TW201202464A - Thin film vapor deposition apparatus - Google Patents

Abstract

Provided is a thin film vapor deposition apparatus. The thin film vapor deposition apparatus includes a substrate support unit configured to support a substrate; and a shower head disposed above the substrate support unit to supply a process gas to the substrate. The shower head includes: an upper plate including a plurality of gas channels forming process gas flow paths and gas injection holes formed in the gas channels, high-frequency power being applied to the upper plate to excite the process gas into plasma; a baffle plate disposed under the upper plate and including a plurality of holes to uniformly distribute the process gas; and an injection plate disposed under the baffle plate to inject the process gas supplied through the baffle plate to a substrate.

Description

201202464 VI. Description of the Invention: [Technical Field] The present invention relates to a thin film vapor deposition apparatus, and more particularly, a passivation=plasma in a pure vaporization_rotor body chemical (5) mesh; redundant assembly [previous technology] 】 Solar cells use the properties of semiconductors to set the light energy. According to its type, the solar cell is divided into a single crystal stone, a sun, a solar cell, and a thin film solar cell (thin-fllms〇larc): a thin film solar cell is a transparent film of glass or plastic. Manufactured by i-film or eta film, the crystal-based solar cell is manufactured in ς ^ : mine-preventing county, and this can be (10) super-fine plasma is vapor-deposited on the substrate in the gas phase/child process. 】 Plating = Invention for providing a film evaporation which can improve the uniformity of the steamed film. The object of the invention is not limited thereto, and other objects not mentioned are clearly understood from the following description. ητ贝° is rooted in the mine. The film of the embodiment is steamed, and the nozzle is disposed in the processing chamber, the substrate is supported, and the shower head is disposed on the upper portion of the substrate supporting mechanism and the upper plate is processed by the gas. The shower head includes: The upper flat flow path is formed by a plurality of air passages formed to provide a plurality of holes in the lower portion of the processing gas plate to disperse the above process 4/22 201202464; and a spray plate disposed at a lower portion of the above-mentioned seesaw Supplyed by the upper plate The process gas is sprayed onto the substrate. According to an embodiment of the present invention, the air passage, the gas injection hole, and the flat hole may be sequentially increased in flow force. # according to the present invention, on the substrate The processing gas is supplied more uniformly, and the uniformity of the film which is plated on the substrate is improved. [Embodiment] Hereinafter, a film hot-dip coating according to a preferred embodiment of the present invention will be described in detail with reference to the drawings. The element labeling refers to the component symbol, and it is noted that the phase element is represented by the same component symbol as far as possible, even when it is not closed. In addition, when describing the present invention, it is determined that the related known structure or function is related. DETAILED DESCRIPTION OF THE INVENTION The present invention may be omitted. (Embodiment) FIG. 1 is a perspective view of a hair _ implementation and a PECVD apparatus, and a 2 and FIG. 3 are an embodiment of the present invention. For example, the PECVD device has a planar structure g and a side surface structure. Referring to Figures 1 to 3, the PECVD device is used for performing a PECVD process on a large-area substrate S for a solar cell. The arrangement includes: a cavity (load-lock chamber) 1〇〇, a transport chamber 2〇〇, and a plurality of processing modules 3〇〇. The second load lock chamber 100 is disposed in the PECVD device! The front-loading chamber is composed of a layered structure, in which two chambers are the loading chambers waiting for the large-area substrate S before the process, and the remaining two chambers can be used as processed after the process. The large-area substrate s waits for the unloading cavity. The loading chamber 110a and the unloading chamber 110b have the first inlet and outlet 112, respectively.

5/22 S 201202464 Brother 2 entrance and exit 114, providing a large-area stage 120 in the internal space. A preheating member 130 for preheating the large-area substrate is provided on the stage 120 of the loading chamber U〇a. The load a/plus in the unloading chamber 11〇b is placed on the processing chamber to process the large-area substrate s. Therefore, there is provided a cooling member 14 that reduces the temperature of the large-area substrate. The large-area substrate is carried out by the atmospheric pressure transport robot (not shown) in the transport chamber H〇a or the carrier chamber. The loading chamber 110a and the unloading chamber 110b constituting the lock chamber 1〇〇 are formed in the same (adjacent) as the transport chamber 2〇〇 during the loading robot No of the transport chamber 2 or the loading of the large-area substrate. The vacuum atmosphere is converted to an atmospheric pressure state when an untreated large-area substrate is to be taken from an atmospheric pressure transport robot or a large-area substrate that has been processed is carried out. That is, the loading/unloading chambers u〇a, _ of the load lock chamber 100 are maintained in a vacuum-like state and an atmospheric pressure state in order to prevent the pressure state of the transport chamber 200 from changing, in order to handle such pressure fluctuations as quickly as possible, Divided into a plurality of shock chamber 1 shirt and unloading chamber n〇b. Of course, the chambers of the load-locking chamber can be used for loading and unloading without being divided into loading and unloading. The transport chamber 2 is located at the center of the load lock chamber 100 and the processing module 3〇〇. The transport chamber 200 is connected to the processing chambers 3 of the load lock chamber 100 and the processing module 3, for example, and has a transport robot 2 for transporting a large-area substrate. The transport robot 210 can be composed of one or two arm structures. In the robot configuration, the i or two arm structures can carry out the large-area substrate placed on the stage i2 of the loading chamber (10) and carry it into the processing chamber Deng (9) of the processing module 3〇〇. Further, in addition to the configuration of the present embodiment, the transport robot 21 placed on the transport chamber 200 may be provided with a plurality of robots for the usual solar cell manufacturing process and the flat panel display manufacturing process. For example, an arm having a double-blade structure in which two large-area substrates s can be processed by one arm can be used.

6/22 S 201202464 Robot, or with a robot. More than one arm robot or a combination of these processing modules 300 is used to transport the chamber 2〇 (^ center connection is arranged on the side. In the present, the 4th delivery chamber is the three-phase processing module 3GG. In the case, there may be a processing module 300 as needed. 罝#至5々Processing ribs 300·The plasma chemical vapor deposition process of the 14 film on the rotor body riding plate. Used in the film vapor deposition wipes. The substrate may be, for example, a transparent substrate made of glass or plastic used in the production of a thin film solar cell, or a germanium substrate used in the manufacture of a crystalline solar cell, etc. The processing module 3 is very suitable. A lamination (a film deposition process of a structure of a germanium (a_Si) film and a microcrystamnesiliccm (mc_Si) film) is sequentially laminated on a transparent substrate of a thin film solar cell. The process module 300 is laminated. There is a structure for processing the processing chamber 300a for independently performing a plasma processing process on a large-area substrate. In the present embodiment, the processing module 300 is configured by stacking four processing chambers 300a, and is allowed at a height. In this case, four or more processing chambers may be stacked, and a lifting device 4A having a lifting and lowering driving unit 410 is provided below the lowermost processing chamber 3A, and the lifting device 400 is disposed in each of four processing units. The pedestal 310 in the cavity 300a is simultaneously raised and lowered. The lifting driving force of the lifting device 400 can be transmitted to the pedestal of each processing chamber 300a through the lifting shaft 360. The processing module 300 having such a structure can minimize the height of the device. The processing chambers 300a are arranged in a plurality of layers. Thus, the PECVD apparatus 1 of the present invention can arrange a plurality of (12 or more) processing chambers 31〇 on the same area, thereby improving the process and the growth.

7/22

S 201202464 Flexibility to maximize the productivity of each unit. In particular, the present invention is very suitable for a solar cell manufacturing process in which a stacked structure of an amorphous germanium film and a microcrystalline germanium film is continuously vapor-deposited, and the vapor deposition thickness of the microcrystalline germanium film is about 20,000 AngStrom (2 μm) and needs to be more than others. The long evaporation time of the film. The solar cell of the vertical layer structure has a structure in which an amorphous ruthenium film and a microcrystalline ruthenium film are laminated in order to efficiently absorb the solar spectrum from the infrared region to the ultraviolet region to improve power generation efficiency. 4a is a cross-sectional view of the processing chamber in a state where the susceptor is located below, and FIG. 4b is a cross-sectional view of the processing chamber in a state where the susceptor is located above. As shown in Figs. 4a and 4b, the processing chamber 3A provides a process processing region (reaction space) between the susceptor 31A and the showerhead 320. The process area of the processing chamber 3 is configured to be an open type that is not completely isolated from the (10) sub-body formation area of the other processing chambers stacked on the same processing module. A groove valve 3δ〇 for determining the communication between the transfer chamber 2〇〇 and the reaction space is provided on the side wall of the processing chamber 300a, and when the large-area substrate 8 is carried from the transport chamber 2 to the susceptor 310 (or unloaded) When the large area substrate is used, the groove valve 380 is opened. A lift pin 39 is provided in the processing chamber 3U), and the lift pin supports the large-area substrate S when the substrate is loaded or unloaded, and supports the substrate while the base 31 is lowered. That is, when the transport robot 21G is transported to the large-area substrate, the (four) lower substrate that is lowered by the susceptor is supported on the lift pin 390. When the susceptor 31G moves up and down, the substrate is placed on the upper portion of the susceptor, and the lift pin 390 is The pin hole formed in the base 31 is inserted. In the upper space of the susceptor 310, there is provided an electrode for use as an electrode, and the electrode is applied with a high-frequency current for the scaly ion body & 8/22

S 201202464 The source is a high frequency power supply (not shown). The etch head 320 receives the plasma-formed mixed gas of the substrate vapor-deposited film on the surface of the substrate by the gas supply means 6 根据 according to the surface of the processing step performed in the processing chamber 3A. The plasma-forming mixed gas supplied from the gas supply means is plasma-formed in the shower head 32, and is subjected to predetermined film vapor-forging on the large-area substrate S, and then discharged through the gas exhaust pipe 37. The susceptor 310 is disposed to be movable up and down within the processing chamber 3a and electrically grounded. The large-area substrate S is placed on the base 31〇. A heater (not shown) for heating the large-area wire 8 is attached to the inside of the base 31A. The bottom surface of the base 31 is supported by the base support frame 350. The base support frame 35 is longer than the base 310, and the lift shaft 36 is disposed at both ends in the vertical direction. The upper end of the elevating shaft 360 passes through the shower head 32A and is connected to the other elevating shaft 36' of the processing chamber 300a located at the upper portion. That is, the lifting shaft 36 has a function of transmitting the material driving force of the lifting device 4 (8) to each other. The lowermost lifting shaft 360 is connected to the lifting device 400. The lifting power of the lifting and lowering assembly i400 is transmitted to the respective processing chambers 3 (8) a through the lifting shaft 36G, so that the bases 310 provided in the respective processing chambers 300a are simultaneously raised and lowered. As a reference, the gas supplied to the shower head 5 may be a mixed gas of a material gas and a gas. The material gas is a gas containing a main component of a film to be formed on a substrate, and the reaction gas is a gas for forming a plasma. In the case where the wafer film is vapor-deposited on the substrate, SiH4 can be used as the material gas, and ruthenium 2 can be used as the reaction gas. According to another example, in the case of vaporizing a nitriding film on a substrate, SiH4 can be used as a material gas, and brain and N2 can be used as a reaction gas. According to other examples, 2 minerals on the substrate can be used as raw material gas. 201202464

As SiH4, H2 can be used as a reaction gas. Fig. 5 is a cross-sectional view showing the shower head 5A, Fig. 6 is a view showing a structure of an upper surface of the upper flat plate, and Fig. 7 is a perspective view showing an enlarged main portion of Fig. 5. Referring to Figures 5 through 7, the showerhead 500 includes an upper plate 520, a broadcast plate 540, and a spray plate 560. A baffle 54 is joined to the lower portion of the upper plate 520 so as to form a space between the upper plate 520 and the upper plate 520, and a plurality of air holes 542 are formed in the baffle 54. A spray plate 560 is provided at a lower portion of the support plate 540, and a plurality of spray holes 562 are formed in the spray plate 56''. The gas supplied through the upper flat plate 52A passes through the injection holes 542 of the baffle 540, and then ejected toward the large-area substrate s through the injection holes 562 of the ejecting plate 56''. The upper plate 520 may be formed as a substantially quadrangular plate, and a high-frequency power source (not shown) for generating a plasma Vffi7 (Veryhiah freq cy · 30 MHz to 300 MHz) band is connected to the upper plate 520.

A plurality of air passages are formed on the upper surface of the upper plate 520 so that the gas supplied to the upper plate 520 flows uniformly. The plurality of air passages formed on the upper flat plate 52A are formed by the second to sixth lines L1 to L6. The second line U is located near the center of the upper surface, and is a line connecting the inflow groove 522 of the inflowing gas to the middle, and is supplied by the inflow groove 522 by $丨| l τ 1 ^ 1 '. The gas of the crucible plate 520 branches first on both sides of the line 1 of the first line L1. The second slit green road L2 branches vertically from both ends of the first line L1 in two directions. The third section says that the middle and deep roads L3 branch from the east line of each second line in two directions. At the end of the fourth line, *mountain + 士± 八丄 11^4攸, the two lines of the third line L3 branch vertically in two directions. The fifth line a L5 攸 each brother 4 line L4 66 does not vertically branch in both directions. The sixth line... 》 'School, earth, i Ling L6 攸 each of the two lines of the brothers 5 line hit straight connection. At the end of the second line L6, the tantalum-tungsten-beton is formed into a gas injection hole 10/22 201202464 527. On the upper side of the upper plate 520, the line U forms a "T-shape,": =, and a second vertical portion (corresponding to the first line = 52\' in the inflow groove 522 of the first channel 521 body. In many cases, the 52G inflowing gas is symmetrical with respect to each other. Therefore, only a part of the channels of the first pair of channels will be described below. A certain level of the first channel 521 in the shape of a T" (second line + ) The end of the connection is formed by the third line u and the fourth line W, the sub-shaped second channel 523, in the "τ,, this 9, s # ^ 仕ί子 shape of the brother 2 channel 523 of the water ^ (phase ^ The end of the fourth line is perpendicularly connected to the third channel formed by the fifth line ^ and the =6 secret L6. The two ends of the third channel are formed at the ends of the third channel for passage. The pores of the gas are π. The first to Lth channels are formed to have a step portion, and the step portion 528 is joined to the step portions of the third to third passages. Therefore, the lower surface of the cover plate 528 and the bottom surface of the third to third passages A space in which a gas flows is formed. If the gas flowing in the shower head 5 of the above structure is observed, the inflow through the center of the upper plate 520 The gas (SiH4 and H2) flowing into the center of the upper flat plate 52A is branched into 64 times by the first to third passages, and then flows into the first between the upper flat plate 520 and the support plate through the 64 holes 527. The gas is blocked by the air hole 542 of the baffle 54 而 and flows into the second resisting space between the baffle 540 and the ejecting plate 560, and finally passes through the ejecting hole 562 of the ejecting plate 560 to a large area. The substrate S is uniformly sprayed uniformly. Here, if the aperture ratios of the upper plate 520, the baffle 540, and the ejection plate 560 for uniform gas supply are compared, the air holes 542 of the baffle 540 are preferable.

The aperture ratio C2 of 11/22 S 201202464 is smaller than the aperture ratio C1 of the aperture 527 of the upper flat plate and the aperture ratio C3 (C2 < C1, C3) of the ejection hole 562 of the ejection plate. As a reference, the pressure in the step processing region P3 and the pressure in the second blocking space P2 are almost the same, and the pressure in the first blocking space P1 is higher than the pressure in the step processing region p3 and the pressure in the second blocking space P2 (P1 > P2, P2) =P3). The shower head 500 of the present invention forms a plurality of air passages on the upper surface of the upper flat plate 52 that receives the gas first, so that the gas supplied to the upper flat plate flows uniformly, so that the first blocking space and the second blocking space can be moved to the first blocking space. B2 supplies the gas evenly. Since the gas (flow) of such a uniform sentence can be performed, it is possible to minimize the formation of the upper plate = and the baffle 540 and between the baffle 54 and the spray plate 56: 2: the space m, The height of B2 is such that the sprinkler head and the degree of rotation can be thinned to reduce the overall processing height (4), and (4) the special effect of stacking a plurality of processing chambers in the center. Fig. 8A is a view showing a modification of the upper flat plate. Referring to Fig. 8, the upper surface of the upper flat plate 52A is provided so that the gas supplied to the upper flat plate 52Qa is in the center of the upper surface from the first to the first in the upper first line L1. /=. The groove 522 is connected to the inflow port of the gas inlet of the middle door 520 221. The milk which is supplied to the upper flat τ through the inflow groove 522 is branched first on both sides of the first line L1. The second "Ten L2 is connected vertically from both ends of the first line L1, and the end of the spring line is connected vertically. t, ', and the return path B are from the respective 2nd 2nd connecting line L4 from the 3rd line to the two Directional branch. End of 5th • Branch vertically in both directions. “Small from each 5th=4 _ in both directions. 7_L7 from each of the 6th line; ^ 垂 two straight ends straight! 2/22

S 201202464 The sth line Ls branches from each of the 7th lines, the 9th green line, and the other ends. The ends of the two terabytes L 8 of the ninth line L 9 are vertically branched in two directions. A gas injection hole 527 is formed through the ]:=T portion. The vertical part of the line-two board = (equivalent to the u, 52i, in the first channel) 521 is extended to the upper plate 汹 in the horizontal direction: two: the part of the light channel is explained. 1 one of the leveling parts of the transport 521 (the second shape: the third = 3: the quasi-portion (equivalent to the fourth line) t ^ 2 the water L5 of the channel 523, that is, the third channel 汹. In the ^ some rain:, the end is vertically connected The fifth line = the 6th 525h 接. The 驭扪匚 形状 形状 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 H H H H H H H The fifth channel 5, the 526b, the second 32, the 5th, the 526, the vertical portion of the word shape, and the spring path are formed at both ends to form a hole 527 for passing gas. It is formed to have a step portion, and j in the first to fifth passages is 528. Therefore, a space in which a gas flows is formed between the lower surface of the cover plate 528 and the bottom surface of the i-th to the second. If the gas flow in the shower head 50A having the above structure is observed, the inflow grooves 522 passing through the center of the two flat plates are poured into the S1H4 and H2 of the upper plate 52A) through the first branch of the first to fifth passages. After being 64-solid, it flows into the upper plate 520a and the baffle 540 13/22 through the 64 holes 527.

The first blocked space between S 201202464. Then, the gas is branched twice by the air holes 542 of the blocking plate 54 and flows into the second blocking space between the baffle 540 and the ejection plate 560, and finally passes through the ejection holes 562 of the ejection plate 560 to the large-area substrate S. Spray evenly. The present invention is suitable for high-frequency power sources in the VHF30MHZ~300MHz band and high-voltage conditions above ITorr and above 10 Torr (the higher the internal pressure, the higher the number of collisions of electrons and neutral gases, the higher the density of plasma can be obtained). The large-area (1100*1400 mm) substrate surface of the amorphous tantalum film is hot-plated with a microcrystalline germanium film, and the effect of improving the uniformity of the film thickness on the entire surface of the substrate is remarkable. This high-frequency voltage and high-pressure conditions can be used for the necessary conditions of microcrystalline stone film distillation. The above description is only illustrative of the technical idea of the present invention, and various modifications and changes can be made without departing from the spirit and scope of the invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but the scope of the technical idea of the present invention is not limited by the embodiments. The scope of the present invention should be construed in accordance with the following claims, and all technical ideas within the scope of the invention should be construed as being included in the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS The following drawings are for illustrative purposes only and are not intended to limit the scope of the invention. Fig. 1 is a perspective view showing a PECVD apparatus for a large-area substrate according to an embodiment of the present invention. Fig. 2 is a plan view showing the structure of a large-area substrate device according to the embodiment of the present invention. Figure 3 is a PECVD apparatus for a large-area substrate of the present invention.

S 201202464 side section structure diagram. Fig. 4a is a cross-sectional view of the processing chamber in a state in which the susceptor is located below. Fig. 4b is a cross-sectional view of the processing chamber in a state where the susceptor is located above. Figure 5 is a cross-sectional view of the shower head. Fig. 6 is a view showing the structure of the upper surface of the upper flat plate. Fig. 7 is a perspective view showing an enlarged main portion of Fig. 5. Fig. 8 is a view showing a modification of the upper flat plate. [Description of main components] 1 PECVD apparatus 100 Loading chamber 110a Loading chamber 110b Unloading chamber 112 First inlet and outlet 114 Second inlet and outlet 120 Stage 130 Preheating unit 140 Cooling unit 200 Shipping chamber 210 Transportation robot 300 Processing module 300a Processing chamber 310 Base 320 Sprinkler 350 Base support bracket 360 Lifting shaft 370 Gas exhaust pipe 201202464 380 Groove valve 390 Lifting pin 400 Lifting device 500 Sprinkler head 520 Upper plate 520a Upper plate 521 1st channel 522 Gas inflow groove 523 2nd channel 524 3rd channel 525a, 525b 4th channel 526a, 526b, 526c, 526d 527th L 528 Step part joint cover 540 Baffle 542 Air hole 560 Spray plate 562 Injection hole 600 Gas supply mechanism B1 1st block Space B2 2nd blocking space LI 1st line L2 2nd line L3 3rd line L4 4th line L5 5th line 5 channel 16/22 s 201202464 L6 6th line L7 7th line L8 8th line L9 9th line PI Pressure P2 of the first blocking space Pressure P3 of the second blocking space Pressure S of the processing area of the substrate Substrate 17/22

Claims (1)

201202464 VII. Patent application scope·· L A thin tantalum vapor deposition device, comprising: a base for supporting a substrate; and a substrate having a function of an electrode disposed on an upper portion of the base The gas, the above-mentioned sprinkler head comprises: ί:: 败 ing it to form a plurality of air passages on the same plane to provide the above-mentioned treatment, the gas jet hole is formed in the above-mentioned air jet; and the upper flat patch = placed in the lower portion of the upper flat plate described above Spraying the above-mentioned processing gas given by the above-mentioned orifice plate onto the above-mentioned substrate 2. 3. Patenting (4) 1 of the _ steaming difficulty, wherein the upper flat upper = 帛 1 (four) 'pure money The inflow groove is connected to "Ding,,:\, the heart is formed to be symmetrical with each other, and branches to both sides; and the "Second channel of the straight shape" is vertically connected from the both ends of the first channel and branches into 2; the third channel of the T sub-shape, the complex /> tA end is vertically connected and branched;; the gas of the two sides of the second channel is passed through the first to third channel branches Two film steaming towns In the device, the third pass C is formed at the end portion to form a right side as in the case of the patented dirty item 2: body spray hole. The third passage is formed to have a step device, wherein the upper passage 3 includes a cover plate that is combined with the space in which the gas flows through the upper portion. 18/22 S 4. 201202464 5. The film vapor deposition apparatus of item 1, wherein the upper flat ϋϊ is located near the center of the upper surface, and the inflow groove of the flowing human gas is connected to the second line 'from the above-mentioned first line (4) Vertically dividing the two lines in two directions 'the system' is perpendicularly directed from the end of the second line to the two directions = the line 'the line is perpendicularly directed from the end of the third line to the two directions, Both ends of the fourth line are vertically branched in two directions. The two ends of the fifth line are vertically branched in two directions, and gas injection holes are formed in the both end portions. ^包ί专·, 1 item of thin film steaming device, wherein the above upper Pingdi 'Ding 1, pass the 'machine in the center of the upper surface and connect the gas red inflow groove; direct connection / and the road 'from the first pass The ends of the second channel of the paste-side end are in the shape of ='', and the two ends of the second channel are connected [the fourth channel of the word shape, and the straight connection from the third channel is branched into two; and the last * and the word "Η" The fifth passage of the shape, from the above "[,, the two sides of the word shape are vertically connected to each other into four branches; 4 through the gas of the above-mentioned flow m through the loading 丨 to the first passage of the first passage 19/22 S 201202464 is 64. 7.== 蒸 第 第 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 蒸 : : : : : : : : : 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜 薄膜The hole of the baffle is formed as a fluid 9. The thin film steaming device of the seventh item, wherein the rate of the baffle is smaller than the opening ratio of the gas ejecting hole of the upper plate and the ejecting hole of the upper reversal plate The opening ratio of the 薄膜θ·==利^围2 item 2, wherein the upper flat plate is on the upper plate The upper plate applies a high-frequency power source for the 30 MHz to 3 〇〇 MHz band of the living body. A enamel film hot-plating device is characterized in that it includes an upper plate, and an air passage for generating plasma is formed on the same plane. , using a symmetrical text processing gas, in the second of the air passages = externally connected gas injection holes; 7 plucked to form a gas jet = plate, arranged in the upper plate of the upper plate for the second branch of the body The processing gas supplied by the plurality of r-branch is supplied::: upper: = the second blocking space is provided below the support plate, and the injection hole for injecting the processing gas is formed; 8 and 20/22 S 201202464 pedestal, setting The substrate is disposed below the spray plate to support the substrate. 12. A thin film evaporation device, comprising: a lock chamber to place a substrate; an S chamber and the load lock chamber, and a transporter for transporting the substrate a cavity connection, a processing chamber for plasma processing the substrate, and at least two or more stacked in the vertical direction; the processing chamber includes: a pedestal, a semiconductor substrate; and The head is located at the upper end of the pedestal, and the upper flat plate is disposed to be stacked on each other to provide a first blocking space therebetween. The two portions are::: The flow path for providing the processing gas is formed on the plane. The processing gas is supplied to the upper plate and the first blocking space. The top plate between the 卩 板 · · 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 平板 平板 平板 平板 平板 平板 平板 平板 平板The groove is connected, and - becomes symmetrical to each other, branches to the sides, · the second channel of the shape of the ,, ~... The fork and the knife are connected straight and branch to 2, and the ends of the two sides of the channel are cognately shaped. 3 channels, you connect directly and branch to 2; the two sides of the two sides of the narration 2 pass down to 64 " ^ into the gas through the above first to third channel branches 14 · as claimed in the 13th The film is steamed and woven, and the air passage of the upper air plate of the above air passage and the hole of the upper plate and the hole of the upper plate are sequentially increased in resistance to fluid flow. 15. The film vapor deposition apparatus of claim 13, wherein the opening D ratio of the hole of the support plate is smaller than an opening ratio of the gas ejection hole of the upper flat plate and an opening ratio of the ejection hole of the ejection plate. The apparatus for processing a substrate for a substrate, wherein the processing module and the carrier chamber are disposed at a center of the transport chamber, 17 in a thin film vapor deposition apparatus according to claim 13 The plasma processing apparatus for a substrate is characterized in that, in the thin film evaporation apparatus of claim 13, the processing module comprises: a lifting 4 under the processing chamber, and is disposed at the lowermost end. The lowering drive unit; and the base (four) end of the processing chamber are disposed in a vertical direction, and the base is raised and lowered by the lifting device, and the upper end penetrates the shower head and is connected to the upper portion of the processing: the lifting shaft 'There is the transfer of the above-mentioned device to the 22/22 S