CN103187234A - Adjustable constraint device used for plasma processing device - Google Patents
Adjustable constraint device used for plasma processing device Download PDFInfo
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- CN103187234A CN103187234A CN2011104572167A CN201110457216A CN103187234A CN 103187234 A CN103187234 A CN 103187234A CN 2011104572167 A CN2011104572167 A CN 2011104572167A CN 201110457216 A CN201110457216 A CN 201110457216A CN 103187234 A CN103187234 A CN 103187234A
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Abstract
The invention discloses an adjustable plasma constraint device applied to a plasma processing device, wherein the plasma constraint device is arranged between a processing area and an exhaust area, and comprises electric grounding elements, conducting elements and spacing elements. The conducting elements are arranged on the electric grounding elements, the conducting elements and the electric grounding elements are mutually insulated, and a plurality of exhaust channels are arranged on the conducting elements. Each spacing element is arranged between the electric grounding element and the conducting element, wherein the spacing elements are made of insulation materials. According to the adjustable plasma constraint device applied to the plasma processing device, the asymmetry of the plasma processing area can be improved, and processing non-uniformity of substrates is further improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of adjustable saving bundle device for plasma processing apparatus.
Background technology
Plasma processing apparatus utilizes the operation principle of vacuum reaction chamber to carry out the processing of the substrate of semiconductor chip and plasma flat-plate.The operation principle of vacuum reaction chamber is to feed the reacting gas that contains suitable etching agent or deposit source gas in vacuum reaction chamber, and then this vacuum reaction chamber carried out radio-frequency (RF) energy input, with activated reactive gas, light and keep plasma, so that respectively the material layer on the etching substrate surface or on substrate surface depositing layer of material, and then semiconductor chip and plasma flat processed.For instance, the capacitive plasma reactor has been widely used for processing semiconductor substrate and display plate, in the capacitive plasma reactor, when radio-frequency power is applied to two electrodes one or both of, just between the pair of parallel electrode, form capacitive discharge.
Plasma is diffusible, though most of plasma is known from experience in the processing region that rests between the pair of electrodes, the part plasma may be full of whole operating room.For instance, plasma may be full of the zone of the processing region outside of vacuum reaction chamber below.If plasma arrives these zones, then burn into deposit or erosion may take place in these zones thereupon, this can cause the particle of reative cell inside to stain, and then reduces the repeat performance of plasma treatment appts, and may shorten the working life of reative cell or reative cell parts.If not with plasma confinement in certain working region, charged particle will clash into not protected zone, and then cause surface of semiconductor chip impurity and pollution.
Thus, generally also in plasma processing apparatus, be provided with restraint device (confinementring) in the industry, in order to the discharge of the reacting gas use of control and when the charged particle in the reacting gas passes through this plasma restraint device with they charge neutrality, substantially constrain in the processing region thereby will discharge, with the cavity pollution problem that prevents to cause in the plasma treatment appts use.
Yet, those skilled in the art are to be understood that, plasma process zone in the plasma processing apparatus can produce inhomogeneous phenomenon, and the inhomogeneous processing procedure inhomogeneity that will further cause substrate of process zone, as everyone knows, the inhomogeneity of substrate processing procedure is the core technology problem that this area need solve, and the present invention just is being based on this proposition.
Summary of the invention
At the problems referred to above in the background technology, the present invention proposes a kind of plasma regulated restraint device that is applied to plasma processing apparatus.
First aspect present invention provides a kind of plasma regulated restraint device that is applied to plasma processing apparatus, wherein, described plasma treatment appts comprises plasma processing district and exhaust area, described plasma restraint device is between the plasma processing district and exhaust area of described plasma treatment appts, having a plurality of gas passages flows through gas from the processing procedure district to be neutralized when described plasma restraint device enters exhaust area, described plasma restraint device is arranged between described processing procedure district and the exhaust area, wherein: described plasma restraint device comprises:
The electrical grounding element;
Conducting element, described conducting element are positioned at described electrical grounding element top, and the two electrically insulated from one another, and described conducting element is provided with several exhaust passages;
Spacer element, described spacer element are arranged between described electrical grounding element and the described conducting element, and wherein, described spacer element is made by insulating material.
Further, lower surface at described conducting element is provided with one deck first electric insulation layer, upper surface at described electrical grounding element is provided with one deck second electric insulation layer, and wherein, described first electric insulation layer is positioned on described second electric insulation layer.
Wherein, described spacer element is arranged at the mounting points between described electrical grounding element and the described conducting element, and described mounting points reaches zone greater than 10% corresponding to the plasma density of described confinement ring top less than other parts of described confinement ring top.
Alternatively, described mounting points is positioned at the side away from described earth element.
Alternatively, described mounting points is positioned at top electrode and the bigger side of bottom electrode distance of described plasma processing apparatus.
Alternatively, described mounting points is positioned at a side of the cavity depression of described plasma processing apparatus.
Alternatively, described mounting points is positioned at the side away from the vacuum pump of plasma processing apparatus.
Further, the area of described spacer element reaches at least and can partly cover described first electric insulation layer and second electric insulation layer.
Further, the span of the thickness of described spacer element is less than 90 microns.
Second aspect present invention provides a kind of plasma processing apparatus, and wherein, described plasma processing apparatus comprises the described plasm restraint device of regulating of first aspect present invention
Adjustable saving bundle device provided by the invention and comprise that the plasma device of this adjustable saving bundle device can improve the asymmetric problem of process zone, and further improve the processing procedure homogeneity problem of substrate.
Description of drawings
Fig. 1 is the structural representation that does not adopt plasma processing apparatus of the present invention;
Fig. 2 is the structural representation that is applied to plasma processing apparatus of a specific embodiment of the present invention;
Fig. 3 be a specific embodiment of the present invention plasma processing apparatus adjustable saving bundle device look up the details enlarged drawing;
Fig. 4 is the details enlarged drawing of adjustable saving bundle device of the plasma processing apparatus of a specific embodiment of the present invention;
Fig. 5 is the structural representation of the plasma processing apparatus of a specific embodiment of the present invention;
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
Technological invention mechanism of the present invention is by in the lower part of processing region ionic medium bulk concentration, between corresponding electrical equipment earth element and the conducting element at least one spacer element is set, in order to limit the sheath layer (sheath) that produces herein, improve the asymmetry in plasma treatment zone, make herein the substrate processing procedure and other regional homogeneity of substrate be guaranteed.
Fig. 1 shows the process zone of using in the present invention's plasma processing apparatus before, as shown in Figure 1, since its illustratively on the right side of diagram chamber directly or not directly with restraint device ground connection, the process zone A on (illustrated plasma processing apparatus right side) " has been dragged " higherly near this ground connection place, does not have opposite side (on the left of the illustrated plasma processing apparatus) plasma density of this chamber of earth terminal lower.Thus, substrate W pending in the feasible diagram reduces in the marginal portion of earth terminal one side processing procedure speed, and higher relatively in the processing procedure speed of opposite side, the substrate W of processing procedure gained will inevitably produce the defective of homogeneity.
See also Fig. 2, Fig. 2 shows the structural representation that is applied to plasma processing apparatus of a specific embodiment of the present invention.Plasma processing apparatus 1 as shown in the figure has a process chambers 10, and process chambers 10 is essentially cylindricality, and process chambers sidewall perpendicular, has the top electrode 11 and the bottom electrode 13 that are arranged in parallel in the process chambers 10.Usually, the zone between top electrode 11 and bottom electrode 13 is processing region B, and this zone B will form high-frequency energy to light and to keep plasma.Place substrate W to be processed above bottom electrode 13, this substrate W can be the glass plate of waiting to want the semiconductor chip of etching or processing or treating to be processed into flat-panel monitor.Reacting gas is input in the process chambers 10 from gas source 12, one or more radio-frequency power supplies 14 can be applied on the bottom electrode 13 individually or be applied to respectively simultaneously on top electrode 11 and the bottom electrode 13, in order to radio-frequency power is transported on the bottom electrode 13 or top electrode 11 and bottom electrode 13 on, thereby produce big electric field in that process chambers 10 is inner.Most of electric field lines are comprised in the processing region A between top electrode 11 and the bottom electrode 13, and this electric field accelerates the electronics that is present in process chambers 11 inside on a small quantity, makes it the gas molecule collision with the reacting gas of importing.These collisions cause the ionization of reacting gas and exciting of plasma, thereby produce plasma in process chambers 10.The neutral gas molecule of reacting gas has lost electronics when standing these highfields, stay the ion of positively charged.The ion of positively charged accelerates towards bottom electrode 13 directions, is combined with the neutral substance in the processed substrate, excites substrate processing, i.e. etching, deposit etc.Certain suitable position at plasma processing apparatus 1 is provided with exhaust gas region, and exhaust gas region is connected with external exhaust apparatus (for example the vacuum pump pump 15), in order to will extract processing region B out with the reacting gas of crossing and bi-product gas in processing procedure.
In an application scenarios, owing near the right side cavity of as shown in Figure 1 plasma processing apparatus, restraint device is connected in earth terminal 17, then plasma process zone A " has been dragged " above the restraint device on right side, from the space, plasma process zone A presents asymmetric cloud form, particularly, be connected with near the restraint device of earth terminal, its process zone is by " picking-up ", and near the restraint device away from earth terminal, its processing procedure district extends to the substrate below always.Therefore, the plasma density of the substrate region Wa of this location is lower.Relatively, the plasma density of the opposite side corresponding region Wb on substrate W horizontal direction is higher.
Fig. 3 illustrate a specific embodiment of the present invention plasma processing apparatus adjustable saving bundle device look up the details enlarged drawing.With reference to Fig. 3 in conjunction with Fig. 2, according to a specific embodiment of the present invention.First aspect present invention provides a kind of plasma regulated restraint device that is applied to plasma processing apparatus, wherein, described plasma treatment appts 1 comprises plasma processing district B and exhaust area P, described plasma restraint device is between the plasma processing district B and exhaust area P of described plasma treatment appts 1, having a plurality of gas passages flows through gas from the processing procedure district to be neutralized when described plasma restraint device 1 enters exhaust area P, described plasma restraint device 1 is arranged between described processing procedure district B and the exhaust area P, wherein, described plasma restraint device comprises:
Conducting element 16, described conducting element 16 is positioned at described electrical grounding element 18 tops, and the two electrically insulated from one another, described conducting element 16 is provided with several exhaust passages, and the reacting gas of using and the bi-product gas that are beneficial in the described processing region B are passed through this passage.Wherein, comprise charged particle and neutral particle in the plasma, the size of described passage is configured to charged particle is neutralized when the charged particle in the plasma during by described passage, allows neutral particle to pass through simultaneously.Wherein, conducting element 16 exemplarily comprises integrally formed conductive supporting ring and several conductive concentric rings.
Wherein, in order to realize described conducting element 16 and electrical grounding element 18 the two electrically insulated from one another, can between the contact-making surface of conducting element 16 and electrical grounding element 18, be respectively provided to few one deck one electric insulation layer (insulative layer) 16a/18a.At least a portion of described electric insulation layer 16a/18a and electrical grounding element 18 or conducting element 16 is at least part of or whole covering relation, so that conducting element 16 and electrical grounding element 18 electric insulation each other.Described electric insulation layer can be monolayer insulating layer, also can be the multilayer dielectric layer that forms with different process or same process, to realize better insulation effect.Wherein, electric insulation layer 18a is arranged on the upper surface of electrical grounding element 18, the second electric insulation layer 16a be arranged on the conducting element 16 lower surface.
Wherein, plasm restraint device provided by the invention is the floating ground of electricity (electrically floated fromthe ground).Particularly, conducting element 16 all is to be formed by electric conducting material with electrical grounding element 18, and between also is provided with electric insulation layer 16a/18a.Therefore, formed an equivalent capacity between conducting element 16, electrical grounding element 18 and the electric insulation layer 16a/18a, wherein, the upper/lower electrode of described equivalent capacity is served as by conducting element 16 and electrical grounding element 18 respectively, and dielectric is wherein served as by electric insulation layer 16a/18a.Wherein, described electrical grounding element 18 also is connected in earth terminal 17 further, and the current potential of described earth terminal 17 is 0.Conducting element 16 between the current potential of plasma and earth terminal, by the floating ground of electricity then.
In the present embodiment, plasm restraint device also comprises spacer element 19, and described spacer element 19 is arranged between described electrical grounding element 18 and the described conducting element 16, and wherein, described spacer element 19 is made by insulating material.Then, according to the fundamental formular of electric capacity:
C=ε S/4 π kd, wherein, ε is dielectric constant, d is distance.
Referring to Fig. 3, because spacer element 19 embeds between electrical grounding element 18 and the described conducting element 16, make the distance of " top electrode " conducting element 16 and " bottom electrode " electrical grounding element 18 become big.According to capacitance equation, be inversely proportional to apart from d and capacitance C, then equivalent capacitance value C diminishes.Again according to the condensance formula:
Xc＝1/ωc
As can be known, equivalent capacitance value diminishes, and then capacitive reactance becomes big, and then shell is just more thick.The sheath layer can provide a power that makes progress to charged ion.Can stop plasma to move down during the existing of sheath layer, just plasma is held up.Therefore, plasma density is lowered, and processing procedure speed is further reduced.
Therefore, referring to Fig. 4, when the plasma density of process zone is asymmetric, plasma density higher/spacer element 19 is set between electrical grounding unit 18 near the processing procedure speed upper zone the restraint device and the conducting element 16, it is inhomogeneous to improve process zone, and further improves the processing procedure homogeneity problem of substrate.Need to prove that the number of spacer element 19 can be adjusted according to concrete processing procedure, and should not be defined in a certain fixed numbers.
Further, described spacer element is arranged at the mounting points between described electrical grounding element and the described conducting element, and described mounting points reaches zone greater than 10% corresponding to the plasma density of described confinement ring top less than other parts of described confinement ring top.
It will be appreciated by those skilled in the art that the plasma process zone in the plasma processing apparatus produces inhomogeneous phenomenon, its origin cause of formation is diversified.
For example, see figures.1.and.2, restraint device also is provided with one sometimes and is connected in earth terminal earth element 17, can suppress the exhaust gas region that the radio-frequency (RF) energy emission arrives described plasma processing apparatus.Yet, because it is comparatively speaking strong than other zones of restraint device to be connected in an end electric field of earth terminal in restraint device, cause plasma density also to be subjected to a certain degree reduction, therefore make near the process zone A (referring to Fig. 1) in restraint device zone asymmetric.From the space, plasma process zone A presents asymmetric cloud form, particularly, be connected with near the restraint device of earth terminal, its process zone A is by " picking-up ", and near the restraint device away from earth terminal, its processing procedure district extends to the substrate below always.Thus, make away near the substrate processing procedure speed the restraint device of earth terminal higherly, and it is lower to be connected with the substrate W processing procedure speed of restraint device near zone of earth terminal, causes the substrate W behind the processing procedure homogeneity defective to occur.Gas reason such as air-flow skewness or monolateral turnover valve hardware such as (slit valve) asymmetric all can cause the asymmetric distribution of plasma.
Therefore, in above-mentioned application scenarios, as shown in Figure 2, described spacer element 19 is arranged at described mounting points between electrical grounding element and conducting element away from the restraint device of described earth element one side.Used adjustable saving beam ring provided by the invention, the asymmetry of plasma process zone B is improved.
In addition, the cavity that it will be appreciated by those skilled in the art that plasma processing apparatus may not be that it must have some asymmetric uniformly.For example, suppose such a case, when sidewall one side of chamber presents recess a little, so, the plasma that the process zone in this territory, lateral areas can be held is more, and concentration is just higher.In like manner, the substrate edge near this side the etch rate condition with higher can occur equally.
Therefore, for overcoming above-mentioned defective, mounting points should be positioned at a side (not shown) of the cavity depression of described plasma processing apparatus.
And for example, not necessarily on a horizontal plane, this may not necessarily wipe feel before processing procedure in actual applications for plasma processing apparatus top electrode or bottom electrode.With reference to Fig. 5, the top electrode 11 ' of diagram plasma processing apparatus tilts slightly towards illustrated plasma processing apparatus right side, then the top electrode 11 ' of this side part and its corresponding bottom electrode 13 shorten apart from d1, and d1 is inevitable less than the top electrode 11 ' of other parts and the distance of its corresponding bottom electrode 13 simultaneously.For example, top electrode 11 ' and its corresponding bottom electrode 13 in diagram left side are inevitable greater than d1 apart from d2.Therefore, because the d1 distance shortens, it is big that its corresponding electric field strength becomes, and plasma accelerates to flow out process zone by described restraint device 16, causes the plasma density of this process zone to reduce.From the space, plasma process zone A (referring to Fig. 1) presents asymmetric cloud form, particularly, near the shortest restraint device of upper/lower electrode distance, its process zone A is by " picking-up ", and near the restraint device that upper/lower electrode is grown apart from d2, its processing procedure district extends to the substrate below always.Therefore, the especially processing procedure speed reduction of substrate edge part Wc of Dui Ying substrate W.In like manner, the processing procedure speed of the substrate opposite side marginal portion Wd corresponding with it is higher.
In order to compensate the inhomogeneity of above-mentioned substrate processing procedure, as shown in Figure 5, described spacer element 19 is arranged at top electrode 11 ' and the bigger side of bottom electrode 13 distances of described plasma processing apparatus 1, also be, apart from d2 one side, in other words, the side of substrate edge Wd.
For another example, the setting of plasma processing apparatus vacuum pump also can cause the asymmetric appearance of plasma supporting zone.Particularly, vacuum pump generally can not be arranged under the chamber of plasma processing apparatus in the prior art, and can be arranged at a side of 1 plasma processing apparatus as shown in Figure 2, and examples shown ground is arranged at the diagram right side with vacuum pump 15.Because vacuum pump 15 is used for will extracting processing region B out with the reacting gas of crossing and bi-product gas in processing procedure, the plasma density that a side is set at vacuum pump 15 must reduce.From the space, plasma process zone A (referring to accompanying drawing 2) presents asymmetric cloud form, particularly, arrange at vacuum pump 15 near the restraint device of a side, its process zone A is by " picking-up ", and near the restraint device that arranges away from vacuum pump 15, its processing procedure district extends to the substrate below always.Therefore, as shown in Figure 2, the lower substrate W of plasma density part particularly the processing procedure speed of substrate edge Wa must reduce, and particularly the processing procedure speed of substrate edge Wb is higher in the substrate W of opposite side part.
Therefore, described spacer element 19 should be arranged at the side away from the vacuum pump 15 of plasma processing apparatus 1, with the inhomogeneity of compensation processing procedure.
Further, the area of described spacer element reaches at least and can partly cover described first electric insulation layer and second electric insulation layer.At interval original paper also can be notched annular, if can obtain that asymmetrically distributed insulating material is placed on electrical grounding element 18 and the conducting element 16 that retrains for plasma between to taste the plasma distribution that produces owing to above-mentioned a variety of causes asymmetric with regard to mending.So original paper can be in whole plasma confinement ring at interval, asymmetric Any shape.The material that the interval original paper also can be selected to have different impedance operators is regulated the inhomogeneous situation of different plasma distribution.
Further, the span of the thickness of described spacer element is less than 90 microns, even the millimeter magnitude.
The present invention also provides a kind of plasma processing apparatus, and wherein, described plasma processing apparatus comprises the plasm restraint device regulated that first aspect present invention provides.
Need to prove that no matter the area of described baffle plate or width value how, its number range should with the width of restraint device and the position is set be that standard is adjusted, so that described baffle plate is applicable to described restraint device.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple modification of the present invention with to substitute all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (11)
1. the plasma regulated restraint device that is applied to plasma processing apparatus, wherein, described plasma treatment appts comprises plasma processing district and exhaust area, described plasma restraint device is between the plasma processing district and exhaust area of described plasma treatment appts, have a plurality of gas passages and gas from the processing procedure district is flow through be neutralized when described plasma restraint device enters exhaust area, it is characterized in that: described plasma restraint device comprises:
The electrical grounding element;
Conducting element, described conducting element are positioned at described electrical grounding element top, and the two electrically insulated from one another, and described conducting element is provided with several gas passages;
Spacer element, described spacer element are arranged between described electrical grounding element and the described conducting element, and wherein, described spacer element is made by insulating material.
2. the plasm restraint device of regulating according to claim 1, it is characterized in that, lower surface at described conducting element is provided with one deck first electric insulation layer, upper surface at described electrical grounding element is provided with one deck second electric insulation layer, wherein, described first electric insulation layer is positioned on described second electric insulation layer.
3. the plasma restraint device of regulating according to claim 2, it is characterized in that, described spacer element is arranged at the mounting points between described electrical grounding element and the described conducting element, and described mounting points reaches zone greater than 10% corresponding to the plasma density of described confinement ring top less than other parts of described confinement ring top.
4. adjustable saving beam ring according to claim 3 is characterized in that, described mounting points is positioned at the side away from described earth element.
5. adjustable saving beam ring according to claim 3 is characterized in that, described mounting points is positioned at top electrode and the bigger side of bottom electrode distance of described plasma processing apparatus.
6. adjustable saving beam ring according to claim 3 is characterized in that, described mounting points is positioned at a side of the cavity depression of described plasma processing apparatus.
7. adjustable saving beam ring according to claim 3 is characterized in that, described mounting points is positioned at the side away from the vacuum pump of plasma processing apparatus.
8. the plasma restraint device of regulating according to claim 3 is characterized in that, the area of described spacer element reaches at least can partly cover described first electric insulation layer and second electric insulation layer.
9. the plasma restraint device of regulating according to claim 8 is characterized in that the span of the thickness of described spacer element is less than 90 microns.
10. a plasma processing apparatus is characterized in that, described plasma processing apparatus comprises each described plasm restraint device of regulating of claim 1 to 9.
11. the plasma regulated restraint device that is applied to plasma processing apparatus, wherein, described plasma treatment appts comprises plasma processing district and exhaust area, described plasma restraint device is between the plasma processing district and exhaust area of described plasma treatment appts, have a plurality of gas passages and gas from the processing procedure district is flow through be neutralized when described plasma restraint device enters exhaust area, it is characterized in that: described plasma restraint device comprises:
The electrical grounding element;
Conducting element, described conducting element are positioned at described electrical grounding element top, and the two electrically insulated from one another, and described conducting element is provided with several gas passages;
Between electrical grounding element and conducting element in the corresponding space, there is the spacer element of being made by insulating material in segment space, make to produce high capacitance coupled zone and low capacitive coupling district between earth element and the conducting element, wherein have stronger equivalent capacity between electrical grounding element and the conducting element in the high capacitance coupled zone.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201110457216.7A CN103187234B (en) | 2011-12-30 | 2011-12-30 | A kind of adjustable constraint device for plasma processing apparatus |
| TW101143729A TW201338012A (en) | 2011-12-30 | 2012-11-22 | Adjustable apparatus for use in plasma processing device |
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| CN201110457216.7A CN103187234B (en) | 2011-12-30 | 2011-12-30 | A kind of adjustable constraint device for plasma processing apparatus |
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| CN103187234B CN103187234B (en) | 2016-03-16 |
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| CN111326391A (en) * | 2018-12-17 | 2020-06-23 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus |
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| CN112687510A (en) * | 2019-10-18 | 2021-04-20 | 中微半导体设备(上海)股份有限公司 | Plasma processor and method for preventing arc damage of confinement ring |
| CN112687510B (en) * | 2019-10-18 | 2023-10-31 | 中微半导体设备(上海)股份有限公司 | Plasma processor and method for preventing arc damage of confinement rings |
| CN112928007A (en) * | 2019-12-06 | 2021-06-08 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and lower electrode assembly for plasma processing apparatus |
| CN112928007B (en) * | 2019-12-06 | 2023-09-12 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and lower electrode assembly for the same |
| CN113130282A (en) * | 2019-12-31 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | Plasma confinement structure, manufacturing method thereof and plasma processing device |
| CN113130282B (en) * | 2019-12-31 | 2023-10-20 | 中微半导体设备(上海)股份有限公司 | Plasma confinement structure, manufacturing method thereof and plasma processing device |
| CN113838730A (en) * | 2020-06-08 | 2021-12-24 | 中微半导体设备(上海)股份有限公司 | Gas shield ring, plasma processing apparatus and method for regulating and controlling polymer distribution |
| CN113838730B (en) * | 2020-06-08 | 2024-05-14 | 中微半导体设备(上海)股份有限公司 | Gas shielding ring, plasma processing device and method for regulating and controlling polymer distribution |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI474366B (en) | 2015-02-21 |
| TW201338012A (en) | 2013-09-16 |
| CN103187234B (en) | 2016-03-16 |
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