CN109518164A - Atomic layer deposition apparatus and method - Google Patents
Atomic layer deposition apparatus and method Download PDFInfo
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- CN109518164A CN109518164A CN201811562115.4A CN201811562115A CN109518164A CN 109518164 A CN109518164 A CN 109518164A CN 201811562115 A CN201811562115 A CN 201811562115A CN 109518164 A CN109518164 A CN 109518164A
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- pipeline
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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Abstract
This application discloses a kind of atomic layer deposition apparatus and methods.The atomic layer deposition apparatus includes: reaction chamber, it is connected with the first pipeline, the second pipeline and third pipeline, the first presoma, the first purge gas and the second presoma are passed through via first pipeline, second pipeline and the third pipeline respectively, wherein, it include the first valve on first pipeline, first valve adjacent to first pipeline and the reaction chamber link position, thus control the first presoma supply.The atomic layer deposition apparatus is passed through the first presoma to reaction chamber using the first pipeline, purge gas is passed through to reaction chamber using the second pipeline, and the first valve is provided in the position that the first pipeline closes on reaction chamber, to which first forerunner's physical efficiency is continuously present in the first pipeline, the continuity of reaction ensure that.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, in particular to a kind of atomic layer deposition apparatus and method.
Background technique
With the development of integrated circuit technique, the characteristic size of device is gradually reduced, and is proposed to the quality of deposition film
Higher requirement, especially in three-dimensional device structures, such as fin formula field effect transistor (Fin Field-Effect
Transistor, FinFET), the dual imaging technique of autoregistration (Self to aligned to double to patterning, SADP)
And three-dimensional flash memory (3D NAND) structure, it is required in stereochemical structure side wall deposition film, therefore the step coverage of film is mentioned
Higher requirement is gone out.Traditional film preparing technology, such as physical gas phase deposition technology (PVD, Physical Vapor
Deposition), chemical vapour deposition technique (CVD, Chemical Vapor Deposition) etc. is unable to satisfy it and wants
It asks.Using atomic layer deposition (Atomic Layer Deposition, ALD) technology preparation film have thickness controllable precise,
The advantages that excellent in uniformity, excellent step coverage, very well satisfy the requirement of integrated circuit technique development.Therefore, former
Sublayer deposition technique gradually replaces traditional film preparing technology, becomes industry mainstream.
Technique for atomic layer deposition is that two or more precursors with impulse form are alternately passed through chamber by one kind,
Between purged with purge gas, to avoid the film plating process to meet between differential responses presoma in chamber.In the mistake of atomic layer deposition
Cheng Zhong provides presoma and purge gas to reaction chamber using same pipeline.In scavenging pipeline and chamber, made using carrier gas
For purge gas, scavenging pipeline and chamber, the presoma in pipeline are purged together.Is being passed through to reaction chamber again
When one presoma, presoma needs to be passed through reaction chamber again from the container equipped with precursor source, and reaction cannot be carried out continuously,
Process efficiency is reduced, and causes the waste of raw material.
Therefore, it needs that existing design is further improved, to improve the continuity of reaction.
Summary of the invention
In view of the above problems, the purpose of the present invention is to provide a kind of atomic layer deposition apparatus and methods, wherein using the
One pipeline is passed through the first presoma to reaction chamber, is passed through purge gas to reaction chamber using the second pipeline, and in the first pipe
The position that reaction chamber is closed on road is provided with the first valve and ensure that so that first forerunner's physical efficiency is continuously present in the first pipeline
The continuity of reaction.
According to an aspect of the present invention, a kind of atomic layer deposition apparatus is provided characterized by comprising reaction chamber, with
First pipeline, the second pipeline are connected with third pipeline, respectively via first pipeline, second pipeline and the third
Pipeline is passed through the first presoma, the first purge gas and the second presoma, wherein and it include the first valve on first pipeline,
First valve adjacent to first pipeline and the reaction chamber link position, thus control the first presoma supply.
Preferably, first pipeline and second piping connection obtain described respectively to the first public supply side
The carrier gas of first presoma and first purge gas.
Preferably, further includes: the 4th pipeline is connected with the reaction chamber, for providing the to the reaction chamber
Two purge gas.
Preferably, further includes: container comprising first presoma and has arrival end and outlet end；Second valve and
Third valve, the arrival end of the container and the outlet end are connected to institute via second valve and the third valve respectively
State the first pipeline；And the 4th valve, on second pipeline and neighbouring second pipeline and the reaction chamber
Link position, wherein when being passed through first presoma, first valve, the second valve and third valve are opened, the 4th valve
Shutdown, when being passed through first purge gas, the shutdown of at least one of first valve, the second valve and third valve is described
4th valve is opened.
Preferably, further includes: vacuum pump, via the 5th piping connection to the second supply side of second presoma,
In, when being passed through second presoma, second presoma via second Pipeline transport into the reaction chamber,
When being passed through first presoma and purge gas, second presoma is via the 5th Pipeline transport to the vacuum
Pump.
According to another aspect of the present invention, a kind of Atomic layer deposition method is provided, which is characterized in that including what is repeated
Following steps: S1, the first presoma that carrier gas carrying is passed through into reaction chamber；First is passed through in S2, Xiang Suoshu reaction chamber
Purge gas purges the reaction chamber；The second presoma is passed through in S3, Xiang Suoshu reaction chamber, before described second
It drives the first forerunner precursor reactant adsorbed on body and substrate and generates film；And first is passed through in S4, Xiang Suoshu reaction chamber
Purge gas purges the reaction chamber, wherein in step S2, S3 and S4, first presoma is closed in
In one pipeline.
Preferably, further includes: at least in step S2 and S4, be passed through the second purge gas in the reaction chamber with auxiliary
Help purging.
Preferably, the volume flow of second purge gas is greater than the volume flow of first purge gas.
Preferably, the carrier gas and first purge gas are provided to institute via public supply side and different pipelines
It states in reaction chamber.
Preferably, in step sl, it controls after the carrier gas flows through the container comprising first presoma and enters institute
It states in reaction chamber, and controls second precursor flows to vacuum pump.
Preferably, in step s3, it controls second presoma to enter in the reaction chamber, and stops providing institute
State carrier gas.
Preferably, it in step S2 and S4, controls second precursor flows to vacuum pump, and stopping and the load is provided
Gas.
Atomic layer deposition apparatus provided by the invention and method, when not needing to be passed through the first presoma to reaction chamber,
First presoma is closed in the first pipeline；When needing to be passed through the first presoma to reaction chamber, the first forerunner is carried
The carrier gas of body can directly be entered by the first valve.The time that the first presoma pulse enters reaction chamber is shortened, ensure that anti-
Production capacity can be improved in the continuity of Ying Yuan, while reducing the consumption of the first presoma, improves the utilization of the first presoma
Rate has saved cost.
Further, anti-by the second pipeline purging using the first purge gas in the atomic layer deposition apparatus and method
Answer chamber, the first presoma to be purged is present in the first valve to reaction chamber, shorten the pipeline of the first presoma to be purged away from
From, it avoids purging incomplete problem, reduces the particle level of film, improve film quality, and reduce purge time,
Improve production capacity.Further, the first presoma and the first purge gas are provided to reaction chamber using different pipelines, logical
When entering the first purge gas, it is not necessary to which the size for considering the saturated vapour pressure of the first presoma is passed through the first purging of larger flow
Gas purges reaction chamber, advantageously reduces the particle level of film.
Further, in the atomic layer deposition apparatus and method, the first pipeline and the second piping connection to public confession
To end, and it is further connected to same gas source, provides carrier gas and the first purge gas to the first pipeline and the second pipeline respectively.?
In technical process, gas source is constantly in open state, and has obtained effective utilization always, avoids because gas source is opened and is closed
Air-flow is unstable caused by closing, and avoids gas source and be directly discharged into waste caused by vacuum pump.
Further, in the atomic layer deposition apparatus and method, the second purge gas is blown by the 4th pipeline with first
Scavenging body converges close to one end of reaction chamber, carries out jointly to being present in the first presoma of first valve into reaction chamber
Purging, increases the gas flow of purge gas, avoids purging incomplete problem, further decrease the particle level of film,
Improve film quality.
Detailed description of the invention
By referring to the drawings to the description of the embodiment of the present invention, above-mentioned and other purposes of the invention, feature and
Advantage will be apparent from, in the accompanying drawings:
Fig. 1 shows the flow chart of Atomic layer deposition method according to prior art.
Fig. 2 shows the schematic diagrames of the atomic layer deposition apparatus of the prior art.
Fig. 3 shows titanium tetrachloride (TiCl4) saturated vapor pressure curve figure.
Fig. 4 shows the schematic diagram of atomic layer deposition apparatus according to an embodiment of the present invention.
Fig. 5 shows the flow chart of Atomic layer deposition method according to an embodiment of the present invention.
Fig. 6 a and 6b respectively illustrate distribution of particles situation signal of the substrate before and after deposition film according to prior art
Figure.
Fig. 7 a and 7b respectively illustrate distribution of particles situation of the substrate according to an embodiment of the present invention before and after deposition film
Schematic diagram.
Reference signs list
100 atomic layer deposition apparatus
110 reaction chambers
111 spray heads
112 pedestals
113 substrates
114 butterfly valves
115 vacuum pumps
120 first flowmeters
121 second flowmeters
131 first pipelines
132 second pipelines
133 third pipelines
134 the 4th pipelines
141 first valves
142 second valves
143 third valves
144 the 4th valves
145 the 5th valves
150 containers
151 second presomas
152 carrier gas
200 atomic layer deposition apparatus
210 reaction chambers
211 spray heads
212 pedestals
213 substrates
214 butterfly valves
215 vacuum pumps
220 first flowmeters
221 second flowmeters
222 third flowmeters
231 first pipelines
232 second pipelines
233 third pipelines
234 the 4th pipelines
235 the 5th pipelines
236 the 6th pipelines
241 first valves
242 second valves
243 third valves
244 the 4th valves
245 the 5th valves
246 the 6th valves
247 the 7th valves
248 the 8th valves
250 containers
251 first gas sources
252 second gas sources
253 third gas sources
Specific embodiment
The various embodiments that the present invention will be described in more detail that hereinafter reference will be made to the drawings.In various figures, identical element
It is indicated using same or similar appended drawing reference.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.
With reference to the accompanying drawings and examples, specific embodiments of the present invention will be described in further detail.
Fig. 1 shows the flow chart of Atomic layer deposition method according to prior art.
As shown in Figure 1, in step s101, relative growth parameter is arranged, for example, the temperature of setting atomic layer deposition, gas
Body flow and film thickness.In step s 102, the first presoma is passed through reaction chamber, and the first presoma is made sufficiently to be adsorbed on base
On piece.For example, heating container, makes non-gaseous first presoma be converted into the first presoma of gas phase, gas phase the is carried using carrier gas
One presoma is passed through reaction chamber, and being passed through the time is, for example, 5 milliseconds to 30 seconds, and carrier gas is, for example, high pure nitrogen or inert gas.
In step s 103, reaction chamber is purged using purge gas, the first presoma and its by-product that are not adsorbed by substrate is discharged
Object.In step S104, the second presoma is passed through reaction chamber, forms film with first forerunner's precursor reactant.In step s105,
Purge gas purges chamber, and chamber is discharged in the second presoma and byproduct of reaction that are not adsorbed by substrate.Repeat step
Rapid S102 to step S105, until reaching expected film thickness.
Fig. 2 shows the schematic diagrames of the atomic layer deposition apparatus of the prior art.
Atomic layer deposition apparatus 100 includes reaction chamber 110, air intake assembly and gas deflation assembly.
Reaction chamber 110 is closed vacuum chamber.There is centre bore in the bottom of reaction chamber 110, pedestal 112 is located at
In reaction chamber 110 and penetratingly across the centre bore of chamber 110.Substrate 113 is placed in the upper surface of heating pedestal 130, is used for
Absorption presoma simultaneously forms film.
Air intake assembly is included in the first pipeline 131, the second pipeline 132 and spray head (showerhead) 111.Spray head
111 are arranged in the top of reaction chamber 110, and are connected to the first pipeline 131 and the second pipeline 132, so that by the first pipeline
131 and second the gas that is passed through of pipeline 132 equably spray on substrate 113.First pipeline 131 is used for reaction chamber 110
It is passed through the first presoma, first flowmeter 120 is provided on the first pipeline 131, for monitoring the gas flow of carrier gas 152.The
The container 150 for placing the first presoma is connected on one pipeline 131, container 150 is connected by auxiliary pipeline and the first pipeline 131
Logical, the switch state of container 150 is controlled by the first valve 141 and the second valve 142.Third valve is additionally provided on the first pipeline 131
143, for controlling the path of the flowing of carrier gas 152.Second pipeline 132 is used to be passed through the second presoma 151 to reaction chamber 110,
Second pipeline 132 is provided with second flowmeter 121, for monitoring the gas flow of the second presoma 151.Second pipeline 132
Switch state is controlled by the 4th valve 144.It is communicated with third pipeline 133 on the second pipeline 132, is not being needed to reaction chamber
110 when being passed through the second presoma 151, and the second presoma 151 is directly discharged into vacuum pump 115 via third pipeline 133.
Gas deflation assembly includes the 4th pipeline 134 and vacuum pump 115, for reaction chamber 110 to be discharged in gas to be discharged.The
One end of four pipelines 134 is connected to the lower end of reaction chamber 110, and the other end is connected to vacuum pump 115, and vacuum pump 115 is, for example,
Dry pump or oil pump.Butterfly valve 114 is provided on 4th pipeline 134, butterfly valve 114 is used to control the pressure of reaction chamber 110.
In atomic layer deposition process, be passed through the first presoma amount it is more when, on the one hand, purge time can be extended, drop
Low yield energy；On the other hand, it will reduce the utilization rate of presoma, improve production cost.Therefore, reaction should be reduced to the greatest extent
The intake in source, to improve the utilization rate of production capacity and presoma.TiCl4Saturated vapor pressure curve graph it is as shown in Figure 3.Before first
Drive body is TiCl4When, due to TiCl4Saturated vapor pressure it is higher, such as at 10 DEG C, TiCl4Saturated vapour pressure is up to
5.8torr need to reduce the gas flow of carrier gas 152, to reduce the intake of the first presoma, the gas flow one of carrier gas 152
As for 20 to 100 standard milliliters it is per minute.When purging reaction chamber 110 using carrier gas 152, the flow of carrier gas 152 is too small, cannot
First presoma purging is clean, remain in it in the first pipeline 131 and reaction chamber 110.When the second presoma 151 is passed through
When chamber, chemically reacted with the first presoma for remaining in reaction chamber 110, to generate a large amount of particle.Therefore, originally
The inventor of application devises a kind of atomic layer deposition apparatus and method, reduces the film particles of atomic layer deposition, to solve
The above problem.
Fig. 4 shows the schematic diagram of atomic layer deposition apparatus according to an embodiment of the present invention.
Atomic layer deposition apparatus 200 includes chamber body, air intake assembly and gas deflation assembly.
Chamber body includes reaction chamber 210 and surging inner part.Reaction chamber 210 is, for example, closed vacuum chamber,
In alternate embodiments, cover plate for sealing can be used, is formed between chamber and cover board using the chamber with opening, opening
Accommodation space uses separate structure, energy side for accommodating the chamber members such as substrate, heating pedestal between cover board and chamber
Just chamber member is mounted and dismounted.There is centre bore in the bottom of reaction chamber 210, pedestal 212 is located at reaction chamber 110
In and penetratingly pass through chamber 210 centre bore.Substrate 213 is placed in the upper surface of heating pedestal 230, for adsorbing presoma simultaneously
Form film.
Air intake assembly is included in the first pipeline 231, the second pipeline 232, third pipeline 233, the 4th pipeline 234 and spray head
(showerhead)211.Spray head 211 is arranged in reaction chamber 210, and with the first pipeline 231, the second pipeline 232, the
Three pipelines 233, the connection of the 4th pipeline 234, so that by the first pipeline 231, the second pipeline 232, third pipeline 233, the 4th pipeline
234 gases being passed through equably spray on substrate 213.
First pipeline 231 is used to be passed through the first presoma of carrier gas carrying into reaction chamber 210, and carrier gas is by the first gas source
251 provide.The container 250 for placing the first presoma is connected on first pipeline 231, container 250 has heating function, makes
The first non-gaseous presoma is converted into the first presoma of gas phase.The arrival end of container 250 is connected to via by the second valve 242
First pipeline 231, outlet end are connected to the first pipeline 231 via third valve 243.In the first pipeline 231 close to reaction chamber 210
Near be provided with the first valve 241, for controlling the switch state of the first pipeline 231, do not needing to be passed through to reaction chamber
When one presoma, the first presoma is closed in the first pipeline 231 by the shutdown of the first valve 241.It is also set on the first pipeline 231
It is equipped with the 8th valve 248, the 8th valve 248 is located between the arrival end and outlet end of container 250.It is carried out in atom layer deposition process
When, the shutdown of the 8th valve 248, after technique, the 8th valve 248 is opened, for being passed through purge gas to the first pipeline 231.
Second pipeline 232 is used to be passed through the first purge gas to reaction chamber 210, and the first purge gas is by the first gas source
251 provide.The switch state of second pipeline 232 is controlled by the 4th valve 244, and the 4th valve 244 is located at the second pipeline 232 by proximal response
One end of chamber 210.Second pipeline 232 and the first pipeline 231 are connected to reaction chamber in one end close to reaction chamber 210
210 common inlet, the first pipeline 231 and the public supply side of the second pipeline 232 are connected to public first flowmeter 220,
Public first flowmeter 220 is further attached to containing the first gas source 251, and flowmeter is, for example, mass flowmenter (Mass
Flow Controller, MFC) or volume flowmeter (Volume Flow Controller, VFC).
Third pipeline 233 is used to be passed through the second presoma to reaction chamber 210, and the second presoma is mentioned by the second gas source 252
For.The supply side (i.e. the second supply side) of third pipeline 233 is connected to via second flowmeter 221 containing the second presoma 251
The second gas source 252,233 switch state of third pipeline controls by the 6th valve 246.The 6th pipe is communicated on third pipeline 233
The one end on road 236, the 6th pipeline 236 is connected between second flowmeter 221 and the 6th valve 246, and the other end is connected to exhaust group
The switch state of part, the 6th pipeline 236 is controlled by the 5th valve 245.The second presoma 251 be not passed through into reaction chamber 210
When, the second presoma 251 is directly discharged into vacuum pump 215 via the 6th pipeline 236.
4th pipeline 234 is used to be passed through the second purge gas to reaction chamber 210, and the second purge gas is by third gas source
253 provide.The supply side of 4th pipeline 234 is connected to third gas source 253 via third flowmeter 222.4th pipeline 234 is opened
Off status is controlled by the 7th valve 247, and the 7th valve 247 is located at the 4th pipeline 234 close to one end of reaction chamber 210.4th pipeline
234, the second pipeline 232 and 231 three of the first pipeline are connected to the public affairs of reaction chamber 210 in one end close to reaction chamber 210
Entrance altogether leads to the first purge gas and the second purge gas after the common inlet close to 210 one end of reaction chamber is converged
Enter reaction chamber 210.
Gas deflation assembly includes the 5th pipeline 235 and vacuum pump 215, for reaction chamber 210 to be discharged in gas to be discharged.The
One end of five pipelines 235 is connected to the lower end of reaction chamber 210, and the other end is connected to vacuum pump 215, and vacuum pump 215 is, for example,
Dry pump or oil pump.Butterfly valve 214 is provided on 5th pipeline 235, butterfly valve 214 is used to control the pressure of reaction chamber 210.
Fig. 5 shows the flow chart of Atomic layer deposition method according to an embodiment of the present invention, which adopts
It is carried out with according to the atomic layer deposition apparatus of Fig. 4.
Before starting the reaction, relative growth parameter is set.For example, the temperature of setting atomic layer deposition apparatus is 300 to 550
DEG C, reaction pressure is 0.5 to 10 support, and the gas flow of used carrier gas is that 10 to 5000 standard milliliters are per minute.
In step sl, the first presoma is passed through in reaction chamber.First presoma is, for example, titanium tetrachloride
(TiCl4), carrier gas is, for example, high pure nitrogen or inert gas.For example, the carrier gas through first flowmeter, passes through the second valve, third
Valve, the first valve and the first pipeline, the first presoma of gas phase carried in container enter reaction chamber, and the gas flow of carrier gas is for example
Per minute for 20 to 100 standard milliliters, the heating temperature of the first presoma is, for example, 10 to 70 DEG C.Meanwhile through third flowmeter
The second purge gas, reaction chamber is entered by the 4th pipeline and the 7th valve, and the volume flow of the second purge gas is greater than
The volume flow of carrier gas.At this point, the 6th valve, the 4th valve are closed, the 5th valve is opened, and the second presoma through second flowmeter is direct
It is discharged into vacuum pump, the second presoma is, for example, ammonia (NH3), the gas flow of the second presoma is, for example, 200 to 2000 standards
Milliliter is per minute.The time that first presoma is passed through reaction chamber is, for example, 5 milliseconds to 30 seconds, and saturation can be reached on substrate
Absorption.
In this step, the 7th valve is in the open state, and the second purge gas is as diluent gas, with carrier gas close to anti-
It answers one end of chamber to converge, to increase gas flow, is adsorbed on presoma sufficiently uniformly on substrate, and reduce substrate
Sufficiently the time required for the first presoma of absorption, production capacity can be improved.
In step s 2, reaction chamber is purged using the first purge gas for the first time.For example, on the basis of step S1,
First valve, the second valve, third valve are closed, the 4th valve is opened, and remaining part part is remained stationary, when keeping reaction chamber purging
Between be, for example, 1 second to 3 minutes.In this embodiment, the first gas source provides the first purge gas, and the 7th valve is in the open state,
Second purge gas is converged at the common inlet close to reaction chamber by the 4th pipeline and the first purge gas, jointly to depositing
It is that first presoma and its by-product of first valve into reaction chamber are purged.First purge gas and the second purge gass
Body is identical gas, for example, one of nitrogen and inert gas or a variety of.In alternate embodiments, it can also close
7th valve only continues through the second pipeline purging reaction chamber by the first purge gas.
In this step, the first presoma remains in the first pipeline, ensure that the continuity of reaction source, works as carrying
When thering is the carrier gas of the first presoma to be passed through reaction chamber again, it can directly be entered by the first valve, shorten the first presoma arteries and veins
The time into reaction chamber is rushed in, production capacity can be improved, while reducing the consumption of the first presoma, improves the first presoma
Utilization rate, saved cost.
Further, in this step, reaction chamber is purged by the second pipeline using the first purge gas, to be purged the
One presoma is present in the first valve into the path of reaction chamber, is present in first with the first presoma to be purged in the prior art
The path of valve to reaction chamber is compared, and the pipeline distance of the first presoma to be purged is shortened, and avoids purging incomplete problem,
The particle level for reducing film, improves film quality.Further, shorten the pipeline distance of the first presoma to be purged, drop
Low purge time, improves production capacity.
Further, in this step, the 7th valve is in the open state, and the second purge gas and the first purge gas are common
It is purged to first presoma of first valve into reaction chamber is present in, increases the gas flow of the first purge gas,
It avoids purging incomplete problem, reduces the particle level of film, improve film quality.
In step s3, the second presoma is passed through in reaction chamber.Second presoma is, for example, ammonia (NH3).For example,
On the basis of step S2, the 5th valve is closed, opens the 6th valve, the second presoma of the certain flow through second flowmeter leads to
The 6th valve and third pipeline are crossed, the second presoma is passed through reaction chamber.The gas flow of second presoma be, for example, 200 to
10000 standard milliliters are per minute, and it is, for example, 100 milliseconds to 30 seconds that the second presoma, which is passed through the chamber time, can reach in substrate
Saturation absorption.
In step s 4, reaction chamber is purged using the first purge gas for the second time.For example, on the basis of step S3,
The 6th valve is closed, the 5th valve is opened, remaining part is remained stationary.7th valve is in the open state, and the second purge gas passes through
4th pipeline and the first purge gas are converged at the common inlet close to reaction chamber, jointly to being present in reaction chamber
Second presoma and byproduct of reaction are purged.The purge time for keeping reaction chamber is, for example, 1 second to 30 seconds.
In step s 5, judge whether to complete circulation.If the judgment is No, then step S1 to S4 is repeated；If sentenced
It is yes for breaking, then process ends.
Fig. 6 a and 6b respectively illustrate distribution of particles situation signal of the substrate before and after deposition film according to prior art
Figure.
Table 1 shows the statistical result of the distribution of particles according to the substrate in Fig. 6 a and 6b before and after deposition film.
Table 1:
In the prior art, carrier gas enters reaction chamber, the first presoma quilt by the first pipeline the first presoma of carrying
It is residual in the first pipeline and reaction chamber by the first pipeline purging using carrier gas after substrate in reaction chamber fully absorbs
The first presoma and its by-product stayed.For forming titanium nitride membrane, using TiCl4As the first presoma, due to
TiCl4Saturated vapour pressure it is higher, therefore should use lesser carrier gas gas flow, with save purge time and save at
This.But the gas flow of lesser carrier gas will lead to and remain in the first pipeline and reaction chamber TiCl4Can not be clean by purging,
When the second presoma is passed through reaction chamber, with the TiCl for remaining in the first pipeline and reaction chamber4It chemically reacts, thus
A large amount of particle is generated, will seriously affect the quality of film.
Distribution of particles situation schematic diagram of the substrate before deposition film is as shown in Figure 6 a, substrate surface amounts of particles compared with
It is few；Distribution of particles situation schematic diagram of the substrate after deposition film is as shown in Figure 6 b, more in the amounts of particles of substrate surface.Root
According to the statistical result of table 1 it is found that after deposition film, the amounts of particles of substrate surface is dramatically increased, and total number of particles increases from 37
Add to 2384, wherein diameter is dramatically increased in 0.08 to 0.12um amounts of particles, increases to 1364 from 2.
Fig. 7 a and 7b respectively illustrate distribution of particles situation of the substrate according to an embodiment of the present invention before and after deposition film
Schematic diagram.
Table 2 shows the statistical result of the distribution of particles according to the substrate in Fig. 7 a and 7b before and after deposition film.
Table 2:
| Particle diameter/um | Before deposition film | After deposition film |
| 0.06-0.08 | 4 | 3 |
| 0.08-0.12 | 5 | 8 |
| 0.12-0.2 | 1 | 2 |
| 0.2-0.3 | 1 | 4 |
| 0.3-0.5 | 1 | 0 |
| >0.5 | 5 | 10 |
| Particle total amount | 17 | 27 |
In this embodiment, carrier gas enters reaction chamber, the first presoma quilt by the first pipeline the first presoma of carrying
After substrate in reaction chamber fully absorbs, the first purge gas is located at the first valve to reaction chamber by the second pipeline purging
Remaining first presoma and its by-product in pipeline, while the second purge gas is existed by the 4th pipeline and the first purge gas
Converge close to one end of reaction chamber, purges to being present in the first presoma of first valve into reaction chamber, add jointly
The big gas flow of purge gas, avoids purging incomplete problem, reduces the particle level of film, improve film matter
Amount.
Distribution of particles situation schematic diagram of the substrate before deposition film is as shown in Figure 7a, substrate surface amounts of particles compared with
It is few；Distribution of particles situation schematic diagram of the substrate after deposition film is as shown in Figure 7b, slightly increases in the amounts of particles of substrate surface
It is more.According to the statistical result of table 1 it is found that after deposition film, the variation of the amounts of particles of substrate surface is not significant, total number of particles from
17 increase to 27, it can be seen that, the atomic layer deposition apparatus and Atomic layer deposition method of the embodiment of the present invention effectively drop
The low particle level of film, improves film quality.
It is as described above according to the embodiment of the present invention, these embodiments details all there is no detailed descriptionthe, also not
Limiting the invention is only the specific embodiment.Obviously, as described above, can make many modifications and variations.This explanation
These embodiments are chosen and specifically described to book, is principle and practical application in order to better explain the present invention, thus belonging to making
Technical field technical staff can be used using modification of the invention and on the basis of the present invention well.The present invention is only by right
The limitation of claim and its full scope and equivalent.
Claims (12)
1. a kind of atomic layer deposition apparatus characterized by comprising
Reaction chamber is connected with the first pipeline, the second pipeline and third pipeline, respectively via first pipeline, described
Two pipelines and the third pipeline are passed through the first presoma, the first purge gas and the second presoma,
It wherein, include the first valve on first pipeline, first valve is adjacent to first pipeline and the reaction chamber
Link position, thus control the first presoma supply.
2. atomic layer deposition apparatus according to claim 1, which is characterized in that first pipeline and second pipeline
The first public supply side is connected to obtain the carrier gas of first presoma and first purge gas respectively.
3. atomic layer deposition apparatus according to claim 1, which is characterized in that further include: the 4th pipeline is reacted with described
Chamber is connected, for providing the second purge gas to the reaction chamber.
4. atomic layer deposition apparatus according to claim 1, which is characterized in that further include:
Container comprising first presoma and has arrival end and outlet end；
Second valve and third valve, the arrival end of the container and the outlet end are respectively via second valve and described
Three valves are connected to first pipeline；And
4th valve, the link position on second pipeline and adjacent to second pipeline and the reaction chamber,
Wherein, when being passed through first presoma, first valve, the second valve and third valve are opened, the 4th valve breakdown,
When being passed through first purge gas, the shutdown of at least one of first valve, the second valve and third valve, described the
Four valves are opened.
5. atomic layer deposition apparatus according to claim 1, which is characterized in that further include:
Vacuum pump, via the 5th piping connection to the second supply side of second presoma,
Wherein, when being passed through second presoma, second presoma is via second Pipeline transport to the reaction
In chamber,
When being passed through first presoma and purge gas, second presoma is via the 5th Pipeline transport to described
Vacuum pump.
6. a kind of Atomic layer deposition method, which is characterized in that including the following steps repeated:
S1, the first presoma that carrier gas carrying is passed through into reaction chamber；
It is passed through the first purge gas in S2, Xiang Suoshu reaction chamber, the reaction chamber is purged；
The second presoma is passed through in S3, Xiang Suoshu reaction chamber, before described first adsorbed on second presoma and substrate
It drives precursor reactant and generates film；And
It is passed through the first purge gas in S4, Xiang Suoshu reaction chamber, the reaction chamber is purged,
Wherein, in step S2, S3 and S4, first presoma is closed in the first pipeline.
7. Atomic layer deposition method according to claim 6, which is characterized in that further include: at least in step S2 and S4,
The second purge gas is passed through in the reaction chamber to assist purging.
8. Atomic layer deposition method according to claim 7, which is characterized in that the volume flow of second purge gas
Greater than the volume flow of first purge gas.
9. Atomic layer deposition method according to claim 6, which is characterized in that the carrier gas and first purge gas
It is provided in the reaction chamber via public supply side and different pipelines.
10. Atomic layer deposition method according to claim 6, which is characterized in that in step sl, control the carrier gas stream
Enter in the reaction chamber after the container of included first presoma, and control second precursor flows are to true
Sky pump.
11. Atomic layer deposition method according to claim 6, which is characterized in that in step s3, before control described second
It drives body to enter in the reaction chamber, and stops providing the carrier gas.
12. Atomic layer deposition method according to claim 6, which is characterized in that in step S2 and S4, control described the
Two precursor flows to vacuum pump, and stopping provides the carrier gas.
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| CN201811562115.4A CN109518164A (en) | 2018-12-20 | 2018-12-20 | Atomic layer deposition apparatus and method |
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| CN110195216A (en) * | 2019-07-15 | 2019-09-03 | 浙江祺跃科技有限公司 | A kind of atomic layer deposition apparatus |
| CN111876749A (en) * | 2020-07-17 | 2020-11-03 | 上海华力集成电路制造有限公司 | Method for improving thickness difference of silicon wafer film in furnace tube process |
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