JPH0628258B2 - Semiconductor wafer heating device and manufacturing method thereof - Google Patents

Semiconductor wafer heating device and manufacturing method thereof

Info

Publication number
JPH0628258B2
JPH0628258B2 JP2190699A JP19069990A JPH0628258B2 JP H0628258 B2 JPH0628258 B2 JP H0628258B2 JP 2190699 A JP2190699 A JP 2190699A JP 19069990 A JP19069990 A JP 19069990A JP H0628258 B2 JPH0628258 B2 JP H0628258B2
Authority
JP
Japan
Prior art keywords
heater
container
wafer heating
semiconductor wafer
convex support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2190699A
Other languages
Japanese (ja)
Other versions
JPH0478138A (en
Inventor
隆雄 相馬
隆介 牛越
和宏 ▲しょう▼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to JP2190699A priority Critical patent/JPH0628258B2/en
Priority to DE69111493T priority patent/DE69111493T2/en
Priority to EP91302010A priority patent/EP0447155B1/en
Priority to US07/668,161 priority patent/US5231690A/en
Publication of JPH0478138A publication Critical patent/JPH0478138A/en
Priority to US08/035,804 priority patent/US5490228A/en
Publication of JPH0628258B2 publication Critical patent/JPH0628258B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、プラズマCVD、減圧CVD、プラズマエッ
チング、光エッチング装置等に使用される半導体ウエハ
ー加熱装置に関するものである。
TECHNICAL FIELD The present invention relates to a semiconductor wafer heating apparatus used in plasma CVD, low pressure CVD, plasma etching, a photoetching apparatus, and the like.

(従来の技術及びその問題点) スーパークリーン状態を必要とする半導体製造用装置で
は、腐食性ガス、エッチング用ガス、クリーニング用ガ
スとして塩素系ガス、弗素系ガス等の腐食性ガスが使用
されている。このため、ウエハーをこれらの腐食性ガス
に接触させた状態で加熱するための加熱装置として、抵
抗発熱体の表面をステンレススチール、インコネル等の
金属により被覆した従来のヒーターを使用すると、これ
らのガスの曝露によって、塩化物、酸化物、弗化物、酸
化物等の粒径数μmの、好ましくないパーティクルが発
生する。
(Prior art and its problems) Corrosive gases such as chlorine-based gas and fluorine-based gas are used as corrosive gas, etching gas, and cleaning gas in semiconductor manufacturing equipment that requires a super clean state. There is. Therefore, if a conventional heater in which the surface of the resistance heating element is coated with a metal such as stainless steel or Inconel is used as a heating device for heating the wafer in contact with these corrosive gases, these gases are used. Exposure causes generation of undesirable particles such as chlorides, oxides, fluorides and oxides having a particle size of several μm.

そこで第4図に示されるように、デポジション用ガス等
に曝露される容器1の外側に赤外線ランプ30を設置し、
容器外壁に赤外線透過窓31を設け、グラファイト等の耐
食性良好な材質からなる被加熱体32に赤外線を放射し、
被加熱体32の上面に置かれたウエハーを加熱する、間接
加熱方式のウエハー加熱装置が開発されている。ところ
がこの方式のものは、直接加熱式のものに比較して熱損
失が大きいこと、温度上昇に時間がかかること、赤外線
透過窓31へのCVD膜の付着により赤外線の透過が次第
に妨げられ、赤外線透過窓31で熱吸収が生じて窓が過熱
すること等の問題があった。
Therefore, as shown in FIG. 4, an infrared lamp 30 is installed outside the container 1 exposed to the deposition gas or the like,
An infrared transmitting window 31 is provided on the outer wall of the container, and infrared rays are radiated to the heated body 32 made of a material having good corrosion resistance such as graphite.
An indirect heating type wafer heating device for heating a wafer placed on the upper surface of the object 32 to be heated has been developed. However, this type has a large heat loss as compared with the direct heating type, takes a long time to rise in temperature, and the transmission of infrared rays is gradually hindered due to the deposition of the CVD film on the infrared ray transmitting window 31. There has been a problem that the transparent window 31 absorbs heat and the window overheats.

(発明に至る経過) 上記の問題を解決するため、本発明者等は、新たに円盤
状の緻密質セラミックス内に抵抗発熱体を埋設し、この
セラミックスヒーターをグラファイトの支持部に保持し
た加熱装置について検討した。その結果この加熱装置
は、上述のような問題点を一掃した極めて優れた装置で
あることが判明したが、腐食性ガスを使用する半導体装
置内では電極、熱電対のシールが必要であり、シール構
造が煩雑となるという問題点がなお残されている。
(Process leading to the invention) In order to solve the above problems, the present inventors newly developed a heating device in which a resistance heating element was newly embedded in a disc-shaped dense ceramic, and the ceramic heater was held on a graphite support portion. Was examined. As a result, this heating device was found to be an extremely excellent device that eliminated the above-mentioned problems, but in semiconductor devices that use corrosive gas, electrodes and thermocouples must be sealed. The problem that the structure becomes complicated still remains.

(発明が解決しようとする課題) 本発明の課題は、従来の金属ヒーターのような汚染を防
止でき、また間接加熱方式の場合のように熱効率の悪さ
や赤外線透過窓への膜付着のような問題を生じず、しか
も電極の腐食や、電極間、電極ケース間の放電、漏電を
も防止できるような半導体ウエハー加熱装置を提供する
ことである。
(Problems to be Solved by the Invention) The problem to be solved by the present invention is to prevent contamination such as that of a conventional metal heater, and also to have a poor thermal efficiency as in the case of an indirect heating method and a film adhesion to an infrared transmitting window. It is an object of the present invention to provide a semiconductor wafer heating apparatus which does not cause a problem and can prevent the corrosion of electrodes, the discharge between electrodes and the case between electrodes, and the leakage of current.

(課題を解決するための手段) 本発明は、抵抗発熱体が埋設され、容器内に設置され、
ウエハー加熱面が設けられたセラミックス製のヒーター
部と; このヒーター部の前記ウエハー加熱面以外の面に設けら
れ、前記容器との間で気密性シールを形成する凸状支持
部と; 前記抵抗発熱体へと接続され、前記容器の内部空間へと
実質的に露出しないように前記容器外へと取り出された
電極とを有する半導体ウエハー加熱装置に係るものであ
る。
(Means for Solving the Problems) In the present invention, a resistance heating element is embedded and installed in a container,
A ceramic heater portion provided with a wafer heating surface; a convex support portion provided on a surface other than the wafer heating surface of the heater portion and forming an airtight seal with the container; The present invention relates to a semiconductor wafer heating apparatus having an electrode connected to the body and taken out of the container so as not to be substantially exposed to the internal space of the container.

また、本発明は、前記ヒーター部と前記凸状支持部と
を、一体成形体をホットアイソスタティックプレスによ
り一体焼結することで上記の半導体ウエハー加熱装置を
製造する方法に係るものである。
Further, the present invention relates to a method for manufacturing the above semiconductor wafer heating apparatus by integrally sintering the integrally molded body of the heater part and the convex support part by hot isostatic pressing.

また、本発明は、ヒーター部用成形体と、凸状支持部用
成形体とをそれぞれ成形し、これらの各成形体を互いい
接合して接合体を作製し、この接合体を焼結してヒータ
ーと凸状支持部とを製造する、上記の半導体ウエハー加
熱装置を製造する方法に係るものである。
Further, the present invention is to mold a heater part molded body and a convex support part molded body, respectively, and bond these molded bodies to each other to produce a bonded body, and sinter this bonded body. The present invention relates to a method for manufacturing the above semiconductor wafer heating device, in which a heater and a convex supporting portion are manufactured.

また、本発明は、ヒーター部と凸状支持部とをそれぞれ
焼結により作製し、このヒーター部と凸状支持部とをガ
ラス接合又は拡散結合によって接合して一体化する、前
記の半導体ウエハー加熱装置の製造方法に係るものであ
る。
Further, the present invention provides the semiconductor wafer heating, wherein the heater part and the convex support part are produced by sintering, respectively, and the heater part and the convex support part are bonded and integrated by glass bonding or diffusion bonding. The present invention relates to a method for manufacturing a device.

(実施例) 第1図は、半導体製造用熱CVD装置に本実施例の加熱
装置2を取り付けた状態を示す断面図である。
(Embodiment) FIG. 1 is a sectional view showing a state in which the heating apparatus 2 of the present embodiment is attached to a thermal CVD apparatus for semiconductor production.

容器1の内部にはガス供給孔4から熱CVD用のガスが
供給され、吸引孔5から真空ポンプにより内部に空気が
排出される。加熱装置2は、円盤状ヒーター部3と円柱
状支持部6とを一体化した断面T字形のものである。円
盤状ヒーター部3は、緻密でガスタイトなセラミックス
の内部にタングステン、モリブデン系等の抵抗発熱体9
をスパイラル条に埋設してなり、その端部には電極7を
介して電力が供給され、ウエハー加熱面3aを例えば1100
℃程度にまで加熱することができる。現在ウエハーWは
例えば4〜8インチであるが、ウエハー加熱面3aはこの
ウエハーWの全体を加熱しうるだけの大きさとする。
Gas for thermal CVD is supplied to the inside of the container 1 from the gas supply hole 4, and air is exhausted to the inside from the suction hole 5 by a vacuum pump. The heating device 2 has a T-shaped cross section in which the disc-shaped heater portion 3 and the columnar support portion 6 are integrated. The disk-shaped heater portion 3 is made of a dense and gas-tight ceramic, and a resistance heating element 9 made of tungsten, molybdenum, or the like.
Is embedded in a spiral stripe, and electric power is supplied to the end of the spiral stripe through the electrode 7, and the wafer heating surface 3a is, for example, 1100.
It can be heated up to about ° C. At present, the wafer W is, for example, 4 to 8 inches, but the wafer heating surface 3a is made large enough to heat the entire wafer W.

円盤状ヒーター部3の上側には、上記したように円柱状
支持部6が一体化され、円柱状支持部6の外周面と容器
1との間がO−リング11により気密シールされている。
図中、14は水冷ジャケットである。そして、熱電対8と
二本の電極7とが円盤状ヒーター部3、円柱状支持部6
に埋設され、円柱状支持部6の上側端面から容器1外へ
と取り出される。
As described above, the columnar support portion 6 is integrated on the upper side of the disk-shaped heater portion 3, and the outer peripheral surface of the columnar support portion 6 and the container 1 are hermetically sealed by the O-ring 11.
In the figure, 14 is a water cooling jacket. The thermocouple 8 and the two electrodes 7 are the disk-shaped heater section 3 and the columnar support section 6.
And is taken out of the container 1 from the upper end surface of the cylindrical support portion 6.

本実施例の加熱装置によれば、従来の金属ヒーターの場
合のような汚染や、間接加熱方式の場合のような熱効率
の悪化の問題を解決できる。
According to the heating device of the present embodiment, it is possible to solve the problems such as the contamination as in the case of the conventional metal heater and the deterioration of the thermal efficiency as in the case of the indirect heating method.

しかも、電極7が支持部6中に埋設され、容器内空間40
内へと露出しないので、電極7の腐食、電極7からの汚
染、さらには、真空中での電極間又は電極と容器1との
間の放電、漏電のおそれがない。従って、電極7をシー
ルする特別のシール構造は不要であり、また電極材料と
してタングステン以外の高融点金属を使用できる。
Moreover, the electrode 7 is embedded in the support portion 6 and the space 40
Since it is not exposed to the inside, there is no risk of corrosion of the electrode 7, contamination from the electrode 7, and further, electric discharge between the electrodes in a vacuum or between the electrode and the container 1, and electric leakage. Therefore, a special sealing structure for sealing the electrode 7 is unnecessary, and a refractory metal other than tungsten can be used as the electrode material.

また、熱電対8も支持部6内へと埋設され、容器内空間
40へと露出しないので、熱電対をシールする特別のシー
ル構造を必要とせず、非常に有利である。即ち、本出願
人の研究によれば、特に真空中の場合、熱電対の周囲の
ガス分子の挙動は、大気圧〜1torrの真空状態において
は粘性流域にあるが、真空度が高まると分子流域に移行
し、これに伴って熱電対の周囲における熱移動の態様が
大幅に変化するため、正確な温度測定ができなくなるこ
とが判っている。また、粘性流域においても、圧力変動
が大きい場合は温度測定誤差が存在することが判ってい
る。この点、本実施例では、熱電対8が容器内空間40へ
と露出することなく外部へと接続されているので、上記
のような温度測定誤差の問題は生じない。
In addition, the thermocouple 8 is also embedded in the support portion 6, and
Since it is not exposed to 40, no special sealing structure for sealing the thermocouple is required, which is very advantageous. That is, according to the research conducted by the applicant, the behavior of gas molecules around a thermocouple is in a viscous flow region in a vacuum state of atmospheric pressure to 1 torr, especially in a vacuum, but when the degree of vacuum increases, the molecular flow region is increased. It has been found that accurate temperature measurement cannot be performed because the mode of heat transfer around the thermocouple changes significantly due to the shift to the above. It is also known that there is a temperature measurement error when the pressure fluctuation is large even in the viscous flow region. In this respect, in the present embodiment, since the thermocouple 8 is connected to the outside without being exposed to the space 40 inside the container, the above-mentioned problem of temperature measurement error does not occur.

また、円柱状支持部6を容器1に対して気密にシールす
ることにより、ヒーター部3を支持するので、ヒーター
部3を支持するための特別な支持部材を必要としない。
従って、加熱装置全体の表面積を小さくでき、表面吸着
ガスが少なく、高真空では表面吸着ガスを放出させる必
要があることから、高真空を利用する半導体製造装置に
おいて有利である。
Further, since the heater portion 3 is supported by hermetically sealing the cylindrical support portion 6 with respect to the container 1, no special support member for supporting the heater portion 3 is required.
Therefore, the surface area of the entire heating device can be reduced, the surface adsorption gas is small, and the surface adsorption gas needs to be released in high vacuum, which is advantageous in a semiconductor manufacturing apparatus utilizing high vacuum.

更に、本発明者の研究によれば、例えばグラファイト製
のカバーで円盤状ヒーターの側面を支持すると、この側
面から熱が逃げ、円盤状ヒーターの外縁部と内周部との
間で均熱を図るのが難しかった。これに対し、本実施例
では、側面方向への熱の逃げがないので、加熱面3aの均
熱化を図るのがより容易である。
Further, according to the research by the present inventor, when the side surface of the disk-shaped heater is supported by, for example, a graphite cover, heat escapes from this side surface, and heat is evenly distributed between the outer edge portion and the inner peripheral portion of the disk-shaped heater. It was difficult to plan. On the other hand, in this embodiment, since there is no escape of heat in the side surface direction, it is easier to achieve uniform heating of the heating surface 3a.

円盤状ヒーター部3の材質としては、シリコンナイトラ
イド、サイアロン、窒化アルミニウム等が好ましく、シ
リコンナイトライドやサイアロンが耐熱衝撃性の点で更
に好ましい。円柱状支持部6の材質としては、後述する
一体焼結の関係からヒーター部3と同一材質とすると好
ましいが、少なくとも緻密質セラミックスを使用すれ
ば、汚染のおそれが少ないので便利である。
As the material of the disk-shaped heater portion 3, silicon nitride, sialon, aluminum nitride, etc. are preferable, and silicon nitride and sialon are more preferable in terms of thermal shock resistance. It is preferable to use the same material as that of the heater portion 3 as the material of the cylindrical support portion 6 in consideration of the integral sintering which will be described later, but it is convenient to use at least dense ceramics because there is less risk of contamination.

加熱装置2を製造するには、ヒーター部3と支持部6と
の形状となるようにセラミックス粉末を一体成形し、こ
の成形体に予め電極7と熱電対8とを埋め込んでおき、
ホットアイソスタティックプレスにより一体焼結する。
In order to manufacture the heating device 2, ceramic powder is integrally molded into the shape of the heater part 3 and the support part 6, and the electrode 7 and the thermocouple 8 are previously embedded in this molded body,
It is integrally sintered by hot isostatic pressing.

容器1と支持部6との間のシールは、第1図に示すO−
リングの他、拡散接合、摩擦圧接、表面にスパッタリン
グで金属薄膜を設けたうえでの摩擦圧接、ガラス接合、
メタルバッキング等によることができる。
The seal between the container 1 and the supporting portion 6 is O- shown in FIG.
In addition to rings, diffusion bonding, friction welding, friction welding after forming a metal thin film on the surface by sputtering, glass joining,
This can be done with a metal backing or the like.

ウエハー加熱面3aは平滑面とすることが好ましく、特に
ウエハー加熱面3aにウエハーWが直接セットされる場合
には、平面度を500 μm以下としてヒーター部3と接す
るウエハーWの裏面へのデボジション用ガスの侵入を防
止する必要がある。
It is preferable that the wafer heating surface 3a is a smooth surface. Especially when the wafer W is directly set on the wafer heating surface 3a, the flatness is set to 500 μm or less and the debossing to the back surface of the wafer W in contact with the heater unit 3 is performed. It is necessary to prevent gas from entering.

ヒーター部3の内部に埋設される抵抗発熱体9として
は、高融点でありしかもSi3等との密着性に優れた
タングステン、モリブデン、白金等を使用することが適
当である。
As the resistance heating element 9 embedded in the heater portion 3, it is suitable to use tungsten, molybdenum, platinum or the like which has a high melting point and is excellent in adhesion to Si 3 N 4 or the like.

第2図の加熱装置12においては、円柱状支持部の代りに
円筒状支持部16を円盤状ヒーター部3と接合一体化し、
円筒状支持部16と容器1との間を気密にシールした。そ
して、電極7及び熱電対8の一端を円盤状ヒーター部3
中へと埋設し、それぞれ円筒状支持部16の筒内空間内へ
と取り出した。本実施例の加熱装置によって、第1図の
ものと同様の効果が得られる。
In the heating device 12 of FIG. 2, a cylindrical support portion 16 is joined and integrated with the disc-shaped heater portion 3 instead of the cylindrical support portion,
The space between the cylindrical support 16 and the container 1 was hermetically sealed. Then, one end of the electrode 7 and the thermocouple 8 is connected to the disk-shaped heater portion 3
They were buried inside and taken out into the space inside the cylinder of the cylindrical support portion 16, respectively. With the heating device of this embodiment, the same effect as that of FIG. 1 can be obtained.

加熱装置12を製造するには、上記したホットアイソスタ
ティックプレスを適用できる他、次の方法を好適に利用
できる。
In order to manufacture the heating device 12, the above hot isostatic press can be applied, and the following method can be preferably used.

(1) ヒーター部3を常圧焼結又はホットプレス焼結で
焼結し、その際、電極7と熱電対8とは予め成形体中に
埋設しておく。円筒状支持部16については、予め射出成
形又は押し出し成形、プレス成形、静水圧プレス成形
し、常圧焼結して製造する。そしてこれらの各焼結体を
気密にガラス接合する。
(1) The heater part 3 is sintered by pressureless sintering or hot press sintering, and at that time, the electrode 7 and the thermocouple 8 are embedded in the molded body in advance. The cylindrical support portion 16 is manufactured by previously performing injection molding, extrusion molding, press molding, isostatic press molding, and normal pressure sintering. Then, each of these sintered bodies is hermetically glass-bonded.

(2) ヒーター部用成形体と円筒状支持部用成形体とを
個別に押出成形、射出成形、プレス成形、静水圧プレス
成形等で成形し、1/100 〜10mmの寸法公差を持たせた
嵌メ合イにより常圧焼結するか、あるいは、ヒーター部
用成形体に円筒状支持部用成形体を充分な圧力で押しつ
け、加圧焼結する。
(2) The molded body for the heater section and the molded body for the cylindrical support section were individually molded by extrusion molding, injection molding, press molding, isostatic pressing, etc., and had a dimensional tolerance of 1/100 to 10 mm. The sintering is carried out under normal pressure by fitting, or the molded body for the heater portion is pressed against the molded body for the heater portion with a sufficient pressure to perform pressure sintering.

(3) ヒーター部3を上記(1)のように焼結し、円筒状支
持部16を金属又は金属の化合物で成形し、両者をガラス
接合によって気密に接合する。
(3) The heater part 3 is sintered as in the above (1), the cylindrical support part 16 is molded with a metal or a metal compound, and both are hermetically bonded by glass bonding.

円筒状支持部16の材質としては、上記のセラミックスの
他、金属、金属の化合物を使用することもできる。この
材質として緻密質セラミックスを使用すると、汚染のお
それが少ないので有利である。また、金属としては、半
導体ウエハーWの汚染につながらないものがよく、具体
的には加熱ヒーター部3に近い部分は、高温で使用可能
なタングステン、モリブデン、タンタル、チタンが好ま
しく、さらにO−リング11部の低温部にはステンレス、
アルミニウム等が好ましい。
As the material of the cylindrical supporting portion 16, in addition to the above ceramics, a metal or a compound of a metal can be used. The use of dense ceramics as this material is advantageous because there is less risk of contamination. The metal is preferably one that does not lead to contamination of the semiconductor wafer W. Specifically, the portion near the heater portion 3 is preferably tungsten, molybdenum, tantalum, or titanium that can be used at high temperature, and further the O-ring 11 Stainless steel in the low temperature part,
Aluminum or the like is preferable.

第3図は更に他の実施例を示す断面図である。FIG. 3 is a sectional view showing still another embodiment.

この例では、円盤状ヒーター部3の周縁部に、断面L字
形の支持部26を設け、この支持部26の水平方向に伸びる
延在部27と容器1との間で気密シールを行っている。
In this example, a supporting portion 26 having an L-shaped cross section is provided on the peripheral portion of the disc-shaped heater portion 3, and an airtight seal is provided between an extending portion 27 of the supporting portion 26 extending in the horizontal direction and the container 1. .

(1) 第1図における加熱装置2の円盤状ヒーター部3
と円柱状支持部6の一体部、第2図の加熱装置12におけ
るヒーター部3と円筒状支持部16の接合部は、いずれの
場合も容器1に固定する際、支持部を保持するため、一
体部、接合部に応力集中しやすく、破壊の危険性が生じ
るが、第3図に示す加熱装置22では円盤状ヒーター部3
の周縁部に断面L字形の支持部26を有するため、保持す
る面積が広く応力が分散し、一体部、接合部での破壊が
生じにくい特徴がある。
(1) Disk-shaped heater part 3 of heating device 2 in FIG.
Since the integral part of the cylindrical support part 6 and the joint part of the heater part 3 and the cylindrical support part 16 in the heating device 12 of FIG. 2 holds the support part when fixing it to the container 1 in any case, Stress tends to be concentrated on the integrated portion and the joint portion, and there is a risk of destruction. However, in the heating device 22 shown in FIG.
Since the supporting portion 26 having an L-shaped cross section is provided in the peripheral portion of the above, the holding area is wide and the stress is dispersed, so that the integral portion and the joint portion are less likely to be broken.

(2) 熱CVD等では、デポジョン後にウエハーW外の
面にCVD膜が付着し、これをプラズマによりクリーニ
ングする場合に、ヒーター凹面のA部にプラズマ用電極
を配置することができるため、プラズマ電極が容器1内
のガスの雰囲気にさらされない特徴がある。
(2) In thermal CVD or the like, when the CVD film adheres to the outer surface of the wafer W after the deposition and is cleaned with plasma, the plasma electrode can be arranged in the portion A of the concave surface of the heater. Is not exposed to the gas atmosphere in the container 1.

(3) ヒーター凹面のA部に冷却構造を取りつけること
により、冷却時の応答性を良好とすることができる。
(3) By mounting a cooling structure on the portion A of the concave surface of the heater, the response during cooling can be improved.

(4) ヒーター凹面のA部に、ヒーター部3のウエハー
Wチャック面の温度分布に合せて断熱、冷却手段を設
け、ウエハーWチャック面の温度分布をコントロールで
きる。
(4) The temperature distribution on the wafer W chuck surface can be controlled by providing heat insulating and cooling means in the portion A of the heater concave surface according to the temperature distribution on the wafer W chuck surface of the heater portion 3.

電極7の腐食及び半導体ウエハーWの汚染においては、
上記加熱装置2及び12と同様に良好な結果が得られる。
In the corrosion of the electrode 7 and the contamination of the semiconductor wafer W,
Good results are obtained as in the heating devices 2 and 12.

この加熱装置22を製造するには、ホットアイソスタティ
ックプレス法の他、上記(1)〜(3)の方法をいずれをも利
用できる。
In order to manufacture the heating device 22, any of the above methods (1) to (3) can be used in addition to the hot isostatic pressing method.

ウエハー加熱面の均熱性は、加熱装置2及び12の場合、
加熱面中心の温度よりも加熱面周縁部温度の方が低いた
め、支持部6及び16の径を変化させることにより伝熱面
積を制御し加熱面の均一性を得ることができる。
In the case of heating devices 2 and 12, the soaking property of the wafer heating surface is
Since the temperature of the peripheral portion of the heating surface is lower than the temperature of the center of the heating surface, it is possible to control the heat transfer area and obtain the uniformity of the heating surface by changing the diameters of the supporting portions 6 and 16.

加熱装置22では円盤状ヒーター部3の周縁部に断面L字
形の支持部26を有するため、支持部26の伝熱により加熱
面周縁部の放熱量が大きい。このため第3図の実施例で
は、ヒーター部3の外周部で発熱量を大きくした発熱体
を埋設した。
Since the heating device 22 has the supporting portion 26 having an L-shaped cross section at the peripheral portion of the disk-shaped heater portion 3, the amount of heat radiation at the peripheral portion of the heating surface is large due to the heat transfer of the supporting portion 26. Therefore, in the embodiment shown in FIG. 3, a heating element having a large heating value is embedded in the outer peripheral portion of the heater portion 3.

なお、上記の例において、熱電対以外の温度測定装置、
例えば放射温度計を使用できる。また、上記の例ではウ
エハー加熱面を下向きにし、ウエハーを図示しないピン
により下から支持して処理を行ったが、ウエハー加熱面
を上向きにしてもよい。
In the above example, a temperature measuring device other than a thermocouple,
For example, a radiation thermometer can be used. Further, in the above example, the wafer heating surface is directed downward and the wafer is supported from below by a pin (not shown) for processing, but the wafer heating surface may be directed upward.

上記の例では凸状支持部は、容器の天井側の壁面との間
でシールされていたが、凸状支持部の取り付け位置はこ
れには限定されず、容器の下側壁面又は側壁に取り付け
ることもできる。
In the above example, the convex support portion was sealed between the ceiling-side wall surface of the container, but the mounting position of the convex support portion is not limited to this, and the convex support portion is attached to the lower wall surface or side wall of the container. You can also

また、上記の例では、凸状支持部を、ウエハー加熱面の
反対側の背面に設けていたが、円盤状ヒーター部の側面
に設けることもできる。なお、ヒーター部の形状は、円
形ウエハーを均等に加熱するためには円盤状とするのが
好ましいが、他の形状、例えば四角盤状、六角盤状等と
してもよい。
Further, in the above example, the convex supporting portion is provided on the back surface opposite to the wafer heating surface, but it may be provided on the side surface of the disk-shaped heater portion. The shape of the heater portion is preferably a disk shape in order to uniformly heat the circular wafer, but may be another shape such as a square disk shape or a hexagonal disk shape.

本発明は、プラズマエッチング装置、光エッチング装置
等に対しても適用可能である。
The present invention can also be applied to a plasma etching apparatus, a photo etching apparatus, and the like.

(発明の効果) 本発明に係る半導体ウエハー加熱装置及びその製造方法
によれば、ヒーター部が容器内に設置されてウエハーを
直接加熱するために熱効率が高く、ヒーター部が、抵抗
発熱体の埋設されたセラミックスからなるので、金属ヒ
ーターの場合のように汚染を生じない。
(Effect of the Invention) According to the semiconductor wafer heating apparatus and the manufacturing method thereof according to the present invention, since the heater part is installed in the container to directly heat the wafer, the thermal efficiency is high, and the heater part is embedded with the resistance heating element. Since it is made of ceramics, it does not cause pollution unlike metal heaters.

そして、抵抗発熱体へと接続された電極が容器の内部空
間へと実質的に露出しないので、電極の腐食、電極から
の汚染のおそれがない。従って、電極をシールするため
の特別のシール構造は不要であり、電極材料としてタン
グステン以外の高融点金属を使用することもできる。
Further, since the electrode connected to the resistance heating element is not substantially exposed to the internal space of the container, there is no risk of corrosion of the electrode or contamination from the electrode. Therefore, a special sealing structure for sealing the electrodes is unnecessary, and a refractory metal other than tungsten can be used as the electrode material.

更に、凸状支持部と容器との間で気密性シールを形成す
るので、ヒーター部を支持するための特別な支持部材を
必要としない。従って、加熱装置全体を簡素化でき、表
面積を小さくできる。このことから表面吸着ガスを少な
くでき、高真空を利用する半導体製造装置において有利
である。
Furthermore, since an airtight seal is formed between the convex support part and the container, no special support member for supporting the heater part is required. Therefore, the entire heating device can be simplified and the surface area can be reduced. From this, the surface adsorption gas can be reduced, which is advantageous in a semiconductor manufacturing apparatus utilizing high vacuum.

【図面の簡単な説明】[Brief description of drawings]

第1図、第2図、第3図はそれぞれ本発明の実施例に係
る半導体ウエハー加熱装置を容器に取り付けた状態を示
す概略断面図、 第4図は従来の間接加熱方式による加熱装置を示す要部
断面図である。 1……容器 2,12,22 ……半導体ウエハー加熱装置 3……セラミックス製の円盤状ヒーター部 6……円柱状支持部 7……電極 8……熱電対 9……抵抗発熱体 11……O−リング 16……円筒状支持部 26……支持部 27……延在部 40……容器内空間 W……半導体ウエハー
1, 2 and 3 are schematic cross-sectional views showing a state in which a semiconductor wafer heating apparatus according to an embodiment of the present invention is attached to a container, and FIG. 4 shows a conventional indirect heating type heating apparatus. FIG. 1 …… Container 2,12,22 …… Semiconductor wafer heating device 3 …… Ceramic disk heater 6 …… Cylindrical support 7 …… Electrode 8 …… Thermocouple 9 …… Resistance heating element 11 …… O-ring 16 ... Cylindrical support 26 ... Support 27 ... Extension 40 ... Space inside container W ... Semiconductor wafer

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】抵抗発熱体が埋設され、容器内に設置さ
れ、ウエハー加熱面が設けられたセラミックス製のヒー
ター部と; このヒーター部の前記ウエハー加熱面以外の面に設けら
れ、前記容器との間で気密性シールを形成する凸状支持
部と; 前記抵抗発熱体へと接続され、前記容器の内部空間へと
実質的に露出しないように前記容器外へと取り出された
電極とを有する半導体ウエハー加熱装置。
1. A ceramic heater part in which a resistance heating element is embedded and installed in a container and provided with a wafer heating surface; and a container provided on a surface other than the wafer heating surface of the heater part and the container. A convex support that forms an airtight seal therebetween; and an electrode that is connected to the resistance heating element and that is taken out of the container so as not to be substantially exposed to the internal space of the container. Semiconductor wafer heating device.
【請求項2】前記ヒーター部内へと熱電対の一端を埋設
し、前記容器の内部空間へと前記熱電対が実質的に露出
しないようにこの電熱対の他端を前記容器外へと取り出
した、請求項1記載の半導体ウエハー加熱装置。
2. One end of a thermocouple is buried in the heater portion, and the other end of the thermocouple is taken out of the container so that the thermocouple is not substantially exposed to the internal space of the container. The semiconductor wafer heating device according to claim 1.
【請求項3】前記凸状支持部がセラミックスからなる、
請求項1又は2項記載の半導体ウエハー加熱装置。
3. The convex support portion is made of ceramics.
The semiconductor wafer heating apparatus according to claim 1 or 2.
【請求項4】前記凸状支持部が金属又は金属の化合物か
らなり、前記ヒーター部の前記ウエハー加熱面以外の面
に接合されている、請求項1又は2項記載の半導体ウエ
ハー加熱装置。
4. The semiconductor wafer heating apparatus according to claim 1, wherein the convex support portion is made of a metal or a metal compound and is bonded to a surface of the heater portion other than the wafer heating surface.
【請求項5】前記ヒーター部と前記凸状支持部とを、一
体成形体をホットアイソスタティックプレスにより一体
焼結することで製造する、請求項3記載の半導体ウエハ
ー加熱装置の製造方法。
5. The method of manufacturing a semiconductor wafer heating apparatus according to claim 3, wherein the heater part and the convex support part are manufactured by integrally sintering an integrally molded body by hot isostatic pressing.
【請求項6】前記ヒーター部用成形体と、前記凸状支持
部用成形体とをそれぞれ成形し、これらの各成形体を互
いに接合して接合体を作製し、この接合体を焼結して前
記ヒーター部と前記凸状支持部とを製造する、請求項3
記載の半導体ウエハー加熱装置の製造方法。
6. A molded body for the heater section and a molded body for the convex support section are respectively molded, and these molded bodies are bonded to each other to produce a bonded body, and the bonded body is sintered. The heater part and the convex support part are manufactured by
A method for manufacturing the semiconductor wafer heating apparatus described.
【請求項7】ヒーター部と凸状支持部とをそれぞれ焼結
により作製し、このヒーター部と凸状支持部とをガラス
接合又は拡散接合によって接合して一体化する、請求項
3記載の半導体ウエハー加熱装置の製造方法。
7. The semiconductor according to claim 3, wherein the heater part and the convex support part are produced by sintering, respectively, and the heater part and the convex support part are bonded and integrated by glass bonding or diffusion bonding. Wafer heating apparatus manufacturing method.
JP2190699A 1990-03-12 1990-07-20 Semiconductor wafer heating device and manufacturing method thereof Expired - Lifetime JPH0628258B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2190699A JPH0628258B2 (en) 1990-07-20 1990-07-20 Semiconductor wafer heating device and manufacturing method thereof
DE69111493T DE69111493T2 (en) 1990-03-12 1991-03-11 Wafer heaters for apparatus, for semiconductor manufacturing heating system with these heaters and manufacture of heaters.
EP91302010A EP0447155B1 (en) 1990-03-12 1991-03-11 Wafer heaters for use in semi-conductor-producing apparatus, heating units using such wafer heaters, and production of heaters
US07/668,161 US5231690A (en) 1990-03-12 1991-03-12 Wafer heaters for use in semiconductor-producing apparatus and heating units using such wafer heaters
US08/035,804 US5490228A (en) 1990-03-12 1993-03-23 Heating units for use in semiconductor-producing apparatuses and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2190699A JPH0628258B2 (en) 1990-07-20 1990-07-20 Semiconductor wafer heating device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH0478138A JPH0478138A (en) 1992-03-12
JPH0628258B2 true JPH0628258B2 (en) 1994-04-13

Family

ID=16262383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2190699A Expired - Lifetime JPH0628258B2 (en) 1990-03-12 1990-07-20 Semiconductor wafer heating device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPH0628258B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003257596A (en) * 2002-02-28 2003-09-12 Sumitomo Electric Ind Ltd Ceramic heater and semiconductor/liquid crystal manufacturing device using above heater
US7268321B2 (en) 2002-09-18 2007-09-11 Sumitomo Electric Industries, Ltd. Wafer holder and semiconductor manufacturing apparatus
US7491432B2 (en) 2002-10-24 2009-02-17 Sumitomo Electric Industries, Ltd. Ceramic susceptor for semiconductor manufacturing equipment

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Publication number Priority date Publication date Assignee Title
WO2001013423A1 (en) 1999-08-10 2001-02-22 Ibiden Co., Ltd. Semiconductor production device ceramic plate
JP2002313781A (en) 2001-04-11 2002-10-25 Sumitomo Electric Ind Ltd Substrate treating equipment
KR100634921B1 (en) 2001-04-13 2006-10-17 스미토모덴키고교가부시키가이샤 Joined ceramic article, substrate holding structure and apparatus for treating substrate
WO2004030411A1 (en) * 2002-09-27 2004-04-08 Sumitomo Electric Industries, Ltd. Wafer holder and semiconductor production system
US20040222210A1 (en) * 2003-05-08 2004-11-11 Hongy Lin Multi-zone ceramic heating system and method of manufacture thereof
JP4569077B2 (en) 2003-06-05 2010-10-27 住友電気工業株式会社 HOLDER FOR SEMICONDUCTOR OR LIQUID CRYSTAL MANUFACTURING DEVICE AND SEMICONDUCTOR OR LIQUID CRYSTAL MANUFACTURING DEVICE WITH THE SAME

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003257596A (en) * 2002-02-28 2003-09-12 Sumitomo Electric Ind Ltd Ceramic heater and semiconductor/liquid crystal manufacturing device using above heater
US7268321B2 (en) 2002-09-18 2007-09-11 Sumitomo Electric Industries, Ltd. Wafer holder and semiconductor manufacturing apparatus
US7491432B2 (en) 2002-10-24 2009-02-17 Sumitomo Electric Industries, Ltd. Ceramic susceptor for semiconductor manufacturing equipment

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