TW201606845A - Plasma treatment device and exhaust structure thereof - Google Patents

Abstract

Even if a high-power high-frequency power is applied to a support base, the unexpected discharge or plasma in a treatment room can be effectively prevented from entering an exhaust area. A plasma treatment device places a substrate (G) on a support surface of a support base (23) in a treatment room (4), and applies a bias high-frequency power to the support base (23) and also conducts plasma treatment at the same time to the substrate (G) in the treatment room (4). The plasma treatment device is characterized by comprising multiple separation members (50), which are placed at a location under the support surface and divide the treatment room (4) into a treatment area (41) for the plasma treatment to the substrate (G) and an exhaust area (42) connected to an exhaust system. The separation members, which are made of conductive materials, are connected to ground and do not include openings. The adjacent separation members (50) are disposed to form compartments in such a way that treatment gas supplied to the treatment area (41) is guided to the exhaust area (42).

Description

Plasma processing device and exhaust structure used therefor

The present invention relates to a plasma processing apparatus for plasma-treating a substrate and an exhaust structure therefor.

In the manufacturing process of a semiconductor device or a flat panel display (FPD), there is a process of performing plasma treatment such as plasma etching or film formation on a substrate.

In the plasma treatment as described above, various plasma processing apparatuses such as a plasma etching apparatus or a plasma CVD film forming apparatus are used. When the plasma treatment is performed by the plasma processing apparatus, a plasma of a predetermined gas is generated in the processing chamber while the substrate is placed on the mounting table (the mounting table is placed in a processing chamber held in a vacuum). And the substrate is subjected to a plasma treatment.

There is known a technique in which, in a plasma processing apparatus, in order to prevent plasma in a processing region in a processing chamber from intruding into an exhaust region, a discharge occurs in a member of an exhaust path or a member disposed in the exhaust path, and Between the inner wall of the processing chamber and the mounting table, an opening portion that completely forms a punching hole or a slit is provided, and a partition of the gas passage is secured, and the partition plate is grounded. (for example, Patent Document 1).

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-238980

However, in such a plasma processing apparatus, in order to efficiently attract ions in the plasma, a high frequency bias is applied to the mounting table. In the plasma processing of a large substrate, it is necessary to make such a high-frequency bias high-power, but after applying high-frequency high-frequency power to the mounting table, when the separator is grounded, it is formed in the partition. The punching of the plate causes a glow discharge, or the glow discharge moves back and forth, and the plasma may become unstable.

According to the present invention, in consideration of the circumstances, a plasma processing apparatus and a plasma processing apparatus like the above are provided even when high-frequency high-frequency power is applied to the mounting table, as in the case of processing a large substrate. The exhaust gas structure used is an object which can effectively prevent discharge or plasma in an undesired portion of the processing chamber from entering the exhaust region.

In order to solve the above problems, the first aspect of the present invention is Provided is a plasma processing apparatus comprising: a processing chamber that houses a substrate and applies a plasma treatment; the mounting table has a mounting surface on which the substrate is placed in the processing chamber; and a processing gas supply system that supplies the processing chamber a processing gas; an exhaust system that exhausts the processing chamber; a plasma generating mechanism that generates a plasma for plasma processing the substrate placed on the mounting table; and a high frequency power supply for the mounting table a bias high frequency power is applied; and a plurality of partition members are disposed below the mounting surface, and the processing chamber is partitioned into a processing region for plasma-treating the substrate and an exhaust gas communicating with the exhaust system a region composed of a conductive material without an opening, the plurality of partition members being connected to a ground potential, and adjacent partition members being disposed therebetween to be formed to be supplied to the processing region The manner in which the process gas is directed to the compartment of the exhaust zone is arranged at intervals.

According to a second aspect of the present invention, there is provided an exhaust structure having a processing chamber (a substrate is placed and plasma treatment is applied), a mounting table (having a mounting surface on which the substrate is placed in the processing chamber), and processing a gas supply system (a process gas is supplied to the processing chamber), an exhaust system (exhausting the processing chamber), and a plasma generating mechanism (a plasma for generating a plasma treatment on a substrate placed on the mounting table) And a plasma processing apparatus for high-frequency power supply (a high-frequency power for applying bias voltage to the mounting stage), wherein the processing gas supplied to the processing chamber is guided to the exhaust system, and the exhaust structure is characterized The system has a plurality of partition members disposed at a position below the mounting surface, and partitioning the processing chamber into a processing region for plasma-treating the substrate and communicating with the exhaust system The exhaust region is composed of a conductive material and does not have an opening, and the plurality of partition members are connected to a ground potential, and adjacent partition members are formed therebetween to be supplied to the foregoing The processing gas in the processing region is guided to the compartment of the exhaust region, and is disposed at intervals.

In the above first aspect and second aspect, it is preferable to have a shielding member at a height position different from the partition member, and the shielding member is provided to shield at least a part of the compartment in a plan view. It is made of a conductive material and does not have an opening and is connected to a ground potential. It is preferable that the shielding member is provided at a position below the partition member, and it is preferable to provide all of the partitions in a plan view.

The partition member may be disposed between an inner wall of the processing chamber and a side wall of the mounting table opposite thereto. In this case, the processing chamber has a space having a rectangular planar shape, the mounting table has a rectangular shape in plan view, and the partition member is provided corresponding to each side wall of the mounting table, and the compartment is It is formed in a corner portion of the space of the aforementioned rectangular shape.

Further, it is preferable that the plasma generating mechanism has a high frequency antenna for generating inductively coupled plasma in the processing region. In this case, the high-frequency antenna may be provided on the upper portion of the processing chamber via a dielectric window, or may be provided on the upper portion of the processing chamber via a metal window.

According to the invention, a plurality of partition members are provided at a position below the mounting surface (the plurality of partition members separate the processing chamber into a processing region for plasma-treating the substrate and an exhaust region communicating with the exhaust system, The conductive material is formed without an opening, and a plurality of partition members are connected to the ground potential, and a method of guiding the processing gas supplied to the processing region to the compartment of the exhaust region is formed therebetween. , the adjacent partition members are arranged at intervals. Thereby, the partition member functions as a counter electrode for biasing high-frequency power, and it is possible to suppress the plasma from entering the exhaust region and causing the member existing in the exhaust path of the exhaust system to discharge, and to separate Since the member does not have an opening portion, it is difficult to cause an undesired discharge in the processing chamber. Therefore, the entire plasma generated in the processing region can be stabilized.

1‧‧‧ body container

2‧‧‧Dielectric wall (dielectric member)

3‧‧‧Antenna room

4‧‧‧Processing room

13‧‧‧High frequency antenna

14‧‧‧matcher

15‧‧‧High frequency power supply

16‧‧‧Power supply components

19‧‧‧Power supply line

20‧‧‧Processing gas supply system

22‧‧‧ Terminal

23‧‧‧ mounting table

30‧‧‧Exhaust port

31‧‧‧Exhaust piping

32‧‧‧Automatic Pressure Control Valve (APC)

33‧‧‧vacuum pump

41‧‧‧Processing area

42‧‧‧Exhaust area

50‧‧‧Parts

50a, 52a‧‧‧ grounding wire

52‧‧‧Shielding members

60‧‧‧ Compartment

100‧‧‧Control Department

101‧‧‧User interface

102‧‧‧Memory Department

G‧‧‧Substrate

Fig. 1 is a cross-sectional view showing a plasma processing apparatus according to an embodiment of the present invention.

Fig. 2 is a horizontal sectional view showing a plasma processing apparatus according to an embodiment of the present invention.

Fig. 3 is a horizontal cross-sectional view showing another example of the arrangement of the exhaust ports of the plasma processing apparatus.

Fig. 4 is a cross-sectional view showing a plasma processing apparatus according to another embodiment of the present invention.

Fig. 5 is a view showing a plasma processing apparatus according to another embodiment of the present invention. Horizontal section view.

Fig. 6 is a perspective view showing a positional relationship between a partition member and a shielding member of a plasma processing apparatus according to another embodiment of the present invention.

Fig. 7 is a view showing the results of an experimental example.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Fig. 1 is a vertical sectional view showing a plasma processing apparatus according to an embodiment of the present invention. Fig. 2 is a horizontal sectional view showing a plasma processing apparatus according to an embodiment of the present invention. The plasma processing apparatus is an inductively coupled plasma processing apparatus that performs inductively coupled plasma processing such as etching treatment or ashing treatment on a rectangular substrate such as a glass substrate for FPD, in which an inductively coupled plasma is generated.

The plasma processing apparatus is an airtight main body container 1 having a rectangular tube shape made of an electrically conductive material, for example, an anodized aluminum. The body container 1 is assembled to be decomposable and grounded by a grounding wire 1a. The main body container 1 is partitioned into an antenna chamber 3 and a processing chamber 4 by a dielectric wall 2 . The dielectric wall 2 constitutes the top wall of the processing chamber 4. The dielectric wall 2 is made of ceramic such as Al ₂ O ₃ or quartz.

A support scaffold 5 that protrudes inward is provided between the side wall 3a of the antenna chamber 3 of the main body container 1 and the side wall 4a of the processing chamber 4, and the dielectric wall 2 is placed on the support scaffold 5.

In the lower part of the dielectric wall 2, a process gas is embedded The shower head housing 11 for body supply. The shower head housing 11 is formed in a cross shape and is formed to support the dielectric wall 2 from below, for example, a beam structure. Further, the shower head housing 11 that supports the dielectric wall 2 is suspended from the ceiling of the main body container 1 by a plurality of hangers (not shown). The metal support scaffold 5 and the shower head frame 11 may also be covered by a dielectric member.

The shower head frame 11 is made of a conductive material, preferably a metal, for example, anodized aluminum is applied to the inner surface or the outer surface thereof so as not to cause contaminants. The shower head housing 11 is formed with a horizontally extending gas flow path 12, and the gas flow path 12 is connected to a plurality of gas discharge holes 12a extending downward. On the other hand, a gas supply pipe 20a is provided in the center of the upper surface of the dielectric wall 2 so as to communicate with the gas flow path 12. The gas supply pipe 20a is inserted from the ceiling of the main body container 1 to the outside thereof, and is connected to the processing gas supply system 20 including the processing gas supply source, the valve system, and the like. Therefore, in the plasma processing, the processing gas supplied from the processing gas supply system 20 is supplied into the shower head housing 11 via the gas supply tube 20a, and is discharged into the processing chamber 4 from the lower gas discharge hole 12a. .

A high frequency (RF) antenna 13 is disposed in the antenna room 3. The high-frequency antenna 13 is configured such that the antenna wire 13a made of a metal having good conductivity such as copper or aluminum is disposed in any shape conventionally used in a ring shape or a spiral shape. It can also be a multiple antenna having a plurality of antenna sections.

A power supply member 16 extending upward from the antenna chamber 3 is connected to the terminal 22 of the antenna wire 13a. At the upper end of the power supply member 16, A high frequency power source 15 is connected to the power supply line 19. Further, on the power supply line 19, a matching unit 14 is interposed. Further, the radio-frequency antenna 13 is separated from the dielectric wall 2 by a spacer 17 (which is composed of an insulating member). Further, high-frequency power is supplied from the high-frequency power source 15 to the high-frequency antenna 13, for example, at a frequency of 13.56 MHz, whereby an induced electric field is formed in the processing chamber 4, and the induced electric field is used from the shower head housing 11. The process gas that is spit out is plasmad to produce an inductively coupled plasma.

A mounting table 23 is provided below the processing chamber 4 so as to face the high-frequency antenna 13 via the dielectric wall 2 (the mounting table 23 has a substrate G for mounting a rectangular shape) Mounting surface). The mounting table 23 has a main body 23a made of a conductive material such as aluminum whose surface is anodized, and an insulator frame 23b provided to house the main body 23a. The substrate G placed on the mounting table 23 is sucked and held by an electrostatic chuck (not shown).

The mounting table 23 is supported by the hollow pillars 25. The pillar 25 is inserted through the bottom of the main body container 1 and supported by a lifting mechanism (not shown) disposed outside the main body container 1. When the substrate G is loaded and unloaded, the mounting table 23 is moved upward by the lifting mechanism. drive. A bellows 26 that hermetically surrounds the stay 25 is disposed between the insulator frame 23b of the mounting table 23 and the bottom portion 4b of the main body container 1, whereby the processing chamber 4 can be secured even if the mounting table 23 moves up and down. The air tightness. Further, one of the four side walls 4a of the processing chamber 4 is provided with a loading/unloading port 27a for loading and unloading the substrate G, and a gate valve 27 for switching the loading and unloading of the substrate G. Further, it is also possible to provide a structure in which the elevating mechanism is not provided on the mounting table and is fixed.

The main body 23a of the mounting table 23 is connected to the high-frequency power source 29 via the matching unit 28 via a power supply line 25a provided in the hollow pillar 25. This high-frequency power source 29 applies high-frequency power for bias to the mounting table 23, for example, high-frequency power having a frequency of 6 MHz in the plasma processing. By the high frequency power by the bias voltage, ions in the plasma generated in the processing chamber 4 are efficiently introduced to the substrate G.

Further, in the mounting table 23, in order to control the temperature of the substrate G, a temperature control mechanism or a temperature sensor (not shown) including a heating means such as a ceramic heater or a refrigerant flow path is provided. The piping or wiring of the mechanisms and members are led out to the outside of the main body container 1 through the hollow pillars 25.

Between the inner wall of the processing chamber 4 (the inner portion of the side wall 4a) and the mounting table 23, four partition members 50 that partition the inside of the processing chamber 4 into the processing region 41 and the exhaust region 42 are provided. The partition member 50 is made of a plate material which has a rectangular shape without an opening and is made of a conductive material such as metal. Each of the partition members 50 is provided corresponding to each side surface of the mounting table 23, and is connected to the ground potential by the grounding wire 50a. Further, the partition member 50 may be electrically connected to the side wall 4a and grounded via the main body container 1. The adjacent partition members 50 are disposed between each other so as to form a partition 60 that guides the gas supplied to the processing region 41 to the exhaust region, and the partition 60 is present in the partition member. 50 forms the four corners of the face.

The processing region 41 is a region higher than the partition member 50 in the processing chamber 4, and is formed to perform plasma treatment on the substrate G. The area of the inductively coupled plasma. Further, the exhaust region 42 is a region lower than the partition member 50 in the processing chamber 4, and is a region for guiding the process gas from the processing region 41 to exhaust it.

The bottom portion 4b of the processing chamber 4 is provided along each of the side walls 4a of the processing chamber 4, for a total of eight exhaust ports 30, and the exhaust ports 30 are connected to the exhaust pipe 31. An automatic pressure control valve (APC) 32 and a vacuum pump 33 are connected to each of the exhaust pipes 31. Then, the inside of the processing chamber 4 is exhausted by the vacuum pump 33, and the opening degree of the automatic pressure control valve (APC) 32 is adjusted during the plasma processing, and the inside of the processing chamber 4 is set and maintained in a predetermined vacuum environment. The exhaust system is configured by the exhaust pipe 31, the automatic pressure control valve (APC) 32, and the vacuum pump 33. Further, the number or position of the exhaust ports 30 is appropriately set in accordance with the size of the device. For example, as shown in the horizontal cross-sectional view of FIG. 3, the exhaust port 30 may be provided at four corners of the bottom portion 4b of the processing chamber 4.

A cooling space (not shown) is formed on the back side of the substrate G placed on the mounting table 23, and a He gas flow path 35 for supplying He gas as a heat transfer gas having a constant pressure is provided. In this manner, by supplying the heat transfer gas to the back side of the substrate G, the temperature rise or the temperature change of the substrate G can be avoided under vacuum.

Further, the plasma processing apparatus includes a control unit 100 including a microprocessor (computer), a user interface 101, and a memory unit 102. The control unit 100 can control the components of the plasma processing apparatus, such as valves, high-frequency power supplies, vacuum pumps, and the like, to control the components. Moreover, the user interface 101 has a keyboard, a display, etc., and is connected. In the control unit 100, the keyboard is provided with an input operation for inputting a command or the like for managing the plasma processing apparatus, and the display visually displays the operation state of the plasma processing apparatus. The memory unit 102 stores a control program for realizing various processes performed in the plasma processing device by the control of the control unit 100, or for causing each component of the plasma processing device to perform processing in response to the processing conditions. The program also processes the recipe and is connected to the control unit 100. The recipe is processed and stored in the memory medium in the memory unit 102. The memory medium can also be a hard disk or a semiconductor memory built in a computer, or can be a portable person such as a CDROM, a DVD, or a flash memory. Also, the recipe can be appropriately transferred from other devices, for example, via a dedicated return line. Further, in response to an instruction from the user interface 101, an arbitrary processing recipe is called from the memory unit 102, and the control unit 100 executes the recipe, whereby plasma is controlled under the control of the control unit 100. The desired processing in the processing device.

Next, a description will be given of a processing operation when a plasma treatment such as plasma etching or plasma ashing is applied to the substrate G by using the plasma processing apparatus configured as described above.

First, in a state where the gate valve 27 is opened, the substrate G is carried into the processing chamber 4 from the loading/unloading port 27a by a transport mechanism (not shown), and is placed on the mounting surface of the mounting table 23, and is electrostatically charged. A chuck (not shown) is used to fix the substrate G to the mounting table 23. Next, the processing gas is supplied from the processing gas supply system 20 to the processing chamber 4 via the gas discharge hole 12a of the shower head housing 11, and the pressure is controlled by the automatic pressure control valve (APC) 32. Air port 30 The inside of the processing chamber 4 is evacuated by the evacuation pipe 31 by the vacuum pump 33, whereby the processing chamber is maintained at a pressure environment of, for example, about 0.66 to 26.6 Pa.

In this case, the cooling space on the back side of the substrate G is supplied with He gas as a heat transfer gas via the He gas flow path 35 in order to avoid temperature rise or temperature change of the substrate G.

Next, a high frequency of, for example, 13.56 MHz is applied from the high-frequency power source 15 to the high-frequency antenna 13, whereby a uniform induced electric field is formed in the processing chamber 4 via the dielectric wall 2. By the induced electric field formed as described above, the processing gas is plasmatized in the processing chamber 4 to generate a high-density inductively coupled plasma. The substrate G is subjected to a plasma treatment by the plasma, for example, plasma etching or plasma ashing of a predetermined film of the substrate G. At this time, high-frequency power, for example, a frequency of 6 MHz, which is a bias high-frequency power, is applied from the high-frequency power source 29 to the mounting table 23, so that ions in the plasma generated in the processing chamber 4 are efficiently introduced to the substrate. G.

The processing gas is plasma-treated in the processing region 41 in the processing chamber 4 and supplied to the plasma treatment, and then sucked by the vacuum pump 33, whereby the partition formed between the adjacent partition members 50 is separated. The space 60 is exhausted from the exhaust port 30 via the exhaust pipe 31 until the exhaust region 42 is reached.

In the related art, a technique is known in which a separator for securing a gas passage is provided by an opening such as a punch or a slit, and the plasma discharge is prevented from reaching the opening through the opening. Exhaust area. However, as in the case of plasma processing of large substrates, on the mounting table After the high-frequency high-frequency power is applied, when the separator is grounded, there is a possibility that glow discharge occurs in the punch formed in the separator, or the glow discharge moves back and forth, and the plasma becomes unstable. In other words, in the processing of the large substrate, when the separator is not grounded, it is impossible to effectively prevent the plasma from entering the exhaust region through the opening, and as a result, problems such as the following occur: This causes discharge to the exhaust path or the like, and even when the separator is grounded, glow discharge occurs in the punching.

Therefore, in order to prevent plasma from intruding into the exhaust region and generating glow discharge in the punching hole, it is attempted to provide a plate-shaped partition member having no opening portion instead of the separator, and the partition plate is electrically floated. State (floating potential). Therefore, it has been confirmed that the high-frequency power for biasing is effective up to a certain extent. However, when the substrate is increased in size and the high-frequency power for biasing is gradually increased, the plasma cannot be sufficiently prevented from entering the row. In the gas region, there is a case where an arc occurs in a member provided in an exhaust path of an automatic pressure control valve (APC) or the like. In view of the results of the investigation, it is considered that in the case of the inductively coupled plasma processing apparatus, the area of the counter electrode to which the electrode for applying high-frequency power for bias is applied is small.

Therefore, as a result of further review, it is concluded that it is effective to provide a plurality of plate-shaped partition members having no openings in place of the separators and to connect the partition members to the ground potential. In other words, it has been found that the partition member has a function of a counter electrode for biasing high-frequency power by grounding the partition member, and discharge (arc) of an automatic pressure control valve (APC) or the like is suppressed. Moreover, even if the partition member having no opening portion is grounded, it is difficult to cause a glow like a partition. Electricity.

Therefore, in the present embodiment, a plurality of partition members 50 having no openings are provided in the position between the inner wall (the inner portion of the side wall 4a) of the processing chamber 4 in which the partition is conventionally provided and the mounting table 23. Further, the grounding member is disposed between the partition members 50 so as to be spaced apart from each other so as to form the partition 60 reaching the exhaust region 42. By this means, even if high-frequency bias high-frequency power is applied to the mounting table 23, it is possible to suppress the occurrence of glow discharge in the vicinity of the partition member 50, and it is possible to suppress the plasma from entering the exhaust region 42 and to be placed in the automatic pressure control. Discharge (arc) of components of the exhaust path of a valve (APC) or the like. Further, by suppressing the undesired discharge in this manner, the entire plasma generated in the processing region 41 can be stabilized.

In addition, a separator having an opening such as a conventional punching or slit is a technique developed for the purpose of uniformly exhausting the peripheral portion of the substrate in a semiconductor processing apparatus or the like that processes a circular substrate. In the rectangular processing chamber that processes the rectangular substrate, it is preferable to exhaust the air from the peripheral portion evenly from the peripheral portion, and it is preferable to guide the airflow to the four corners of the processing chamber and exhaust the air from the four corners. Therefore, in the processing apparatus for processing a rectangular substrate, it is also known from this viewpoint that a configuration in which a partition for exhaust gas is provided at four corners is preferable by a partition member having no opening.

Next, other embodiments of the present invention will be described. Figure 4 is a vertical sectional view showing a plasma processing apparatus according to another embodiment of the present invention; and Figure 5 is a plasma processing apparatus showing another embodiment of the present invention. Horizontal cross-sectional view; Fig. 6 is a perspective view showing the positional relationship between the partition member and the shielding member of the plasma processing apparatus. The plasma processing apparatus is the same as the conventional embodiment except that the shielding member 52 is provided at a position below the compartment 60 formed between the adjacent partition members 50.

Specifically, the shielding member 52 is composed of a plate material (which is made of a conductive material such as metal), and is disposed on the inner wall of the processing chamber 4 (the inner portion of the side wall 4a) and the load. Four corners between the stages 23 are placed and the lower position of the partition member 50 is placed. The shield member 52 is disposed such that at least a portion thereof overlaps with the partition member 50 in a plan view, and the partition 60 can be shielded. Further, the shielding member 52 is connected to the ground potential by the ground line 52a. Further, the shielding member 52 may be grounded via the body container 1 or the partition member 50.

In this way, a grounded shielding member 52 is provided at a position below the partition member 50 so as to shield the compartment 60, whereby the exhaust path can be shielded from the plasma existing in the processing region 41, and The discharge (arc) of the member provided in the exhaust path of the automatic pressure control valve (APC) or the like is surely suppressed. Thereby, the stability of the entire plasma generated in the processing region 41 can be further improved.

Further, the shielding member 52 can provide a certain degree of shielding effect even if only a part of the compartment 60 is not completely shielded from the compartment 60. Further, the shielding member 52 may be provided at a position higher than the height of the partition member 50, or may be provided at a position above the partition member 50.

Next, an experimental example will be described.

Here, the inductively coupled plasma processing apparatus provided with the partition member is used to change the power (bias power) of the bias high frequency power, and to grasp the automatic pressure control valve (APC) when O ₂ ashing is performed. Whether an arc has occurred. Here, a person who is provided with a floating member, a partition member provided with a ground (an embodiment shown in FIGS. 1 and 2), and a grounded partition member are provided with a grounded shield member ( In the embodiment shown in FIG. 4 and FIG. 5, the plasma processing apparatus is used as a plasma processing apparatus, and the high-frequency electric power for plasma generation is set to a flow rate of O ₂ gas: 1000 sccm and a pressure of 20 mTorr. 40 kW was used for the experiment.

As a result, as shown in Fig. 7, it was confirmed that when the partition member was in a floating state, when the bias power reached 30 kW, an arc occurred in the automatic pressure control valve (APC), and by this, the separation was performed. The method of grounding the component does not cause arcing in the automatic pressure control valve (APC) even if the bias power is 40 kW. Further, it was confirmed that after the grounding partition member was provided, the grounded shielding member was provided, whereby the arc was not generated in the automatic pressure control valve (APC) even when the bias power was 50 kW.

Further, the present invention is not limited to the above embodiment, and various modifications can be made. For example, in the above-described embodiment, the present invention is particularly applicable to an inductively coupled plasma processing apparatus in which the area of the counter electrode to which the electrode for bias high frequency power is applied is small, but Not limited to this, even in a plasma processing apparatus using microwaves, The present invention can be applied in the same manner and effectively, and can also be applied to a capacitive coupling type (parallel plate type) plasma processing apparatus in which the area of the counter electrode to which the electrode for bias high frequency power is applied is relatively large.

Further, in the above-described embodiment, the inductively coupled plasma processing apparatus is provided with a high frequency antenna via a dielectric window in the upper portion of the processing chamber, but it may be applied to a dielectric window. And a case where a high frequency antenna is provided via a metal window. In this case, the supply of the processing gas may be provided by a gas shower head in the metal window, and may not be supplied from a cross-shaped shower head frame such as a beam structure.

Further, in the above embodiment, the present invention is applied to a device for performing plasma etching or plasma ashing, but it can also be applied to other plasma processing apparatuses such as CVD film formation. Further, in the above-described embodiment, an example in which a rectangular substrate for FPD is used as a substrate is used, but it may be applied to a case where another rectangular substrate is processed, or is not limited to a rectangular shape, and may be applied to a circle such as a semiconductor wafer. Shaped substrate. Further, in the above-described embodiment, the example in which the partition between the adjacent partition members is formed at four corners of the processing chamber is not limited thereto, and in order to optimize the airflow in accordance with the contents of the substrate processing, It can also be applied to the case where compartments are placed outside of four corners. Further, the shape of the partition member is not limited to a rectangular shape. For example, when the substrate is circular and the processing chamber or the mounting table is circular, it may be formed in an arc shape.

1‧‧‧ body container

23‧‧‧ mounting table

27‧‧‧ gate valve

27a‧‧‧ Move in and out

30‧‧‧Exhaust port

50‧‧‧Parts

50a‧‧‧ Grounding wire

60‧‧‧ Compartment

G‧‧‧Substrate

Claims (16)

A plasma processing apparatus characterized by comprising: a processing chamber for accommodating a substrate and applying a plasma treatment; the mounting table having a mounting surface on which the substrate is placed in the processing chamber; and a processing gas supply system for supplying the processing chamber a gas; an exhaust system that exhausts the processing chamber; a plasma generating mechanism that generates a plasma for plasma-treating the substrate placed on the mounting table; and a high-frequency power source for applying to the mounting table a bias high frequency power; and a plurality of partition members disposed at a position below the mounting surface, and dividing the processing chamber into a processing region for plasma-treating the substrate and an exhaust region communicating with the exhaust system And consisting of a conductive material without an opening, the plurality of partition members are connected to a ground potential, and adjacent partition members are disposed therebetween to form a process to be supplied to the processing region The manner in which the gas is guided to the compartment of the exhaust region is arranged at intervals. A plasma processing apparatus according to the first aspect of the invention, further comprising a shielding member at a height position different from the partition member, wherein the shielding member is disposed to shield at least a part of the compartment in a plan view It is made of a conductive material and does not have an opening and is connected to a ground potential. A plasma processing apparatus according to item 2 of the patent application, wherein The shielding member is provided at a position below the partition member. The plasma processing apparatus according to claim 2, wherein the shielding member is provided to shield all of the compartments in a plan view. The plasma processing apparatus according to claim 2, wherein the partition member is provided between an inner wall of the processing chamber and a side wall of the mounting table facing the mounting chamber. The plasma processing apparatus according to claim 5, wherein the processing chamber has a rectangular shape in a planar shape, and the mounting table has a rectangular shape in plan view, and the partitioning member corresponds to the mounting table. Each of the side walls is provided, and the compartment is formed in a corner portion of the rectangular space. The plasma processing apparatus of claim 2, wherein the plasma generating mechanism has a high frequency antenna for generating inductively coupled plasma in the processing region. The plasma processing apparatus according to claim 7, wherein the high frequency antenna is provided in an upper portion of the processing chamber via a dielectric window. The plasma processing apparatus according to claim 7, wherein the high frequency antenna is provided on an upper portion of the processing chamber via a metal window. An exhaust structure having a processing chamber (a substrate is placed and plasma treatment is applied), a mounting table (having a mounting surface on which the substrate is placed in the processing chamber), and a processing gas supply system (a processing gas is supplied to the processing chamber) An exhaust system (exhausting the processing chamber), a plasma generating mechanism (generating a plasma for plasma treatment of a substrate placed on the mounting table), and a high frequency power supply (for In the plasma processing apparatus for placing the bias high frequency power, the processing gas supplied to the processing chamber is guided to the exhaust system, and the exhaust structure has a plurality of partition members provided on the plurality of partition members. The processing chamber is partitioned into a processing region for plasma-treating the substrate and an exhaust region communicating with the exhaust system, and is formed of a conductive material without an opening portion. a plurality of partition members connected to a ground potential, and adjacent partition members are disposed therebetween to guide a process gas supplied to the processing region to the exhaust region Between the way, to be spaced. The exhaust structure of claim 10, further comprising a shielding member at a height position different from the partition member, wherein the shielding member is disposed to shield at least a portion of the compartment in a plan view, It is made of a conductive material and does not have an opening and is connected to a ground potential. The exhaust structure of claim 11, wherein the shielding member is disposed at a position below the partition member. The exhaust structure of claim 11 or 12, wherein the shielding member is provided to shield all of the compartments in a plan view. The exhaust structure of claim 11 or 12, wherein the partition member is disposed between an inner wall of the processing chamber and a side wall of the mounting table opposite thereto. The exhaust structure of claim 14, wherein the processing chamber has a rectangular shape in a planar shape, the mounting table has a rectangular shape in plan view, and the partition member corresponds to the mounting table. Each of the side walls is provided, and the compartment is formed in a corner portion of the rectangular space. The exhaust structure of claim 11 or 12, wherein the plasma generating mechanism has a high frequency antenna for generating inductively coupled plasma in the processing region.