JP3283459B2 - Substrate holding device for semiconductor processing - Google Patents

Substrate holding device for semiconductor processing

Info

Publication number
JP3283459B2
JP3283459B2 JP36370997A JP36370997A JP3283459B2 JP 3283459 B2 JP3283459 B2 JP 3283459B2 JP 36370997 A JP36370997 A JP 36370997A JP 36370997 A JP36370997 A JP 36370997A JP 3283459 B2 JP3283459 B2 JP 3283459B2
Authority
JP
Japan
Prior art keywords
mounting block
substrate holding
heating
holding device
heating block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP36370997A
Other languages
Japanese (ja)
Other versions
JPH11186175A (en
Inventor
清志 佐藤
三喜男 清水
年彦 花待
真也 宮地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NHK Spring Co Ltd
Original Assignee
NHK Spring Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NHK Spring Co Ltd filed Critical NHK Spring Co Ltd
Priority to JP36370997A priority Critical patent/JP3283459B2/en
Priority to US09/213,463 priority patent/US6159301A/en
Publication of JPH11186175A publication Critical patent/JPH11186175A/en
Application granted granted Critical
Publication of JP3283459B2 publication Critical patent/JP3283459B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は，半導体処理装置内
で半導体基板を保持するための基板保持装置に関し，特
にプラズマCVD装置内で基板を保持するサセプタの構造
に関する。The present invention relates to a substrate holding device for holding a semiconductor substrate in a semiconductor processing apparatus, and more particularly to a structure of a susceptor for holding a substrate in a plasma CVD apparatus.

【０００２】[0002]

【従来の技術】従来のプラズマCVD装置内で使用される
サセプタは，米国特許第5,039,388号に記載されている
ように，表面が陽極酸化処理されたアルミニウムまたは
アルミニウム合金製の電極から成る。これは，反応炉内
をフッ素原子を含んだガスを使ってプラズマエッチング
により清掃する際に，フッ素の活性種と反応し汚染物質
を生成しないように，サセプタにフッ素に対する耐性を
与えるためである。しかし，従来の陽極酸化処理された
サセプタ表面は400℃程度のプラズマ環境下でクラック
を発生する危険性があり，その結果割れ目にフッ素系活
性種が浸透しアルミニウムと反応して汚染物質が生成さ
れるという問題があった。2. Description of the Related Art A susceptor used in a conventional plasma CVD apparatus comprises an electrode made of aluminum or aluminum alloy whose surface is anodized as described in US Pat. No. 5,039,388. This is because when the inside of the reaction furnace is cleaned by plasma etching using a gas containing fluorine atoms, the susceptor is given a resistance to fluorine so as not to react with active species of fluorine and generate pollutants. However, there is a risk that cracks may occur in the conventional anodized susceptor surface in a plasma environment at about 400 ° C. As a result, fluorine-based active species penetrate into the cracks and react with aluminum to produce contaminants. Problem.

【０００３】これに対し，内部に高周波電極を埋設した
セラミック材料から成るサセプタが開発された。窒化ア
ルミニウムなどのセラミック材料がフッ素系活性種に対
する耐性を有しかつ熱伝導性に優れている点に着目した
ものである。しかし当初この種のサセプタでは，真空反
応室から隔離された部屋からのランプ輻射熱によりサセ
プタ上の半導体基板を加熱していたため熱効率が悪くプ
ロセス安定性にも問題があった。On the other hand, a susceptor made of a ceramic material having a high-frequency electrode embedded therein has been developed. The present invention focuses on the fact that ceramic materials such as aluminum nitride have resistance to fluorine-based active species and are excellent in thermal conductivity. However, this type of susceptor initially had a problem in heat stability and process stability because the semiconductor substrate on the susceptor was heated by lamp radiant heat from a room isolated from the vacuum reaction chamber.

【０００４】この種のサセプタとして次に登場したのが
窒化アルミニウム内部に電極及びヒータ線の両方を埋設
し，加熱部と載置部（電極部）を同一構造体として製造
したものである。このように一体化することで，上記の
ように間接的にではなく直接的に半導体基板を加熱する
ことができるため熱効率の問題も解消される。The next susceptor of this type is one in which both an electrode and a heater wire are buried inside aluminum nitride, and the heating section and the mounting section (electrode section) are manufactured with the same structure. With such integration, the problem of thermal efficiency can be solved because the semiconductor substrate can be directly heated instead of indirectly as described above.

【０００５】[0005]

【発明が解決しようとする課題】ところで，プラズマCV
D装置の反応室内部は上記のようにフッ素原子を含んだ
ガスを使ったプラズマエッチングにより清掃されるが，
シャワーヘッドなどセラミック材料で製造することが技
術的に困難な部分は従来通りのアルミニウム合金等で製
造されているため，フッ素活性種による腐食が発生して
汚染物質が生じる。この汚染物質は反応炉内壁上や，特
にサセプタ表面上に付着する。このように，せっかく反
応炉内部をプラズマエッチングにより清掃しても，サセ
プタ表面上に新たに汚染物質が付着してしまう。この汚
染物質を除去するには，定期的にサセプタを取り外して
清掃メンテナンスを行わなければならない。その場合に
おいてこのような一体型のサセプタを取り外して清掃す
るには非常に多くの作業時間が必要であるため，長時間
装置を停止させなければならない。その結果生産性の低
下につながるという問題が生じる。また，コスト的にも
同一構造体の窒化アルミニウム製サセプタ装置は非常に
高価である点も問題である。[Problems to be Solved by the Invention] By the way, plasma CV
The inside of the reaction chamber of the D apparatus is cleaned by plasma etching using a gas containing fluorine atoms as described above.
Since a portion that is technically difficult to manufacture with a ceramic material, such as a shower head, is manufactured with a conventional aluminum alloy or the like, corrosion due to fluorine active species occurs and contaminants are generated. This contaminant adheres to the inner wall of the reactor and particularly to the surface of the susceptor. As described above, even if the inside of the reaction furnace is cleaned by plasma etching, contaminants will newly adhere to the susceptor surface. To remove this contaminant, the susceptor must be removed and cleaning maintenance performed periodically. In that case, removing and cleaning such an integrated susceptor requires a great deal of work time, and the apparatus must be stopped for a long time. As a result, there is a problem that productivity is reduced. Another problem is that the aluminum nitride susceptor device having the same structure is very expensive in terms of cost.

【０００６】したがって，本発明の目的は，フッ素系活
性種に対する高い耐性を有し，不純物汚染の危険性がな
い基板保持装置を与えることである。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a substrate holding apparatus having high resistance to fluorine-based active species and having no risk of impurity contamination.

【０００７】また，本発明の他の目的は，交換または清
掃が容易に行える基板保持装置を与えること，またそれ
によって装置の生産性を向上させることである。It is another object of the present invention to provide a substrate holding device which can be easily replaced or cleaned, and thereby improve the productivity of the device.

【０００８】さらに，本発明の他の目的は，低コストな
基板保持装置を与え，装置の運用コストを低減させるこ
とである。It is another object of the present invention to provide a low-cost substrate holding apparatus and reduce the operation cost of the apparatus.

【０００９】[0009]

【課題を解決するための手段】上記目的を達成するため
に本発明に係る基板保持装置は以下の手段から成る。To achieve the above object, a substrate holding apparatus according to the present invention comprises the following means.

【００１０】半導体処理装置内で半導体基板を保持する
ための基板保持装置は，内部に高周波電極を埋設した，
前記半導体基板を載置するための載置面を有する載置ブ
ロックと，内部に発熱体を埋設した，前記半導体基板を
加熱するための加熱ブロックと,から成る。[0010] A substrate holding device for holding a semiconductor substrate in a semiconductor processing apparatus has a high-frequency electrode embedded therein.
The semiconductor device includes a mounting block having a mounting surface for mounting the semiconductor substrate thereon, and a heating block having a heating element embedded therein for heating the semiconductor substrate.

【００１１】ここで前記載置ブロックは，その底面が前
記加熱ブロックの表面と着脱自在に係合することによっ
て，前記加熱ブロックに密着されている。Here, the mounting block is closely attached to the heating block by a bottom surface of the mounting block being detachably engaged with a surface of the heating block.

【００１２】好適には，前記載置ブロックは窒化アルミ
ニウムから成り，前記加熱ブロックはアルミニウム合金
から成る。Preferably, the mounting block is made of aluminum nitride, and the heating block is made of an aluminum alloy.

【００１３】本発明に係る基板保持装置は，さらに前記
載置ブロックの底面を前記加熱ブロックの表面と着脱自
在に係合させるためのロック機構を有する。The substrate holding apparatus according to the present invention further has a lock mechanism for detachably engaging the bottom surface of the mounting block with the surface of the heating block.

【００１４】具体的には該ロック機構は，前記載置ブロ
ックの底面に設けられた少なくとも一つの突起部と，前
記加熱ブロックの表面に設けられた少なくとも一つの開
口部と，から成る。More specifically, the lock mechanism comprises at least one projection provided on the bottom surface of the mounting block and at least one opening provided on the surface of the heating block.

【００１５】また，前記突起部は具体的には導電性の弾
性部材から成る。[0015] Further, the protrusion is specifically made of a conductive elastic member.

【００１６】前記ロック機構はさらに前記突起部を固定
するための導体部材であって，前記高周波電極と前記弾
性部材とを電気的に連結させるための部材を含むことが
できる。[0016] The lock mechanism may further include a conductor member for fixing the protruding portion, the member for electrically connecting the high-frequency electrode and the elastic member.

【００１７】また，前記弾性部材は好適にはニッケル-
クローム系耐熱合金から成る。The elastic member is preferably made of nickel.
Made of chrome heat-resistant alloy.

【００１８】さらに，前記導体部材は鉄-ニッケル-コバ
ルト系低熱膨張合金，チタン，モリブデンまたは鉄-ニ
ッケル系合金から成る。Further, the conductor member is made of an iron-nickel-cobalt low thermal expansion alloy, titanium, molybdenum or an iron-nickel alloy.

【００１９】[0019]

【発明の実施の形態】以下，図面とともに本発明を説明
する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings.

【００２０】図１は，本発明に係る基板保持装置の好適
実施例の断面図を略示したものである。本発明に係る基
板保持装置は，内部に高周波電極3を埋設した半導体基
板を載置するための載置面5を有する載置ブロック1と，
内部に発熱体7を埋設した半導体基板を加熱するための
加熱ブロック2から成る。載置ブロック1は好適には窒化
アルミニウムから成る直径230mm〜350mm，厚さ3mm〜9mm
の円板体であり，加熱ブロック2は好適にはアルミニウ
ム合金から成る直径230mm〜350mm，厚さ20mm〜100mmの
円柱体である。以下で詳細に説明するように，載置ブロ
ック1は加熱ブロック2とロック機構10によって着脱自在
に係合している。加熱ブロック2の内部には半導体基板
のプロセス温度をモニターするための温度センサ8が設
けられている。温度センサ8は好適には白金-白金ロジウ
ム熱電対である。温度センサ8でモニターした温度がPID
温度制御器12に伝達され，該PID温度制御器12によって
発熱体7の電力が制御される。ここで発熱体7は好適には
ニクロム線を内部に有するシースヒータを加熱ブロック
内に埋設したものであるが，これ以外の発熱抵抗体を使
用することもできる。高周波電極3は好適には厚さ0.1mm
の円板状のモリブデン箔から成るが，他に網状のモリブ
デン網またはタングステン網であってもよい。また該高
周波電極3はロック機構10を通じて加熱ブロック2と電気
的に接続されており，加熱ブロック2はアース11されて
いる。FIG. 1 is a schematic sectional view of a preferred embodiment of the substrate holding apparatus according to the present invention. The substrate holding device according to the present invention comprises: a mounting block 1 having a mounting surface 5 for mounting a semiconductor substrate having a high-frequency electrode 3 embedded therein;
It comprises a heating block 2 for heating a semiconductor substrate having a heating element 7 embedded therein. The mounting block 1 is preferably made of aluminum nitride and has a diameter of 230 mm to 350 mm and a thickness of 3 mm to 9 mm.
The heating block 2 is preferably a cylindrical body made of an aluminum alloy and having a diameter of 230 mm to 350 mm and a thickness of 20 mm to 100 mm. As will be described in detail below, the mounting block 1 is detachably engaged with the heating block 2 by the lock mechanism 10. Inside the heating block 2, a temperature sensor 8 for monitoring a process temperature of the semiconductor substrate is provided. Temperature sensor 8 is preferably a platinum-platinum rhodium thermocouple. Temperature monitored by temperature sensor 8 is PID
The power is transmitted to the temperature controller 12, and the power of the heating element 7 is controlled by the PID temperature controller 12. Here, the heating element 7 is preferably one in which a sheath heater having a nichrome wire inside is buried in the heating block, but other heating resistors may be used. The high frequency electrode 3 is preferably 0.1 mm thick
, But it may be a net-like molybdenum net or a tungsten net. The high-frequency electrode 3 is electrically connected to the heating block 2 through a lock mechanism 10, and the heating block 2 is grounded.

【００２１】図２は，本発明に係る基板保持装置の載置
ブロック1の底面9を示したものである。底面9には，ロ
ック機構10の一部をなす３つの金属製の突起部6が等間
隔に設置されている。突起部6は好適には３カ所設置さ
れるが，それ以上でも以下でもよい。また，突起部6は
好適には長方形の板状金属片であるが，これ以外にも円
形，三角形，半球形などあらゆる形状が可能である。突
起部6は，好適にはニッケル-クローム系耐熱合金から成
るインコネル製の板バネであるが，他の耐熱性及び耐食
性に優れた弾性部材であってもよい。突起部6はボルト1
3によって金属製の導体部材4に固定され，導体部材4は
載置ブロック1に埋設された高周波電極3に電気的に接続
されている。ボルト13は好適にはニッケル-クローム系
耐熱合金から成るが，他の耐熱性及び耐食性に優れた弾
性部材であってもよい。また導体部材4は好適にはFe-Ni
-Co系低熱膨張合金から成るが，他にチタンまたはFe-Ni
系合金などの耐食性に優れた低熱膨張合金でもよい。底
面9の中心には位置合わせ用のピンを通すための非貫通
孔20が設けられている。またその周囲には半導体基板を
ピックアップする際に基板を持ち上げるためのホールド
ロッド用の貫通孔19が３つ等間隔に配設されている。FIG. 2 shows the bottom surface 9 of the mounting block 1 of the substrate holding device according to the present invention. On the bottom surface 9, three metal protrusions 6 forming a part of the lock mechanism 10 are installed at equal intervals. Protrusions 6 are preferably provided at three locations, but may be more or less. In addition, the protrusion 6 is preferably a rectangular plate-shaped metal piece, but other shapes such as a circle, a triangle, and a hemisphere can be used. The protrusion 6 is preferably a plate spring made of Inconel made of a nickel-chrome heat-resistant alloy, but may be another elastic member having excellent heat resistance and corrosion resistance. Projection 6 is bolt 1
The conductor member 4 is fixed to the metal conductor member 4 by 3, and the conductor member 4 is electrically connected to the high-frequency electrode 3 embedded in the mounting block 1. The bolt 13 is preferably made of a nickel-chrome heat-resistant alloy, but may be another elastic member having excellent heat resistance and corrosion resistance. The conductor member 4 is preferably made of Fe-Ni
-Co-based low thermal expansion alloy, other than titanium or Fe-Ni
A low thermal expansion alloy having excellent corrosion resistance, such as a base alloy, may be used. A non-through hole 20 for passing a positioning pin is provided at the center of the bottom surface 9. In addition, three through holes 19 for hold rods for lifting the semiconductor substrate when picking up the semiconductor substrate are provided around the periphery thereof at equal intervals.

【００２２】図３は，図２のA-A断面図を示したもので
ある。図１のロック機構10の一部をなす突起部6は，好
適には図示されるように薄い板状のインコネル製板バネ
から成る。突起部6は上端面14を有し，該上端面14が以
下に説明するように加熱ブロック表面16に設けられた開
口部17の内側端面15と弾力的に係合する。載置ブロック
1は高周波電極3を埋設し窒化アルミニウムで焼結するこ
とにより作成したものである。導体部材4は活性金属法
によって窒化アルミニウムに対し鑞付けされている。突
起部6は好適にはボルト13によって導体部材4に締め付け
られて固定されるが，他にボルト13を使用せずに直接導
体部材4に鑞付けされてもよい。FIG. 3 is a sectional view taken along the line AA of FIG. The projection 6 forming a part of the lock mechanism 10 of FIG. 1 is preferably formed of a thin plate-like Inconel leaf spring as shown in the figure. The projection 6 has an upper end surface 14 which resiliently engages an inner end surface 15 of an opening 17 provided in the heating block surface 16 as described below. Mounting block
Numeral 1 is formed by embedding the high-frequency electrode 3 and sintering it with aluminum nitride. The conductor member 4 is brazed to aluminum nitride by an active metal method. The protrusion 6 is preferably fastened and fixed to the conductor member 4 by a bolt 13, but may be brazed directly to the conductor member 4 without using the bolt 13.

【００２３】図４は，本発明に係る基板保持装置の加熱
ブロック2の平面図である。加熱ブロック2の表面16に
は，本発明に係るロック機構の一部をなす３つの開口部
17が等間隔に設けられている。この開口部17の間隔及び
穴の大きさは上記突起部6を受設できるように選択され
ている。また開口部17の形状はＬ字形であるが，これ以
外の形状であってもよい。すなわち，開口部17の形状，
数，大きさ及び間隔等は，上記突起部のそれらとぞれぞ
れ対応するように自由に選択可能である。表面16の中心
には位置合わせ用のピンを通すための非貫通孔20が設け
られている。またその周囲には半導体基板をピックアッ
プする際に基板を持ち上げるためのホールドロッド用の
貫通孔18が３つ等間隔に配設されている。FIG. 4 is a plan view of the heating block 2 of the substrate holding apparatus according to the present invention. The surface 16 of the heating block 2 has three openings which form part of the locking mechanism according to the invention.
17 are provided at equal intervals. The distance between the openings 17 and the size of the holes are selected so that the protrusions 6 can be received. Further, the shape of the opening 17 is L-shaped, but may be any other shape. That is, the shape of the opening 17,
The number, size, spacing, etc., can be freely selected so as to correspond to those of the above-mentioned projections. A non-through hole 20 is provided at the center of the surface 16 for passing an alignment pin. Also, three through-holes 18 for hold rods for lifting the semiconductor substrate when picking up the semiconductor substrate are arranged around the periphery thereof at equal intervals.

【００２４】図５は，図４のB-B断面図を示したもので
ある。加熱ブロック2は発熱体7及び温度センサ8を埋設
してアルミニウム合金で鋳造したものである。発熱体7
及び温度センサ8は好適にはステンレススチール製シー
スに内包されてアルミニウム合金内に埋設される。発熱
体7及び温度センサー8のシース材は好適には316Lステン
レススチールであるが，それ以外にインコネルなどのニ
ッケル系合金や耐食性に優れた素材であってもよい。ま
た鋳造用のアルミニウム合金はAC7A材が好適であるが，
これ以外の一般のアルミニウム合金鋳造材を使用しても
よい。加熱ブロック2の表面16に設けられた開口部17
は，好適には予め所定の形状に加工したアルミニウム合
金板を表面に鑞付けして作成するが，それ以外にアルミ
ニウム合金の表面16を直接加工して作成してもよい。開
口部17は好適には上記突起部6の上端面14と係合すると
ころの内側端面15を有する。載置ブロック1の上記突起
部6を加熱ブロック2の開口部17に挿着し回転させること
によって，突起部6の上端面14が当該内側端面15と弾力
的に係合し（図１参照）載置ブロック1を加熱ブロック2
へ容易に密着させることができる。また，載置ブロック
1を逆回転させることで載置ブロック1のみを容易に取り
外すことができる。FIG. 5 is a sectional view taken along the line BB of FIG. The heating block 2 is one in which a heating element 7 and a temperature sensor 8 are embedded and cast with an aluminum alloy. Heating element 7
The temperature sensor 8 is preferably enclosed in a stainless steel sheath and embedded in an aluminum alloy. The sheath material of the heating element 7 and the temperature sensor 8 is preferably 316L stainless steel, but may be a nickel-based alloy such as Inconel or a material having excellent corrosion resistance. Aluminum alloy for casting is preferably AC7A,
Other general aluminum alloy castings may be used. Opening 17 provided on surface 16 of heating block 2
Is preferably formed by brazing an aluminum alloy plate previously processed into a predetermined shape to the surface, but may be formed by directly processing the surface 16 of the aluminum alloy. The opening 17 preferably has an inner end face 15 which engages with the upper end face 14 of the projection 6. By inserting the projection 6 of the mounting block 1 into the opening 17 of the heating block 2 and rotating it, the upper end surface 14 of the projection 6 elastically engages with the inner end surface 15 (see FIG. 1). Mounting block 1 to heating block 2
Can be easily brought into close contact. The mounting block
By rotating 1 in reverse, only the mounting block 1 can be easily removed.

【００２５】次に，本発明の特徴のひとつであるロック
機構10について説明する。本発明に係るロック機構10は
載置ブロック1の底面9に設けられた少なくとも一つの突
起部6及び加熱ブロック2の表面16に設けられた少なくと
も一つの開口部17から成る。該突起部6は好適にはNi-Cr
系耐熱合金のインコネル製板バネから成り，好適にはFe
-Ni-Co系低熱膨張合金製の導体部材4を介して，高周波
電極3と電気的に接続されている。図１は載置ブロック1
が加熱ブロック2に密着された状態を示している。上記
したように，載置ブロック1の密着は，突起部6を開口部
17に挿入し回転させて，突起部6の上端面14を開口部17
の内部端面15に弾力的に係合させることによって容易に
達成することができる。Next, the lock mechanism 10, which is one of the features of the present invention, will be described. The lock mechanism 10 according to the present invention includes at least one protrusion 6 provided on the bottom surface 9 of the mounting block 1 and at least one opening 17 provided on the surface 16 of the heating block 2. The protrusion 6 is preferably made of Ni-Cr
Made of a heat-resistant alloy made of Inconel and preferably made of Fe
It is electrically connected to the high-frequency electrode 3 via a conductor member 4 made of a -Ni-Co-based low thermal expansion alloy. Figure 1 shows the mounting block 1
Indicates a state in which the heating block 2 is in close contact with the heating block 2. As described above, when the mounting block 1 is in close contact,
17 and rotate it so that the upper end surface 14 of the projection 6
Can be easily achieved by resiliently engaging the inner end face 15 of the nosepiece.

【００２６】このように載置ブロック1と加熱ブロック2
を弾力的に係合させることには以下のような利点があ
る。載置ブロック1の材料である窒化アルミニウムと加
熱ブロック2の材料であるアルミニウム合金の熱膨張係
数を比較すると，それぞれ4.9×10-6/K及び23×10-6/K
であって，アルミニウム合金の方がはるかに熱膨張しや
すい性質を有する。両者をボルト等で完全に固定してし
まうと膨張率の違いによって大きな歪みが生じ，両者の
接触面に空隙が発生したり，窒化アルミニウム側にクラ
ックが発生する危険性がある。そこで，本発明に係る弾
力的係合のロック機構によれば，膨張及び収縮により寸
法が変化しても，垂直方向への移動はバネの力で押しつ
けられているため両者間に空隙が生じることはなく，ま
た水平方向へ移動は開口部17の内側面と突起部6の間の
マージンによって幾分吸収されまたバネによって制限さ
れる。このように本発明に係るロック機構によれば室温
から450℃の温度領域内で，載置ブロック1及び加熱ブロ
ック2の間の良好な密着を維持することができる。Thus, the mounting block 1 and the heating block 2
The following advantages are obtained by elastically engaging the. A comparison of the thermal expansion coefficients of aluminum nitride, which is the material of the mounting block 1, and aluminum alloy, which is the material of the heating block 2, shows 4.9 × 10 -6 / K and 23 × 10 -6 / K, respectively.
However, the aluminum alloy has a property that thermal expansion is much easier. If both are completely fixed with bolts or the like, a large distortion is caused due to a difference in expansion coefficient, and there is a risk that a void may be generated on the contact surface between the two and a crack may be generated on the aluminum nitride side. Therefore, according to the lock mechanism of the elastic engagement according to the present invention, even if the dimensions change due to expansion and contraction, the vertical movement is pressed by the force of the spring, so that a gap is generated between the two. And the horizontal movement is somewhat absorbed by the margin between the inner surface of the opening 17 and the projection 6, and is limited by the spring. As described above, according to the lock mechanism of the present invention, good adhesion between the mounting block 1 and the heating block 2 can be maintained in a temperature range from room temperature to 450 ° C.

【００２７】[0027]

【発明の効果】半導体基板を載置する面を窒化アルミニ
ウムで製造することによって，フッ素系活性種に対して
高い耐性を有するサセプタを与えることができ，その結
果不純物汚染の危険性が激減した。By manufacturing the surface on which the semiconductor substrate is mounted with aluminum nitride, a susceptor having high resistance to fluorine-based active species can be provided, and as a result, the risk of impurity contamination has been drastically reduced.

【００２８】また，基板保持装置を載置ブロックと加熱
ブロックのセパレート構造とし両者が容易に脱着可能な
機構を設けたことによって，載置ブロックのみを取り外
して，メンテナンスを行うことができるようになり，作
業時間を大幅に短縮することができた。その結果メンテ
ナンスによる装置停止時間を最小限とし生産性を向上さ
せることができた。In addition, since the substrate holding device has a separate structure of the mounting block and the heating block and is provided with a mechanism capable of easily attaching and detaching the both, maintenance can be performed by removing only the mounting block. ， Working time was greatly reduced. As a result, the apparatus downtime due to maintenance was minimized, and productivity was improved.

【００２９】さらに，載置ブロック及び加熱ブロックを
完全に密着できたため，処理中のプロセス温度の安定性
を維持することができた。Further, since the mounting block and the heating block could be completely adhered, the stability of the process temperature during the processing could be maintained.

【００３０】さらにまた，載置ブロックのみを窒化アル
ミニウム製とし，加熱ブロックをアルミニウム合金製と
したことにより装置の製造コストを大幅に削減すること
ができた。Further, the manufacturing cost of the apparatus can be greatly reduced by using only the mounting block made of aluminum nitride and the heating block made of aluminum alloy.

【図面の簡単な説明】[Brief description of the drawings]

【図１】図１は本発明の基板保持装置の好適実施例の断
面図である。FIG. 1 is a sectional view of a preferred embodiment of a substrate holding apparatus according to the present invention.

【図２】図２は図１の基板保持装置の載置ブロックの底
面を図示したものである。FIG. 2 illustrates a bottom surface of a mounting block of the substrate holding device of FIG. 1;

【図３】図３は図２のA-A断面図である。FIG. 3 is a sectional view taken along line AA of FIG. 2;

【図４】図４は図１の基板保持装置の加熱ブロックの表
面を図示したものである。FIG. 4 illustrates a surface of a heating block of the substrate holding device of FIG. 1;

【図５】図５は図４のB-B断面図である。FIG. 5 is a sectional view taken along the line BB of FIG. 4;

【符号の説明】[Explanation of symbols]

1 載置ブロック 2 加熱ブロック 3 高周波電極 4 導体部材 5 載置面 6 突起部 7 発熱体 8 温度センサ 9 底面 10 ロック機構 11 アース 12 PID温度制御器 13 ボルト 14 上端面 15 内部端面 16 表面 17 開口部 18 貫通孔 19 貫通孔 20 非貫通孔 1 Mounting block 2 Heating block 3 High-frequency electrode 4 Conductor member 5 Mounting surface 6 Projection 7 Heating element 8 Temperature sensor 9 Bottom 10 Lock mechanism 11 Ground 12 PID temperature controller 13 Bolt 14 Top surface 15 Internal end surface 16 Surface 17 Opening Part 18 Through hole 19 Through hole 20 Non-through hole

───────────────────────────────────────────────────── フロントページの続き (72)発明者 宮地 真也 神奈川県横浜市金沢区福浦３丁目10番地 (56)参考文献 特開 平９−36213（ＪＰ，Ａ) 特開 平９−8114（ＪＰ，Ａ) 特開 平９−129560（ＪＰ，Ａ) 特開 平７−86381（ＪＰ，Ａ) 特開 平７−74234（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/205 C23C 16/46 H01L 21/68 ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Shinya Miyaji 3-10, Fukuura, Kanazawa-ku, Yokohama-shi, Kanagawa Prefecture (56) References JP-A-9-36213 (JP, A) JP-A-9-8114 (JP, A) JP-A-9-129560 (JP, A) JP-A-7-86381 (JP, A) JP-A-7-74234 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) ) H01L 21/205 C23C 16/46 H01L 21/68

Claims (5)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】半導体処理装置内で半導体基板を保持する
ための基板保持装置であって、内部に高周波電極を埋設
した、前記半導体基板を載置するための載置面を有する
載置ブロックと、内部に発熱体を埋設した、前記半導体
基板を加熱するための加熱ブロックとから成り、前記載
置ブロック及び前記加熱ブロックはロック機構によって
着脱自在に密着係合し、前記ロック機構は、前記載置ブ
ロックの底面に固定された少なくともひとつの弾性部材
から成る突起部と、前記加熱ブロックの表面に設けられ
た前記突起部と嵌合しその後前記突起部の回転方向への
移動を許す少なくともひとつの開口部とから成り、前記
突起部が前記開口部と嵌合するように前記載置ブロック
及び前記加熱ブロックを重ね合わせ、その後前記加熱ブ
ロックに関して前記載置ブロックを回転させることによ
って前記突起部が前記開口部内を回転方向に移動し、前
記突起部の上端面が前記開口部の内側端面と弾力的に係
合することによって、前記載置ブロックが前記加熱ブロ
ックに着脱自在に密着されることを特徴とする装置。 1. A substrate holding device for holding a semiconductor substrate in a semiconductor processing apparatus, comprising: a mounting block having a high-frequency electrode embedded therein and having a mounting surface on which the semiconductor substrate is mounted. was buried inside the heating element consists of a heating block for heating the semiconductor substrate before described
The mounting block and the heating block are locked by a lock mechanism.
The lock mechanism detachably engages closely, and the lock mechanism
At least one elastic member fixed to the bottom of the lock
And a protrusion provided on the surface of the heating block.
And then the projection is rotated in the rotation direction.
At least one opening allowing movement,
The mounting block as described above, wherein the projection is fitted with the opening.
And the heating block are overlapped, and then the heating block is
By rotating the mounting block described above with respect to the lock
As a result, the protrusion moves in the rotation direction in the opening,
The upper end surface of the projection elastically engages with the inner end surface of the opening.
By the combination, the mounting block described above is
A device that is detachably attached to a rack. 【請求項２】請求項１に記載の基板保持装置であって、
前記載置ブロックは窒化アルミニウムから成り、前記加
熱ブロックはアルミニウム合金から成る、ところの装
置。2. The substrate holding device according to claim 1, wherein
The apparatus of any preceding claim, wherein the mounting block comprises aluminum nitride and the heating block comprises an aluminum alloy. 【請求項３】請求項１に記載の基板保持装置であって、
前記ロック機構はさらに前記突起部を固定するための導
体部材であって、前記高周波電極と前記弾性部材とを電
気的に連結させるための導体部材を含む、ところの装
置。3. The substrate holding device according to claim 1, wherein
The device wherein the lock mechanism further includes a conductor member for fixing the protrusion, and a conductor member for electrically connecting the high-frequency electrode and the elastic member. 【請求項４】請求項１に記載の基板保持装置であって、
前記弾性部材は、ニッケル-クローム系耐熱合金から成
る、ところの装置。4. The substrate holding device according to claim 1, wherein:
The above-mentioned device, wherein the elastic member is made of a nickel-chrome heat-resistant alloy. 【請求項５】請求項３に記載の基板保持装置であって、
前記導体部材は、鉄-ニッケル-コバルト系低熱膨張合
金、チタン、モリブデンまたは鉄-ニッケル系合金から
成る、ところの装置。5. The substrate holding device according to claim 3, wherein:
The apparatus according to claim 1, wherein the conductor member is made of an iron-nickel-cobalt low thermal expansion alloy, titanium, molybdenum, or an iron-nickel alloy.
JP36370997A 1997-12-17 1997-12-17 Substrate holding device for semiconductor processing Expired - Fee Related JP3283459B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP36370997A JP3283459B2 (en) 1997-12-17 1997-12-17 Substrate holding device for semiconductor processing
US09/213,463 US6159301A (en) 1997-12-17 1998-12-17 Substrate holding apparatus for processing semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36370997A JP3283459B2 (en) 1997-12-17 1997-12-17 Substrate holding device for semiconductor processing

Publications (2)

Publication Number Publication Date
JPH11186175A JPH11186175A (en) 1999-07-09
JP3283459B2 true JP3283459B2 (en) 2002-05-20

Family

ID=18479995

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36370997A Expired - Fee Related JP3283459B2 (en) 1997-12-17 1997-12-17 Substrate holding device for semiconductor processing

Country Status (2)

Country Link
US (1) US6159301A (en)
JP (1) JP3283459B2 (en)

Families Citing this family (181)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW488010B (en) * 2000-02-04 2002-05-21 Kobe Steel Ltd Chamber member made of aluminum alloy and heater block
US20040221959A1 (en) * 2003-05-09 2004-11-11 Applied Materials, Inc. Anodized substrate support
US8372205B2 (en) * 2003-05-09 2013-02-12 Applied Materials, Inc. Reducing electrostatic charge by roughening the susceptor
US6946733B2 (en) * 2003-08-13 2005-09-20 Cts Corporation Ball grid array package having testing capability after mounting
US20070037408A1 (en) * 2005-08-10 2007-02-15 Hitachi Metals, Ltd. Method and apparatus for plasma processing
US8173228B2 (en) * 2006-01-27 2012-05-08 Applied Materials, Inc. Particle reduction on surfaces of chemical vapor deposition processing apparatus
US20080131622A1 (en) * 2006-12-01 2008-06-05 White John M Plasma reactor substrate mounting surface texturing
TWI417984B (en) * 2009-12-10 2013-12-01 Orbotech Lt Solar Llc Auto-sequencing multi-directional inline processing apparatus
JP5416570B2 (en) * 2009-12-15 2014-02-12 住友電気工業株式会社 Heating / cooling device and apparatus equipped with the same
US8459276B2 (en) 2011-05-24 2013-06-11 Orbotech LT Solar, LLC. Broken wafer recovery system
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (en) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Gas supply unit and substrate processing apparatus including the same
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
KR20190009245A (en) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. Methods for forming a semiconductor device structure and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
CN111344522B (en) 2017-11-27 2022-04-12 阿斯莫Ip控股公司 Including clean mini-environment device
KR102597978B1 (en) 2017-11-27 2023-11-06 에이에스엠 아이피 홀딩 비.브이. Storage device for storing wafer cassettes for use with batch furnaces
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
KR20200108016A (en) 2018-01-19 2020-09-16 에이에스엠 아이피 홀딩 비.브이. Method of depositing a gap fill layer by plasma assisted deposition
TW202325889A (en) 2018-01-19 2023-07-01 荷蘭商Ａｓｍ 智慧財產控股公司 Deposition method
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
CN111699278B (en) 2018-02-14 2023-05-16 Asm Ip私人控股有限公司 Method for depositing ruthenium-containing films on substrates by cyclical deposition processes
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
KR102636427B1 (en) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. Substrate processing method and apparatus
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
KR102646467B1 (en) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
KR102596988B1 (en) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. Method of processing a substrate and a device manufactured by the same
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
KR102568797B1 (en) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing system
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
TWI815915B (en) 2018-06-27 2023-09-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
CN112292478A (en) 2018-06-27 2021-01-29 Asm Ip私人控股有限公司 Cyclic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR20200030162A (en) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. Method for deposition of a thin film
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
CN110970344A (en) 2018-10-01 2020-04-07 Asm Ip控股有限公司 Substrate holding apparatus, system including the same, and method of using the same
US20200109484A1 (en) * 2018-10-03 2020-04-09 Asm Ip Holding B.V. Susceptor and susceptor coating method
KR102592699B1 (en) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same
KR102546322B1 (en) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus and substrate processing method
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (en) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. Substrate support unit and substrate processing apparatus including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
KR102636428B1 (en) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. A method for cleaning a substrate processing apparatus
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
TW202037745A (en) 2018-12-14 2020-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming device structure, structure formed by the method and system for performing the method
TW202405220A (en) 2019-01-17 2024-02-01 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
KR20200102357A (en) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for plug fill deposition in 3-d nand applications
CN111593319B (en) 2019-02-20 2023-05-30 Asm Ip私人控股有限公司 Cyclical deposition method and apparatus for filling recesses formed in a substrate surface
JP2020136678A (en) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー Method for filing concave part formed inside front surface of base material, and device
JP2020133004A (en) 2019-02-22 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー Base material processing apparatus and method for processing base material
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200108242A (en) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer
JP2020167398A (en) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー Door opener and substrate processing apparatus provided therewith
KR20200116855A (en) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. Method of manufacturing semiconductor device
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (en) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. Gas-phase reactor system and method of using same
KR20200130121A (en) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. Chemical source vessel with dip tube
KR20200130652A (en) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. Method of depositing material onto a surface and structure formed according to the method
JP2020188254A (en) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． Wafer boat handling device, vertical batch furnace, and method
JP2020188255A (en) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． Wafer boat handling device, vertical batch furnace, and method
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
KR20200141002A (en) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. Method of using a gas-phase reactor system including analyzing exhausted gas
KR20200143254A (en) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method
KR20210005515A (en) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. Temperature control assembly for substrate processing apparatus and method of using same
JP7499079B2 (en) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー Plasma device using coaxial waveguide and substrate processing method
CN112216646A (en) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 Substrate supporting assembly and substrate processing device comprising same
KR20210010307A (en) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR20210010820A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Methods of forming silicon germanium structures
KR20210010816A (en) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. Radical assist ignition plasma system and method
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
TW202113936A (en) 2019-07-29 2021-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
CN112309899A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112309900A (en) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 Substrate processing apparatus
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (en) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 Liquid level sensor for chemical source container
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (en) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． Production apparatus of mixed gas of film deposition raw material and film deposition apparatus
KR20210024423A (en) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. Method for forming a structure with a hole
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (en) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. Methods for selective deposition using a sacrificial capping layer
KR20210029663A (en) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (en) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process
KR20210042810A (en) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. Reactor system including a gas distribution assembly for use with activated species and method of using same
CN112635282A (en) 2019-10-08 2021-04-09 Asm Ip私人控股有限公司 Substrate processing apparatus having connection plate and substrate processing method
KR20210043460A (en) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. Method of forming a photoresist underlayer and structure including same
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (en) 2019-10-16 2024-03-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of topology-selective film formation of silicon oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (en) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. Apparatus and methods for selectively etching films
KR20210050453A (en) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (en) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (en) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11450529B2 (en) 2019-11-26 2022-09-20 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
CN112951697A (en) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112885692A (en) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 Substrate processing apparatus
CN112885693A (en) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 Substrate processing apparatus
JP2021090042A (en) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． Substrate processing apparatus and substrate processing method
KR20210070898A (en) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
KR20210080214A (en) 2019-12-19 2021-06-30 에이에스엠 아이피 홀딩 비.브이. Methods for filling a gap feature on a substrate and related semiconductor structures
TW202140135A (en) 2020-01-06 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Gas supply assembly and valve plate assembly
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
TW202129068A (en) 2020-01-20 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 Method of forming thin film and method of modifying surface of thin film
TW202130846A (en) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming structures including a vanadium or indium layer
TW202146882A (en) 2020-02-04 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of verifying an article, apparatus for verifying an article, and system for verifying a reaction chamber
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
TW202146715A (en) 2020-02-17 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for growing phosphorous-doped silicon layer and system of the same
TW202203344A (en) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 System dedicated for parts cleaning
KR20210116240A (en) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. Substrate handling device with adjustable joints
KR20210116249A (en) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. lockout tagout assembly and system and method of using same
CN113394086A (en) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 Method for producing a layer structure having a target topological profile
KR20210124042A (en) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. Thin film forming method
TW202146689A (en) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 Method for forming barrier layer and method for manufacturing semiconductor device
TW202145344A (en) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Apparatus and methods for selectively etching silcon oxide films
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
TW202140831A (en) 2020-04-24 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of forming vanadium nitride–containing layer and structure comprising the same
TW202146831A (en) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Vertical batch furnace assembly, and method for cooling vertical batch furnace
KR20210132600A (en) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
KR20210134226A (en) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. Solid source precursor vessel
KR20210134869A (en) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Fast FOUP swapping with a FOUP handler
KR20210141379A (en) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. Laser alignment fixture for a reactor system
KR20210143653A (en) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. Substrate processing apparatus
KR20210145078A (en) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. Structures including multiple carbon layers and methods of forming and using same
KR20210145080A (en) 2020-05-22 2021-12-01 에이에스엠 아이피 홀딩 비.브이. Apparatus for depositing thin films using hydrogen peroxide
TW202201602A (en) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing device
TW202218133A (en) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming a layer provided with silicon
TW202217953A (en) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Substrate processing method
KR20220006455A (en) 2020-07-08 2022-01-17 에이에스엠 아이피 홀딩 비.브이. Method for processing a substrate
KR20220010438A (en) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. Structures and methods for use in photolithography
TW202204662A (en) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method and system for depositing molybdenum layers
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
TW202229613A (en) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of depositing material on stepped structure
TW202217037A (en) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method of depositing vanadium metal, structure, device and a deposition assembly
TW202223136A (en) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Method for forming layer on substrate, and semiconductor processing system
KR20220076343A (en) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. an injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (en) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62134924A (en) * 1985-12-09 1987-06-18 Fujitsu Ltd Holder for substrate heating
JPH06132221A (en) * 1992-10-16 1994-05-13 Fujitsu Ltd Substrate holder for molecular beam crystal growth
KR100290748B1 (en) * 1993-01-29 2001-06-01 히가시 데쓰로 Plasma processing apparatus
JPH09213781A (en) * 1996-02-01 1997-08-15 Tokyo Electron Ltd Stage structure and processor using it
JP3310171B2 (en) * 1996-07-17 2002-07-29 松下電器産業株式会社 Plasma processing equipment

Also Published As

Publication number Publication date
JPH11186175A (en) 1999-07-09
US6159301A (en) 2000-12-12

Similar Documents

Publication Publication Date Title
JP3283459B2 (en) Substrate holding device for semiconductor processing
JP2807219B2 (en) Susceptor for semiconductor wafer support
EP0493089B1 (en) Wafer heating apparatus and method for producing the same
EP0628989B1 (en) Sealing device and method useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential
JP4729160B2 (en) Device to prevent edge accumulation
US5074017A (en) Susceptor
JP4209057B2 (en) Ceramic heater, substrate processing apparatus and substrate processing method using the same
KR100274768B1 (en) Wafer spacing mask for a substrate support chuck and method of fabricating same
EP0964433A2 (en) Multiple-layered ceramic heater
US6223447B1 (en) Fastening device for a purge ring
JP2005166354A (en) Ceramic heater
JPH07153706A (en) Suscepter device
JP2004006242A (en) Ceramic heater
JP2001168104A (en) Ceramics heater jig
JP3758009B2 (en) Substrate holding device for semiconductor processing
JP3810216B2 (en) Sample heating apparatus, processing apparatus, and sample processing method using the same
JP3181364B2 (en) Plasma processing equipment
JP3170248B2 (en) Semiconductor substrate holding device
JP3207147B2 (en) Substrate holding device for semiconductor processing
JP4539035B2 (en) HOLDER FOR SEMICONDUCTOR OR LIQUID CRYSTAL MANUFACTURING DEVICE AND SEMICONDUCTOR OR LIQUID CRYSTAL MANUFACTURING DEVICE WITH THE SAME
JP3657090B2 (en) Heating body and semiconductor manufacturing apparatus using the same
JPH0774451B2 (en) Film forming equipment
US6759624B2 (en) Method and apparatus for heating a semiconductor wafer plasma reactor vacuum chamber
JPH0628258B2 (en) Semiconductor wafer heating device and manufacturing method thereof
JP2875095B2 (en) Heating equipment

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080301

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090301

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090301

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100301

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100301

Year of fee payment: 8

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100301

Year of fee payment: 8

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees