201142072 六、發明說明： 【發明所屬之技術領域】 本發明係有關於-種藉由經進氣機構進入處 氣體以沈積塗層於基板上的裂置，該基板在處理係由基 座所承載’其中，該進氣機構具有由輸入管供氣的配氣容 腔，而該喊容腔具有錢面、及位於該喊以相對侧的 出氣面；驗將氣體送人配氣容㈣輸人管，係以形成開口 的方式與該進氣面相連通；從氣體之流向看於配氣容腔 内’在開Π後面設有包括多墙㈣檔板配置，而該等擋板 全體將開Π在出氣面上的投影覆蓋，該出氣面具有多個與處 理室相連通的出氣口。 【先前技術】 US 2004/01 29 213 A1揭示一種用於沈積族半導體 層的裝置，其中，藉由送入HC1，在處理室内經一鎵源而形 成GaC卜該GaCl與同樣被送入該處理室的氨發生反應，從 而生成GaN。氫化物經由具有迴曲形通道的進氣機構而進 入處理室。 US 6,565,661 B1揭示一種用於CVD反應器的進氣機構， 其進氣管之開口前方設有擋板。擋板下游佈置有一包含多個 出氣口的出氣面。 US 2005/00 111 447 A1揭示一種位於進氣機構内且具有 多個板體的配氣系統，該等板體具有蜂巢型結構。 100104375 4 201142072 DE 102 32 206 A1揭示一種具有多個連續佈置的擋板的 進氣機構，該等擋板皆配有通孔，以便氣體穿過擋板。 DE 10 2006 013 801A1揭示一種具有進氣機構的CVD反 應室，該進氣機構中設有位於進氣口與多個出氣口之間的擋 板。 DE 10 2006 018 515 A1揭示一種處理室頂部可升降的 CVD反應器，其令，處理室頂部設有配備擋板的進氣機構。 US 2002/00 69 969 A1揭示一種具有進氣口的CVD反應 器用進氣機構，處理氣體可經由進氣口而進入配氣容腔。配 氣谷腔内δ又有可偏轉抑或可如雨伞般展開的擔板配置，從氣 體流向看，該擋板配置下游佈置有包含多個出氣口的出氣 面。 US 2002/00 20 767 Α卜 us 6,010,784、US 5,741，363 及 US 5,616,373皆係有關於配備整合式擋板的「蓮蓬頭」型進 氣機構。 上述習知技術係有關於一種具有金屬製反應器殼體的反 應器。反應器殼體内設有圓柱形進氣機構。進氣機構之頂面 與輸入管相連通，而該輸入管則與混氣系統相連。混氣系統 為進氣機構提供運載氣體及處理氣體。從流入氣體之流向 看’進氣機構之配氣容腔内部設有擋板，流入氣體撞到該擋 板上後越過其邊緣，進入位於該擋板下方的容腔區。擋板平 行於進氣機構之頂部及出氣面，而該出氣面具有多個呈蓮蓬 100104375 5 201142072 頭狀分佈的出氣口，該等出氣口則與處理室相連通，而該處 理室之底部由基座所構成，其上放置有待塗佈的基板。基座 由其下方的加熱器加熱至處理溫度，進入處理室的處理氣體 在該處理溫度下發生熱分解，並在基板表面冷凝以形成塗 層。 使用該種CVD反應器時，若在次毫巴（Submimbar)壓力範 圍内實施塗佈過程，則已沈積塗層中會產生橫向不均勻性。 【發明内容】 本發明之目的在於改良進氣機構，以改善已沈積塗層的橫 向均勻性。 申請專利範圍所述之本發明乃達成上述目的之解決方 案。本發明之首要及主要特徵在於，至少三個（較佳四個）擋 板分別覆蓋開口之投影之不同分區，其中，無論從氣體之流 入方向看，抑或從垂直於流入方向的方向看，該等至少三個 (較佳四個）擋板均相對偏移佈置，且具有被氣流流經的自由 周向邊緣。本發明之蓮蓬頭型進氣機構具有輸入管，而該輸 入官形成一個開口面。開口面較佳位於進氣機構之頂蓋區 内。進氣機構之上壁基本為平整，且包括該開口，而氣體沿 大體上垂直於進氣機構上壁之延伸方向的方向穿過該開 口。進氣機構之下壁平行於進氣機構之上壁，從而在上壁與 下壁間形成一個配氣容腔。進氣機構之下壁具有多個出氣 口而該等出氟口大體上均勻地分佈於進氣機構之整個下壁 100104375 6 201142072 上由此’形成—個出氣面，此出氣面構成處理室之上壁， 室之下壁則由—個基座構成，待塗佈的基板係放置 以土上。諸擋板位於進氣機構之上壁與下壁之間，亦 =位於輸人管之開口與諸出氣口之間。該等擔板為薄板， 谷腔内部，與上壁間之距離各不相同。諸擋板與 構之上壁間的距離各不相同。該等擔板不僅相互平 订。其亦平行於進氣機構之上壁。因此，無論從經由輸入管 腔的氣體之流入方向看，抑或從垂直於流入方向 的方向看’擋板配置部之板均相對偏移佈置。宜中，每 一播=僅覆蓋住輸人管開口之部分面積，亦即，輸入管開 :之:刀£域不被某一擔板所覆蓋’但至少被另-檔板所覆 直於出氣面的方向觀察，開口之㈣_ 1層二覆蓋。因此’氣流自輪入管之開口中出來 ==彼此相隔—定距離且分應開口間隔 不同距離的擋板，其中， 據本發明，有多個(特定r之= 反係平行於出氣面佈置。根 口間隔不同距離的擋板，抑個或三個以上)分別與開 發明之擋板配置部的氣流大口之-個分區。流向本 應擋板之自由邊緣，進 轉向’而後越過相 呈圓形，且其直徑料•進=_容_。板較佳 握可大趙上等於配氣容腔上二之直徑。進氣開口之直 直徑亦處於此間距範圍内：之間距。故而，該等播板之 很媒一種較佳設計方案，諸擋板 100104375 201142072 具有圓形輪廓。該等擋板可藉由支桿而固定於進氣機構之殼 體上。根據一種尤佳設計方案，共設有四個擔板，其係相互 重疊，且全體將開口完全覆蓋，此外，該等檔板固定於進氣 機構之上壁，且分別與該上壁間隔不同距離。亦可用穩定連 接件連接各擂板，以穩定之。該等擋板亦可固定在進氣機構 之側壁或底壁上。進氣機構之底壁較佳構成一個出氣面，而 此出氣面具有多個呈篩狀均勻分佈的出氣口。該等出氣口位 於輸入管之開口對面。出氣面平行於基座之基板承載面。進 氣機構之出氣面與基座之承載面間的容腔即為處理室。CVD 反應器經由管道而與供氣設備相連。供氣設備可定量提供運 載氣體及至少-種處理氣體。定量提供的氣體經由輸入管進 入進氣機構，並在擋板配置部之作用下，即便壓力低於 mbar，較佳低於〇.1 mbar，其亦能均勻分佈，亦即，自諸社 氣口進入處理室者乃均勻氣流。基座可施作成為冷卻塊。^ 用冷水流冷卻之。將基板放置於已冷卻的基座上，再為其璧 佈有機層。此有機層可A 0LED層。但，亦 作為替代方案，亦可用紅外線加熱器或射頻加熱器^㈣ 下方將其加熱。藉此，將放置於基座上的待塗佈基板之表击 加熱至處理溫度。被送人處理室的處理氣體係為第冚^ 元素之有機金屬化合物、及第v主族元素之氫化物。其名 基板表面發生熱分解，或在基板表面上方以氣相發生㈣ 解，分解產物則在基板上形成單晶m_v族層反應器 100104375 8 201142072 與帶真空泵的真空設備相連，而該真空設備能令處理室及配 氣容腔内部保持低於1 mbar之恒·定壓力。此壓力較佳低於 0.1 mbar。該等相互平行佈置的擋板間之距離小於其直徑， 亦小於距開口最近的擋板到開口之距離。 【實施方式】 下文將藉由附圖對本發明之實施例進行詳細說明。 如圖3所示之CVD設備具有一個可定量提供不同氣體的 供氣設備14。此設備特定言之可定量提供氫氣、氮氣或稀 有氣體形式之運載氣體’並將運載氣體與不同處理氣體混 合。 隨後，便可藉由輸入管5，將運載氣體與處理氣體一併送 入CVD反應器。處理氣體係由有機金屬成分與氫化物組 成，其中，該有機金屬成分可包含鎵、銦或鋁等元素，而該 氫化物可包含砷、磷或氮等元素。 輸入官與佈置在CVD反應器内的進氣機構4之金屬製(特 別疋不鏽鋼製）蓋板相連通。輪入管5之開口 直握約為 100 mm。進氣機構4基本呈圓柱形，具有圓形蓋板而開 口二位於該蓋板之中&進氣機構4具有與蓋板平行且相隔 :定距離的圓形出氣面8，其上設有多個出氣口 7。該等出 机口 7 ^蓮蓬碩狀佈置，故而此種進氣機構4亦稱「蓮蓬頭」。 a處理至1位於出氣面8下方’其底部由基座2構成，該基 座特定言之係由石墨構成。出氣面8之延伸度大體上覆蓋了 100104375 201142072 基座2之指向處理室1的整個表面，而該表面可放置多個待 塗佈基板。 基座2下方設有加熱器16。此加熱器可為螺旋型射頻天 線，其產生交變場，以在基座2内引發可將基座2加熱的渦 流。 反應器經由排氣管而與真空設備15相連，而該真空設備 可利用可調真空泵’在處理室1内部產生低於1 mbar之負 壓。進氣機構4之内腔形成配氣容腔6，其壓力同樣處於1 mbar以下之範圍内。 進氣機構4内部設有擋板配置部，在本實施例中，擋板配 置部總共包括四個圓盤體9、1〇、11、12。如圖2所示，擋 板9至12係相對侧向偏移。其中，每一擋板9至12皆與另 一擋板重疊。但每一擋板9至12皆僅覆蓋住輸入管之開口 5〃之部分面積。然而，從整體看，擋板9至12全體仍將輸 入管5之整個開口 5'覆蓋住。 四個擋板9至12中任一擋板皆覆蓋開口 5，之中心，因此， 每一擋板9至12皆僅與另一擋板9至12部分重疊。為此， 汉有個中央連接件17，此連接件可使得全部擋板9至12 均相隔定距離。該連接件被施作為螺釘，此螺釘穿過開設 於各擔板9至12上的孔口，其中，各播板9至12間佈置有 可被該連接螺釘所貫穿的隔離套。擋板9至12係等距地佈 置其間距介於數毫米與數公分之間。圓形擋板9至12之 100104375 201142072 直徑略大於輸入管5之圓形開口面之直徑。矩開口 & = 擔板9到開口 5,之距離，遠大於檔板9至12冲目互間5’最近的 不相 如圖1所示，擋板9、12與開口 5,之表面間的距矩離。 同。但，各擋板9至12皆平行於開口 5,之 各 出氣面8。 亦平行於 共設有四個支桿13，以將擋板9至12固定於 之頂部。該等支桿13位於-個假想正方形之四角^機構4 對於對稱佈置的擋板9至12而言，係偏心佈置。點上，相 進氣機構4可具有圓形、矩形及特別是方形的輪庵。杂 氣機構内部總壓力約為Q 25mbar時，每—擋板下方皆會形 成回流。由於各擋板係相對偏移佈置，故各回流相互干擾， 以至於無穩疋流型形成，從而避免自出氣口流出的氣體爻到 局部影響。自分佈於整個方形出氣面8的出氣口中流出者， 乃均勻氣流，藉此，使處理壓力通常為〇 i mbar的處理室 内部形成均勻的流場。 可根據具體應用的經進氣機構進入處理室的氣體混合 物，對出氣面進行冷卻或加熱。進氣機構之壁部與蓋板亦如 此。 根據附圖未示出之實施例，基座2並非自下方由加熱器加 熱。該基座具有多個通冷卻液的冷卻通道，以冷卻基座。藉 由此種裝置，可在基座所承載的基板上沈積有機層，特別是 聚合物。此種裝置可將整個進氣機構加熱。 100104375 11 201142072 輸入管5之開口 5,位於進氣機構4之上 進氣機構4之由出氣面8構㈣ 橫側壁（開口 5'位於該橫側壁 ，、其對面的 口 5,之槪吻食91^=數值上與開 擋板9至12較佳為直徑相等，而心用相同設計。 〜 而皆具有圓形輪廓、及伸入 配氣谷腔6的自由邊緣。其直經與開口 5,之直徑大體上相 符。但，擋板9至12之直徑較佳略大於開口直押。 =以連接全部四個擂板9至12的連接件17係切開口 5, 之中央。偏心佈置的支桿13係位於一個正方形之四角點 上。擋板9至12以某種方式佈置在支桿13上，其中心位於 -個正方形之四角點上’其中，擋板9至12之中心在開口 =所界定的平面上的投影’大體上位於圓形開㈠之邊緣 所有已揭示特徵（自身即)為發明本質所在。故本申情案之 揭不内容亦包含相關/所附優先權槽案（先申請案副本)所揭 示之全部内容’該等檔案所述特徵亦-併納入本申請案之申 請專利範圍。附屬項採用可選並列措辭對本發明針對先前技 術之改良方案的特徵予以說明，其目的主要在於可在該等請 求項基礎上進行分案申請。 【圖式簡單說明】 圖Ϊ為CVD反應器之進齑攙 方設有可加熱基座。喊構之拍圖，該進氣機構下 100104375 12 201142072 圖2為擋板配置部9、10、11、12如圖1中箭頭II所示 之俯視圖。 圖3為CVD設備之簡圖。 【主要元件符號說明】 1 處理室 2 基座 3 基板 4 進氣機構 5 輸入管 5， 開口（面） 6 配氣容腔 7 出氣口 8 出氣面 9 圓盤體；擋板 10 圓盤體；擋板 11 圓盤體；擋板 12 圓盤體；擋板 13 支桿 14 供氣設備 15 真空設備 16 加熱器 17 連接件 100104375 13201142072 VI. Description of the Invention: [Technical Field] The present invention relates to a method for depositing a coating on a substrate by entering a gas through an air intake mechanism, the substrate being carried by the susceptor in the processing system Wherein, the air intake mechanism has a gas distribution chamber supplied by the input pipe, and the shouting cavity has a money surface, and an air outlet surface located on the opposite side of the shouting; the gas is sent to the gas distribution capacity (four) input The tube is connected to the inlet surface in such a manner as to form an opening; from the flow of the gas to the inside of the gas distribution chamber, a plurality of wall (four) baffle plates are arranged behind the opening, and the baffles are all opened. The projection surface on the gas outlet surface has a plurality of gas outlets communicating with the processing chamber. [Prior Art] US 2004/01 29 213 A1 discloses a device for depositing a group semiconductor layer in which GaCl is formed by a gallium source in a processing chamber by feeding HC1, and the GaCl is also fed into the process. The ammonia of the chamber reacts to form GaN. The hydride enters the processing chamber via an air intake mechanism having a curved return passage. US 6,565,661 B1 discloses an air intake mechanism for a CVD reactor with a baffle in front of the opening of the intake pipe. A gas outlet surface including a plurality of gas outlets is disposed downstream of the baffle. US 2005/00 111 447 A1 discloses a gas distribution system located in an air intake mechanism and having a plurality of plates, the plates having a honeycomb structure. 100104375 4 201142072 DE 102 32 206 A1 discloses an air intake mechanism having a plurality of continuously arranged baffles, all of which are provided with through holes for gas to pass through the baffles. DE 10 2006 013 801 A1 discloses a CVD reaction chamber having an air intake mechanism in which a baffle between the air inlet and a plurality of air outlets is provided. DE 10 2006 018 515 A1 discloses a CVD reactor in which the top of the treatment chamber can be raised and lowered, wherein the top of the treatment chamber is provided with an air inlet mechanism equipped with a baffle. US 2002/00 69 969 A1 discloses an air intake mechanism for a CVD reactor having an intake port through which a process gas can enter a valve air volume. The δ in the gas distribution chamber has a deflector configuration that can be deflected or can be deployed like an umbrella. From the flow direction of the gas, the outlet surface is provided with an outlet surface containing a plurality of gas outlets. US 2002/00 20 767 us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us us The above prior art relates to a reactor having a metal reactor housing. A cylindrical air intake mechanism is provided in the reactor housing. The top surface of the air intake mechanism is in communication with the input pipe, and the input pipe is connected to the air mixing system. The aeration system supplies carrier gas and process gas to the intake mechanism. From the flow of the inflowing gas, there is a baffle inside the air distribution chamber of the air intake mechanism, and the inflow gas hits the edge of the baffle and passes over the edge thereof to enter the cavity area below the baffle. The baffle is parallel to the top of the air intake mechanism and the air outlet surface, and the air outlet surface has a plurality of air outlets distributed in the shape of a head 100104375 5 201142072, and the air outlets are connected to the processing chamber, and the bottom of the processing chamber is The base is constructed with a substrate to be coated placed thereon. The susceptor is heated by the heater below it to the processing temperature, and the process gas entering the processing chamber is thermally decomposed at the processing temperature and condensed on the surface of the substrate to form a coating. When such a CVD reactor is used, lateral unevenness is generated in the deposited coating if the coating process is carried out within a sub-mila pressure range. SUMMARY OF THE INVENTION It is an object of the present invention to improve an air intake mechanism to improve the lateral uniformity of a deposited coating. The invention described in the scope of the patent application is a solution to the above object. The primary and primary feature of the present invention is that at least three (preferably four) baffles respectively cover different sections of the projection of the opening, whether viewed from the direction of inflow of the gas or from a direction perpendicular to the direction of inflow, The at least three (preferably four) baffles are each arranged offset relative to each other and have a free circumferential edge through which the airflow flows. The showerhead type air intake mechanism of the present invention has an input pipe, and the input officer forms an open face. Preferably, the open face is located in the top cover region of the air intake mechanism. The upper wall of the air intake mechanism is substantially flat and includes the opening, and the gas passes through the opening in a direction substantially perpendicular to the direction in which the upper wall of the air intake mechanism extends. The lower wall of the air intake mechanism is parallel to the upper wall of the air intake mechanism to form a valve air cavity between the upper wall and the lower wall. The lower wall of the air intake mechanism has a plurality of air outlets, and the fluorine outlet ports are substantially evenly distributed on the entire lower wall of the air intake mechanism 100104375 6 201142072, thereby forming an air outlet surface, and the air outlet surface constitutes a processing chamber. On the upper wall, the lower wall of the chamber is composed of a base, and the substrate to be coated is placed on the soil. The baffles are located between the upper wall and the lower wall of the air intake mechanism, and are also located between the opening of the input pipe and the air outlets. The plates are thin plates, and the distance between the inside of the valley and the upper wall is different. The distance between the baffles and the upper wall of the structure varies. These boards are not only mutually aligned. It is also parallel to the upper wall of the air intake mechanism. Therefore, the plates of the baffle arrangement portion are relatively offset from each other as seen from the inflow direction of the gas passing through the input pipe cavity or from the direction perpendicular to the inflow direction. In the middle, each broadcast = only covers the area of the opening of the input pipe, that is, the input pipe is open: the knife field is not covered by a certain plate 'but at least covered by the other - baffle The direction of the outlet surface is observed, and the opening (4) _ 1 layer is covered. Therefore, the airflow exits from the opening of the wheel-in pipe == is separated from each other by a fixed distance and is divided into openings at different distances. According to the invention, there are a plurality of (specific r = anti-parallel arranged parallel to the gas outlet surface. The baffles are separated by different distances, and one or more of the baffles are respectively separated from the airflow of the baffle arrangement portion of the invention. It flows to the free edge of the baffle, turns into a 'turn' and then passes over the phase and is rounded, and its diameter is ± _ _. The plate is better than the diameter of the upper two of the gas distribution chamber. The straight diameter of the inlet opening is also within this spacing: the distance between them. Therefore, a good design of these broadcast boards is preferred, and the baffles 100104375 201142072 have a circular outline. The baffles can be secured to the housing of the air intake mechanism by struts. According to a particularly preferred design, a total of four support plates are provided, which overlap each other, and the entire cover is completely covered. Further, the baffles are fixed to the upper wall of the air intake mechanism and are respectively spaced apart from the upper wall. distance. It is also possible to connect the jaws with a stable connection to stabilize. The baffles can also be attached to the side walls or bottom wall of the air intake mechanism. The bottom wall of the air intake mechanism preferably constitutes an air outlet surface, and the air outlet surface has a plurality of air outlets uniformly distributed in a sieve shape. The air outlets are located opposite the opening of the input tube. The exit surface is parallel to the substrate carrying surface of the base. The chamber between the outlet surface of the inlet mechanism and the bearing surface of the base is the processing chamber. The CVD reactor is connected to the gas supply device via a pipe. The gas supply device can quantitatively supply the carrier gas and at least one type of process gas. The quantitatively supplied gas enters the intake mechanism via the input pipe, and under the action of the baffle arrangement portion, even if the pressure is lower than mbar, preferably lower than 〇1 mbar, it can be evenly distributed, that is, from the gas outlets The person entering the treatment room is a uniform airflow. The pedestal can be applied as a cooling block. ^ Cool with a cold water stream. The substrate is placed on a cooled susceptor and an organic layer is applied to it. This organic layer can be an ALED layer. However, as an alternative, it can also be heated by an infrared heater or RF heater ^(4). Thereby, the surface of the substrate to be coated placed on the susceptor is heated to the treatment temperature. The process gas system to be sent to the treatment chamber is an organometallic compound of the 冚^ element and a hydride of the vth main group element. The surface of the substrate is thermally decomposed, or (four) is generated in the gas phase above the surface of the substrate, and the decomposition product is formed on the substrate to form a single crystal m_v layer reactor 100104375 8 201142072 connected to a vacuum device with a vacuum pump, and the vacuum device can Keep the inside of the chamber and the valve chamber at a constant pressure of less than 1 mbar. This pressure is preferably below 0.1 mbar. The distance between the mutually parallel baffles is less than their diameter and is also less than the distance from the baffle closest to the opening to the opening. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The CVD apparatus shown in Fig. 3 has a gas supply device 14 which can supply different gases in a quantitative manner. This device specifically provides a carrier gas in the form of hydrogen, nitrogen or a rare gas and mixes the carrier gas with a different process gas. Subsequently, the carrier gas and the process gas can be fed to the CVD reactor through the inlet pipe 5. The process gas system consists of an organometallic component and a hydride, wherein the organometallic component may comprise an element such as gallium, indium or aluminum, and the hydride may comprise an element such as arsenic, phosphorus or nitrogen. The input officer is in communication with a metal (special stainless steel) cover plate of the intake mechanism 4 disposed in the CVD reactor. The opening of the wheel tube 5 is approximately 100 mm. The air inlet mechanism 4 has a substantially cylindrical shape with a circular cover plate and the opening 2 is located in the cover plate. The air intake mechanism 4 has a circular air outlet surface 8 which is parallel to the cover plate and spaced apart by a distance. Multiple air outlets 7. These outlets are 7 ^ lotus-shaped, so the air intake mechanism 4 is also called "rainhead". The a treatment to 1 is located below the gas outlet surface 8 and the bottom portion thereof is constituted by a susceptor 2, which is specifically composed of graphite. The extent of the outlet face 8 substantially covers 100104375 201142072. The base 2 is directed to the entire surface of the processing chamber 1, and the surface can be placed with a plurality of substrates to be coated. A heater 16 is provided below the susceptor 2. This heater can be a helical RF antenna that produces an alternating field to induce eddy currents within the susceptor 2 that can heat the susceptor 2. The reactor is connected to a vacuum device 15 via an exhaust pipe, and the vacuum device can generate a vacuum of less than 1 mbar inside the process chamber 1 using an adjustable vacuum pump'. The inner chamber of the air intake mechanism 4 forms a gas distribution chamber 6 whose pressure is also in the range of 1 mbar or less. The air intake mechanism 4 is internally provided with a baffle arrangement portion. In the present embodiment, the baffle arrangement portion includes a total of four disk bodies 9, 1 , 11, and 12. As shown in Fig. 2, the flaps 9 to 12 are laterally offset from each other. Each of the baffles 9 to 12 overlaps with the other baffle. However, each of the baffles 9 to 12 covers only a portion of the opening 5 of the input pipe. However, as a whole, the entire baffles 9 to 12 still cover the entire opening 5' of the input pipe 5. Each of the four baffles 9 to 12 covers the center of the opening 5, and therefore, each of the baffles 9 to 12 partially overlaps only the other baffles 9 to 12. To this end, Han has a central connector 17 which allows all of the baffles 9 to 12 to be spaced apart. The connector is applied as a screw which passes through an opening formed in each of the plates 9 to 12, wherein a spacer sleeve through which the connecting screws are passed is disposed between the panels 9 to 12. The baffles 9 through 12 are arranged equidistantly between a few millimeters and a few centimeters. Round baffles 9 to 12 100104375 201142072 The diameter is slightly larger than the diameter of the circular opening face of the input tube 5. Moment opening & = the distance between the plate 9 and the opening 5, which is much larger than the closest of the baffles 9 to 12, which is the closest to each other, as shown in Fig. 1, between the surfaces of the baffles 9, 12 and the opening 5 The distance from the moment. with. However, each of the baffles 9 to 12 is parallel to the opening 5 and the respective outlet faces 8. Four struts 13 are also provided in parallel to fix the baffles 9 to 12 to the top. The struts 13 are located at the four corners of the imaginary squares. The mechanism 4 is eccentrically arranged for the symmetrically arranged baffles 9 to 12. In point, the phase inlet mechanism 4 can have a circular, rectangular and in particular square rim. When the total internal pressure of the gas trap is about Q 25 mbar, reflux will occur under each baffle. Since the baffles are arranged in a relatively offset manner, the respective recirculations interfere with each other, so that an unstable turbulent flow pattern is formed, thereby preventing the gas flowing out of the gas outlet from being locally affected. The outflow from the gas outlets distributed over the entire square outlet surface 8 is a uniform gas flow whereby a uniform flow field is formed inside the processing chamber where the treatment pressure is usually 〇 i mbar . The gas outlet may be cooled or heated depending on the specific application of the gas mixture entering the process chamber via the inlet mechanism. This is also the case for the wall and cover of the air intake mechanism. According to an embodiment not shown in the drawings, the base 2 is not heated by the heater from below. The pedestal has a plurality of cooling passages through the coolant to cool the susceptor. With such a device, an organic layer, particularly a polymer, can be deposited on the substrate carried by the susceptor. Such a device heats the entire intake mechanism. 100104375 11 201142072 The opening 5 of the input pipe 5 is located above the air intake mechanism 4. The air intake surface 4 of the air intake mechanism 4 is constructed by four (four) lateral side walls (the opening 5' is located at the lateral side wall, and the opposite side of the mouth 5, The value of 91^= is preferably equal to the diameter of the opening baffles 9 to 12, and the core is of the same design. The both have a circular contour and a free edge extending into the gas distribution chamber 6. The straight and the opening 5 The diameters of the baffles 9 to 12 are generally substantially the same. However, the diameter of the baffles 9 to 12 is preferably slightly larger than that of the opening. = The center of the opening 5 is cut by the connecting member 17 connecting all the four sill plates 9 to 12. The struts 13 are located at a corner of a square. The baffles 9 to 12 are arranged in some manner on the struts 13 with their centers at the corners of a square - where the centers of the baffles 9 to 12 are open = The projection on the defined plane 'is generally located at the edge of the circular opening (1). All the revealed features (self) are the essence of the invention. Therefore, the content of this application also contains the relevant/attached priority case. (All copies of the first application) are disclosed. Included in the scope of the patent application of the present application. The accessory uses the optional side-by-side wording to describe the features of the prior art improvement scheme of the present invention, and the main purpose thereof is to make a divisional application on the basis of the request items. Description: The CVD Ϊ CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD CVD Figure 1 is a schematic view of the CVD equipment. Figure 3 is a schematic diagram of the CVD equipment. [Main component symbol description] 1 Processing chamber 2 Base 3 Substrate 4 Intake mechanism 5 Input tube 5, opening (face) 6 Valve chamber 7 air outlet 8 air outlet surface 9 disc body; baffle 10 disc body; baffle 11 disc body; baffle 12 disc body; baffle 13 strut 14 gas supply device 15 vacuum device 16 heater 17 connector 100104375 13