201246291 六、發明說明： 【發明所屬之技術領域】 本發明，係關於具備有以真空狀態處理基板的真空處 理室之真空處理裝置。 【先前技術】 以往，例如在半導體製造製程等中，利用各種的真空 〇 處理裝置。作爲真空處理裝置之一例，係可舉出具備有用 以藉由濺鍍法或蒸鍍法等來形成膜的真空處理室之成膜裝 置。又，成膜裝置，係具備有用以將在真空處理室被成膜 後之基板搬出於外部之卸載室。該卸載室，係爲了將真空 處理室保持於真空而使其不與大氣連通所設置。具體上， 在真空處理室成膜後之基板，係從真空處理室被搬運至真 空狀態的卸載室，且封閉真空處理室之後，將卸載室回復 到大氣壓而將基板取出。 Q 於此，在將卸載室回復到大氣壓之際，藉由將所謂排 氣導入於卸載室內，而逐漸地將真空破壞。又，被導入於 卸載室之排氣係有時亦兼具有冷卻基板之作用。 例如’在卸載室，沿著被送進的基板之寬度方向設置 通氣管，且從沿著基板之長邊方向所設置的通氣管之複數 個噴出孔，使排氣噴出至基板之高度方向中央部分的技術 是已知的（參照專利文獻1 )。 〔先前技術文獻〕 〔專利文獻〕 -5- 201246291 專利文獻1:日本特開2003-64478號公報 【發明內容】 〔發明所欲解決之問題〕 如此地在將排氣導入於卸載室之際，使排氣噴至基板 時，會有因其氣流使基板變形（震動）而發生傷痕或裂痕 之問題。專利文獻1之裝置中，由於以重厚的基板作爲處 理對象，因此即使將排氣噴至基板或許也不成問題，但例 如基板之厚度越薄，並且基板越大型化，這樣的問題則越 容易產生。更且，例如，即使爲對於玻璃基板噴出排氣也 不成問題之情況，例如將排氣噴至砂基板等之結晶系的基 板時會有產生傷痕或裂痕的問題之虞。 如此的問題，係可藉由控制被導入於卸載室的排氣之 流速來解決，但會有產能降低而生產性大幅地降低之問題 〇 本發明，係有鑑於如此的情況而完成者，其目的係提 供一種不會使產能降低並可有效地抑制基板的傷痕或裂痕 之真空處理裝置。 〔用以解決問題之手段〕 解決上述問題之本發明的第1樣態，係在於：具備有 ··以真空狀態處理基板之真空處理室、及用以將在該真空 處理室被處理後之基板搬出於外部之卸載室，之真空處理 裝置，其特徵爲：上述基板，係在該基板之外周部藉由基 -6- 201246291 板保持器支承之狀態下從上述真空處理室被搬運至上述卸 載室，而在上述卸載室內，以與被搬運至上述卸載室內的 基板之表面相對向而覆蓋該基板之方式設置有：用以限制 從氣體源供給之排氣的流動之整流板’並且與上述整流板 之表面相對向而設置有：用以將排氣導入於該卸載室內之 導入口。 如此的第1樣態中，即使以較快的流速將排氣從導入 口導入於卸載室，排氣也會藉由衝撞於整流板而流速變慢 Ο 之後流至基板的表面附近。因此，可控制因排氣之流動（ 氣流）所導致的基板之變形（震動）。 本發明的第2樣態，係在於：如第1樣態之真空處理裝 置，其中，將上述整流板，與上述基板之兩面分別相對向 而設置，且將上述導入口，與各整流板分別相對向而設置 〇 如此的第2樣態中，由於排氣以大致均等的流速流動 於基板的兩面側，因此即使藉由氣流對於基板施予壓力之 情況時，也會在基板的兩面產生相同程度之壓力。因此， 可更確實地控制因排氣之流動（氣流）所導致的基板之變 形（震動）。 本發明的第3樣態，係在於：如第1或2樣態之真空處 理裝置，其中，在上述整流板之外周部，設置有朝向上述 基板側傾斜之簷部。 如此的第3樣態中，將流入於基板的表面附近之排氣 的流速更進一步減速。 -7- 201246291 本發明的第4樣態，係在於：如第1、2或3樣態之真空 處理裝置，其中，在上述基板保持器，保持有複數片上述 基板，且在上述整流板，於與上述基板間相對向之位置設 置有疏通孔。 如此的第4樣態中，即使使用較大型的基板保持器之 情況時，也由於將複數個各基板暴露於大致均等的流速之 排氣，因此可更確實地控制因氣流所導致的基板之變形（ 震動）。 〔發明之效果〕 根據如此的本發明之真空處理裝置，在將卸載室回復 到大氣壓之際，不會使產能降低而將排氣導入於卸載室內 ，且可有效地抑制基板的傷痕或裂痕之發生。例如，即使 爲較易破裂之結晶系的基板亦可良好地進行處理。 【實施方式】 〔發明之實施形態〕 以下’參照圖面而詳細說明關於本發明之實施形態。 如第1圖所示，本實施形態之成膜裝置1 〇，係所謂管 道方式之成膜裝置’從保持基板S之基板保持器1丨的搬運 方向上游側（圖中左側）依序地具備有：裝載鎖定室1 2、 加熱室13、真空成膜室（真空處理室）14 '搬運室15、以 及卸載室16。並且在裝載鎖定室12之上游側及卸載室16之 下游側、以及在裝載鎖定室1 2與加熱室1 3、真空成膜室1 4 -8- 201246291 、搬運室1 5之間分別設置有閘閥1 7，且裝載鎖定室1 2、加 熱室13、真空成膜室14、搬運室15及卸載室16係分別具備 有未圖示之排氣手段，可使內部保持於真空狀態。 如此的成膜裝置10中，首先打開裝載鎖定室12的上游 側之閘閥17而將固定有基板S之基板保持器1 1搬運至裝載 鎖定室12，且在關閉閘閥17而將裝載鎖定室12予以排氣之 後，打開裝載鎖定室12的下游側之閘閥17而將基板保持器 0 11搬運至加熱室13。在加熱室13中藉由各種加熱器（例如 ，套筒式加熱器）將被固定在基板保持器1 1之基板S加熱 到預定溫度。之後，將基板保持器11搬運至真空成膜室14 內，而藉由濺鍍在基板S之表面形成薄膜。成膜後，基板 保持器11係經由搬運室15而被搬運至卸載室16。詳細後述 之，之後，將排氣導入於卸載室1 6而將卸載室1 6回復到大 氣壓。並且那時，也有時藉由排氣來冷卻基板S。接著， 卸載室1 6回復到大氣壓之後，從卸載室1 6的下游側之閘閥 Q 17將基板保持器11取出至外部。 於此，本實施形態之成膜裝置10中，在基板保持器11 固定有成爲處理對象之複數片基板S。藉由將該基板保持 器11從裝載鎖定室12到卸載室16依序地搬運，而可將複數 片之基板S —次地處理。 基板保持器π，係如第2圖及第3圖所示，形成有可將 各基板S收容之凹部18，且在該凹部18之底面形成有讓基 板S的表面露出之貫通孔19。因此各基板S，係在只有外周 部抵接於凹部1 8的底面之狀態下被保持於基板保持器1 1。 201246291 又，本實施形態之基板保持器11，係保持複數片之基板s 者，但當然亦可爲保持1片之基板者。 又，在成膜裝置10內，沿著基板保持器11之搬運方向 而以預定之間隔配置有可將複數個滾子20固定之軸21。在 基板保持器1 1固定有一對之軌條構件22，且基板保持器i i 係夾介該軌條構件22而被載置於滾子20上。在滾子20 (軸 21)連接有未圖示之馬達，利用該馬達而使滾子20(軸21 )旋轉，藉此則可將基板保持器11從裝載鎖定室12到卸載 室16連續地搬運。 又，將如此之基板保持器11搬運至卸載室16時，如上 述地會將排氣導入於卸載室16內而將卸載室16內回復到大 氣壓。此時，藉由排氣之流動（氣流），可能使基板S變 形而於基板S產生傷痕或裂痕。如上述地，在各基板S之外 周部抵接於凹部1 8的底面部之狀態下被保持於基板保持器 1 1時，即基板保持器1 1具備有貫通孔1 9時，藉由氣流容易 使基板S發生變形，且與其伴隨的傷痕或裂痕也容易產生 。例如，如第4圖所示，藉由來自上方的氣流使基板S發生 往下凸之變形（翹曲）時，就會將與貫通孔的周緣部19a 相對應之部分強力地按壓於基板保持器1 1，而在該部分特 別容易發生傷痕或裂痕。又例如，在使用矽基板等之結晶 系的基板來製造太陽電池之情況時，由於基板S之厚度係 100〜3 ΟΟμιη程度極薄，因此容易產生因氣流所導致的基板 S之傷痕或裂痕之這種問題。製造太陽電池之情況時’有 時因在基板S之表面有傷痕而效率降低就會達到數％程度 -10- 201246291 ，因此抑制基板S之傷痕或裂痕係極爲重要。 因此本發明中，如以下說明地，藉由朝向被配置在卸 載室16內之整流板而導入排氣，來抑制因氣流所導致的基 板S之變形，且防止與其伴隨的基板S之傷痕或裂痕。 如第3圖所示，在卸載室1 6，於從真空成膜室1 4被搬 運的基板保持器1 1之兩面分別設置有相對向之一對整流板 23。該整流板23，係用以限制（整流）被導入至卸載室1 6 內的排氣之流動者，且由覆蓋基板保持器11的大小（覆蓋 被保持在基板保持器11之複數片基板S的大小）之平板所 構成。 接著，將用以導入排氣於卸載室16內之導入口 24，與 該等之整流板23相對向而分別設置。即，在本實施形態中 ，導入口 24係分別被設置在卸載室16之上面及下面。又， 圖示係省略，但在該等之導入口 24，透過氣體管而連接充 有排氣之氣體源。 如此的卸載室1 6之構成中，將從氣體源供給的排氣從 各導入口 24導入至卸載室16內時，如第3圖中以箭頭記號 所示，排氣就會衝撞於整流板23。藉此，排氣之流速係急 遽地變慢。之後，排氣係沿著整流板23之表面朝向整流板 23之外周部流動，並從整流板23之外側流入至基板保持器 1 1與整流板23之間。此時，被保持於基板保持器1 1之各基 板S，即使有藉由氣流而產生稍微的變形（震動）之情況 ，其變形量也極小。因此，可有效地抑制起因於氣流之基 板S的傷痕或裂痕之發生。尤其，在對於矽基板等之結晶 -11 - 201246291 系的基板進行成膜處理之情況時極爲有效。 又’因使排氣環繞整流板23之外周部而流入至基板保 持器1 1與整流板23之間的空間，故排氣係大致沿著整流板 23而流動於基板保持器1 1與整流板23之間的空間。因此’ 因氣流所導致的各基板S之變形（震動）可控制得更小’ 並可實質地防止起因於氣流之基板S的傷痕或裂痕之發生 〇 更且，本實施形態中，由於在基板保持器11之兩面側 同時設置有整流板23及導入口 24，因此排氣以大致均等的 流速流動於基板保持器1 1之兩面側。因此，即使藉由氣流 對於基板S施予稍微的壓力，也會從上下面施予同等之壓 力，而基板s之變形可控制得極小。 如以上地，根據本發明，即使以較快的流速將排氣導 入至卸載室1 6內，排氣也會藉由衝撞於整流板23而流速大 幅度地變慢。因此，不會使產能實質地降低而將卸載室1 6 內回復到大氣壓，且可有效地抑制起因於氣流之基板S的 傷痕或裂痕之發生。 於此，各導入口 24 ’係只要與整流板2 3相對向而設置 即可，其位置並未特別限定，但本實施形態中，係作成使 各導入口 24分別設置在與整流板23之中央部相對向之位置 。藉此，在基板保持器1 1與整流板2 3之間，排氣遍及整流 板之周方向而以大致均等的流速流入。藉此’可更有效地 抑制起因於氣流之基板S的傷痕或裂痕之發生。更且，對 於藉由排氣來冷卻各基板S之情況’複數片之各基板S可冷 -12 - 201246291 卻至大致均等的溫度。 又，上述之實施形態中，雖舉例說明由平板所構成之 整流板23，但整流板23之形狀並非被限定於此。例如，如 第5圖所示，亦可在整流板23之外周部，設置朝向卸載室 16的上下方向中央部傾斜之簷部25。藉此，流入至基板保 持器1 1與整流板2 3之間的排氣之流速則變得更慢，並可更 進一步地抑制起因於氣流之基板S的傷痕或裂痕之發生。 又，對於整流板23，如第6圖及爲第6圖的A-A’截面圖 〇 之第7圖所示，亦可設置複數個疏通孔26。在整流板23設 置疏通孔26之位置並未特別被限定，但設置在與各基板S 間相對向之位置較爲理想。要是將疏通孔26與基板S相對 向而設置時，藉由流入至疏通孔26之排氣的壓力而有可能 基板S會大爲變形之緣故。 如此地藉由在整流板23設置疏通孔26，即使例如隨著 〇 基板S之大型化而整流板23變得大型化之情況時’亦可以 大致均等的流速將排氣流入至基板保持器11之中央部及外 周部。 又，疏通孔26’亦可遍及整流板23之全面而以大致均 等的間隔來設置’但以越靠近中央部側而疏通孔2 6之間隔 越窄之方式來作成較爲理想。或者亦可以將疏通孔26遍及 整流板2 3之全面而以大致均等的間隔來設置’且越靠近中 央部側而將疏通孔2 6之直徑變得越大之方式來作成。藉此 ，可將排氣大致均等地流動於卸載室1 6內整體’且即使例 如藉由排氣來冷卻基板S之情況’亦可大致均等地冷卻各 -13- 201246291 基板S。 又，上述之實施形態中，係與如此的整流板2 3相對向 而分別設置一個導入口 24，但導入口 24之數量係並未特別 被限定，亦可對於一片整流板23設置複數個導入口 24。 更且，上述之實施形態中，係將導入口 24分別設置在 基板保持器11之兩面側，但導入口 24亦可只被設置在基板 保持器1 1之單面側。即使作爲如此之結構’亦可抑制起因 於排氣流動之基板S的傷痕或裂痕之發生。 以上，說明了關於本發明之實施形態，但當然，本發 明係並非被限定於上述之實施形態，在不脫離其主旨之範 圍可適當變更。 例如，上述之實施形態中，係舉例說明了作爲基板保 持器11來保持複數片的基板S之結構，但當然，基板保持 器1 1亦可爲保持1片的基板s者。又例如，上述之實施形態 中，係舉例說明了將基板S以橫放之狀態進行搬運之橫型 的成膜裝置，但本發明，當然亦可採用於縱型的成膜裝置 (真空處理裝置）。 【圖式簡單說明】 第1圖，係顯示本發明之成膜裝置的整體結構之槪略 圖。 第2圖，係顯示本發明之含有基板保持器之成膜裝置 的搬運系之槪略立體圖。 第3圖，係顯示本發明之卸載室的槪略結構之截面圖 -14- 201246291 第4圖，係顯示基板的變形狀態之截面圖。 第5圖，係顯示本發明之整流板的變形例之截面圖 第6圖，係顯示本發明之整流板的變形例之平面圖 第7圖，係顯示本發明之整流板的變形例之截面圖 【主要元件符號說明】 10 :成膜裝置 1 1 :基板保持器 1 2 :裝載鎖定室 1 3 :加熱室 1 4 :真空成膜室 1 5 :搬運室 1 6 :卸載室 1 7 :閘閥 1 8 :凹部 1 9 :貫通孔 2 0 :滾子 21 :軸 22 :軌條構件 23 :整流板 24 :導入口 2 5 :簷部 2 6 :疏通孔 -15- 201246291 S :基板 -16-201246291 SUMMARY OF THE INVENTION Technical Field The present invention relates to a vacuum processing apparatus including a vacuum processing chamber for processing a substrate in a vacuum state. [Prior Art] Conventionally, various vacuum crucible processing apparatuses have been used in, for example, a semiconductor manufacturing process. As an example of the vacuum processing apparatus, a film forming apparatus including a vacuum processing chamber for forming a film by a sputtering method, a vapor deposition method, or the like can be given. Further, the film forming apparatus is provided with an unloading chamber for transporting the substrate formed in the vacuum processing chamber to the outside. The unloading chamber is provided to maintain the vacuum processing chamber in a vacuum so as not to communicate with the atmosphere. Specifically, the substrate formed in the vacuum processing chamber is transported from the vacuum processing chamber to the unloading chamber in the vacuum state, and after the vacuum processing chamber is closed, the unloading chamber is returned to the atmospheric pressure to take out the substrate. Q Here, when the unloading chamber is returned to the atmospheric pressure, the vacuum is gradually broken by introducing the so-called exhaust gas into the unloading chamber. Further, the exhaust system introduced into the unloading chamber may also function to cool the substrate. For example, in the unloading chamber, a vent pipe is provided along the width direction of the substrate to be fed, and a plurality of discharge holes of the vent pipe provided along the longitudinal direction of the substrate are ejected to the center in the height direction of the substrate. Some techniques are known (refer to Patent Document 1). [PRIOR ART DOCUMENT] [Patent Document] - 5 - 201246291 Patent Document 1: JP-A-2003-64478 [Disclosure] [Problems to be Solved by the Invention] When the exhaust gas is introduced into the unloading chamber as described above, When the exhaust gas is sprayed onto the substrate, there is a problem that the substrate is deformed (vibrated) due to the air flow, and scratches or cracks occur. In the apparatus of Patent Document 1, since a heavy substrate is used as a processing target, it may not be a problem even if the exhaust gas is sprayed onto the substrate. However, for example, the thinner the thickness of the substrate and the larger the size of the substrate, the more likely such a problem arises. . Further, for example, even if the exhaust gas is ejected to the glass substrate, there is no problem. For example, when the exhaust gas is sprayed onto a crystal substrate such as a sand substrate, there is a problem that scratches or cracks may occur. Such a problem can be solved by controlling the flow rate of the exhaust gas introduced into the unloading chamber, but there is a problem that the productivity is lowered and the productivity is largely lowered. The present invention has been completed in view of such circumstances. It is an object of the invention to provide a vacuum processing apparatus which does not reduce the productivity and can effectively suppress the flaws or cracks of the substrate. [Means for Solving the Problem] According to a first aspect of the present invention, the present invention provides a vacuum processing chamber for processing a substrate in a vacuum state and for processing the vacuum processing chamber. A vacuum processing apparatus for transporting a substrate to an external unloading chamber, wherein the substrate is transported from the vacuum processing chamber to the outer peripheral portion of the substrate while being supported by a base-6-201246291 plate holder An unloading chamber in which a rectifying plate for restricting the flow of exhaust gas supplied from a gas source is disposed in such a manner as to cover the substrate opposite to the surface of the substrate conveyed into the unloading chamber; and The surface of the rectifying plate is oppositely provided with an inlet for introducing the exhaust gas into the unloading chamber. In such a first aspect, even if the exhaust gas is introduced into the unloading chamber from the inlet port at a relatively high flow rate, the exhaust gas flows to the vicinity of the surface of the substrate by colliding with the rectifying plate and the flow rate becomes slow. Therefore, deformation (vibration) of the substrate due to the flow (air flow) of the exhaust gas can be controlled. According to a second aspect of the present invention, in the vacuum processing apparatus of the first aspect, the rectifying plate is provided to face the both surfaces of the substrate, and the inlet port and each of the rectifying plates are respectively In the second aspect in which the opposite direction is provided, since the exhaust gas flows on both sides of the substrate at a substantially uniform flow velocity, even when a pressure is applied to the substrate by the air current, the same is generated on both sides of the substrate. The pressure of the degree. Therefore, the deformation (vibration) of the substrate due to the flow (air flow) of the exhaust gas can be more surely controlled. According to a third aspect of the present invention, in the vacuum processing apparatus of the first or second aspect, the outer peripheral portion of the rectifying plate is provided with a crotch portion inclined toward the substrate side. In the third aspect as described above, the flow velocity of the exhaust gas flowing in the vicinity of the surface of the substrate is further decelerated. The fourth aspect of the present invention is the vacuum processing apparatus according to the first, second or third aspect, wherein the substrate holder holds a plurality of the substrates, and the rectifying plate is A dredging hole is provided at a position opposite to the substrate. In such a fourth aspect, even when a large substrate holder is used, since a plurality of substrates are exposed to exhaust gas having a substantially uniform flow velocity, the substrate due to the air flow can be more reliably controlled. Deformation (vibration). [Effects of the Invention] According to the vacuum processing apparatus of the present invention, when the unloading chamber is returned to the atmospheric pressure, the exhaust gas is introduced into the unloading chamber without reducing the productivity, and the flaws or cracks of the substrate can be effectively suppressed. occur. For example, a substrate which is a crystal which is more easily broken can be handled well. [Embodiment] [Embodiment of the Invention] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. As shown in Fig. 1, the film forming apparatus 1 of the present embodiment is provided in order from the upstream side (the left side in the drawing) of the substrate holder 1 of the holding substrate S in the conveyance direction of the substrate holder 1 There are: a load lock chamber 1 2, a heating chamber 13, a vacuum film forming chamber (vacuum processing chamber) 14', a transfer chamber 15, and an unloading chamber 16. And between the upstream side of the load lock chamber 12 and the downstream side of the unloading chamber 16, and between the load lock chamber 12 and the heating chamber 13, the vacuum film forming chamber 1 4 -8 - 201246291, and the transport chamber 15 The gate valve 17 and the load lock chamber 1 2, the heating chamber 13, the vacuum film forming chamber 14, the transfer chamber 15, and the unloading chamber 16 are each provided with an exhaust means (not shown), and the inside can be maintained in a vacuum state. In the film forming apparatus 10 as described above, the gate valve 17 on the upstream side of the load lock chamber 12 is first opened to transport the substrate holder 1 1 to which the substrate S is fixed to the load lock chamber 12, and the lock lock chamber 12 is to be closed when the gate valve 17 is closed. After the exhaust is exhausted, the gate valve 17 on the downstream side of the load lock chamber 12 is opened to transport the substrate holder 0 11 to the heating chamber 13. The substrate S fixed to the substrate holder 1 1 is heated to a predetermined temperature by a heater (e.g., a sleeve heater) in the heating chamber 13. Thereafter, the substrate holder 11 is transferred into the vacuum film forming chamber 14, and a thin film is formed on the surface of the substrate S by sputtering. After the film formation, the substrate holder 11 is transported to the unloading chamber 16 via the transfer chamber 15. As will be described in detail later, the exhaust gas is introduced into the unloading chamber 16 to return the unloading chamber 16 to atmospheric pressure. And at that time, the substrate S is sometimes cooled by the exhaust. Next, after the unloading chamber 16 returns to the atmospheric pressure, the substrate holder 11 is taken out to the outside from the gate valve Q 17 on the downstream side of the unloading chamber 16. In the film forming apparatus 10 of the present embodiment, a plurality of substrates S to be processed are fixed to the substrate holder 11. By sequentially transporting the substrate holder 11 from the load lock chamber 12 to the unloading chamber 16, the plurality of substrates S can be processed in a secondary manner. As shown in Figs. 2 and 3, the substrate holder π is formed with a recess 18 in which each substrate S can be accommodated, and a through hole 19 for exposing the surface of the substrate S is formed on the bottom surface of the recess 18. Therefore, each of the substrates S is held by the substrate holder 1 1 in a state where only the outer peripheral portion abuts against the bottom surface of the concave portion 18. 201246291 Further, the substrate holder 11 of the present embodiment is a substrate s holding a plurality of sheets, but it is of course possible to hold one substrate. Further, in the film forming apparatus 10, a shaft 21 capable of fixing a plurality of rollers 20 is disposed at predetermined intervals along the conveyance direction of the substrate holder 11. A pair of rail members 22 are fixed to the substrate holder 1 1 , and the substrate holder i i is placed on the roller 20 via the rail member 22 . A motor (not shown) is connected to the roller 20 (shaft 21), and the roller 20 (shaft 21) is rotated by the motor, whereby the substrate holder 11 can be continuously moved from the load lock chamber 12 to the unloading chamber 16 Handling. Further, when the substrate holder 11 is transported to the unloading chamber 16, the exhaust gas is introduced into the unloading chamber 16 as described above, and the inside of the unloading chamber 16 is returned to the atmospheric pressure. At this time, by the flow of the exhaust gas (air flow), the substrate S may be deformed to cause scratches or cracks in the substrate S. As described above, when the outer peripheral portion of each of the substrates S is held by the substrate holder 1 1 in a state in which the outer peripheral portion of the substrate S is in contact with the bottom surface portion of the concave portion 18, that is, when the substrate holder 1 1 is provided with the through hole 19, the airflow is performed by the airflow. It is easy to deform the substrate S, and the accompanying flaws or cracks are also likely to occur. For example, as shown in Fig. 4, when the substrate S is deformed (warped) by the airflow from the upper side, the portion corresponding to the peripheral edge portion 19a of the through hole is strongly pressed against the substrate. The device 1 is particularly prone to scars or cracks in this portion. Further, for example, when a solar cell is manufactured using a crystal-based substrate such as a ruthenium substrate, since the thickness of the substrate S is extremely thin, the thickness of the substrate S is extremely small, so that the flaw or crack of the substrate S due to the air flow is likely to occur. This kind of problem. In the case of manufacturing a solar cell, sometimes there is a scratch on the surface of the substrate S, and the efficiency is lowered to several tens of degrees -10- 201246291. Therefore, it is extremely important to suppress the flaw or crack of the substrate S. Therefore, in the present invention, as described below, by introducing the exhaust gas toward the rectifying plate disposed in the unloading chamber 16, the deformation of the substrate S due to the airflow is suppressed, and the scar of the substrate S accompanying the same or crack. As shown in Fig. 3, in the unloading chamber 16, respectively, a pair of opposing rectifying plates 23 are provided on both surfaces of the substrate holder 1 1 transported from the vacuum film forming chamber 14. The rectifying plate 23 is for restricting (rectifying) the flow of the exhaust gas introduced into the unloading chamber 16 and covering the substrate holder 11 by a size (covering a plurality of substrates S held by the substrate holder 11) The size of the tablet is composed of. Next, the introduction port 24 for introducing the exhaust gas into the unloading chamber 16 is provided to face the rectifying plates 23, respectively. That is, in the present embodiment, the introduction ports 24 are provided on the upper surface and the lower surface of the unloading chamber 16, respectively. Further, although the illustration is omitted, the inlet port 24 is connected to a gas source filled with exhaust gas through a gas pipe. In the configuration of the unloading chamber 16 as described above, when the exhaust gas supplied from the gas source is introduced into the unloading chamber 16 from each of the introduction ports 24, the exhaust gas collides with the rectifying plate as indicated by an arrow mark in FIG. twenty three. Thereby, the flow rate of the exhaust gas is rapidly slowed down. Thereafter, the exhaust system flows toward the outer peripheral portion of the rectifying plate 23 along the surface of the rectifying plate 23, and flows from the outer side of the rectifying plate 23 to between the substrate holder 1 1 and the rectifying plate 23. At this time, the respective substrates S held by the substrate holder 1 1 have a small amount of deformation (vibration) due to the air flow, and the amount of deformation is extremely small. Therefore, the occurrence of flaws or cracks in the substrate S due to the air flow can be effectively suppressed. In particular, it is extremely effective in the case of performing a film formation treatment on a substrate of a crystal -11 - 201246291 system such as a ruthenium substrate. Further, since the exhaust gas flows into the space between the substrate holder 1 1 and the rectifying plate 23 around the outer peripheral portion of the rectifying plate 23, the exhaust system flows along the rectifying plate 23 to the substrate holder 1 1 and rectifies. The space between the plates 23. Therefore, the deformation (vibration) of each substrate S due to the air flow can be controlled to be smaller, and the occurrence of flaws or cracks in the substrate S caused by the air flow can be substantially prevented, and in the present embodiment, Since the rectifying plate 23 and the introduction port 24 are provided on both sides of the holder 11 at the same time, the exhaust gas flows on both sides of the substrate holder 1 1 at a substantially uniform flow rate. Therefore, even if a slight pressure is applied to the substrate S by the air current, the same pressure is applied from the upper and lower sides, and the deformation of the substrate s can be controlled to be extremely small. As described above, according to the present invention, even if the exhaust gas is introduced into the unloading chamber 16 at a relatively high flow rate, the exhaust gas is greatly slowed down by the collision with the rectifying plate 23. Therefore, the inside of the unloading chamber 16 is returned to the atmospheric pressure without substantially lowering the productivity, and the occurrence of the flaw or crack of the substrate S due to the air flow can be effectively suppressed. Here, each of the introduction ports 24' may be provided so as to face the rectifying plate 23, and the position thereof is not particularly limited. However, in the present embodiment, each of the introduction ports 24 is provided in the rectifying plate 23, respectively. The central part is relatively opposite. Thereby, between the substrate holder 1 1 and the rectifying plate 23, the exhaust gas flows in at substantially the same flow velocity throughout the circumferential direction of the rectifying plate. Thereby, the occurrence of scratches or cracks in the substrate S caused by the air flow can be more effectively suppressed. Further, in the case where the respective substrates S are cooled by the exhaust gas, the respective substrates S of the plurality of sheets may be cooled to a substantially uniform temperature. Further, in the above-described embodiment, the rectifying plate 23 composed of a flat plate is exemplified, but the shape of the rectifying plate 23 is not limited thereto. For example, as shown in Fig. 5, a crotch portion 25 that is inclined toward the center portion of the unloading chamber 16 in the vertical direction may be provided on the outer peripheral portion of the rectifying plate 23. Thereby, the flow velocity of the exhaust gas flowing between the substrate holder 1 1 and the rectifying plate 2 3 becomes slower, and the occurrence of flaws or cracks in the substrate S due to the air flow can be further suppressed. Further, as for the rectifying plate 23, as shown in Fig. 6 and Fig. 7 of the A-A' sectional view of Fig. 6, a plurality of dredging holes 26 may be provided. The position at which the rectifying plate 23 is provided with the dredging hole 26 is not particularly limited, but it is preferably disposed at a position opposed to each of the substrates S. If the dredging hole 26 is provided to face the substrate S, the substrate S may be greatly deformed by the pressure of the exhaust gas flowing into the dredging hole 26. By providing the dredging holes 26 in the rectifying plate 23, the rectifying plate 23 can be made to flow into the substrate holder 11 at substantially equal flow rates even when the rectifying plate 23 is enlarged, for example, as the size of the crucible substrate S increases. The central part and the outer part. Further, the dredging holes 26' may be provided at substantially equal intervals throughout the entire rectifying plate 23, but it is preferable to be narrower as the interval between the through holes 26 is narrower toward the center portion side. Alternatively, the dredging hole 26 may be formed over the entire surface of the flow regulating plate 23 at substantially equal intervals, and the diameter of the dredging hole 26 may be made larger as it approaches the center portion side. Thereby, the exhaust gas can be flowed substantially uniformly in the entire interior of the unloading chamber 16 and the substrate S can be cooled evenly by exhausting, and the respective substrates 13 can be cooled substantially uniformly. Further, in the above-described embodiment, one introduction port 24 is provided to face each of the rectifying plates 23, but the number of the introduction ports 24 is not particularly limited, and a plurality of introductions may be provided for one rectifying plate 23. Mouth 24. Further, in the above-described embodiment, the introduction ports 24 are provided on both sides of the substrate holder 11, but the introduction port 24 may be provided only on one side of the substrate holder 11. Even in such a configuration, the occurrence of flaws or cracks in the substrate S due to the exhaust gas flow can be suppressed. The embodiments of the present invention have been described above, but the present invention is not limited to the above-described embodiments, and may be appropriately modified without departing from the scope of the invention. For example, in the above-described embodiment, the configuration in which the plurality of substrates S are held as the substrate holder 11 has been exemplified. However, the substrate holder 1 1 may be one in which one substrate s is held. Further, for example, in the above-described embodiment, a horizontal film forming apparatus that transports the substrate S in a horizontal state is exemplified, but the present invention can of course be applied to a vertical film forming apparatus (vacuum processing apparatus). ). BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the overall structure of a film forming apparatus of the present invention. Fig. 2 is a schematic perspective view showing a conveyance system of a film forming apparatus including a substrate holder of the present invention. Fig. 3 is a cross-sectional view showing a schematic structure of the unloading chamber of the present invention - 14 - 201246291 Fig. 4 is a cross-sectional view showing a deformed state of the substrate. Fig. 5 is a cross-sectional view showing a modification of the rectifying plate of the present invention. Fig. 6 is a plan view showing a modification of the rectifying plate of the present invention. Fig. 7 is a cross-sectional view showing a modification of the rectifying plate of the present invention. [Description of main component symbols] 10: Film forming apparatus 1 1 : Substrate holder 1 2 : Load lock chamber 1 3 : Heating chamber 1 4 : Vacuum film forming chamber 1 5 : Transfer chamber 1 6 : Unloading chamber 1 7 : Gate valve 1 8 : recess 1 9 : through hole 2 0 : roller 21 : shaft 22 : rail member 23 : rectifying plate 24 : introduction port 2 5 : crotch portion 2 6 : dredging hole -15 - 201246291 S : substrate-16-