a plurality of symmetrical gas channels are formed on the same plane so as to branch-provide the process gas supplied from the outside, and at the end of the gas channels, An upper plate on which gas injection holes are formed;
A baffle plate installed to provide a first baffle space under the upper plate, the baffle plate having a plurality of holes for secondly supplying a process gas which is first branched from the upper plate and supplied;
A spray plate disposed below the baffle plate so as to provide a second baffle space and having injection holes for spraying the process gas; And
And a susceptor installed to be provided below the spray plate and supporting the substrate. A load lock chamber in which substrates are placed;
A transport chamber connected to the load lock chamber and having a transport robot for transporting substrates; And
A process module connected to the transfer chamber and having at least two process chambers in which a plasma treatment is performed on a substrate;
The process chamber
A susceptor for mounting a semiconductor substrate; And
Located at the top of the susceptor, the top plate, the baffle plate and the injection plate is disposed to be stacked on each other, between the first baffle space and the second baffle space provided between the shower head,
The upper plate is a thin film deposition apparatus, characterized in that the gas channels for providing a flow path of the process gas so that the process gas is uniformly supplied to the first baffle space provided between the baffle plate and the upper plate is formed on the same plane. The method of claim 12,
The top plate is
First channels having a “T” shape formed symmetrically with respect to a center of an upper surface connected to an inflow groove into which gas is introduced, and branched to both sides;
"T" shaped second channels connected vertically from both ends of the first channel and branched into two; And
A third channel having a “T” shape, which is vertically connected to both ends of the second channels and branched into two,
Thin film deposition apparatus characterized in that the gas flowing through the inlet groove is divided into 64 through the first to third channels. The method of claim 13,
And the gas channels, the gas injection holes of the upper plate, and the holes of the baffle plate are sequentially provided to increase the resistance of the fluid flow. The method of claim 13,
And the aperture ratio of the holes of the baffle plate is smaller than that of the gas injection holes of the upper plate and the aperture ratio of the injection holes of the injection plate. The method according to any one of claims 13 to 15,
And the process modules and the load lock chamber are disposed radially about the transfer chamber. The method according to any one of claims 13 to 15,
The process module
An elevating device having an elevating driver installed below the process chamber located at a lowermost end thereof; And a lifting shaft installed vertically at both ends of the susceptor of the process chamber and being lifted by the lifting device to lift the susceptor.
And the elevating shaft is connected to another elevating shaft of the process chamber whose upper end penetrates through the shower head to transfer the elevating driving force of the elevating device to each other.

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