CN107369604A - Reaction chamber and semiconductor processing equipment - Google Patents
Reaction chamber and semiconductor processing equipment Download PDFInfo
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- CN107369604A CN107369604A CN201610318302.2A CN201610318302A CN107369604A CN 107369604 A CN107369604 A CN 107369604A CN 201610318302 A CN201610318302 A CN 201610318302A CN 107369604 A CN107369604 A CN 107369604A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 83
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 17
- 239000003990 capacitor Substances 0.000 claims description 11
- 230000005611 electricity Effects 0.000 claims description 6
- 230000005672 electromagnetic field Effects 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 25
- 238000009826 distribution Methods 0.000 abstract description 16
- 238000000034 method Methods 0.000 description 34
- 239000007789 gas Substances 0.000 description 16
- 238000009616 inductively coupled plasma Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 230000006978 adaptation Effects 0.000 description 7
- 239000007858 starting material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 108010022579 ATP dependent 26S protease Proteins 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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Abstract
The present invention provides a kind of reaction chamber and semiconductor processing equipment, including Top electrode device and lower electrode device, and the lower electrode device is arranged in reaction chamber, for bearing wafer.Top electrode device includes medium cylinder, coil, upper power power-supply and top electrode assembly, wherein, medium cylinder is arranged on the top of reaction chamber；Coil encircling is arranged on the periphery of medium cylinder；Top electrode assembly includes electric pole plate, and the electric pole plate is arranged on the top of medium cylinder；Upper power power-supply is used to load exciting power to electric pole plate and coil simultaneously or respectively.Reaction chamber provided by the invention, it can not only reduce the voltage differences between the output end of coil and input, and can weaken the uneven caused influence of electric field by coil, so as to improve the density distribution uniformity of plasma.
Description
Technical field
The present invention relates to field of semiconductor manufacture, in particular it relates to a kind of reaction chamber and half
Conductor process equipment.
Background technology
It is conventional for dry etch process and thin film deposition processes in semiconductor applications
Plasma source include inductively coupled plasma (Inductive Coupled Plasma, with
Lower abbreviation ICP) source and capacitively coupled plasma (capacitance Couple Plasma,
Hereinafter referred to as CCP) source.Wherein, ICP source electric field excitation as caused by electric current by coil
Reacting gas produces plasma, and ICP source has plasma density high, small to workpiece damage
The features such as.CCP sources by between being applied to battery lead plate voltage provocative reaction gas produce etc. from
Daughter, CCP sources have the characteristics that large-area uniformity is good, ion energy is high.
Fig. 1 is the sectional view of the reaction chamber of existing ICP source.As shown in figure 1, reaction
Chamber 10 is limited and formed by top cover 11, medium window 12 and cavity 19, specifically, medium window
12 are cylindrical in shape structure, and are arranged on the top of cavity 19, the lower openings of medium window 12 with
The upper opening of cavity 19 is connected；Top cover 11 is arranged on the top of medium window 12, will
The upper opening closing of medium window 12.Moreover, the center position in top cover 11 is additionally provided with
Reacting gas is delivered in reaction chamber 10 by air inlet, source of the gas 15 by the air inlet.This
Outside, wrapping around for medium window 12 is provided with coil 13, input (Fig. 1 of coil 13
In left side one end of coil 13 for showing) electrically connected with radio-frequency power supply 14, the output of coil 13
(the right side one end of coil 13 shown in Fig. 1) ground connection is held, and in reaction chamber 10 also
Pedestal 16 is provided with, to bearing wafer 17, the pedestal 16 electrically connects with radio-frequency power supply 18.
Above-mentioned reaction chamber is inevitably present problems with actual applications：
First, due to being influenceed by loop construction, high-frequency electric field is often as caused by coil
It is distributed in M types, it is this to be distributed the density for causing the caused plasma in reaction chamber
It is distributed in M types, so as to cause wafer surface plasma Density Distribution uneven, Jin Erying
Ring process uniformity.
Second, due to the output head grounding of coil, between the output end and input of coil
Voltage phase difference is larger, causes voltage along coil surface skewness, so as to cause to be produced by coil
Raw magnetic distribution is uneven.Gone here and there although can use between the output end of coil and earth terminal
Joining the method for an electric capacity makes the voltage between the output end of coil and input consistent, but
It is to make in fact, this method can not be realized really between the output end of coil and input
Voltage is consistent, because：When carrying out technique, capacitive between coil and plasma be present
Coupling, this capacitively coupled effect cause to be connected between the output end of coil and earth terminal
Capacitor's capacity produces change with the change of discharging condition, so as to cause to be connected on the output of coil
There is relatively large deviation in the actual capacitance capacitance between end and earth terminal, enter with required capacitor's capacity
And make the voltage phase difference between the output end of coil and input larger, so as to which there are still by line
Caused by circle the problem of magnetic distribution inequality.
The content of the invention
It is contemplated that at least solve one of technical problem present in prior art, it is proposed that
A kind of reaction chamber and semiconductor processing equipment, its can not only reduce the output end of coil with it is defeated
Enter the voltage differences between end, and the uneven caused shadow of electric field by coil can be weakened
Ring, so as to improve the density distribution uniformity of plasma.
To realize that the purpose of the present invention provides a kind of reaction chamber, including Top electrode device and
Lower electrode device, the lower electrode device are arranged in the reaction chamber, for bearing wafer,
The Top electrode device includes medium cylinder, coil, upper power power-supply and top electrode assembly, wherein,
The medium cylinder is arranged on the top of the reaction chamber；The coil encircling, which is arranged on, to be given an account of
The periphery of matter cylinder；The top electrode assembly includes electric pole plate, and the electric pole plate is arranged on institute
Give an account of the top of matter cylinder；The upper power power-supply is used for simultaneously or respectively to the electric pole plate
Exciting power is loaded with the coil.
Preferably, the upper power power-supply is one；The input of the coil with it is described on
Power power-supply electrically connects, and the output end of the coil electrically connects with the top electrode assembly.
Preferably, the upper power power-supply is one；The input of the coil with it is described on
Electrode assemblie electrically connects, the output head grounding of the coil, and the top electrode assembly and institute
State power power-supply electrical connection.
Preferably, the upper power power-supply is two；The input of the coil and wherein one
The individual upper power power-supply electrical connection, the output head grounding of the coil；The top electrode assembly
Electrically connected with upper power power-supply described in other in which.
Preferably, the reaction chamber also includes the radome of ground connection, and the radome cover is set
In the medium window and the periphery of the top electrode assembly, to shield as caused by the coil
Electromagnetic field.
Preferably, the reaction chamber also includes tunable capacitor, and the tunable capacitor is serially connected in
Between the radome and the top electrode assembly.
Preferably, at least one air inlet is provided with the electric pole plate, to institute
State and reacting gas is passed through in reaction chamber.
Preferably, the electric pole plate has the cavity as uniform flow chamber；In the uniform flow chamber
Top be provided with air inlet, to the uniform flow intracavitary convey reacting gas；Described even
The bottom of stream chamber is provided with multiple ventholes, and uniformly divides relative to the bottom surface of the uniform flow chamber
Cloth, equably the reacting gas of the uniform flow intracavitary is delivered in the reaction chamber.
Preferably, the lower electrode device includes pedestal and lower power power-supply, wherein, it is described
Pedestal is arranged in the reaction chamber, for bearing wafer；The lower power power-supply be used for
The pedestal loads radio-frequency power.
Preferably, the upper power power-supply includes low-frequency power or radio-frequency power supply.
As another technical scheme, the present invention also provides a kind of semiconductor processing equipment, wraps
Reaction chamber is included, the reaction chamber uses above-mentioned reaction chamber provided by the invention.
The invention has the advantages that：
Reaction chamber provided by the invention, its by electric pole plate, can in technique, with
Flat electric field is produced between lower electrode device, the flat electric field is relative to as caused by coil
Electric field plays a major role, so as to weaken because the electric field of coil it is uneven caused by influence, enter
And make the Density Distribution of the plasma to be formed evenly, so as to improve the close of plasma
Spend distributing homogeneity.Meanwhile by make upper power power-supply simultaneously or respectively to electric pole plate and
Coil loads exciting power, it is possible to achieve the ICP source that is formed by coil and by Top electrode plate shape
Into CCP sources discharge simultaneously, so as to not only can compatible CCP sources field uniformity and ICP
The two advantages of the higher plasma density in source, and by controlling such as plasma starter to join
The process conditions of number etc., can be to the sheaths that are formed between electric pole plate and plasma sheath
Electric capacity is adjusted in real time, so as to reduce the phase difference between coil both ends, so as to
To improve the uniformity of the electric field as caused by coil, and then further improve the density of plasma
Distributing homogeneity.
Semiconductor processing equipment provided by the invention, it is by using provided by the invention above-mentioned
Reaction chamber, it can not only reduce the voltage differences between the output end of coil and input, and
And the uneven caused influence of electric field by coil can be weakened, so as to improve plasma
Density distribution uniformity.
Brief description of the drawings
Fig. 1 is the sectional view of the reaction chamber of existing ICP source；
Fig. 2A is the sectional view for the reaction chamber that first embodiment of the invention provides；
Fig. 2 B are equivalent circuit diagram of the reaction chamber in technique in Fig. 2A；
Fig. 3 is cuing open for the Top electrode that a variant embodiment of first embodiment of the invention uses
View；And
Fig. 4 A are the sectional view for the reaction chamber that second embodiment of the invention provides；
Fig. 4 B are equivalent circuit diagram of the reaction chamber in technique in Fig. 4 A；
Fig. 5 A are the sectional view for the reaction chamber that third embodiment of the invention provides；
Fig. 5 B are equivalent circuit diagram of the reaction chamber in technique in Fig. 5 A；
Fig. 6 A are the sectional view for the reaction chamber that third embodiment of the invention provides；
Fig. 6 B are equivalent circuit diagram of the reaction chamber in technique in Fig. 6 A.
Embodiment
To make those skilled in the art more fully understand technical scheme, tie below
Accompanying drawing is closed reaction chamber provided by the invention and semiconductor processing equipment to be described in detail.
Fig. 2A is the sectional view for the reaction chamber that first embodiment of the invention provides.Refer to figure
2A, reaction chamber include Top electrode device and lower electrode device.Wherein, Top electrode device bag
Include medium cylinder 22, coil 23, upper power power-supply 24, the first adaptation 25, top electrode assembly.
Lower electrode device includes pedestal 27, lower power power-supply 28, the second adaptation 29.
Wherein, the chamber wall 21 of reaction chamber is grounded, and the chamber wall 21 has around top is formed
There is the cavity structure of opening；Medium cylinder 22 is arranged on the top of chamber wall 21, and by chamber wall
21 open top closing, and medium cylinder 22 includes space and the cavity phase of chamber wall 21
Connection.Moreover, top electrode assembly includes electric pole plate 26, it is in tabular, and is arranged on
The top of medium cylinder 22, and the open top of medium cylinder 22 is closed.
Moreover, coil 23 is circumferentially positioned at the periphery of medium cylinder 22, the input of the coil 23
End 231 is electrically connected by the first adaptation 25 with upper power power-supply 24, the output of coil 23
End 232 electrically connects with electric pole plate 26.When carrying out technique, upper power power-supply 24 includes low
Frequency power or radio-frequency power supply etc., it is used to apply low frequency or radio frequency etc. to coil 23
Exciting power, to produce plasma using electric field excitation reacting gas caused by coil 23.
At the same time, can be with by making the output end 232 of coil 23 be electrically connected with electric pole plate 26
Enable power power-supply 24 to electric pole plate 26 load exciting power, so as to realize by
ICP source that coil is formed and the CCP sources that are formed by electric pole plate while discharge, so that not only
Can compatible CCP sources field uniformity and the higher plasma density of ICP source the two are excellent
Gesture.
, can also be by making the output end 232 of coil 23 be electrically connected with electric pole plate 26
Capacity plate antenna structure is formed between electric pole plate 26 and the chamber wall 21 of ground connection, reaction chamber exists
Equivalent circuit diagram during technique is as shown in Figure 2 B.In fig. 2b, dashed rectangle represent etc. from
Daughter equivalent model.Plasma is made up of sheaths and plasma slab, wherein, sheaths can be with
It is equivalent to electric capacity and diode structure；Plasma slab can be equivalent to resistance and induction structure.
L is the electric current formed equivalent inductance by plasma.R is plasma equivalent resistance.C1
The the first sheath layer capacitance formed between electric pole plate 26 and plasma sheath.C2 is upper electricity
The collection spurious capacitance formed between pole plate 26 and ground.C3 be pedestal 27 and plasma sheath it
Between the second sheath layer capacitance for being formed.
From Fig. 2 B, when carrying out technique, electric pole plate 26 and the chamber wall 21 of ground connection
Between the capacity plate antenna structure that forms, while form collection spurious capacitance C2 and the first sheath layer capacitance
C1, wherein, the first sheath layer capacitance C1 can play the radio-frequency current phase of modulation coil 23
Effect, can be right so as to by controlling process conditions such as plasma starter parameter
First sheath layer capacitance C1 is adjusted in real time, with reduce the output end 231 of coil 23 with it is defeated
Enter the phase difference between end 232, and then the uniform of as caused by coil electric field can be improved
Property, so as to further improve the density distribution uniformity of plasma.
For lower electrode device, pedestal 27 is arranged in reaction chamber, and is located at electric pole plate
26 lower section, to bearing wafer.Also, pedestal 27 is by the second adaptation 29 with
Power power-supply 28 electrically connects, and the lower power power-supply 28 is used to pedestal 27 apply in technique
Back bias voltage, to attract the ion in plasma to be moved towards the direction of wafer surface.Lower power
Power supply 28 can be dc source, low-frequency power or radio-frequency power supply.
Pedestal 27 and electric pole plate 26 can produce flat electric field in technique, due to by
The intensity of electric field caused by coil 23 can be weakened by medium cylinder 22, the intensity of the flat electric field
Far above the intensity of the electric field as caused by coil 23, therefore, the flat electric field relative to by
Electric field caused by coil 23 plays a major role, so as to weaken because the electric field of coil 23 is uneven
Influenceed caused by even, and then make the Density Distribution of the plasma to be formed evenly, so as to
Improve the density distribution uniformity of plasma.
In the present embodiment, also it is covered with screen in the periphery of medium cylinder 22 and electric pole plate 26
Cover cover 30, as shown in Figure 2 A, the radome 30 and medium cylinder 22 and electric pole plate 26 it
Between form closing space, coil 23 is located in the closing space.Also, radome 30 is grounded,
When carrying out technique, radome 30 can shield the electromagnetic field as caused by coil 23, so as to keep away
Exempt from radio-frequency power supply to impact technique in radio-frequency radiation caused by feed-in power.
In the present embodiment, reaction chamber also includes air inlet pipeline 31 and source of the gas 33, wherein,
Electric pole plate 26 is run through in the outlet side of air inlet pipeline 31, and is connected with the inside of reaction chamber；
The inlet end of air inlet pipeline 31 is connected by insulation tube 32 with source of the gas 33.When carrying out technique,
The reacting gas provided by source of the gas 33 enters reaction via insulation tube 32 and air inlet pipeline 31 successively
In chamber.
In actual applications, reacting gas can also be conveyed into reaction chamber using other modes.
For example, being provided with air inlet on the electric pole plate, lead to via the air inlet into reaction chamber
Enter reacting gas.The air inlet can be one, and be arranged on the center of electric pole plate,
Or can also be multiple, and be distributed along uniform plane where electric pole plate.
And for example, as shown in figure 3, electric pole plate has the cavity as uniform flow chamber 40.Also,
At the top of uniform flow chamber 40, (that is, the top chamber locular wall of uniform flow chamber 40) is provided with air inlet
41, and be provided with the bottom of uniform flow chamber 40 (that is, the bottom chamber locular wall of uniform flow chamber 40)
Multiple ventholes 42, and relative to the bottom surface (plane where bottom chamber locular wall) of uniform flow chamber 40
It is uniformly distributed.When carrying out technique, reacting gas enters uniform flow chamber via air inlet 41 first
In 40, and spread to surrounding until be full of whole uniform flow chamber 40, reacting gas homogenized,
Then uniformly flowed into via each venthole 42 in reaction chamber.The flow direction of reacting gas is such as
Shown in arrow in Fig. 3.
Fig. 4 A are the sectional view for the reaction chamber that second embodiment of the invention provides.Refer to figure
4A, compared with above-mentioned first embodiment, its difference only exists the reaction chamber that the present embodiment provides
In：Tunable capacitor 50 is also serially connected between radome 30 and electric pole plate 26.
Fig. 4 B are equivalent circuit diagram of the reaction chamber in technique in Fig. 4 A.Such as Fig. 4 B institutes
Show, C4 is tunable capacitor 50, and the voltage of the output end 232 of coil 23 can be allocated to
One sheath layer capacitance C1 and tunable capacitor 50, i.e. tunable capacitor 50 can be played to coil 23
Both end voltage carries out the effect of partial pressure, and because its capacitance is adjustable, by adjusting tunable capacitor
Capacitance size in 50 access circuits, can be adjusted to the distribution of the both end voltage of coil 23
Section, to reduce the voltage differences between the output end 231 of coil 23 and input 232, from
And the uniformity of the electric field as caused by coil not only can be further improved, but also can improve
The flexibility of capacitance adjustment.
The 26S Proteasome Structure and Function of other devices or part in the present embodiment and above-mentioned first embodiment phase
It is similar, due to there has been detailed description in the above-described first embodiment, will not be repeated here.
Fig. 5 A are the sectional view for the reaction chamber that third embodiment of the invention provides.Fig. 5 B are
Equivalent circuit diagram of the reaction chamber in technique in Fig. 5 A.Also referring to Fig. 5 A and Fig. 5 B,
Compared with above-mentioned first embodiment, it is differed only in the reaction chamber that the present embodiment provides：Line
The input 231 of circle 23 electrically connects with electric pole plate 26, and the output end 232 of coil 23 is logical
Ground connection is crossed, and electric pole plate 26 passes through the first adaptation 25 and upper power power-supply
24 electrical connections.This, which can equally be realized, makes power power-supply 24 simultaneously to coil 23 and upper electricity
Pole plate 26 loads exciting power.
Equivalent circuit diagram of the reaction chamber in technique is as shown in Figure 5 B.In figure 5b, it is empty
Line square frame represents plasma equivalent model.Plasma is made up of sheaths and plasma slab,
Wherein, sheaths can be equivalent to electric capacity and diode structure；Plasma slab can be equivalent to electricity
Resistance and induction structure.L is the electric current formed equivalent inductance by plasma.R is plasma
Body equivalent resistance.The first sheaths that C1 is formed between electric pole plate 26 and plasma sheath
Electric capacity.The collection spurious capacitance that C2 is formed between electric pole plate 26 and ground.C3 be pedestal 27 with
The the second sheath layer capacitance formed between plasma sheath.
From Fig. 5 B, when carrying out technique, electric pole plate 26 and the chamber wall 21 of ground connection
Between form capacity plate antenna structure, the structure forms collection spurious capacitance C2 and the first sheath layer capacitance
C1, wherein, the first sheath layer capacitance C1 can play the radio-frequency current phase of modulation coil 23
Effect, can be right so as to by controlling process conditions such as plasma starter parameter
First sheath layer capacitance C1 is adjusted in real time, with reduce the output end 231 of coil 23 with it is defeated
Enter the relative different between end 232, and then the uniform of as caused by coil electric field can be improved
Property, so as to further improve the density distribution uniformity of plasma.
The 26S Proteasome Structure and Function of other devices or part in the present embodiment and above-mentioned first embodiment phase
It is similar, due to there has been detailed description in the above-described first embodiment, will not be repeated here.
Fig. 6 A are the sectional view for the reaction chamber that third embodiment of the invention provides.Fig. 6 B are
Equivalent circuit diagram of the reaction chamber in technique in Fig. 6 A.Also referring to Fig. 6 A and Fig. 6 B,
Compared with above-mentioned first embodiment, it is differed only in the reaction chamber that the present embodiment provides：On
Power power-supply is two, power power-supply 34 on power power-supply 24 and second on respectively first.
Also, the input 231 of coil 23 passes through power power-supply on the first adaptation 25 and first
24 electrical connections, the output end 232 of coil 23 pass through ground connection；Electric pole plate 26 is logical
The 3rd adaptation 35 is crossed to electrically connect with power power-supply on second 34.That is, upper power electricity
Source is by power power-supply 34 on power power-supply 24 and second on first, respectively to the He of coil 23
Electric pole plate 26 loads exciting power.
Equivalent circuit diagram of the reaction chamber in technique is as shown in Figure 6B.In fig. 6b, it is empty
Line square frame represents plasma equivalent model.Plasma is made up of sheaths and plasma slab,
Wherein, sheaths can be equivalent to electric capacity and diode structure；Plasma slab can be equivalent to electricity
Resistance and induction structure.L is the electric current formed equivalent inductance by plasma.R is plasma
Body equivalent resistance.The first sheaths that C1 is formed between electric pole plate 26 and plasma sheath
Electric capacity.The collection spurious capacitance that C2 is formed between electric pole plate 26 and ground.C3 be pedestal 27 with
The the second sheath layer capacitance formed between plasma sheath.
From Fig. 6 B, when carrying out technique, electric pole plate 26 and the chamber wall 21 of ground connection
Between form capacity plate antenna structure, while formed collection spurious capacitance C2 and the first sheath layer capacitance C1,
Wherein, the first sheath layer capacitance C1 can play the work of the radio-frequency current phase of modulation coil 23
With so as to the process conditions by control such as plasma starter parameter, to the first sheath
Layer capacitance C1 is adjusted in real time, to reduce the output end 231 of coil 23 and input 232
Between phase difference, and then the uniformity of the electric field as caused by coil can be improved, so as to enter
One step improves the density distribution uniformity of plasma.
Moreover, by power power-supply 34 on power power-supply 24 and second on first, can be independent
Ground controls plasma and the plasma as caused by electric pole plate 26 as caused by coil 23 respectively
Body.Therefore, by the process requirements of reality ICP source can be selected to work independently, CCP sources
Work independently or ICP source and CCP sources while work, so as to improve plasma production
Raw alternative.That is, power power-supply 24 on first is only opened in selection, or only
Power power-supply 34 on second is opened, or is opened simultaneously on first on power power-supply 24 and second
Power power-supply 34.
In addition, by power power-supply 34 on power power-supply 24 and second on first, can make
Battery lead plate 26, pedestal 27 and coil 23 form " three electrodes " structure, and the structure not only may be used
To improve the density of plasma, but also the adjustable window of plasma discharge can be expanded.
In summary, the reaction chamber that the above-mentioned each embodiment of the present invention provides, it can cut
It is weak because the electric field of coil it is uneven caused by influence so that the density point of the plasma formed
Cloth evenly, and then can improve the density distribution uniformity of plasma.Meanwhile Ke Yishi
The ICP source now formed by coil and the CCP sources formed by electric pole plate while discharge, so as to
Not only can compatible CCP sources field uniformity and ICP source higher plasma density this two
Individual advantage, and by controlling the process conditions such as plasma starter parameter, can be right
The sheath layer capacitance formed between electric pole plate and plasma sheath is adjusted in real time, so as to
The phase difference between coil both ends can be reduced, so as to improve the electric field as caused by coil
Uniformity, and then further improve plasma density distribution uniformity.
As another technical scheme, the embodiment of the present invention also provides a kind of semiconductor machining and set
Standby, it includes reaction chamber, and the reaction chamber employs the above-mentioned each embodiment of the present invention and provided
Reaction chamber.
Semiconductor processing equipment provided in an embodiment of the present invention, it is above-mentioned by using the present invention
The above-mentioned reaction chamber that each embodiment provides, can not only reduce output end and the input of coil
Voltage differences between end, and the uneven caused influence of electric field by coil can be weakened,
So as to improve the density distribution uniformity of plasma.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and
The illustrative embodiments of use, but the invention is not limited in this.For in the art
For those of ordinary skill, without departing from the spirit and substance in the present invention, it can do
Go out all variations and modifications, these variations and modifications are also considered as protection scope of the present invention.
Claims (11)
1. a kind of reaction chamber, including Top electrode device and lower electrode device, the bottom electrode
Device is arranged in the reaction chamber, for bearing wafer, it is characterised in that the upper electricity
Pole device includes medium cylinder, coil, upper power power-supply and top electrode assembly, wherein,
The medium cylinder is arranged on the top of the reaction chamber；
The coil encircling is arranged on the periphery of the medium cylinder；
The top electrode assembly includes electric pole plate, and the electric pole plate is arranged on the medium
The top of cylinder；
The upper power power-supply is used for simultaneously or respectively to the electric pole plate and the coil
Load exciting power.
2. reaction chamber according to claim 1, it is characterised in that the upper power
Power supply is one；
The input of the coil electrically connects with the upper power power-supply, the output of the coil
End electrically connects with the top electrode assembly.
3. reaction chamber according to claim 1, it is characterised in that the upper power
Power supply is one；
The input of the coil electrically connects with the top electrode assembly, the output of the coil
End ground connection, and the top electrode assembly electrically connects with the upper power power-supply.
4. reaction chamber according to claim 1, it is characterised in that the upper power
Power supply is two；
The input of the coil electrically connects with upper power power-supply one of them described, the line
The output head grounding of circle；
The top electrode assembly electrically connects with upper power power-supply described in other in which.
5. according to the reaction chamber described in claim 1-4 any one, it is characterised in that
The reaction chamber also include ground connection radome, the radome be located at the medium window and
The periphery of the top electrode assembly, to shield the electromagnetic field as caused by the coil.
6. reaction chamber according to claim 5, it is characterised in that the reaction chamber
Room also includes tunable capacitor, and the tunable capacitor is serially connected in the radome and the Top electrode group
Between part.
7. according to the reaction chamber described in claim 1-4 any one, it is characterised in that
At least one air inlet is provided with the electric pole plate, to lead into the reaction chamber
Enter reacting gas.
8. according to the reaction chamber described in claim 1-4 any one, it is characterised in that
The electric pole plate has the cavity as uniform flow chamber；
Air inlet is provided with the top of the uniform flow chamber, to be conveyed to the uniform flow intracavitary
Reacting gas；
Multiple ventholes are provided with the bottom of the uniform flow chamber, and relative to the uniform flow chamber
Bottom surface be uniformly distributed, the reacting gas of the uniform flow intracavitary is delivered to equably described
In reaction chamber.
9. according to the reaction chamber described in claim 1-4 any one, it is characterised in that
The lower electrode device includes pedestal and lower power power-supply, wherein,
The pedestal is arranged in the reaction chamber, for bearing wafer；
The lower power power-supply is used to load radio-frequency power to the pedestal.
10. according to the reaction chamber described in claim 1-4 any one, it is characterised in that
The upper power power-supply includes low-frequency power or radio-frequency power supply.
11. a kind of semiconductor processing equipment, including reaction chamber, it is characterised in that described anti-
Chamber is answered using the reaction chamber described in claim 1-10 any one.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610318302.2A CN107369604B (en) | 2016-05-12 | 2016-05-12 | Reaction chamber and semiconductor processing equipment |
| TW105129849A TWI641044B (en) | 2016-05-12 | 2016-09-13 | Reaction chamber and semiconductor processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610318302.2A CN107369604B (en) | 2016-05-12 | 2016-05-12 | Reaction chamber and semiconductor processing equipment |
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| CN107369604A true CN107369604A (en) | 2017-11-21 |
| CN107369604B CN107369604B (en) | 2019-10-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610318302.2A Active CN107369604B (en) | 2016-05-12 | 2016-05-12 | Reaction chamber and semiconductor processing equipment |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107369604B (en) |
| TW (1) | TWI641044B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110660635A (en) * | 2018-06-29 | 2020-01-07 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing equipment |
| CN111069192A (en) * | 2018-10-22 | 2020-04-28 | 北京北方华创微电子装备有限公司 | In-situ cleaning device and semiconductor processing equipment |
| CN112376029A (en) * | 2020-11-11 | 2021-02-19 | 北京北方华创微电子装备有限公司 | Plasma immersion ion implantation apparatus |
| CN113533308A (en) * | 2021-06-15 | 2021-10-22 | 杭州谱育科技发展有限公司 | Device and method for detecting elements in radioactive sample |
| CN114121581A (en) * | 2020-08-27 | 2022-03-01 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0520519A1 (en) * | 1991-06-27 | 1992-12-30 | Applied Materials, Inc. | Plasma processing reactor and process for plasma etching |
| CN1284209C (en) * | 2002-02-06 | 2006-11-08 | 松下电器产业株式会社 | Plasma processing method and apparatus |
| US20110133650A1 (en) * | 2009-12-09 | 2011-06-09 | Jehara Corporation | Apparatus for generating plasma |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8911590B2 (en) * | 2006-02-27 | 2014-12-16 | Lam Research Corporation | Integrated capacitive and inductive power sources for a plasma etching chamber |
| US20170213734A9 (en) * | 2007-03-30 | 2017-07-27 | Alexei Marakhtanov | Multifrequency capacitively coupled plasma etch chamber |
| KR102164678B1 (en) * | 2009-08-31 | 2020-10-12 | 램 리써치 코포레이션 | Radio frequency (rf) ground return arrangements |
| JP5808697B2 (en) * | 2012-03-01 | 2015-11-10 | 株式会社日立ハイテクノロジーズ | Dry etching apparatus and dry etching method |
-
2016
- 2016-05-12 CN CN201610318302.2A patent/CN107369604B/en active Active
- 2016-09-13 TW TW105129849A patent/TWI641044B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0520519A1 (en) * | 1991-06-27 | 1992-12-30 | Applied Materials, Inc. | Plasma processing reactor and process for plasma etching |
| CN1284209C (en) * | 2002-02-06 | 2006-11-08 | 松下电器产业株式会社 | Plasma processing method and apparatus |
| US20110133650A1 (en) * | 2009-12-09 | 2011-06-09 | Jehara Corporation | Apparatus for generating plasma |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110660635A (en) * | 2018-06-29 | 2020-01-07 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing equipment |
| CN110660635B (en) * | 2018-06-29 | 2022-08-16 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing equipment |
| CN111069192A (en) * | 2018-10-22 | 2020-04-28 | 北京北方华创微电子装备有限公司 | In-situ cleaning device and semiconductor processing equipment |
| CN114121581A (en) * | 2020-08-27 | 2022-03-01 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus |
| CN114121581B (en) * | 2020-08-27 | 2024-04-05 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus |
| CN112376029A (en) * | 2020-11-11 | 2021-02-19 | 北京北方华创微电子装备有限公司 | Plasma immersion ion implantation apparatus |
| WO2022100538A1 (en) * | 2020-11-11 | 2022-05-19 | 北京北方华创微电子装备有限公司 | Plasma immersion ion implantation apparatus |
| CN113533308A (en) * | 2021-06-15 | 2021-10-22 | 杭州谱育科技发展有限公司 | Device and method for detecting elements in radioactive sample |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI641044B (en) | 2018-11-11 |
| TW201740456A (en) | 2017-11-16 |
| CN107369604B (en) | 2019-10-11 |
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