CN112899653A - High-temperature atomic layer deposition device and method - Google Patents
High-temperature atomic layer deposition device and method Download PDFInfo
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- CN112899653A CN112899653A CN201911136184.3A CN201911136184A CN112899653A CN 112899653 A CN112899653 A CN 112899653A CN 201911136184 A CN201911136184 A CN 201911136184A CN 112899653 A CN112899653 A CN 112899653A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
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- Chemical Kinetics & Catalysis (AREA)
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- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a high-temperature atomic layer deposition device and a method, wherein a chamber is of a columnar tubular cavity structure; the first pipeline is communicated with one end of the chamber, and a first precursor is introduced into the first pipeline to enter the chamber; the second pipeline is communicated with one end of the chamber and is filled with a second precursor to enter the chamber; a muffle disposed outside the chamber; and one end of the vacuumizing pipeline is communicated with the other end of the cavity. The technical problems that in the prior art, a cavity of the atomic layer deposition equipment is metal, the cavity is large, the temperature rising and cooling speed of the cavity is slow, and the atomic layer deposition precursor with low activity is not suitable are solved, the one-way flow of precursor airflow is achieved, the process purging time is shortened, the temperature rising and cooling of the cavity are fast, the temperature control deposition or high-temperature annealing is realized, and the crystallinity of a deposited film is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a high-temperature atomic layer deposition device and method.
Background
Atomic Layer Deposition (ALD) is a special chemical vapor deposition technology, can realize a thin film preparation device for monoatomic layer deposition, and has the characteristics of excellent shape retention, large-area uniformity, accurate film thickness controllability and the like. Since 2001, the international semiconductor industry association has listed ALD as a candidate for compatibility with microelectronic processes, it has won extensive attention from world and academia. In 2007, an Inter company introduces an ALD deposition technology into a production line on a 45nm technology node in the semiconductor industry, so that the power consumption of a microprocessor is reduced, and the running speed is increased. In recent years, ALD technology has been widely used in the fields of microelectronics, optoelectronics, optics, nanotechnology, micromechanical systems, energy, catalysis, and the like.
Currently, atomic layer deposition techniques show great commercial promise, but also face significant challenges. First, ALD precursors need to be more reactive and thus the current availability of suitable ALD precursors is also scarce, which directly impacts the deposition of some key materials and the quality of the resulting thin films. Secondly, the thin films obtained by the ALD technique at present mainly include amorphous thin films and single crystal thin films, and it is difficult to obtain a thin film material with high crystallinity, which limits the application of the ALD technique in these fields. By utilizing the high-temperature ALD technology, higher energy can be provided for the precursor, so that the requirement on high activity of the reaction precursor is lowered, and the selection of the reaction precursor is expanded. Meanwhile, the crystallinity of the prepared film can be improved by utilizing high temperature, so that the requirements of certain devices are met.
Because the cavity of the atomic layer deposition equipment in the prior art is metal and is large, the temperature rising and reducing speed of the cavity is very slow, and the atomic layer deposition equipment is not suitable for the atomic layer deposition precursor with low activity.
Disclosure of Invention
The embodiment of the invention provides a high-temperature atomic layer deposition device and method, which are used for solving the technical problems that in the prior art, a cavity of atomic layer deposition equipment is metal, the cavity is large, the temperature rising and reducing speed of the cavity is very slow, and the atomic layer deposition equipment is not suitable for atomic layer deposition precursors with low activity, so that the one-way flow of precursor airflow is achieved, the process purging time is shortened, the temperature can be quickly raised and reduced, the temperature-controlled deposition or high-temperature annealing is realized, and the crystallinity of deposited films is improved.
In order to solve the above problem, in a first aspect, an embodiment of the present invention provides a high temperature atomic layer deposition apparatus, including: the cavity is of a columnar tubular cavity structure; the first pipeline is communicated with one end of the chamber, and a first precursor is introduced into the first pipeline to enter the chamber; the second pipeline is communicated with one end of the chamber and is filled with a second precursor to enter the chamber; a muffle disposed outside the chamber; and one end of the vacuumizing pipeline is communicated with the other end of the cavity.
Preferably, the apparatus comprises: the vacuum pump is connected with the other end of the vacuumizing pipeline and vacuumizes the cavity into vacuum through the vacuumizing pipeline.
Preferably, the apparatus comprises: a vacuum gauge disposed on the first pipeline, the second pipeline, or the evacuation pipeline.
Preferably, the first precursor and the second precursor flow in a unidirectional straight line in the chamber.
Preferably, the wall thickness of the cavity is 1-10 mm, the length of the cavity is 0.6-3 m, and the inner diameter of the cavity is 2.5-20 cm.
Preferably, the heat-resistant temperature of the chamber is less than or equal to 1200 ℃.
Preferably, the chamber is made of a quartz tube or a corundum tube.
Preferably, the heating temperature of the muffle furnace is 25-1200 ℃.
In a second aspect, an embodiment of the present invention provides a method for high temperature atomic layer deposition, including: placing a silicon wafer in a chamber, wherein the surface of the silicon wafer is consistent with the flow direction of a first precursor and the flow direction of a second precursor; starting a vacuum pump and a muffle furnace, and heating the cavity to a first temperature by using the muffle furnace; detecting the air pressure in the chamber in real time according to a vacuum gauge, and alternately introducing the first precursor or the second precursor into the chamber through a first pipeline and a second pipeline when the air pressure in the chamber reaches a preset threshold value; and heating the first precursor and the second precursor in the chamber to a second temperature according to the muffle furnace, and obtaining a thin film material through atomic layer deposition.
One or more technical solutions in the embodiments of the present invention at least have one or more of the following technical effects:
the embodiment of the invention provides a high-temperature atomic layer deposition device and a high-temperature atomic layer deposition method, wherein a chamber is adopted, and the chamber is of a columnar tubular cavity structure; the first pipeline is communicated with one end of the chamber, and a first precursor is introduced into the first pipeline to enter the chamber; the second pipeline is communicated with one end of the chamber and is filled with a second precursor to enter the chamber; a muffle disposed outside the chamber; and one end of the vacuumizing pipeline is communicated with the other end of the cavity. Through the cavity that adopts column tubular cavity structure, the precursor lets in the pipeline that sets up in cavity one end, the pump line setting is at the other end of column cavity, be favorable to realizing the one-way flow of precursor air current, shorten technology purge time, can rapid heating up and cooling, realize accuse temperature deposit or high temperature annealing, improve the technological effect of deposited film's crystallinity, it is great to solve among the prior art that the atomic layer deposition equipment cavity is metal and cavity, it is very slow to the intensification of cavity and cooling rate, be unsuitable for the lower atomic layer deposition precursor's of activity technical problem.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
FIG. 1 is a schematic structural diagram of a high temperature atomic layer deposition apparatus according to an embodiment of the disclosure;
FIG. 2 is a flow chart of a method for high temperature atomic layer deposition in an embodiment of the present disclosure;
description of reference numerals: the device comprises a first pipeline 1, a second pipeline 2, a chamber 3, a muffle furnace 4, a vacuum gauge 5, a vacuumizing pipeline 6 and a vacuum pump 7.
Detailed Description
The embodiment of the invention provides a high-temperature atomic layer deposition device and method, which are used for solving the technical problems that in the prior art, a cavity of atomic layer deposition equipment is metal, the cavity is large, the temperature rising and reducing speed of the cavity is very slow, and the atomic layer deposition equipment is not suitable for atomic layer deposition precursors with low activity, so that the one-way flow of precursor airflow is achieved, the process purging time is shortened, the temperature can be quickly raised and reduced, the temperature-controlled deposition or high-temperature annealing is realized, and the crystallinity of deposited films is improved.
According to the technical scheme in the embodiment of the invention, the conception of the invention is as follows: the cavity is of a columnar tubular cavity structure; the first pipeline is communicated with one end of the chamber, and a first precursor is introduced into the first pipeline to enter the chamber; the second pipeline is communicated with one end of the chamber and is filled with a second precursor to enter the chamber; a muffle disposed outside the chamber; the vacuum pumping pipeline is communicated with one end of the cavity, the technical problems that in the prior art, the cavity of the atomic layer deposition equipment is metal, the cavity is large, the temperature rising and cooling speed of the cavity is very slow, and the atomic layer deposition equipment is not suitable for precursors with low activity are solved, the unidirectional flow of precursor airflow is achieved, the process purging time is shortened, the temperature can be quickly raised and cooled, the temperature-controlled deposition or high-temperature annealing is realized, and the technical effect of improving the crystallinity of deposited films is improved.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
An embodiment of the present invention provides a high temperature atomic layer deposition apparatus, referring to fig. 1, the apparatus includes:
the chamber 3 is of a columnar tubular cavity structure;
further, the wall thickness of the cavity 3 is 1-10 mm, the length of the cavity 3 is 0.6-3 m, and the inner diameter of the cavity 3 is 2.5-20 cm. Furthermore, the heat-resistant temperature of the chamber 3 is less than or equal to 1200 ℃. Further, the chamber 3 is made of a quartz tube or a corundum tube.
Specifically, the chamber 3 is of a cylindrical tubular cavity structure, the chamber 3 is made of a quartz tube or a corundum tube, has the characteristics of fast temperature rise and high temperature resistance, can be rapidly heated and cooled, and can be controlled at room temperature to 1200 ℃ for deposition process or high-temperature annealing. Wherein the chamber 3 is preferably a quartz tube. The wall thickness of the cavity 3 is 1-10 mm, the length of the cavity 3 is 0.6-3 m, and the inner diameter of the cavity 3 is 2.5-20 cm. Preferably, the wall thickness of the cylindrical tubular cavity of the chamber 3 is 3mm, the length of the tube is 1.5m, the inner diameter is 5cm, and the high temperature resistance is 1200 ℃.
The first pipeline 1 is communicated with one end of the chamber 3, and a first precursor is introduced into the first pipeline 1 and enters the chamber 3; the second pipeline 2 is communicated with one end of the chamber 3, and a second precursor is introduced into the second pipeline 2 and enters the chamber 3; and one end of the vacuumizing pipeline 6 is communicated with the other end of the cavity 3.
Further, the first precursor and the second precursor flow in a unidirectional straight line in the chamber 3.
Specifically, the first pipeline 1 is communicated with one end of the chamber 3, the first precursor is introduced into the chamber 3 through the first pipeline 1, the second pipeline 2 is communicated with one end of the chamber 3, and the second precursor is introduced into the chamber 3 through the second pipeline 2. The first precursor and the second precursor are alternately introduced into the first pipeline 1 and the second pipeline 2 respectively and enter the chamber, and the vacuumizing pipeline 6 is arranged at the other end of the chamber 3, so that the unidirectional linear flow of precursor airflow is favorably realized, and the purging time in the deposition process is shortened.
A muffle 4, said muffle 4 being arranged outside said chamber 3;
further, the heating temperature of the muffle furnace 4 is 25-1200 ℃. Further, the apparatus comprises: and the vacuum pump 7 is connected with the other end of the vacuumizing pipeline 6, and the vacuum pump 7 vacuumizes the cavity 3 through the vacuumizing pipeline 6. Further, the apparatus comprises: the vacuum gauge 5 is arranged on the first pipeline 1, the second pipeline 2 or the vacuumizing pipeline 6.
Particularly, the outer side of the cavity 3 is provided with the muffle furnace 4, the muffle furnace 4 can be used for rapidly heating the cavity 3, the heating temperature of the muffle furnace 4 is 25-1200 ℃, different crystallization temperatures are needed according to different film materials, and the single crystal film with excellent quality is prepared by heating the cavity through the muffle furnace 4. The device of the embodiment of the application also comprises a vacuum pump 7 and a vacuum gauge 5. The other end of the vacuum-pumping pipeline 6 is connected with the vacuum pump 7, and the vacuum pump 7 pumps the inside of the chamber 3 into vacuum through the vacuum-pumping pipeline 6. The vacuum gauge 5 is arranged on the first pipeline 1, the second pipeline 2 or the vacuumizing pipeline 6, the vacuum gauge 5 is preferably arranged on the vacuumizing pipeline 6, the air pressure in the chamber 3 is detected and displayed in real time, and when the air pressure in the chamber 3 meets the requirement suitable for atomic layer deposition of the thin film material, a first precursor and a second precursor are alternately introduced into the chamber according to the first pipeline 1 and the second pipeline 2 to deposit the thin film material.
Example two
An embodiment of the present invention provides a method for high temperature atomic layer deposition, referring to fig. 2, the method includes steps 110 to 140:
step 110: placing a silicon wafer in a chamber, wherein the surface of the silicon wafer is consistent with the flow direction of a first precursor and the flow direction of a second precursor;
step 120: starting a vacuum pump and a muffle furnace, and heating the cavity to a first temperature by using the muffle furnace;
specifically, a silicon wafer of 5cm × 5cm is horizontally placed in a chamber, so that the surface of the silicon wafer is consistent with the flow direction of a first precursor and a second precursor, and uniform adsorption of the precursors is facilitated; starting a vacuum pump, starting a muffle furnace heating chamber, heating the chamber to a first temperature by using the muffle furnace, depositing aluminum nitride in the embodiment of the invention, and introducing a first precursor into a first pipeline, wherein the first precursor is an aluminum source, and the aluminum source is preferably trimethylaluminum; and introducing a second precursor into a second pipeline, wherein the second precursor is a nitrogen source, and the nitrogen source is preferably ammonia gas. Since the preferred process temperature for the two precursors selected is 400 ℃, it is desirable to maintain the substrate temperature at 400 ℃, at which time the chamber temperature is heated to and maintained at 400 ℃ by thermostatic control through a muffle furnace.
Step 130: detecting the air pressure in the chamber in real time according to a vacuum gauge, and alternately introducing the first precursor or the second precursor into the chamber through a first pipeline and a second pipeline when the air pressure in the chamber reaches a preset threshold value;
step 140: and heating the first precursor and the second precursor in the chamber to a second temperature according to the muffle furnace, and obtaining a thin film material through atomic layer deposition.
Specifically, the air pressure in the chamber is detected in real time through a vacuum gauge, and when the air pressure in the chamber reaches a preset threshold value, the first precursor or the second precursor is alternately introduced into the chamber through a first pipeline and a second pipeline to be deposited to obtain the thin film material. When the crystallization temperature of some film materials is higher and may be higher than the temperature window of the atomic layer deposition process, after the film deposition is finished at the higher temperature, the muffle furnace is utilized to heat the chamber to a second temperature, the chamber is kept at the second temperature for a certain time, and the monocrystalline film material with excellent quality can be obtained after the temperature is reduced.
The technical scheme provided in the embodiment of the application at least has the following technical effects or advantages:
the embodiment of the invention provides a high-temperature atomic layer deposition device and a high-temperature atomic layer deposition method, wherein a chamber is adopted, and the chamber is of a columnar tubular cavity structure; the first pipeline is communicated with one end of the chamber, and a first precursor is introduced into the first pipeline to enter the chamber; the second pipeline is communicated with one end of the chamber and is filled with a second precursor to enter the chamber; a muffle disposed outside the chamber; and one end of the vacuumizing pipeline is communicated with the other end of the cavity. Through the cavity that adopts column tubular cavity structure, the precursor lets in the pipeline that sets up in cavity one end, the pump line setting is at the other end of column cavity, be favorable to realizing the one-way flow of precursor air current, shorten technology purge time, can rapid heating up and cooling, realize accuse temperature deposit or high temperature annealing, improve the technological effect of deposited film's crystallinity, it is great to solve among the prior art that the atomic layer deposition equipment cavity is metal and cavity, it is very slow to the intensification of cavity and cooling rate, be unsuitable for the lower atomic layer deposition precursor's of activity technical problem.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various modifications and variations can be made in the embodiments of the present invention without departing from the spirit or scope of the embodiments of the invention. Thus, if such modifications and variations of the embodiments of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to encompass such modifications and variations.
Claims (9)
1. A high temperature atomic layer deposition apparatus, the apparatus comprising:
the cavity is of a columnar tubular cavity structure;
the first pipeline is communicated with one end of the chamber, and a first precursor is introduced into the first pipeline to enter the chamber;
the second pipeline is communicated with one end of the chamber and is filled with a second precursor to enter the chamber;
a muffle disposed outside the chamber;
and one end of the vacuumizing pipeline is communicated with the other end of the cavity.
2. The high temperature atomic layer deposition apparatus of claim 1, wherein the apparatus comprises:
the vacuum pump is connected with the other end of the vacuumizing pipeline and vacuumizes the cavity into vacuum through the vacuumizing pipeline.
3. The high temperature atomic layer deposition apparatus of claim 1, wherein the apparatus comprises:
a vacuum gauge disposed on the first pipeline, the second pipeline, or the evacuation pipeline.
4. The high temperature atomic layer deposition apparatus according to claim 1, wherein the first precursor and the second precursor flow in a unidirectional straight line in the chamber.
5. The high temperature atomic layer deposition apparatus according to claim 1, wherein the chamber has a wall thickness of 1 to 10mm, a length of 0.6 to 3m, and an inner diameter of 2.5 to 20 cm.
6. The high temperature atomic layer deposition apparatus of claim 1, wherein the chamber has a refractory temperature of 1200 ℃ or less.
7. The apparatus for crystallizing a thin film material as claimed in claim 1, wherein the chamber is made of a quartz tube or a sapphire tube.
8. The high temperature atomic layer deposition apparatus according to claim 1, wherein a heating temperature of the muffle is 25 to 1200 ℃.
9. A method of high temperature atomic layer deposition, the method comprising:
placing a silicon wafer in a chamber, wherein the surface of the silicon wafer is consistent with the flow direction of a first precursor and the flow direction of a second precursor;
starting a vacuum pump and a muffle furnace, and heating the cavity to a first temperature by using the muffle furnace;
detecting the air pressure in the chamber in real time according to a vacuum gauge, and alternately introducing the first precursor or the second precursor into the chamber through a first pipeline and a second pipeline when the air pressure in the chamber reaches a preset threshold value;
and heating the first precursor and the second precursor in the chamber to a second temperature according to the muffle furnace, and obtaining a thin film material through atomic layer deposition.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911136184.3A CN112899653A (en) | 2019-11-19 | 2019-11-19 | High-temperature atomic layer deposition device and method |
| PCT/CN2019/121707 WO2021097893A1 (en) | 2019-11-19 | 2019-11-28 | Atomic layer deposition device and method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911136184.3A CN112899653A (en) | 2019-11-19 | 2019-11-19 | High-temperature atomic layer deposition device and method |
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| CN112899653A true CN112899653A (en) | 2021-06-04 |
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| CN201911136184.3A Pending CN112899653A (en) | 2019-11-19 | 2019-11-19 | High-temperature atomic layer deposition device and method |
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| WO (1) | WO2021097893A1 (en) |
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| CN105239056A (en) * | 2015-10-27 | 2016-01-13 | 上海集成电路研发中心有限公司 | Atomic layer deposition device and method |
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| CN108300980A (en) * | 2018-01-11 | 2018-07-20 | 中国科学院微电子研究所 | A kind of X-ray zone plate preparation system |
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| CN109609930A (en) * | 2018-12-11 | 2019-04-12 | 北京北方华创微电子装备有限公司 | Atomic layer deposition apparatus and its cleaning method |
| CN110230041A (en) * | 2018-03-05 | 2019-09-13 | 北京北方华创微电子装备有限公司 | A kind of atomic layer deposition apparatus and method |
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2019
- 2019-11-19 CN CN201911136184.3A patent/CN112899653A/en active Pending
- 2019-11-28 WO PCT/CN2019/121707 patent/WO2021097893A1/en active Application Filing
Patent Citations (8)
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| CN105239056A (en) * | 2015-10-27 | 2016-01-13 | 上海集成电路研发中心有限公司 | Atomic layer deposition device and method |
| JP2017190492A (en) * | 2016-04-13 | 2017-10-19 | 株式会社デンソー | Gas supply device |
| CN107868944A (en) * | 2017-10-31 | 2018-04-03 | 北京北方华创微电子装备有限公司 | A kind of titanium nitride apparatus for atomic layer deposition and its deposition process |
| CN108300980A (en) * | 2018-01-11 | 2018-07-20 | 中国科学院微电子研究所 | A kind of X-ray zone plate preparation system |
| CN110230041A (en) * | 2018-03-05 | 2019-09-13 | 北京北方华创微电子装备有限公司 | A kind of atomic layer deposition apparatus and method |
| CN110396676A (en) * | 2018-04-24 | 2019-11-01 | 北京北方华创微电子装备有限公司 | A kind of atomic layer deposition apparatus and method |
| CN109609930A (en) * | 2018-12-11 | 2019-04-12 | 北京北方华创微电子装备有限公司 | Atomic layer deposition apparatus and its cleaning method |
| CN109609931A (en) * | 2018-12-27 | 2019-04-12 | 北京北方华创微电子装备有限公司 | Apparatus for atomic layer deposition and method |
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| WO2021097893A1 (en) | 2021-05-27 |
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Application publication date: 20210604 |