CN111627791B

CN111627791B - Substrate precleaning chamber

Info

Publication number: CN111627791B
Application number: CN202010476666.XA
Authority: CN
Inventors: 佘鹏程; 范江华; 龚俊; 罗超
Original assignee: CETC 48 Research Institute
Current assignee: CETC 48 Research Institute
Priority date: 2020-05-29
Filing date: 2020-05-29
Publication date: 2022-10-18
Anticipated expiration: 2040-05-29
Also published as: CN111627791A

Abstract

The invention discloses a substrate pre-cleaning cavity which comprises a cavity body, wherein a base with radio frequency power is arranged at the lower part of the cavity body, an insulating ring and a shielding ring are sequentially arranged on the outer side of the base, an air inlet plate is arranged above the base, an annular connecting piece is connected between the upper part of the cavity body and the air inlet plate, a baffle is arranged on the air inlet plate, an air inlet is arranged at the upper part of the cavity body, the air inlet, the baffle, the air inlet plate and the base are coaxially arranged, a plurality of uniform air holes are uniformly arranged on the air inlet plate, a plurality of communicating holes which are uniformly arranged along the circumferential direction and are communicated with the uniform air holes at the lower part are arranged on the side surface of the baffle, an exhaust ring is arranged between the shielding ring and the side wall of the cavity body, a plurality of exhaust holes are uniformly arranged on the exhaust ring along the circumferential direction, and at least one exhaust port is arranged below the exhaust ring at the lower part of the cavity body. The invention has the advantages of simple and reliable structure, good cleaning uniformity and stability, and the like.

Description

Substrate precleaning chamber

Technical Field

The invention relates to microelectronic manufacturing equipment, in particular to a substrate pre-cleaning chamber.

Background

The precleaning technology is widely applied to the microelectronic manufacturing process to remove contaminants, impurities and natural oxide layers on the surface of a substrate, so that the subsequent deposition and coating process is facilitated, and the quality of a film layer is improved.

At present, the pre-cleaning of substrates by domestic scientific research institutions mainly comprises two treatment modes, namely, a plasma cleaning machine is independently configured, and the substrates are treated and then manually placed into deposition coating equipment for subsequent coating process; and the other method is to integrate the precleaning into a coating process chamber, utilize a base to bear the substrate, load radio frequency power on the base, utilize radio frequency bias to guide the argon ions ionized by the process gas to the substrate, bombard the upper surface of the substrate and realize the precleaning function.

The pre-cleaning function is integrated into the coating process cavity, and due to the existence of the cavity structure, the sputtering cathode above the base, the baffle and other parts, the potential distribution and the airflow distribution on the periphery of the upper surface of the base cannot be controlled, so that the plasma distribution is not uniform, the same bombardment effect on different positions of the upper surface of the substrate cannot be realized, and the cleaning uniformity is influenced. And if the plasma cleaning equipment is configured independently, the substrate after pre-cleaning needs to be exposed in the atmosphere and transferred to a process chamber of the coating equipment, so that secondary pollution is easily caused.

Disclosure of Invention

The invention aims to overcome the defects of the prior art and provide a substrate pre-cleaning chamber which is simple and reliable in structure and good in cleaning uniformity and stability.

In order to solve the technical problems, the invention adopts the following technical scheme:

the utility model provides a substrate washs cavity in advance, includes the cavity, the cavity lower part is equipped with the base of taking radio frequency power, the base outside is equipped with insulator ring and shielding ring in proper order, the base top is equipped with the inlet plate, cavity upper portion with be equipped with annular connecting piece between the inlet plate, be equipped with the baffle on the inlet plate, cavity upper portion is equipped with the air inlet, baffle, inlet plate and the coaxial arrangement of base, evenly be equipped with a plurality of even gas pockets on the inlet plate, the baffle side be equipped with a plurality of along the circumferencial direction evenly arrange and with the intercommunicating pore of the even gas pocket intercommunication of below, be equipped with the exhaust ring between the lateral wall of shielding ring and cavity, evenly be equipped with a plurality of exhaust holes along the circumferencial direction on the exhaust ring, the cavity lower part in the exhaust ring below is equipped with at least one gas vent.

As a further improvement of the above technical solution: and the side wall of the cavity is provided with a sheet conveying opening.

As a further improvement of the technical scheme: the diameter of the uniform air hole distribution is 40mm to 80mm larger than the diameter of the substrate.

As a further improvement of the technical scheme: the diameter of the baffle is 1/4 to 1/3 of the diameter of the substrate.

As a further improvement of the technical scheme: the diameter of the uniform air holes is 0.5mm to 1mm.

As a further improvement of the above technical solution: the height of the shielding ring is 3mm to 5mm higher than that of the base.

As a further improvement of the technical scheme: the insulating ring is in clearance fit with the shielding ring.

Compared with the prior art, the invention has the advantages that: the invention discloses a substrate pre-cleaning chamber, a diffusion chamber can be formed among the upper part of the chamber, an air inlet plate and an annular connecting piece, process gas enters the diffusion chamber from an air inlet and then enters all directions to realize first diffusion optimization, a baffle plate above the air inlet plate is used for shielding the air flow of the air inlet right above, the disturbance of the air flow in the diffusion chamber is increased, the distribution uniformity of the air flow is improved, the second diffusion optimization of the gas is realized, the diffused air flow part enters the lower part of the baffle plate from a gap between supporting pieces at the lower part of the baffle plate and then diffuses downwards from a uniform air hole at the lower part, the air flow at the periphery of the baffle plate directly diffuses downwards through the uniform air hole, the air flow passes through the uniform air hole and then diffuses mutually and optimizes in the space above a base to improve the uniformity, after the process gas enters the chamber from the air inlet plate, part of the gas is ionized under the action of radio frequency bias pressure loaded on the base to clean and etch the upper surface of the substrate, and part of the gas is exhausted through exhaust holes uniformly distributed on an exhaust ring and exhausted from the exhaust hole.

Drawings

FIG. 1 is a schematic diagram of a substrate pre-cleaning chamber according to the present invention.

Fig. 2 is a schematic structural view of the intake plate in the present invention.

Fig. 3 is a schematic view of the structure of the baffle in the present invention.

Fig. 4 is a schematic view of the structure of the vent ring in the present invention.

The reference numerals in the figures denote: 1. a cavity; 11. an air inlet; 12. an exhaust port; 13. a sheet conveying port; 2. a base; 3. an insulating ring; 4. a shield ring; 5. an air intake plate; 51. air homogenizing holes; 6. a baffle plate; 61. a support member; 62. a communicating hole; 7. an exhaust ring; 71. An exhaust hole; 8. an annular connector; 9. a substrate.

Detailed Description

The invention is described in further detail below with reference to the figures and specific examples of the specification.

Fig. 1 to 4 show an embodiment of a substrate pre-cleaning chamber according to the present invention, which includes a chamber 1, a base 2 with radio frequency power is disposed at a lower portion of the chamber 1, an insulating ring 3 and a shielding ring 4 are sequentially disposed at an outer side of the base 2, an air inlet plate 5 is disposed above the base 2, an annular connecting member 8 is disposed between an upper portion of the chamber 1 and the air inlet plate 5, a baffle plate 6 is disposed on the air inlet plate 5, an air inlet 11 is disposed at an upper portion of the chamber 1, the air inlet 11, the baffle plate 6, the air inlet plate 5 and the base 2 are coaxially disposed, a plurality of air-equalizing holes 51 are uniformly disposed on the air inlet plate 5, a plurality of supporting members 61 are uniformly disposed at a lower portion of the baffle plate 6 along a circumferential direction, communicating holes 62 are formed between adjacent supporting members 61, an exhaust ring 7 is disposed between the shielding ring 4 and a side wall of the chamber 1, a plurality of exhaust holes 71 are uniformly disposed on the exhaust ring 7 along the circumferential direction, and at least one exhaust hole 12 is disposed below the lower portion of the chamber 1 and below the exhaust ring 7. Wherein, the exhaust port 12 can be connected with a vacuum pump, and process gas is pumped and exhausted by the vacuum pump; the air inlet plate 5 and the annular connecting piece 8 are preferably of an integrated structure; the baffle 6 and the support 61 are preferably of an integral structure, and in other embodiments, a bent communication hole 62 can be arranged in the baffle 6 to communicate with the lower air homogenizing hole 51.

The substrate precleaning chamber comprises a chamber body 1, a diffusion chamber body can be formed between an air inlet plate 5 and an annular connecting piece 8, process gas enters the diffusion chamber body from an air inlet 11 and then is diffused and optimized for the first time in all directions, a baffle plate 6 above the air inlet plate 5 is used for shielding airflow of the air inlet 11 right above, disturbance of the airflow in the diffusion chamber body is increased, airflow distribution uniformity is improved, secondary diffusion optimization of the gas is achieved, the diffused airflow part enters the position below the baffle plate 6 from a gap between supporting pieces 61 below the baffle plate 6 and then diffuses downwards from an air uniform hole 51 below, airflow around the baffle plate 6 directly diffuses downwards through the air uniform hole 51, after the airflow passes through the air uniform hole 51, the airflow is diffused and optimized for the second time in the space above a base 2, uniformity is improved, after the process gas enters the chamber body 1 from the air inlet plate 5, part of the gas is ionized under the action of radio frequency bias loaded on the base 2, the upper surface of a substrate 9 is cleaned and etched, and part of the gas is exhausted through exhaust holes 71 uniformly arranged on an exhaust ring 7 and an exhaust hole 12 below, and the substrate precleaning chamber body can be uniform, and the process gas can be cleaned uniformly, and the process uniformity of the optimized, and the process gas can be ensured, and the uniformity of the process.

Further, in the present embodiment, a sheet conveying port 13 is disposed on a side wall of the cavity 1. The pre-cleaning chamber can be butted with other process chambers through the wafer transfer port 13, and the cleaned substrate is transferred to other process chambers under the condition that the atmosphere is not exposed.

In the preferred embodiment, the diameter of the distribution of the gas holes 51 is 40mm to 80mm larger than the diameter of the substrate 9, or the range covered by the gas holes 51 is 40mm to 80mm larger than the diameter of the substrate 9, which is beneficial to maintaining the uniformity of the process gas.

In the preferred technical scheme, in the embodiment, the diameter of the baffle 6 is 1/4 to 1/3 of the diameter of the substrate 9, which is beneficial to increasing the disturbance of the airflow in the diffusion cavity and further improving the uniformity of the airflow distribution.

In the present embodiment, the diameter of the uniform air holes 51 is 0.5mm to 1mm.

In the preferred embodiment, the height of the shielding ring 4 is 3mm to 5mm higher than the height of the base 2, and the exhaust ring 7 is flush with the insulating ring 3.

In the present embodiment, the insulating ring 3 and the shielding ring 4 are preferably in clearance fit.

Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make many possible variations and modifications to the disclosed solution, or modify equivalent embodiments using the teachings disclosed above, without departing from the scope of the solution. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention should fall within the protection scope of the technical scheme of the present invention, unless the technical spirit of the present invention departs from the content of the technical scheme of the present invention.

Claims

1. A substrate pre-cleaning chamber, comprising: comprises a cavity body (1), a base (2) with radio frequency power is arranged at the lower part of the cavity body (1), an insulating ring (3) and a shielding ring (4) are sequentially arranged on the outer side of the base (2), an air inlet plate (5) is arranged above the base (2), an annular connecting piece (8) is arranged between the upper part of the cavity (1) and the air inlet plate (5), a baffle (6) is arranged on the air inlet plate (5), an air inlet (11) is arranged at the upper part of the cavity (1), the air inlet (11), the baffle (6), the air inlet plate (5) and the base (2) are coaxially arranged, a plurality of air homogenizing holes (51) are uniformly arranged on the air inlet plate (5), the side surface of the baffle (6) is provided with a plurality of communicating holes (62) which are uniformly arranged along the circumferential direction and are communicated with the uniform air holes (51) below, an exhaust ring (7) is arranged between the shielding ring (4) and the side wall of the cavity (1), a plurality of exhaust holes (71) are uniformly arranged on the exhaust ring (7) along the circumferential direction, at least one exhaust port (12) is arranged below the exhaust ring (7) at the lower part of the cavity (1), the lower part of the baffle (6) is uniformly provided with a plurality of supporting pieces (61) along the circumferential direction, and the communication holes (62) are formed between the adjacent supporting pieces (61).

2. The substrate pre-cleaning chamber of claim 1, wherein: the side wall of the cavity (1) is provided with a sheet conveying opening (13).

3. The substrate pre-cleaning chamber of claim 1 or 2, wherein: the diameter of the distribution of the even air holes (51) is 40mm to 80mm larger than that of the substrate (9).

4. The substrate pre-cleaning chamber of claim 3, wherein: the diameter of the baffle (6) is 1/4 to 1/3 of the diameter of the substrate (9).

5. The substrate pre-cleaning chamber of claim 1 or 2, wherein: the diameter of the air homogenizing hole (51) is 0.5mm to 1mm.

6. The substrate pre-cleaning chamber of claim 1 or 2, wherein: the height of the shielding ring (4) is 3mm to 5mm higher than that of the base (2).

7. The substrate pre-cleaning chamber of claim 1 or 2, wherein: the insulating ring (3) is in clearance fit with the shielding ring (4).