JPH07153706A - Suscepter device - Google Patents

Abstract

PURPOSE: To provide a suscepter for a vapor-phase epitaxy device with superior durability against a fluorine system plasma, and a protecting structure for a wiring. CONSTITUTION: In a suscepter device provided in a vapor-phase epitaxy reaction chamber, a suscepter block 11 on which a wafer is placed is made of aluminum nitride, and a high-frequency electrode 12 and a metallic heater 13 are embedded inside, and at least a sidewall is constituted of ceramic. Then, this device is provided with a supporting stand 2 for supporting the suscepter block 11 at an opening edge from the back face, and a gas-supplying tube, mass flow controller 32, and gas cylinder for pouring inert gas into the supporting stand 2 with a pressure higher than the air pressure of gas in the surrounding of the supporting stand 2. A wiring 12a for a high-frequency electrode and wirings 13a and 13b for a metallic heater pulled out of the back face of the suscepter block 11 are derived through the sprouting stand 2 to the outside.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a susceptor device used in a CVD (Chemical Vapor Deposition) device, and more particularly to a device for performing a plasma reaction in a reaction chamber.

[0002]

2. Description of the Related Art The following conditions are required for a resistance heating susceptor block used in a vapor phase growth apparatus.

First, the material used for the resistance heating susceptor block has high thermal conductivity and is free from deterioration and deformation of the material at high temperatures. Then, in-situ chamber cleaning (in-
If in situ chamber cleaning is required, the material must be highly plasma resistant. Also in this case,
The resistance heating susceptor block is required to have a function as an electrode for performing a plasma reaction. Further, high purity is also important to prevent contamination of impurities.

Therefore, conventionally, a metal material having high thermal conductivity and electrical conductivity has been used as the material of the resistance heating susceptor block. In particular, considering fluorine plasma resistance, etc., conventionally, Monel and Hastelloy (Hasloy), which have relatively excellent fluorine plasma resistance compared to other metal materials, have been used.
Nickel alloys such as telloy have been used. For the same reason, ceramic materials such as SiC and graphite are widely used in addition to metal materials.

However, even a susceptor block using a metal material such as Monel or Hastelloy or a ceramic material such as SiC or graphite is not always sufficient in corrosion resistance to fluorine-based plasma, and corrosion resistance is increased. It was necessary to cover the surface with a protective film or the like for protection.

Although various devices such as a heating resistor and a susceptor plate may be provided inside the resistance heating susceptor block, wiring for connecting these devices to an external power source. As for the above, it is necessary to consider the corrosion effect of the fluorine-based plasma. Therefore, it is required that a material excellent in fluorine plasma resistance is used for a cover, a container and the like that protect these wirings.

[0007]

However, when metallic materials are used, these metallic materials may undergo plastic deformation in response to a rapid temperature change, so that the thermal expansion of the protective film and the metallic material may occur. There is a problem that the protective film peels off due to the difference in the coefficient.

Further, although plastic deformation is unlikely to occur when a ceramic material such as SiC or graphite is used, when frequent plasma cleaning is performed,
There is a problem that the protective film is peeled off.

Therefore, the susceptor block made of a metal material or a ceramic material has a problem in durability and lacks long-term reliability.

Further, even with a ceramic member having excellent resistance to fluorine-based plasma, it has hitherto been impossible to use the ceramic member as a cover or a container for protecting the wiring inside the apparatus from fluorine gas. This is because it is difficult to bring the ceramic members into close contact with each other, and the fluorine gas flows into the inside through the joints of the members.

Further, the temperature of the susceptor wafer surface plate is required to be controlled and maintained within process limits as much as possible. The components used for the susceptor wafer support plate generally conduct thermal energy away from the wafer support surface, which makes a difference at various temperatures that exceed process limits.

Therefore, an object of the present invention is to provide a susceptor device for a vapor phase growth apparatus which solves the above problems.

[0013]

In order to solve the above problems, the present invention uses aluminum nitride as a material for a susceptor block on which a wafer is placed in a susceptor device provided in a reaction chamber for vapor phase growth. I am using
A high frequency electrode and a metal heater are embedded inside the susceptor block.

Since aluminum nitride, which has been found to have excellent fluorine plasma resistance, is used as the material of the susceptor wafer support plate, there is almost no corrosion or dust generation of the susceptor plate and it can be used at high temperatures. Further, even at high temperature, deformation or the like hardly occurs. Further, since aluminum nitride has excellent thermal conductivity, it is possible to improve the temperature uniformity of the susceptor wafer supporting surface.

In order to solve the above-mentioned problems, the present invention is the above-mentioned susceptor device, further, at least a side wall is made of ceramics, and a bottomed cylindrical body for supporting the susceptor block from the rear surface at the opening end, And an inert gas supply means capable of flowing an inert gas into the bottomed cylinder at a pressure higher than the atmospheric pressure of the gas around the bottomed cylinder.
The high-frequency electrode wiring and the metal heater wiring drawn from the back surface of the susceptor block pass through the bottomed cylinder and are led to the outside.

The wiring for the high frequency electrode and the wiring for the resistance metal heater are both embedded in the susceptor wafer support plate, and extend out from the back surface of the susceptor wafer support plate. A thermocouple connected to the thermocouple on the back side of the susceptor plate also extends from the back side of the plate. This wiring passes through the cylindrical body and is led to the outside. Therefore, the wiring that passes through the cylinder filled with the inert gas is not exposed to the gas around the cylinder.

In another embodiment, the ground conductor (electrode)
And, a serpentine heater (heater) having a guard loop wound around it is embedded in a susceptor wafer support plate formed by laminating several layers of aluminum nitride by using a pressure porcelainization (PAD) method. In this embodiment, two separate gas passages are provided on the surface of the susceptor wafer support plate. In one gas passage, gas is guided to the vacuum source from a vacuum chuck opening on the surface of the susceptor wafer support plate. The other gas passage directs purge gas from the gas source around the susceptor wafer support plate. A purge ring supported around the plate (not bonded) causes the purge gas to flow upward from the plate periphery toward the center of the wafer.

A hollow grooved aluminum nitride susceptor stem is also bonded to the backside of the plate using the PAD method. The stem and the back surface of the plate are hermetically sealed so as to meet the leak criteria under vacuum between the center of the hole of the stem and the outside. The stem extends outside the reaction chamber and through a seal in the wall of the reaction chamber. The stem is provided with a passage embedded in its wall, from the end of the stem outside the reaction chamber to the position where the corresponding device on the back of the susceptor plate receives the susceptor device, i.e. ground conductor, heater connection conductor, vacuum supply, purge gas. Sealed to enter and pass the supply and thermocouple passages. The alumina heater support sleeve is installed near the grooved stem inside the reaction chamber,
It somewhat prevents the full exposure of the stem to the process environment within the reaction chamber and minimizes heat loss from the top of the stem due to radiative heat transfer.

[0019]

[Function] Since aluminum nitride, which has been found to be excellent in fluorine-based plasma resistance, is used as the material of the susceptor block, there is almost no corrosion or dust generation of the susceptor block, and it can be used at high temperature. Further, even at high temperature, the susceptor block is hardly deformed.

Further, since aluminum nitride has excellent thermal conductivity, it is possible to improve the temperature uniformity on the surface of the susceptor.

Further, since the inert gas can be flown into the bottomed cylinder supporting the susceptor block at a pressure higher than the atmospheric pressure around the bottomed cylinder by the inert gas supply means, the bottomed cylinder is closed. Due to the pressure difference between the atmospheric pressure around the cylinder and the internal pressure, the surrounding gas does not flow into the bottomed cylinder. Therefore, the high-frequency electrode wiring and the metal heater wiring that pass through the bottomed cylinder are not exposed to the gas around the bottomed cylinder.

[0022]

Embodiments of the present invention will be described below with reference to the accompanying drawings.

[0023] The susceptor apparatus will be described according to the first embodiment of the present invention based on the first embodiment FIG. 1 through FIG.

As shown in FIG. 1, the susceptor device according to this embodiment comprises a susceptor block 11 and a support base 2 for the susceptor block. A gas supply tube 32 is connected to the bottom surface of the support base 2. The heater lead wire 13, the thermocouple lead wire 14a, and the high-frequency metal electrode lead wire 12a also pass through the bottom surface of the support base 2 and are connected to an external power source (not shown) as described later. Gas supply tube 3
2 is further connected to the mass flow controller 34. The mass flow controller 34 is the gas pipe 3.
It is connected to the gas cylinder 36 via 8.

As shown in FIG. 2, a high-frequency metal electrode plate (RF metal electrode plate) 12, a heater 13 for heating, and a thermocouple 14 are provided inside the susceptor block 11 made of aluminum nitride. Aluminum nitride used as the susceptor block 11 is a material that has been drawing attention in recent years and has been conventionally known as a ceramic having thermal conductivity, but this time, it has been found that it is particularly excellent in fluorine plasma resistance. It has been issued. It should be noted that yttrium, erbium, or the like must be mixed as a removing agent in the production of aluminum nitride. However, since it is possible that yttrium or the like may affect the wafer to some extent, a high-purity aluminum nitride with a small amount of impurities such as yttrium mixed therein is preferable.

The susceptor block 11 is a disc-shaped plate having an outer periphery that gradually expands from the front surface to the back surface and has a cylindrical convex portion 11a in the central portion.

A through hole 15 is formed in the susceptor block 11. A bar (not shown) for lifting the wafer vertically extends through the through hole 15. Therefore, since the wafer placed on the susceptor block 11 is lifted by the rod, the wafer can be easily taken.

The RF metal electrode plate 12 is embedded near the surface of the susceptor block 11. The RF metal electrode plate 12 is a disk-shaped metal plate having pores formed in a mesh shape. The RF metal electrode plate 12 is connected to the RF electrode lead wire 12a, and a high frequency current is supplied from an external power source via the RF electrode lead wire 12a.

The heater 13 for heating is the susceptor block 1.
It is embedded near the back surface of 1. That is, the heater 13 for heating is provided below the RF metal electrode plate 12. In the present embodiment, the heater 13 for heating has a shape in which an elongated rod is meandered as shown in FIG. 3, but a heater having a shape other than this, for example, an elongated rod in a spiral shape. May be. The lead wires 13a and 13b for the heaters are connected to both end faces of the elongated rod which constitutes the heater 13 for heating, and an electric current is supplied to the heater 13 for heating (see FIG. 4).

The thermocouple 14 is provided on the convex portion 11 a of the susceptor block 11. The thermocouple 14 is fixed to the convex portion 11a of the susceptor block 11 via the metal member 17 as follows. That is, the susceptor block 1
A first screw groove is provided on the inner peripheral surface of the hole formed by punching a desired portion of the first convex portion 11a. Then, a hollow cylindrical metal member 17 having a screw thread on the outer peripheral surface so as to be engaged with the first screw groove is screwed into this hole. A second thread groove is further provided in the hollow portion of the metal member 17. A thermocouple 14 having a thread on the main body is fitted into the second thread groove. The metal member 17 is made of nickel, which has excellent thermal conductivity and fluorine resistance. In this way, the thermocouple 14 is not directly fitted to the susceptor block 11, but the metal member 17 is interposed. Since the susceptor block 11 is made of a ceramic member and is brittle, when the thermocouple 14 is directly fitted, Susceptor block 1 when exchanged many times
This is because 1 may be broken. The thermocouple 14 is provided with a thermocouple lead wire 14a (see FIG. 4).
The thermocouple lead wire 14a is connected to an external information processing device (controller) such as a computer.

As shown in FIG. 4, the support base 2 has a hollow cylindrical shape. Inside the support base 2, the heater lead wires 13a and 13b drawn out from the susceptor block 11, the thermocouple lead wire 14a and the RF wire are provided. The electrode lead wire 12a passes through. Alumina, which is a type of ceramic material, is used as the material of the support base 2, but it goes without saying that other ceramic materials may be used.

A susceptor block 11 is provided on the upper surface of the support base 2.
Is attached. The susceptor block 11 is fixed to the support base 2 by screws (not shown). At this time, the convex portion 11 a of the susceptor block 11 is attached so as to be inside the support base 2.

A flat plate 4 is attached to the bottom surface of the support base 2. The flat plate 4 is fixed to the support base 2 with screws (not shown). At a predetermined position on the flat plate 4, the thermocouple lead wire 14a and the heater lead wires 13a, 13 are provided.
Holes for allowing the b and the RF electrode lead wire 12a to pass through are respectively formed. Furthermore, the flat plate 4
A gas supply tube 32 for introducing an inert gas into the inside of the support base 2 penetrates into the predetermined position of. This gas supply tube 32 is a flexible tube 3 on the way.
2a. The gas supply tube 32 is connected to the mass flow controller 34 as described above, and the inert gas sent from the mass flow controller 34 is poured into the support base 2. In addition,
Examples of the inert gas supplied at this time include argon gas and the like.

Therefore, the inert gas can always be poured into the inside of the support base 2. As described above, by inflowing the inert gas into the support base 2 and applying a pressure difference between the inert gas and the external gas atmosphere, it is possible to prevent the external gas from flowing into the support base 2. That is, the support base 2
If the surrounding gas atmosphere surrounding the is fluorine gas,
Although the internal lead wires will be corroded, the support base 2 according to the present embodiment can prevent the corrosion of the lead wires because these gases do not flow inside. As described above, the inert gas is poured into the inside of the support base 2 to prevent the inflow of gas from the outside by providing a pressure difference with the outside, so that the support base 2 and the susceptor block 11 are completely adhered to each other. This is because it is difficult to keep the inside completely airtight. This is because both the material forming the support base 2 and the material forming the susceptor block 11 are made of ceramics, and it is very difficult to bring them into close contact.

Next, a CVD apparatus using the susceptor apparatus according to this embodiment will be described with reference to FIG.

As shown in FIG. 5, an exhaust port 53 is provided on the side surface of the housing 5 forming the reaction chamber of this CVD apparatus, and the diameter of the support 21 is provided on the bottom surface of the housing 5. A hole 51 having a wider diameter is provided. The hole 51 on the bottom surface of the housing 5 is provided with the above-described susceptor device according to the present embodiment.

The support base 21 of the susceptor device described above is used.
On the outer peripheral surface of the first part having an L-shaped cross section above the central part thereof.
Of the beloze holding portion 21a is provided around. A second bellows holding portion 56 is provided inside the housing 5 around the hole 51. The bellows 8 are held by the first and second bellows holding portions.

Further, the flat plate 42 is provided with an elevating device 44, and by moving the flat plate 42 up and down, the distance between the susceptor block 11 and the raw material gas injection nozzle 6 described later can be adjusted.

A raw material gas injection nozzle 6 is provided on the ceiling surface 52 of the housing 5. The raw material gas injection nozzle 6 is
The injection port 62 and the surface of the susceptor block 11 of the susceptor device are provided so as to face each other. The raw material gas injection nozzle 6 also serves as an RF electrode and is in a pair relationship with the RF metal electrode plate 12 provided in the susceptor device. The raw material gas injection nozzle 6 and the RF metal electrode plate 12 are connected to a high frequency power source 72 via an RF electrode lead wire 12 a and a switch 70. The thermocouple 14 provided in the susceptor device is the thermocouple lead electrode 1
It is connected to the controller 74 via 4a, and the output signal from the thermocouple 14 is input to the controller 74. The heating heater 13 includes heater lead wires 13a, 1
It is connected to the high frequency power supply 76 via 3b and the switch 78.

The controller 74 controls the heating heater 13 by turning on / off the switch 78 based on the information from the thermocouple 14, and turns on the switch 70.
-Turns OFF and also controls the RF electrode.

Using this device, SiO ₂ is deposited on the semiconductor substrate.
A method for forming a film will be described.

First, the switch 78 of the heating heater 13 is turned on to supply a current from the power supply 76 to the heating heater 13. The heater 13 heats the temperature of the susceptor block 11 to 700 ° C. or higher. Next, the semiconductor substrate 7 is placed on the susceptor block 11. TEOS which is a raw material gas of SiO ₂ is introduced from the raw material gas injection nozzle 6,
The TEOS and the oxidizer are sprayed onto the semiconductor substrate 7. The semiconductor substrate 7 is heated for a predetermined time while supplying the source gas. Then, a SiO ₂ film is formed on the semiconductor substrate 7.

At this time, aluminum nitride is used as the susceptor block 11 in the same manner as above, and since aluminum nitride has the same thermal conductivity as aluminum, the temperature uniformity on the surface of the susceptor plate is approximately the same as aluminum. The temperature uniformity can be obtained.

Next, a method of cleaning the inside of the reaction chamber 31 after forming the SiO ₂ film on the semiconductor substrate 7 will be described. This cleaning is performed because SiO ₂ may be deposited in the housing 5.

First, a fluorine-based gas is introduced from the raw material gas injection nozzle 6. At the same time, the switch 70 is turned on to apply a voltage to the RF metal electrode plate 12 and the source gas injection nozzle 6 provided in the susceptor device. As a result, the inside of the housing 5 becomes a plasma state of fluorine-based gas, and SiO ₂ in the housing 5 is etched and cleaned.

Since aluminum nitride excellent in fluorine plasma resistance is used as the material of the susceptor block 11, the susceptor block 11 is hardly corroded or dusted, and the susceptor block 11 is not consumed even after long-term use. Therefore, it is not necessary to cover with a protective film. Therefore, the reliability is not deteriorated due to the peeling of the protective film such as the conventional susceptor.

Furthermore, since the RF metal electrode plate 12 is provided inside the susceptor block 11, it is not affected by the fluorine-based plasma. Therefore, there is no problem such as metal corrosion due to fluorine-based plasma.

Further, as described above, since the inert gas is constantly flown into the inside of the support table 21 and a pressure difference is established between the gas atmosphere and the external gas atmosphere, the external gas is absorbed by the support table 2.
It does not flow into the inside of 1. Therefore, it is possible to prevent the lead wires in the support base 21 from being corroded by the fluorine gas or the like. It should be noted that the CVD apparatus according to the present embodiment uses SiO ₂
Not only the film but also a metal film such as tungsten can be formed in the same manner.

The CVD apparatus according to the above embodiment can also be used for plasma CVD. At this time, R
This is performed by using the F metal electrode plate 12 and the source gas injection nozzle 4, which is one of the plasma electrodes, as a plasma electrode for plasma CVD.

Second Embodiment Next, a susceptor device according to a second embodiment of the present invention will be described with reference to FIGS.
This will be described with reference to FIG.

As shown in FIGS. 6 and 7, the susceptor device of this embodiment is composed of a susceptor device (wafer supporting plate) 39.
And a support base (cylindrical body) 25 having a bottom plate 29. The gas supply tube 5 is attached to the bottom plate 29 of the cylindrical body 25.
3 is connected. Lead wire 89, 9 for heater 43
1, the thermocouple lead wire 93 and the high frequency metal electrode 41 lead wire 87 pass through the bottom plate 29 of the tubular body 25 and are wired. The gas supply tube 53 is connected to the mass flow controller 55 via a flexible tube 97. The mass flow controller 55 is connected to the gas cylinder 57 via a gas pipe 59.

Aluminum nitride used for the susceptor support plate 39 is a material conventionally known as a ceramic having thermal conductivity. It has been found that aluminum nitride is also excellent in fluorine plasma resistance. Yttrium or erbium must be mixed as a decontaminating agent (increase porcelainization) in the production of aluminum nitride. However, since it is possible that yttrium or the like may affect the wafer to some extent, a high-purity aluminum nitride with a small amount of impurities such as yttrium mixed therein is preferable.

Since aluminum nitride having the same thermal conductivity as aluminum is used for the susceptor wafer support plate 39, the susceptor wafer support plate can obtain the same temperature uniformity as that made of aluminum.

As shown in FIG. 7, the cylindrical body 25 (preferably alumina or other ceramic material is used) is in the shape of a hollow cylinder, and the heater lead drawn out from the susceptor wafer support plate 39. Line 8
9, 91, the thermocouple lead wire 93 and the RF electrode lead wire 87 pass through the inside of the cylinder and the bottom plate 29.

A susceptor wafer support plate 39 is attached to the upper surface of the cylindrical body 25, and screws (not shown) are attached.
Is fixed by. The susceptor convex portion 83 of the susceptor plate 39 is attached so as to be inside the tubular body 25. Susceptor wafer support plate 3 according to the invention
9 is an aluminum nitride solid member.

A flat plate 29 is attached to the bottom surface of the cylindrical body 25 with screws (not shown). A hole for allowing the thermocouple lead wire 93, the heater lead wires 89, 91, the RF electrode lead wire 87, and the gas supply tube 53 to pass through the bottom plate 29 and the tubular body 25 is provided at a predetermined position of the flat plate 29. Has been drilled. The gas supply tube 53 is a flexible tube 97 on the way,
It is connected to the mass flow controller 55 as described above, and the inert gas (for example, argon) sent from the mass flow controller 55 is poured into the inside of the cylindrical body 25.

It is possible to prevent the external gas from flowing into the tubular body 25 by constantly flowing the inert gas into the tubular body 25 and applying a pressure difference between the inert gas and the external gas atmosphere. . That is, the surrounding gas atmosphere surrounding the tubular body 25 is corroded like fluorine gas, and the lead wires on the back surface of the susceptor wafer support plate 39 are usually corroded severely. However, when the arrangement according to the invention is used, the inert gas inside the tubular body 25 replaces the corrosive gas inside the tubular body 25 and prevents the corrosive gas from reaching the lead wires, which leads to corrosion of the lead wires. Can be prevented. The inert gas is caused to flow in this way because it is difficult to completely adhere the alumina cylinder 25 to the aluminum nitride susceptor wafer support plate 39 and keep it in a completely airtight state.

As shown in FIG. 8, a high-frequency metal electrode plate (RF metal electrode plate or electrode) 4 is provided on the susceptor wafer support plate 39 made of a solid body of aluminum nitride.
1, the heater 43 and the thermocouple 45 are embedded.

The outer circumference of the susceptor wafer support plate 39 gently spreads from the surface to the bottom like a conical surface. A cylindrical convex portion 83 extending from the center of the bottom surface of the susceptor wafer support plate 39 is provided on the bottom surface thereof.

Four through holes (lift pin holes) 47 are formed in the susceptor wafer support plate 39.
A rod (not shown) for lifting the wafer vertically extends through the lift pin hole 47. Therefore, the wafer placed on the susceptor wafer support plate is lifted by the rod, which makes the wafer easier to pick up.

The RF metal electrode plate 41 is embedded near the surface of the susceptor wafer support plate 39. This RF
The metal electrode plate 41 is a disk-shaped metal plate having pores formed in a mesh shape. The RF metal electrode plate 41 is RF
It is connected to the electrode lead wire 87, and a high-frequency current is supplied from an external power source via the RF electrode lead wire 87.

The heater 43 is embedded near the back (bottom) surface of the susceptor wafer support plate 39. That is, R
A heater 43 is provided below the F metal electrode plate 41. Narrow bar (heating heater) as shown in FIGS. 9 and 10.
It uses a meandering shape, but the heater rod 4
The shape of 3 may be other than this, for example, a spiral shape. The lead wires 89 and 91 for the heater are connected to both end surfaces of the elongated rod which constitutes the heater 43, and an electric current is supplied thereto.

The thermocouple 45 is provided on the convex portion 83 of the susceptor wafer support plate 39. This thermocouple 45
Is a convex portion 8 via a metal member (hollow cylindrical member provided with a screw thread-thermocouple bushing provided with a screw thread) 49.
It is fixed at 3. A hole is engaged with a predetermined position on the back surface of the ceramic convex portion 85 so as to obtain the thermocouple bushing 49. Then, the bushing 49 is screwed into the engaged hole. A thread is provided in the hollow portion of the bushing 49, and a thermocouple 45 having the thread is fitted therein. The bushing 49 is made of nickel having excellent thermal conductivity and fluorine resistance. In this way, the thermocouple 45 is not directly fitted to the susceptor wafer support plate 39 but the metal member 49 is interposed. The ceramic material of the susceptor wafer support plate 39 is fragile. Therefore, the thermocouple was exchanged many times. This is because there is a risk of breakage. The thermocouple lead wire 93 is connected to an external information processing device (controller) such as a computer (not shown).

A CVD apparatus using the above susceptor apparatus is shown in FIG. An exhaust port 67 is provided on the side surface of the reaction chamber 31 of the CVD apparatus, and a hole 99 having a diameter larger than the diameter of the cylindrical body 25 is provided on the bottom surface of the reaction chamber 31.
The hole 99 of the reaction chamber 31 is provided with the above-mentioned susceptor device.

A first bellows holding portion (flange) 95 having an L-shaped cross section is provided around the outer peripheral surface of the cylindrical body 25 above the central portion thereof. A second bellows holding portion (flange) 69 is provided inside the reaction chamber 31 around the hole 99.
Is provided. The bellows 37 is held by the first and second bellows holding flanges 95 and 69.

Further, the plate 29 is provided with an elevating device 61, and by moving the plate 29 up and down, the distance between the susceptor wafer support plate 39 and the source gas injection nozzle device (process gas supply device) 33 is adjusted. be able to.

A raw material gas injection nozzle device 33 is provided on the ceiling (upper) surface 65 of the reaction chamber 31. The raw material gas injection nozzle device 33 includes an injection port (gas distribution plate) 7
1 and the surface of the susceptor wafer support plate 39 are provided so as to face each other. The source gas injection nozzle device 33 also serves as an RF electrode and a second electrode, and has a paired relationship with the RF metal electrode plate 41 and the first electrode provided in the susceptor device. The raw material gas injection nozzle device 33 and the RF metal electrode plate 41 are connected to a high frequency power supply 75 via an RF electrode lead wire 87 and a switch 73.
The thermocouple 45 provided in the susceptor device is connected to the controller 77 via the thermocouple lead electrode 93, and an output signal from the thermocouple 45 is input to the controller 77. The heater 43 has heater lead wires 89, 9
1 and the switch 81, and is connected to the power supply 79.

The controller 77 turns on / off the switch 81 based on the information from the thermocouple 45, and the heater 4
3, the switch 73 is turned on and off, and the RF electrode is also controlled.

Using this device, SiO ₂ is deposited on the semiconductor substrate.
A method for forming a film will be described.

First, the switch 81 is turned on, and the power source 79
Supplies current to the heater 43. The heater 43 heats the temperature of the susceptor wafer support plate 39 to 700 ° C. or higher. Next, the semiconductor substrate 35 is placed on the susceptor wafer support plate 39. TEOS which is a raw material gas of SiO ₂ is introduced from a raw material gas injection nozzle device 33,
The TEOS and the oxidizer are sprayed onto the semiconductor substrate 35. The semiconductor substrate 35 is supplied for a predetermined time while supplying the source gas.
To heat. Then, a SiO ₂ film is formed on the semiconductor substrate 35.

In the step of depositing the SiO ₂ film on the substrate 35, the SiO ₂ film is also deposited on the wall of the reaction chamber 31. It is necessary to clean the reaction chamber 31 in order to remove this excess SiO ₂ . Next, a cleaning method will be described.

First, a fluorine-based gas is introduced from the raw material gas injection nozzle device 33, and at the same time, the switch 73 is turned on.
RF metal electrode plate 41 provided on the susceptor device as N
And a voltage is applied to the raw material gas injection nozzle device 33. As a result, the inside of the reaction chamber 31 becomes a plasma state of fluorine gas, and the SiO ₂ inside the reaction chamber 31 is etched and cleaned.

At this time, the susceptor wafer support plate 3
As the material of No. 9, aluminum nitride excellent in fluorine plasma resistance is used. Therefore, the susceptor wafer support plate 39 is hardly corroded or dusted, and the surface is not consumed even after long-term use, so that it is not necessary to cover it with a protective film. Therefore, there is no problem caused by peeling off the protective film such as the conventional susceptor.

Further, since the RF metal electrode plate 41 is provided inside the susceptor wafer support plate 39, it is not affected by the fluorine-based plasma. For this reason,
There is no problem of corrosion of the metal electrode due to the fluorine-based plasma.
Further, as described above, it is possible to prevent the lead wire in the tubular body 25 from being corroded by the fluorine gas or the like because the inert gas is constantly flown into the tubular body 25.

The CVD apparatus according to the present embodiment uses Si
Not only the O ₂ film but also a metal film such as tungsten can be similarly formed. Further, the CVD apparatus according to the above-mentioned embodiment can also be used for plasma CVD (PECVD). At this time, the RF metal electrode plate 41 and the source gas injection nozzle 31, which is one of the plasma electrodes, are used as plasma electrodes for plasma CVD.

When used at a low temperature of 0-100 ° C., the aluminum nitride coating has the same expansion coefficient as that of alumina and silicon carbide, but when used at a high temperature of 650-750 ° C., the aluminum nitride coating of alumina cannot be used and the silicon nitride coating cannot be used. Carbide can only be used to the limit.

Third Embodiment Next, FIG. 12 shows a susceptor device according to a third embodiment of the present invention.
~ It demonstrates with reference to FIG.

Another embodiment according to the present invention is shown in FIGS.
28. The susceptor device of this example is constructed from a generally flat multi-layered member of aluminum nitride material and bonded to an aluminum nitride stem using a ceramic pressure porcelain (PAD) process. A ground electrode and a heater are sandwiched between flat laminates of aluminum nitride. The aluminum nitride layer is provided with a vacuum passage to the vacuum chuck on the surface of the susceptor, a purge gas passage around the susceptor, and a thermocouple inlet / outlet hole. The susceptor device (ground connection, first lead wire for heater, second lead wire for heater, vacuum connection body, purge gas connection body and thermocouple input / output) is all bottomed inside the wall of the hollow susceptor stem with grooves. Feed through the passage to the susceptor wafer support plate. None of the corrosive susceptor devices extends through the walls of the reaction chamber so that they are not exposed to the process gas.

FIG. 12 is an enlarged view of this embodiment. The wafer support plate apparatus 100 has an upper surface 102, and is provided with a vacuum chuck groove pattern 104 and four wafer lift pinholes 106, 107, 108 and 109.

The upper surface 102 is the wafer support plate apparatus 1
It is surrounded by a purge ring 112 which is supported by 00 but is not bonded. In the purge ring 112,
It has six sites 114 for attaching the six wafer guide pins 116 (only one shown enlarged).

The plate apparatus 100 is supported and coupled to a grooved hollow susceptor stem 120. The stem 120 has six grooves on its outside, with a series of ridges, eg, 124, 129, between the grooves. An O-ring for sealing the wall of the reaction chamber is fitted to an O-ring globe 132 near the bottom of the stem 120. The interlocking stem portion 133 is shaped to support the susceptor against a complementary shaped outer support. The thread 134 on the bottom of the stem 120 provides an external support for the portion 133 mated with the stem, and also secures the connector body 136 of the device to the bottom of the stem when the susceptor is installed in the reaction chamber. The connector body 136 of the device has wiring and tube 13 for the device.
8 are connected. An alumina support tube 140 is fitted on the outside of the bottom end of the stem 120. The tube 140
Partially prevents the full exposure of the stem to the process environment in the reaction chamber and minimizes heat loss from the top of the stem due to radiative heat transfer.

Pins 142, 14 fixed to the susceptor stem 120 for connecting to the ground terminal and one end of the heater.
7 respectively exit from the end of the stem 120.

FIG. 18 shows the apparatus finally bonded to form a one-piece aluminum nitride wafer support plate apparatus 100.

The wafer support plate apparatus 100 consists of several generally flat discs of solid aluminum nitride and a stem 120, which are bonded together using the pressure porcelaining (PAD) method. The details of the binding parameters are unknown and the manufacturer Cercom, Inc., 1960 Watson Way, Vista, CA 92083 U.
Based on SA experience and technology. At Cercom, the work standard goals of the inventors of the vacuum leak test with helium are intimately bonded together in such a way that they are equal to or better than 1 × 10 ⁻⁷ Torr / sec.

The disk (or the first or upper layer) 160 facing the wafer is provided with the vacuum chuck groove pattern 104 and the lift pin holes 106, 107, 108 and 109. The upper layer 160 has a thickness of about 0.25 ″ (6.3 mm).

Ground loop (electrode) 1 under the upper layer 160
70 (including the continuous surface in the form of an annular loop) has a thickness of about 0.0
It is made of a 005 ″ (0.013 mm) tungsten layer and is adhered to the lower side of the upper layer 160 or the upper layer of the second layer 180 (for example, by vapor deposition). The electrode 170 extends from the bottom of the stem 122 which is grounded. Connected to a grounding pin 142 (e-beam welding is preferred).

The second (or purge gas groove) layer 180 is provided with a lower diameter purge gas groove 182 (shown by the dotted line in FIG. 18) to allow the purge gas to pass through the purge gas passage 144 (described below) in the stem 120. ) To the periphery of the purge distribution channel 150 (FIGS. 21 and 25). The device is supplied to the upper layer 160, that is, the ground pin passage, the thermocouple passage, the vacuum chuck supply passage 156 and the lift pin hole 106 through the holes provided in the second layer 180. The second layer 180 has a thickness of about 0.296 ″ (7.52).
mm).

Third (or heater coil pattern) layer 19
A 0 is provided below the second layer to close the purge gas groove 182 at the bottom of the second layer. The heater coil array 200 is closely attached to the bottom surface thereof. The device is supplied to the upper layer 160 and the second layer 180, that is, the ground pin passage, the thermocouple passage, the purge gas passage, the vacuum chuck supply passage, and the lift pin hole 106 through the holes of the third layer. The third layer 190 is about 0.145 ″ (3.68 mm) thick.

The heater coil array 200 has a thickness of about 0.000.
It consists of a 5 ″ (0.013 mm) tungsten layer and is adhered to the underside of the third layer 190 (eg by evaporation). The heater coils are arranged in a sinusoidal meandering pattern 202 along concentric circles connected in three rows. The vacuum passage 155a is arranged.
And the normal wave pattern deviates and passes through the pattern only to avoid the lift pinhole 106. The protective perimeter heater ring group 204 is continuously connected to one end of the meandering pattern 202 and surrounds the perimeter thereof. The resistive protection ambient loop 204 increases the input to its surrounding susceptor to compensate for more heat loss than its surroundings. A single zone heater control can be used because the geometry of the serpentine pattern 202 and the phosphorus group 204 compensates for the low temperature due to the high heat loss around it. The meandering portion 202 of all heaters and the protective heater ring 2
04 is fitted with a resistance of about 7.14 ohms at 20 ° C. The heater is connected to the heater electrode pins 145 and 147 (preferably electron beam welding), and the stem 120
Extends from the bottom to the top.

The bottom surface of the heater 200 is covered with a 0.03 ″ (0.79 mm) thin paper layer 207 of aluminum nitride.
This layer 207 acts as a filling material in the bond and the heater 2
00 and separates the next layer below. The device can pass through this layer through the holes to the upper layer.

The vacuum distribution (or fourth) layer 209 comprises two separate parts, a disk-shaped fourth inner layer 210 and an annular fourth outer layer 2.
20 and is provided below the third layer and the thin paper layer 207. The fourth inner layer 210 is provided with a radial groove 149,
It extends from the stem 120 to the circumference of the fourth inner layer 210. The fourth outer layer 220 has an inner diameter larger than the outer diameter of the inner layer 210, and when the two layers are generally concentric, an annular passage 151 is formed between them to connect with the susceptor surface vacuum chuck groove pattern 104. A hole, for example,
The vacuum around the susceptor is distributed to 155. The fourth outer layer 220 is provided with a perimeter flange 222, as shown in FIGS. 16 and 20, and includes a second (180) and a third (19).
0) Form an outer wall of the peripheral channel 150 around the layer to disperse the purge gas. These fourth layers 210, 220
Through the holes in the device into the upper layers, namely ground pin passages, thermocouple passages, purge gas passages, heater pin passages and lift pin holes 106. The fourth layer 209 in the outer flange 222 is about 0.125 ″ (3.18 mm) thick.
The outer flange 22 is about 0.59 above the lower surface of the layer.
It is raised by 7 ″ (15.16 mm) (approximately the same as the top of the second layer 180) and has a thickness of 0.195 ″ (4.95 mm).

The bottom fifth layer 230 is the interior 2 of the fourth layer 209.
Bond to the bottom surface of the fourth layer 209 to close the annular vacuum passage between 10 and the exterior 220. The bottom surface of this fifth layer is bonded to the top of the susceptor stem 120. All devices pass through the holes to the upper layers, respectively. The fifth layer 230 is about 0.123 ″ (3.12 mm) thick.

The first to fifth layers (160, 170, 18)
0, 190, 200, 209, 230) are bonded together, the wafer support plate apparatus 100 is configured. The susceptor stem 120 and the purge ring 112 together with the wafer support plate apparatus 100 are the present embodiment of the susceptor apparatus according to the present invention. Details and adaptations of the various parts will be understood in the following detailed description.

FIG. 13 is a side view of the susceptor shown in FIG. 12, in which the purge ring 112 is removed and the heater support tube 140 is shown in cross section. In this view, the shelf normally occupied by the purge ring 112 is seen around the top of the device 100.

FIG. 14 is a top view of FIG. 13 viewed from 9-9. The peripheral purge gas distribution channel 150 is located just inside the outer flange 222. That ring 11
An array recess 226 that is directed into the purge ring 112 to match the purge array key 115 of FIG. 2 (FIG. 17).
Is provided. The vacuum chuck groove pattern 104 is the upper layer 1
It is connected to a vacuum passage device passing through 60 and installed at the center of the upper surface. Details of the vacuum chuck groove pattern are shown in FIG.
Seen in. FIG. 20 is a vertically enlarged cross section of the upper layer 160. The vacuum chuck pattern 104 is provided with a series of concentric channels 171 and has a perimeter 176 and a center 173.
They are connected to each other by some shallow crossing channel grooves in the vicinity. A circumferential groove 174 connects the central radial groove 173 and the external radial groove 176. The cross channel grooves 176 connect to a series of eight vacuum supply passages and are equally spaced around the center. Each vacuum supply passage 164
Is connected to two narrow plasma closed vacuum outlet holes 162. These holes 162 are sized to prevent the cleaning gas, eg, plasma of fluorine or the like, from reaching the vacuum passage.

FIG. 15 shows an end view of the bottom of the susceptor stem 120. The ground connector pin 142, the arrangement reference hole 143, the purge gas passage 144, the (first) heater connector pin 145, the vacuum passage 146, the (second) heater connector pin 147, and the thermocouple passage hole 148 are the walls of the hollow cylindrical susceptor stem 120. It is installed counterclockwise.

FIG. 16 is a cross section of the stem 120 taken along line 11-11 in FIG. Connection device, 142, 14
4, 145, 146, 147, 148 are as described above and are embedded in the wall of the stem and sealed to each other.
Stem 1 to lower layer 230 of susceptor plate device 100
Grooves 122 extending above 20 reduce the cross-sectional area of the stem while maintaining relatively high structural rigidity. The wafer support plate apparatus 10 has a reduced cross section due to the reduced area.
Heat is conducted away from zero, which causes the stem 12
Below zero, the heat lost by conduction can be reduced. The hollow center 130 of the stem also reduces heat loss as it is filled with poor heat conducting air.

FIG. 17 is a cross section of FIG. 14 cut at 12-12. The ground connection pin 142 has a diameter of about 0.09.
It is a 3 "(2.36 mm) tungsten rod. This pin 1
42 has a pin head with a diameter of about 0.156 ″ (3.96 mm) that holds and secures the upper end of the pin 142 to the ground loop 170 on the second layer 180 which is opposite but shallow. Is connected to ground loop 170 by electron beam welding (as described above) Stem 120
The diameter of the grounding pin hole for the grounding pin that passes through the various layers of the wafer plate apparatus 100 is about 0.125 ″ (3.175 mm), and the grounding pin expands and contracts freely with temperature changes, but the pin head is still grounded. Keeping away from loop 170. Shown is the path of the vacuum passage through the surface of the stem and wafer support apparatus 100. The stem O-ring groove 132 outside the stem 120 is the susceptor on the O-ring groove 132. It is separated by the parting line of the equipment component and must be tightly sealed to withstand the aforementioned helium leak test as it is exposed to vacuum, but that component exposed to the atmosphere, namely the O-ring. Those below the groove 132 and inside the hollow core 130 of the stem 120 do not need to be leak tested.

FIG. 17 also shows a cross section of the purge ring 112. As shown, the purge ring 112 is in a raised position from the operating position. When it is in the actuated position, the purge ring array key 115 fits into the groove 226 of the wafer support apparatus 100 array.

FIG. 21 shows a cross section of FIG. 14 cut at 16-16. The second heater pin 147 is shown connected to the heater layer 200. The attachment and installation are the same as those of the ground pin 142. The opening of the annular vacuum passage 146 is found above the lower layer 230. The purge gas passage 144 has the purge gas groove 182 in the second layer 180.
Connected with and shown. The purge gas groove 182 is provided with an exhaust passage 184 (FIGS. 26 and 27) via an orifice 185.
Perimeter channel 1 inside the circumferential flange 222 connected to
Up to 50.

FIG. 22 shows a cross section of FIG. 14 cut at 17-17. The first heater pin 145 is shown connected to the heater layer 200. The attachment and installation are the same as those of the installation pin 142. Thermocouple hole 1
48 is shown through stem 120 through all but the top layer 160. Two thermocouples (not shown) inside the end of the tube adjacent to the back of upper layer 160
Is attached. One thermocouple is measured and a signal is sent to a temperature controller (not shown). The other thermocouple is connected to an over temperature coupled sensor (not shown). The thermocouple tube is smaller than the thermocouple hole 148, is attached to the connector body 136 of the device by a spring, and continuously urges the thermocouple to the back surface of the upper layer 160, so that the tube thermally expands during operation.

FIG. 23 shows a cross section of FIG. 14 cut at 18-18. Two of the eight vertical passages connecting the vacuum passages 46 to the surface of the wafer support plate apparatus 100 are shown. Lift pinholes 106 and 10
8 can be seen.

FIG. 24 is an enlarged view of the thermocouple hole 148 of FIG. Wafer support plate apparatus 100 as described above
Layers are visible.

25 and 27 show a plate device 100.
It is an enlarged view of a cross-section around the. The purge ring 112 is shown properly (in FIG. 27, the guide pins 116 (shown in FIG. 12) are located only at six locations around the perimeter of the ring 112, and these locations are shown in FIG. The purge ring array key around one side is at a radius which subsequently projects into the ring with an arc of 5, 55 and 55 °, so that the pin 116 is actually the purge gas passage 1.
Not above 84). The bottom surface of the purge ring 112 covers the top surface of the purge distribution perimeter channel 150. The ring 112 has grooves 119 on the bottom surface thereof, and 240 pieces of orifice holes 117 arranged at equal intervals (orifices near one end are narrow) are provided around the ring 112 and processed on the susceptor. Purge gas flows toward the edge of the wafer (not shown). Orifice hole 117 enters narrow angular circumferential groove 118,
Further, the purge gas is distributed through 240 orifice holes 117. The purge gas forms a continuous gas sheet from the groove 118, thereby preventing the process gas from adhering to the edge or back surface of the wafer.

FIG. 28 shows the arrangement of the susceptor device of this embodiment in the reaction chamber 244. A gas distribution plate 246 is provided in the reaction chamber 244 and faces the susceptor wafer supporting surface 250. The susceptor device 260 is
The interlocked stem portion 13 that is moved up and down and the locking nut 135 provides the susceptor lifting mechanism 256.
Supported by 3. The reaction chamber 244 is a stem seal 24.
At 8, the area around the susceptor device 260 is sealed. The susceptor device 138 is connected to the end of the stem. Four wafer lift pins 252 are mounted in lift pin holes in the susceptor. When the susceptor descends, the ends of the lift pins contact the lift finger support ring 254 and the lift pins 252 raise the transfer wafer. The lift finger support ring also moves up and down to move the wafer with a robotic automatic blade (not shown) that moves the wafer into and out of the reaction chamber 244.

This example illustrates an internally heated susceptor using a relatively small stem (about 2 ″ (50.8 mm) OD) in a compact reaction chamber.

Although the present invention has been described with respect to particular embodiments, those skilled in the art will recognize that changes in form and detail may be made without departing from the spirit and scope of the invention.

[0108]

As described above in detail, according to the present invention, since aluminum nitride is used as the material of the susceptor block, even if the susceptor block is exposed to fluorine plasma, the susceptor block is hardly corroded or dusted. In addition, the susceptor block can be used at a high temperature, and the susceptor block is hardly deformed even at a high temperature. Further, since the susceptor block is not consumed even if it is used for a long period of time, it is not necessary to cover it with a protective film. Therefore, the reliability is not deteriorated due to peeling of the protective film such as the conventional susceptor block.

Further, since aluminum nitride has a thermal conductivity similar to that of aluminum, the temperature uniformity of the susceptor surface can be as uniform as that of aluminum.

Furthermore, according to the present invention, since the high-frequency electrode wiring and the metal heater wiring that pass through the bottomed cylinder are not exposed to the gas around the bottomed cylinder, the internal wiring is fluorine gas. Since it does not corrode due to factors such as the above, the reliability of the device is improved.

[Brief description of drawings]

FIG. 1 is a perspective view of a susceptor device according to an embodiment of the present invention.

FIG. 2 is a partial cross-sectional perspective view of the susceptor body according to the embodiment of the present invention.

FIG. 3 is an explanatory diagram of a heating heater used in the susceptor body according to the embodiment of the present invention.

FIG. 4 is a sectional side view of a susceptor device according to an embodiment of the present invention.

FIG. 5 is a CV using a susceptor device according to an embodiment of the invention.
It is explanatory drawing of D apparatus.

FIG. 6 is a perspective view of a susceptor device according to the present invention.

7 is a side view of the susceptor device of FIG.

FIG. 8 is a partial cross-sectional perspective view of a susceptor wafer support plate according to the present invention.

FIG. 9 is a plan view of the resistance heater partially shown in FIG.

10 is a side view of the heater of FIG. 9. FIG.

11 is a diagram showing the susceptor device of FIG. 6 in a CVD reaction chamber.

FIG. 12 is a perspective view of a device of an embodiment of a susceptor device according to the present invention.

FIG. 13 is a side view of the susceptor device of FIG.

14 is a top view of the susceptor device as viewed from 9-9 in FIG. 12. FIG.

FIG. 15 is a bottom view of the susceptor device viewed from 10-10 in FIG. 13.

FIG. 16 is a cross-sectional view taken along line 11-11 of FIG.

FIG. 17 is a sectional view taken along line 12-12 of FIG.

18 is an exploded view of the susceptor device of FIG. 12 without a purge ring and a stem sleeve.

FIG. 19 is a perspective view of the upper layer of the susceptor device of FIG.

FIG. 20 is an enlarged cross-sectional view of FIG. 19 taken along line 15-15.

FIG. 21 is a sectional view taken along line 16-16 of FIG.

22 is a cross-sectional view taken along line 17-17 of FIG.

23 is a cross-sectional view of FIG. 14 cut at 18-18.

FIG. 24 is an enlarged cross-sectional view of FIG. 22 taken along line 19-19.

FIG. 25 is an enlarged sectional view taken along line 20-20 of FIG. 22.

26 is an enlarged cross-sectional view of FIG. 27 taken along 21-21.

FIG. 27 is an enlarged sectional view taken along line 22-22 of FIG. 21.

28 is a diagram showing the susceptor device of FIG. 12 in a CVD reaction chamber.

[Explanation of symbols]

2, 21, 25 ... Support base, 4, 29 ... Flat plate, 5, 31 ...
Housing, 6, 33 ... Raw material gas injection nozzle, 7 ... Wafer (semiconductor substrate), 11, 39 ... Susceptor block, 12, 4
1 ... RF metal electrode plate, 13, 43 ... Heater for heating, 1
4, 45 ... Thermocouple, 15, 47 ... Through hole, 17, 49 ...
Metal member, 32, 53 ... Gas supply tube, 34, 55
… Mass controller, 36, 57… Gas cylinder, 3
8, 59 ... Gas pipe, 42 ... Flat plate, 44 ... Lifting device,
51 ... Hole, 52, 65 ... Top plate, 54, 67 ... Exhaust port, 5
6, 69 ... Bellows holding portion, 62, 71 ... Injection port, 7
0, 73, 78, 81 ... Switch, 72, 75, 76,
79 ... High frequency power supply, 74, 77 ... Controller.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Atsunobu Okura 14-3 Shinsen, Narita-shi, Chiba Nogedaira Industrial Park Applied Materials Japan Co., Ltd. Inside the Taira Industrial Park Applied Materials Japan Co., Ltd. (72) Inventor Kenji Suzuki 14-3 Shinsen, Narita-shi, Chiba Prefecture Nogedaira Industrial Park Inside Applied Materials Japan Co., Ltd. (72) Kenichi Taguchi Shinzumi, Narita-shi, Chiba Prefecture 14-3 Nogedaira Industrial Park Applied Materials Japan Co., Ltd. (72) Inventor Dale Robert Dubois, California 95030, Los Gatos, Mulberry Drive 14285 (72) Inventor Alan Ferris Moriso United States California 95124, Cupertino, Dickens Avenue 15221

Claims (13)

[Claims] 1. A susceptor device provided in a reaction chamber for vapor phase growth, wherein a susceptor block on which a wafer is mounted is made of aluminum nitride, and a high frequency electrode and a metal heater are embedded in the susceptor device. 2. A bottomed cylindrical body, at least a side wall of which is made of ceramic, which supports the susceptor block from the back surface at the open end, and an inert gas at a pressure higher than the atmospheric pressure of the gas around the bottomed cylindrical body. An inert gas supply means that can be poured into the bottomed cylinder, and the high-frequency electrode wiring and the metal heater wiring drawn out from the back surface of the susceptor block pass through the bottomed cylinder to the outside. The susceptor device according to claim 1, which has been derived. 3. A susceptor in which a susceptor wafer support plate is made of aluminum nitride and in which a heater and an electrode are embedded. 4. The susceptor of claim 3, wherein the plate includes at least one aluminum nitride member. 5. The susceptor according to claim 3, wherein a bottomed support member is provided on the susceptor, at least a side wall of the susceptor is made of ceramic, and the support member supports the susceptor wafer support plate from a back surface. 6. An inert gas supply means for flowing an inert gas into the support member at a pressure higher than the atmospheric pressure of the gas around the support member, wherein the electrode wiring and the heater wiring are provided on the susceptor wafer support. The susceptor according to claim 5, wherein the susceptor is pulled out from the back surface of the plate, passes through the support member, and is led to the outside. 7. The susceptor wafer support plate is fixed to a susceptor stem fixed to the back side of the plate, the stem passes through a wall of the reaction chamber to the outside of the reaction chamber in an airtight manner, and the heater lead wire and the The susceptor according to claim 3, wherein the electrode lead wire passes through the stem to the outside of the reaction chamber without being exposed to the gas in the reaction chamber. 8. The susceptor stem, wherein the susceptor wafer support plate is further provided with a passage for vacuumizing a groove of a vacuum chuck pattern on a surface of the susceptor wafer support plate, the passage extending to the outside of the reaction chamber. The susceptor according to claim 7, wherein the susceptor is connected to a vacuum passage therein. 9. The susceptor wafer support plate further includes a gas purge passage around the surface of the wafer support plate, the purge gas in the susceptor stem extending to the outside of the reaction chamber. The susceptor according to claim 7, which is connected to the supply passage. 10. A hole for receiving a thermocouple is provided on the back side of the susceptor wafer support plate extending to the outside of the reaction chamber through the stem, and the susceptor is attached to the end of the thermocouple insertion device. The susceptor of claim 7, wherein a thermocouple is positioned such that it can be located on the back side of the susceptor wafer support plate. 11. The susceptor of claim 4, wherein the support plate includes a plurality of aluminum nitride laminate members bonded together. 12. The laminated member is provided with a plurality of shafts through holes arranged between the laminated members.
1. The susceptor described in 1. 13. The susceptor of claim 3, wherein the heater includes a heater ring around its periphery.