JP6403100B2 - Epitaxial growth apparatus and holding member - Google Patents

Epitaxial growth apparatus and holding member Download PDF

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JP6403100B2
JP6403100B2 JP2016011472A JP2016011472A JP6403100B2 JP 6403100 B2 JP6403100 B2 JP 6403100B2 JP 2016011472 A JP2016011472 A JP 2016011472A JP 2016011472 A JP2016011472 A JP 2016011472A JP 6403100 B2 JP6403100 B2 JP 6403100B2
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hole
susceptor
lift pin
growth apparatus
substrate
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JP2017135147A (en
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小林　武史
武史 小林
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Shin Etsu Handotai Co Ltd
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Priority to PCT/JP2017/001501 priority patent/WO2017130809A1/en
Priority to KR1020187015504A priority patent/KR102402754B1/en
Priority to CN201780005034.1A priority patent/CN108604539B/en
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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Description

本発明は、エピタキシャル成長装置及び保持部材に関する。   The present invention relates to an epitaxial growth apparatus and a holding member.

一般的な枚葉式のエピタキシャル成長装置は、例えば、炭化珪素によりコーティングされた黒鉛製、かつ、円盤状のサセプタと、そのサセプタを支持する石英製のサポートシャフトが内部に配置される反応炉を備える。反応炉内のサセプタは、基板が載置されるポケット部と、そのポケット部の表面と裏面を貫通する貫通孔を有する。また、サポートシャフトには、サセプタの下方からサセプタの裏面に向けて延びる支柱部と、その支柱部の上端部から延びてサセプタの貫通孔の下を横切るようにしてサセプタの裏面に接続するアーム部が備わる。このアーム部には、サセプタの貫通孔の下に、そのサセプタの貫通孔と同じ方向にアーム部を貫通する貫通孔が形成される。サセプタとアーム部に形成される貫通孔には、サセプタとの間で基板を受け渡す際に昇降動作するリフトピンが挿入され、これらの２つの貫通孔により昇降するリフトピンの傾きが定められる。   A typical single wafer epitaxial growth apparatus includes, for example, a reaction furnace in which a graphite-made susceptor coated with silicon carbide and a quartz support shaft that supports the susceptor are arranged. . The susceptor in the reaction furnace has a pocket portion on which the substrate is placed, and a through hole that penetrates the front and back surfaces of the pocket portion. The support shaft has a support column extending from the lower side of the susceptor toward the back surface of the susceptor, and an arm unit extending from the upper end of the support column and connecting to the back surface of the susceptor so as to cross under the through hole of the susceptor. Is provided. In this arm portion, a through-hole penetrating the arm portion in the same direction as the through-hole of the susceptor is formed below the through-hole of the susceptor. A lift pin that moves up and down when the substrate is transferred between the susceptor and the arm portion is inserted into the through hole formed in the susceptor and the arm portion, and the inclination of the lift pin that moves up and down is determined by these two through holes.

ここで、リフトピンの傾きを定める貫通孔を有するサセプタ（黒鉛製）とサポートシャフト（石英製）は、熱膨張率が大きく異なる。そのため、基板を反応炉に搬入すると、室温下の基板が高温の反応炉内に搬入されることにより反応炉内の温度が不安定となり、サセプタの貫通孔とサポートシャフトの貫通孔の位置関係が変化する。すると、これら２つの貫通孔が定めるリフトピンの傾きが不安定になり、リフトピンによりポケット部に載置される基板の位置にばらつきが生じる。そのため、ポケット部に載置された基板の周方向に形成される隙間（基板とポケット部との間の隙間）が基板の周方向で不均一となる。そして、このようにして載置された基板にエピタキシャル層を成長すると、基板の外周部においてエピタキシャル層の膜厚分布が悪化する。   Here, the susceptor (made of graphite) having a through hole that determines the inclination of the lift pin and the support shaft (made of quartz) are greatly different in thermal expansion coefficient. Therefore, when the substrate is carried into the reaction furnace, the temperature in the reaction furnace becomes unstable due to the substrate at room temperature being carried into the high temperature reaction furnace, and the positional relationship between the through hole of the susceptor and the through hole of the support shaft is Change. Then, the inclination of the lift pin defined by these two through holes becomes unstable, and the position of the substrate placed in the pocket portion by the lift pin varies. Therefore, a gap (gap between the substrate and the pocket portion) formed in the circumferential direction of the substrate placed in the pocket portion is not uniform in the circumferential direction of the substrate. When the epitaxial layer is grown on the substrate placed in this manner, the film thickness distribution of the epitaxial layer is deteriorated at the outer peripheral portion of the substrate.

そこで、ポケット部に載置される基板の位置を測定し、その測定結果からポケット部に載置される基板の位置のばらつきを抑制する方法がある。この方法では、基板をリフトピンに渡すためにサセプタの上方に基板を搬送するロボットがサセプタの上方に停止する位置を、ポケット部に前回載置された基板の位置に基づいて調節する。しかし、ポケット部に載置される基板は、基板１枚毎にポケット部に載置される位置が大きく変化する。よって、前回載置された基板の位置に基づいてロボットの位置を調節してもポケット部に載置される基板の位置のばらつきを十分に抑制することができない。   Therefore, there is a method of measuring the position of the substrate placed in the pocket portion and suppressing variations in the position of the substrate placed in the pocket portion from the measurement result. In this method, the position at which the robot that transports the substrate above the susceptor in order to pass the substrate to the lift pins stops above the susceptor is adjusted based on the position of the substrate previously placed in the pocket portion. However, the position of the substrate placed in the pocket portion varies greatly for each substrate. Therefore, even if the position of the robot is adjusted based on the position of the substrate placed last time, variation in the position of the substrate placed in the pocket portion cannot be sufficiently suppressed.

また、特許文献１には、石英製のサポートシャフトと黒鉛製のサセプタとの熱膨張率の差に基づくアーム部（サポートシャフト）とサセプタの貫通孔の位置関係の変化を抑制する方法が開示されている。特許文献１では、ポケット部に基板を搬送するために円弧状の板部材であるリフトリングが使用され、リフトリングの上下動はリフトピンを介して行われる。リフトピンは、自身の先端をリフトリングの下面に嵌合させるとともに、サセプタとアームの貫通孔に挿入され、リフトピンが上下動する際のぐらつきを抑える。更にサセプタの貫通孔をサセプタの半径方向に延びる長穴にし、黒鉛製のサセプタと石英製のアーム部の熱膨張率の差の影響でリフトピンが貫通孔に強く押し付けられるのを防いでいる。しかし、黒鉛製のリフトリングを用いると、結局は石英製のアーム部との熱膨張率の差の影響を解消できず、リフトピンの傾きが不安定化し、リフトリングに石英を用いると、黒鉛製のサセプタと吸光度が異なるためリフトリングの温度がサセプタより低くなり、基板の温度分布が不安定化する問題があった。加えて、基板をサセプタに載置する度にサセプタとリフトリングが接触して発塵が生じる結果、基板の大量のパーティクルが付着してしまう問題もあった。   Patent Document 1 discloses a method for suppressing a change in the positional relationship between an arm portion (support shaft) and a through-hole of a susceptor based on a difference in thermal expansion coefficient between a quartz support shaft and a graphite susceptor. ing. In Patent Document 1, a lift ring, which is an arcuate plate member, is used to transport a substrate to a pocket portion, and the lift ring is moved up and down via lift pins. The lift pin fits its tip to the lower surface of the lift ring and is inserted into the through hole of the susceptor and the arm to suppress wobbling when the lift pin moves up and down. Further, the through hole of the susceptor is formed as a long hole extending in the radial direction of the susceptor, thereby preventing the lift pin from being strongly pressed against the through hole due to the difference in thermal expansion coefficient between the graphite susceptor and the quartz arm portion. However, if a graphite lift ring is used, the effect of the difference in thermal expansion coefficient from the quartz arm part cannot be eliminated in the end, and the tilt of the lift pin becomes unstable. Since the absorbance is different from that of the susceptor, the temperature of the lift ring becomes lower than that of the susceptor, and the temperature distribution of the substrate becomes unstable. In addition, every time the substrate is placed on the susceptor, the susceptor and the lift ring come into contact with each other to generate dust, resulting in a problem that a large amount of particles on the substrate adhere.

そこで、特許文献２では、昇降するリフトピンのぐらつき（リフトピンの傾き）を安定させるために複数本のリフトピンを補助部材で互いに接続する方法が開示されている。特許文献２では、リフトピンの側面にねじ山を形成する一方で、補助部材にリフトピンを挿入する貫通孔を形成するとともに、その貫通孔の内周面にねじ溝を形成する。そして、補助部材の貫通孔に挿入したリフトピンを補助部材に対して相対的に回転させてリフトピンと補助部材を結合することで、複数本のリフトピンを補助部材で互いに接続し、リフトピンのぐらつきを安定させる。   Therefore, Patent Document 2 discloses a method in which a plurality of lift pins are connected to each other with an auxiliary member in order to stabilize the wobbling of the lift pins that move up and down (the tilt of the lift pins). In patent document 2, while forming a screw thread in the side surface of a lift pin, while forming the through-hole which inserts a lift pin in an auxiliary member, a thread groove is formed in the internal peripheral surface of the through-hole. Then, the lift pins inserted into the through holes of the auxiliary member are rotated relative to the auxiliary member to connect the lift pins and the auxiliary member, thereby connecting the plurality of lift pins to each other by the auxiliary member and stabilizing the wobble of the lift pins. Let

特開２００１−３１３３２９号公報JP 2001-313329 A 特開２０１４−２２０４２７号公報JP 2014-220427 A

しかし、特許文献２の方法では、反応炉内の温度変化によりリフトピンと補助部材が熱膨張・熱収縮を繰り返すと、ねじによるリフトピンと補助部材の結合が緩み、リフトピンの高さが変化してしまうため、ポケット部への基板の載置位置が変化する問題があった。また、リフトピンをサセプタとサポートシャフトのアーム部の貫通孔に貫通させる構造は従来と同じであるため、黒鉛製のサセプタと石英製のサポートシャフトのアーム部との熱膨張率の差の影響を解消することができず、ポケット部に載置される基板の位置のばらつきを十分に抑制することができなかった。   However, in the method of Patent Document 2, when the lift pin and the auxiliary member are repeatedly expanded and contracted due to a temperature change in the reaction furnace, the connection between the lift pin and the auxiliary member by the screw is loosened, and the height of the lift pin changes. For this reason, there is a problem that the mounting position of the substrate in the pocket portion changes. In addition, the structure that allows the lift pin to pass through the through hole of the arm part of the susceptor and the support shaft is the same as the conventional structure, eliminating the influence of the difference in thermal expansion coefficient between the graphite susceptor and the arm part of the quartz support shaft. Thus, the variation in the position of the substrate placed in the pocket portion could not be sufficiently suppressed.

本発明の課題は、リフトピンとの位置関係を維持してリフトピンを保持することが可能な保持部材を有するエピタキシャル成長装置及びその保持部材を提供することにある。   The subject of this invention is providing the epitaxial growth apparatus which has a holding member which can hold | maintain a lift pin, maintaining a positional relationship with a lift pin, and its holding member.

課題を解決するための手段及び発明の効果Means for Solving the Problems and Effects of the Invention

本発明のエピタキシャル成長装置は、
表裏を貫通する貫通孔を有して軸線回りに回転可能なサセプタと、
貫通孔に挿入されるリフトピンと、
軸線回りに位置するリング部と、リング部に接続する接続部を含み接続部からリング部に沿って延びて接続部を基点にリング部に向けて付勢する弾性部材とを有する保持部材と、
を備え、
保持部材は、リング部と弾性部材の間にリフトピンを挟んで保持することを特徴とする。 The epitaxial growth apparatus of the present invention is
A susceptor having a through-hole penetrating the front and back and rotatable about an axis;
Lift pins inserted into the through holes;
A holding member having a ring part positioned around the axis, and an elastic member including a connection part connected to the ring part and extending from the connection part along the ring part and biasing the connection part as a base point toward the ring part;
With
The holding member is characterized by holding a lift pin between the ring portion and the elastic member.

本発明のエピタキシャル成長装置では、弾性部材の付勢力によりリフトピンが弾性部材とリング部の間に挟まれて保持される。弾性部材の付勢力を利用してリフトピンが保持されるため、リフトピンを保持する保持部材（リング部と弾性部材）及びリフトピンが熱膨張・熱収縮を繰り返しても保持部材がリフトピンを保持する力が大きく緩むことがない。そのため、保持部材は、リフトピンを保持する位置を長期間維持したままリフトピンを保持することができる。   In the epitaxial growth apparatus of the present invention, the lift pin is sandwiched and held between the elastic member and the ring portion by the biasing force of the elastic member. Since the lift pin is held using the urging force of the elastic member, the holding member that holds the lift pin (ring part and elastic member) and the force that the holding member holds the lift pin even if the lift pin repeats thermal expansion and thermal contraction It does not loosen greatly. Therefore, the holding member can hold the lift pin while maintaining the position for holding the lift pin for a long time.

本発明の実施態様では、貫通孔は、軸線回りに複数形成され、複数の貫通孔には、リフトピンがそれぞれ挿入され、保持部材により複数のリフトピンが保持される。   In the embodiment of the present invention, a plurality of through holes are formed around the axis, lift pins are inserted into the plurality of through holes, and the plurality of lift pins are held by the holding member.

これによれば、保持部材により複数のリフトピンを保持することができ、リフトピンがぐらつくのを抑制することが可能となる。   According to this, a plurality of lift pins can be held by the holding member, and the lift pins can be prevented from wobbling.

本発明の実施態様では、サセプタの貫通孔は、第１貫通孔であり、サセプタに接続して第１貫通孔の下を横切るアーム部を有してサセプタを支持する支持部を備え、アーム部は、第１貫通孔に挿入されるリフトピンが貫通する第２貫通孔を有し、第２貫通孔は、サセプタの半径方向に延びる長穴である。   In an embodiment of the present invention, the through-hole of the susceptor is a first through-hole, and has a support portion that supports the susceptor by having an arm portion that is connected to the susceptor and crosses under the first through-hole. Has a second through hole through which a lift pin inserted into the first through hole passes, and the second through hole is a long hole extending in the radial direction of the susceptor.

これによれば、黒鉛製のサセプタと石英製のアーム部の熱膨張率の差の影響により、サセプタの第１貫通孔とリフトピンがアーム部の第２貫通孔の位置関係が変化しても、サセプタの半径方向へのリフトピンの傾きが不安定になるのを抑制できるとともに、サセプタの円周方向へのリフトピンの傾きを安定化させることができる。そのため、ポケット部に載置される基板の位置にばらつきが生じるのを抑制できる。   According to this, even if the positional relationship between the first through hole and the lift pin of the susceptor changes due to the difference in thermal expansion coefficient between the graphite susceptor and the quartz arm part, It is possible to suppress the tilt of the lift pin in the radial direction of the susceptor from becoming unstable, and to stabilize the tilt of the lift pin in the circumferential direction of the susceptor. Therefore, it is possible to suppress variations in the position of the substrate placed in the pocket portion.

本発明の実施態様では、アーム部は、サセプタの下方に位置する一端部と、サセプタに接続する他端部を有し、支持部は、軸線方向に延びて上端部が一端部に接続する支柱部を備え、保持部材は、支柱部回りに位置する。   In an embodiment of the present invention, the arm portion has one end portion located below the susceptor and the other end portion connected to the susceptor, and the support portion extends in the axial direction, and the upper end portion connects to the one end portion. The holding member is positioned around the support column.

これによれば、保持部材は、アーム部よりも全体的に下方に位置する。そのため、保持部材とサセプタとの間隔を広げることができ、保持部材がサセプタに載置される基板の温度分布に悪影響を及ぼすのを軽減できる。   According to this, the holding member is located generally below the arm portion. For this reason, the distance between the holding member and the susceptor can be increased, and the adverse effect of the holding member on the temperature distribution of the substrate placed on the susceptor can be reduced.

本発明の実施態様では、リフトピンは、第１貫通孔に引っ掛かることが可能な上部を有し、リフトピンは、上部が第１貫通孔に引っ掛かることによりサセプタに保持される。   In an embodiment of the present invention, the lift pin has an upper part that can be hooked in the first through hole, and the lift pin is held by the susceptor by the upper part being hooked in the first through hole.

具体的には、上部は、第１貫通孔を塞ぐようにサセプタに引っ掛かることが可能であり、リフトピンは、上部が第１貫通孔に引っ掛かることにより第１貫通孔を塞いだ状態でサセプタに保持される。   Specifically, the upper part can be hooked on the susceptor so as to close the first through hole, and the lift pin is held on the susceptor in a state where the upper part is hooked on the first through hole to close the first through hole. Is done.

これによれば、サセプタに載置した基板を加熱する際に基板を加熱する光が第１貫通孔から基板の裏面に漏れるのを防止し、基板が局所的に加熱されるのを防止できる。また、そのような基板にエピタキシャル層を成長させるガス等が第１貫通孔から基板の裏面に流れ込むのを防止し、基板の裏面に局所的なデポジションが生じるのを防止できる。   According to this, when heating the substrate placed on the susceptor, light for heating the substrate can be prevented from leaking from the first through hole to the back surface of the substrate, and the substrate can be prevented from being heated locally. Further, it is possible to prevent a gas or the like for growing an epitaxial layer on such a substrate from flowing into the back surface of the substrate from the first through hole, and to prevent local deposition from occurring on the back surface of the substrate.

本発明の実施態様では、サセプタは、黒鉛製又は炭化珪素製若しくは炭化珪素によりコーティングされた黒鉛製であり、保持部材は、炭化珪素製である。   In an embodiment of the present invention, the susceptor is made of graphite, silicon carbide, or graphite coated with silicon carbide, and the holding member is made of silicon carbide.

これによれば、リフトピンが挿入される第１貫通孔を有するサセプタと、その第１貫通孔に挿入されるリフトピンを保持する保持部材の熱膨張率の差を小さく又は熱膨張率を同じにできる。よって、第１貫通孔と保持部材の位置関係が大きく変化することでリフトピンの傾きが不安定になるのを抑制できる。   According to this, the difference in thermal expansion coefficient between the susceptor having the first through hole into which the lift pin is inserted and the holding member that holds the lift pin inserted into the first through hole can be reduced or the thermal expansion coefficient can be made the same. . Therefore, it can suppress that the inclination of a lift pin becomes unstable because the positional relationship of a 1st through-hole and a holding member changes a lot.

本発明の実施態様では、弾性部材は、接続部を含む板状部材である。   In the embodiment of the present invention, the elastic member is a plate-like member including a connection portion.

これによれば、簡易な構造でリフトピンを保持することができる。   According to this, the lift pin can be held with a simple structure.

本発明の実施態様では、リング部は、円状又は略円状に形成される。   In the embodiment of the present invention, the ring portion is formed in a circular shape or a substantially circular shape.

また、本発明の実施態様では、保持部材は、リング部と弾性部材の間にリフトピンの下端部を挟んでリフトピンを保持する。   In the embodiment of the present invention, the holding member holds the lift pin with the lower end portion of the lift pin sandwiched between the ring portion and the elastic member.

これによれば、リフトピンの上部が引っ掛かるサセプタの第１貫通孔とリフトピンを保持する保持部材により、リフトピンがリフトピンの両端部で保持され、リフトピンの傾きを安定させることが可能となる。   According to this, the lift pin is held at both ends of the lift pin by the first through hole of the susceptor on which the upper part of the lift pin is hooked and the lift pin, and the tilt of the lift pin can be stabilized.

また、本発明の保持部材は、
表裏を貫通する貫通孔を有して軸線回りに回転可能なサセプタの貫通孔に挿入されるリフトピンを保持する保持部材であって、
軸線回りに位置するリング部と、
リング部に接続する接続部を含み接続部からリング部に沿って延びて接続部を基点にリング部に向けて付勢する弾性部材と、
を備え、
リング部と弾性部材の間にリフトピンを挟んで保持することを特徴とする。 The holding member of the present invention is
A holding member for holding a lift pin inserted into a through-hole of a susceptor having a through-hole penetrating the front and back and rotatable around an axis,
A ring located around the axis;
An elastic member including a connecting portion connected to the ring portion, extending from the connecting portion along the ring portion and biasing the connecting portion as a base point toward the ring portion;
With
A lift pin is sandwiched and held between the ring portion and the elastic member.

本発明は、保持部材として構成したものである。上述のエピタキシャル成長装置の保持部材と同様にリフトピンを保持する位置を長期間維持したままリフトピンを保持することができる。   The present invention is configured as a holding member. Like the holding member of the epitaxial growth apparatus described above, the lift pin can be held while maintaining the position where the lift pin is held for a long period of time.

本発明の一例の気相成長装置の模式断面図。The schematic cross section of the vapor phase growth apparatus of an example of this invention. 図１のサセプタの模式平面図。The schematic plan view of the susceptor of FIG. 図１のサセプタとサポートシャフトの模式平面図（ただし、サセプタとサポートシャフトの位置関係を説明するためにサセプタを破線で示した図）。FIG. 2 is a schematic plan view of the susceptor and the support shaft in FIG. 1 (however, the susceptor is shown by a broken line in order to explain the positional relationship between the susceptor and the support shaft). 図１のサポートリングの模式斜視図。The model perspective view of the support ring of FIG. 図４Ａのサポートリングの模式底面図。4B is a schematic bottom view of the support ring of FIG. 4A. FIG. 図１のサセプタ、サポートシャフト及びサポートリングの模式底面図。The schematic bottom view of the susceptor of FIG. 1, a support shaft, and a support ring. 図５Ａの部分拡大図。The elements on larger scale of FIG. 5A. 比較例で使用した気相成長装置の模式断面図。The schematic cross section of the vapor phase growth apparatus used by the comparative example. 図６のサポートシャフトの模式平面図。The schematic plan view of the support shaft of FIG.

図１には、本発明のエピタキシャル成長装置の一例である枚葉式の気相成長装置１が示される。気相成長装置１により基板Ｗにエピタキシャル層が気相成長され、エピタキシャルウェーハが製造される。   FIG. 1 shows a single wafer type vapor phase growth apparatus 1 which is an example of an epitaxial growth apparatus of the present invention. The epitaxial layer is vapor-phase grown on the substrate W by the vapor phase growth apparatus 1, and an epitaxial wafer is manufactured.

気相成長装置１は反応炉２を備える。反応炉２の内部には、サセプタ３と、サセプタ３を支持するサポートシャフト４と、サセプタ３とサポートシャフト４を貫通するリフトピン５と、リフトピン５を保持するサポートリング６と、リフトピン５を支持するリフトピン支持部７が備わる。   The vapor phase growth apparatus 1 includes a reaction furnace 2. Inside the reaction furnace 2, a susceptor 3, a support shaft 4 that supports the susceptor 3, a lift pin 5 that passes through the susceptor 3 and the support shaft 4, a support ring 6 that holds the lift pin 5, and the lift pin 5 are supported. A lift pin support 7 is provided.

サセプタ３は、炭化珪素によりコーティングされた黒鉛製かつ円盤状の部材である。図２に示すようにサセプタ３は、サセプタ３の表面が円盤状に窪むポケット部３ａと、ポケット部３ａの表面からサセプタ３の裏面に向けてサセプタ３を貫通する複数の貫通孔３ｂを有する。ポケット部３ａは、基板Ｗの直径より数ミリ程度大きく、基板Ｗの厚みと同程度の深さにサセプタ３の上面が円盤状にくり貫かれた凹状である。ポケット部３ａの内側には基板Ｗが載置される。図１に戻って、貫通孔３ｂは、漏斗状の孔である。貫通孔３ｂは、上部Ｕと上部Ｕの下端に接続する下部Ｄを備える。上部Ｕは、上端から下端に向けて内径が縮径するテーパー状の孔である。下部Ｄは、上部Ｕの下端の内径に接続し、かつ、その内径と同一の円筒状の孔である。貫通孔３ｂは、図２に示すように平面視におけるポケット部３ａの中心Ｃ回りに等角度間隔に複数（３つ）形成される。図１では２つの貫通孔３ｂが図示され、サセプタ３は、ポケット部３ａに基板Ｗが載置された状態で鉛直方向に延びる軸線Ｏ回りに回転可能なように反応炉２内に配置される。   The susceptor 3 is a graphite and disk-shaped member coated with silicon carbide. As shown in FIG. 2, the susceptor 3 has a pocket portion 3 a in which the surface of the susceptor 3 is recessed in a disk shape, and a plurality of through holes 3 b that penetrate the susceptor 3 from the surface of the pocket portion 3 a toward the back surface of the susceptor 3. . The pocket portion 3a has a concave shape in which the upper surface of the susceptor 3 is cut into a disk shape having a depth approximately the same as the thickness of the substrate W, which is several millimeters larger than the diameter of the substrate W. A substrate W is placed inside the pocket portion 3a. Returning to FIG. 1, the through-hole 3b is a funnel-shaped hole. The through hole 3b includes an upper part U and a lower part D connected to the lower end of the upper part U. The upper portion U is a tapered hole whose inner diameter is reduced from the upper end toward the lower end. The lower part D is a cylindrical hole connected to the inner diameter of the lower end of the upper part U and having the same inner diameter. As shown in FIG. 2, a plurality of (three) through holes 3b are formed at equiangular intervals around the center C of the pocket portion 3a in plan view. In FIG. 1, two through holes 3b are illustrated, and the susceptor 3 is disposed in the reaction furnace 2 so as to be rotatable around an axis O extending in the vertical direction with the substrate W placed on the pocket portion 3a. .

サポートシャフト４は、サセプタ３を支持する石英製の支持部材である。サポートシャフト４は、サセプタ３の裏面側からサセプタ３を水平又は略水平に支持するように反応炉２内に配置される。サポートシャフト４は、サセプタ３の下方から軸線Ｏに沿うようにしてサセプタ３の裏面に向けて延びる支柱部４ａと、支柱部４ａから延びてサセプタ３の裏面に接続する複数（３つ）のアーム部４ｂを備える（図３参照）。支柱部４ａは、図１に示すように鉛直方向に延びる円柱状に形成され、上端部にアーム部４ｂが接続する。アーム部４ｂは、支柱部４ａの上端部に接続する一端部Ｅ１と、サセプタ３の裏面の外周部に接続する他端部Ｅ２と、一端部Ｅ１から延びてサセプタ３の貫通孔３ｂの下を横切るようにして他端部Ｅ２に接続する接続部Ｅ３を有する。接続部Ｅ３は、サセプタ３の貫通孔３ｂの下に対応する部分に軸線Ｏに沿うようにして接続部Ｅ３を貫通する貫通孔Ｈを備える。サポートシャフト４の平面視である図３に示すように貫通孔Ｈは、サセプタ３の半径方向が長径となる楕円状又は長穴状に形成される。また、貫通孔Ｈの大きさは、貫通孔Ｈの内側に貫通孔３ｂが収まる大きさとなる。   The support shaft 4 is a quartz support member that supports the susceptor 3. The support shaft 4 is disposed in the reaction furnace 2 so as to support the susceptor 3 horizontally or substantially horizontally from the back side of the susceptor 3. The support shaft 4 extends from the lower side of the susceptor 3 along the axis O toward the back surface of the susceptor 3, and a plurality of (three) arms that extend from the support column 4 a and connect to the back surface of the susceptor 3. A portion 4b is provided (see FIG. 3). As shown in FIG. 1, the support column 4a is formed in a columnar shape extending in the vertical direction, and the arm 4b is connected to the upper end. The arm portion 4b includes one end E1 connected to the upper end of the support column 4a, the other end E2 connected to the outer peripheral portion of the back surface of the susceptor 3, and extends from the one end E1 below the through hole 3b of the susceptor 3. A connection portion E3 is provided to connect to the other end portion E2 so as to cross. The connection portion E3 includes a through hole H that penetrates the connection portion E3 along the axis O at a portion corresponding to the bottom of the through hole 3b of the susceptor 3. As shown in FIG. 3, which is a plan view of the support shaft 4, the through hole H is formed in an elliptical shape or a long hole shape in which the radial direction of the susceptor 3 has a long diameter. Further, the size of the through hole H is such that the through hole 3b is accommodated inside the through hole H.

図１に戻って、サポートシャフト４の貫通孔Ｈと、サセプタ３の貫通孔３ｂにはリフトピン５が挿入される。リフトピン５は、サセプタ３との間で基板Ｗの受け渡しをする部材である。リフトピン５は、丸棒状の本体部５ａと、本体部５ａの上端に接続する頭部５ｂを備える。本体部５ａは、円柱状であり、その円柱状の直径は貫通孔３ｂの下部Ｄの内径より小さい。頭部５ｂは、本体部５ａの上端に接続する下端から上方に向けて拡径するテーパー状である。頭部５ｂは、貫通孔３ｂの上部Ｕに引っ掛かるようにして上部Ｕの内側に収まる。よって、リフトピン５は、頭部５ｂが貫通孔３ｂに保持されてサセプタ３に装着される。リフトピン５をサセプタ３に装着する場合には、例えば、サセプタ３の上方にリフトピン５を用意し、本体部５ａ側から貫通孔３ｂにリフトピン５を挿入し、貫通孔３ｂを通過して本体部５ａを貫通孔Ｈに挿入する。このようにリフトピン５を貫通孔３ｂ、Ｈに挿入させていくと、貫通孔３ｂの上部Ｕにリフトピン５の頭部５ｂが引っ掛かり、リフトピン５は貫通孔３ｂにぶら下がり、貫通孔３ｂの上部Ｕがリフトピン５の頭部５ｂで塞がれる。その一方で、貫通孔Ｈと貫通孔Ｈに挿入されるリフトピン５の間には、サセプタ３の半径方向に広い隙間が形成され、黒鉛製のサセプタ３と石英製のアーム部４ｂの熱膨張率の差により貫通孔３ｂと貫通孔Ｈの位置関係が大きく変化しても、貫通孔Ｈによってサセプタ３の半径方向へのリフトピン５の位置は拘束されないようになっている。それに対し、貫通孔Ｈとリフトピン５との間のサセプタ３の円周方向の隙間については、貫通孔３ｂとリフトピン５との隙間と同じ又は略同じにして、サセプタ３の円周方向へのリフトピン５の傾きのばらつきを抑制できるようになっている。このようにして本実施態様では複数（３つ）のリフトピン５がサセプタ３に保持される。   Returning to FIG. 1, lift pins 5 are inserted into the through holes H of the support shaft 4 and the through holes 3 b of the susceptor 3. The lift pins 5 are members that transfer the substrate W to and from the susceptor 3. The lift pin 5 includes a round bar-shaped main body 5a and a head 5b connected to the upper end of the main body 5a. The main body 5a has a cylindrical shape, and the diameter of the cylindrical shape is smaller than the inner diameter of the lower portion D of the through hole 3b. The head portion 5b has a tapered shape that increases in diameter upward from a lower end connected to the upper end of the main body portion 5a. The head 5b fits inside the upper portion U so as to be caught by the upper portion U of the through hole 3b. Therefore, the lift pin 5 is attached to the susceptor 3 with the head portion 5b held in the through hole 3b. When attaching the lift pin 5 to the susceptor 3, for example, the lift pin 5 is prepared above the susceptor 3, the lift pin 5 is inserted into the through hole 3b from the main body 5a side, passes through the through hole 3b, and passes through the main body 5a. Is inserted into the through hole H. When the lift pin 5 is inserted into the through holes 3b and H in this way, the head 5b of the lift pin 5 is caught on the upper portion U of the through hole 3b, the lift pin 5 is hung on the through hole 3b, and the upper portion U of the through hole 3b is The lift pin 5 is blocked by the head 5b. On the other hand, a wide gap is formed in the radial direction of the susceptor 3 between the through hole H and the lift pin 5 inserted into the through hole H, and the thermal expansion coefficient between the graphite susceptor 3 and the quartz arm portion 4b. Even if the positional relationship between the through hole 3b and the through hole H changes greatly due to the difference, the position of the lift pin 5 in the radial direction of the susceptor 3 is not restricted by the through hole H. On the other hand, the circumferential clearance of the susceptor 3 between the through hole H and the lift pin 5 is the same as or substantially the same as the clearance between the through hole 3b and the lift pin 5, and the lift pin in the circumferential direction of the susceptor 3 is used. The variation of the inclination of 5 can be suppressed. Thus, in this embodiment, a plurality (three) of lift pins 5 are held by the susceptor 3.

リフトピン５は、頭部５ｂがサセプタ３の貫通孔３ｂにより保持される一方で、リフトピン５の下端部は、サポートリング６により保持される。サポートリング６は、３つのリフトピン５をそれぞれ挟んで保持する炭化珪素製かつリング状の部材である。図４Ａに示すようにサポートリング６は、軸線Ｏ回りに位置するリング部６ａと、リング部６ａに接続する弾性変形可能な板状部材６ｂを有する。リング部６ａは、軸線Ｏを中心とする円状又は略円状に形成され、リング部６ａの内周面に板状部材６ｂが接続する。図４Ｂに示すように板状部材６ｂは、リング部６ａに接続する接続部６ｂ１と、接続部６ｂ１からリング部６ａに沿って延びる本体部６ｂ２を有する。接続部６ｂ１は、リング部６ａの内周面を基点に、その内周面から離れるようにリング部６ａの内側に向けて延びる板状に形成される。本体部６ｂ２は、接続部６ｂ１に接続してリング部６ａの内周面に沿って延びる板状に形成される。板状部材６ｂは、接続部６ｂ１での弾性変形に基づき本体部６ｂ２がリング部６ａの内周面に接近する方向に付勢される。サポートリング６は、リング部６ａの内周面と本体部６ｂ２の間にリフトピン５の側面を挟んで保持するようにリフトピン５に装着される。図５Ａには、サポートリング６により複数のリフトピン５が、それぞれリング部６ａと板状部材６ｂに挟まれて保持される状態が示される。図５Ｂに示すようにリフトピン５は、リング部６ａの内周面に接近する方向に付勢される板状部材６ｂとリング部６ａに挟まれて保持される。図１に示すようにリフトピン５は、下端部がサポートリング６により保持される。サポートリング６と貫通孔３ｂにより、リフトピン５の傾き（姿勢）が支持される。   In the lift pin 5, the head 5 b is held by the through hole 3 b of the susceptor 3, while the lower end of the lift pin 5 is held by the support ring 6. The support ring 6 is a silicon carbide and ring-shaped member that holds the three lift pins 5 therebetween. As shown in FIG. 4A, the support ring 6 includes a ring portion 6a positioned around the axis O and an elastically deformable plate member 6b connected to the ring portion 6a. The ring portion 6a is formed in a circular shape or a substantially circular shape centering on the axis O, and a plate-like member 6b is connected to the inner peripheral surface of the ring portion 6a. As shown in FIG. 4B, the plate-like member 6b has a connection part 6b1 connected to the ring part 6a and a main body part 6b2 extending from the connection part 6b1 along the ring part 6a. The connecting portion 6b1 is formed in a plate shape extending from the inner peripheral surface of the ring portion 6a to the inner side of the ring portion 6a so as to be away from the inner peripheral surface. The main body portion 6b2 is formed in a plate shape that is connected to the connection portion 6b1 and extends along the inner peripheral surface of the ring portion 6a. The plate-like member 6b is biased in a direction in which the main body 6b2 approaches the inner peripheral surface of the ring portion 6a based on elastic deformation at the connection portion 6b1. The support ring 6 is attached to the lift pin 5 so as to hold the side surface of the lift pin 5 between the inner peripheral surface of the ring portion 6a and the main body portion 6b2. FIG. 5A shows a state in which a plurality of lift pins 5 are sandwiched and held between the ring portion 6a and the plate-like member 6b by the support ring 6, respectively. As shown in FIG. 5B, the lift pin 5 is sandwiched and held between a plate-like member 6b and a ring portion 6a that are biased in a direction approaching the inner peripheral surface of the ring portion 6a. As shown in FIG. 1, the lower end of the lift pin 5 is held by a support ring 6. The tilt (posture) of the lift pin 5 is supported by the support ring 6 and the through hole 3b.

リフトピン５は、サセプタ３との間で基板Ｗの受け渡しをする際には、リフトピン支持部７により支持される。リフトピン支持部７は、リフトピン５の下端を支持してリフトピン５を昇降させる。リフトピン支持部７は、支柱部４ａを囲む筒状部７ａと、筒状部７ａの上端部から放射状に延びてリフトピン５の下端の近傍に位置する複数のアーム７ｂと、アーム７ｂの上端に接続してリフトピン５の下端を支持するための支持台７ｃを有する。   The lift pin 5 is supported by the lift pin support portion 7 when the substrate W is transferred to and from the susceptor 3. The lift pin support portion 7 supports the lower end of the lift pin 5 and raises and lowers the lift pin 5. The lift pin support portion 7 is connected to the cylindrical portion 7a surrounding the column portion 4a, a plurality of arms 7b extending radially from the upper end portion of the cylindrical portion 7a and positioned near the lower end of the lift pin 5, and the upper end of the arm 7b. And a support base 7c for supporting the lower end of the lift pin 5.

筒状部７ａ及び支柱部４ａの下端部にはそれぞれ駆動部８が接続される。駆動部８は、支柱部４ａと筒状部７ａを独立して作動させる駆動手段（例えば、モーターやアクチュエーター）として構成される。駆動部８は、支柱部４ａを軸線Ｏ回りに回転可能であり、軸線Ｏに沿うように支柱部４ａと筒状部７ａをそれぞれ独立して上下方向に移動可能である。例えば、図１のポケット部３ａに基板Ｗが載置されていない状態で駆動部８が筒状部７ａを上昇させると、筒状部７ａとともに支持台７ｃが上昇する。すると、支持台７ｃがリフトピン５の下端を支持してリフトピン５を上昇させ、リフトピン５が貫通孔３ｂから突出する。貫通孔３ｂから突出したリフトピン５を下降させる場合には、駆動部８が筒状部７ａを下降させることで、リフトピン５が貫通孔３ｂにぶら下がる。   The drive part 8 is connected to the lower end part of the cylindrical part 7a and the support | pillar part 4a, respectively. The drive unit 8 is configured as a drive unit (for example, a motor or an actuator) that operates the column unit 4a and the cylindrical unit 7a independently. The drive part 8 can rotate the support | pillar part 4a around the axis line O, and can move the support | pillar part 4a and the cylindrical part 7a independently in the up-down direction along the axis line O, respectively. For example, when the drive unit 8 raises the cylindrical portion 7a in a state where the substrate W is not placed in the pocket portion 3a of FIG. 1, the support base 7c rises together with the cylindrical portion 7a. Then, the support base 7c supports the lower end of the lift pin 5, raises the lift pin 5, and the lift pin 5 protrudes from the through-hole 3b. When the lift pin 5 protruding from the through hole 3b is lowered, the drive unit 8 lowers the cylindrical portion 7a, so that the lift pin 5 is suspended from the through hole 3b.

図１に示すように反応炉２の外側には反応炉２の左右にガス供給管９とガス排出管１０が配置される。また、反応炉２の上下に複数のランプ１１が配置される。   As shown in FIG. 1, a gas supply pipe 9 and a gas discharge pipe 10 are disposed outside the reaction furnace 2 on the left and right sides of the reaction furnace 2. A plurality of lamps 11 are disposed above and below the reaction furnace 2.

ガス供給管９は、反応炉２の水平方向の一端側（図１左側）に位置し、反応炉２内に各種のガスを略水平に供給する。ガス供給管９は、例えば、気相成長時には反応炉２内に気相成長ガスを供給する。気相成長ガスは、例えば、シリコン単結晶膜の原料となる原料ガスと、原料ガスを希釈するキャリアガスと、単結晶膜に導電型を付与するドーパントガスを有する。   The gas supply pipe 9 is located on one end side (left side in FIG. 1) of the reaction furnace 2 in the horizontal direction, and supplies various gases into the reaction furnace 2 substantially horizontally. For example, the gas supply pipe 9 supplies a vapor phase growth gas into the reaction furnace 2 during vapor phase growth. The vapor phase growth gas includes, for example, a source gas that is a raw material for the silicon single crystal film, a carrier gas that dilutes the source gas, and a dopant gas that imparts conductivity to the single crystal film.

ガス排出管１０は、反応炉２の水平方向の他端側（図示右側）に位置し、反応炉２内のガスを反応炉２外に排出する。ガス排出管１０は、基板Ｗを通過した気相成長ガス等を排出する。   The gas discharge pipe 10 is located on the other end side (right side in the drawing) of the reaction furnace 2 in the horizontal direction, and discharges the gas in the reaction furnace 2 to the outside of the reaction furnace 2. The gas discharge pipe 10 discharges vapor phase growth gas or the like that has passed through the substrate W.

ランプ１１は、反応炉２の上下に複数配置され、気相成長時に反応炉２内を加熱して反応炉２内に位置する基板Ｗ等の温度を調節する熱源となる。   A plurality of lamps 11 are arranged above and below the reaction furnace 2 and serve as a heat source for adjusting the temperature of the substrate W and the like located in the reaction furnace 2 by heating the inside of the reaction furnace 2 during vapor phase growth.

以上、気相成長装置１の主要な各部を説明した。次に、図示しない搬送ロボットにより反応炉２内に搬送された基板Ｗをサセプタ３のポケット部３ａに載置させる工程を説明する。基板Ｗは、図示しない搬送ロボットによりサセプタ３の上方に搬送され、サセプタ３の上方に搬送された基板Ｗは、例えば、次のようにしてポケット部３ａに載置される。   The main parts of the vapor phase growth apparatus 1 have been described above. Next, a process of placing the substrate W transferred into the reaction furnace 2 by a transfer robot (not shown) in the pocket portion 3a of the susceptor 3 will be described. The substrate W is transported above the susceptor 3 by a transport robot (not shown), and the substrate W transported above the susceptor 3 is placed in the pocket portion 3a as follows, for example.

搬送ロボットによりサセプタ３の上方に基板Ｗが搬送されると、駆動部８が筒状部７ａを上昇させ、貫通孔３ｂから突出するようにリフトピン５を持ち上げる。リフトピン５は、頭部５ｂの上端面が基板Ｗの裏面に到達するまで上昇し、その上端面で基板Ｗの裏面を支持して基板Ｗを受け取る。リフトピン５が基板Ｗを受け取ると、駆動部８は筒状部７ａを下降させてリフトピン５を下降させる。すると、リフトピン５に支持された基板Ｗが下降し、基板Ｗがポケット部３ａに載置される。リフトピン５が降下して基板Ｗがポケット部３ａに載置されると、リフトピン５の頭部５ｂが基板Ｗの裏面から離れるように下降する。すると、リフトピン５は、頭部５ｂが貫通孔３ｂに引っ掛かるように貫通孔３ｂにぶら下がり、リフトピン５の下端を支持した支持台７ｃがリフトピン５から離れる（図１参照）。   When the substrate W is transported above the susceptor 3 by the transport robot, the drive unit 8 raises the cylindrical portion 7a and lifts the lift pin 5 so as to protrude from the through hole 3b. The lift pins 5 are raised until the upper end surface of the head 5b reaches the back surface of the substrate W, and the upper surface of the lift pin 5 supports the back surface of the substrate W to receive the substrate W. When the lift pin 5 receives the substrate W, the drive unit 8 lowers the lift pin 5 by lowering the cylindrical portion 7a. Then, the substrate W supported by the lift pins 5 is lowered, and the substrate W is placed in the pocket portion 3a. When the lift pin 5 is lowered and the substrate W is placed in the pocket portion 3a, the head 5b of the lift pin 5 is lowered so as to be separated from the back surface of the substrate W. Then, the lift pin 5 hangs from the through hole 3b so that the head 5b is caught by the through hole 3b, and the support base 7c that supports the lower end of the lift pin 5 is separated from the lift pin 5 (see FIG. 1).

以上のようにして基板Ｗがサセプタ３のポケット部３ａに搬送される。その後、駆動部８が支柱部４ａを軸線Ｏ回りに回転させる。これにより、サセプタ３及びサセプタ３に載置された基板Ｗを軸線Ｏ回りに回転させ、回転する基板Ｗの表面に気相成長ガスを供給して基板Ｗにエピタキシャル層を成長し、エピタキシャルウェーハが製造される。   As described above, the substrate W is transferred to the pocket portion 3 a of the susceptor 3. Thereafter, the drive unit 8 rotates the support column 4a around the axis O. As a result, the susceptor 3 and the substrate W placed on the susceptor 3 are rotated about the axis O, and a vapor phase growth gas is supplied to the surface of the rotating substrate W to grow an epitaxial layer on the substrate W. Manufactured.

このようにして製造されるエピタキシャルウェーハは、ポケット部３ａに載置される基板Ｗの位置により基板Ｗに供給される気相成長ガスの流れが変化し、基板Ｗに成長させるエピタキシャル層の膜厚に影響が生じる。ポケット部３ａに載置された基板Ｗの周方向に形成される隙間（基板Ｗとポケット部３ａの隙間）が基板Ｗの周方向で不均一となった状態で基板Ｗにエピタキシャル層を成長すると、基板Ｗの外周部でエピタキシャル層の膜厚分布が悪化する。   In the epitaxial wafer manufactured in this way, the flow of the vapor growth gas supplied to the substrate W changes depending on the position of the substrate W placed in the pocket portion 3a, and the film thickness of the epitaxial layer grown on the substrate W is increased. Will be affected. When an epitaxial layer is grown on the substrate W in a state where a gap formed in the circumferential direction of the substrate W placed in the pocket portion 3a (a gap between the substrate W and the pocket portion 3a) is not uniform in the circumferential direction of the substrate W The film thickness distribution of the epitaxial layer deteriorates at the outer periphery of the substrate W.

よって、ポケット部３ａとの隙間が基板Ｗの周方向で均一となるように基板Ｗがポケット部３ａに載置されることが望ましい。ここで、ポケット部３ａに載置される基板Ｗは、基板Ｗの裏面がリフトピン５で支持された状態でポケット部３ａに搬送される。そのため、基板Ｗがポケット部３ａに載置される位置は、基板Ｗをポケット部３ａに搬送するリフトピン５の影響を受ける。例えば、リフトピン５により基板Ｗを支持する場合には、基板Ｗの荷重によりリフトピン５がぐらつくことでポケット部３ａに載置される基板Ｗの位置にばらつきが生じるおそれがある。   Therefore, it is desirable that the substrate W be placed on the pocket portion 3a so that the gap with the pocket portion 3a is uniform in the circumferential direction of the substrate W. Here, the substrate W placed in the pocket portion 3 a is transported to the pocket portion 3 a in a state where the back surface of the substrate W is supported by the lift pins 5. Therefore, the position where the substrate W is placed in the pocket portion 3a is affected by the lift pins 5 that transport the substrate W to the pocket portion 3a. For example, when the substrate W is supported by the lift pins 5, the lift pins 5 may wobble due to the load of the substrate W, so that the position of the substrate W placed in the pocket portion 3 a may vary.

そこで、図５Ａ及び図５Ｂに示すようにリフトピン５の姿勢が安定するようにリング部６ａと板状部材６ｂでリフトピン５の下端部を挟むことでリフトピン５のぐらつきを抑制する。ここで、板状部材６ｂは、図５Ｂの接続部６ｂ１を基点に本体部６ｂ２がリング部６ａに向けて付勢し、この付勢力を利用してリフトピン５が本体部６ｂ２とリング部６ａに挟まれて保持される。よって、室温下の基板Ｗが高温の反応炉２内に搬入される等により反応炉２内の温度が不安定になり、リフトピン５を保持するリング部６ａと板状部材６ｂが熱膨張・熱収縮を繰り返しても、それらがリフトピン５を保持する力は大きく緩まない。そのため、リング部６ａと板状部材６ｂがリフトピン５を保持する位置を維持したままリフトピン５を保持することができる。   Therefore, as shown in FIGS. 5A and 5B, wobbling of the lift pin 5 is suppressed by sandwiching the lower end portion of the lift pin 5 between the ring portion 6a and the plate-like member 6b so that the posture of the lift pin 5 is stabilized. Here, in the plate-like member 6b, the main body portion 6b2 is urged toward the ring portion 6a with the connection portion 6b1 in FIG. 5B as a base point, and the lift pin 5 is applied to the main body portion 6b2 and the ring portion 6a using this urging force. It is sandwiched and held. Therefore, the temperature in the reaction furnace 2 becomes unstable, for example, when the substrate W at room temperature is carried into the high-temperature reaction furnace 2, and the ring portion 6 a and the plate-like member 6 b that hold the lift pins 5 are thermally expanded / heated. Even if the contraction is repeated, the force for holding the lift pins 5 does not loosen greatly. Therefore, the lift pin 5 can be held while maintaining the position where the ring portion 6 a and the plate-like member 6 b hold the lift pin 5.

また、リフトピン５が挿入されるアーム部４ｂの貫通孔Ｈとリフトピン５の間にはサセプタ３の半径方向に延びる長穴が形成され、貫通孔Ｈによってサセプタ３の半径方向へのリフトピン５の位置は拘束されないようになっている。それに対し、貫通孔Ｈとリフトピン５との間のサセプタ３の円周方向の隙間については、貫通孔３ｂとリフトピン５との隙間と同じ又は略同じにして、サセプタ３の円周方向へのリフトピン５の傾きのばらつきを抑制できるようにする。よって、黒鉛製のサセプタ３と石英製のアーム部４ｂの熱膨張率の差により貫通孔３ｂと貫通孔Ｈの位置関係が大きく変化して、リフトピン５の姿勢（傾き）が不安定になるのを抑制できる。そして、リフトピン５が挿入される貫通孔３ｂを有するサセプタ３が黒鉛製であり、貫通孔３ｂに挿入されるリフトピン５を保持するサポートリング６が炭化珪素製である。それ故、サセプタ３とサポートリング６の熱膨張率の差を小さくすることができ、反応炉２内の温度変化などにより貫通孔３ｂとサポートリング６の位置関係が大きく変化するのを抑制できる。その結果、リフトピン５の傾きが不安定になるのを抑制できる。なお、黒鉛製のサセプタ３に代えて炭化珪素製のサセプタを用いると、より効果的である。   Further, an elongated hole extending in the radial direction of the susceptor 3 is formed between the through hole H of the arm portion 4b into which the lift pin 5 is inserted and the lift pin 5, and the position of the lift pin 5 in the radial direction of the susceptor 3 is formed by the through hole H. Is not restrained. On the other hand, the circumferential clearance of the susceptor 3 between the through hole H and the lift pin 5 is the same as or substantially the same as the clearance between the through hole 3b and the lift pin 5, and the lift pin in the circumferential direction of the susceptor 3 is used. The variation in the inclination of 5 can be suppressed. Therefore, the positional relationship between the through hole 3b and the through hole H changes greatly due to the difference in thermal expansion coefficient between the graphite susceptor 3 and the quartz arm portion 4b, and the posture (tilt) of the lift pin 5 becomes unstable. Can be suppressed. The susceptor 3 having the through hole 3b into which the lift pin 5 is inserted is made of graphite, and the support ring 6 that holds the lift pin 5 inserted into the through hole 3b is made of silicon carbide. Therefore, the difference in coefficient of thermal expansion between the susceptor 3 and the support ring 6 can be reduced, and the positional relationship between the through hole 3b and the support ring 6 can be suppressed from changing greatly due to a temperature change in the reaction furnace 2 or the like. As a result, it is possible to suppress the inclination of the lift pin 5 from becoming unstable. Note that it is more effective to use a susceptor made of silicon carbide instead of the susceptor 3 made of graphite.

以上から、本発明の実施態様では、リフトピン５の傾きが不安定になるのが抑制され、サセプタ３のポケット部３ａに載置される基板Ｗの位置がばらつくのを抑制することができる。   From the above, in the embodiment of the present invention, it is possible to suppress the tilt of the lift pin 5 from becoming unstable, and to prevent the position of the substrate W placed in the pocket portion 3a of the susceptor 3 from varying.

本発明の効果を確認するために以下に示す実験を行った。以下において、実施例と比較例を挙げて本発明を具体的に説明するが、これらは本発明を限定するものではない。   In order to confirm the effect of the present invention, the following experiment was conducted. Hereinafter, the present invention will be specifically described with reference to Examples and Comparative Examples, but these do not limit the present invention.

（実施例）
直径３００ｍｍのシリコン単結晶基板である基板Ｗと気相成長装置１を用意し、用意した基板Ｗと気相成長装置１を用いて気相成長装置１のサセプタ３のポケット部３ａに基板Ｗを載置し、載置した基板Ｗにエピタキシャル層を成長してエピタキシャルウェーハを製造した。そして、製造されたエピタキシャルウェーハのエピタキシャル層の外周部の膜厚分布に基づいて、そのエピタキシャルウェーハの基板Ｗの中心がポケット部３ａの中心Ｃからずれた距離を載置ズレ量として測定した。このようにして１００枚のエピタキシャルウェーハを製造し、製造したエピタキシャルウェーハから載置ズレ量を取得し、載置ズレ量の平均値及び標準偏差を算出した。なお、載置ズレ量の具体的な測定方法としては、特開２０１４−１２７５９５号公報に開示される方法を使用した。 (Example)
A substrate W, which is a silicon single crystal substrate having a diameter of 300 mm, and the vapor phase growth apparatus 1 are prepared, and the substrate W is placed in the pocket portion 3a of the susceptor 3 of the vapor phase growth apparatus 1 using the prepared substrate W and the vapor phase growth apparatus 1. The epitaxial layer was grown on the mounted substrate W to manufacture an epitaxial wafer. And based on the film thickness distribution of the outer peripheral part of the epitaxial layer of the manufactured epitaxial wafer, the distance which the center of the board | substrate W of the epitaxial wafer shifted | deviated from the center C of the pocket part 3a was measured as mounting displacement amount. Thus, 100 epitaxial wafers were manufactured, the amount of placement deviation was acquired from the produced epitaxial wafers, and the average value and standard deviation of the amount of placement deviation were calculated. In addition, as a specific method for measuring the amount of mounting displacement, a method disclosed in Japanese Patent Application Laid-Open No. 2014-127595 was used.

（比較例）
比較例では、次に示す構成以外は気相成長装置１と同様の気相成長装置１０１（図６と図７参照）を用いてエピタキシャルウェーハを製造した。以下、気相成長装置１０１の説明をするが、気相成長装置１と同じ構成は同じ符号を付して説明を省略し、特有の構成のみを説明する。気相成長装置１０１は、気相成長装置１からサポートリング６を取り外し、サポートシャフト４の代わりにサポートシャフト１０４を取り付けたものである。サポートシャフト１０４は、サポートシャフト４の貫通孔Ｈの形状を長穴から長穴より小さい円筒状の貫通孔Ｈ１に代えたものであり、貫通孔３ｂ、Ｈ１に挿入されたリフトピン５は、貫通孔３ｂ、Ｈ１によりリフトピン５の傾きが定められる。このような気相成長装置１０１を使用する以外は、実施例と同様の条件にして１００枚のエピタキシャルウェーハを製造し、載置ズレ量の平均値及び標準偏差を算出した。 (Comparative example)
In the comparative example, an epitaxial wafer was manufactured using a vapor phase growth apparatus 101 (see FIGS. 6 and 7) similar to the vapor phase growth apparatus 1 except for the following configuration. Hereinafter, although the vapor phase growth apparatus 101 will be described, the same components as those of the vapor phase growth apparatus 1 are denoted by the same reference numerals and description thereof will be omitted, and only the specific configurations will be described. In the vapor phase growth apparatus 101, the support ring 6 is removed from the vapor phase growth apparatus 1 and a support shaft 104 is attached instead of the support shaft 4. The support shaft 104 is obtained by changing the shape of the through hole H of the support shaft 4 from a long hole to a cylindrical through hole H1 smaller than the long hole, and the lift pin 5 inserted into the through holes 3b and H1 has a through hole. The inclination of the lift pin 5 is determined by 3b and H1. Except for using such a vapor phase growth apparatus 101, 100 epitaxial wafers were manufactured under the same conditions as in the example, and the average value and the standard deviation of the amount of displacement were calculated.

実施例及び比較例で得られた測定結果は次のようになった。実施例では、載置ズレ量の平均値が５２μｍ、載置ズレ量の標準偏差が２６μｍであるのに対して、比較例では、載置ズレ量の平均値が１４８μｍ、載置ズレ量の標準偏差が７９μｍである。そのため、実施例では、ポケット部３ａに載置される基板Ｗの位置がばらつくのを比較例より低減することができた。   The measurement results obtained in Examples and Comparative Examples were as follows. In the embodiment, the average value of the displacement amount is 52 μm and the standard deviation of the displacement amount is 26 μm, whereas in the comparative example, the average value of the displacement amount is 148 μm and the standard of the displacement amount. The deviation is 79 μm. Therefore, in the example, the variation in the position of the substrate W placed in the pocket portion 3a can be reduced as compared with the comparative example.

以上、本発明の実施例を説明したが、本発明はその具体的な記載に限定されることなく、例示した構成等を技術的に矛盾のない範囲で適宜組み合わせて実施することも可能であるし、またある要素、処理を周知の形態に置き換えて実施することもできる。   The embodiments of the present invention have been described above. However, the present invention is not limited to the specific description, and the illustrated configurations and the like can be appropriately combined within a technically consistent range. In addition, certain elements and processes may be replaced with known forms.

１ 気相成長装置 ２ 反応炉
３ サセプタ ３ｂ 貫通孔（第１貫通孔）
４ サポートシャフト（支持部） ４ａ 支柱部
４ｂ アーム部 Ｈ 貫通孔（第２貫通孔）
５ リフトピン ６ サポートリング（保持部材）
６ａ リング部 ６ｂ 板状部材（弾性部材）
７ リフトピン支持部 Ｗ 基板
Ｏ 軸線 DESCRIPTION OF SYMBOLS 1 Vapor growth apparatus 2 Reactor 3 Susceptor 3b Through-hole (1st through-hole)
4 Support shaft (support part) 4a Supporting part 4b Arm part H Through hole (second through hole)
5 Lift pin 6 Support ring (holding member)
6a Ring part 6b Plate member (elastic member)
7 Lift pin support part W Substrate O Axis

Claims (11)

表裏を貫通する貫通孔を有して軸線回りに回転可能なサセプタと、
前記貫通孔に挿入されるリフトピンと、
前記軸線回りに位置するリング部と、前記リング部に接続する接続部を含み前記接続部から前記リング部に沿って延びて前記接続部を基点に前記リング部に向けて付勢する弾性部材とを有する保持部材と、
前記保持部材は、前記リング部と前記弾性部材の間に前記リフトピンを挟んで保持することを特徴とするエピタキシャル成長装置。 A susceptor having a through-hole penetrating the front and back and rotatable about an axis;
Lift pins inserted into the through holes;
A ring portion positioned around the axis; and an elastic member that includes a connection portion connected to the ring portion, extends from the connection portion along the ring portion, and biases the connection portion toward the ring portion. A holding member having
The epitaxial growth apparatus characterized in that the holding member holds the lift pin between the ring portion and the elastic member. 前記貫通孔は、前記軸線回りに複数形成され、
複数の前記貫通孔には、前記リフトピンがそれぞれ挿入される請求項１に記載のエピタキシャル成長装置。 A plurality of the through holes are formed around the axis,
The epitaxial growth apparatus according to claim 1, wherein the lift pins are inserted into the plurality of through holes, respectively. 前記貫通孔は、第１貫通孔であり、
前記サセプタに接続して前記第１貫通孔の下を横切るアーム部を有して前記サセプタを支持する支持部を備え、
前記アーム部は、前記第１貫通孔に挿入される前記リフトピンが貫通する第２貫通孔を有し、
前記第２貫通孔は、前記サセプタの半径方向に延びる長穴である請求項１又は２に記載のエピタキシャル成長装置。 The through hole is a first through hole,
A support part for supporting the susceptor by having an arm part connected to the susceptor and crossing under the first through hole;
The arm portion has a second through hole through which the lift pin inserted into the first through hole passes,
The epitaxial growth apparatus according to claim 1, wherein the second through hole is a long hole extending in a radial direction of the susceptor. 前記アーム部は、前記サセプタの下方に位置する一端部と、前記サセプタに接続する他端部を有し、
前記支持部は、前記軸線方向に延びて上端部が前記一端部に接続する支柱部を備え、
前記保持部材は、前記支柱部回りに位置する請求項３に記載のエピタキシャル成長装置。 The arm portion has one end located below the susceptor and the other end connected to the susceptor,
The support portion includes a column portion extending in the axial direction and having an upper end connected to the one end.
The epitaxial growth apparatus according to claim 3, wherein the holding member is positioned around the support column. 前記リフトピンは、前記第１貫通孔に引っ掛かることが可能な上部を有し、
前記リフトピンは、前記上部が前記第１貫通孔に引っ掛かることにより前記サセプタに保持される請求項３又は４に記載のエピタキシャル成長装置。 The lift pin has an upper part that can be caught in the first through hole,
5. The epitaxial growth apparatus according to claim 3, wherein the lift pin is held by the susceptor when the upper portion is caught by the first through hole. 6. 前記上部は、前記第１貫通孔を塞ぐように前記サセプタに引っ掛かることが可能であり、
前記リフトピンは、前記上部が前記第１貫通孔に引っ掛かることにより前記第１貫通孔を塞いだ状態で前記サセプタに保持される請求項５に記載のエピタキシャル成長装置。 The upper part can be hooked on the susceptor so as to close the first through hole;
The epitaxial growth apparatus according to claim 5, wherein the lift pin is held by the susceptor in a state where the upper portion is hooked on the first through hole to close the first through hole. 前記サセプタは、黒鉛製又は炭化珪素製若しくは炭化珪素でコーティングされた黒鉛製であり、
前記保持部材は、炭化珪素製である請求項１ないし６のいずれか１項に記載のエピタキシャル成長装置。 The susceptor is made of graphite or silicon carbide or graphite coated with silicon carbide,
The epitaxial growth apparatus according to claim 1, wherein the holding member is made of silicon carbide. 前記弾性部材は、前記接続部を含む板状部材である請求項１ないし７のいずれか１項に記載のエピタキシャル成長装置。   The epitaxial growth apparatus according to claim 1, wherein the elastic member is a plate-like member including the connection portion. 前記リング部は、円状又は略円状に形成される請求項１ないし８のいずれか１項に記載のエピタキシャル成長装置。   The epitaxial growth apparatus according to claim 1, wherein the ring portion is formed in a circular shape or a substantially circular shape. 前記保持部材は、前記リング部と前記弾性部材の間に前記リフトピンの下端部を挟んで前記リフトピンを保持する請求項１ないし９のいずれか１項に記載のエピタキシャル成長装置。   10. The epitaxial growth apparatus according to claim 1, wherein the holding member holds the lift pin with a lower end portion of the lift pin interposed between the ring portion and the elastic member. 表裏を貫通する貫通孔を有して軸線回りに回転可能なサセプタの前記貫通孔に挿入されるリフトピンを保持する保持部材であって、
前記軸線回りに位置するリング部と、
前記リング部に接続する接続部を含み前記接続部から前記リング部に沿って延びて前記接続部を基点に前記リング部に向けて付勢する弾性部材と、
を備え、
前記リング部と前記弾性部材の間に前記リフトピンを挟んで保持することを特徴とする保持部材。 A holding member for holding a lift pin inserted into the through hole of the susceptor having a through hole penetrating the front and back and rotatable around an axis,
A ring portion located around the axis;
An elastic member including a connection portion connected to the ring portion, extending from the connection portion along the ring portion, and biasing the connection portion as a base point toward the ring portion;
With
A holding member, wherein the lift pin is held between the ring portion and the elastic member.
JP2016011472A 2016-01-25 2016-01-25 Epitaxial growth apparatus and holding member Active JP6403100B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016011472A JP6403100B2 (en) 2016-01-25 2016-01-25 Epitaxial growth apparatus and holding member
PCT/JP2017/001501 WO2017130809A1 (en) 2016-01-25 2017-01-18 Epitaxial growth device and holding member
KR1020187015504A KR102402754B1 (en) 2016-01-25 2017-01-18 Epitaxial growth apparatus and holding member
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US11018047B2 (en) * 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
JP7135841B2 (en) 2018-12-25 2022-09-13 株式会社Sumco WAFER TRANSFER APPARATUS, VAPOGRAPHIC APPARATUS, WAFER TRANSFER METHOD, AND METHOD FOR MANUFACTURING Epitaxial SILICON WAFER
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