CN108048818A - Chemical vapor deposition unit and its application method - Google Patents
Chemical vapor deposition unit and its application method Download PDFInfo
- Publication number
- CN108048818A CN108048818A CN201711366601.4A CN201711366601A CN108048818A CN 108048818 A CN108048818 A CN 108048818A CN 201711366601 A CN201711366601 A CN 201711366601A CN 108048818 A CN108048818 A CN 108048818A
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- Prior art keywords
- pedestal
- vapor deposition
- chemical vapor
- deposition unit
- chip
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
Abstract
A kind of chemical vapor deposition unit and its application method, wherein, the chemical vapor deposition unit, including：Reaction chamber；Autoreaction top of chamber runs through the spray assemblies in the reaction chamber；Pedestal positioned at the spray assemblies at least one side, the substrate include loading surface, and the pedestal has job site situation, and when the substrate is in job site situation, the loading surface is perpendicular to horizontal plane, and the loading surface is towards the spray assemblies side wall.It is preferable in the film performance that chip surface is formed using the chemical vapor deposition unit.
Description
Technical field
The present invention relates to chemical vapour deposition technique field, more particularly to a kind of chemical vapor deposition unit and its user
Method.
Background technology
Chemical vapor deposition (Chemical vapor deposition, CVD) is that reactant issues biochemistry in gaseous condition
Reaction is learned, generation solid matter is deposited on the solid matrix surface of heating, and then the technology of solid material is made, and passes through
Chemical vapor deposition unit is achieved.Specifically, reaction gas is passed through instead by chemical vapor deposition unit by inlet duct
Should be indoor, and control the reaction conditions such as the indoor pressure of reaction, temperature so that reaction gas reacts, so as to complete to deposit
Processing step.
It is however, poor using film performance prepared by existing chemical vapor deposition unit.
The content of the invention
The technical problem to be solved by the present invention is to provide a kind of chemical vapor deposition unit and its application methods, are utilized with improving
The chemical vapor deposition unit forms the performance of film.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of chemical vapor deposition unit, including：Reaction chamber；
Autoreaction top of chamber runs through the spray assemblies in the reaction chamber；Pedestal positioned at the spray assemblies at least one side, it is described
Pedestal includes loading surface, and the pedestal has job site situation, when the pedestal is located at job site situation, the loading surface
Perpendicular to horizontal plane, and the loading surface is towards the spray assemblies side wall.
Optionally, the pedestal also has " loaded " position state, when the substrate is located at " loaded " position state, the loading
Face is parallel to horizontal plane, and the loading surface is perpendicular to spray assemblies side wall.
Optionally, the pedestal is connected by connecting portion with reaction chamber bottom, and the pedestal can be rotated around connecting portion, with
Realize the mutual switching between " loaded " position and operating position；The connecting portion includes rotor type magneto magnetic drive device.
Optionally, when the number of the pedestal is more than 1, several pedestals are located at around spray assemblies, and several pedestals
For job site situation when, several loading surfaces are towards the side wall of spray assemblies.
Optionally, the chemical vapor deposition method device further includes：The transmitting device of reaction gas；The spray assemblies
Including being located at the nozzle in the reaction chamber, the nozzle edge has on the direction of horizontal plane to be fixed at the top of reaction chamber
The first face；The spray assemblies further include inlet channel, and described inlet channel one end is inserted into through the first face of nozzle in nozzle, institute
The inlet channel other end is stated with the transmitting device of reaction gas to be connected.
Optionally, the nozzle includes the first showerhead and the second showerhead that are located at inlet channel both sides respectively；It is described
First showerhead includes primary heater and the flowing plates such as first positioned at the heater surfaces, along parallel to the flowing plates table such as first
On the direction in face, the flowing plates such as described first include the first compact district and the first peripheral region around the first compact district；It is described
Second showerhead includes secondary heater and the flowing plates such as second positioned at secondary heater surface, along parallel to the flowing plates table such as second
On the direction in face, the flowing plates such as described second include the second compact district and the second peripheral region around the second compact district；It is described
Inlet channel includes the first air inlet pipe and the second air inlet pipe, wherein the first air inlet pipe and the first compact district of first showerhead
Connection, the second air inlet pipe are connected with second the second compact district of showerhead.
Optionally, there is in the flowing plates such as described first first through hole through the flowing plates such as first, the in the first compact district
The aperture of one through hole is less than the aperture of the first peripheral region first through hole；Have in the flowing plates such as described second through the flowing plates such as second
Second through hole, the aperture of the second through hole in the second compact district are less than the aperture of second the second through hole of peripheral region.
Optionally, the pedestal adsorbs pedestal for high temperature electrostatic.
Optionally, the loading surface of the pedestal is used to load chip.
The present invention also provides a kind of application method of chemical vapor deposition unit, including：Above-mentioned chemical vapor deposition is provided
Process unit；Chip is provided；When the pedestal is placed in " loaded " position state, the chip is loaded into the loading surface of pedestal
On；After loading chip, the pedestal and chip are placed in job site situation, make the surface of the chip perpendicular to level
Face, and the surface of the chip is towards spray assemblies；After the pedestal is switched to job site situation, reaction gas is passed through
After the reaction gas is by spray assemblies, film is formed in the chip surface for body.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that：
In the application method for the chemical vapor deposition unit that technical solution of the present invention provides, the pedestal and chip are placed in
Job site situation makes the surface of chip perpendicular to horizontal plane, and the surface of the chip is towards the side wall of spray assemblies.Subsequently
During the chip surface forms film, even if reaction gas is combined into particulate matter before chip surface is reached, institute
Particulate matter is stated by the effect of gravity to be fallen.But since the surface of chip is perpendicular to horizontal plane so that particulate matter will not fall
Fall on the surface of film so that particulate matter is smaller on the performance influence of film, is conducive to improve the performance of film.
Further, the spray assemblies include nozzle, and the nozzle includes the first showerhead positioned at inlet channel both sides
With the second showerhead, the admission line includes the first air inlet pipe and the second air inlet pipe, wherein the first air inlet pipe and the first nozzle
Portion connects, and the second air inlet pipe is connected with the second showerhead.By controlling the flow of the first air inlet pipe and the second air inlet pipe respectively, with
Satisfactory film is formed on the chip of spray assemblies both sides respectively.
Further, first showerhead includes primary heater and the flowing plates such as first positioned at primary heater surface.
The first grade streams version along parallel to having the first compact district and the first peripheral region on the direction on the flowing plates surface such as first, first into
Tracheae is connected with the first compact district of the first nozzle.There is the first through hole through the first grade streams version in the flowing plates such as described first,
The aperture of the first through hole of first compact district is less than the aperture of the first peripheral region first through hole so that reaction gas passes through first etc.
After flowing plate, the first compact district and the first peripheral region outflow reaction gas flow difference it is smaller so that with the first nozzle
The thickness difference opposite sex of the film formed on the opposite chip in portion is smaller.
Further, second showerhead includes secondary heater and the flowing plates such as second positioned at secondary heater surface.
The flowing plates such as described second along parallel on the direction on the flowing plates surface such as second have the second compact district and the second peripheral region, second into
Tracheae is connected with the second compact district of the second nozzle.There is the second through hole through the second grade streams version in the flowing plates such as described second,
The aperture of second through hole of the second compact district is less than the aperture of second the second through hole of peripheral region so that reaction gas passes through second etc.
After flowing plate, the second compact district and the second peripheral region outflow reaction gas flow difference it is smaller so that with the second nozzle
The thickness difference opposite sex of the film formed on the opposite chip in portion is smaller.
Further, the pedestal can rotate in the horizontal direction parallel to spray assemblies side wall, be conducive to entire core
Panel region carries out deposition and forms the film.
Description of the drawings
Fig. 1 is a kind of structure diagram of chemical vapor deposition unit；
Fig. 2 is the structure diagram of chemical vapor deposition unit of the present invention；
Fig. 3 is the enlarged drawing of spray assemblies in chemical vapor deposition unit of the present invention；
Fig. 4 is diagrammatic cross-sections of the Fig. 3 along A-A1 lines；
Fig. 5 is the bottom view of pedestal in chemical vapor deposition unit of the present invention.
Specific embodiment
As described in background, the film performance formed using prior art vapor phase growing apparatus is poor.
Fig. 1 is a kind of structure diagram of chemical vapor deposition unit.
It please refers to Fig.1, reaction chamber 100, the reaction chamber 100 includes the first area A and the second area B；It is reacted positioned at the first area A
The first chemical vapor deposition portion in chamber 100, the first chemical vapor deposition portion include：It is pushed up positioned at first area's A reaction chambers 100
Portion has the first spray assemblies 101；The first heating of 100 bottom of reaction chamber is oppositely arranged on first spray assemblies 101
Device 102；The first chip 103 positioned at 102 surface of primary heater, surface and the first spray assemblies of first chip 103
101 surface is opposite；The second chemical vapor deposition portion in second area's B reaction cavities 100, second chemical vapor deposition
Product portion includes：There are the second spray assemblies (not marked in figure) positioned at second area's B reaction chambers, 100 top；With the described second spray
Component is oppositely arranged on the secondary heater (not marked in figure) of 100 bottom of reaction chamber；Second positioned at secondary heater surface
Chip (does not mark) in figure, and the surface of second chip is opposite with the surface of the second spray assemblies.
In above-mentioned chemical vapor deposition unit, in order to handle two panels chip simultaneously, the first gas phase is set in reaction chamber 100
Deposition portion and the second vapor deposition portion, the first vapor deposition portion is for handling the first chip 103, in first chip
103 surfaces form the first film 104, and the second vapor deposition portion is for handling the second chip, in second chip surface
Form the second film.
By taking the first chemical vapor deposition portion as an example, illustrate the film forming procedure of the first film 104.It is specific as follows：For
The reaction gas of the first film 104 is formed by the first spray assemblies 101, the first film is formed on 103 surface of the first chip
104.Likewise, the second film is formed in the second chip surface using the second chemical vapor deposition portion.
However, during the first film 104 is formed, partial reaction gas is before 103 surface of the first chip is reached
It has reacted to each other to form particulate matter.Since 101 surface of the first spray assemblies is opposite with the surface of the first chip 103, described
Grain object easily falls with the effect of reaction gas and gravity itself on 103 surface of the first chip, influences the film forming of the first film 104
Property so that the poor-performing of the first film 104 formed.Also, it is formed after the first film 104, even if interrupting reaction gas
Body, still floating parts particulate matter, the particulate matter are acted on by gravity between the first spray assemblies 101 and the first chip 103,
Also fall on 104 surface of the first film so that the performance of the first film 104 is further deteriorated.Likewise, it is sunk using the second gas phase
The performance for the second film that product portion is formed is also poor.
To solve the technical problem, the present invention provides a kind of chemical vapor deposition unit, including：Reaction chamber；It is reflexive
The spray assemblies that top of chamber is answered to run through in the reaction chamber；Pedestal positioned at the spray assemblies at least one side, the pedestal
Including loading surface, the pedestal includes operating position, and when the pedestal is located at operating position, the loading surface is perpendicular to level
Face, and the loading surface is towards the spray assemblies side wall.Using the chemical vapor deposition unit formed film performance compared with
It is good.
It is understandable for above-mentioned purpose, feature and advantageous effect of the invention is enable to become apparent, below in conjunction with the accompanying drawings to this
The specific embodiment of invention is described in detail.
Fig. 2 is the structure diagram of chemical vapor deposition unit of the present invention.
It please refers to Fig.2, the chemical vapor deposition unit includes：Reaction chamber 200；200 top of autoreaction chamber is run through into institute
State the spray assemblies 201 in reaction chamber 200；Pedestal 202 positioned at the spray assemblies 201 at least one side, the pedestal 202 wrap
Loading surface 1 is included, the pedestal 202 has job site situation 11, described when the pedestal 202 is located at job site situation 11
Loading surface 1 is perpendicular to horizontal plane X, and the loading surface 1 is towards the side wall of spray assemblies 201.
The chemical vapor deposition unit includes：Metal organic chemical vapor deposition (Metal Organic Chemical
Vapor Deposition, MOCVD) device, low-pressure chemical vapor deposition (Low Pressure Chemical Vapor
Deposition, LPCVD) device or atomic layer deposition (Atomic Layer Deposition, ALD) device.
The reaction chamber 200 is used to provide reaction environment subsequently to form film in chip surface.The reaction environment bag
It includes：Pressure or temperature, the reaction environment are set according to the formation condition of film.
The material of the reaction chamber 200 includes stainless steel.
The spray assemblies 201 include：Nozzle 201b in reaction chamber 200, along perpendicular to the direction of horizontal plane X
On, the nozzle 201b has the first face 2 for being fixed on 200 top of reaction chamber.
The chemical vapor deposition method device further includes：The transmitting device of reaction gas；The spray assemblies 201 also wrap
It includes：Inlet channel 201a, described inlet channel 201a one end are inserted into through the first faces of nozzle 201b 2 in nozzle 201b, the air inlet
The passage 201a other ends are connected with the transmitting device of reaction gas.
The inlet channel 201a is used to transmit reaction gas.The material of the admission line 201a includes：Metal or
Heat-resisting material.
Fig. 3 is the partial enlarged view of spray assemblies 201 in chemical vapor deposition unit of the present invention.
In the present embodiment, the inlet channel 201a includes：Second air inlet pipe 250 and the first air inlet pipe 251, described
X-direction is arranged in parallel along the horizontal plane for the entrance of two air inlet pipe 250 and the first air inlet pipe 251.
The nozzle 201b includes the first showerhead 290 and the second showerhead 291 positioned at admission line 201a both sides.Its
In the first air inlet pipe 251 be inserted into the first showerhead 290 in, the second air inlet pipe 250 be inserted into the second nozzle 291 in.
In other embodiments, the inlet channel does not include the first air inlet pipe and the second air inlet pipe, the reaction gas
Directly entered by inlet channel in the first showerhead and the second showerhead；Alternatively, the inlet channel includes two or two
A above the first air inlet pipe and two or more the second air inlet pipe.
The air inlet pipe 250 is used to transmit reaction gas.In the present embodiment, wherein the first air inlet pipe 251 insertion first
In showerhead 290, the second air inlet pipe 250 is inserted into the second showerhead 291, by controlling the first air inlet pipe 251 and second respectively
The flow of 250 reaction gases of air inlet pipe so that be subsequently respectively formed respectively on 203 surface of chip of 201 both sides of spray assemblies
Satisfactory film.
First showerhead 290 includes：Primary heater 261 and first positioned at 261 surface of primary heater
Etc. flowing plates 260.Second showerhead 291 includes：Secondary heater (not marked in figure) and positioned at the secondary heater table
The flowing plates such as the second of face (do not mark) in figure.
The flowing plates 260 such as described first have the first compact district I and the along the direction parallel to 260 surface of the flowing plates such as first
One peripheral region II, 260 first compact district I of the flowing plates such as described first and in the first peripheral region II around the first compact district I
The first through hole 210 through the flowing plates 260 such as first is respectively provided with, is specifically please referred to Fig.4, Fig. 4 is that Fig. 3 illustrates along the section of A-A1 lines
Figure.
In the present embodiment, it is less than II first through hole 210 of the first peripheral region positioned at the aperture of I through hole 210 of the first compact district
Aperture.In other embodiments, it is identical with the aperture of first through hole in the first peripheral region positioned at the first compact district.
In the present embodiment, since the first air inlet pipe 251 is located at first compact district I, if the first compact district I
It is identical with the aperture of the first through hole 210 of the first peripheral region II, then so that the reaction gas for passing through I through hole 210 of the first compact district
Flow be more than II reaction gas of the first peripheral region flow.Therefore the aperture of first through hole 210 in the first compact district I is reduced, make
It is smaller by the difference in flow opposite sex after the flowing plates 260 such as first to obtain reaction gas, then it is follow-up along parallel to 290 phase of the first showerhead
To 203 surface direction of chip on, 203 surface of chip formed film thickness difference it is smaller.
Correspondingly, second showerhead 291 includes secondary heater (not marked in figure) and positioned at secondary heater table
The flowing plates such as the second of face (do not mark) in figure.The flowing plates such as described second have through the flowing plates such as second the second through hole (in figure not
It shows).The flowing plates such as described second along parallel on the direction on the flowing plates surface such as second have the second compact district (not shown)
And the second peripheral region around the second compact district, second air inlet pipe 250 are inserted into the second compact district, the second compact district
The aperture of second through hole is less than the aperture of the second peripheral region so that after reaction gas is by the flowing plates such as second, from the second compact district
It is smaller with the gas flow difference of the second peripheral region, it advantageously reduces follow-up along parallel to the opposite chip of the second showerhead 291
The difference in thickness of surface film.
The material of the flowing plates 260 such as described first and the second grade streams version includes：Aluminium alloy or titanium-aluminium alloy.
The primary heater 261 is located at the chip on 261 surface of primary heater for subsequent heat.Second heating
Device is located at the chip on secondary heater surface for subsequent heat.The primary heater 261 and secondary heater include：Radio frequency
Heater, infrared radiation heater or resistance heater.
The pedestal 202 is used for follow-up chip placement 203, and the substrate 202 includes：High temperature electrostatic absorption pedestal (High
Temperature Electrostatic Chucks)。
The pedestal 202 further includes " loaded " position state 12 (see Fig. 2), and the pedestal 202 is placed in " loaded " position state 12
When, the loading surface 1 is parallel to horizontal plane X, and the loading surface 1 is perpendicular to 201 side wall of spray assemblies.
The pedestal 202 is connected by connecting portion 220 with 200 bottom of reaction chamber, and the pedestal 202 can be around connecting portion
220 rotations, to realize the mutual switching between " loaded " position state 12 and operating position；The connecting portion 220 includes rotator type
Permanent-magnet transmission device.
The pedestal 202 has electrostatic adsorption so that when pedestal 202 switches to working condition by loading condition, energy
It enough prevents chip 203 from falling from 202 surface of pedestal, is conducive to form film on 203 surface of chip.
The pedestal 202 is connected by connecting portion 220 with 200 bottom of reaction chamber, and the pedestal 202 can be around connecting portion
220 rotate to the side wall of nozzle 201b so that the chip 203 positioned at 202 surface of pedestal is opposite with the side wall of nozzle 201b, favorably
In in 203 surface of chip formation film.Also, since chip 203 is opposite with nozzle 201b side walls so that even if reaction gas exists
Particulate matter is combined to form between nozzle 201b and chip 203, particulate matter will not fall on the surface of chip 203 so that institute's shape
Into the better performances of film.
Also, the pedestal 202 can also be moved along the horizontal direction parallel to 201 side wall of nozzle component, be conducive to
Deposition is carried out to entire chip 203 and forms film.
In the present embodiment, the number of the pedestal 202 is two, and described two pedestals 202 are located at spray group respectively
201 both sides of part, and pedestal 202 be job site situation 11 when, two loading surfaces 1 are towards the side wall of spray assemblies 201.At it
In his embodiment, the number of the pedestal is more than one or two.
In the present embodiment, 202 bottom of substrate is circle.In other embodiments, the bottom of the pedestal is more
It is angular.
Fig. 5 is refer to, the pedestal 202 includes the marginal zone D around central area C and central area C, the marginal zone D tools
There is the first opening 270 through marginal zone D pedestals 202, the central area I has the second opening 271 through central area I.
It should be noted that Fig. 5 is the bottom view of chemical vapor deposition unit pedestal of the present invention.
The pedestal 202 further includes loading part (not shown), and the loading part can pass freely through the first opening
270, the loading part insertion first is open in 270, for loading the chip 203；The loading part is out of first opening 270
It exits, for unloading the chip 203.The number of first opening 270 is 3.
For being passed through inert gas, the inert gas includes second opening 271：Argon gas, the inert gas energy
Enough further improve forms the uniformity of film on 203 surface of chip, and principle includes：The inert gas passes through the second opening
271 enter the central area C of chip 203, and the diffusion of the inert gas can take away the heat of 203 central area C of chip, be conducive to subtract
The synthesis speed of 203 central area C films of slow chip, and then be conducive to further reduce 203 central area C of chip and marginal zone D's
Thickness difference.
Correspondingly, the present invention also provides a kind of methods that film is formed using above-mentioned chemical vapor deposition unit, refer to
Fig. 2, specific application method include：
Above-mentioned chemical vapor deposition unit is provided；
Chip 203 is provided；
When the pedestal is placed in " loaded " position state 12, the pedestal 202 is switched to job site situation 11, makes institute
The surface of chip 203 is stated perpendicular to horizontal plane X, and the surface of the chip 203 is towards the side wall of spray assemblies 201；
After will the pedestal 202 being switched to job site situation 11, reaction gas is passed through, the reaction gas passes through
After spray assemblies 201, film 204 is formed on 203 surface of chip.
Although present disclosure is as above, present invention is not limited to this.Any those skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the scope of restriction.
Claims (10)
1. a kind of chemical vapor deposition unit, which is characterized in that including：
Reaction chamber；
Autoreaction top of chamber runs through the spray assemblies in the reaction chamber；
Pedestal positioned at the spray assemblies at least one side, the pedestal include loading surface, and the pedestal has operating position shape
State, when the pedestal is located at job site situation, the loading surface is perpendicular to horizontal plane, and the loading surface is towards the spray
Component side wall.
2. chemical vapor deposition unit as described in claim 1, which is characterized in that the pedestal also has " loaded " position shape
State, when the substrate is located at " loaded " position state, the loading surface is parallel to horizontal plane, and the loading surface is perpendicular to spray group
Part side wall.
3. chemical vapor deposition unit as claimed in claim 2, which is characterized in that the pedestal passes through connecting portion and reaction chamber
Bottom is connected, and the pedestal can be rotated around connecting portion, to realize the mutual switching between " loaded " position and operating position；It is described
Connecting portion includes rotor type magneto magnetic drive device.
4. chemical vapor deposition unit as described in claim 1, which is characterized in that when the number of the pedestal is more than 1, if
Butt seat is located at around spray assemblies, and several pedestals be job site situation when, several loading surfaces are towards spray assemblies
Side wall.
5. chemical vapor deposition unit as described in claim 1, which is characterized in that the chemical vapor deposition method device is also
Including：The transmitting device of reaction gas；The spray assemblies include the nozzle being located in the reaction chamber, and the nozzle is along vertically
The first face at the top of reaction chamber is fixed in having on horizontal plane direction；The spray assemblies further include inlet channel, it is described into
Gas passage end is through in the first face of nozzle insertion nozzle, the inlet channel other end is connected with the transmitting device of reaction gas.
6. chemical vapor deposition unit as claimed in claim 5, which is characterized in that the nozzle includes positioned at air inlet leading to respectively
The first showerhead and the second showerhead of road both sides；First showerhead includes primary heater and positioned at the heater table
The flowing plates such as the first of face, along parallel on the direction on the flowing plates surface such as first, the flowing plates such as described first include the first compact district and
The first peripheral region around the first compact district；Second showerhead includes secondary heater and positioned at secondary heater table
The flowing plates such as the second of face, along parallel on the direction on the flowing plates surface such as second, the flowing plates such as described second include the second compact district and
The second peripheral region around the second compact district；The inlet channel includes the first air inlet pipe and the second air inlet pipe, wherein the
One air inlet pipe is connected with the first compact district of first showerhead, and the second air inlet pipe connects with second the second compact district of showerhead
It connects.
7. chemical vapor deposition unit as claimed in claim 6, which is characterized in that have in the flowing plates such as described first through the
The first through hole of first-class flowing plate, the aperture of the first through hole in the first compact district are less than the aperture of the first peripheral region first through hole；
There is the second through hole through the flowing plates such as second, the aperture of the second through hole in the second compact district is less than in the flowing plates such as described second
The aperture of second the second through hole of peripheral region.
8. chemical vapor deposition unit as described in claim 1, which is characterized in that the pedestal adsorbs base for high temperature electrostatic
Seat.
9. chemical vapor deposition unit as described in claim 1, which is characterized in that the loading surface of the pedestal is used to load core
Piece.
10. a kind of application method of chemical vapor deposition unit, which is characterized in that including：
It provides such as claim 1 to claim 9 any one of them chemical vapor deposition unit；
Chip is provided；
When the pedestal is placed in " loaded " position state, the chip is loaded on the loading surface of pedestal；
After loading chip, the pedestal is switched to job site situation, makes the surface of the chip perpendicular to horizontal plane, and
The surface of the chip is towards the side wall of spray assemblies；
After the pedestal is switched to job site situation, reaction gas is passed through, after the reaction gas is by spray assemblies,
Film is formed in the chip surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711366601.4A CN108048818A (en) | 2017-12-18 | 2017-12-18 | Chemical vapor deposition unit and its application method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711366601.4A CN108048818A (en) | 2017-12-18 | 2017-12-18 | Chemical vapor deposition unit and its application method |
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| CN110004398A (en) * | 2019-04-24 | 2019-07-12 | 天津大学 | A kind of electric arc increasing material manufacturing home position alloying device and method of alternately fuse powder feeding |
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Application publication date: 20180518 |