JP5329072B2 - Processing vessel and plasma processing apparatus - Google Patents

Processing vessel and plasma processing apparatus Download PDF

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JP5329072B2
JP5329072B2 JP2007312160A JP2007312160A JP5329072B2 JP 5329072 B2 JP5329072 B2 JP 5329072B2 JP 2007312160 A JP2007312160 A JP 2007312160A JP 2007312160 A JP2007312160 A JP 2007312160A JP 5329072 B2 JP5329072 B2 JP 5329072B2
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liner
protective member
processing container
sprayed film
plasma
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JP2009140939A (en
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利洋 東条
誠治 田中
新悟 出口
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東京エレクトロン株式会社
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Abstract

A treating container and a plasma treating apparatus are provided to easily perform an exchanging operation of a protective member in a short time by including a second protective member separated from a first protective member. A side wall(101b) has a substrate carrying opening(161) of a treating container. A side wall(101c) has a door opening(163). Liners as a protective member are covered in an inner surface of the side wall. The liners(201a,201c) as a second protective member protect an inner wall surface around a corner part(161a) of both ends of the substrate carrying opening. The liners(201b,201d) as a first protective member protect an inner wall surface around a straight part(161b) of a center of the substrate carrying opening. Plasma is generated inside a plasma etching apparatus.

Description

  The present invention relates to a processing container that accommodates an object to be processed when plasma processing is performed on an object to be processed such as a glass substrate for a flat panel display (FPD), and a plasma processing apparatus including the processing container.

  In an FPD manufacturing process typified by a liquid crystal display (LCD), various processes such as etching and film formation are performed on an object to be processed such as a glass substrate under vacuum. In order to perform the processing using plasma, a plasma processing apparatus including a processing container that can be evacuated is used.

  In the plasma processing apparatus, the inner surface of a metal processing container may be damaged by the action of plasma or corrosive gas. For this reason, for example, the anodizing treatment (alumite treatment) is applied to the aluminum processing vessel main body. In order to prevent damage to the processing container body, a protective member (liner) is also provided on the inner wall surface of the processing container. As a technique related to a liner, for example, Patent Document 1 proposes that a liner member that can be attached and detached is provided along an inner wall surface of a transfer port formed in a processing container.

  However, plasma distribution and gas flow are unevenly distributed inside the processing vessel of the plasma processing apparatus. For this reason, in a place where the plasma or gas flow is likely to concentrate inside the processing vessel, the liner is locally consumed by the action of plasma or corrosive gas. When such local wear occurred, the life of the liner was shortened and the liner had to be replaced in a short period of time.

International Publication WO2002 / 29877

  Recently, there is an increasing demand for a large-sized FPD substrate, and there is a case where a huge substrate having a side of more than 2 m is processed. Corresponding to the increase in size of the substrate, the processing container is also increased in size. In order to protect such a large processing container, the liner is also enlarged. When local wear on a large liner progressed, it was necessary to replace the entire liner in a short cycle. For this reason, the work time and the cost of parts related to the liner are increased, which is a heavy burden.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a processing container that can easily replace a protective member that protects the inner surface of the processing container in a plasma processing apparatus and that can suppress the cost of components.

A processing container according to the present invention is a processing container that accommodates an object to be processed and performs plasma processing,
A container body having an opening,
A protective member for protecting the container body from damage caused by plasma and / or corrosive gas,
The protective member includes a first protective member disposed along an inner wall surface of the container body;
Around the opening portion, a second protection member that is detachably disposed separately from the first protection member;
have.

In the processing container of the present invention, the first protective member has an opening having a size corresponding to an opening portion of the container body, and is directly attached to the container body.
The second protection member may be formed in a smaller piece than the first protection member, and may be mounted on the first protection member in an overlapping manner.

In the processing container of the present invention, a ceramic sprayed film having plasma erosion resistance may be provided on the surface of the second protective member. In this case, the ceramic sprayed film may be a sprayed film of Y 2 O 3 or YF 3 . Further, the surface of the first protective member may be provided with an oxide film or Al 2 O 3 sprayed coating by anodized.

In the processing container of the present invention, the protection member further includes a cylindrical third protection member disposed along the inner wall surface of the opening portion,
The end portion of the third protection member and the end portion of the first protection member are joined in a fitting structure in which a boundary line between both members in a cross section of the joining portion is formed in a non-linear manner. The second protective member may cover the joint portion.

In the processing container of the present invention, the protection member further includes a cylindrical third protection member disposed along the inner wall surface of the opening portion,
The third protection member has a flange portion protruding outward at one end portion thereof,
The first protective member has a stepped portion at the opening end thereof.
The third protective member and the first protective member are joined together by fitting the flange portion and the stepped portion, and the joint portion is covered by the second protective member. Good. In this case, a ceramic sprayed film having plasma erosion resistance may be provided on the surface of the third protective member, and the ceramic sprayed film may be a sprayed film of Y 2 O 3 or YF 3 .

  In the processing container of the present invention, the second protection member may have an L-shaped cross section.

Moreover, the processing container of this invention WHEREIN: The said protection member may further have the 4th protection member arrange | positioned on the said 2nd protection member. In this case, a ceramic sprayed film having plasma erosion resistance may be provided on the surface of the fourth protective member, and the ceramic sprayed film may be a sprayed film of Y 2 O 3 or YF 3 .

  Further, in the processing container of the present invention, the opening portion of the container body is a wide loading / unloading port for loading / unloading the substrate, and the second protection member is disposed around both ends of the loading / unloading port. Also good.

  In the processing container of the present invention, the opening part of the container body may be an opening for a window.

The processing container of the present invention includes an exhaust port disposed in the container body,
A rectifying plate for adjusting the gas flow to the exhaust port;
A rectifying plate protection member that is connected to an end of the rectifying plate and protects the rectifying plate from damage caused by a gas flow toward the exhaust port;
May be further provided. In this case, a ceramic sprayed film having plasma erosion resistance may be provided on the surface of the current plate protection member, and the ceramic sprayed film may be a sprayed film of Y 2 O 3 or YF 3 .

  The plasma processing apparatus of this invention is a plasma processing apparatus provided with the said processing container.

  According to the processing container of the present invention, as a protective member for protecting the container main body from damage caused by plasma and / or corrosive gas, the first protective member disposed along the inner wall surface of the container main body and the plasma or gas In the periphery of the opening portion of the container main body where the flow tends to concentrate, the second protective member is provided so as to be detachable from the first protective member. Thereby, even when local wear occurs in the second protective member, only the second protective member needs to be replaced. Therefore, it is possible to easily perform the replacement operation of the protective member, which has been a heavy burden in the past, in a short time, and to suppress the replacement frequency and the cost of replacement parts.

[First Embodiment]
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Here, the substrate processing system including the processing container according to the first embodiment of the present invention will be described as an example. FIG. 1 is a perspective view schematically showing a vacuum processing system 100 as a substrate processing system, and FIG. 2 is a plan view schematically showing the inside with a lid (not shown) of each chamber opened. is there. The vacuum processing system 100 has a multi-chamber structure having a plurality of process chambers 1a, 1b, and 1c. The vacuum processing system 100 is configured as a processing system for performing plasma processing on a glass substrate (hereinafter simply referred to as “substrate”) S for FPD, for example. Examples of the FPD include a liquid crystal display (LCD), an electro luminescence (EL) display, a plasma display panel (PDP), and the like.

  In the vacuum processing system 100, a plurality of large chambers are connected in a cross shape. A transfer chamber 3 is disposed in the center, and three process chambers 1a, 1b, and 1c for performing plasma processing on the substrate S are disposed adjacent to the three side surfaces thereof. A load lock chamber 5 is disposed adjacent to the remaining one side surface of the transfer chamber 3. These three process chambers 1a, 1b, and 1c, the transfer chamber 3, and the load lock chamber 5 are all configured as vacuum chambers. An opening (not shown) is provided between the transfer chamber 3 and each process chamber 1a, 1b, 1c, and a gate valve 7a having an opening / closing function is provided in the opening. A gate valve 7 b is provided between the transfer chamber 3 and the load lock chamber 5. The gate valves 7a and 7b hermetically seal between the chambers in the closed state and allow the substrate S to be transferred by communicating between the chambers in the open state. Further, a gate valve 7c is also provided between the load lock chamber 5 and the outside air atmosphere so that the airtightness of the load lock chamber 5 is maintained in the closed state and the inside and outside of the load lock chamber 5 are opened. The substrate S can be transferred between the two.

  Two cassette indexers 9 a and 9 b are provided outside the load lock chamber 5. On each cassette indexer 9a, 9b, cassettes 11a, 11b for accommodating the substrates S are placed. In each cassette 11a, 11b, substrates S are arranged in multiple stages at intervals in the vertical direction. Moreover, each cassette 11a, 11b is comprised by the raising / lowering mechanism parts 13a, 13b so that raising / lowering is possible respectively. In this embodiment, for example, an unprocessed substrate is accommodated in the cassette 11a, and a processed substrate is accommodated in the other cassette 11b.

  A transport device 15 for transporting the substrate S is provided between the two cassettes 11a and 11b. The transport device 15 includes a fork 17a and a fork 17b as substrate holders provided in two upper and lower stages, a drive unit 19 that supports the fork 17a and the fork 17b so that the fork 17a and the fork 17b can be advanced, retracted, and swiveled. And a support base 21 for supporting the.

  The process chambers 1a, 1b, and 1c are configured so that their internal spaces can be maintained in a predetermined reduced pressure atmosphere (vacuum state). In each of the process chambers 1a, 1b, and 1c, as shown in FIG. 2, a susceptor 105 is disposed as a mounting table on which the substrate S is mounted. In each of the process chambers 1a, 1b, and 1c, with the substrate S placed on the susceptor 105, the substrate S is subjected to plasma processing such as etching processing, ashing processing, and film forming processing under vacuum conditions. It is.

  In the present embodiment, the same type of processing may be performed in the three process chambers 1a, 1b, and 1c, or different types of processing may be performed for each process chamber. The number of process chambers is not limited to three and may be four or more.

  The transfer chamber 3 is configured to be able to be maintained in a predetermined reduced pressure atmosphere, similarly to the process chambers 1a to 1c which are vacuum processing chambers. As shown in FIG. 2, a transfer device 23 is disposed in the transfer chamber 3. The transport device 23 is configured to be rotatable, and includes a comb-like fork 25 that advances and retracts to transport the substrate S. Then, the substrate S is transferred between the three process chambers 1 a, 1 b, 1 c and the load lock chamber 5 by the transfer device 23.

  The transport device 23 includes transport mechanisms provided in two upper and lower stages, and is configured so that the substrates S can be taken in and out independently.

  The load lock chamber 5 is configured to be able to be maintained in a predetermined reduced pressure atmosphere, like the process chambers 1 a to 1 c and the transfer chamber 3. The load lock chamber 5 is for transferring the substrate S between the cassettes 11a and 11b in an atmospheric atmosphere and the transfer chamber 3 in a reduced pressure atmosphere. The load lock chamber 5 is configured to have a small internal volume as much as possible because of the repeated atmosphere and reduced pressure atmosphere. The load lock chamber 5 is provided with substrate accommodation portions 27 in two upper and lower stages (only the upper stage is shown in FIG. 2), and in each substrate accommodation portion 27, a plurality of buffers 28 supporting the substrate S are spaced apart. Is provided. The gaps between these buffers 28 are escape grooves of a comb-shaped fork (for example, fork 25). Further, a positioner 29 is provided in the load lock chamber 5 for abutting and positioning near the corners of the rectangular substrate S facing each other.

  As shown in FIG. 2, each component of the vacuum processing system 100 is connected to and controlled by the controller 30 (not shown in FIG. 1). The control unit 30 includes a controller 31 including a CPU, a user interface 32, and a storage unit 33. In the vacuum processing system 100, the controller 31 controls each component such as the process chambers 1a to 1c, the transfer device 15, and the transfer device 23 in an integrated manner. The user interface 32 includes a keyboard on which a process manager manages command input in order to manage the vacuum processing system 100, a display that visualizes and displays the operating status of the vacuum processing system 100, and the like. The storage unit 33 stores a recipe in which a control program (software) for realizing various processes executed in the vacuum processing system 100 under the control of the controller 31 and processing condition data are recorded. The user interface 32 and the storage unit 33 are connected to the controller 31.

  If necessary, an arbitrary recipe is called from the storage unit 33 by an instruction from the user interface 32 and is executed by the controller 31, so that a desired process in the vacuum processing system 100 is performed under the control of the controller 31. Is done.

  Recipes such as the control program and processing condition data can be stored in a computer-readable storage medium such as a CD-ROM, a hard disk, a flexible disk, or a flash memory. Alternatively, it can be transmitted from other devices as needed via, for example, a dedicated line and used online.

Next, the operation of the vacuum processing system 100 configured as described above will be described.
First, the two forks 17 a and 17 b of the transport device 15 are driven forward and backward to receive the substrate S from the cassette 11 a that stores unprocessed substrates, and is received in the buffers 28 of the upper and lower two-stage substrate storage portions 27 of the load lock chamber 5. Place each one.

  After the forks 17a and 17b are retracted, the gate valve 7c on the atmosphere side of the load lock chamber 5 is closed. Thereafter, the inside of the load lock chamber 5 is evacuated, and the inside is depressurized to a predetermined degree of vacuum. Next, the gate valve 7 b between the transfer chamber 3 and the load lock chamber 5 is opened, and the substrate S accommodated in the substrate accommodating portion 27 of the load lock chamber 5 is received by the fork 25 of the transfer device 23.

  Next, the substrate S is carried into one of the process chambers 1 a, 1 b, and 1 c by the fork 25 of the transfer device 23 and transferred to the susceptor 105. Then, a predetermined process such as etching is performed on the substrate S in the process chambers 1a, 1b, and 1c. Next, the processed substrate S is transferred from the susceptor 105 to the fork 25 of the transfer device 23 and is unloaded from the process chambers 1a, 1b, and 1c.

  And the board | substrate S is accommodated in the cassette 11b by the conveying apparatus 15 through the load lock chamber 5 by the path | route reverse to the above. The processed substrate S may be returned to the original cassette 11a.

  Next, a processing container according to the present embodiment and a plasma etching apparatus according to an embodiment of the present invention including the processing container will be described with reference to FIGS. FIG. 3 is a cross-sectional view showing a schematic configuration of a plasma etching apparatus 200 applicable as the process chamber 1a, 1b or 1c. FIG. 4 is a diagram showing an internal configuration of the processing vessel 101 of the plasma etching apparatus 200. FIG. 5 is a horizontal sectional view showing an internal configuration of the processing container 101.

  As shown in FIG. 3, the plasma etching apparatus 200 is configured as a capacitively coupled parallel plate plasma etching apparatus that performs etching on a rectangular substrate S.

  The plasma etching apparatus 200 includes a processing vessel 101 formed into a rectangular tube shape made of aluminum, for example, whose surface is anodized (anodized). The main body (container main body) of the processing container 101 includes a bottom wall 101a, four side walls 101b, 101c, 101d, and 101e, and a lid 101f. Liners 201a to 201d as plate-shaped protective members are provided on the inner surface of the wall 101b, the liners 203a to 203c are provided on the inner surface of the wall 101c, and the liners 205a to 205c are provided on the inner surface of the wall 101d. The liners 207a to 207c are disposed on the inner surface (see FIG. 5).

  The lid 101f is configured to be opened and closed by an opening / closing mechanism (not shown). When the lid 101f is closed, the joint portion between the lid 101f and the side walls 101b, 101c, 101d, and 101e is sealed by the seal member 102, and the airtightness in the processing container 101 is maintained.

  A frame-shaped insulating member 103 is disposed at the bottom of the processing container 101. On the insulating member 103, a susceptor 105, which is a mounting table on which the substrate S can be mounted, is provided.

  The susceptor 105 that is also a lower electrode includes a base material 107. The base material 107 is formed of a conductive material such as aluminum or stainless steel (SUS). The base material 107 is disposed on the insulating member 103, and a sealing member 113 such as an O-ring is provided at a joint portion between the two members to maintain airtightness. The sealing member 114 also maintains airtightness between the insulating member 103 and the bottom wall 101a of the processing container 101. The outer periphery of the side portion of the base material 107 is surrounded by an insulating member 117. Thereby, the insulation of the side surface of the susceptor 105 is ensured, and abnormal discharge during the plasma processing is prevented.

  Above the susceptor 105, a shower head 131 that functions as an upper electrode is provided in parallel to and opposite to the susceptor 105. The shower head 131 is supported by a lid body 101 f at the top of the processing container 101. The shower head 131 has a hollow shape, and a gas diffusion space 133 is provided therein. In addition, a plurality of gas discharge holes 135 for discharging a processing gas are formed on the lower surface of the shower head 131 (the surface facing the susceptor 105). The shower head 131 is grounded and constitutes a pair of parallel plate electrodes together with the susceptor 105.

A gas inlet 137 is provided near the upper center of the shower head 131. A processing gas supply pipe 139 is connected to the gas inlet 137. A gas supply source 145 for supplying a processing gas for etching is connected to the processing gas supply pipe 139 via two valves 141 and 141 and a mass flow controller 143. As the processing gas, for example, a rare gas such as Ar gas can be used in addition to a halogen-based gas or O 2 gas.

  Exhaust ports 151 are formed at four locations at the four corners of the bottom of the processing vessel 101. An exhaust pipe 153 is connected to the exhaust port 151, and the exhaust pipe 153 is connected to the exhaust device 155. The exhaust device 155 includes a vacuum pump such as a turbo molecular pump, for example, and is configured so that the inside of the processing vessel 101 can be evacuated to a predetermined reduced pressure atmosphere.

  In addition, a substrate transfer opening 161 is provided in the side wall 101b of the processing container 101 as an opening formed through the side wall 101b. The substrate transfer opening 161 is opened and closed by a gate valve 7a (see FIGS. 1 and 2). Then, the substrate S is transferred between the adjacent transfer chambers 3 with the gate valve 7a opened (see FIGS. 1 and 2). In addition, the side walls 101c to 101e of the processing container 101 are provided with window openings 163 as openings that are formed through the side walls 101c to 101e. A transparent quartz plate 165 is attached to each window opening 163.

  A power supply line 171 is connected to the base material 107 of the susceptor 105. A high frequency power source 175 is connected to the feeder line 171 via a matching box (MB) 173. Thereby, for example, high frequency power of 13.56 MHz is supplied from the high frequency power source 175 to the susceptor 105 as the lower electrode. The power supply line 171 is introduced into the processing container through an opening 177 formed in the bottom wall 101a.

  Further, a baffle plate 181 as a rectifying plate for controlling the gas flow in the processing container 101 is provided on the side of the susceptor 105. Four baffle plates 181 are provided corresponding to the four sides of the planar susceptor 105. Each baffle plate 181 is supported substantially horizontally by an insulating wall 183 and an insulating wall 185 erected from the bottom wall 101 a of the processing vessel 101. The processing gas supplied from the gas discharge hole 135 of the shower head 131 toward the substrate S on the susceptor 105 is diffused in four directions on the surface of the substrate S, and the four bottom portions of the processing container 101 are rectified by the baffle plate 181. It is configured to exhaust while forming a gas flow toward the exhaust port 151 provided in the.

  Next, the processing operation in the plasma etching apparatus 200 configured as described above will be described. First, the substrate S, which is the object to be processed, is loaded into the processing container 101 from the transfer chamber 3 through the substrate transfer opening 161 by the fork 25 of the transfer device 23 with the gate valve 7a opened. The substrate S is transferred while being supported by the fork 25 of the transfer device 23. Then, the substrate S is delivered from the fork 25 to the susceptor 105. Thereafter, the gate valve 7a is closed, and the inside of the processing container 101 is evacuated to a predetermined degree of vacuum by the exhaust device 155.

  Next, the valve 141 is opened, and the processing gas is introduced from the gas supply source 145 into the gas diffusion space 133 of the shower head 131 through the processing gas supply pipe 139 and the gas introduction port 137. At this time, the flow rate of the processing gas is controlled by the mass flow controller 143. The processing gas introduced into the gas diffusion space 133 is further uniformly discharged to the substrate S placed on the susceptor 105 through the plurality of discharge holes 135, and the pressure in the processing container 101 becomes a predetermined value. Maintained.

  In this state, high frequency power is applied from the high frequency power supply 175 to the susceptor 105 via the matching box 173. As a result, a high-frequency electric field is generated between the susceptor 105 as the lower electrode and the shower head 131 as the upper electrode, and the processing gas is dissociated into plasma. The substrate S is etched by this plasma.

  After performing the etching process, the application of the high frequency power from the high frequency power source 175 is stopped, the gas introduction is stopped, and then the inside of the processing container 101 is decompressed to a predetermined pressure. Next, the gate valve 7 a is opened, the substrate S is transferred from the susceptor 105 to the fork 25 of the transfer device 23, and is transferred from the substrate transfer opening 161 of the processing container 101 to the transfer chamber 3. With the above operation, the etching process on the substrate S is completed.

  FIG. 4 is a view showing the inside of the processing container 101 according to the first embodiment. Here, the inner surfaces of the side wall 101b having the substrate transfer opening 161 of the processing container 101 and the side wall 101c having the window opening 163 are illustrated.

  The inner surface of the side wall 101b having the substrate transfer opening 161 is covered with liners 201a, 201b, 201c, and 201d as protective members. The liners 201a and 201c as the second protection members respectively protect the inner wall surfaces around the corner portions 161a at both ends of the substrate transfer opening 161 formed in a horizontally long (wide) shape. The liners 201b and 201d as the first protective members protect the inner wall surface around the linear portion 161b near the center of the substrate transfer opening 161 formed in a horizontally long shape.

  The plasma generated in the plasma etching apparatus 200 is more likely to concentrate on the corner portions 161a near both ends than the straight portion 161b of the substrate transfer opening 161 formed in a horizontally long shape. For this reason, when the side wall 101b is protected by a single large liner, the wear is intense around the corner portion 161a of the substrate transfer opening 161, and the progress of wear is slow around the straight portion 161b. If the liner is replaced in accordance with the wear around the corner portion 161a, the replacement frequency increases, and the cost of replacement parts also increases.

  Therefore, in the present embodiment, the protective member provided on the side plate 101b is used as the liner 201a, the liner 201c that covers the periphery of the corner portion 161a of the substrate transfer opening 161, and the liner that covers the straight portion 161b of the substrate transfer opening 161. It was divided into four parts, 201b and liner 201d. When the liners 201a and 201c that cover the corner portion 161a of the substrate transfer opening 161 are compared with the liners 201b and 201d that cover the linear portion 161b, the liners 201a and 201c are more easily damaged and the replacement cycle is shorter. With such a divided structure, it is possible to replace only the liners 201a and 201c, which are heavily consumed, separately from the liners 201b and 201d whose consumption is slower than these.

  The thickness of the liners 201a to 201d can be set within a range of 3 to 5 mm, for example. Further, the thicknesses of the liners 201a and 201c that are easily damaged by plasma may be larger than the thicknesses of the liners 201b and 201d.

As the liners 201a to 201d, for example, the same material as that of the side walls 101b to 101e constituting the processing vessel 101, for example, a surface of a base material such as aluminum, which has been subjected to alumite treatment (anodization treatment) can be used. Moreover, it is also preferable to use what formed the ceramic sprayed film which has plasma erosion tolerance on the base-material surface, such as aluminum, as liner 201a-201d. As the ceramic sprayed film having plasma erosion resistance, for example, a Y 2 O 3 sprayed film, a YF 3 sprayed film, an Al 2 O 3 sprayed film, a B 4 C sprayed film, or the like can be used. Among these, Y 2 O 3 sprayed film or YF 3 sprayed film having excellent plasma erosion resistance is more preferable.

In the present embodiment, the type of protective film (for example, an oxide film formed by alumite treatment or a ceramic sprayed film) covering the surface of each liner can be changed. For example, the liners 201a and 201c around the corner portion 161a where plasma tends to concentrate are coated with a ceramic sprayed film having high plasma erosion resistance such as a Y 2 O 3 sprayed film or a YF 3 sprayed film, Portions such as the liners 201b and 201d can be covered with an Al 2 O 3 sprayed film or an oxide film formed by anodizing. As described above, by using the liners 201a and 201c coated with the ceramic sprayed film having high plasma erosion resistance around the corner portion 161a where the plasma is likely to concentrate, the number of replacement of the subdivided liners 201a and 201c can be reduced. Can be reduced. Note that a metal or an alloy having no oxide film on the surface can be used for a portion exposed to a BCl 3 gas atmosphere where the oxidation-reduction reaction is intense.

  Since the ceramic sprayed film easily peels off when the film thickness becomes too thick, the film thickness can be set within a range of 50 μm to 200 μm, for example.

  The liners 201a to 201d are detachably attached to the side wall 101b. The method for attaching the liners 201a to 201d to the side wall 101b is not particularly limited. For example, the liners 201a to 201d may be joined to the side wall 101b by fixing means such as screws. In addition, if the electrically grounded side wall 101b and the liners 201a to 201d are not electrically connected and the liners 201a to 201d are in an electrically floating state, electric charges accumulate in them and cause abnormal discharge, Further, the stability of plasma generated in the processing container 101 may be impaired. Therefore, it is preferable to ensure conduction between the side wall 101b and the liners 201a to 201d. In order to ensure conduction between the side wall 101b and the liners 201a to 201d, a conduction member such as a shield spiral may be provided between the side wall 101b and each of the liners 201a to 201d.

  In the processing container 101, the inner surface of the side wall 101c having the window opening 163 is covered with liners 203a, 203b, and 203c as protective members. The liner 203b as the second protective member protects the inner wall surface around the window opening 163 of the side wall 101c. The liners 203a and 203b as the first protective members protect the inner wall surface of the side wall 101c where the window opening 163 is not formed.

  The plasma generated inside the plasma etching apparatus 200 tends to concentrate on the edge 163a of the window opening 163 having a corner. For this reason, when the side wall 101c is protected by a single large liner, the consumption is severe around the window opening 163, and the progress of the consumption is slow at the part away from the window opening 163. If the liner is replaced in accordance with the wear around the window opening 163, the replacement frequency increases and the cost of replacement parts also increases.

  Therefore, in the present embodiment, the protective member provided on the side wall 101c is divided into three parts: a liner 203b that covers the periphery of the window opening 163, and liners 203a and 203c that cover portions away from the window opening 163. . When the liner 203b covering the periphery of the window opening 163 and the liners 203a and 203c on both sides thereof are compared, the liner 203b is more easily damaged and the replacement cycle is shorter. With such a divided structure, it is possible to replace only the highly consumed liner 203b separately from the liners 203a and 203c whose consumption progresses slower than these.

As the liners 203a to 203c, the same material and configuration as the liners 201a to 201d can be used. For example, with respect to the liner 203b disposed around the window opening 163 where plasma tends to concentrate, a Y 2 O 3 sprayed film or a YF 3 sprayed film having excellent plasma erosion resistance is formed on the surface of a base material such as aluminum. It is preferable to use a ceramic sprayed film. On the other hand, the liners 203a and 203c provided at positions where plasma concentration is less likely to occur compared to the liner 203b can be covered with an Al 2 O 3 sprayed film or an oxide film formed by anodizing. Of course, the liners 203a to 203c may be formed with an alumite-treated oxide film as a protective film, or a ceramic sprayed film of the same material may be formed. Further, it is preferable that the liners 203a, 203b, 203c and the side wall 101c are electrically connected by a conductive member such as a shield spiral.

  Although not described, liners 205a, 205b, and 205c as protective members are provided on the side wall 101d of the processing vessel 101 in the same manner as the side wall 101c, and the liners 207a, 207b, and 207c are provided on the side wall 101e. Is deployed. The liner 205b and the liner 207b around the window opening 163 are formed to be separable from other portions.

  Further, as shown in FIG. 5, in the processing container 101 of the present embodiment, joint plates 209 as rectifying plate protection members are provided at both ends of a baffle plate 181 provided around the susceptor 105. The gas flow supplied from the shower head 131 toward the substrate S collides with the substrate S and once changes the direction of flow in a direction parallel to the substrate S, and then further lowers the exhaust near the end of the baffle plate 181. Change the direction of the flow toward the mouth 151. For this reason, the gas flow is concentrated on both ends of the baffle plate 181. Accordingly, both ends of the baffle plate 181 are more heavily consumed by corrosive gas or the like than other portions.

  Therefore, in the present embodiment, the joint plates 209 are provided at both ends of the baffle plate 181. The joint plate 209 has a flat plate shape and is connected to both ends of the baffle plate 181 by fixing means such as screws. Thus, by extending the joint plates 209 at both ends of the baffle plate 181, the deterioration speed of the baffle plate 181 main body can be slowed down. Further, when the joint plate 209 is deteriorated, only the joint plate 209 needs to be replaced. Therefore, the replacement work is easy and the cost of parts can be greatly suppressed as compared with the case where the entire baffle plate 181 is replaced.

As the baffle plate 181 and the joint plate 209, the same material as that of the liners 201a to 201d can be used. For example, with respect to the joint plate 209 provided at a site where gas flow is likely to concentrate, a ceramic sprayed film such as a Y 2 O 3 sprayed film or a YF 3 sprayed film having excellent plasma erosion resistance on the surface of a base material such as aluminum. It is preferable to use those formed. On the other hand, the surface of the baffle plate 181 can be covered with an Al 2 O 3 sprayed film or an oxide film formed by alumite treatment. Of course, both the baffle plate 181 and the joint plate 209 may be formed with an oxide film by alumite treatment as a protective film, or a ceramic sprayed film of the same material may be formed.

  As described above, in the present embodiment, the liners 201a and 201c and the liners 203b, 205b, and 207b as the second protective members are provided around the opening portion where the plasma tends to concentrate in the processing container 101. A configuration was adopted in which it was separated from the part and detachably provided. With this configuration, when the liners 201a and 201c or the liners 203b, 205b, and 207b formed on the small pieces are locally damaged, only the liners 201a and 201c or the liners 203b, 205b, and 207b need be replaced. Therefore, it is possible to easily perform the replacement operation of the liner, which has been a heavy burden in the past, in a short time, and to suppress the replacement frequency and the cost of replacement parts.

  Further, in the present embodiment, the detachable joint plates 209 are provided at both ends of the baffle plate 181 in which the gas flow tends to concentrate in the processing container 101. As a result, the baffle plate 181 can be protected to prolong the life of the components, and when the joint plate 209 is consumed, only the joint plate 209 needs to be replaced. Since the replacement work of the small piece joining plate 209 is easy, the replacement work time is short, and the cost of replacement parts can be suppressed.

[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIGS. FIG. 6 is a view showing the inside of the processing container according to the second embodiment of the present invention. Here, the inner wall surface of the side wall 101b having the substrate transfer opening 161 of the processing container 101 and the side wall 101c having the window opening 163 is illustrated.

  The inner surface of the side wall 101b having the substrate transfer opening 161 is covered with a plate-like main liner 211 as a first protective member and is protected from plasma and corrosive gas. The main liner 211 has an opening having a size corresponding to the substrate transfer opening 161.

  Auxiliary liners 301a and 301b serving as second protective members, which are formed in smaller pieces than the main liner 211, are provided in duplicate around the corners 161a at both ends of the substrate transfer opening 161. Has been. That is, the periphery of the corner portion 161a of the substrate transfer opening 161 has a double bonded structure of the main liner 211 and the auxiliary liner 301a or 301b.

  The auxiliary liners 301a and 301b have a U-shape corresponding to the shape of the corner portion 161a of the substrate transfer opening 161, and are detachably provided on the side wall 101b.

  FIG. 7 shows a cross-sectional structure near the corner portion 161a of the substrate transfer opening 161 in which the auxiliary liner 301a (301b) is provided. A rectangular tube liner 213 having a horizontally wide cylindrical shape is inserted as a third protective member into the inner surface of the substrate transfer opening 161. The square tube liner 213 is disposed substantially perpendicular to the main liner 211. The square tube liner 213 is fixed to the side wall 101b by fixing means such as a screw (not shown).

  A small flange portion 213 a protruding outward is formed at the end of the square tube liner 213. On the other hand, a notch step portion 211 a is formed at the edge (opening end portion) of the opening of the main liner 211. The main liner 211 and the square tube liner 213 are joined so that the small flange portion 213a of the square tube liner 213 is fitted with the notch step portion 211a of the main liner 211. That is, the end portion of the main liner 211 and the end portion of the square tube liner 213 are joined together so as to form a fitting structure in which a boundary line between both members in a section of the joining portion is formed in a non-linear manner.

  The auxiliary liner 301a (301b) is disposed so as to overlap the main liner 211 so as to cover the joint portion between the main liner 211 and the square tube liner 213 from the inside. The auxiliary liner 301a (301b) is fixed to the side wall 101b by a screw 401 penetrating the main liner 211. The screw 401 ensures conduction between the auxiliary liner 301a (301b), the main liner 211, and the side wall 101b. Therefore, the auxiliary liner 301a (301b) and the main liner 211 are maintained at the ground potential. For the purpose of ensuring electrical connection among the side wall 101b, the main liner 211, and the auxiliary liner 301a (301b), a conductive member such as a shield spiral may be provided between them.

  As described above, the plasma generated inside the plasma etching apparatus 200 is more likely to be concentrated at the corner portions 161a at both ends than the straight portion 161b at the center of the substrate transfer opening 161. For this reason, in the present embodiment, the auxiliary liner 301a (301b) is provided on the main liner 211 around the corner portion 161a of the substrate transfer opening 161 on the side wall 101b. As described above, since the liner in the portion that is easily damaged by the plasma has a double structure, the consumption of the main liner 211 around the corner portion 161a can be prevented, and the number of replacement of the main liner 211 can be reduced. Further, since the auxiliary liners 301a and 301b provided in the parts that are easily damaged are small pieces compared to the main liner 211, the replacement work is easy, and the replacement time and parts are compared with the case where the entire main liner 211 is replaced. Costs can be reduced.

  Furthermore, since not only the auxiliary liners 301a and 301b but also the main liner 211 and the square tube liner 213 are separately formed by separate members without being integrally formed, processing can be facilitated and manufacturing costs can be reduced. The replacement work can be easily performed. In the present embodiment, the joint portion between the main liner 211 and the square tube liner 213 has a fitting structure between the notch step portion 211a of the main liner 211 and the small flange portion 213a of the square tube liner 213. When the main liner 211 and the square tube liner 213 are formed separately, if there is a gap in the joint due to insufficient parts processing accuracy or assembly precision, or thermal expansion during the plasma etching process, the joint Abnormal discharge tends to occur. For this reason, it is made hard to produce abnormal discharge in a joined part by making the structure of a joined part into the above-mentioned fitting structure. Further, by attaching the auxiliary liner 301a (301b) from above the joining portion, it is possible to reliably prevent the occurrence of abnormal discharge at the joining portion.

As the main liner 211 and the auxiliary liners 301a and 301b, the same material as the liners 201a to 201d of the first embodiment can be used. For example, as the rectangular tube liner 213 that covers the inner peripheral surface of the substrate transfer opening 161 where plasma tends to concentrate and the auxiliary liners 301a and 301b that cover the periphery of the corner portion 161a, the surface of the base material such as aluminum is excellent. it is preferred to use one which formed ceramics sprayed film such as Y 2 O 3 sprayed coating and YF 3 sprayed coating having a plasma erosion resistance. In the enlarged view of part A in FIG. 7, a state in which the Y 2 O 3 sprayed film 503 is formed on the surface of the aluminum base 501 as the auxiliary liner 301a (301b) is illustrated. On the other hand, the surface of the main liner 211 that is not directly affected by plasma as compared with the square tube liner 213 and the auxiliary liners 301a and 301b can be coated with an Al 2 O 3 sprayed film or an oxide film formed by anodizing. . Of course, the main liner 211, the square tube liner 213, and the auxiliary liners 301a and 301b may be formed with an oxide film by alumite treatment as a protective film, or a ceramic sprayed film of the same material may be formed. Good.

  FIG. 8 is an enlarged view of the vicinity of the corner portion 161a of the substrate transfer opening 161 in a modification of the present embodiment. FIG. 9 shows a cross-sectional structure taken along line IX-IX in FIG. In this modified example, a second protective member having a U-shape (U-shape) overlapped with the main liner 211 so as to cover the edge of the opening at both ends (only one end is shown) of the corner portion 161a of the substrate transfer opening 161. As an auxiliary liner 303. The configuration of the main liner 211 is the same as described above.

  On the inner surface of the substrate transfer opening 161, a rectangular tube liner 213 having a horizontally wide cylindrical shape as a third protective member is provided orthogonal to the main liner 211. The configuration of the square tube liner 213, the joining structure between the main liner 211 and the square tube liner 213, and the operation thereof are as described above.

  The auxiliary liner 303 having an L-shape in cross-section is provided in a corner portion 161a of the substrate transport opening 161 so as to overlap the corner portion so as to cover the joint portion between the main liner 211 and the square tube liner 213 from the inside. The auxiliary liner 303 is fixed to the square tube liner 213 by screws 402. By making the cross-sectional shape of the auxiliary liner 303 L-shaped, the auxiliary liner 303 can be easily attached to the corner formed at the edge of the substrate transfer opening 161 and can easily cover the joint portion between the main liner 211 and the square tube liner 213. There is an advantage of becoming.

In this modification, an auxiliary liner 303 is provided at a corner portion 161a of the substrate transfer opening 161 where plasma tends to concentrate. With such a structure, it is possible to prevent the main liner 211 and the square tube liner 213 from being consumed, and to reliably prevent abnormal discharge from the joint portion of both members. As the auxiliary liner 303, the same material as the liners 201a to 201d of the first embodiment can be used. For example, as the auxiliary liner 303 provided in a site where plasma is likely to concentrate, a ceramic sprayed film such as a Y 2 O 3 sprayed film or a YF 3 sprayed film having excellent plasma erosion resistance is provided on the surface of a base material such as aluminum. It is preferable to use the one formed. The main liner 211 and the square tube liner 213 can have the same configuration as described above.

  Refer to FIG. 6 again. The inner surface of the side wall 101c having the window opening 163 is covered with a plate-shaped main liner 215 as a first protective member and is protected from plasma and corrosive gas. The main liner 215 has an opening having a size corresponding to the window opening 163.

  Around the window opening 163, a small piece of auxiliary liner 305 serving as a second protective member is provided in a double manner on the main liner 215. That is, the periphery of the window opening 163 has a double bonded structure with the main liner 215 and the auxiliary liner 305.

  The auxiliary liner 305 has an opening having a size corresponding to the window opening 163, has a frame shape (frame shape) as a whole, and is detachably provided on the side wall 101c.

  FIG. 10 shows a cross-sectional structure near the window opening 163 provided with the auxiliary liner 305. A rectangular tube liner 217 having a rectangular tube shape as a third protective member is inserted into the inner surface of the window opening 163. The rectangular tube liner 217 is disposed substantially perpendicular to the main liner 215. The square tube liner 217 is fixed to the side wall 101c by fixing means such as a screw (not shown).

  A small flange portion 217 a that protrudes outward is formed at the end of the square tube liner 217. On the other hand, a notch step 215 a is formed at the edge (opening end) of the opening of the main liner 215. The main liner 215 and the square tube liner 217 are joined so that the small flange portion 217a of the square tube liner 217 is fitted with the notch step portion 215a of the main liner 215. That is, the end portion of the main liner 215 and the end portion of the square tube liner 217 are joined together so as to form a fitting structure in which a boundary line between both members in a section of the joining portion is formed in a non-linear manner.

The auxiliary liner 305 having an L shape in cross section is provided so as to overlap the main liner 215 so as to cover the joint portion between the main liner 215 and the square tube liner 217 from the inside.
By making the cross section of the auxiliary liner 305 L-shaped, it is easy to attach to the corner formed at the edge of the window opening 163 and to cover the joint portion between the main liner 215 and the square tube liner 217. There are advantages. The auxiliary liner 305 is fixed to the side wall 101 c by a screw 403 that passes through the main liner 215. The screw 403 ensures conduction between the auxiliary liner 305, the main liner 215, and the side wall 101c. Therefore, the auxiliary liner 305 and the main liner 215 are maintained at the ground potential. For the purpose of ensuring electrical connection among the side wall 101c, the main liner 215, and the auxiliary liner 305, a conductive member such as a shield spiral may be provided between them.

  As described above, the plasma generated inside the plasma etching apparatus 200 tends to concentrate on the edge 163 a of the window opening 163. For this reason, in the present embodiment, the auxiliary liner 305 is disposed around the window opening 163 so as to overlap the main liner 215. As described above, since the liner at the portion that is easily damaged by the plasma has a double structure, it is possible to prevent the main liner 215 from being worn around the window opening 163 and to reduce the number of times the main liner 215 is replaced. Further, since the auxiliary liner 305 provided in a portion that is easily damaged is smaller than the main liner 215, the replacement operation is easy, and the replacement time and parts cost are compared with the case where the entire main liner 215 is replaced. Can be suppressed.

  Furthermore, not only the auxiliary liner 305 but also the main liner 215 and the square tube liner 217 are separately formed by separate members without being integrally molded, so that the processing can be facilitated and the manufacturing cost can be reduced, and the replacement of each member is also possible. Work can also be done easily. Further, in the present embodiment, the joint portion between the main liner 215 and the square tube liner 217 has a fitting structure between the notch step portion 215a of the main liner 215 and the small flange portion 217a of the square tube liner 217. Auxiliary liner 305 was attached. Thereby, it is possible to reliably prevent abnormal discharge from the joint portion that is likely to occur due to the main liner 215 and the square tube liner 217 being formed separately.

As the main liner 215, the square tube liner 217, and the auxiliary liner 305, the same material as the liners 201a to 201d of the first embodiment can be used. For example, for the square liner 217 that covers the inner peripheral surface of the window opening 163 where plasma tends to concentrate and the auxiliary liner 305 that covers the same edge 163a, Y having excellent plasma erosion resistance on the surface of the base material such as aluminum. it is preferred to use one which formed 2 O 3 ceramic sprayed coating such as spray coating or YF 3 sprayed coating. On the other hand, the surface of the main liner 215 that is less susceptible to plasma than the square tube liner 217 and the auxiliary liner 305 can be covered with an Al 2 O 3 sprayed film or an oxide film formed by anodizing. Of course, the main liner 215, the square tube liner 217, and the auxiliary liner 305 may be formed with an oxide film by alumite treatment as a protective film, or a ceramic sprayed film of the same material may be formed.

  FIG. 11 shows a cross-sectional structure near the window opening 163 in a modification of the present embodiment. In the present modification, an auxiliary liner 307 as a second protective member is provided on the main liner 215 as the first protective member, and an auxiliary liner 309 as a fourth protective member is further stacked thereon. It has a deployed triple structure. The configuration of the main liner 215 is the same as described above.

  On the inner surface of the window opening 163, a rectangular tube liner 217 having a rectangular tube shape as a third protective member is disposed orthogonal to the main liner 215. The square tube liner 217 is fixed to the side wall 101c by a screw (not shown). The joining structure between the main liner 215 and the square tube liner 217 and the operation thereof are as described above.

  A flat auxiliary liner 307 having an opening is provided around the window opening 163 so as to overlap the main liner 215. A frame-shaped (frame-shaped) auxiliary liner 309 having an L-shaped cross section is provided so as to cover the main liner 215, the auxiliary liner 307, and the square tube liner 217. The auxiliary liner 309 is fixed to the side wall 101c by a screw (not shown) that penetrates the auxiliary liner 307 and the main liner 215. The L-shaped cross section of the auxiliary liner 309 makes it easier to attach to the corner formed at the edge of the window opening 163 and covers the joint portion of the main liner 215, the square tube liner 217, and the auxiliary liner 309. There is an advantage that it becomes easy to do.

  Between the main liner 215 and the square tube liner 217, a shield spiral 404 serving as a conducting member is interposed between the main liner 215 and the square tube liner 217. In addition, a shield spiral 405 is disposed between the main liner 215 and the auxiliary liner 307 for the same purpose. Further, a shield spiral 406 is interposed between the auxiliary liner 307 and the auxiliary liner 309 for the same purpose. The shield spirals 404 to 406 ensure conduction between the square tube liner 217, the main liner 215, the auxiliary liner 307, and the auxiliary liner 309. As described above, since the square tube liner 217 is screwed to the side wall 101c, the square tube liner 217, the main liner 215, and the auxiliary liners 307 and 309 are connected to the ground potential via the screw (not shown). Abnormal discharge is prevented.

  In this modification, the auxiliary liner 307 is disposed on the main liner 215, and a triple structure in which the auxiliary liner 309 is disposed thereon is formed. With such a triple structure, at the edge 163a of the window opening 163 where plasma tends to concentrate, the main liner 215 and the square tube liner 217 are prevented from being consumed, and the abnormal discharge from the joint portion of both members is reliably prevented. it can. For this reason, the frequency | count of replacement | exchange of the main liner 215 can be reduced.

  Further, since the auxiliary liner, which is a replacement part, is divided into the auxiliary liner 307 and the auxiliary liner 309 around the window opening 163, these replacement operations are easy, and compared with the case where the entire main liner 215 is replaced. This can reduce the replacement time and parts costs.

As the auxiliary liner 307 and the auxiliary liner 309, the same material as the liners 201 a to 201 d of the first embodiment can be used. For example, as the auxiliary liner 307 and the auxiliary liner 309 that are arranged in a region where plasma is likely to concentrate, a Y 2 O 3 sprayed film or a YF 3 sprayed film having excellent plasma erosion resistance on the surface of a base material such as aluminum is used. It is preferable to use a ceramic sprayed film. It is also possible to form ceramic sprayed films of different materials on the auxiliary liner 307 and the auxiliary liner 309, respectively. The main liner 215 and the square tube liner 217 can have the same configuration as described above.

  Although illustration and description are omitted, the side walls 101d and 101e of the processing vessel 101 also have the same liner structure as the side wall 101c around the window opening 163.

  As described above, in the present embodiment, the liner as the protection member is used as the main liner (main liner 211, 215) and the auxiliary liner (auxiliary liner 301a, 301b, 303, 305, 307, 309), and the auxiliary liner was formed into small pieces. With such a configuration, the replacement frequency of the main liner can be reduced, and the replacement operation of the auxiliary liner can be easily performed. In addition, the cost of replacement parts can be reduced.

  Other configurations, operations, and effects in the present embodiment are the same as those in the first embodiment.

  As mentioned above, although embodiment of this invention was described, this invention is not restrict | limited to the said embodiment, A various deformation | transformation is possible. For example, in the above embodiment, the RIE type capacitively coupled parallel plate plasma etching apparatus that applies high frequency power to the lower electrode (base material 107) has been described as an example. There may also be inductive coupling type without being limited to capacitive coupling type.

  Further, the processing container of the present invention is not limited to a plasma etching apparatus for processing an FPD substrate, but may be a semiconductor wafer, for example, and is not limited to a plasma etching apparatus, for example, a plasma ashing apparatus. The present invention can also be applied to other plasma processing apparatuses such as a plasma CVD apparatus.

  Further, the shape of the liner (main liner, square tube liner and auxiliary liner) as the protective member shown in the above embodiment, the fixing method to the side wall, and the joining structure between the liners are merely examples, and many There may be variations, but they are also within the scope of the present invention.

1 is a perspective view schematically showing a vacuum processing system. It is a top view of the vacuum processing system of FIG. It is sectional drawing which shows schematic structure of a plasma etching apparatus. It is drawing explaining the internal structure of the plasma etching apparatus which concerns on the 1st Embodiment of this invention. It is a horizontal sectional view explaining the internal structure of a plasma etching apparatus. It is drawing explaining the internal structure of the plasma etching apparatus which concerns on the 2nd Embodiment of this invention. It is principal part sectional drawing which shows the example of arrangement | positioning of an auxiliary liner. It is a principal part enlarged view which shows the example of arrangement | positioning of an auxiliary liner. It is principal part sectional drawing which shows the example of arrangement | positioning of an auxiliary liner. It is principal part sectional drawing which shows the example of arrangement | positioning of an auxiliary liner. It is principal part sectional drawing which shows the example of arrangement | positioning of an auxiliary liner.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1a, 1b, 1c ... Process chamber, 3 ... Transfer chamber, 5 ... Load lock chamber, 100 ... Vacuum processing system, 101 ... Processing container, 101a ... Bottom wall, 101b-101d ... Side wall, 101f ... Cover body, 105 ... Susceptor 151 ... Exhaust port, 161 ... Substrate transport opening, 161a ... Corner, 163 ... Window opening, 163a ... Edge, 201a-201d ... Liner, 203a-203c ... Liner

Claims (17)

  1. A processing container that accommodates an object to be processed and performs plasma processing,
    A container body having a bottom wall, a side wall, and a lid, and having an opening portion penetrating the side wall ;
    A protective member for protecting the container body from damage caused by plasma and / or corrosive gas,
    The protective member is a plate-shaped first protective member disposed along the inner wall surface of the side wall;
    Around the opening portion, a second protection member that is detachably disposed separately from the first protection member;
    Have
    The first protection member is mounted directly to the side wall has an opening of a size corresponding to the opening portion of the side wall,
    The second protection member is formed in a smaller piece than the first protection member, and has a frame shape corresponding to the shape of the opening portion of the container body or a U shape corresponding to the shape of the corner portion of the opening portion. the conjunction is mounted to overlap the first protective member, the processing container, characterized by having a ceramics sprayed film having a plasma erosion resistant surface.
  2. The processing container according to claim 1 , wherein the ceramic sprayed film is a sprayed film of Y 2 O 3 or YF 3 .
  3. The processing container according to claim 2 , wherein an oxide film by an alumite treatment or an Al 2 O 3 sprayed film is provided on the surface of the first protective member.
  4. The protective member further includes a cylindrical third protective member disposed along the inner wall surface of the opening portion,
    The end portion of the third protection member and the end portion of the first protection member are joined in a fitting structure in which a boundary line between both members in a cross section of the joining portion is formed in a non-linear manner. The processing container according to any one of claims 1 to 3 , wherein the joint portion is covered by the second protective member.
  5. The protective member further includes a cylindrical third protective member disposed along the inner wall surface of the opening portion,
    The third protection member has a flange portion protruding outward at one end portion thereof,
    The first protective member has a stepped portion at the opening end thereof.
    The third protection member and the first protection member are joined by fitting the flange portion and the stepped portion, and the joining portion covers the second protection member. The processing container according to any one of claims 1 to 3 , wherein:
  6. The processing container according to claim 4 or 5 , wherein a ceramic sprayed film having plasma erosion resistance is provided on a surface of the third protective member.
  7. The processing container according to claim 6 , wherein the ceramic sprayed film is a sprayed film of Y 2 O 3 or YF 3 .
  8. The second protective member, the processing chamber according to claims 1, characterized in that it forms a cross-sectionally L-shape in any one of claims 7.
  9. The protective member, according to any one of claims 1 to 8, characterized in that it comprises further a fourth protection member which is disposed on top of said second protective member Processing container.
  10. The processing container according to claim 9 , wherein a ceramic sprayed film having plasma erosion resistance is provided on a surface of the fourth protective member.
  11. The processing container according to claim 10 , wherein the ceramic sprayed film is a sprayed film of Y 2 O 3 or YF 3 .
  12. The opening part of the said container main body is a wide carrying-in / out port which carries in / out a board | substrate, and the said 2nd protection member is arrange | positioned around the both ends of this carrying-in / out port from Claim 1 The processing container according to claim 11 .
  13. The processing container according to any one of claims 1 to 11 , wherein the opening portion of the container body is an opening for a window.
  14. An exhaust port disposed in the container body;
    A rectifying plate for adjusting the gas flow to the exhaust port;
    A rectifying plate protection member that is connected to an end of the rectifying plate and protects the rectifying plate from damage caused by a gas flow toward the exhaust port;
    The processing container according to any one of claims 1 to 13 , further comprising:
  15. The processing container according to claim 14 , wherein a ceramic sprayed film having plasma erosion resistance is provided on a surface of the current plate protection member.
  16. The processing container according to claim 15 , wherein the ceramic sprayed film is a sprayed film of Y 2 O 3 or YF 3 .
  17. The plasma processing apparatus having a processing container according to any one of claims 16 claim 1.
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TW97146781A TWI442500B (en) 2007-12-03 2008-12-02 Processing vessel and plasma processing device
CN 200810178998 CN101452805B (en) 2007-12-03 2008-12-03 Processing container and plasma processing device
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TWI502617B (en) * 2010-07-21 2015-10-01 應用材料股份有限公司 Method,plasma processing apparatus ,and liner assembly for tuning electrical skews
CN103109363B (en) * 2010-09-17 2015-11-25 株式会社爱发科 Vacuum treatment installation
KR101322729B1 (en) * 2011-01-27 2013-10-29 엘아이지에이디피 주식회사 Apparatus for processing a substrate using plasma
TW201325326A (en) * 2011-10-05 2013-06-16 Applied Materials Inc Plasma processing apparatus and substrate support assembly thereof
JP6307825B2 (en) * 2013-09-25 2018-04-11 日新イオン機器株式会社 Protective plate support member, plasma source, and ion beam irradiation apparatus
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US9925639B2 (en) * 2014-07-18 2018-03-27 Applied Materials, Inc. Cleaning of chamber components with solid carbon dioxide particles

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US5641375A (en) * 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
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KR100476588B1 (en) * 2004-10-20 2005-03-04 주식회사 래디언테크 Processing chamber of etching facility for semiconductor fabrication
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TWI442500B (en) 2014-06-21
CN101452805B (en) 2011-09-28

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