CN212335289U - Thin film material deposition reaction device - Google Patents
Thin film material deposition reaction device Download PDFInfo
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- CN212335289U CN212335289U CN202020672794.7U CN202020672794U CN212335289U CN 212335289 U CN212335289 U CN 212335289U CN 202020672794 U CN202020672794 U CN 202020672794U CN 212335289 U CN212335289 U CN 212335289U
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Abstract
The utility model discloses a thin film material deposition reaction unit, include: the gas distribution table is used for carrying out atomic layer deposition on the surface of the film material; the diffusion structures are arranged on the gas distribution table at intervals, each diffusion structure comprises a first surrounding ring, a second surrounding ring and a third surrounding ring, the first surrounding ring, the second surrounding ring and the third surrounding ring are sequentially arranged on the gas distribution table at intervals, the second surrounding ring is positioned on the periphery of the first surrounding ring, and the third surrounding ring is positioned on the periphery of the second surrounding ring; the space inside the first surrounding ring is communicated with a reaction gas source, the space pumping device between the first surrounding ring and the second surrounding ring is communicated, and the space between the second surrounding ring and the third surrounding ring is communicated with an inert gas source. The utility model provides a thin film material deposition reaction unit can avoid reacting remaining precursor or reactant and make dirty thin film material deposition reaction unit.
Description
Technical Field
The utility model relates to an atomic layer deposition technical field, in particular to thin film material deposition reaction unit.
Background
Deposition reaction forms of thin film materials include atomic layer deposition reaction, chemical vapor deposition and the like, and taking the atomic layer deposition reaction of thin film materials as an example, the atomic layer deposition is a technology for forming a monoatomic deposition film by alternately introducing a precursor in a vapor phase into a reaction container to chemisorb and react on a substrate. In an atomic layer deposition process, the chemical reaction of a new atomic film is directly related to the previous atomic film in such a way that only one atomic layer is deposited per reaction.
The precursor will enter the reaction vessel in gaseous form, and the reaction vessel is generally provided with a gas supply structure for supplying the precursor to the surface of the substrate, and the gas supply structure blows the precursor to the surface of the substrate to form an atomic deposition film on the surface of the substrate. In this process, the gas supply structure needs to continuously supply the precursor to the substrate surface until the substrate surface is sufficiently contacted and reacted with a sufficient amount of the precursor. In fact, in order to achieve the purpose of fully contacting and reacting the precursor with the substrate surface, the precursor generally needs to be supplied in excess, that is, a small part of the precursor will remain after the reaction, and the precursor itself is active and is easily chemically adsorbed on the surface of any part in the reaction container, so that the reaction container is contaminated.
The above is only for the purpose of assisting understanding of the technical solutions of the present application, and does not represent an admission that the above is prior art.
SUMMERY OF THE UTILITY MODEL
The main objective of the present invention is to provide a thin film material deposition reaction apparatus, which aims to solve the problem that when the precursor is excessively supplied, the redundant precursor is chemically adsorbed on each component of the thin film material deposition reaction apparatus, so that the thin film material deposition reaction apparatus is dirty.
In order to achieve the above object, the present invention provides a thin film material deposition reaction apparatus, which comprises:
the gas distribution table is used for carrying out atomic layer deposition on the surface of the film material; and
the diffusion structures are arranged on the gas distribution table at intervals, each diffusion structure comprises a first surrounding ring, a second surrounding ring and a third surrounding ring, the first surrounding ring, the second surrounding ring and the third surrounding ring are sequentially arranged on the gas distribution table at intervals, the second surrounding ring is positioned on the periphery of the first surrounding ring, and the third surrounding ring is positioned on the periphery of the second surrounding ring; the space inside the first surrounding ring is communicated with a reaction gas source, the space between the first surrounding ring and the second surrounding ring is communicated with an air extracting device, and the space between the second surrounding ring and the third surrounding ring is communicated with an inert gas source;
the reaction gas source is used for filling reaction gas into the space inside the first surrounding ring, the air extractor is used for extracting gas from the space inside the first surrounding ring and the space between the second surrounding ring and the third surrounding ring, and the inert gas source is used for filling inert gas into the space between the second surrounding ring and the third surrounding ring.
In an embodiment of the present invention, the gas distribution platform has an inlet hole, the inlet hole is located inside the first surrounding ring, the inlet hole is communicated with the reaction gas source, the reaction gas source passes through the inlet hole to the reaction gas is filled inside the space inside the first surrounding ring.
In an embodiment of the present invention, the gas distribution platform has an air exhaust hole, the air exhaust hole is located between the first surrounding ring and the second surrounding ring, the air exhaust hole is communicated with the air exhaust device, the air exhaust device passes through the air exhaust hole to exhaust gas in the space between the first surrounding ring and the second surrounding ring and the third surrounding ring.
In an embodiment of the present invention, the gas distribution platform has been provided with an inflation hole, the inflation hole is located between the second surrounding ring and the third surrounding ring, the inflation hole is communicated with the inert gas source, the inert gas source passes through the inflation hole to fill inert gas into the space between the second surrounding ring and the third surrounding ring.
In an embodiment of the present invention, the gas distribution table has an installation cavity, and a plurality of the diffusion structures are disposed at intervals on a bottom wall of the installation cavity;
the gas distribution table is provided with a conveying inlet communicated with the mounting cavity, and the conveying inlet is used for passing through a membrane material;
the bottom wall of the installation cavity is provided with a first pumping hole adjacent to the conveying inlet, and the first pumping hole is used for pumping gas out of the installation cavity.
In an embodiment of the present invention, the bottom wall of the installation cavity is adjacent to the transfer inlet, and a plurality of first air inlet holes are further formed in the transfer inlet, and the first air inlet holes are located between the first pumping hole and the transfer inlet, and the first air inlet holes are used for filling inert gas into the installation cavity.
The utility model discloses an in one embodiment, first income gas groove has been seted up to the diapire of installation cavity, first income gas groove is located the transfer inlet with between the first extraction opening, it is a plurality of first income gas pocket is seted up in the diapire of first income gas groove.
In an embodiment of the present invention, the gas distribution table further has a delivery outlet communicating with the installation cavity, and the delivery outlet is used for passing through a membrane material;
and a second air pumping hole is formed in the bottom wall of the mounting cavity and is close to the conveying outlet, and the second air pumping hole is used for pumping air out of the mounting cavity.
The utility model discloses an in an embodiment, the diapire of installation cavity is close to conveying export has still seted up a plurality of second and has gone into the gas pocket, and is a plurality of the second goes into the gas pocket and is located the second extraction opening with between the conveying export, the second go into the gas pocket be used for to fill into inert gas in the installation cavity.
The utility model discloses an in one embodiment, the diapire of installation cavity has been seted up the second and has been gone into the gas groove, the second is gone into the gas groove and is located the transfer exit with between the second extraction opening, it is a plurality of the second is gone into the gas pocket and is seted up in the diapire of second income gas groove.
In the scheme of the embodiment, the first surrounding ring, the second surrounding ring and the third surrounding ring which are sequentially arranged at intervals are arranged on the gas distribution table, the second surrounding ring is positioned at the periphery of the first surrounding ring, and the third surrounding ring is positioned at the periphery of the second surrounding ring; the space inside the first surrounding ring is communicated with a reaction gas source, the space between the first surrounding ring and the second surrounding ring is communicated with an air extracting device, and the space between the second surrounding ring and the third surrounding ring is communicated with an inert gas source. Therefore, after the reaction gas is supplied to the space inside the first surrounding ring through the reaction gas source, the reaction gas flows out from the space inside the first surrounding ring and is in contact with the membrane material conveyed on the gas distribution table to form the atomic deposition membrane on the membrane material, the redundant reaction gas which does not participate in the reaction diffuses from the space inside the first surrounding ring to the space between the second surrounding ring and the third surrounding ring, and the reaction gas in the space between the second surrounding ring and the third surrounding ring is pumped and recovered outwards through the air pumping device, so that the phenomenon that the residual reaction gas flows everywhere and causes the pollution of the thin-film material deposition reaction device can be avoided. In addition, inert gas is filled into the space between the second surrounding ring and the third surrounding ring through an inert gas source, so that a plurality of diffusion structures can be isolated through the inert gas, and the phenomenon that residual reaction gas flows everywhere to cause the pollution of a thin film material deposition reaction device due to the flowing of the residual reaction gas is further avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a thin film material deposition reaction apparatus according to the present invention;
fig. 2 is a partial structural schematic diagram of fig. 1.
The reference numbers illustrate:
| reference numerals | Name (R) | Reference numerals | Name (R) |
| 1 | Gas distribution table | 15 | The second |
| 11 | |
16 | |
| 111 | |
17 | |
| 112 | |
18 | |
| 12 | First air extraction opening | 2 | |
| 13 | The first |
21 | First surrounding ring |
| 131 | A |
22 | Second surrounding |
| 14 | Second air extraction opening | 23 | Third surrounding ring |
The objects, features and advantages of the present invention will be further described with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
It should be noted that all the directional indicators (such as upper, lower, left, right, front and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the motion situation, etc. in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indicator is changed accordingly.
In the present application, unless expressly stated or limited otherwise, the terms "connected" and "fixed" are to be construed broadly, e.g., "fixed" may be fixedly connected or detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In addition, descriptions in the present application as to "first", "second", and the like are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit to the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. Throughout this document, "and/or" is meant to include three juxtaposed aspects, exemplified by "A and/or B," including either the A aspect, or the B aspect, or both A and B. In addition, the technical solutions in the embodiments may be combined with each other, but it must be based on the realization of those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should not be considered to exist, and is not within the protection scope of the present invention.
The utility model provides a thin film material deposition reaction unit.
In an embodiment of the present invention, referring to fig. 1 in combination with fig. 2, the thin film material deposition reaction apparatus includes:
the gas distribution table 1 is used for carrying out atomic layer deposition on the surface of the membrane material; and
the diffusion structures 2 are arranged on the gas distribution table 1 at intervals, each diffusion structure 2 comprises a first surrounding ring 21, a second surrounding ring 22 and a third surrounding ring 23, the first surrounding ring 21, the second surrounding ring 22 and the third surrounding ring 23 are sequentially arranged on the gas distribution table 1 at intervals, the second surrounding ring 22 is arranged on the periphery of the first surrounding ring 21, and the third surrounding ring 23 is arranged on the periphery of the second surrounding ring 22; the space inside the first surrounding ring 21 is communicated with a reaction gas source, the space between the first surrounding ring 21 and the second surrounding ring 22 is communicated with an air extractor, and the space between the second surrounding ring 22 and the third surrounding ring 23 is communicated with an inert gas source;
the reaction gas source is used for filling reaction gas into the space inside the first surrounding ring 21, the air extractor is used for extracting gas from the space inside the first surrounding ring 21 and the space between the second surrounding ring 22 and the third surrounding ring 23, and the inert gas source is used for filling inert gas into the space between the second surrounding ring 22 and the third surrounding ring 23.
In this embodiment, the gas distribution table 1 may be provided with a plurality of roller structures for conveying, so as to carry and convey the film material, and the gas distribution table 1 is further configured to supply a gaseous precursor or a reaction gas to the surface of the film material, so as to perform an atomic deposition reaction on the surface of the film material to form an atomic deposition layer.
The materials of the first surrounding ring 21, the second surrounding ring 22, and the third surrounding ring 23 are not limited, and may be, for example, metal or metal alloy, so that the first surrounding ring 21 and the second surrounding ring 22 have higher structural strength and longer service life. The reactive gas source may be any device capable of inputting reactive gas into the space inside the first surrounding ring 21, the inert gas source may be any device capable of inputting reactive gas into the space between the second surrounding ring 22 and the third surrounding ring 23, and the air pumping device may be any device capable of pumping air out of the space between the first surrounding ring 21 and the second surrounding ring 22, which is not limited herein.
This film material deposition reaction unit is when using, the membrane material is laid in gas distribution platform 1, and cover the notch of diffusion tank, the membrane material conveys forward on gas distribution platform 1, the different positions on membrane material surface continue from the upper surface of first purse ring 21 to pass through, the reaction gas source supplies the active gaseous precursor of chemical property or reaction gas to in the space of first purse ring 21 inboard, make reaction gas adsorb on the membrane material surface, be atomic deposition layer at membrane material surface deposition, realize the atomic layer deposition on membrane material surface. The residual gaseous precursor or reaction gas in the reaction is diffused into the space between the first surrounding ring 21 and the second surrounding ring, and the gaseous precursor or reaction gas in the space between the first surrounding ring 21 and the second surrounding ring is extracted and recovered outwards through the air extractor, so that the waste of the residual gaseous precursor or reaction gas in the reaction can be avoided, the mutual flow channeling and interference of the gaseous precursor or reaction gas among a plurality of diffusion structures 2 can be avoided, and the controllability of the coating range and thickness of the surface of the film material is improved. Inert gas is filled into the space between the second surrounding ring 22 and the third surrounding ring 23 through an inert gas source, so that the plurality of diffusion structures 2 are isolated through the inert gas, mutual flow and interference of gaseous precursors or reaction gases between the plurality of diffusion structures 2 are avoided, meanwhile, the inert gas can also flow into the space between the first surrounding ring 21 and the second surrounding ring 22 after being filled, and is outwards pumped out through an air pumping device, and when the inert gas flows to the space between the first surrounding ring 21 and the second surrounding ring 22 from the space between the second surrounding ring 22 and the third surrounding ring 23, an inert gas wall can be formed, so that mutual flow and interference of the gaseous precursors or the reaction gases between the plurality of diffusion structures can be further prevented.
It is worth pointing out that the thin film material deposition reaction device is not limited to only including one gas distribution table 1, for example, the thin film material deposition reaction device may include two gas distribution tables 1 stacked up and down, the upper surface of the upper gas distribution table 1 and the lower surface of the lower gas distribution table 1 may both be provided with a plurality of diffusion structures 2, so that two films may respectively pass through the surfaces of the diffusion structures 2 on the two gas distribution tables 1, and the diffusion structures 2 may be used to implement the corresponding atomic layer deposition process on the two films, thereby implementing the atomic layer deposition reaction on the two films at the same time. The thin film material deposition reaction apparatus having the same or similar structure as the thin film material deposition reaction apparatus composed of the gas distribution table 1 and the diffusion structures 2 in the embodiment of the present invention is considered to fall within the protection scope of the present invention, and is not limited to specifically adopting several gas distribution tables 1 and several diffusion structures 2.
In the scheme of the embodiment, the gas distribution table 1 is provided with a first surrounding ring 21, a second surrounding ring 22 and a third surrounding ring 23 which are sequentially arranged at intervals, wherein the second surrounding ring 22 is positioned at the periphery of the first surrounding ring 21, and the third surrounding ring 23 is positioned at the periphery of the second surrounding ring 22; the space inside the first surrounding ring 21 is communicated with a reaction gas source, the space between the first surrounding ring 21 and the second surrounding ring 22 is communicated with an air extractor, and the space between the second surrounding ring 22 and the third surrounding ring 23 is communicated with an inert gas source. Therefore, after the reaction gas is supplied to the space inside the first surrounding ring 21 by the reaction gas source, the reaction gas flows outwards from the space inside the first surrounding ring 21 and contacts with the membrane material conveyed on the gas distribution table 1 to form an atomic deposition membrane on the membrane material, the excessive reaction gas which does not participate in the reaction diffuses from the space inside the first surrounding ring 21 to the space between the second surrounding ring 22 and the third surrounding ring 23, and the reaction gas in the space between the second surrounding ring 22 and the third surrounding ring 23 is pumped outwards and recovered by the air pumping device, so that the reaction residual reaction gas can be prevented from flowing around to cause the pollution of the thin-film material deposition reaction device. In addition, inert gas is filled into the space between the second surrounding ring 22 and the third surrounding ring 23 through an inert gas source, so that the inert gas can isolate a plurality of diffusion structures 2, and the phenomenon that residual reaction gas flows around to cause the pollution of a thin film material deposition reaction device is further avoided.
In an embodiment of the present invention, as shown in fig. 1 and fig. 2, the gas distribution platform 1 has an inlet hole 16, the inlet hole 16 is located inside the first surrounding ring 21, the inlet hole 16 is communicated with the reaction gas source, and the reaction gas source fills the reaction gas into the space inside the first surrounding ring 21 through the inlet hole 16.
In this embodiment, the number of the gas inlets 16 is not limited, and the gas inlets 16 are used for introducing a gaseous precursor or a reaction gas, which is active in chemical property and capable of being chemically adsorbed on the surface of the film material, and is deposited as an atom deposition layer on the surface of the film material. The reaction gas source can be connected with the gas inlet 16 through a gas pipe, or can be connected with the gas inlet 16 through a gas circulation channel arranged on the gas distribution table 1, so as to fill the space inside the first enclosing ring 21 with the reaction gas.
In an embodiment of the present invention, as shown in fig. 1 and fig. 2, the gas distribution platform 1 has an air exhaust hole 17, the air exhaust hole 17 is located between the first surrounding ring 21 and the second surrounding ring 22, the air exhaust hole 17 is communicated with the air exhaust device, and the air exhaust device exhausts the gas in the space inside the first surrounding ring 21 and the space between the second surrounding ring 22 and the third surrounding ring 23 through the air exhaust hole 17.
In this embodiment, the air exhaust holes 17 may be through holes, and the number of the air exhaust holes 17 is not limited, and the air exhaust holes 17 may be annular holes, for example, the air exhaust holes 17 are disposed around the outer circumference of the first surrounding ring 21, and are not limited herein. The pumping holes 17 are used for pumping out gas in the space inside the first surrounding ring 21 and the space between the second surrounding ring 22 and the third surrounding ring 23. Because of the fluidity of the gas, after the reaction gas is filled into the space inside the first surrounding ring 21, the reaction gas flows into the space between the first surrounding ring 21 and the second surrounding ring 22. After filling the space between the second surrounding ring 22 and the third surrounding ring 23 with the inert gas, the inert gas will also flow into the space between the first surrounding ring 21 and the second surrounding ring 22. Therefore, the flow of the reaction gas and the flow of the inert gas form a gas wall capable of blocking the gas channeling among the plurality of diffusion structures 2, and the reaction gas in the space inside the first surrounding ring 21 is prevented from flowing to each part of the gas distribution table 1 to cause the pollution of the gas distribution table 1.
In an embodiment of the present invention, as shown in fig. 1 and fig. 2, the gas distribution platform 1 is provided with an inflation hole 18, the inflation hole 18 is located between the second surrounding ring 22 and the third surrounding ring 23, the inflation hole 18 is communicated with the inert gas source, and the inert gas source is filled with inert gas into the space between the second surrounding ring 22 and the third surrounding ring 23 through the inflation hole 18.
In the present embodiment, the number of the gas filling holes 18 is not limited, and the gas filling holes 18 are used for filling with inert gas, which may be inert gas such as nitrogen. The inert gas rushing in from the gas filling holes 18 will diffuse into the space between the second surrounding ring 22 and the third surrounding ring 23 and be extracted outwards through the gas extraction holes 17, and the gaseous precursor or reaction gas flowing out from the space inside the first surrounding ring 21 will be mixed with the inert gas in the space between the first surrounding ring 21 and the second surrounding ring 22, and the inert gas can be used as a carrier of the gaseous precursor or reaction gas and be extracted outwards intensively through the gas extraction holes 17. The inert gas rushing from the gas filling holes 18 flows into the drawing-out groove, and the inert gas flows to form a gas wall among the diffusion structures 2, so that the gas flowing among the diffusion structures 2 is further isolated, the outward flowing of the gaseous precursor or the reaction gas in each diffusion structure 2 is also avoided, the gaseous precursor or the reaction gas is effectively prevented from flowing to the gas distribution table 1 or other parts of the thin film material deposition reaction device and attaching to the gas distribution table 1 or other parts of the thin film material deposition reaction device, and an atom deposition layer is formed on the surface of the gas distribution table 1 or the parts of the thin film material deposition reaction device, so that the gas distribution table 1 is polluted. Of course, the number of the gas filling holes 18 may be multiple, and the multiple gas filling holes 18 are arranged between the second surrounding ring 22 and the third surrounding ring 23 at intervals so as to improve the efficiency of filling the inert gas into the space between the second surrounding ring 22 and the third surrounding ring 23 and the diffusion range of the inert gas, and further improve the blocking effect of the inert gas on the gas channeling among the multiple diffusion structures 2.
In an embodiment of the present invention, referring to fig. 1 and combining with fig. 2, the gas distribution table 1 has a mounting cavity 11, and a plurality of diffusion structures 2 are disposed at intervals on a bottom wall of the mounting cavity 11;
the gas distribution table 1 is provided with a conveying inlet 111 communicated with the installation cavity 11, and the conveying inlet 111 is used for passing through a membrane material;
the bottom wall of the installation cavity 11 is opened with a first pumping hole 12 adjacent to the transmission inlet 111, and the first pumping hole 12 is used for pumping the gas in the installation cavity 11.
In the present embodiment, the installation cavity 11 of the gas distribution stage 1 is used as a reaction cavity for atomic layer deposition reaction, a film material enters the installation cavity 11 through the delivery inlet 111 and passes over the plurality of diffusion structures 2, and the film material contacts with the gaseous precursor or reaction gas diffused out by the diffusion structures 2 to deposit a layer of atomic deposition film on the surface of the film material. Because the width of the transfer inlet 111 needs to be slightly wider than the width of the film material so as to facilitate the film material to pass through, a certain gap exists between the film material and the transfer inlet 111, and the gap enables the gas in the installation cavity 11 to flow into the external environment, thereby causing pollution to the external environment; likewise, gas from the external environment can also enter the installation cavity 11 through the gap, and the gas from the external environment will be mixed with the gas in the installation cavity 11, which will greatly interfere with the proceeding of the atomic layer deposition reaction. And set up first extraction opening 12 through the neighbouring transfer inlet 111 of diapire at installation cavity 11, not only can outwards take out the remaining gas of reaction from the bottom of gas distribution platform 1 in the installation cavity 11, can take out the gas in external environment through the entering installation cavity 11 of transfer inlet 111 moreover, avoid the gas in external environment to mix with the gas in the installation cavity 11 mutually to atomic deposition reaction in the installation cavity 11 has been guaranteed can not receive external environment's influence. Meanwhile, the gas in the installation cavity 11 is prevented from entering the external environment through the delivery inlet 111 to cause pollution.
In an embodiment of the present invention, referring to fig. 1 and referring to fig. 2, a plurality of first air inlets 131 are further formed on the bottom wall of the installation cavity 11 near the transmission inlet 111, the plurality of first air inlets 131 are located between the first air pumping hole 12 and the transmission inlet 111, and the first air inlets 131 are used for filling inert gas into the installation cavity 11.
In the present embodiment, the plurality of first air inlet holes 131 are opened in the bottom wall of the mounting chamber 11 and located between the first pumping hole 12 and the transfer inlet 111. The inert gas filled into the first gas inlet holes 131 is pumped out through the first gas pumping hole 12 at the same time, so that the inert gas filled into the installation cavity 11 from the first gas inlet holes 131 flows to the first gas pumping hole 12 to form a gas wall at the transfer inlet 111, and the gas in the installation cavity 11 is isolated from the gas in the external environment by the gas wall, so that the gas in the installation cavity 11 is prevented from flowing to the external environment to cause pollution of the external environment, and the gas in the external environment is also prevented from flowing into the installation cavity 11 to interfere with the atomic deposition reaction.
In an embodiment of the present invention, referring to fig. 1 and referring to fig. 2, a first air inlet groove 13 is formed in the bottom wall of the installation cavity 11, the first air inlet groove 13 is located between the conveying inlet 111 and the first air pumping opening 12, and the plurality of first air inlet holes 131 are formed in the bottom wall of the first air inlet groove 13.
In this embodiment, the bottom wall of the mounting cavity 11 further has a first air inlet groove 13 between the transmission inlet 111 and the first air extraction opening 12, the bottom wall of the first air inlet groove 13 has a plurality of first air inlet holes 131, the first air inlet hole 131 is used for filling inert gas into the first air inlet groove 13, and the inert gas is diffused in the first air inlet groove 13 and then flows out through the notch of the first air inlet groove 13. Meanwhile, the inert gas is extracted from the bottom of the gas distribution table 1 through the first extraction opening 12, so that the inert gas at the transmission inlet 111 flows to form a gas wall, the installation cavity 11 is isolated from the external environment, the gas in the installation cavity 11 is prevented from flowing into the external environment to pollute the external environment, and the gas in the external environment is also prevented from entering the installation cavity 11 to interfere with the atomic deposition reaction in the installation cavity 11.
In an embodiment of the present invention, referring to fig. 1 and combining with fig. 2, the gas distribution table 1 further has a delivery outlet 112 communicating with the installation cavity 11, and the delivery outlet 112 is used for passing through the membrane material;
the bottom wall of the installation cavity 11 is opened with a second pumping hole 14 adjacent to the delivery outlet 112, and the second pumping hole 14 is used for pumping the gas in the installation cavity 11.
In this embodiment, the installation cavity 11 of the gas distribution table 1 is used as a reaction cavity for the ald reaction, and the film material enters the next stage device through the delivery outlet 112. Since the width of the delivery outlet 112 needs to be slightly wider than the width of the film material in order for the film material to pass through, there is a certain gap between the film material and the delivery outlet 112, which allows the gas in the installation chamber 11 to flow into the next-stage apparatus, causing contamination in the next-stage apparatus; similarly, the gas in the next stage device can enter the installation cavity 11 through the gap, and the gas in the next stage device is mixed with the gas in the installation cavity 11, which greatly interferes with the atomic layer deposition reaction. And through setting up second extraction opening 14 near conveying export 112 at the diapire of installation cavity 11, not only can outwards take out the remaining gas of reaction in the installation cavity 11 from the bottom of gas distribution platform 1, can take out the gas in the entering installation cavity 11 of next stage device through conveying export 112 moreover, avoid the gas in next stage device to mix with the gas in installation cavity 11 mutually to atomic deposition reaction in the installation cavity 11 has been guaranteed can not receive the influence of the gas in the next stage device. Meanwhile, the gas in the installation cavity 11 is prevented from entering the next-stage device through the delivery outlet 112 to cause pollution.
In an embodiment of the present invention, referring to fig. 1 and referring to fig. 2, a plurality of second air inlets (not shown) are further formed on the bottom wall of the installation cavity 11 adjacent to the delivery outlet 112, the second air inlets are located between the second pumping hole 14 and the delivery outlet 112, and the second air inlets are used for filling inert gas into the installation cavity 11.
In the present embodiment, a plurality of second air inlet holes are opened in the bottom wall of the mounting chamber 11 and located between the second pumping hole 14 and the delivery outlet 112. The inert gas filled into the plurality of second gas inlet holes is simultaneously pumped out from the installation cavity 11 through the second pumping hole 14, so that the inert gas filled into the installation cavity 11 from the plurality of first gas inlet holes 131 flows to the second pumping hole 14 to form a gas wall at the delivery outlet 112, and the gas wall separates the gas in the installation cavity 11 from the gas in the next-stage device to prevent the gas in the installation cavity 11 from flowing to the next-stage device to cause pollution of the next-stage device, and simultaneously prevents the gas in the next-stage device from flowing into the installation cavity 11 to interfere with the atomic deposition reaction.
The utility model discloses an in the embodiment, the second groove 15 of admitting air has been seted up to the diapire of installation cavity 11, and the second groove 15 of admitting air is located between conveying export 112 and the second extraction opening 14, and a plurality of second income gas pockets are seted up in the diapire of second groove 15 of admitting air.
In this embodiment, the bottom wall of the mounting cavity 11 further has a second air inlet groove 15 between the transmission outlet 112 and the second air pumping hole 14, the bottom wall of the second air inlet groove 15 has a plurality of second air inlet holes, the second air inlet hole fills the inert gas into the second air inlet groove 15, and the inert gas diffuses in the second air inlet groove 15 and flows outwards through the notch of the second air inlet groove 15. Meanwhile, the inert gas is extracted from the bottom of the gas distribution table 1 through the second extraction opening 14, so that the inert gas at the delivery outlet 112 flows to form a gas wall, so as to isolate the installation cavity 11 from the next-stage device, prevent the gas in the installation cavity 11 from flowing into the next-stage device to pollute the next-stage device, and prevent the gas in the next-stage device from entering the installation cavity 11 to interfere with the atomic deposition reaction in the installation cavity 11.
The above only is the preferred embodiment of the present invention, not limiting the scope of the present invention, all the equivalent structure changes made by the contents of the specification and the drawings under the inventive concept of the present invention, or the direct/indirect application in other related technical fields are included in the patent protection scope of the present invention.
Claims (10)
1. A thin film material deposition reaction apparatus, comprising:
the gas distribution table is used for carrying out atomic layer deposition on the surface of the film material; and
the diffusion structures are arranged on the gas distribution table at intervals, each diffusion structure comprises a first surrounding ring, a second surrounding ring and a third surrounding ring, the first surrounding ring, the second surrounding ring and the third surrounding ring are sequentially arranged on the gas distribution table at intervals, the second surrounding ring is positioned on the periphery of the first surrounding ring, and the third surrounding ring is positioned on the periphery of the second surrounding ring; the space inside the first surrounding ring is communicated with a reaction gas source, the space between the first surrounding ring and the second surrounding ring is communicated with an air extracting device, and the space between the second surrounding ring and the third surrounding ring is communicated with an inert gas source;
the reaction gas source is used for filling reaction gas into the space inside the first surrounding ring, the air extractor is used for extracting gas from the space inside the first surrounding ring and the space between the second surrounding ring and the third surrounding ring, and the inert gas source is used for filling inert gas into the space between the second surrounding ring and the third surrounding ring.
2. The thin film material deposition reaction apparatus as claimed in claim 1, wherein the gas distribution platform is provided with a gas inlet hole, the gas inlet hole is located inside the first surrounding ring, the gas inlet hole is communicated with the reaction gas source, and the reaction gas source fills the reaction gas into the space inside the first surrounding ring through the gas inlet hole.
3. The thin film material deposition reaction apparatus as claimed in claim 1, wherein the gas distribution stage defines a pumping hole, the pumping hole is located between the first surrounding ring and the second surrounding ring, the pumping hole is communicated with the pumping device, and the pumping device pumps the gas from the space inside the first surrounding ring and the space between the second surrounding ring and the third surrounding ring through the pumping hole.
4. The thin film material deposition reaction device as claimed in claim 1, wherein the gas distribution stage is provided with a gas filling hole, the gas filling hole is located between the second surrounding ring and the third surrounding ring, the gas filling hole is communicated with the inert gas source, and the inert gas source fills inert gas into a space between the second surrounding ring and the third surrounding ring through the gas filling hole.
5. The thin film material deposition reaction apparatus as claimed in any one of claims 1 to 4, wherein the gas distribution stage has a mounting cavity, and a plurality of diffusion structures are arranged at intervals on a bottom wall of the mounting cavity;
the gas distribution table is provided with a conveying inlet communicated with the mounting cavity, and the conveying inlet is used for passing through a membrane material;
the bottom wall of the installation cavity is provided with a first pumping hole adjacent to the conveying inlet, and the first pumping hole is used for pumping gas out of the installation cavity.
6. The thin film material deposition reaction apparatus as claimed in claim 5, wherein a plurality of first gas inlet holes are further formed in the bottom wall of the installation cavity adjacent to the transfer inlet, the plurality of first gas inlet holes are located between the first pumping hole and the transfer inlet, and the first gas inlet holes are used for filling inert gas into the installation cavity.
7. The thin film material deposition reaction apparatus as claimed in claim 6, wherein a first gas inlet groove is formed in a bottom wall of the mounting chamber, the first gas inlet groove is located between the transfer inlet and the first pumping hole, and the plurality of first gas inlet holes are formed in the bottom wall of the first gas inlet groove.
8. The thin film material deposition reaction apparatus as claimed in claim 5, wherein the gas distribution stage further defines a delivery outlet communicating with the installation cavity, and the delivery outlet is used for passing through a film material;
and a second air pumping hole is formed in the bottom wall of the mounting cavity and is close to the conveying outlet, and the second air pumping hole is used for pumping air out of the mounting cavity.
9. The thin film material deposition reaction apparatus as claimed in claim 8, wherein a plurality of second gas inlets are further formed in the bottom wall of the installation cavity adjacent to the delivery outlet, the plurality of second gas inlets are located between the second pumping port and the delivery outlet, and the second gas inlets are used for filling an inert gas into the installation cavity.
10. The thin film material deposition reaction apparatus as claimed in claim 9, wherein a second gas inlet groove is formed in a bottom wall of the mounting chamber, the second gas inlet groove is located between the delivery outlet and the second pumping hole, and the plurality of second gas inlet holes are formed in the bottom wall of the second gas inlet groove.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114717538A (en) * | 2021-04-21 | 2022-07-08 | 拓荆科技股份有限公司 | Thin film deposition device and deposition method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114717538A (en) * | 2021-04-21 | 2022-07-08 | 拓荆科技股份有限公司 | Thin film deposition device and deposition method thereof |
| CN114717538B (en) * | 2021-04-21 | 2023-10-31 | 拓荆科技股份有限公司 | Film deposition device and deposition method thereof |
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