CN115050623A - Plasma processing device - Google Patents
Plasma processing device Download PDFInfo
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- CN115050623A CN115050623A CN202110251618.5A CN202110251618A CN115050623A CN 115050623 A CN115050623 A CN 115050623A CN 202110251618 A CN202110251618 A CN 202110251618A CN 115050623 A CN115050623 A CN 115050623A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
Abstract
The invention discloses a plasma processing device, comprising: the vacuum reaction cavity is internally provided with a lower electrode assembly, and the cavity body of the vacuum reaction cavity is provided with an exhaust port for exhausting gas in the vacuum reaction cavity; a plasma confinement device disposed around an outer side of the lower electrode assembly; and the airflow balancing component is arranged between the plasma restraining device and the exhaust port, the airflow balancing component comprises a plurality of baffle plates which are arranged in a staggered manner, and a nonlinear air channel is formed between the baffle plates which are arranged in the staggered manner and is used for prolonging the distance from the gas in the vacuum reaction cavity to the exhaust port through the plasma restraining device. The advantages are that: the device is combined with the plasma restraint device and the airflow balancing assembly, and the airflow walking path is increased through the airflow balancing assembly, so that the gas flow speed between the plasma restraint device and the exhaust port is reduced, the wafer etching effect is favorably regulated and controlled, and the pollution to the surface of the wafer is further avoided.
Description
Technical Field
The invention relates to the field of semiconductor equipment, in particular to a plasma processing device.
Background
In semiconductor wafer processing, wafers or films deposited on wafers are often etched by plasma gases. In the whole wafer processing process, factors such as the uniformity of a plasma environment in the plasma processing device, the cleanliness of the vacuum reaction cavity and the like have great influence on the etching effect of the wafer. During the process, the reaction by-products generated from the wafer may also stay in the vacuum chamber. Generally, a gas extraction device (such as a vacuum pump) is externally connected to the vacuum reaction chamber, and the reaction by-products are timely discharged out of the vacuum reaction chamber through an exhaust port by the gas extraction device.
In the plasma processing device, because the whole system including the processing device is reasonable in structure, the exhaust port of the vacuum reaction chamber is not normally arranged right below the vacuum reaction chamber, but is deviated to one side of the chamber, for example, a set of exhaust system is shared by a dual-chamber system, and waste products generated in the process are exhausted out of the vacuum reaction chamber through the gas extraction device. In the process, because the exhaust port is deviated to one side of the cavity, the air extraction efficiency close to one side of the exhaust port is higher, the residence time of the reaction gas at different positions of the edge of the wafer is unequal, the wafer etching rate is deviated, and the wafer etching is easily uneven. Particularly, in the process of generating more polymers, the condition of the partial edge of the etching rate is more obvious, the polymer close to the gas outlet is more quickly pumped away, and the polymer accumulation on the side far away from the gas outlet blocks the reaction of the reaction gas and the wafer, so that the etching rate close to the gas outlet is higher than that on the side far away from the gas outlet, and the wafer etching effect cannot be ensured.
Disclosure of Invention
The invention aims to provide a plasma processing device, which is characterized in that an airflow balancing component is arranged between a plasma constraining device and an exhaust port, so that the distance from gas in a vacuum reaction cavity to the exhaust port through the plasma constraining device is prolonged, a gas traveling path is increased, a reaction area is positioned at a far end relative to a gas extraction device, the influence of the gas extraction device on the reaction area is weakened, and the etching effect of a wafer is regulated and controlled; on the other hand, the gas flow equalizing assembly further prevents micro particle pollutants of a gas extraction device or other sources from flowing back to the reaction area, and avoids causing pollution on the surface of the wafer.
In order to achieve the purpose, the invention is realized by the following technical scheme:
a plasma processing apparatus, comprising:
the vacuum reaction cavity is internally provided with a lower electrode assembly, and the cavity body of the vacuum reaction cavity is provided with an exhaust port so as to exhaust gas in the vacuum reaction cavity;
a plasma confinement arrangement disposed circumferentially outside the lower electrode assembly;
and the airflow balancing component is arranged between the plasma restraining device and the exhaust port, the airflow balancing component comprises a plurality of baffle plates which are arranged in a staggered manner, and a nonlinear air passage channel is formed between the baffle plates which are arranged in the staggered manner and is used for prolonging the distance from the gas in the vacuum reaction cavity to the exhaust port through the plasma restraining device.
Optionally, the airflow balancing assembly comprises:
an inner wall disposed around an outer side of the lower electrode assembly;
the outer wall is arranged on the outer side of the inner wall in a surrounding mode and is connected with the inner wall;
each partition plate is arranged between the inner wall and the outer wall, the partition plates are first partition plates or second partition plates, the first partition plates are connected with the inner wall, the second partition plates are connected with the outer wall, and the first partition plates and the second partition plates are arranged in a staggered mode;
and the inner wall and/or the outer wall and/or the first partition plate and/or the second partition plate are/is provided with airflow holes for gas circulation.
Optionally, the bottom of the outer wall is connected with the bottom of the inner wall through a bottom plate;
or the outer wall is connected with the inner wall through a plurality of connecting rods.
Optionally, the airflow balancing assembly further comprises:
the supporting legs are arranged at the bottom of the airflow balancing assembly to support the airflow balancing assembly.
Optionally, the air flow equalizing assembly includes a first area and a second area, and the distance from the first area to the air outlet is smaller than the distance from the second area to the air outlet.
Optionally, the gas flow rate in the first region is less than the gas flow rate in the second region.
Optionally, the staggered overlapping range of the partition plates in the first area is greater than the staggered overlapping range of the partition plates in the second area, so that the air passage channels formed between the partition plates in the first area are greater than the air passage channels in the second area.
Optionally, the number of the partition plates located in the first area is greater than that of the partition plates located in the second area, and the partition plates are provided with airflow holes for facilitating gas circulation.
Optionally, the edge of the partition board located in the first area is in an upward inclined state or a horizontal state, and the edge of the partition board located in the second area is in a horizontal state or a downward inclined state.
Optionally, the airflow equalizing assembly is provided with a plurality of airflow holes, and the number of the airflow holes of the first area is smaller than that of the airflow holes of the second area.
Optionally, the circumferential extent of the second region is greater than or equal to the circumferential extent of the first region.
Optionally, the circumferential range of the first region is 30 ° to 120 °.
Optionally, the partition plates are arranged in parallel;
and/or each of the partition portions may be arranged in parallel.
Optionally, the material of the gas flow equalizing component comprises an aluminum alloy or engineering plastic or stainless steel;
and/or the surface of the airflow equalizing component is provided with a corrosion-resistant material coating.
Optionally, the corrosion-resistant material coating is a teflon coating or an yttria film layer or an anodic oxide layer.
Compared with the prior art, the invention has the following advantages:
the invention provides a plasma processing device, which combines structures such as a plasma restraining device, an exhaust port and an airflow balancing component, wherein the airflow balancing component is arranged between the plasma restraining device and the exhaust port, the airflow balancing component comprises a plurality of baffle plates which are arranged in a staggered manner, and a nonlinear gas path channel is formed between the baffle plates which are arranged in the staggered manner so as to prolong the distance from gas in a vacuum reaction cavity to the exhaust port through the plasma restraining device and compensate the problem of the circumferential gas pressure edge bias of a reaction area so as to regulate the wafer etching effect; on the other hand, the gas flow equalizing assembly further prevents micro particle pollutants of a gas extraction device or other sources from flowing back to the reaction area, and avoids causing pollution on the surface of the wafer.
Furthermore, the gas flow balancing component comprises a first area and a second area, the distance from the first area to the gas outlet is smaller than the distance from the second area to the gas outlet, the gas flow rate in the first area is smaller than the gas flow rate in the second area, the gas flow rate at the gas outlet is slowed down, the asymmetric effect of a gas extraction device on the reaction area and the cavity environment is relieved, the etching rate of each phase angle of the wafer is balanced, and the wafer edge deviation problem is further effectively solved; the flow rate of the gas flowing out of the first area of the gas flow balancing assembly is close to the flow rate of the gas flowing out of the second area, so that the circumferential gas flow rate of the plasma restraining device is close to stability, the circumferential gas flow rate of a reaction area between the upper electrode assembly and the lower electrode assembly tends to be the same, the uniformity of wafer etching is facilitated, the phenomenon of wafer etching edge deviation cannot be generated, the etching effect of the wafer is guaranteed, and the optimal process symmetry effect is obtained.
Drawings
FIG. 1 is a plasma processing apparatus of the present invention;
FIG. 2 is a partial schematic view of an airflow equalizing assembly according to the present invention;
fig. 3 is a partial schematic view of another gas flow equalization assembly of the present invention.
Detailed Description
In order to facilitate understanding of the features, contents, and advantages of the present invention and the efficacy achieved thereby, the present invention will be described in detail with reference to the accompanying drawings in the form of embodiments, wherein the drawings are provided for illustration and description, and not for the purpose of limiting the invention to the actual scale and precise configuration after the practice of the invention, and the drawings are not to be construed as being limited to the scale and the configuration of the drawings.
It is to be noted that the drawings are in a very simplified form and are all used in a non-precise ratio for the purpose of facilitating and distinctly aiding in the description of the embodiments of the invention.
As shown in fig. 1, a plasma processing apparatus according to the present invention, which is optionally a capacitively-coupled plasma processing apparatus, includes: the vacuum reaction chamber 100 is formed by surrounding a reaction chamber body 101 and a chamber body end cover 102, wherein a wafer transmission port 103 is arranged on the reaction chamber body 101, and the wafer transmission port 103 is used for realizing the transmission of the wafer W between the inside and the outside of the vacuum reaction chamber 100. The vacuum reaction chamber 100 includes a lower electrode assembly 110 disposed at a bottom of the vacuum reaction chamber 100, the lower electrode assembly 110 having a carrying surface on which a wafer W to be processed introduced into the vacuum reaction chamber 100 is placed. The vacuum reaction chamber 100 further includes an upper electrode assembly 120 disposed opposite to the lower electrode assembly 110, and at least one radio frequency power source (not shown) is applied to the lower electrode assembly 110 through a matching network to dissociate the process gas into plasma, so that a plasma environment is formed between the upper electrode assembly 120 and the lower electrode assembly 110, the plasma environment contains a large amount of active particles such as electrons, ions, excited atoms, molecules, and radicals, and the active particles can react with the surface of the wafer W to be processed in various physical and/or chemical reactions, so that the shape of the wafer W to be processed is changed, and the processing of the wafer W to be processed is completed.
Further, an exhaust port 104 is disposed on the cavity of the vacuum reaction chamber 100. In this embodiment, the exhaust port 104 is disposed at the bottom of the vacuum reaction chamber 100, i.e., the bottom of the reaction chamber body 101, and a gas extraction device 130 exhausts the gas inside the vacuum reaction chamber 100, i.e., the reaction waste product, out of the chamber through the exhaust port 104. Alternatively, the gas pumping device 130 may be a molecular pump or a dry pump, and of course, the structure of the gas pumping device 130 is not limited thereto, and it may also be any other device capable of achieving the same gas pumping function.
As shown in fig. 1, the plasma processing apparatus further comprises a plasma confinement device 140, wherein the plasma confinement device 140 is circumferentially disposed outside the lower electrode assembly 110. The plasma confinement device 140 confines plasma in the reaction region between the upper electrode assembly 120 and the lower electrode assembly 110 to prevent the plasma from leaking to the non-reaction region and causing damage to the components of the non-reaction region. Optionally, the plasma confinement device 140 is provided with a plurality of circumferential slots for gas to flow through.
Further, as shown in fig. 1, the plasma processing apparatus further comprises a gas flow equalizing assembly 150, wherein the gas flow equalizing assembly 150 is disposed below the plasma confinement device 140. Specifically, the gas flow equalizing assembly 150 includes a plurality of staggered partitions, and a non-linear gas path is formed between the staggered partitions to extend the distance from the gas in the vacuum reaction chamber 100 to the exhaust port 104 through the plasma confinement device 140. The gas in the reaction region between the upper electrode assembly 120 and the lower electrode assembly 110 flows into the bottom of the vacuum reaction chamber 100 through the circumferential slot of the plasma confinement device 140, the gas flow equalizing assembly 150 is located between the plasma confinement device 140 and the exhaust port 104 and plays a certain role in blocking the gas flow, and the gas flow equalizing assembly 150 keeps the reaction region at a far end relative to the gas extraction device 130, so as to weaken the influence of the gas extraction device 130 on the gas pressure in the reaction region. On the other hand, the gas flow equalizing assembly 150 is disposed between the plasma confinement device 140 and the exhaust port 104, so as to increase shielding between the exhaust port 104 and the wafer W, and prevent some fine particles exhausted from the gas extraction device 130 during the process or the process from flowing back to the wafer W from the exhaust port 104 to cause contamination of the wafer W. Further, particles such as polymers generated in the process are easily attached to the airflow balancing assembly 150, and the airflow balancing assembly 150 is convenient to disassemble and easy to clean, and is helpful for maintaining the environment in the vacuum reaction chamber 100.
In this embodiment, the airflow equalizing assembly 150 may be divided into a first area a and a second area B, where the distance from the first area a to the exhaust port 104 is smaller than the distance from the second area B to the exhaust port 104, i.e., the first area a is close to the exhaust port 104, and the second area B is far from the exhaust port 104. The first area A and the second area B both comprise a plurality of baffle plates which are arranged in a staggered way, so that the walking path of the gas in the reaction area is changed. Gas does not directly flow to the exhaust port 104 from the plasma confinement device 140, but flows to the exhaust port 104 through the first region a and the second region B of the gas flow equalization assembly 150, so that an exhaust path is prolonged, and even if the gas flow rates of the first region a and the second region B are consistent, the gas flow equalization assembly 150 can compensate the gas pressure in the reaction region, further solve the problem of edge deviation of the gas pressure in the reaction region, and ensure the etching effect of the wafer W.
Specifically, the flow equalization assembly 150 includes an inner wall 151 and an outer wall 152. The inner wall 151 is disposed around the outer side of the lower electrode assembly 110, the outer wall 152 is disposed around the outer side of the inner wall 151, the outer wall 152 is connected to the inner wall 151, and the airflow balancing assembly 150 is provided with a plurality of airflow holes for flowing air. Each partition is disposed between the inner wall 151 and the outer wall 152, the partition is a first partition 154 or a second partition 155, the first partition 154 is connected to the inner wall 151, the second partition 155 is connected to the outer wall 152, and optionally, the connections of the first partition 154 and the second partition 155 to the inner wall 151 and the outer wall 152 may be interchanged.
Optionally, the bottom of the outer wall 152 is connected to the bottom of the inner wall 151 through a bottom plate 153. Depending on the application, gas flow holes may be formed in the bottom plate 153 to allow gas to flow from the bottom of the gas flow equalizing assembly 150 to the exhaust port 104 at the bottom of the vacuum reaction chamber 100. It should be noted that the position of the gas flow holes of the gas flow equalizing assembly 150 is not limited to the bottom plate 153, and gas flow holes may be formed on the inner wall 151 and/or the outer wall 152 and/or the first partition 154 and/or the second partition 155 of the gas flow equalizing assembly 150 for gas circulation according to the position of the exhaust port 104, the process requirement or the installation distribution requirement inside the vacuum reaction chamber 100. It should be further noted that the inner wall 151 and the outer wall 152 are not limited to be connected by the bottom plate 153, but may be connected by any other means that can connect the inner wall 151 and the outer wall 152, such as connecting rods connecting the inner wall 151 and the outer wall 152 for air circulation.
In this embodiment, the first partition plates 154 and the second partition plates 155 are staggered to form non-linear air channels, so as to increase the air path. Of course, the arrangement between the first partition plate 154 and the second partition plate 155 is not limited to the arrangement of the first partition plate 154, the second partition plate 155, the first partition plate 154, and the second partition plate 155 … from top to bottom, and may be any arrangement capable of adjusting the gas traveling path, for example, the arrangement of the first partition plate 154, the second partition plate 155, and the first partition plate 154 … from top to bottom (the second partition plate 155 has different lengths).
Further, the gas flow velocity in the first area a is lower than the gas flow velocity in the second area B, that is, the gas flow velocity of the gas flow equalization member 150 near the exhaust port 104 is lower than the gas flow velocity of the gas flow velocity far from the exhaust port 104, so as to achieve the effect of gas flow equalization. Optionally, the circumferential range of the second area B is greater than or equal to the circumferential range of the first area a, for example, the circumferential range of the first area a is 30 ° to 120 °.
Optionally, the first partition plates 154 and the second partition plates 155 in the first area a and the second area B are arranged in parallel, and the staggered overlapping range of the first partition plates 154 and the second partition plates 155 in the first area a is larger than the staggered overlapping range of the first partition plates 154 and the second partition plates 155 in the second area B, so that the gas path channels formed between the partition plates in the first area a are longer than the gas path channels in the second area B, so as to balance the flow rate of the circumferential gas of the plasma confinement device 140, further ensure the balance of the gas flow in the reaction area, ensure the etching effect of the wafer W, avoid the edge deviation phenomenon, and further ensure the etching effect of the wafer W.
In another embodiment, the number of the gas flow holes of the first area a is less than that of the second area B, so as to reduce the aperture of the gas passing through, reduce the gas flow rate of the first area a, equalize the gas pressure in the reaction area, make the etching rate of each phase angle tend to be consistent, and ensure the etching effect of the wafer W.
Depending on the location of the exhaust ports 104, the process requirements, or the installation distribution requirements inside the vacuum reaction chamber 100, gas flow holes may be formed in the inner wall 151 and/or the outer wall 152 and/or the first partition 154 and/or the second partition 155 and/or the bottom plate 153 of the gas flow equalization assembly 150 for gas flow. When the first partition 154 or the second partition 155 has airflow holes, the number of the airflow holes of each partition in the first area a is smaller than that of the airflow holes of each partition in the second area B. Optionally, the positions of the airflow holes of the partition plates in the first area a may be staggered to increase the traveling path of the gas in the first area a and balance and compensate the gas flow rate in the circumferential direction of the reaction area. When the bottom plate 153 is provided with the airflow holes, the opening positions and the number of the airflow holes on the bottom plate 153 can be adjusted according to the positions of the exhaust ports 104, so as to achieve the effect of equalizing the flow rate of the gas flow equalizing assembly 150.
Optionally, the edge of the partition board located in the first area a is in an upward inclined state or a horizontal state, and the edge of the partition board located in the second area B is in a horizontal state or a downward inclined state, so that the gas flow blocking effect in the first area a is better than that in the second area B, which is beneficial to realizing the gas flow balance in the circumferential direction of the wafer W and maintaining a balanced gas environment. Fig. 2 shows a schematic diagram of an arrangement of partitions inside the airflow equalizing assembly 150 in an embodiment (taking the first partition 154 as an example). The baffle plate edge of the first area A is in an upward inclined state, the baffle plate edge of the second area B is in a downward inclined state, gas flows in from the upper part of the gas flow equalizing assembly 150, the baffle plate with the upward inner edge of the first area A further slows down the flow rate of the gas, and the baffle plate with the downward inner edge of the second area B further promotes the circulation of the gas, so that the flow rate of the gas in the first area A is smaller than that in the second area B.
As can be seen from the above description, the gas in the reaction region flows through the first region a and the second region B of the flow equalization member 150 to the exhaust port 104. Because the second region B of the gas flow equalizing assembly 150 is located at a side far away from the gas outlet 104, and the gas flow rate in the first region a is smaller than the gas flow rate in the second region B, the gas travel path in the first region a is extended, which is helpful to reduce the gas flow rate close to the gas outlet 104, so that the asymmetric effect of the gas extraction device 130 on the reaction region and the chamber environment is relieved, and the problem of edge deviation of the wafer W is effectively solved. The flow rate of the gas flowing out of the first region a of the gas flow equalizing assembly 150 approaches to the flow rate of the gas flowing out of the second region B, so that the circumferential gas flow rate of the plasma confinement device 140 approaches to be stable, the circumferential gas flow rate of the reaction region between the upper electrode assembly 120 and the lower electrode assembly 110 tends to be the same, the uniformity of etching the wafer W is facilitated, the phenomenon of edge deviation of the wafer W during etching is not generated, the etching effect of the wafer W is ensured, and the optimal process symmetry effect is obtained.
Of course, the shape and structure of the gas flow equalizer assembly 150 are not limited to the above-mentioned structure, and may be other structures capable of blocking the flow of gas, and the specific structure thereof may be changed according to the installation requirements of other components inside the vacuum reaction chamber 100 or other factors. For example, the gas flow equalizer assembly 150 may further comprise a top plate having gas flow holes, through which the gas remaining from the plasma confinement device 140 flows between the inner wall 151 and the outer wall 152, the top plate having a smaller number of gas flow holes in the first region a than in the second region B to slow the gas flow rate in the first region a, help equalize the gas flow rate in the circumferential direction of the wafer W, and help to improve the uniformity of etching the wafer W.
Further, the airflow equalizing assembly 150 includes a plurality of support legs 156 disposed at the bottom of the bottom plate 153 for supporting the bottom plate 153. The setting position of the support legs 156 can be adjusted according to the placing positions of other parts in the cavity, so that the flexibility of the arrangement in the vacuum reaction chamber 100 is increased, and the internal space in the vacuum reaction chamber 100 is fully utilized. The vacuum reaction chamber 100 has various internal components, and the support legs 156 support the combined part of the inner wall 151 and the outer wall 152, so that other components can be arranged in the lower area according to the process requirements, and the process conditions are more complete.
Of course, the gas flow equalizing assembly 150 may not be provided with the support legs 156, that is, the gas in the reaction region flows to the gas flow equalizing assembly 150 through the plasma confinement device 140, and the gas flows from the bottom of the gas flow equalizing assembly 150 to the exhaust port 104 through the gaps of the components in the vacuum reaction chamber 100, and then is exhausted from the vacuum reaction chamber 100.
Optionally, the material of the gas flow equalizing assembly 150 includes aluminum alloy or engineering plastic or stainless steel, so that the problem of particle pollution generated in the process is avoided. Furthermore, the surface of the airflow balancing assembly 150 is provided with a corrosion-resistant material coating to prevent corrosion of the conveyed gas or plasma on the airflow balancing assembly 150, improve the service life of the airflow balancing assembly 150, and reduce waste of material resources. Optionally, the corrosion-resistant material coating is a teflon coating or an yttria film layer or an anodic oxide layer.
Example two
Based on the structural characteristics of the plasma processing apparatus of the first embodiment, the present embodiment mainly makes some changes to the structure of the gas flow equalizing assembly.
Fig. 3 is a schematic diagram illustrating a partial structure of the gas flow equalizing assembly 250 of the plasma processing apparatus according to the present embodiment. Compared with the first embodiment, in the airflow equalizing assembly 250 of the present embodiment, the number of partitions located in the first area a is greater than the number of partitions located in the second area B, and the partitions are partially arranged in parallel and partially have a gradual trend to achieve the conversion of the number of partitions.
Furthermore, each partition board in the first area a is provided with an airflow hole 255 for facilitating gas circulation, and the opening positions of the airflow holes 255 can be arranged in a staggered manner, so that the gas circulation rate in the first area a is smaller than that in the second area B, the gas circulation rate at the exhaust port is reduced, the pumping rate in each direction around the wafer W is uniform, the uniformity of the etching rate of the wafer W is improved, the etching effect of the wafer W is ensured, and the optimal process symmetry effect is obtained.
As shown in fig. 3, in the present embodiment, the number of the partitions in the first area a is twice that of the partitions in the second area B (fig. 3 illustrates the first partition 254). The gas flow holes 255 of the first partition plate 254 at the first area a are alternately arranged, which can further increase the gas flow path and reduce the gas flow rate, so that the gas flow rate in the first area a is smaller than that in the second area B, thereby ensuring the gas pressure in the reaction area to be balanced, and contributing to improving the uniformity of the etching rate of the wafer W.
In addition, other structures and functions of the components of the present embodiment, such as the upper electrode assembly and the lower electrode assembly, are the same as the components of the first embodiment, and are not repeated herein.
In summary, the present invention provides a plasma processing apparatus, which combines structures of a plasma confinement device 140, an exhaust port 104, and an airflow balance assembly 150, wherein the airflow balance assembly 150 is disposed between the plasma confinement device 140 and the exhaust port 104, the airflow balance assembly 150 includes a plurality of staggered baffles, and a non-linear air channel is formed between the staggered baffles to extend a distance from the gas in the vacuum reaction chamber 100 to the exhaust port 104 through the plasma confinement device 140, and on the other hand, the airflow balance assembly 150 also prevents fine particle contaminants from the gas extraction device 130 or other sources from flowing back to the reaction region, thereby avoiding contamination of the surface of the wafer W.
Further, the gas flow equalizing assembly 150 includes a first area a and a second area B, a distance from the first area a to the gas outlet 104 is smaller than a distance from the second area B to the gas outlet 104, a gas flow rate in the first area a is smaller than a gas flow rate in the second area B, a gas flow rate at the gas outlet 104 is slowed down, an asymmetric effect of the gas extraction device 130 on a reaction area and a chamber environment is relieved, and a wafer W edge bias problem is effectively solved; the flow rate of the gas flowing out of the first region a of the gas flow equalizing assembly 150 approaches to the flow rate of the gas flowing out of the second region B, so that the circumferential gas flow rate of the plasma confinement device 140 approaches to be stable, the circumferential gas flow rate of the reaction region between the upper electrode assembly 120 and the lower electrode assembly 110 tends to be the same, the uniformity of etching the wafer W is facilitated, the phenomenon of edge deviation of the wafer W during etching is not generated, the etching effect of the wafer W is ensured, and the optimal process symmetry effect is obtained.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (15)
1. A plasma processing apparatus, comprising:
the vacuum reaction cavity is internally provided with a lower electrode assembly, and the cavity body of the vacuum reaction cavity is provided with an exhaust port so as to exhaust gas in the vacuum reaction cavity;
a plasma confinement arrangement disposed circumferentially outside the lower electrode assembly;
the gas flow balancing assembly is arranged between the plasma constraining device and the exhaust port, a plurality of baffle plates which are arranged in a staggered mode are arranged in the gas flow balancing assembly, a nonlinear gas path channel is formed between the baffle plates which are arranged in the staggered mode, and the gas flow balancing assembly is used for prolonging the distance from gas in the vacuum reaction cavity to the exhaust port through the plasma constraining device.
2. The plasma processing apparatus of claim 1 wherein the gas flow equalizing assembly comprises:
an inner wall disposed around an outer side of the lower electrode assembly;
the outer wall is arranged on the outer side of the inner wall in a surrounding mode and is connected with the inner wall;
each partition plate is arranged between the inner wall and the outer wall, the partition plates are first partition plates or second partition plates, the first partition plates are connected with the inner wall, the second partition plates are connected with the outer wall, and the first partition plates and the second partition plates are arranged in a staggered mode;
and the inner wall and/or the outer wall and/or the first partition plate and/or the second partition plate are/is provided with airflow holes for gas circulation.
3. The plasma processing apparatus according to claim 2,
the bottom of the outer wall is connected with the bottom of the inner wall through a bottom plate;
or the outer wall is connected with the inner wall through a plurality of connecting rods.
4. The plasma processing apparatus of claim 2 wherein the gas flow equalization assembly further comprises:
the supporting legs are arranged at the bottom of the airflow balancing assembly to support the airflow balancing assembly.
5. The plasma processing apparatus according to claim 1 or 2,
the gas flow equalization assembly includes a first region and a second region, the first region being closer to the exhaust port than the second region.
6. The plasma processing apparatus according to claim 5,
the gas flow rate in the first region is less than the gas flow rate in the second region.
7. The plasma processing apparatus according to claim 6,
the staggered overlapping range of the partition plates in the first area is larger than that of the partition plates in the second area, so that the air passage channels formed between the partition plates in the first area are larger than those in the second area.
8. The plasma processing apparatus according to claim 6,
the number of the partition plates positioned in the first area is larger than that of the partition plates positioned in the second area, and the partition plates are provided with airflow holes for facilitating the circulation of gas.
9. The plasma processing apparatus according to claim 6,
the edge of the partition board positioned in the first area is in an upward inclined state or a horizontal state, and the edge of the partition board positioned in the second area is in a horizontal state or a downward inclined state.
10. The plasma processing apparatus according to claim 6,
the airflow balancing assembly is provided with a plurality of airflow holes, and the number of the airflow holes of the first area is smaller than that of the airflow holes of the second area.
11. The plasma processing apparatus according to claim 5,
the circumferential extent of the second region is greater than or equal to the circumferential extent of the first region.
12. The plasma processing apparatus according to claim 5,
the circumferential range of the first region is 30-120 deg.
13. The plasma processing apparatus according to claim 1,
the partition plates are arranged in parallel with each other;
and/or, the partition plates are arranged in parallel.
14. The plasma processing apparatus according to claim 1,
the material of the airflow equalizing component comprises aluminum alloy or engineering plastic or stainless steel;
and/or the surface of the airflow equalizing component is provided with a corrosion-resistant material coating.
15. The plasma processing apparatus according to claim 14,
the corrosion-resistant material coating is a Teflon coating or an yttrium oxide film layer or an anodic oxide layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110251618.5A CN115050623A (en) | 2021-03-08 | 2021-03-08 | Plasma processing device |
| TW111103169A TWI828046B (en) | 2021-03-08 | 2022-01-25 | Plasma treatment equipment |
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| CN202110251618.5A CN115050623A (en) | 2021-03-08 | 2021-03-08 | Plasma processing device |
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| CN (1) | CN115050623A (en) |
| TW (1) | TWI828046B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116741614A (en) * | 2023-08-15 | 2023-09-12 | 无锡邑文电子科技有限公司 | Etching equipment |
| CN117230431A (en) * | 2023-11-15 | 2023-12-15 | 无锡尚积半导体科技有限公司 | CVD wafer coating equipment |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW510816B (en) * | 1999-07-28 | 2002-11-21 | Applied Materials Inc | Method and apparatus of treating process gas effluent |
| JP5890108B2 (en) * | 2011-04-27 | 2016-03-22 | 株式会社Ｓｃｒｅｅｎホールディングス | Cleaning method |
| CN103187234B (en) * | 2011-12-30 | 2016-03-16 | 中微半导体设备(上海)有限公司 | A kind of adjustable constraint device for plasma processing apparatus |
| SG11201807177VA (en) * | 2016-04-13 | 2018-10-30 | Applied Materials Inc | Apparatus for exhaust cooling |
-
2021
- 2021-03-08 CN CN202110251618.5A patent/CN115050623A/en active Pending
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2022
- 2022-01-25 TW TW111103169A patent/TWI828046B/en active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116741614A (en) * | 2023-08-15 | 2023-09-12 | 无锡邑文电子科技有限公司 | Etching equipment |
| CN116741614B (en) * | 2023-08-15 | 2023-10-31 | 无锡邑文电子科技有限公司 | Etching equipment |
| CN117230431A (en) * | 2023-11-15 | 2023-12-15 | 无锡尚积半导体科技有限公司 | CVD wafer coating equipment |
| CN117230431B (en) * | 2023-11-15 | 2024-03-01 | 无锡尚积半导体科技有限公司 | CVD wafer coating equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI828046B (en) | 2024-01-01 |
| TW202301408A (en) | 2023-01-01 |
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