TWI828046B - Plasma treatment equipment - Google Patents

Abstract

The invention discloses a plasma processing device, which includes: a vacuum reaction chamber, a lower electrode assembly is provided in the vacuum reaction chamber, and an exhaust port is provided in the vacuum reaction chamber to discharge the gas inside the vacuum reaction chamber; a plasma confinement device, It is arranged around the outside of the lower electrode assembly; the air flow balancing assembly is arranged between the plasma confinement device and the exhaust port. The air flow balancing assembly contains a plurality of staggered partitions, and a gap is formed between the staggered partitions. The non-linear gas path is used to extend the distance from the gas in the vacuum reaction chamber to the exhaust port through the plasma confinement device. The advantage is that this device combines the plasma confinement device, the air flow balancing component, etc., increases the gas walking path through the air flow balancing component, slows down the gas flow rate between the plasma confinement device and the exhaust port, and helps to regulate the crystal. The circular etching effect further avoids contamination on the wafer surface.

Description

Plasma treatment equipment

The present invention relates to the technical field of semiconductor equipment, and in particular to a plasma processing device.

During semiconductor wafer processing, plasma gas is often used to etch the wafer or the film deposited on the wafer. During the entire wafer processing process, factors such as the uniformity of the plasma environment in the plasma processing device and the cleanliness of the vacuum reaction chamber have a huge impact on the etching effect of the wafer. During the manufacturing process, reaction by-products generated by the wafer may also stay in the vacuum reaction chamber. Usually, people in the industry generally use a gas extraction device (such as a vacuum pump) connected outside the vacuum reaction chamber, and the gas extraction device can discharge the reaction by-products out of the vacuum reaction chamber in time through an exhaust port.

In the plasma processing device, due to the need to consider the reasonable structure of the entire system including the processing device, the exhaust port of the vacuum reaction chamber is usually not directly below the vacuum reaction chamber, but is biased to one side of the chamber, such as for a dual-chamber system. An exhaust system that extracts waste products generated during the manufacturing process out of the vacuum reaction chamber through a gas extraction device. In this process, since the exhaust port is biased to one side of the cavity, the extraction efficiency on the side close to the exhaust port will be higher. The residence time of the reaction gas at different positions on the edge of the wafer is different, resulting in the wafer etching rate. The edge is biased, which can easily cause uneven etching of the wafer. In particular, in processes that produce a lot of polymers, the etching rate will become more and more skewed. The polymer on the side closer to the exhaust port will be removed faster, while the side farther away from the exhaust port will polymerize. The accumulation of substances blocks the reaction between the reactive gas and the wafer, so the etching rate close to the exhaust port will be higher than the etching rate far away from the exhaust port, and the wafer etching effect cannot be guaranteed.

The object of the present invention is to provide a plasma processing device, which can extend the distance from the gas in the vacuum reaction chamber to the exhaust port through the plasma confinement device by arranging an air flow balancing component between the plasma confinement device and the exhaust port, thereby increasing the The gas walking path places the reaction area at the far end relative to the gas extraction device, weakening the influence of the gas extraction device on the reaction area in order to regulate the wafer etching effect; on the other hand, the air flow balancing component also further prevents gas Micro-particle contaminants from the extraction device or other sources flow back into the reaction area to avoid contamination of the wafer surface.

In order to achieve the above objects, the present invention is achieved through the following technical solutions: A plasma processing device including: A vacuum reaction chamber, the vacuum reaction chamber has a lower electrode assembly, and the vacuum reaction chamber is provided with an exhaust port to discharge the gas inside the vacuum reaction chamber; A plasma confinement device is arranged around the outside of the lower electrode assembly; and An airflow equalization assembly is disposed between the plasma confinement device and the exhaust port. The airflow equalization assembly includes a plurality of staggered partitions, and a non-linear line is formed between the staggered partitions. The gas path is used to extend the distance from the gas in the vacuum reaction chamber to the exhaust port through the plasma confinement device.

Optionally, the airflow balancing component includes: An inner wall is provided around the outside of the lower electrode assembly; and An outer wall is arranged around the outside of the inner wall, and the outer wall is connected to the inner wall; Each of the partitions is disposed between the inner wall and the outer wall. The partition is a first partition or a second partition. The first partition is connected to the inner wall, and the second partition is connected to the inner wall. The partitions are connected to the outer wall, and the first partitions and the second partitions are staggered; Air flow holes are provided on the inner wall and/or the outer wall and/or the first partition and/or the second partition for gas circulation.

Optionally, the bottom of the outer wall and the bottom of the inner wall are connected through a bottom plate; Or, the outer wall and the inner wall are connected through a plurality of connecting rods.

Optionally, the airflow balancing component also includes: A plurality of support legs are provided at the bottom of the air flow balancing component to support the air flow balancing component.

Optionally, the airflow balancing component includes a first area and a second area, and the distance between the first area and the exhaust port is smaller than the distance between the second area and the exhaust port.

Optionally, the gas flow rate in the first area is smaller than the gas flow rate in the second area.

Optionally, the staggered overlap range of the partitions located in the first area is greater than the staggered overlap range of the partitions located in the second area, so that the air path formed between the partitions in the first area is larger than that of the partitions. Describe the air passage in the second area.

Optionally, the number of partitions located in the first area is greater than the number of partitions located in the second area, and air flow holes are provided on the partitions to facilitate gas circulation.

Optionally, the edge of the partition located in the first area is in an upward-inclined state or a horizontal state, and the edge of the partition located in the second area is in a horizontal state or a downward-inclined state.

Optionally, the air flow balancing component is provided with a plurality of air flow holes, and the number of air flow holes in the first area is smaller than the number of air flow holes in the second area.

Optionally, the circumferential range of the second area is greater than or equal to the circumferential range of the first area.

Optionally, the circumferential range of the first area is 30°~120°.

Optionally, each of the partitions is arranged parallel to each other; And/or, each of the partition portions is arranged in parallel.

Optionally, the material of the air flow balancing component includes aluminum alloy, engineering plastic or stainless steel; And/or, the surface of the airflow balancing component is provided with a corrosion-resistant material coating.

Optionally, the corrosion-resistant material coating is a Teflon coating, an yttrium oxide film layer, or an anodized layer.

Compared with the conventional technology, the present invention has the following advantages: The invention provides a plasma processing device that combines structures such as a plasma confinement device, an exhaust port, and an airflow balancing component. The airflow balancing component is disposed between the plasma confinement device and the exhaust port. The air flow balancing component includes a plurality of staggered partitions, and a non-linear gas path is formed between the staggered partitions to extend the passage of gas in the vacuum reaction chamber through the plasma confinement device. The distance to the exhaust port compensates for the gas pressure bias problem in the circumferential direction of the reaction area in order to control the wafer etching effect; on the other hand, the air flow balancing component further prevents gas extraction devices or other sources from Tiny particle contaminants flow back into the reaction area to avoid contamination of the wafer surface.

Further, the air flow balancing component includes a first area and a second area, the distance between the first area and the exhaust port is smaller than the distance between the second area and the exhaust port, and the gas circulation in the first area The rate is smaller than the gas flow rate in the second area, which slows down the gas flow rate at the exhaust port, alleviates the asymmetric effect of the gas extraction device on the reaction area and the cavity environment, and balances the etching rate of each phase angle of the wafer , further effectively solves the problem of wafer edge deflection; the flow rate of the gas flowing out from the first area of the air flow balancing component approaches the flow rate of the gas flowing out from the second area, so that the gas in the circumferential direction of the plasma confinement device The flow rate tends to be stable, and the gas flow rate in the circumferential direction of the reaction area between the upper electrode component and the lower electrode component tends to be the same, which contributes to the uniformity of wafer etching and does not produce the phenomenon of wafer etching edge deviation, ensuring The etching effect of the wafer to obtain the optimal process symmetry effect.

In order to facilitate understanding of the characteristics, contents, advantages and effects achieved by the present invention, the present invention is described in detail below in conjunction with the accompanying drawings and in the form of embodiments. The drawings used are only for illustration. and auxiliary instructions are not necessarily the actual proportions and precise configurations after implementation of the present invention. Therefore, the proportions and configuration relationships of the attached drawings should not be interpreted to limit the scope of rights of the present invention in actual implementation.

It should be noted that the drawings are in a very simplified form and use imprecise ratios, and are only used to conveniently and clearly assist in explaining the embodiments of the present invention.

As shown in Figure 1, it is a plasma processing device of the present invention. It is optionally a capacitively coupled plasma processing device. The plasma processing device includes: a vacuum reaction chamber 100, which is composed of a reaction chamber body 101 and a chamber body. The reaction chamber body 101 is surrounded by a body end cover 102. A wafer transfer port 103 is provided on the reaction chamber body 101. The wafer transfer port 103 is used to transfer the wafer W between the inside and outside of the vacuum reaction chamber 100. The vacuum reaction chamber 100 includes a lower electrode assembly 110, which is disposed at the bottom of the vacuum reaction chamber 100. The lower electrode assembly 110 is provided with a bearing surface for transferring the wafer to be processed into the vacuum reaction chamber 100. Circle W is placed on the bearing surface. The vacuum reaction chamber 100 also includes an upper electrode element 120 arranged opposite to the lower electrode assembly 110. At least one radio frequency power supply (not shown in the figure) is applied to the lower electrode assembly 110 through a matching network to The process gas dissociates into plasma, creating a plasma environment between the upper electrode element 120 and the lower electrode assembly 110 . The plasma environment contains a large number of electrons, ions, excited atoms, molecules, free radicals, etc. Active particles, the above-mentioned active particles can undergo various physical and/or chemical reactions with the surface of the wafer W to be processed, causing the morphology of the wafer W to be processed to change, thereby completing the processing of the wafer W to be processed.

Furthermore, the vacuum reaction chamber 100 is provided with an exhaust port 104 on the cavity. In this embodiment, the exhaust port 104 is provided at the bottom of the vacuum reaction chamber 100, that is, the bottom of the reaction chamber body 101. A gas extraction device 130 removes the gas inside the vacuum reaction chamber 100 through the exhaust port 104. The reaction waste products are discharged out of the chamber. Optionally, the gas extraction device 130 can be a molecular pump or a dry pump (dry vacuum pump). Of course, the structure of the gas extraction device 130 is not limited to this, and it can also be any other device that can achieve the same gas extraction function. .

As shown in FIG. 1 , the plasma processing device further includes a plasma confinement device 140 , which is disposed around the outside of the lower electrode assembly 110 . The plasma confinement device 140 confines the plasma in the reaction area between the upper electrode element 120 and the lower electrode assembly 110 to prevent plasma from leaking to the non-reaction area and causing damage to components in the non-reaction area. Optionally, the plasma confinement device 140 is provided with a plurality of circumferential slots to allow gas to circulate.

Further, as shown in FIG. 1 , the plasma processing device further includes an air flow balancing component 150 , and the gas flow balancing component 150 is disposed below the plasma confinement device 140 . Specifically, the air flow balancing component 150 includes a plurality of staggered partitions, and a non-linear gas path is formed between the staggered partitions for extending the gas flow in the vacuum reaction chamber 100. The distance from the plasma confinement device 140 to the exhaust port 104 . The gas in the reaction area between the upper electrode element 120 and the lower electrode assembly 110 flows into the bottom of the vacuum reaction chamber 100 through the circumferential slot of the plasma confinement device 140, and the gas flow balancing component 150 is located in the There is a certain airflow blocking effect between the plasma confinement device 140 and the exhaust port 104 . The airflow balancing component 150 places the reaction area at the far end relative to the gas extraction device 130 , weakening the gas extraction device 130 Effect on gas pressure in the reaction zone. On the other hand, the airflow balancing component 150 is disposed between the plasma confinement device 140 and the exhaust port 104, which increases the shielding between the exhaust port 104 and the wafer W, thereby avoiding Some tiny particles discharged from the gas extraction device 130 or during the process flow back onto the wafer W from the exhaust port 104, causing contamination of the wafer W. Furthermore, particles such as polymers generated during the manufacturing process are easily attached to the air flow balancing component 150 . The gas flow balancing component 150 is easy to disassemble and clean, which helps maintain the environment in the vacuum reaction chamber 100 .

In this embodiment, the airflow balancing component 150 can be divided into a first area A and a second area B. The distance between the first area A and the exhaust port 104 is shorter than the distance between the second area B and the exhaust port 104 . distance, that is, the first area A is close to the exhaust port 104 and the second area B is far away from the exhaust port 104 . Both the first region A and the second region B contain a plurality of staggered partitions, so as to change the traveling path of the gas in the reaction region. The gas will not flow directly from the plasma confinement device 140 to the exhaust port 104, but will flow to the exhaust port 104 through the first area A and the second area B of the gas flow balancing assembly 150, extending the exhaust path, even if the first area The gas flow rates in A and the second area B are consistent, and the air flow balancing component 150 will also compensate the gas pressure in the reaction area, further solving the problem of gas pressure bias in the reaction area and ensuring the etching effect of the wafer W.

Specifically, the airflow balancing component 150 includes an inner wall 151 and an outer wall 152 . The inner wall 151 is arranged around the outside of the lower electrode assembly 110 , the outer wall 152 is arranged around the outside of the inner wall 151 , the outer wall 152 is connected to the inner wall 151 , and the airflow balancing component 150 There are multiple airflow holes on it for gas circulation. Each partition is disposed between the inner wall 151 and the outer wall 152. The partition is a first partition 154 or a second partition 155. The first partition 154 is connected to the inner wall 151. The second partition 155 is connected to the outer wall 152. Optionally, the connections between the first partition 154 and the second partition 155 and the inner wall 151 and the outer wall 152 can be interchanged.

Optionally, the bottom of the outer wall 152 and the bottom of the inner wall 151 are connected through a bottom plate 153 . According to actual application requirements, airflow holes can be opened on the bottom plate 153 so that gas can flow from the bottom of the airflow balancing assembly 150 to the exhaust port 104 located at the bottom of the vacuum reaction chamber 100 . It should be noted that the location of the airflow holes of the airflow balancing component 150 is not limited to the bottom plate 153. According to the position of the exhaust port 104, process requirements or installation distribution requirements inside the vacuum reaction chamber 100, the airflow balancing component can also be located on the bottom plate 153. Air flow holes are provided on the inner wall 151 and/or the outer wall 152 and/or the first partition 154 and/or the second partition 155 of the assembly 150 for gas circulation. It should be further noted that the inner wall 151 and the outer wall 152 are not limited to being connected through the bottom plate 153. They can also be connected in any other way, such as using multiple connecting rods to connect the inner wall. 151 is connected to the outer wall 152 for gas circulation.

In this embodiment, the first partition plates 154 and the second partition plates 155 are arranged in a staggered manner to form a non-linear gas path and increase the gas traveling path. Of course, the arrangement between the first partition 154 and the second partition 155 is not limited to "from top to bottom: the first partition 154, the second partition 155, the first partition 154, the second partition The arrangement of the partitions 155..." can also be any other arrangement that can adjust the gas walking path, such as "from top to bottom, the first partition 154, the second partition 155, the second partition 155, The first partition 154... (the second partition 155 has different lengths)" arrangement.

Furthermore, the gas circulation velocity in the first area A is smaller than the gas circulation velocity in the second area B, that is, the air flow velocity on the side of the air flow balancing component 150 near the exhaust port 104 is smaller than the gas flow velocity on the side away from the exhaust port 104 . The airflow speed on one side is adjusted to achieve airflow balance. Optionally, the circumferential range of the second area B is greater than or equal to the circumferential range of the first area A. For example, the circumferential range of the first area A is 30°~120°.

Optionally, the first partition plate 154 and the second partition plate 155 in the first area A and the second area B are arranged parallel to each other, and the first partition plate 154 and the second partition plate 155 in the first area A are The staggered overlap range of the partitions 155 is larger than the staggered overlap range of the first partitions 154 and the second partitions 155 in the second area B, so that the air paths formed between the partitions in the first area A are The channel is longer than the gas channel in the second area B to balance the circumferential gas flow rate of the plasma confinement device 140, further ensuring the balance of the gas flow in the reaction area, ensuring the etching effect of the wafer W, and avoiding deviation. Edge phenomenon, thereby ensuring the etching effect of wafer W.

In another embodiment, the number of airflow holes in the first area A is smaller than the number of airflow holes in the second area B, so as to reduce the passing diameter of the gas, reduce the gas flow rate in the first area A, and balance the reaction. The gas pressure in the area makes the etching rate at each phase angle consistent, ensuring the etching effect of the wafer W.

According to the position of the exhaust port 104, process requirements or installation distribution requirements inside the vacuum reaction chamber 100, the inner wall 151 and/or the outer wall 152 of the air flow balancing assembly 150 and/or the first partition 154 and/or the third Air flow holes are provided on the second partition plate 155 and/or the bottom plate 153 for gas circulation. When the first partition 154 or the second partition 155 is provided with air flow holes, the number of air flow holes of each partition in the first area A is smaller than the number of air flow holes of each partition in the second area B. Optionally, the opening positions of the gas flow holes of each partition in the first area A can be arranged in a staggered manner to increase the traveling path of the gas in the first area A and balance and compensate the gas flow rate in the circumferential direction of the reaction area. When the bottom plate 153 is provided with air flow holes, the position and number of the air flow holes on the bottom plate 153 can be adjusted according to the position of the exhaust port 104 to achieve the effect of balancing the gas flow rate of the air flow balancing assembly 150 .

Optionally, the edge of the partition located in the first area A is in an upward-inclined state or a horizontal state, and the edge of the partition located in the second area B is in a horizontal state or a downward-inclined state, so that the third The air flow blocking effect in the first area A is better than that in the second area B, which helps to achieve a balanced air flow in the circumferential direction of the wafer W and maintain a balanced gas environment. As shown in FIG. 2 , it is a schematic diagram of the arrangement of the internal partitions of the airflow balancing assembly 150 in an embodiment (taking the first partition 154 as an example). The edge of the partition in the first area A is inclined upward, and the edge of the partition in the second area B is inclined downward. Gas flows in from above the air flow balancing component 150, and the inner edge of the partition in the first area A is further inclined upward. The flow velocity of the gas is slowed down, and the downward-trending partition of the edge in the second area B further promotes the circulation of the gas, making the gas flow velocity in the first area A smaller than the gas flow velocity in the second area B.

It can be seen from the above that the gas in the reaction area flows to the exhaust port 104 through the first area A and the second area B of the gas flow balancing assembly 150 . Because the second area B of the airflow balancing component 150 is on the side away from the exhaust port 104, and the gas flow rate in the first area A is smaller than the gas flow rate in the second area B, the first area The gas walking path in A is extended, which helps to reduce the gas flow rate on the side close to the exhaust port 104, alleviates the asymmetric effect of the gas extraction device 130 on the reaction area and the cavity environment, and effectively solves the problem of wafer W Side problem. The flow rate of the gas flowing out of the first area A of the gas flow balancing assembly 150 approaches the flow rate of the gas flowing out of the second area B, so that the circumferential gas flow rate of the plasma confinement device 140 tends to be stable, and the upper electrode The gas flow rate in the circumferential direction of the reaction area between the element 120 and the lower electrode assembly 110 tends to be the same, which contributes to the uniformity of etching of the wafer W, does not cause the etching edge deviation of the wafer W, and ensures the etching of the wafer W. effect to obtain the optimal process symmetry effect.

Of course, the shape and structure of the gas flow balancing component 150 are not limited to the above-mentioned structure, and can also be other structures that can block gas flow. The specific structure can be changed according to the placement requirements of other components inside the vacuum reaction chamber 100 or other factors. . For example, the air flow balancing assembly 150 further includes a top plate with air flow holes. The air flow left from the plasma confinement device 140 flows through the top plate between the inner wall 151 and the outer wall 152 . The top plate is located in the air flow of the first area A. The number of holes is smaller than the number of gas flow holes located in part B of the second area to slow down the gas flow rate in the first area A, which helps to balance the gas flow rate in the circumferential direction of the wafer W and contributes to the uniformity of etching of the wafer W. .

Further, the airflow balancing component 150 includes a plurality of supporting legs 156 disposed at the bottom of the bottom plate 153 to support the bottom plate 153 . The position of the support legs 156 can be adjusted according to the position of other components inside the chamber, which increases the flexibility of the internal layout of the vacuum reaction chamber 100 and makes full use of the internal space in the vacuum reaction chamber 100 . The internal components of the vacuum reaction chamber 100 are complex and diverse. The support legs 156 set up the combined portion of the inner wall 151 and the outer wall 152 so that other components can be arranged in the area below it according to process requirements to make the process conditions more complete.

Of course, the air flow equalization assembly 150 may not be provided with the support legs 156 , that is, the gas in the reaction area flows to the air flow equalization assembly 150 through the plasma confinement device 140 , and the gas passes from the bottom of the air flow equalization assembly 150 through the vacuum reaction chamber 100 The gaps between the components flow to the exhaust port 104 and then exhaust the vacuum reaction chamber 100 .

Optionally, the material of the air flow balancing component 150 includes aluminum alloy, engineering plastic, or stainless steel, which avoids the problem of particle contamination generated during the manufacturing process. Furthermore, the surface of the air flow balancing component 150 is provided with a corrosion-resistant material coating to prevent the transported gas or plasma from corroding the air flow balancing component 150, improve the service life of the air flow balancing component 150, and reduce material resources. of waste. Optionally, the corrosion-resistant material coating is a Teflon coating, an yttrium oxide film layer, or an anodized layer.

Embodiment 2

Based on the structural characteristics of the plasma processing device of Embodiment 1, this embodiment mainly makes some changes to the structure of the air flow balancing component.

As shown in FIG. 3 , it is a schematic diagram of the internal structure of the air flow balancing component 250 of the plasma processing device of this embodiment. Compared with Embodiment 1, in the airflow balancing assembly 250 in this embodiment, the number of partitions located in the first area A is greater than the number of partitions located in the second area B, and each part of the partitions is arranged in parallel. , part of which adopts a gradual trend to realize the conversion of the number of partitions.

Furthermore, each partition in the first area A is provided with airflow holes 255 to facilitate gas circulation. The opening positions of each airflow hole 255 can be staggered so that the gas circulation rate in the first area A is smaller than that in the second area B. The gas circulation rate slows down the gas circulation rate at the exhaust port to make the gas extraction rate uniform in all directions around the wafer W, which helps to improve the uniformity of the etching rate of the wafer W and ensures the etching effect of the wafer W to obtain Optimal process symmetry effect.

As shown in FIG. 3 , in this embodiment, the number of partitions in the first area A is twice the number of partitions in the second area B (FIG. 3 takes the first partition 254 as an example). The airflow holes 255 of the first partition 254 at the first area A can be arranged alternately, which can further increase the gas flow path and reduce the gas flow rate, so that the gas flow rate in the first area A is smaller than the gas flow rate in the second area B, Ensuring that the gas pressure in the reaction area is balanced helps improve the uniformity of the wafer W etching rate.

In addition, other structures and functions of each component of this embodiment, such as the upper electrode component, lower electrode assembly, etc., are the same as the components in Embodiment 1, and will not be described again here.

To sum up, the present invention provides a plasma processing device, which combines the plasma confinement device 140, the exhaust port 104 and the air flow balancing assembly 150. The air flow balancing assembly 150 is disposed on the plasma. Between the restraint device 140 and the exhaust port 104, the airflow balancing assembly 150 contains a plurality of staggered partitions. A non-linear air path is formed between the staggered partitions to extend the entire air flow. The distance from the gas in the vacuum reaction chamber 100 to the exhaust port 104 passes through the plasma confinement device 140. On the other hand, the gas flow balancing component 150 further prevents tiny particles from the gas extraction device 130 or other sources. The contaminants flow back to the reaction area to avoid contamination of the surface of the wafer W.

Further, the airflow balancing assembly 150 includes a first area A and a second area B. The distance from the first area A to the exhaust port 104 is smaller than the distance from the second area B to the exhaust port 104. The gas circulation rate in the first area A is smaller than the gas circulation rate in the second area B, which slows down the gas circulation rate at the exhaust port 104 and alleviates the asymmetry of the gas extraction device 130 to the reaction area and chamber environment. The effect effectively solves the problem of wafer W edge deflection; the flow rate of the gas flowing out from the first area A of the gas flow balancing component 150 approaches the flow rate of the gas flowing out from the second area B, so that the plasma confinement device 140 The gas flow rate in the circumferential direction tends to be stable, and the gas flow rate in the circumferential direction of the reaction area between the upper electrode element 120 and the lower electrode assembly 110 tends to be the same, which contributes to the uniformity of etching of the wafer W and does not cause the formation of wafer W. The phenomenon of W etching edge deviation ensures the etching effect of wafer W to obtain the optimal process symmetry effect.

Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and alternatives to the present invention will be apparent to those of ordinary skill in the art upon reading the foregoing description. Therefore, the protection scope of the present invention should be limited by the appended patent application scope.

100: Vacuum reaction chamber 101:Reaction chamber cavity 102: Cavity end cover 103: Wafer transfer port 104:Exhaust port 110: Lower electrode assembly 120: Upper electrode component 130:Gas extraction device 140:Plasma Confinement Device 150,250: Air flow balancing component 151:Inner wall 152:Outer wall 153: Bottom plate 154,254: first partition 155:Second partition 156: Support leg 255:Airflow hole A:First area B:Second area W:wafer

Figure 1 is a plasma treatment device of the present invention; Figure 2 is a partial schematic diagram of an airflow balancing component of the present invention; and Figure 3 is a partial schematic diagram of another air flow balancing component of the present invention.

100: Vacuum reaction chamber

101:Reaction chamber cavity

102: Cavity end cover

103: Wafer transfer port

104:Exhaust port

110: Lower electrode assembly

120: Upper electrode component

130:Gas extraction device

140:Plasma Confinement Device

150: Air flow balancing component

151:Inner wall

152:Outer wall

153: Bottom plate

154:First partition

155:Second partition

156: Support leg

A:First area

B:Second area

W:wafer

Claims (14)

A plasma processing device, which includes: a vacuum reaction chamber, the vacuum reaction chamber has a lower electrode assembly, and the vacuum reaction chamber has an exhaust port to discharge the gas inside the vacuum reaction chamber; a plasma a restraint device, which is arranged around the outside of the lower electrode assembly; and an air flow equalization assembly, which is disposed between the plasma restraint device and the exhaust port, the air flow equalization assembly includes a plurality of staggered partitions, A non-linear gas path is formed between the staggered partitions, which is used to extend the distance from the gas in the vacuum reaction chamber to the exhaust port through the plasma confinement device; wherein the air flow balancing component includes a first area and a second area, the distance from the first area to the exhaust port is smaller than the distance from the second area to the exhaust port. The plasma processing device of claim 1, wherein the air flow balancing component includes: an inner wall surrounding the outside of the lower electrode assembly; and an outer wall surrounding the inner wall, and the outer wall is connected to the lower electrode assembly. The inner wall is connected; each partition is disposed between the inner wall and the outer wall. The partition is a first partition or a second partition. The first partition is connected to the inner wall, and the second partition is connected to the inner wall. The partitions are connected to the outer wall, and the first partitions and the second partitions are arranged in a staggered manner; airflow holes are provided on the inner wall and/or the outer wall and/or the first partition and/or the second partition. for gas circulation. The plasma processing device of claim 2, wherein the bottom of the outer wall and the bottom of the inner wall are connected through a bottom plate; or the outer wall and the inner wall are connected through a plurality of connecting rods. The plasma processing device according to claim 2, wherein the air flow balancing group The component also includes: a plurality of supporting legs, which are arranged at the bottom of the air flow balancing component to support the air flow balancing component. The plasma processing device of claim 1, wherein the gas flow rate in the first region is smaller than the gas flow rate in the second region. The plasma processing device according to claim 5, wherein the staggered overlap range of the baffles located in the first area is larger than the staggered overlap range of the baffles located in the second area, so that the partitions in the first area The air channel formed between the plates is larger than the air channel in the second area. The plasma processing device as claimed in claim 5, wherein the number of the partitions located in the first area is greater than the number of the partitions located in the second area, and gas flow holes are opened on the partitions for gas circulation. The plasma processing device of claim 5, wherein the edge of the partition located in the first area is in an upwardly inclined state or a horizontal state, and the edge of the partition located in the second area is in a horizontal state or downwards. Tilt state. The plasma processing device of claim 5, wherein the air flow balancing component is provided with a plurality of air flow holes, and the number of air flow holes in the first area is smaller than the number of air flow holes in the second area. The plasma processing device according to claim 1, wherein the circumferential range of the second area is greater than or equal to the circumferential range of the first area. The plasma processing device according to claim 1, wherein the circumferential range of the first area is 30°~120°. The plasma processing apparatus according to claim 1, wherein the partition plates are arranged parallel to each other; and/or the partition plates are partially arranged in parallel. The plasma processing device according to claim 1, wherein the material of the air flow equalization component includes aluminum alloy, engineering plastics or stainless steel; and/or, the surface of the air flow equalization component is provided with a corrosion-resistant material coating. The plasma processing device according to claim 13, wherein the corrosion-resistant material coating is a Teflon coating, an yttrium oxide film layer, or an anodized layer.