CN112899652A - Device and method for preparing thin film material by atomic layer deposition - Google Patents
Device and method for preparing thin film material by atomic layer deposition Download PDFInfo
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- CN112899652A CN112899652A CN201911136169.9A CN201911136169A CN112899652A CN 112899652 A CN112899652 A CN 112899652A CN 201911136169 A CN201911136169 A CN 201911136169A CN 112899652 A CN112899652 A CN 112899652A
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- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 57
- 239000010409 thin film Substances 0.000 title claims abstract description 35
- 239000000463 material Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000002243 precursor Substances 0.000 claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 17
- 239000010408 film Substances 0.000 abstract description 14
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000005137 deposition process Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 239000010431 corundum Substances 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Abstract
The invention discloses a device and a method for preparing a thin film material by atomic layer deposition, which comprises a chamber; the first pipeline is communicated with one end of the chamber, and a first precursor is introduced into the first pipeline to enter the chamber; the second pipeline is communicated with one end of the chamber and is filled with a second precursor to enter the chamber; the muffle furnace is arranged on the outer side of the chamber and heats the chamber in a segmented manner, wherein a first segment of the muffle furnace heats the substrate to a first temperature, the first precursor and the second precursor are introduced into the chamber at the first temperature, and a second segment of the muffle furnace is heated to a second temperature; and one end of the vacuumizing pipeline is communicated with the other end of the cavity. The method achieves the technical effects of improving the reaction activity of the precursor, widening the selection of the atomic layer deposition precursor and improving the crystallinity of the deposited film.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a device and a method for preparing a thin film material by atomic layer deposition.
Background
Atomic Layer Deposition (ALD) is a special chemical vapor deposition technology, can realize a thin film preparation device for monoatomic layer deposition, and has the characteristics of excellent shape retention, large-area uniformity, accurate film thickness controllability and the like. Since 2001, the international semiconductor industry association has listed ALD as a candidate for compatibility with microelectronic processes, it has won extensive attention from world and academia. In 2007, an Inter company introduces an ALD deposition technology into a production line on a 45nm technology node in the semiconductor industry, so that the power consumption of a microprocessor is reduced, and the running speed is increased. In recent years, ALD technology has been widely used in the fields of microelectronics, optoelectronics, optics, nanotechnology, micromechanical systems, energy, catalysis, and the like.
Currently, atomic layer deposition techniques show great commercial promise, but also face significant challenges. First, ALD precursors need to be more reactive and thus the current availability of suitable ALD precursors is also scarce, which directly impacts the deposition of some key materials and the quality of the resulting thin films. Secondly, the thin films obtained by the ALD technique at present mainly include amorphous thin films and single crystal thin films, and it is difficult to obtain a thin film material with high crystallinity, which limits the application of the ALD technique in these fields. By utilizing the high-temperature ALD technology, higher energy can be provided for the precursor, so that the requirement on high activity of the reaction precursor is lowered, and the selection of the reaction precursor is expanded. Meanwhile, the crystallinity of the prepared film can be improved by utilizing high temperature, so that the requirements of certain devices are met.
Because the cavity of the atomic layer deposition equipment in the prior art is metal and is large, the temperature rising and reducing speed of the cavity is very slow, and the atomic layer deposition equipment is not suitable for the atomic layer deposition precursor with low activity.
Disclosure of Invention
The embodiment of the invention provides a device and a method for preparing a thin film material by atomic layer deposition, which are used for solving the technical problems that in the prior art, a cavity of atomic layer deposition equipment is metal, the cavity is large, the temperature rising and cooling speed of the cavity is very slow, and the atomic layer deposition equipment is not suitable for atomic layer deposition precursors with low activity, and the temperature of the precursors and the substrate temperature of a deposition process are regulated and controlled, so that the reaction activity of the precursors is improved, the cavity adsorption in the transmission process is reduced, the selection of the precursors for atomic layer deposition is widened, and the crystallinity of the deposited thin film is improved.
In order to solve the above problem, in a first aspect, an embodiment of the present invention provides an apparatus for preparing a thin film material by atomic layer deposition, the apparatus including: a chamber; the first pipeline is communicated with one end of the chamber, and a first precursor is introduced into the first pipeline to enter the chamber; the second pipeline is communicated with one end of the chamber and is filled with a second precursor to enter the chamber; the muffle furnace is arranged on the outer side of the chamber and heats the chamber in a segmented manner, wherein a first segment of the muffle furnace heats the substrate to a first temperature, the first precursor and the second precursor are introduced into the chamber at the first temperature, and a second segment of the muffle furnace is heated to a second temperature; and one end of the vacuumizing pipeline is communicated with the other end of the cavity.
Preferably, the apparatus comprises: the vacuum pump is connected with the other end of the vacuumizing pipeline and vacuumizes the cavity into vacuum through the vacuumizing pipeline.
Preferably, the apparatus comprises: a vacuum gauge disposed on the first pipeline, the second pipeline, or the evacuation pipeline.
Preferably, the first precursor and the second precursor flow in a unidirectional straight line in the chamber.
Preferably, the wall thickness of the cavity is 1-10 mm, the length of the cavity is 0.6-3 m, and the inner diameter of the cavity is 2.5-20 cm.
Preferably, the heat-resistant temperature of the chamber is less than or equal to 1200 ℃.
Preferably, the chamber is made of a quartz tube or a corundum tube.
Preferably, the heating temperature of the muffle furnace is 25-1200 ℃.
In a second aspect, an embodiment of the present invention provides a method for preparing a thin film material by atomic layer deposition, where the method includes: placing a silicon wafer in a chamber, wherein the surface of the silicon wafer is consistent with the flow direction of a first precursor and the flow direction of a second precursor; starting a vacuum pump and a muffle furnace, and heating the cavity to a first temperature by using the muffle furnace; detecting the air pressure in the chamber in real time according to a vacuum gauge, and alternately introducing the first precursor or the second precursor into the chamber through a first pipeline and a second pipeline when the air pressure in the chamber reaches a preset threshold value; and heating the first precursor and the second precursor in the chamber to a second temperature according to the muffle furnace, and obtaining a thin film material through atomic layer deposition.
One or more technical solutions in the embodiments of the present invention at least have one or more of the following technical effects:
the embodiment of the invention provides a device and a method for preparing a film material by atomic layer deposition, wherein the device comprises a chamber; the first pipeline is communicated with one end of the chamber, and a first precursor is introduced into the first pipeline to enter the chamber; the second pipeline is communicated with one end of the chamber and is filled with a second precursor to enter the chamber; the muffle furnace is arranged on the outer side of the chamber and heats the chamber in a segmented manner, wherein a first segment of the muffle furnace heats the substrate to a first temperature, the first precursor and the second precursor are introduced into the chamber at the first temperature, and a second segment of the muffle furnace is heated to a second temperature; and one end of the vacuumizing pipeline is communicated with the other end of the cavity. Through adopting muffle furnace segmentation heating, can regulate and control the substrate temperature of the temperature of precursor and deposition process to improve the reactivity of precursor, reduce the chamber absorption in the transmission course, realized widening atomic layer deposition precursor's selection, improve the technical effect of deposited film's crystallinity, it is metal and the cavity is great to solve the atomic layer deposition equipment cavity among the prior art, and is very slow to the intensification of cavity and cooling speed, is not suitable for the lower atomic layer deposition precursor's of activity technical problem.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
FIG. 1 is a schematic structural diagram of an apparatus for preparing a thin film material by atomic layer deposition in an embodiment of the present disclosure;
FIG. 2 is a flow chart of a method for preparing a thin film material by atomic layer deposition in an embodiment of the present disclosure;
description of reference numerals: the device comprises a first pipeline 1, a second pipeline 2, a chamber 3, a muffle furnace 4, a vacuum gauge 5, a vacuumizing pipeline 6 and a vacuum pump 7.
Detailed Description
The embodiment of the invention provides a device and a method for preparing a thin film material by atomic layer deposition, which are used for solving the technical problems that in the prior art, a cavity of atomic layer deposition equipment is metal, the cavity is large, the temperature rising and cooling speed of the cavity is very slow, and the atomic layer deposition equipment is not suitable for atomic layer deposition precursors with low activity, and the temperature of the precursors and the substrate temperature of a deposition process are regulated and controlled, so that the reaction activity of the precursors is improved, the cavity adsorption in the transmission process is reduced, the selection of the precursors for atomic layer deposition is widened, and the crystallinity of the deposited thin film is improved.
According to the technical scheme in the embodiment of the invention, the conception of the invention is as follows: passing through the chamber; the first pipeline is communicated with one end of the chamber, and a first precursor is introduced into the first pipeline to enter the chamber; the second pipeline is communicated with one end of the chamber and is filled with a second precursor to enter the chamber; the muffle furnace is arranged on the outer side of the chamber and heats the chamber in a segmented manner, wherein a first segment of the muffle furnace heats the substrate to a first temperature, the first precursor and the second precursor are introduced into the chamber at the first temperature, and a second segment of the muffle furnace is heated to a second temperature; and one end of the vacuumizing pipeline is communicated with the other end of the cavity. The method achieves the technical effects of regulating and controlling the temperature of the precursor and the substrate temperature of the deposition process, thereby improving the reaction activity of the precursor, reducing the chamber adsorption in the transmission process, widening the selection of the atomic layer deposition precursor and improving the crystallinity of the deposited film.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
An embodiment of the present invention provides an apparatus for preparing a thin film material by atomic layer deposition, referring to fig. 1, the apparatus includes:
a chamber 3;
further, the wall thickness of the cavity 3 is 1-10 mm, the length of the cavity 3 is 0.6-3 m, and the inner diameter of the cavity 3 is 2.5-20 cm. Furthermore, the heat-resistant temperature of the chamber 3 is less than or equal to 1200 ℃. Further, the chamber 3 is made of a quartz tube or a corundum tube.
Specifically, the chamber 3 is made of a quartz tube or a corundum tube, has the characteristics of fast temperature rise and high temperature resistance, can be rapidly heated and cooled, and can be controlled at room temperature to 1200 ℃ for deposition process or high-temperature annealing. Wherein the chamber 3 is preferably a quartz tube. The wall thickness of the cavity 3 is 1-10 mm, the length of the cavity 3 is 0.6-3 m, and the inner diameter of the cavity 3 is 2.5-20 cm. Preferably, the wall thickness of the cylindrical tubular cavity of the chamber 3 is 3mm, the length of the tube is 1.5m, the inner diameter is 5cm, and the high temperature resistance is 1200 ℃.
The first pipeline 1 is communicated with one end of the chamber 3, and a first precursor is introduced into the first pipeline 1 and enters the chamber 3; the second pipeline 2 is communicated with one end of the chamber 3, and a second precursor is introduced into the second pipeline 2 and enters the chamber 3; and one end of the vacuumizing pipeline 6 is communicated with the other end of the cavity 3.
Further, the first precursor and the second precursor flow in a unidirectional straight line in the chamber 3.
Specifically, the first pipeline 1 is communicated with one end of the chamber 3, the first precursor is introduced into the chamber 3 through the first pipeline 1, the second pipeline 2 is communicated with one end of the chamber 3, and the second precursor is introduced into the chamber 3 through the second pipeline 2. The first precursor and the second precursor are alternately introduced into the first pipeline 1 and the second pipeline 2 respectively and enter the chamber, and the vacuumizing pipeline 6 is arranged at the other end of the chamber 3, so that the unidirectional linear flow of precursor airflow is favorably realized, and the purging time in the deposition process is shortened.
The muffle furnace 4 is arranged outside the chamber 3, the muffle furnace 4 heats the chamber 3 in a segmented manner, a first section of the muffle furnace 4 heats the substrate to a first temperature, the first precursor and the second precursor are introduced into the chamber 3 at the first temperature, and a second section of the muffle furnace 4 heats to a second temperature;
further, the heating temperature of the muffle furnace 4 is 25-1200 ℃.
Specifically, the muffle furnace 4 is arranged on the outer side of the chamber 3, the chamber 3 can be rapidly heated by the muffle furnace 4, and the heating temperature of the muffle furnace 4 is 25-1200 ℃. According to different crystallization temperatures required by different film materials, the muffle furnace 4 is heated in a segmented mode, the chamber 3 is heated by the first section of the muffle furnace 4 to reach a first temperature, namely, a precursor is heated to meet the process requirement of the precursor, the first precursor and the second precursor are introduced into the chamber 3 at the first temperature, the second section of the muffle furnace 4 is heated to reach a second temperature, the second temperature is the crystallization temperature of the deposited film of the first precursor and the second precursor, and the temperature of the chamber is heated by the muffle furnace 4 to prepare the single crystal film with excellent quality. By adopting the muffle furnace for segmented heating, the temperature of the precursor and the substrate temperature of the deposition process can be regulated and controlled, so that the reaction activity of the precursor is improved, and the chamber adsorption in the transmission process is reduced.
Further, the apparatus comprises: and the vacuum pump 7 is connected with the other end of the vacuumizing pipeline 6, and the vacuum pump 7 vacuumizes the cavity 3 through the vacuumizing pipeline 6. Further, the apparatus comprises: a vacuum gauge 5 disposed on the first pipeline 1, the second pipeline 2, or the evacuation pipeline 6.
Specifically, the apparatus of the embodiment of the present application further includes a vacuum pump 7 and a vacuum gauge 5. The other end of the vacuum-pumping pipeline 6 is connected with the vacuum pump 7, and the vacuum pump 7 pumps the inside of the chamber 3 into vacuum through the vacuum-pumping pipeline 6. The vacuum gauge 5 is arranged on the first pipeline 1, the second pipeline 2 or the vacuumizing pipeline 6, the vacuum gauge 5 is preferably arranged on the vacuumizing pipeline 6, the air pressure in the chamber 3 is detected and displayed in real time, and when the air pressure in the chamber 3 meets the requirement suitable for atomic layer deposition of the thin film material, a first precursor and a second precursor are alternately introduced into the chamber according to the first pipeline 1 and the second pipeline 2 to deposit the thin film material.
Example two
An embodiment of the present invention provides a method for preparing a thin film material by atomic layer deposition, referring to fig. 2, the method includes steps 110 to 140:
step 110: placing a silicon wafer in a chamber, wherein the surface of the silicon wafer is consistent with the flow direction of a first precursor and the flow direction of a second precursor;
step 120: starting a vacuum pump and a muffle furnace, and heating the cavity to a first temperature by using the muffle furnace;
specifically, a silicon wafer of 5cm × 5cm is horizontally placed in a chamber, so that the surface of the silicon wafer is consistent with the flow direction of a first precursor and a second precursor, and uniform adsorption of the precursors is facilitated; starting a vacuum pump, starting a muffle furnace heating chamber, heating the chamber to a first temperature by using the muffle furnace, depositing aluminum nitride in the embodiment of the invention, and introducing a first precursor into a first pipeline, wherein the first precursor is an aluminum source, and the aluminum source is preferably trimethylaluminum; and introducing a second precursor into a second pipeline, wherein the second precursor is a nitrogen source, and the nitrogen source is preferably ammonia gas. Since the preferred process temperature for the two precursors selected is 400 ℃, it is desirable to maintain the substrate temperature at 400 ℃, at which time the chamber temperature is heated to and maintained at 400 ℃ by thermostatic control through a muffle furnace.
Step 130: detecting the air pressure in the chamber in real time according to a vacuum gauge, and alternately introducing the first precursor or the second precursor into the chamber through a first pipeline and a second pipeline when the air pressure in the chamber reaches a preset threshold value;
step 140: and heating the first precursor and the second precursor in the chamber to a second temperature according to the muffle furnace, and obtaining a thin film material through atomic layer deposition.
Specifically, the air pressure in the chamber is detected in real time through a vacuum gauge, and when the air pressure in the chamber reaches a preset threshold value, the first precursor or the second precursor is alternately introduced into the chamber through a first pipeline and a second pipeline to be deposited to obtain the thin film material. When the crystallization temperature of some film materials is higher and may be higher than the temperature window of the atomic layer deposition process, after the film deposition is finished at the higher temperature, the muffle furnace is utilized to heat the chamber to a second temperature, the chamber is kept at the second temperature for a certain time, and the monocrystalline film material with excellent quality can be obtained after the temperature is reduced.
The technical scheme provided in the embodiment of the application at least has the following technical effects or advantages:
the embodiment of the invention provides a device and a method for preparing a film material by atomic layer deposition, wherein the device comprises a chamber; the first pipeline is communicated with one end of the chamber, and a first precursor is introduced into the first pipeline to enter the chamber; the second pipeline is communicated with one end of the chamber and is filled with a second precursor to enter the chamber; the muffle furnace is arranged on the outer side of the chamber and heats the chamber in a segmented manner, wherein a first segment of the muffle furnace heats the substrate to a first temperature, the first precursor and the second precursor are introduced into the chamber at the first temperature, and a second segment of the muffle furnace is heated to a second temperature; and one end of the vacuumizing pipeline is communicated with the other end of the cavity. Through adopting muffle furnace segmentation heating, can regulate and control the substrate temperature of the temperature of precursor and deposition process to improve the reactivity of precursor, reduce the chamber absorption in the transmission course, realized widening atomic layer deposition precursor's selection, improve the technical effect of deposited film's crystallinity, it is metal and the cavity is great to solve the atomic layer deposition equipment cavity among the prior art, and is very slow to the intensification of cavity and cooling speed, is not suitable for the lower atomic layer deposition precursor's of activity technical problem.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various modifications and variations can be made in the embodiments of the present invention without departing from the spirit or scope of the embodiments of the invention. Thus, if such modifications and variations of the embodiments of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to encompass such modifications and variations.
Claims (9)
1. An apparatus for preparing a thin film material by atomic layer deposition, the apparatus comprising:
a chamber;
the first pipeline is communicated with one end of the chamber, and a first precursor is introduced into the first pipeline to enter the chamber;
the second pipeline is communicated with one end of the chamber and is filled with a second precursor to enter the chamber;
the muffle furnace is arranged on the outer side of the chamber and heats the chamber in a segmented manner, wherein a first segment of the muffle furnace heats the substrate to a first temperature, the first precursor and the second precursor are introduced into the chamber at the first temperature, and a second segment of the muffle furnace is heated to a second temperature;
and one end of the vacuumizing pipeline is communicated with the other end of the cavity.
2. The atomic layer deposition apparatus for producing a thin film material according to claim 1, wherein the apparatus comprises:
the vacuum pump is connected with the other end of the vacuumizing pipeline and vacuumizes the cavity into vacuum through the vacuumizing pipeline.
3. The atomic layer deposition apparatus for producing a thin film material according to claim 1, wherein the apparatus comprises:
a vacuum gauge disposed on the first pipeline, the second pipeline, or the evacuation pipeline.
4. The apparatus for atomic layer deposition preparation of a thin film material according to claim 1, wherein the first precursor and the second precursor flow in a unidirectional straight line in the chamber.
5. The apparatus for preparing a thin film material by atomic layer deposition according to claim 1, wherein the wall thickness of the chamber is 1 to 10mm, the length of the chamber is 0.6 to 3m, and the inner diameter of the chamber is 2.5 to 20 cm.
6. The apparatus for preparing thin film material by atomic layer deposition according to claim 1, wherein the heat resistant temperature of the chamber is 1200 ℃ or less.
7. The apparatus for crystallizing a thin film material as claimed in claim 1, wherein the chamber is made of a quartz tube or a sapphire tube.
8. The apparatus for preparing thin film material by atomic layer deposition according to claim 1, wherein the heating temperature of the muffle furnace is 25-1200 ℃.
9. A method for preparing a thin film material by atomic layer deposition, the method comprising:
placing a silicon wafer in a chamber, wherein the surface of the silicon wafer is consistent with the flow direction of a first precursor and the flow direction of a second precursor;
starting a vacuum pump and a muffle furnace, and heating the cavity to a first temperature by using the muffle furnace;
detecting the air pressure in the chamber in real time according to a vacuum gauge, and alternately introducing the first precursor or the second precursor into the chamber through a first pipeline and a second pipeline when the air pressure in the chamber reaches a preset threshold value;
and heating the first precursor and the second precursor in the chamber to a second temperature according to the muffle furnace, and obtaining a thin film material through atomic layer deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911136169.9A CN112899652A (en) | 2019-11-19 | 2019-11-19 | Device and method for preparing thin film material by atomic layer deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911136169.9A CN112899652A (en) | 2019-11-19 | 2019-11-19 | Device and method for preparing thin film material by atomic layer deposition |
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| CN112899652A true CN112899652A (en) | 2021-06-04 |
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