CN115418624B - Uniform air suction structure, vacuum chamber, film preparation device and method - Google Patents
Uniform air suction structure, vacuum chamber, film preparation device and method Download PDFInfo
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- CN115418624B CN115418624B CN202210933966.5A CN202210933966A CN115418624B CN 115418624 B CN115418624 B CN 115418624B CN 202210933966 A CN202210933966 A CN 202210933966A CN 115418624 B CN115418624 B CN 115418624B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- General Chemical & Material Sciences (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention provides a uniform air suction structure, a vacuum chamber, a film preparation device, a film preparation method, a wafer and an electronic device. The uniform air extraction structure comprises a wafer supporting seat and an air extraction baffle. The wafer supporting seat is arranged in the vacuum chamber, and the lower edge of the wafer supporting seat is provided with a bending structure which is turned upwards. The air extraction baffle is arranged at the air extraction opening of the vacuum chamber, and the transverse dimension of the air extraction baffle is the average value of the outer transverse dimension and the inner transverse dimension of the bending structure. The air extraction baffle extends into the bending structure to divide the bending structure into two sections of bent air extraction channels. And the gas in the vacuum chamber sequentially passes through the two bent air extraction channels to be discharged out of the vacuum chamber.
Description
Technical Field
The present invention relates to the field of semiconductor device manufacturing, and more particularly, to a uniform pumping structure, a vacuum chamber, a thin film manufacturing apparatus, a thin film manufacturing method, a wafer, and an electronic device.
Background
Thin film deposition is an important link in chip fabrication, and the deposition quality directly affects the quality of the subsequent process and the final chip. During thin film deposition, uniformity of air intake and extraction is very important. If the air intake and suction are not uniform, the thickness of the film on the wafer may be varied, which may result in degradation of the film quality.
In order to improve the air suction uniformity of a vacuum chamber in a film preparation device, the prior art proposes an improvement scheme, and an air suction efficiency and air suction uniformity are improved by integrating an air suction spray pore plate and an air suction air outlet ring so as to reduce the centering error of air suction and air suction components caused by assembly reasons. However, the improvement scheme still cannot completely eliminate the problem of non-uniform air extraction caused by the non-centering assembly of the heating disc and the air extraction ring, and uncontrollable assembly errors are brought after the heating disc or the spray orifice plate is assembled and disassembled each time, so that the repeatability of the process machine is poor each time, and the process is difficult to be equivalently duplicated.
In order to overcome the above-mentioned drawbacks of the prior art, there is a need in the art for a uniform air extraction technique for improving the air extraction uniformity of a vacuum chamber in a thin film manufacturing apparatus and overcoming the problem of assembly errors, thereby improving the quality of the manufactured chips.
Disclosure of Invention
The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.
In order to overcome the defects in the prior art, the invention provides a uniform air extraction structure, a vacuum chamber, a film preparation device, a film preparation method, a wafer and an electronic device, and the problem of assembly errors can be solved by improving the simple air outlet structure, so that the air extraction uniformity of the vacuum chamber in the film preparation device is further improved, and the quality of prepared chips is improved.
Specifically, the uniform pumping structure provided in accordance with the first aspect of the present invention includes a wafer support and a pumping baffle. The wafer supporting seat is arranged in the vacuum chamber, and the lower edge of the wafer supporting seat is provided with a bending structure which is turned upwards. The air extraction baffle is arranged at the air extraction opening of the vacuum chamber, and the transverse dimension of the air extraction baffle is the average value of the outer transverse dimension and the inner transverse dimension of the bending structure. The air extraction baffle extends into the bending structure to divide the bending structure into two sections of bent air extraction channels. And the gas in the vacuum chamber sequentially passes through the two bent air extraction channels to be discharged out of the vacuum chamber.
Further, in some embodiments of the present invention, the wafer support pedestal comprises a hotplate and a wafer retaining ring. The wafer positioning ring is arranged on the periphery of the heating plate, and an upward-turned annular bending structure is arranged at the lower edge of the wafer positioning ring. The air extraction baffle is an annular air extraction baffle, and the diameter of the air extraction baffle is the average value of the outer diameter and the inner diameter of the annular bending structure.
Further, in some embodiments of the present invention, the wafer positioning ring is made of a ceramic material.
Further, in some embodiments of the present invention, the upturned bent structure is a U-shaped structure including a vertical inner wall, a vertical outer wall, and a flat or curved bottom surface. The air extraction baffle vertically extends downwards into the bending structure to divide the bending structure into air extraction channels with the sum of two sections of widths being conserved.
Further, in some embodiments of the present invention, the pumping baffle is fixedly installed or integrated on the inner wall of the vacuum chamber, and is kept centered with the gas shower above the wafer support.
In addition, the vacuum chamber provided in the second aspect of the invention comprises a spray header, a wafer supporting seat, an air extraction opening and an air extraction baffle. The spray header is arranged at the upper part of the vacuum chamber and is used for uniformly inputting reaction gas. The wafer supporting seat is arranged in the vacuum chamber and below the spray header, and the edge of the lower part of the wafer supporting seat is provided with a bending structure which turns upwards. The air extraction opening is arranged below the wafer supporting seat. The air extraction baffle is arranged at the air extraction opening, and the transverse dimension of the air extraction baffle is the average value of the outer transverse dimension and the inner transverse dimension of the bending structure. The air extraction baffle extends into the bending structure to divide the bending structure into two sections of bent air extraction channels. And the gas in the vacuum chamber sequentially passes through the two bent air extraction channels so as to be discharged out of the vacuum chamber through the air extraction openings.
Further, the thin film formation apparatus according to the third aspect of the present invention includes the above-described uniform pumping structure according to the first aspect of the present invention.
Further, the above film production method according to the fourth aspect of the present invention comprises the steps of: placing a wafer to be prepared into a wafer support seat of the uniform air suction structure provided by the first aspect of the invention; and inputting reaction gas into the vacuum chamber through the spray header, and discharging waste gas out of the vacuum chamber through two bent air extraction channels of the uniform air extraction structure.
Further, according to the wafer provided in the fifth aspect of the present invention, the film prepared by the film preparation method provided in the fourth aspect of the present invention is attached to the surface thereof.
Further, the electronic device provided according to the sixth aspect of the present invention includes the wafer provided according to the fifth aspect of the present invention.
Drawings
The above features and advantages of the present invention will be better understood after reading the detailed description of embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily to scale and components having similar related features or characteristics may have the same or similar reference numerals.
FIG. 1A illustrates a schematic side cross-sectional view of a uniform bleed structure provided in accordance with some embodiments of the present invention.
FIG. 1B illustrates a schematic top cross-sectional view of a uniform pumping structure provided in accordance with some embodiments of the invention.
Fig. 2 illustrates a schematic diagram of a vacuum chamber provided in accordance with some embodiments of the invention.
Fig. 3 illustrates a schematic structure of a wafer positioning ring provided according to some embodiments of the present invention.
Fig. 4 illustrates a flow diagram of a thin film fabrication method provided in accordance with some embodiments of the present invention.
Detailed Description
Further advantages and effects of the present invention will become apparent to those skilled in the art from the disclosure of the present specification, by describing the embodiments of the present invention with specific examples. While the description of the invention will be presented in connection with a preferred embodiment, it is not intended to limit the inventive features to that embodiment. Rather, the purpose of the invention described in connection with the embodiments is to cover other alternatives or modifications, which may be extended by the claims based on the invention. The following description contains many specific details for the purpose of providing a thorough understanding of the present invention. The invention may be practiced without these specific details. Furthermore, some specific details are omitted from the description in order to avoid obscuring the invention.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" as used in the following description should be understood as referring to the orientation depicted in this paragraph and the associated drawings. This relative terminology is for convenience only and is not intended to be limiting of the invention as it is described in terms of the apparatus being manufactured or operated in a particular orientation.
It will be understood that, although the terms "first," "second," "third," etc. may be used herein to describe various elements, regions, layers and/or sections, these elements, regions, layers and/or sections should not be limited by these terms and these terms are merely used to distinguish between different elements, regions, layers and/or sections. Accordingly, a first component, region, layer, and/or section discussed below could be termed a second component, region, layer, and/or section without departing from some embodiments of the present invention.
As described above, although the existing improvement is to reduce the centering error of the air intake and air exhaust parts due to the assembly reason by integrating the air intake shower orifice plate and the air exhaust air outlet ring, thereby improving the air exhaust efficiency and the air exhaust uniformity. However, the improvement scheme still cannot completely eliminate the problem of non-uniform air extraction caused by the non-centering assembly of the heating disc and the air extraction ring, and uncontrollable assembly errors are brought after the heating disc or the spray orifice plate is assembled and disassembled each time, so that the repeatability of the process machine is poor each time, and the process is difficult to be equivalently duplicated.
In order to overcome the defects in the prior art, the invention provides a uniform air extraction structure, a vacuum chamber, a film preparation device, a film preparation method, a wafer and an electronic device, and the problem of assembly errors can be solved by improving the simple air outlet structure, so that the air extraction uniformity of the vacuum chamber in the film preparation device is further improved, and the quality of prepared chips is improved.
In some non-limiting embodiments, the above thin film preparation method provided in the fourth aspect of the present invention may be implemented via the above thin film preparation apparatus provided in the third aspect of the present invention. The thin film forming apparatus is provided with the vacuum chamber provided in the second aspect of the present invention. The vacuum chamber is further provided with the uniform pumping structure provided by the first aspect of the invention.
Please refer to fig. 1A and fig. 1B in combination. FIG. 1A illustrates a schematic side cross-sectional view of a uniform bleed structure provided in accordance with some embodiments of the present invention. FIG. 1B illustrates a schematic top cross-sectional view of a uniform pumping structure provided in accordance with some embodiments of the invention.
As shown in fig. 1A and 1B, in some embodiments of the invention, the uniform pumping structure may include a wafer support 11 and a pumping baffle 12. The wafer support 11 is mounted inside the vacuum chamber for carrying a wafer, and has a bent structure 111 turned up at its lower edge. The air extraction baffle 12 is arranged at the air extraction opening of the vacuum chamber and has a transverse dimension d 0 Is the lateral dimension d of the outside of the folded structure 111 1 And an inboard lateral dimension d 2 Mean of (a), i.eThe suction baffle 12 extends into the bending structure 111 to divide the bending structure 111 into two sections of bending suction channels 112, 113. During the process of exhausting from the vacuum chamber, the gas in the vacuum chamber sequentially passes through the exhaust channel 112 and the exhaust channel 113, and then is exhausted from the vacuum chamber through the exhaust port.
By providing the above-described bending structure 111 and dividing the bending structure 111 into two bent sections of pumping channels 112, 113 using pumping baffles 12, the actual pumping path width w of the vacuum chamber will depend on the smaller of pumping channel 112 and pumping channel 113. Therefore, even if the wafer support base 111 is not aligned with the inner wall of the vacuum chamber and the air extraction opening, the air extraction speed of the wafer in all directions (depending on the actual air extraction path width d) is not affected, so that the problem of assembly errors can be overcome by improving the simple air outlet structure, and the air extraction uniformity of the vacuum chamber in the film preparation device is further improved, so that the quality of prepared chips is improved.
Please further refer to fig. 2 and 3. Fig. 2 illustrates a schematic diagram of a vacuum chamber provided in accordance with some embodiments of the invention. Fig. 3 illustrates a schematic structure of a wafer positioning ring provided according to some embodiments of the present invention.
As shown in fig. 2, in some embodiments of the present invention, a showerhead 21, a wafer support pedestal 22, a pumping port 23, and a pumping baffle 24 may be included in the vacuum chamber. The showerhead 21 is provided at an upper portion of the vacuum chamber for uniformly inputting the reaction gas. The wafer support base 22 is installed inside the vacuum chamber and below the shower head 21, and a bending structure turned up is provided at the lower edge thereof. The exhaust port 23 is disposed below the wafer support base 22, and is used for exhausting reaction tail gas from the vacuum chamber. The air extraction baffle 24 is arranged at the position of the air extraction opening 23 and has a transverse dimension d 0 Is the lateral dimension d of the outer side of the bending structure 1 And an inboard lateral dimension d 2 Is a mean value of (c). In some embodiments, the pumping baffle 24 may be fixedly mounted to the inner wall of the vacuum chamber, preferably via an intra-chamber liner, or integrally formed with the inner wall of the vacuum chamber, to ensure that it remains centered with the gas shower 21 above the wafer support pedestal 22.
Further, in some embodiments, the wafer support pedestal 22 includes a heater plate 221 and a wafer retaining ring 222. The heating plate 221 is disposed below the wafer to provide heat to the wafer to promote film growth on the wafer surface. The wafer positioning ring 222 is mounted on the periphery of the heating plate 221 for holding, positioning and/or supporting a wafer, and has a lower edge provided with an annular bending structure 223 turned upward. In some embodiments, the wafer positioning ring 222 may preferably be made of a ceramic material to prevent the wafer positioning ring 222 from being damaged by heat, deformed by heat, or ignited.
Correspondingly, the pumping baffle 23 may preferably be an annular pumping baffle with a diameter d 0 The outer diameter d of the annular bending structure 223, which may be a wafer positioning ring 222 1 And an inner diameter d 2 Is a mean value of (c). The pumping baffle 24 extends into the bending structure 223 to divide the bending structure 223 into two bending pumping channels 112, 113. During the process of exhausting from the vacuum chamber, the gas in the vacuum chamber sequentially passes through the exhaust channel 112 and the exhaust channel 113, and then is exhausted from the vacuum chamber through the exhaust port.
Further, as shown in fig. 1A, 1B and 3, in some embodiments, the upturned bend structure 223 may preferably be a U-shaped structure including a vertical inner wall 31, a vertical outer wall 32, and a flat or curved bottom surface 33. Correspondingly, the pumping baffle 24 may extend vertically downward into the bending structure 223 to divide the bending structure 223 into pumping channels 112, 113 with the sum of two widths being conserved, i.eWherein w is 112 To the width of the pumping channel 112, w 113 Let t be the thickness of the pumping baffle 24, which is the width of the pumping channel 113.
In this manner, during film preparation, the heater plate 221 is raised with the wafer positioning ring 222 so that the pumping baffle 23 is inserted into the U-shaped bend structure 223. At this time, if the width w of the air extraction channel 112 112 The heating plate 221 and the pumping baffle 24 are not aligned to be larger than a standard value (i.e) Width w of suction channel 113 on the same side thereof 113 Will decrease equally. Conversely, if the width w of the pumping channel 112 112 Due to the heating plate 221 and the air-extracting baffle 24Misalignment of less than standard (i.e) Width w of suction channel 113 on the same side thereof 113 Will increase equally. Since the width of the pumping channel in each direction of the wafer positioning ring 222 is smaller in the two sections of pumping channels 112 and 113, even if the wafer positioning ring 222 is not aligned with the inner wall of the vacuum chamber and the pumping port 24, the pumping speed in each direction of the wafer (depending on the actual pumping path width w) is not affected, so that the problem of assembly errors can be overcome by improving the simple air outlet structure. Therefore, by arranging the bending structure 111 and dividing the bending structure 111 into two sections of bending air extraction channels 112 and 113 by adopting the air extraction baffle 12, the invention can further improve the air extraction uniformity of the vacuum chamber in the film preparation device so as to improve the quality of the prepared chips.
In addition, according to another aspect of the present invention, there is provided a film preparation method. Referring to fig. 2 and fig. 4 in combination, fig. 4 is a schematic flow chart illustrating a thin film preparation method according to some embodiments of the invention.
As shown in fig. 2 and 4, in the process of preparing a thin film, a technician may first place a wafer to be prepared into the wafer support 22 of the uniform pumping structure. After that, the technician can start the thin film preparation apparatus, input reaction gas into the vacuum chamber through the shower head 21, and discharge the exhaust gas out of the vacuum chamber through the exhaust openings 23 through the two bent exhaust passages 112, 113 of the uniform exhaust structure, thereby preparing a thin film with uniform thickness on the wafer surface. Here, the wafer having a thin film with a uniform thickness prepared by the thin film preparation method according to the fourth aspect of the present invention is the wafer according to the fifth aspect of the present invention, and the thin film prepared by the thin film preparation method according to the fourth aspect of the present invention is attached to the surface of the wafer. Further, the electronic device such as a chip, a processor, a controller, a microcontroller, a microprocessor and the like, which is formed by one or more of the wafers, is the electronic device provided in the sixth aspect of the present invention, and includes one or more of the wafers provided in the fifth aspect of the present invention.
While, for purposes of simplicity of explanation, the methodologies are shown and described as a series of acts, it is to be understood and appreciated that the methodologies are not limited by the order of acts, as some acts may, in accordance with one or more embodiments, occur in different orders and/or concurrently with other acts from that shown and described herein or not shown and described herein, as would be understood and appreciated by those skilled in the art.
The various illustrative logical modules, and circuits described in connection with the embodiments disclosed herein may be implemented or performed with a general purpose processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any combination thereof designed to perform the functions described herein. A general purpose processor may be a microprocessor, but in the alternative, the processor may be any conventional processor, controller, microcontroller, or state machine. A processor may also be implemented as a combination of computing devices, e.g., a combination of a DSP and a microprocessor, a plurality of microprocessors, one or more microprocessors in conjunction with a DSP core, or any other such configuration.
The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A uniform pumping structure, comprising:
the wafer supporting seat is arranged in the vacuum chamber, and the lower edge of the wafer supporting seat is provided with a bending structure which turns upwards; and
the air extraction baffle is arranged at an air extraction opening of the vacuum chamber, the transverse dimension of the air extraction baffle is the average value of the outer transverse dimension and the inner transverse dimension of the bending structure, the air extraction baffle stretches into the bending structure to divide the bending structure into two sections of bending air extraction channels, and air in the vacuum chamber sequentially passes through the two sections of bending air extraction channels to be discharged out of the vacuum chamber.
2. The uniform suction structure according to claim 1, wherein the wafer support comprises a heating plate and a wafer positioning ring, wherein the wafer positioning ring is mounted on the periphery of the heating plate, the lower edge of the wafer positioning ring is provided with an upward turned annular bending structure,
the air extraction baffle is an annular air extraction baffle, and the diameter of the air extraction baffle is the average value of the outer diameter and the inner diameter of the annular bending structure.
3. The uniform suction structure of claim 2, wherein the wafer positioning ring is made of a ceramic material.
4. The uniform suction structure according to claim 1 or 2 wherein said upturned bent structure is a U-shaped structure comprising a vertical inner wall, a vertical outer wall, and a flat or curved bottom surface,
the air extraction baffle vertically extends downwards into the bending structure to divide the bending structure into air extraction channels with the sum of two sections of widths being conserved.
5. The uniform suction structure according to claim 1, wherein the suction baffle is fixedly installed or integrated on the inner wall of the vacuum chamber, and is arranged in a centering manner with the gas shower above the wafer support.
6. A vacuum chamber, comprising:
the spray header is arranged at the upper part of the vacuum chamber and is used for uniformly inputting reaction gas;
the wafer supporting seat is arranged in the vacuum chamber and below the spray header, and the edge of the lower part of the wafer supporting seat is provided with a bending structure which turns upwards;
an air extraction opening arranged below the wafer supporting seat; and
the air extraction baffle is arranged at the air extraction opening, the transverse dimension of the air extraction baffle is the average value of the outer transverse dimension and the inner transverse dimension of the bending structure, the air extraction baffle stretches into the bending structure to divide the bending structure into two sections of bending air extraction channels, and air in the vacuum chamber sequentially passes through the two sections of bending air extraction channels to be exhausted out of the vacuum chamber through the air extraction opening.
7. A thin film production apparatus comprising the uniform suction structure according to any one of claims 1 to 5.
8. A method for producing a film, comprising the steps of:
placing a wafer to be prepared into a wafer support of the uniform suction structure according to any one of claims 1 to 5; and
reaction gas is input into the vacuum chamber through the spray header, and waste gas is discharged out of the vacuum chamber through two bent air suction channels of the uniform air suction structure.
9. A wafer, wherein the surface of the wafer is attached with the thin film prepared by the thin film preparation method according to claim 8.
10. An electronic device comprising the wafer of claim 9.
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| CN202210933966.5A CN115418624B (en) | 2022-08-04 | 2022-08-04 | Uniform air suction structure, vacuum chamber, film preparation device and method |
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|---|---|---|---|---|
| CN113106418A (en) * | 2020-12-17 | 2021-07-13 | 芯三代半导体科技(苏州)有限公司 | Air extractor |
| CN113136567A (en) * | 2021-03-12 | 2021-07-20 | 拓荆科技股份有限公司 | Thin film deposition device and method for improving uniformity of cavity airflow |
| CN114717538A (en) * | 2021-04-21 | 2022-07-08 | 拓荆科技股份有限公司 | Thin film deposition device and deposition method thereof |
| CN216765043U (en) * | 2021-12-10 | 2022-06-17 | 佛山市佛欣真空技术有限公司 | Air exhaust opening structure for vacuum coating machine |
| CN216473477U (en) * | 2021-12-14 | 2022-05-10 | 拓荆科技股份有限公司 | Air exhaust ring assembly and deposition equipment with same |
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