CN105132889B - Applied to double gas circuit air feeding in center structures in film deposition apparatus spray head - Google Patents
Applied to double gas circuit air feeding in center structures in film deposition apparatus spray head Download PDFInfo
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- CN105132889B CN105132889B CN201510582457.2A CN201510582457A CN105132889B CN 105132889 B CN105132889 B CN 105132889B CN 201510582457 A CN201510582457 A CN 201510582457A CN 105132889 B CN105132889 B CN 105132889B
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Abstract
The invention belongs to semiconductive thin film deposition applications and manufacturing technology field, more particularly to a kind of double gas circuit air feeding in center structures being applied in film deposition apparatus spray head, the air inlet gas circuit of the air intake structure includes gas A air inlets gas circuit and gas B air inlet gas circuits, two gas circuits are spray head central air induction, and two air inlet gas circuit is separate, solving gas with various, mixing makes film be grown in inside spray head in spray head in advance, the problem of causing shower plate air-hole blockage or aperture to change, and two kinds of gas circuits are from from spray head central air induction, solve the problems, such as to cause the uneven film thickness of deposition even from edge air inlet, two kinds of gases can equably reach substrate surface and carry out deposition reaction.
Description
Technical field
The invention belongs to semiconductive thin film deposition applications and manufacturing technology field, and in particular to one kind is applied to thin film deposition
Double gas circuit air feeding in center structures in device spray head.
Background technology
Semiconductor coated film equipment is when carrying out deposition reaction, it is sometimes desirable to which two kinds of gases carry out film into chamber simultaneously and sunk
Product, and requires that gas path is separate, can not be met before reaction cavity is entered, into chamber after each gas can uniformly expand
It is scattered to substrate surface.Existing spraying method and air intake structure design greatly both for single gas path, such air inlet
Structure is can not to meet the requirement of two kinds of gas transport path independence, often reacting gas is met inside shower plate, and
Thin film deposition is carried out, so wastes the special gas resources of preciousness, it is also possible to because next of the string of deposits of shower plate internal membrane
The problem of granularity.The film of some deposition reactions is can not to perform etching or clean by modes such as remote plasmas online
, if such film is grown in the inside of shower plate, it will make deposition reaction can not the air-hole blockage of shower plate gradually
Continue, even it is no it is completely plugged in the case of because having the growth of film in shower plate outlet so that stomata goes out
Mouth bore changes, and then the pressure of outlet and flow velocity is produced uncertain change, and these uncertainties make answering for depositing operation
System becomes difficult and uncontrollable.
Because more gas list gas circuits have significant limitation, also there is equipment component now using double gas circuits or more gas
The air intake structure on road.Such structure is often gas all the way is entered at the center of equipment, and gas road in addition is entered from edge
Enter shower plate, the mode of this edge air inlet can largely influence the uniformity of film, easily cause air inlet side into
Film is thicker, and away from the relatively thin film forming non-uniform phenomenon of air inlet side film forming, What is more may occur only close to gas access
Position just have a gas ejection, and spray, produce only in the pole of subregion deposition film without gas away from gas vent side
Effect is held, these all do not meet technological requirement.And it is desirable that the deposition of film is uniform in whole diametric(al),
It is concentric circles distribution that even if with the presence of uneven trend, we, which also are intended to its regularity of distribution, therefore urgently invents a kind of gas circuit
Structure, make gas with various simultaneously, it is independent, uniformly enter reaction chamber, make the film thickness of deposition uniform.
The content of the invention
The technical problem to be solved in the present invention is to provide in a kind of double gas circuits being applied in film deposition apparatus spray head
Heart air intake structure, two kinds of gas circuits are made all to keep independent into reaction chamber from spray head is entered, two kinds of gases are entering reaction
It will not be mixed before chamber, solving gas with various and being mixed in spray head makes film be grown in inside spray head, causes shower plate
The problem of air-hole blockage or aperture change, and two kinds of gas circuits solve the air inlet from edge and caused from from spray head central air induction
The problem of uneven film thickness of deposition is even.
The present invention, which is achieved in that, provides a kind of double gas circuit air feeding in center being applied in film deposition apparatus spray head
Structure, the air inlet gas circuit of air intake structure include gas A air inlets gas circuit and gas B air inlet gas circuits, gas A air inlets gas circuit and gas B
Air inlet gas circuit is spray head central air induction, and two air inlet gas circuits are separate.
Further, gas A enters the center air cavity of spray head via the gas A air admission holes on the distributing ring of outer ring, then leads to
The stomata crossed on the face of central gas bottom of chamber enters baffle space and spread, and moving downwardly to upper strata by the stomata on baffle plate sprays
The space that plate surrounds with baffle plate, spray upper plate, reaction chamber finally is entered from the gas A outlets of upper strata shower plate, forms gas
Body A air inlet gas circuits.
Further, gas B enters outer ring distributing ring via the gas B air inlets of outer ring distributing ring bottom and matched somebody with somebody with inner ring
In the distribution circuit structure that compression ring is formed, then upper strata shower plate entered via with gas column by the air distribution hole of circuit structure floor
The space surrounded with lower floor shower plate and diffusion, reaction chamber finally is entered from the gas B outlets of lower floor's shower plate, forms gas
Body B air inlet gas circuits.
Further, component is heated or cooled in installation on the spray upper plate of spray head, suitable for being provided to technical process
Suitable temperature.
Further, heater is electric heater or hot fluid heats device, and cooling component is cold fluid cooler.
Further, distribution circuit structure is by being welded again after being machined respectively to outer ring distributing ring and inner ring distributing ring
Connect, monoblock cast or 3D printing are made.
Compared with prior art, it is an advantage of the current invention that by making two kinds of gas circuits be reacted from entrance spray head to entrance
Chamber all keeps independent, and two kinds of gases will not mix before reaction chamber is entered, and solve gas with various and mixed in spray head
Film is set to be grown in inside spray head, the problem of causing shower plate air-hole blockage or aperture to change, and two kinds of gas circuits are from from spray
Head central air induction is drenched, solves the problems, such as to cause the uneven film thickness of deposition even from edge air inlet, enables two kinds of gases equal
Substrate surface is reached evenly carries out deposition reaction.
Brief description of the drawings
Below in conjunction with the accompanying drawings and embodiment the present invention is further detailed explanation：
Fig. 1 is the showerhead configuration schematic diagram of the double gas circuit air feeding in center structures of the application present invention；
Fig. 2 is outer ring distributing ring structural representation in the present invention；
Fig. 3 is inner ring distributing ring structural representation in the present invention.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to embodiment, to the present invention
It is further elaborated.It should be appreciated that specific embodiment described herein is used only for explaining the present invention, it is not used to
Limit the present invention.
The invention provides a kind of double gas circuit air feeding in center structures being applied in film deposition apparatus spray head, such as Fig. 1
Shown, for the spray head of the double gas circuit air feeding in center structures of application, the air intake structure includes gas A air inlets gas circuit and gas B enters
Gas gas circuit, gas A air inlets gas circuit include gas A air inlets 1, center air cavity 2, baffle space 3, upper strata shower plate 41 and baffle plate,
The space 4 and the gas A outlets 5 of upper strata shower plate that spray upper plate 7 surrounds, the gas A air inlets 1 are arranged on outer ring distributing ring
6 top, the structure of outer ring distributing ring 6 as shown in Fig. 2 gas A enters center air cavity 2 via gas A air inlets 1, then by
Stomata on the bottom surface of center air cavity 2 is entered in baffle space 3 and spread, and baffle space 3 is by spray upper plate 7, edge guard
31 and center baffle 32 surround, gas A diffuses to upper strata shower plate 41 and baffle plate, spray from stomata on the bottom surface of baffle space 3
The space 4 that plate 7 surrounds is spooned, is finally entered from the gas A outlets 5 of upper strata shower plate 41 in reaction chamber, is formed gas A and enter
Gas gas circuit；
Gas B air inlets gas circuit includes gas B air inlets 8, distribution circuit structure 9, upper strata shower plate 41 and lower floor's shower plate
101 spaces 10 surrounded and gas B outlets 11, the gas B imports are arranged on the bottom of outer ring distributing ring 6, distribution circuit knot
Structure 9 is surrounded by outer ring distributing ring 6 and inner ring distributing ring 12, and the structure of inner ring distributing ring is as shown in figure 3, in distribution circuit knot
The bottom surface of structure 9 is provided with air distribution hole 91, and gas column 92 is matched somebody with somebody in the connection of air distribution hole 91, and gas B enters via the gas B of the bottom of outer ring distributing ring 6
Gas port 8 is entered in distribution circuit structure 9, then is entered by the air distribution hole 91 of the bottom surface of distribution circuit structure 9 via with gas column 92
The space 10 that is surrounded to upper strata shower plate 41 with lower floor shower plate 101 is simultaneously spread, and is finally gone out from the gas B of lower floor's shower plate 101
Mouth 11 enters reaction chamber, forms gas B air inlet gas circuits.
From the central air induction of spray head, two gas circuits are separate for gas A air inlets gas circuit and gas B air inlets gas circuit,
Do not met in spray head, therefore gas A and gas B just meets until reaching reaction chamber, will not make thin film deposition in spray head
Inside, the air-hole blockage of shower plate or the varying aperture of stomata are caused, causes thin film deposition in uneven thickness.
Component is heated or cooled, it is necessary to be installed on the spray upper plate of spray head in order to coordinate different technological requirements, uses
To provide suitable temperature to technical process, the preferred electric heater of heater or hot fluid heats device, cooling component are preferably
Cold fluid cooler.
Distribution circuit structure is interior die cavity, directly can not be realized by way of machining, it is necessary to outer ring distributing ring
Welded again after being machined respectively with inner ring distributing ring, monoblock cast or 3D printing are made.
Double gas circuit air intake structure spray heads of the present invention, which are suitable for any two kinds, can coordinate progress thin film deposition anti-together
The gas answered, following table presents gas A and gas B citing, but it is not limited to following gas (the form left side is gas
A, the right are gas B).
| Trimethylamine | Ozone |
| Trimethylamine | Vapor |
| Dual-tert-butyl amino silane | Ozone |
| Dual-tert-butyl amino silane | Oxygen |
| Dual-tert-butyl amino silane | Ammonia |
Thin film deposition reaction is carried out by the combination to above-mentioned gas A and gas B, and to thin film center and the thickness at edge
Carry out test comparison, the results showed that, the film integral thickness of double gas circuit air intake structure spray head depositions provided by the invention is homogeneous,
Meet process requirements.
Claims (4)
1. applied to double gas circuit air feeding in center structures in film deposition apparatus spray head, it is characterised in that the air intake structure
Air inlet gas circuit include gas A air inlets gas circuit and gas B air inlet gas circuits, the gas A air inlets gas circuit and gas B air inlet gas circuits are equal
For spray head central air induction, and two air inlet gas circuits are separate；
The gas A enters the center air cavity of the spray head via the gas A air admission holes on the distributing ring of outer ring, then by described
Stomata on the face of central gas bottom of chamber enters baffle space and spread, and upper strata shower plate is moved downwardly to by the stomata on baffle plate
The space surrounded with baffle plate, spray upper plate, reaction chamber finally is entered from the gas A outlets of the upper strata shower plate, is formed
Gas A air inlet gas circuits；
The gas B enters outer ring distributing ring via the gas B air inlets of outer ring distributing ring bottom and formed with inner ring distributing ring
Distribution circuit structure in, then upper strata shower plate entered with via with gas column by the air distribution hole of the circuit structure floor
The space that surrounds of layer shower plate and diffusion, reaction chamber finally is entered from the gas B outlets of lower floor's shower plate, forms gas
Body B air inlet gas circuits.
2. the double gas circuit air feeding in center structures according to claim 1 being applied in film deposition apparatus spray head, it is special
Sign is, is installed on the spray upper plate of the spray head and component is heated or cooled, for providing suitable temperature to technical process
Degree.
3. the double gas circuit air feeding in center structures according to claim 2 being applied in film deposition apparatus spray head, it is special
Sign is that the heater is electric heater or hot fluid heats device, and the cooling component is cold fluid cooler.
4. the double gas circuit air feeding in center structures according to claim 1 being applied in film deposition apparatus spray head, it is special
Sign is that the distribution circuit structure by welding again after being machined respectively to outer ring distributing ring and inner ring distributing ring, entirety
Casting or 3D printing are made.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510582457.2A CN105132889B (en) | 2015-09-14 | 2015-09-14 | Applied to double gas circuit air feeding in center structures in film deposition apparatus spray head |
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| CN201510582457.2A CN105132889B (en) | 2015-09-14 | 2015-09-14 | Applied to double gas circuit air feeding in center structures in film deposition apparatus spray head |
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| CN105132889A CN105132889A (en) | 2015-12-09 |
| CN105132889B true CN105132889B (en) | 2017-11-21 |
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702350B (en) * | 2015-11-13 | 2019-05-31 | 北京北方华创微电子装备有限公司 | Air intake assembly and reaction chamber |
| CN108520852B (en) * | 2018-06-04 | 2023-06-27 | 长鑫存储技术有限公司 | System and method for monitoring abnormality of spray head in plasma etching |
| CN109306470A (en) * | 2018-09-29 | 2019-02-05 | 北京北方华创微电子装备有限公司 | Inlet duct and apparatus for atomic layer deposition for atom layer deposition process |
| TWI733196B (en) * | 2018-09-29 | 2021-07-11 | 大陸商北京北方華創微電子裝備有限公司 | Air intake device and atomic layer deposition equipment for atomic layer deposition process |
| CN112713074B (en) * | 2019-10-25 | 2023-03-07 | 中微半导体设备(上海)股份有限公司 | Gas shower head assembly and plasma processing equipment |
| CN113804046B (en) * | 2020-06-15 | 2023-10-13 | 拓荆科技股份有限公司 | Low-cost initiative accuse Wen Penlin head |
| CN115058702A (en) * | 2022-07-27 | 2022-09-16 | 拓荆科技(上海)有限公司 | Spray header and vacuum treatment equipment |
| CN115584484A (en) * | 2022-09-01 | 2023-01-10 | 拓荆科技股份有限公司 | Cleaning gas double-pipeline conveying module and thin film deposition equipment |
| CN115505904B (en) * | 2022-10-27 | 2023-11-24 | 拓荆科技股份有限公司 | Spray set of many air current passageway |
| CN115652288B (en) * | 2022-12-28 | 2023-04-14 | 拓荆科技(上海)有限公司 | Spray plate of semiconductor process equipment and semiconductor process equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203559126U (en) * | 2013-10-31 | 2014-04-23 | 沈阳拓荆科技有限公司 | Four-region multiple-gas-independent-channel spray structure |
| CN203559125U (en) * | 2013-10-31 | 2014-04-23 | 沈阳拓荆科技有限公司 | Spraying structure of vortex-shaped line-type multi-gas independent channel |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5192214B2 (en) * | 2007-11-02 | 2013-05-08 | 東京エレクトロン株式会社 | Gas supply apparatus, substrate processing apparatus, and substrate processing method |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203559126U (en) * | 2013-10-31 | 2014-04-23 | 沈阳拓荆科技有限公司 | Four-region multiple-gas-independent-channel spray structure |
| CN203559125U (en) * | 2013-10-31 | 2014-04-23 | 沈阳拓荆科技有限公司 | Spraying structure of vortex-shaped line-type multi-gas independent channel |
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Address after: No.900 Shuijia, Hunnan District, Shenyang City, Liaoning Province Patentee after: Tuojing Technology Co.,Ltd. Address before: 110179 3rd floor, No.1-1 Xinyuan street, Hunnan New District, Shenyang City, Liaoning Province Patentee before: PIOTECH Co.,Ltd. |