CN218596493U - Target cathode magnetic steel arrangement structure and magnetron sputtering device adopting same - Google Patents
Target cathode magnetic steel arrangement structure and magnetron sputtering device adopting same Download PDFInfo
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- CN218596493U CN218596493U CN202222804686.2U CN202222804686U CN218596493U CN 218596493 U CN218596493 U CN 218596493U CN 202222804686 U CN202222804686 U CN 202222804686U CN 218596493 U CN218596493 U CN 218596493U
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Abstract
The utility model relates to a target cathode magnet steel arrangement structure and adopt magnetron sputtering device of this structure, target cathode magnet steel arrangement structure, including a magnetism post and a plurality of magnetic ring, the cross section width of magnetism post and the cross section width of magnetic ring equal, and the height of magnetism post and the height of magnetic ring equal, the internal diameter equal difference distribution of a plurality of magnetic rings, magnetism post set up in central point and put, and the magnetic ring uses the magnetism post to arrange outside the magnetism post in proper order by little to big concentric phase sleeve according to the internal diameter as the center. The magnetron sputtering device comprises a vacuum chamber, a vacuum system, a substrate, a polar plate and a power supply, wherein a target cathode magnetic steel arrangement structure is arranged on the upper surface of the polar plate, the power supply comprises a direct current bias power supply, a radio frequency power supply I and a radio frequency power supply II, the direct current bias power supply and the radio frequency power supply I are connected onto the polar plate, an impedance matcher is connected between the radio frequency power supply I and the polar plate, and the radio frequency power supply II is connected onto the substrate. The magnetic steel arrangement structure of the target cathode can improve the utilization rate of the target material and reduce the manufacturing cost of the integrated circuit, and the magnetron sputtering device can improve the quality of the integrated circuit.
Description
Technical Field
The utility model relates to an integrated circuit processing technology field, in particular to magnet steel arrangement structure and magnetron sputtering device.
Background
Magnetron sputtering is a commonly used Physical Vapor Deposition (PVD) method, and has the advantages of low deposition temperature, high deposition speed, good uniformity of deposited films, components close to target components and the like when applied to integrated circuits. The working principle of the traditional sputtering technology is as follows: under the condition of high vacuum, the incident ions bombard the target under the action of an electric field, so that neutral atoms or molecules on the surface of the target obtain enough kinetic energy to be separated from the surface of the target and deposit on the surface of a substrate to form a film. However, electrons are affected by an electric field and a magnetic field to cause drift, which results in low sputtering efficiency, and a short electron bombardment path also causes an increase in substrate temperature. Electrons are bound around the target under the action of Lorentz force and continuously do circular motion, so that more ions are generated to bombard the target, and the sputtering efficiency is greatly improved. However, the magnetic field distribution generated by the magnetic steel structure of the traditional single magnetic ring and magnetic column is still lower in the utilization rate of the target material.
At present, two dual-frequency power supplies with greatly different frequencies are generally adopted in the industry to drive capacitive coupling discharge so as to realize the control of ion flux and energy. The plasma density and ion flux are controlled by the frequency of the high frequency power supply and the incident energy of the ions is controlled by the voltage amplitude of the low frequency power supply. However, due to the coupling effect between the dual-frequency power supplies and the influence of secondary electrons, the variation range of plasma density and flux is very small, so that the application of the plasma density and flux in integrated circuits is also greatly limited.
Disclosure of Invention
The utility model aims at the defect that above-mentioned prior art exists, a target cathode magnet steel arrangement structure and adopt the magnetron sputtering device of this structure is provided, target cathode magnet steel arrangement structure can improve the target utilization ratio, reduce the cost of integrated circuit manufacturing process, magnetron sputtering device can improve the sedimentary speed of film in the integrated circuit manufacturing process, and the cohesiveness of the film that obtains and substrate is better, and photoelectric property is more excellent, and the membrane is thick more even, and the step cover ability is stronger, and compactness is good.
The utility model discloses a realize that the technical scheme that above-mentioned purpose adopted is: a target cathode magnetic steel arrangement structure comprises a magnetic column and a plurality of magnetic rings, wherein the width of the cross section of the magnetic column is equal to that of the cross section of each magnetic ring, the height of the magnetic column is equal to that of each magnetic ring, the inner diameters of the plurality of magnetic rings are distributed in an equal difference mode, the magnetic columns are arranged in the center, the magnetic rings are arranged outside the magnetic columns in sequence in a concentric mode from small to large with the magnetic columns as the centers, the peripheries of the upper ends of the magnetic columns are provided with chamfer cutting rings, the inner sides of the top ends of the outermost magnetic rings are provided with chamfer cutting rings, and the inner sides and the outer sides of the top ends of the rest magnetic rings are provided with chamfer cutting rings.
The utility model discloses a further technical scheme is: the chamfer of magnetic cylinder and magnetic ring is cut the ring and is cut the ring for 45 degrees.
The utility model discloses a further technical scheme is: the magnetic poles of the magnetic columns are opposite to the magnetic poles of the adjacent magnetic rings, and the magnetic poles of the adjacent magnetic rings are also opposite.
The utility model discloses a further technical scheme is: the number of the magnetic rings is three.
The utility model discloses a realize that another technical scheme that above-mentioned purpose adopted is: the utility model provides an adopt above-mentioned target cathode magnet steel arrangement structure's magnetron sputtering device, includes vacuum chamber, vacuum system, substrate, polar plate, power, substrate and polar plate setting are in the vacuum chamber, and vacuum chamber and substrate electric ground connection respectively, target cathode magnet steel arrangement structure sets up on the polar plate upper surface, the power includes direct current bias power supply, radio frequency power supply I, radio frequency power supply II, and direct current bias power supply and radio frequency power supply I connect on the polar plate, still are connected with the impedance matcher between radio frequency power supply I and the polar plate, and radio frequency power supply II connects on the substrate.
The utility model discloses a further technical scheme is: the radio frequency power supply I is a 13.56MHz radio frequency power supply, and the radio frequency power supply II is a 27.12MHz radio frequency power supply.
The utility model discloses a further technical scheme is: the impedance matcher is also connected with a computer.
The utility model relates to a target cathode magnet steel arrangement structure and adopt magnetron sputtering device of this structure has following beneficial effect: the magnetic steel arrangement structure of the target cathode adopts a magnetic steel arrangement structure of a plurality of magnetic rings and magnetic columns, so that the orthogonal area of an electric field and a magnetic field is enlarged, the area of a generated main plasma is enlarged, the utilization rate of a target material is obviously improved, and the number and the inner diameter of the magnetic rings can be increased or decreased according to the size of a reaction chamber; the magnetron sputtering device controls the density and the ion flux of plasma through the frequency of a high-frequency power supply, and controls the incident energy of ions through the voltage amplitude of a low-frequency power supply; after the direct current power supply is applied, the generated high-energy secondary electrons can obviously improve the plasma density and the deposition rate. Compared with the prior art, the method can improve the film deposition rate in the integrated circuit manufacturing process, and the obtained film has better cohesiveness with the substrate, better photoelectric property, more uniform film thickness, stronger step coverage capability and good compactness.
The following describes a target cathode magnetic steel arrangement structure and a magnetron sputtering apparatus using the same with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a front sectional view of a target cathode magnetic steel arrangement structure of the present invention;
fig. 2 is a top view of a target cathode magnetic steel arrangement structure of the present invention;
FIG. 3 shows a magnetron sputtering apparatus with a target cathode magnetic steel arrangement structure;
the reference numbers illustrate: 1-a magnetic column; 2-a magnetic ring; 3-a vacuum chamber; 4-a substrate; 5-a target material; 6-copper back plane; 7-pole plate; 8-air outlet; 9-impedance matcher; 10-a computer; 11-radio frequency power supply I; 12-an air inlet; 13-a dc bias supply; 14-radio frequency power supply II, 15-chamfer and cut ring.
Detailed Description
As shown in fig. 1 and fig. 2, the present invention relates to a target cathode magnetic steel arrangement structure, which includes a magnetic column 1 and a plurality of magnetic rings 2. The main body of the magnetic column 1 is cylindrical, the magnetic ring 2 is a ring with an inner hole, and in the embodiment, three magnetic rings 2 are arranged. The cross section width of the magnetic column 1 is equal to the cross section width of the magnetic ring 2, the cross section width of the magnetic column 1 is the diameter of the magnetic column 1, the cross section width of the magnetic ring 2 is the thickness of the magnetic ring 2, the height of the magnetic column 1 is equal to the height of the magnetic ring 2, the inner diameters of the magnetic rings 2 are distributed in an equal difference mode, the magnetic column 1 is arranged at the center, the magnetic rings 2 are sleeved outside the magnetic column 1 in sequence from small to large concentrically by taking the magnetic column 1 as the center, namely the magnetic column 1 is arranged at the center, and the magnetic rings 2 surround the magnetic column 1 in sequence according to the inner diameter, as shown in figure 2. The periphery of the upper end of the magnetic column 1 is provided with a chamfer cutting ring 15, namely, the chamfer cutting ring 15 is formed at the upper end of the magnetic column 1 by cutting, and the chamfer cutting ring 15 is a chamfer cutting ring with an angle of 45 degrees, namely, the included angle between the chamfer cutting ring 15 and the horizontal plane is 45 degrees. The inner side of the top end of the outermost side magnetic ring 2 is provided with a chamfer cutting ring 15, and the outer side of the top end of the outermost side magnetic ring 2 is not provided with a chamfer cutting ring. The inner side and the outer side of the top ends of the rest magnetic rings 2 are provided with chamfer cutting rings 15. The chamfer cutting ring 15 of the magnetic ring 2 is also a chamfer cutting ring of 45 degrees. The magnetic poles of the magnetic columns 1 are opposite to the magnetic poles of the adjacent magnetic rings 2, and the magnetic poles of the adjacent magnetic rings 2 are also opposite. In this embodiment, the magnetic pole of the magnetic column 1 is an N pole, the magnetic pole of the adjacent second magnetic ring 2 is an S pole, the second magnetic ring 2 is an N pole, and the third magnetic ring 2 is an S pole. When in use, the target cathode magnetic steel arrangement structure is arranged on the upper surface of the polar plate 7. The number and the inner diameter of the magnetic rings 2 can be increased or decreased according to the size of the vacuum chamber 3 for reaction.
The utility model discloses an above-mentioned target cathode magnet steel arrangement structure's magnetron sputtering device, including vacuum chamber 3, vacuum system, substrate 4, polar plate 7, power. The vacuum chamber 3 is provided with a gas inlet 12 and a gas outlet 8, wherein the vacuum chamber 3 and the vacuum system are of conventional design and will not be described in detail here. The substrate 4 and the plate 7 are disposed in the vacuum chamber 3, and the vacuum chamber 3 and the substrate 4 are electrically grounded, respectively. The target cathode magnetic steel arrangement structure is arranged on the upper surface of the polar plate 7. The power supply comprises a direct current bias power supply 13, a radio frequency power supply I11 and a radio frequency power supply II 14. The direct current bias power supply 13 and the radio frequency power supply I11 are connected to the polar plate 7, the impedance matcher 9 is connected between the radio frequency power supply I11 and the polar plate 7, and the radio frequency power supply II 14 is connected to the substrate 4. In this embodiment, the radio frequency power supply i 11 is a 13.56MHz radio frequency power supply, the radio frequency power supply ii 14 is a 27.12MHz radio frequency power supply, and the impedance matcher 9 is further connected to the computer 10.
When the magnetron sputtering device is wired, a direct current bias power supply 13 and a 13.56MHz radio frequency power supply I11 are connected on the polar plate 7, and a 27.12MHz radio frequency power supply II 14 is connected on the substrate 4. The radio frequency power supply I11 and the radio frequency power supply II 14 can select the frequency to be 2 according to the actual process requirement
60MHz range power supply, the power regulation range of the power supply is preferably 300W
2000W. The voltage regulation range of the dc bias power supply 13 is preferably 20V to 120V, and may be reasonably selected according to the process requirements. The vacuum system 8 adopts a 6L/S direct-coupled rotary vane pump and a 620L/S composite molecular pump to form a vacuum unit, and the ultimate vacuum of the vacuum system is superior to 5 multiplied by 10 -5 Pa, the gas inlet 12 can be filled with atmosphere gases such as Ar, O2, N2 and the like according to the process requirements.
Wiping the target 5 with anhydrous alcohol before coating, mounting on copper back plate 6 with corresponding size at the lower part of vacuum chamber 3, cooling with circulating cold water during sputtering, and electrically grounding vacuum chamber 3 and substrate 4. In the experimental process, a mechanical pump is started to pump the vacuum degree to be less than 10 Pa, then a molecular pump is started to pump the vacuum chamber to 10 -3 And introducing atmosphere below Pa, starting a radio frequency power supply I11 after the air pressure is stable, controlling an impedance matcher 9 through a computer 10, starting a radio frequency power supply II 14 and a direct current bias power supply 13 after the plasma in the vacuum chamber 3 is excited and started, and adjusting the impedance matcher 9 to enable the reflected power to be zero.
The above embodiments show and describe the basic principles and main features of the present invention and the advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments, and the above embodiments and descriptions are only illustrative of the principles of the present invention, and that there may be many more variations and modifications without departing from the spirit and scope of the present invention, and that these variations and modifications fall within the scope of the claimed invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (7)
1. The utility model provides a target cathode magnet steel arrangement structure, its characterized in that includes a magnetic pillar (1) and a plurality of magnetic ring (2), the cross section width of magnetic pillar (1) and the cross section width of magnetic ring (2) are equal, and the height of magnetic pillar (1) equals the height of magnetic ring (2), and the internal diameter of a plurality of magnetic ring (2) is the equidifferent distribution, magnetic pillar (1) sets up in the central point and puts, and magnetic ring (2) are used magnetic pillar (1) as the center and are arranged outside magnetic pillar (1) according to the internal diameter from little to big concentric phase, and magnetic pillar (1) upper end periphery is equipped with chamfer and cuts ring (15), and the inboard chamfer of outside magnetic ring (2) top is equipped with chamfer and cuts ring (15), and the inboard in all sides in all the other magnetic ring (2) top is equipped with chamfer and cuts ring (15).
2. A target cathode magnetic steel arrangement structure according to claim 1, characterized in that the chamfered cutting rings (15) of the magnetic pillar (1) and the magnetic ring (2) are both 45 degree chamfered cutting rings.
3. A target cathode magnetic steel arrangement as claimed in claim 1, wherein the poles of the magnetic columns (1) are opposite to the poles of their adjacent magnetic rings (2), and the poles of the adjacent magnetic rings (2) are also opposite.
4. A target cathode magnetic steel arrangement as claimed in claim 1, characterized in that the number of magnetic rings (2) is three.
5. A magnetron sputtering device adopting the target cathode magnetic steel arrangement structure of any one of claims 1 to 4, which comprises a vacuum chamber (3), a vacuum system, a substrate (4), a polar plate (7) and a power supply, wherein the substrate (4) and the polar plate (7) are arranged in the vacuum chamber (3), the vacuum chamber (3) and the substrate (4) are respectively electrically grounded, the magnetron sputtering device is characterized in that the target cathode magnetic steel arrangement structure is arranged on the upper surface of the polar plate (7), the power supply comprises a direct current bias power supply (13), a radio frequency power supply I (11) and a radio frequency power supply II (14), the direct current bias power supply (13) and the radio frequency power supply I (11) are connected to the polar plate (7), an impedance matcher (9) is further connected between the radio frequency power supply I (11) and the polar plate (7), and the radio frequency power supply II (14) is connected to the substrate (4).
6. The magnetron sputtering apparatus as claimed in claim 5, wherein said radio frequency power supply I (11) is a 13.56MHz radio frequency power supply and said radio frequency power supply II (14) is a 27.12MHz radio frequency power supply.
7. Magnetron sputtering device according to claim 5, characterized in that the impedance matcher (9) is further connected to a computer (10).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222804686.2U CN218596493U (en) | 2022-10-24 | 2022-10-24 | Target cathode magnetic steel arrangement structure and magnetron sputtering device adopting same |
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| CN202222804686.2U CN218596493U (en) | 2022-10-24 | 2022-10-24 | Target cathode magnetic steel arrangement structure and magnetron sputtering device adopting same |
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| CN218596493U true CN218596493U (en) | 2023-03-10 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116590681A (en) * | 2023-06-16 | 2023-08-15 | 中科纳微真空科技(合肥)有限公司 | Radio frequency plane cathode |
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2022
- 2022-10-24 CN CN202222804686.2U patent/CN218596493U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116590681A (en) * | 2023-06-16 | 2023-08-15 | 中科纳微真空科技(合肥)有限公司 | Radio frequency plane cathode |
| CN116590681B (en) * | 2023-06-16 | 2023-10-31 | 中科纳微真空科技(合肥)有限公司 | Radio frequency plane cathode |
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