CN114823990A - Heterojunction battery efficiency improving method - Google Patents
Heterojunction battery efficiency improving method Download PDFInfo
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- CN114823990A CN114823990A CN202210466722.0A CN202210466722A CN114823990A CN 114823990 A CN114823990 A CN 114823990A CN 202210466722 A CN202210466722 A CN 202210466722A CN 114823990 A CN114823990 A CN 114823990A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
Abstract
The invention provides a method for improving the efficiency of a heterojunction battery, relates to the technical field of heterojunction batteries, and can synchronously solve the problems of surface pollution, oxidation and water vapor adsorption of a silicon wafer without influencing the working rhythm of PVD equipment. The method comprises the steps of texturing cleaning, amorphous silicon deposition, TCO film preparation and grid line preparation, wherein amorphous silicon surface treatment is added before the TCO film preparation step, so that the problems of pollution and oxidation possibly existing on the surface of amorphous silicon in the heterojunction cell preparation process are solved, and water vapor adsorbed on the surface of a tray is removed; the amorphous silicon surface treatment is realized by adopting a planar ICP plasma source; specifically, a plurality of coils are arranged on the top of the vacuum side; the coil is connected with an external RF matcher and used for generating radio frequency magnetic flux, and the radio frequency magnetic flux accelerates electrons in a radio frequency electric field induced along the axial direction so as to generate plasma; the silicon wafer to be subjected to surface treatment and deposited with amorphous silicon is positioned below the coil and sequentially passes through the plasma region at a preset speed.
Description
Technical Field
The invention relates to the technical field of heterojunction batteries, in particular to a method for improving efficiency of a heterojunction battery.
Background
The process flow of the prior heterojunction cell is shown in fig. 1. The method mainly comprises the steps of texturing cleaning, amorphous silicon deposition, TCO film preparation and grid line preparation.
The existing heterojunction battery preparation process has the main problems that: although most of manufacturers store products (cells with deposited amorphous silicon) in a nitrogen cabinet for protection after deposition of amorphous silicon and before deposition of a TCO film, the problems of pollution, oxidation and the like of the amorphous silicon surface cannot be completely avoided due to various situations such as transportation, staying in an atmospheric environment and the like in the middle of the amorphous silicon deposition and before deposition of the TCO film, the body performance of the amorphous silicon film and the contact performance of the amorphous silicon film and the TCO film are finally affected, so that the efficiency loss is caused, and the pollution and oxidation occurrence positions are shown in FIG. 2.
In addition, after the tray for conveying the silicon wafer is deposited with the ITO film layer in the TCO film deposition process, the water vapor can be quickly physically adsorbed on the surface of the tray and saturated in the transmission and waiting processes of the carrier plate in the atmosphere due to the characteristic that the ITO film layer is easy to adsorb the water vapor. The tray is loaded with the silicon wafer and then enters the vacuum chamber, the adsorption rate on the surface is reduced due to the change of the air pressure, and the whole tray is desorbed by water vapor in the vacuum chamber. Desorption of tray moisture directly affects the moisture content of the overall film forming atmosphere. The deposition atmosphere of the common TCO film has strict requirements on water vapor, and the electrical and optical properties of the TCO film are influenced by the high water vapor content, so that the efficiency of the cell is finally influenced. The trend of cell efficiency at different moisture content on the production line is shown in fig. 3.
At present, equipment and battery manufacturers on the market still use a nitrogen cabinet to store the nitrogen cabinet to reduce pollution, and desorb the water vapor on the surface of the tray as soon as possible by a heating mode in the vacuum chamber, but the heating time of the tray in the vacuum chamber is contradictory to the production cycle required by the equipment (the high yield of the equipment requires short production cycle time, and the longer heating time is beneficial to the rapid desorption of the water vapor), and the problem is not fundamentally solved.
Therefore, it is necessary to develop a new method for improving efficiency of a heterojunction cell to overcome the shortcomings of the prior art, so as to solve or alleviate one or more of the above problems.
Disclosure of Invention
In view of the above, the invention provides a method for improving efficiency of a heterojunction battery, which can synchronously solve the problems of pollution, oxidation and water vapor adsorption on the surface of a silicon wafer, improve the conversion efficiency of the battery and do not affect the working cycle of a PVD device.
The invention provides a heterojunction battery efficiency improving method which comprises the steps of texturing cleaning, amorphous silicon deposition, TCO film preparation and grid line preparation, wherein amorphous silicon surface treatment is added before the TCO film preparation step, so that the problems of pollution and oxidation on the surface of an amorphous silicon wafer in the heterojunction battery preparation process are solved, and water vapor adsorbed on the surface of a tray is removed.
The above aspect and any possible implementation manner further provide an implementation manner, wherein the amorphous silicon surface treatment is implemented by using a planar ICP plasma source;
specifically, a plurality of coils are arranged on the top of the vacuum side; the coil is connected with an external RF matcher and used for generating radio frequency magnetic flux, and the radio frequency magnetic flux accelerates electrons in a radio frequency electric field induced along the axial direction so as to generate plasma;
and the amorphous silicon wafer to be subjected to surface treatment is positioned below the coil and sequentially passes through the plasma region at a preset speed.
The aspect and any possible implementation manner described above further provide an implementation manner, and the set width and length of the coil are matched with the amorphous silicon wafer to be processed, so that large-area amorphous silicon wafer surface processing can be realized.
The above aspects and any possible implementation manner further provide an implementation manner that the planar ICP plasma source is arranged at a reserved cathode position of the PVD device.
The above-described aspect and any possible implementation further provides an implementation manner, where the parameters of the amorphous silicon surface processing under the condition of 1m/min traveling speed include: the number of turns of the coil is 1-2, the RF power of the planar ICP plasma source is 400-1000W, the distance between the coil and the amorphous silicon wafer to be processed is more than 100mm, and the vacuum degree is less than 0.8 pa. Aiming at the range of the walking speed which can be 1-4m/min, other parameters corresponding to different walking speeds have certain changes.
The above aspect and any possible implementation further provide an implementation, wherein the number of coil turns is 2.
The above-described aspects and any possible implementations further provide an implementation with an RF power of 500W.
The above-mentioned aspects and any possible implementation manner further provide an implementation manner that the distance between the coil and the amorphous silicon wafer to be processed is 100mm-200 mm.
The above aspects and any possible implementations further provide an implementation where the vacuum is 0.5pa to 0.8 pa. The vacuum degree is the environmental pressure obtained by performing discharge atmosphere gas distribution after ultimate vacuum pumping.
Compared with the prior art, the invention has the following advantages or beneficial effects: the ICP plasma source can generate high-density low-energy plasma, has wide working pressure range, is perfectly adapted to a heterojunction battery process, and removes pollutants and an oxide layer on the surface of an amorphous silicon film layer on the basis of not damaging the original amorphous silicon film layer;
another technical scheme in the above technical scheme has the following advantages or beneficial effects: the ICP ion source is used for desorbing water vapor adsorbed by the carrier plate in the atmosphere by the characteristics of controllable energy and large process window, so that the process is stabilized on the basis of no loss of the beat time;
another technical scheme in the above technical scheme has the following advantages or beneficial effects: the surface treatment and the TCO film deposition process are fused together, so that the surface treatment can be completed without increasing the machine and influencing the beat of the PVD equipment;
another technical scheme in the above technical scheme has the following advantages or beneficial effects: the ICP plasma source generator with the structure can adjust the plasma coverage width and length according to equipment requirements, so that a large-area sample can be processed, and the ICP plasma source generator is suitable for mass production and introduction;
another technical scheme in the above technical scheme has the following advantages or beneficial effects: the ICP plasma source generator has simple structure and layout, low maintenance cost and long service cycle, and does not influence the uptime of the equipment (namely, the availability ratio of the equipment, the production time/total time of the equipment is 100%).
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a flow diagram of a prior art heterojunction cell fabrication;
fig. 2 is a graph indicating the location of contamination and oxidation of a prior art heterojunction cell;
FIG. 3 is a graph showing the transition change of the battery efficiency of the existing heterojunction battery production line under different water vapor contents;
fig. 4 is a flow chart of a process for fabricating a heterojunction cell provided by an embodiment of the invention;
FIG. 5 is a schematic diagram of a plasma source generator according to an embodiment of the present invention;
FIG. 6 is a layout diagram of a plasma source generator according to one embodiment of the present invention;
FIG. 7 is a graph of the number of coil turns versus FF fill factor provided by one embodiment of the invention;
FIG. 8 is a graph of FF fill factor versus RF power provided by one embodiment of the invention;
FIG. 9 is a graph of FF fill factor versus distance between the coil and the substrate provided by one embodiment of the invention;
FIG. 10 is a graph of FF fill factor versus film formation pressure provided by one embodiment of the invention;
FIG. 11 is a graph of the difference in moisture partial pressure of the front and back chambers versus the number of coil turns provided by one embodiment of the present invention;
FIG. 12 is a graph of the differential water vapor pressure of the front and back chambers versus RF power provided by an embodiment of the present invention;
FIG. 13 is a graph of the differential water vapor pressure of the front and back chambers versus the distance between the coil and the substrate according to one embodiment of the present invention;
FIG. 14 is a graph of the differential water vapor pressure of the front and back chambers versus the film forming pressure, according to one embodiment of the present invention.
Detailed Description
For better understanding of the technical solutions of the present invention, the following detailed descriptions of the embodiments of the present invention are provided with reference to the accompanying drawings.
It should be understood that the described embodiments are only some embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in the examples of the present invention and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. "first", "second" and "third" are merely descriptive references made for distinction. It should also be understood that the term "and/or" as used herein is merely one type of associative relationship that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.
Aiming at the defects of the prior art, the invention provides a heterojunction cell efficiency improving method, wherein the preparation process flow of the heterojunction cell is shown in fig. 4, and on the basis of the processes of original texturing cleaning, amorphous silicon deposition, TCO film preparation and grid line preparation, an amorphous silicon surface treatment step is added before the TCO film preparation so as to improve and avoid the pollution and oxidation problems of the amorphous silicon surface in the prepared heterojunction cell, thereby ensuring the body performance of the amorphous silicon film layer and the contact effect of the amorphous silicon film layer and the TCO film and improving the cell efficiency.
The invention is realized by adopting an independently developed planar ICP (inductively coupled plasma) plasma source generator when processing the surface of the amorphous silicon, wherein the plasma source generator mainly comprises a discharge chamber, a radio frequency antenna, a radio frequency power supply and an air inlet system. The length and the width of the discharge chamber can be customized according to the actual cavity requirement; the radio frequency antenna and the discharge chamber are designed in an insulating way; the gas inlet system can be used for multi-stage gas distribution to ensure uniformity, fig. 5 is a structural diagram of the ion source emitter, two-stage gas distribution design is made in the diagram, the atmosphere side and the vacuum side are in an up-and-down relationship in fig. 5, the plane where the cavity cover flange is located is used as a boundary, the vacuum side is arranged below the cavity cover flange, and the atmosphere side is arranged above the cavity cover flange.
According to an embodiment of the present invention, the ICP ion source is mainly composed of a gas feeding path, an electrical feeding circuit, and a cooling water circuit, all of which are disposed on a cover of the vacuum chamber. Wherein the gas feed-in passage: inert gas is fed into the vacuum side through a plurality of gas distribution holes which are divided into a plurality of sections after being controlled by a pipeline and an MFC; the MFC controller is arranged above the cavity cover and is used for controlling the flow and/or the quality of the fed gas so that the gas can be fed in the amount required by the process; the air distribution hole is arranged below the cavity cover and at the upper inner part of the vacuum cavity, and during air distribution, air fed into the air distribution hole is uniformly sprayed downwards, so that the uniform distribution of air pressure in each part of the cavity can be ensured. The power is fed electrically from an RF power supply (disposed in an electrical cabinet, not shown in fig. 5) to an RF matching unit, and then the power is fed to a copper coil via a copper tape after matching plasma impedance with the matching unit (connected via a coaxial cable). The copper coil is fixedly arranged below the cavity cover, and is insulated from the whole cavity cover through the insulating cushion block. The chamber cover is at the ground point, i.e. the chamber cover is connected to ground. The cooling water and the electrical feed-in loop can share one copper water pipe to feed in, the copper water pipe is arranged at one end of the cavity cover, and the water supply pipeline and the electrical feed-in connecting wire extend into the vacuum cavity. The copper water pipe is hermetically connected with the cavity cover and the copper water pipe, so that the vacuum state in the vacuum cavity is ensured. The cooling water enters the internal circulation through the copper wire pipe and then is discharged from the water return port beside the feed-in port, so that the copper coil is cooled.
In the above embodiment, the MFC controller may be an existing controller, which is not limited in the present invention; the RF power supply and the RF matcher also adopt the existing power supply and matcher meeting the requirements of the process parameters, and the invention is not limited in the same way.
The working principle of the ICP plasma source is as follows: when radio-frequency power is applied to the coil through the RF matcher, radio-frequency current passes through the coil, and then radio-frequency magnetic flux is generated; the radio frequency magnetic flux induces an outgoing radio frequency electric field along the axial direction in the discharge chamber; the electrons therein are accelerated by the electric field to thereby generate plasma, while the energy of the coil is coupled into the plasma. The copper coil is a rectangular coil or a circular coil, but the flatness of the rectangular coil in the horizontal direction and the straightness of the rectangular coil or the arc degree of the circular coil need to be ensured so as to ensure the plane shape and the uniformity of the ion source projected on the surface of the amorphous silicon wafer.
The ICP plasma source generator can generate high-density low-energy plasma, the working pressure is wide, the ICP plasma source generator is perfectly matched with a heterojunction battery process, and pollutants and an oxide layer on the surface of the amorphous silicon film layer are removed on the basis of not damaging the original amorphous silicon film layer. The ICP plasma source generator can realize large-area silicon wafer processing, is suitable for the trend of large capacity of the current heterojunction equipment, and is suitable for mass production.
In the above embodiment, the layout of the ICP plasma source generator is as shown in fig. 6. The planar ICP plasma source structure can be completely arranged according to the size of the opening of the cavity of the PVD equipment and the effective width of a sample, and the ion source is arranged on the reserved cathode position of the PVD equipment, so that extra cost such as transformation is hardly generated in the layout, and the production beat and the yield of the equipment are not influenced. The working process comprises the following steps:
1. after the amorphous silicon deposition of the battery is finished, transferring the battery to a nitrogen gas cabinet or PVD automation;
2, automatically loading the battery piece subjected to amorphous silicon deposition into a PVD tray by PVD;
3. the tray is transferred to C1, the gate valve between automation and C1 is closed, the pump down is performed, the gate valve between C1 and C2 is opened after the pump down is completed, the tray is transferred to C2, the gate valve between C1 and C2 is closed, and the gate valve between C2 and C3 is opened;
4. the tray is conveyed into C3, then conveyed into C4 at a process speed, and when the tray passes through an ICP ion source in the C4 transmission process, the ion source processes the surface of the silicon wafer; the process personnel adjust the RF power of the ion source according to the transmission speed so as to realize the rapid desorption of the water vapor on the surface of the tray and the treatment of the pollutants and the oxide layer on the surface of the silicon chip loaded on the tray;
5. and continuously transmitting forwards to finish the deposition of the TCO film, and transmitting the TCO film out of the PVD equipment after the deposition of the TCO is finished.
The important work after the ion source is added in the invention is to adjust various parameters or settings of the ion source to achieve the best effect, and the aspects needing to achieve the best effect comprise: 1. removing pollutants and oxide layers on the surface of the silicon wafer; 2. the effect of quick desorption tray surface absorption steam.
The following are preferred configurations summarized according to test data, the main relevant parameters are the number of turns of the coil, the power supply power, the distance between the coil and the substrate, the size of the opening of the shielding plate, the traveling speed of the tray, the gas flux (pressure/film forming pressure) and the like, and the result is guided to be the performance parameter of the battery and the water vapor partial pressure peak value of the cavity after the tray enters the next cavity (tested by using a residual gas analyzer).
1. Removing silicon wafer pollutants and oxide layers (characterization parameters: cell conversion efficiency and filling factor):
the FF fill factor as a function of the number of coil turns is shown in fig. 7. As can be seen from FIG. 7, under the condition that other variable conditions are kept unchanged, the number of coil turns is increased positively by FF within 1-2 turns, wherein the optimal configuration is achieved when the number of coil turns is 2 turns. The table in the figure is the setting values of other variables, and the relationship between the number of coil turns and the FF filling factor is tested under the condition that the values of other variables are not changed, and the same is carried out below.
The FF fill factor as a function of RF power is shown in fig. 8. As can be seen from fig. 8, under the condition that other variable conditions are not changed, the FF filling factor is basically kept unchanged without obvious effect when the RF power is between 100-300W, and the RF power is obviously increased when the RF power is between 400-1000W, and is optimally configured at 500W; when the RF power is 2000W, obvious FF reduction can be seen, and the damage to the amorphous silicon film layer caused by the excessive energy of the ion source emission particles is guessed to be caused when the power is too high.
The FF fill factor as a function of coil to substrate distance is shown in fig. 9. From the test results, it was found that, under the conditions of other variables and conditions, the distance between the coil and the substrate exhibited a loss of FF at 80mm, a certain rise at 100mm, and an optimum value at 200mm, and it was found that the distance between the coil and the substrate was preferably set to 200mm or more.
The variation of the FF fill factor with film formation pressure is shown in fig. 10. From the test results, it was found that the film forming pressure showed a significant increase at 0.5pa or less, 0.5pa being the optimum arrangement, and was almost equal to the reference at 0.8pa, and the FF began to decrease by 1pa, without changing the other variable conditions.
In summary, the optimal configuration at 1m/min is shown in Table 1.
TABLE 1
2. Removing water vapor adsorbed on the surface of the tray (characterization parameter: difference between partial pressure of water vapor in a chamber before processing by the ion source and partial pressure of water vapor tested in a chamber after processing, and the partial pressure of water vapor before processing is unified by controlling variables)
The variation of the moisture partial pressure difference of the front and rear chambers with the number of turns of the coil is shown in fig. 11. According to the test result, under the condition that other variable conditions are kept unchanged, moisture on the surface of the tray after ICP treatment is obviously reduced, but the number of turns of different coils does not have obvious difference of moisture partial pressure difference values of the front chamber and the rear chamber, and the difference of the number of turns of different coils on moisture removal is not large.
The difference in moisture partial pressures of the front and back chambers as a function of RF power is shown in fig. 12. According to the test results, under the condition that other variables are consistent, the water vapor removal amount on the surface of the tray is proportional to the RF power, and the higher the RF power is, the higher the water vapor removal rate of the tray is.
The difference in the partial pressure of water vapor in the front and back chambers as a function of the distance between the coil and the substrate is shown in fig. 13. According to the test result, under the condition that other variables are kept consistent, the water vapor removal amount is increased along with the distance between the coil and the substrate, and basically keeps unchanged after the distance reaches 100mm, so that the optimal distance between the substrate and the coil is more than or equal to 100 mm.
The variation of the difference between the partial pressures of water vapor in the front and rear chambers with the film forming pressure is shown in FIG. 14. According to the test results, under the condition that other variables are consistent, the moisture content is obviously reduced after ICP treatment, and the optimal moisture removal effect is obtained under the condition of 0.5-0.8 pa.
In summary, the optimal configuration for water vapor removal at 1m/min is shown in Table 2.
TABLE 2
The optimal process configuration at a travel speed of 1m/min is shown in Table 3, which combines the water vapor removal effect and the test results of removing pollutants and oxide layers.
TABLE 3
| Parameter(s) | Numerical value | Unit of |
| Number of turns of coil | 2 | Ring |
| Distance between coil and substrate | 200 | |
| RF power | ||
| 500 | W | |
| Film forming pressure | 0.5 | |
| Tray speed | ||
| 1 | m/min | |
| Size of opening of |
150 | mm |
The above description of the embodiments is only for the purpose of helping to understand the method of the present application and its core ideas; meanwhile, for a person skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (9)
1. The method is characterized in that amorphous silicon surface treatment is added before the TCO film preparation step, so that the problems of pollution and oxidation of the surface of an amorphous silicon wafer in the heterojunction battery preparation process are solved, and water vapor adsorbed on the surface of a tray is removed.
2. The heterojunction battery efficiency improvement method according to claim 1, wherein the amorphous silicon surface treatment is realized by adopting a planar ICP plasma source;
specifically, a plurality of coils are arranged on the top of the vacuum side; the coil is connected with an external RF matcher and used for generating radio frequency magnetic flux, and the radio frequency magnetic flux accelerates electrons in a radio frequency electric field induced along the axial direction so as to generate plasma;
and the amorphous silicon wafer to be subjected to surface treatment is positioned below the coil and sequentially passes through the plasma region at a preset speed.
3. The heterojunction battery efficiency improvement method according to claim 2, wherein the set width and length of the coil are matched with the amorphous silicon wafer to be processed, so that large-area amorphous silicon wafer surface treatment can be realized.
4. The method according to claim 2, wherein the planar ICP plasma source is disposed at a reserved cathode position of the PVD equipment.
5. The heterojunction cell efficiency enhancement method of claim 2, wherein the parameters of the amorphous silicon surface treatment under the condition of 1m/min traveling speed comprise: the number of turns of the coil is 1-2, the RF power of the planar ICP plasma source is 400-1000W, the distance between the coil and the amorphous silicon wafer to be processed is more than 100mm, and the vacuum degree is less than 0.8 pa.
6. The heterojunction cell efficiency enhancement method of claim 5, wherein the number of coil turns is 2 turns.
7. The heterojunction cell efficiency enhancement method of claim 5, wherein the RF power is 500W.
8. The heterojunction cell efficiency improvement method of claim 5, wherein the distance between the coil and the amorphous silicon wafer to be processed is 100mm-200 mm.
9. The heterojunction cell efficiency enhancement method of claim 5, wherein the degree of vacuum is 0.5pa to 0.8 pa.
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| CN115274935A (en) * | 2022-08-09 | 2022-11-01 | 中威新能源(成都)有限公司 | TCO (transparent conductive oxide) coating method, TCO coating equipment, solar cell and preparation method thereof |
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