JPS6335776A - Chemical vapor deposition device - Google Patents

Abstract

PURPOSE:To form a good-quality vapor-deposited film having uniform thickness on plural substrates by using the same conditions in introducing and discharging gaseous reactant for each substrate when plural substrates to be vapor-deposited are aligned, the gaseous reactant is supplied, and a vapor-deposited film resulting from the gaseous reactant is formed on the surfaces of the substrates. CONSTITUTION:Many substrates 2 to be vapor-deposited are aligned in a CVD reaction vessel 4, and two gaseous reactant inlet pipes 5 and 5 and two exhaust gas discharge pipes 10 and 10 are inserted in the arranging direction A of the substrates 2. The gaseous reactant 6 follows a course B from an inlet 9 close to each substrate, enters the exhaust port 11 of the discharge pipe 10, and is discharged through a pressure control valve 12. Since the gaseous reactant passes and reacts under the same conditions with respect to each substrate 2, a vapor-deposited film having uniform thickness is formed on each substrate 2 by vapor deposition.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application A vapor phase chemical vapor deposition apparatus is used to deposit a vapor onto a substrate while flowing a reactive gas through water and light.

Conventional technology This type of device I, CV
The 4A source is introduced into the reaction chamber as a gas, and an image is generated using a chemical reaction on the absorbed substrate. It is something that forms.

As shown in FIGS. 3 and 4, in a conventional horizontal CVD apparatus, a plurality of substrates 2 set on a substrate holder 1 are introduced into a reaction chamber 4 through a substrate input port 3, and the substrate input port 3 is closed. death,
A reaction gas 6 is supplied to this reaction chamber 4 from a gas introduction pipe 5,
A reaction gas 6 is caused to flow into the reaction chamber 4 by exhausting from an exhaust lower opened at the end of the reaction chamber 4 opposite to the substrate input port 3;
The temperature inside the reaction chamber 4 is raised by a heater 8 provided on the outer periphery of the reaction chamber 4, and a vapor phase chemical vapor deposited film is formed on the surface of the substrate 2.
Hereinafter referred to as a CVD film] is formed.

Reference numeral 9 denotes a gas introduction port provided in the gas introduction pipe 5.

Problems to be Solved by the Invention In such a conventional configuration, CVD within each adhesive plate 2
Membrane V! Although the variation in thickness is small, the variation in film thickness is large among the substrates 2 between the substrate 21 disposed near the substrate input port 3 and the substrate 2N disposed near the exhaust lower.

In addition, the same reactants [5iO2 particles formed in the reaction gas] and dust as the vapor deposits [for example, 5iO2] formed by the reaction in the vicinity of the gas inlet 9 are disposed in the path between the exhaust lower and the exhaust lower. It is sucked while continuing to adhere to the installed substrate 2. This phenomenon is the cause of pinholes in the CVD film and the formation of abnormal films, and is not normal CVD film.
This is an obstacle to film formation.

An object of the present invention is to provide a vapor phase chemical IdlP1 device that has less variation in the thickness of CVD films between U plates and can prevent the occurrence of pinholes and abnormal films in the CVD films.

Means for Solving the Problems The vapor phase chemical vapor deposition apparatus of the present invention is constructed so that vapor deposition is performed on a substrate to be deposited disposed in the reaction chamber while flowing a reaction gas into the reaction chamber. The gas inlet of the gas inlet pipe that supplies the reaction gas to the chamber is located 1 m near the location of each substrate to be deposited, and the gas exhaust port of the gas exhaust pipe that exhausts the reaction gas from the reaction chamber is connected to each substrate to be deposited. It is characterized by an opening V in the vicinity of the arrangement position.

According to this configuration, the reaction gas discharged into the reaction chamber from each gas inlet flows toward the gas exhaust [1] located in the vicinity thereof.

EXAMPLE Hereinafter, an example of the present invention will be explained based on FIGS. 1 and 2. Components that do not have the same functions as those in FIGS. 3 and 1 are designated by the same reference numerals, and their explanations will be omitted.

At L13 in FIG. 1, two gas exhaust pipes 10 are inserted into the inside of the reaction chamber 4 along the substrate arrangement direction A.
A plurality of gas exhaust ports 11 are bored in the gas exhaust pipe 10 near the substrate placement position. The gas exhaust pipe 10 is connected to the reaction chamber 4
It is connected to an exhaust system (not shown) via a pressure control pulp 12 on the outside of the pump.

With this configuration, the reaction gas 6 released into the reaction chamber 4 from each gas inlet 9 of the gas inlet pipe 5 is transferred to each gas II located near the gas inlet [19] as shown in FIG.
A plurality of substrates 2 set in the substrate holder 1 flow toward the direction of the arrow B and are discharged to the outside of the reaction chamber 4.
Gas introduction, reaction, and J1 gas to the predetermined substrate glue 1
He is ranked 131st.

Therefore, gas is introduced inside the reaction chamber 4 [19 and gas 11
Since the air holes 11 are arranged at a close uniform distance from each substrate 2, the reaction conditions between the substrates are also approximate, and variations in the thickness, quality, etc. of the CVD film between the substrates are avoided. becomes less.

Furthermore, since the gas of the reaction flow is immediately sucked and exhausted to the gas exhaust port 11 arranged close to each substrate 2, it is difficult for dust and abnormal growth to adhere to the substrate 2 as in the conventional case.
We can expect good r1 CVDv growth.

In the above-described practical example, a horizontal CVD apparatus in which the reaction chamber 4 is made horizontal has been described as an example, but a vertical CVD apparatus in which the reaction chamber 4 is placed vertically can be expected to have the same effect as in the case of 6.

Effects of the invention As explained in 1st L, the gas phase chemistry of the present invention 'A? 'Y device has a gas inlet pipe and a gas exhaust pipe inserted into the reaction chamber, and a gas inlet and a gas IK gas [I] in the vicinity of the position where the substrate to be deposited are inserted into the gas inlet pipe and the gas exhaust pipe, respectively. Because of the perforation, the reaction gas introduced into the reaction chamber from the gas inlet port flows toward the gas exhaust port located in the vicinity of the gas inlet port, and gas introduction, reaction, and exhaust are performed for each group of predetermined substrates to be deposited. Variations in film thickness and film quality between substrates to be deposited are reduced.

In addition, as shown in 85 above, gas introduction, reaction,
Compared to the conventional method, which draws all the reaction flow gas to a single exhaust port and exhausts it, dust and abnormal growth are less likely to adhere, and a high-quality film is produced. We can expect growth in this area.

[Brief explanation of the drawing]

Figure 1 is a cross-sectional view of a main part of an embodiment of a vapor-phase chemical vapor deposition apparatus manufactured by Ming. Figure 2 is a cross-sectional view of Figure 1. FIG. 4 is a cross-sectional view of main part U, and FIG. 4 is a cross-sectional view of FIG. 3. 2...Substrate [substrate to be deposited], 4...Reaction chamber, 5...
・Gas inlet pipe, 9...Gas inlet, 10...Gas exhaust pipe, 11...Gas exhaust port, A...Substrate arrangement direction agent Hiroshi Moriki Figure 1 Figure 2

Claims (1)

[Claims] 1. The configuration is such that vapor deposition is carried out on the deposition target substrates arranged in the reaction chamber while flowing the reaction gas into the reaction chamber, and the gas inlet of the gas introduction pipe that supplies the reaction gas to the reaction chamber is connected to each deposition target substrate. A vapor phase chemical vapor deposition apparatus in which a gas exhaust port of a gas exhaust pipe for exhausting a reaction gas from a reaction chamber is opened near a placement position of each deposition target substrate.