KR100790779B1 - Method of depositing dielectric layer with increased gap-fill ability - Google Patents

Abstract

An insulating film deposition method having improved gap fill capability is provided. In the insulating film deposition method according to the present invention, the density of the plasma is changed in depositing the insulating film by activating the source gas using the plasma. In the early stages of deposition, deposition at low plasma densities allows for low deposition rates while increasing gap fill capability to fill voids such as trenches in shallow trench isolation (STI) processes without voids. Once the bone is filled to some extent, the plasma density is continuously increased to ensure deposition rate.

Description

Insulation deposition method with improved gap fill ability {Method of depositing dielectric layer with increased gap-fill ability}

1 is a schematic diagram of a thin film deposition apparatus for performing an insulating film deposition method according to an embodiment of the present invention.

2A to 2C are graphs showing plasma density changes in the insulating film deposition method according to the present invention.

3A to 3C are graphs illustrating supply of a source gas and a reactant gas, which are source gases, in the insulating film deposition method according to the present invention.

4 shows a detailed structure of a showerhead in the apparatus of FIG. 1.

5 is a schematic diagram of a thin film deposition apparatus for performing an insulating film deposition method according to another embodiment of the present invention.

6A through 6D are cross-sectional views sequentially illustrating an STI process to which an insulating film deposition method according to the present invention may be applied.

7A to 7C are cross-sectional views sequentially illustrating a pre-metal layer process before forming a metal line to which the insulating film deposition method according to the present invention can be applied.

8A to 8C are cross-sectional views sequentially illustrating an intermetal dielectric (IMD) process to which an insulating film deposition method according to the present invention may be applied.

<Explanation of symbols for the main parts of the drawings>

1, 1 '... thin film deposition apparatus 10 ... reactor

11, 11 '... shower head 12 ... wafer block

22, 22a, 22b ... gas line 24 ... bypass line

30 ... RF power supply 50 ... 1st plate

55 ... radical injection pipe 60 ... plasma generating hole

65 ... 2nd plate 70 ... through hole

75 Source gas injection hole 120 Silicon oxide film

120a ... STI 275 ... free metal layer

290, 310, 330 ... metal wiring 320 ... IMD film

The present invention relates to an insulating film deposition method, and more particularly to an insulating film deposition method with improved gap fill (gap fill) capability.

As the integration density of semiconductor devices such as DRAM is rapidly increasing, the operation speed of the semiconductor devices is required to increase, and the low power characteristics of the current semiconductor devices are also greatly increased. In order to meet these demands, the size of semiconductor devices must be continuously reduced.

As the size of a semiconductor device decreases, device characteristics must also be improved, but physical process limitations cause many problems. In particular, in the current shallow trench isolation (STI) process, as the aspect ratio of the trench increases as the device size decreases, the gap fill capability of the insulation layer, or in other words, the decrease in the filling ability of the insulating layer, is raised. The void due to lack of margin is increasing. Such voids cause problems by causing gate bridges. Such a gap peel capability is also a problem in the intermetal dielectric (IMD) process, etc., in addition to the STI process, which fills the valleys between the metal wires.

Conventionally, high-density trenches or valleys without voids are filled with HDP (High Density Plasma) CVD and Sub-Atmospheric (SA) CVD. U. S. Patent No. 6,905, 940 introduces a SACVD gap fill method, in which a Si source is continuously supplied to the reactor, but the amount of Si source is gradually changed (increased) to increase the gap fill capability. The initial process sends a relatively small amount of Si source to the reactor. Although the deposition rate is slow due to the small amount of Si source, the silicon oxide film is uniformly deposited on the valleys. Thereafter, the amount of Si source is gradually increased to increase the deposition rate.

In the gap fill method by SACVD, high temperature of 500 ° C. or higher and high pressure of 600 torr or more are used to improve void quality and improve film quality. Because of this, the deposition rate is significantly reduced, there is a disadvantage that the by-products increase in the reactor and the component life in the reactor is shortened.

The technical problem to be achieved by the present invention is to provide an insulating film deposition method with improved gap fill capability.

In the insulating film deposition method according to the present invention for achieving the above technical problem, in the method for supplying a source gas and a reaction gas into the reactor and depositing the insulating film on a wafer seated in the reactor using a plasma, the density of the plasma While depositing the insulating film.

As described above, the present invention allows the density of the plasma to be continuously changed in depositing the insulating film. Plasma enables the deposition of thin films at low temperatures by activating the source gas. Initially, deposition at low plasma density results in lower deposition rates while increasing gap fill capability. At this time, the gas can be injected in a cycle manner to improve the gap fill capability, and a bias can be applied to a portion where the wafer is seated to further improve the capability. This bias power can also be changed continuously.

Several processes may already be performed on the wafer to form valleys or trenches. If such valleys or trenches are to some extent filled with insulating film deposition under a low plasma density, the plasma density is continuously increased to increase the deposition rate.

The density of the plasma can also be changed by varying the power of the applied RF power supply, changing the amount of gas, or changing the pressure inside the reactor. The power of the RF power source can be changed stepwise or linearly. Plasma is preferably formed inside the showerhead to facilitate radical formation and eliminate damage to the reactor and wafer by the plasma. When plasma is directly formed in a reactor, the yield is increased by causing damage to the wafer and circuit elements formed on the wafer by arc generation, ion bombarding, and ion implantation in the early stage of plasma generation. This is because there is a risk of lowering. However, if there is no such concern or if it can be reduced, of course, plasma may be generated inside the reactor.

The insulating film may be a silicon oxide film, a source gas may include Si, a reactive gas may be an oxidizing gas, the gas containing Si may be tetra ethyl ortho silicate (TEOS), and the oxidizing gas may be oxygen or N ₂ O. Instead, the gas containing Si is any one selected from the group consisting of silane, trimethylsilane, tetramethylsilane, dimethylsilane, tetramethylcyclotetrasiloxane and combinations thereof, wherein the oxidizing gas is ozone, oxygen, steam, nitrogen dioxide. And combinations thereof. In order to stabilize the flow of the source gas, the source gas may be bypassed for a predetermined time before entering the reactor.

In a preferred embodiment of the present invention, the plasma is generated inside the showerhead, and the source gas and the reactant gas are separated from the showerhead so as to meet in rain within the reactor. The reaction gas is injected into the reactor in the form of radicals by forming a plasma with the power of the RF power applied inside the shower head, and the source gas is separated from the reaction gas and injected into the reactor without generating plasma. The power of the RF power applied to the showerhead is changed over time so that the reaction rate can be adjusted.

The spacing between the showerhead and the wafer can be changed during the process to change the deposition rate and gap fill capability. If the spacing between the showerhead and the wafer is farther apart, the deposition rate is reduced but the gap fill capability is increased. Therefore, in order to advance the gap fill at the initial stage of deposition, the gap between the showerhead and the portion on which the wafer is placed is increased, and when the gap fill is made to some extent, the gap is narrowed to secure the deposition rate.

The insulating film deposition process according to the present invention can be applied to the deposition of the insulating film used in the shallow trench isolation (STI) process, the pre-metal layer before forming the metal wiring, or the intermetal dielectric (IMD film). have.

As described above, the insulating film manufactured by the method according to the plasma density change has various advantages. Plasma is generated in the showerhead and input into the reactor in the form of radicals to prevent damage to the wafer or the reactor by the plasma. Growth can be inhibited. It has a high deposition rate with a high gap fill capability and can deposit a stable insulating film.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. The embodiments described below may be modified in many different forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. In the drawings illustrating embodiments of the present invention, like numerals in the drawings refer to like elements.

First embodiment

1 is a schematic diagram of a thin film deposition apparatus for performing a deposition method according to an embodiment of the present invention.

Referring to FIG. 1, the thin film deposition apparatus 1 may include a reactor 10 having an internal space, a wafer block 12 installed to be elevated in an internal space of the reactor 10, and a wafer W disposed thereon. And a shower head 11 for injecting a source gas, which is a source gas, and a reactive gas into the reactor 10 such that a thin film is formed on the wafer W disposed on the wafer block 12.

The thin film deposition apparatus 1 is for depositing an insulating film on a wafer W such as a silicon wafer for semiconductor or a glass substrate for LCD, and reacts with a source gas to the reactor 10 through gas lines 22a and 22b. The gas supply apparatus 20 which supplies a gas is also included. In this embodiment, an example in which two gas lines are separated and configured to separate the source gas and the reactive gas is given. An RF power source 30 is connected to the showerhead 11 to form a plasma inside the showerhead 11. Reference numeral 24 denotes a bypass line, which is configured to be connected to a pump P for emptying the inside of the reactor 10.

The method of depositing an insulating film according to the present invention using the thin film deposition apparatus 1 is as follows.

First, the wafer W is loaded onto the wafer block 12 of the thin film deposition apparatus 1, and then an insulating film is deposited on the wafer W by supplying a source gas and a reactive gas. At this time, a silicon oxide film can be deposited as an insulating film using a gas containing Si as the source gas and an oxidizing gas as the reaction gas. The source gas and the reactant gas may be supplied together with a carrier gas such as Ar. The carrier gas may be made of N ₂ or He, or a combination thereof in addition to Ar. In order to stabilize the flow of the source gas, the source gas may be bypassed through the bypass line 24 for a predetermined time before entering the reactor 10.

The gas containing Si as a source gas may use tetra ethyl ortho silicate (TEOS), and the oxidizing gas may use oxygen (O ₂ ) or N ₂ O as a reaction gas. Instead, a gas containing Si may use silane, trimethylsilane, tetramethylsilane, dimethylsilane, tetramethylcyclotetrasiloxane, or a combination thereof. In this case, as the oxidizing gas, ozone (O ₃ ), oxygen, steam ( steam, H ₂ O), nitrogen dioxide (NO ₂ ) or combinations thereof may be used. If necessary, other kinds of source plasticization may be further used.

In the insulating film deposition method according to the present invention, the insulating film is deposited while changing the density of the plasma generated inside the shower head 11. Preferably, the plasma is initially deposited by lowering the density of the plasma to increase the gap fill capability of the insulating layer, and when the valley between the structure and the artificially formed trenches is partially filled, the density of the plasma is increased to secure the deposition rate. do.

The density of the plasma may change the power of the RF power source 30 connected to the showerhead 11, change the amount of source gas and reaction gas, change the pressure inside the reactor 10, or a combination thereof. It can be changed by changing.

For example, the power of the RF power supply 30 can be increased stepwise to change the density of the plasma stepwise as shown in FIG. 2A. In addition, the power of the RF power supply 30 may be linearly increased to change the density of the plasma linearly as shown in FIG. 2B. However, the manner of increasing the RF power supply 30 is not necessarily limited to such a stepped and linear form, and may be increased in any form to obtain a plasma density as shown in FIG. 2C.

The source gas and the reactant gas for insulating film deposition may be continuously supplied to the reactor 10 as shown in FIG. 3A. "On" here means the valve open state of the gas lines 22a, 22b.

However, in order to further improve the initial gap fill capability, the source gas and the reactant gas can be supplied in a cycle manner as shown in FIG. 3B during the deposition at a lower density of the plasma. Here, "off" refers to the valve closed state of the gas lines 22a and 22b. For example, the source gas is first stopped for a predetermined time supply (source gas on) and the supply of source gas (source gas off). Next, the reaction gas is supplied for a predetermined time (reaction gas on), and then the supply of the reaction gas is stopped (reaction gas off). Repeat this cycle one or more times. In addition, as shown in FIG. 3C, the source gas may be continuously supplied, and only the reactive gas may be supplied in a pulse form (repetition of on and off).

To further improve the initial gap fill capability, a bias may be applied to the portion where the wafer W is seated, that is, the wafer block 12 during the deposition by lowering the density of the plasma, thereby continuously changing the power of the bias. Can be.

In addition, the insulating film may be deposited by changing the gap between the showerhead 11 and the wafer block 12. Initially, by increasing the gap fill capability of the insulating film by increasing the gap, the gap is narrowed after a predetermined time. Secure the deposition rate.

As mentioned above, in this embodiment, the plasma is formed inside the shower head 11 which injects the source gas and the reactant gas into the reactor 10. More preferably, the source gas and the reactant gas are separated in the showerhead 11 and are met inside the reactor 10. More preferably, the reaction gas is sprayed into the reactor 10 in the form of a plasma inside the shower head 11, and the source gas is separated from the reaction gas and injected into the reactor 10 without plasma generation.

4 shows a detailed structure of the showerhead 11 for this purpose.

As shown in FIG. 4, the RF power supply 30 is installed outside the showerhead 11, and the RF power supply 30 is connected to the first plate 50 in the showerhead 11. Plasma is generated in the shower head 11 by the first plate 50. The first plate 50 is formed with a plurality of radical injection pipes 55 for evenly injecting radicals of the reaction gas supplied through the gas line 22b of FIG. 1. The first plate 50 is also provided with a plurality of plasma generating holes 60 corresponding to the plurality of radical injection pipes 55. The plasma generated in the plasma generating hole 60 is supplied into the reactor (10 of FIG. 1) along the radical injection tube 55 having a predetermined length.

The second plate 65 is provided at a lower portion of the first plate 50 at predetermined intervals. The second plate 65 is not only formed with a plurality of through holes 70 through which the plurality of radical injection tubes 55 formed in the first plate 50 pass, but also through the gas line 22a of FIG. 1. A plurality of source gas injection holes 75 for evenly injecting the supplied source gas are also formed.

When the shower head 11 is configured as described above, the reaction gas supplied through the gas line 22b is plasma-formed in the shower head 11 and injected into the reactor 10 through the radical injection pipe 55 in the form of radicals. The source gas supplied through the gas line 22a may be separated from the reaction gas and injected into the reactor 10 through the source gas injection hole 75 without generating plasma. The configuration of such a showerhead 11 is disclosed in Korean Laid-Open Patent No. 2005-0087405, which is incorporated herein by reference.

When the plasma is formed inside the shower head 11, radical formation is easy, and damage to the reactor 10 and the wafer W may be eliminated by the plasma. In addition, by separating the source gas and the reaction gas in the shower head 11 and finally meet in the reactor 10, it is possible to prevent the problem that the gases are mixed in the shower head 11 to generate particles.

As described above, by lowering the density of the plasma at the beginning of the deposition of the insulating film, and after a certain time by increasing the density of the plasma to deposit the insulating film, the gap fill capability can be improved initially and later deposition Speed can be secured. Therefore, according to the present invention, it is possible to deposit a stable insulating film with a high gap fill capability and a high deposition rate.

Second embodiment

5 is a schematic diagram of a thin film deposition apparatus for performing a deposition method according to another embodiment of the present invention. In FIG. 5, the same components as in FIG. 1 are denoted by the same reference numerals, and description thereof is omitted.

This embodiment is the same as the first embodiment except that the plasma is formed inside the reactor 10 and not inside the showerhead 11 '.

Referring to FIG. 5, the thin film deposition apparatus 1 ′ includes a reactor 10 having an internal space and a wafer block 12 installed to be elevated in an internal space of the reactor 10 and having a wafer W disposed thereon. And a shower head 11 ′ that injects a source gas and a reactant gas into the reactor 10 to form a thin film on the wafer W disposed on the wafer block 12. The thin film deposition apparatus 1 ′ also includes a gas supply device 20 that supplies a source gas and a reactive gas to the reactor 10 through the gas line 22. An RF power supply 30 is connected to the showerhead 11 ′ to form a plasma between the shower head 11 ′ and the wafer block 12. Reference numeral 24 denotes a bypass line, which is connected to a pump P that empties the inside of the reactor 10.

The method of depositing an insulating film using the thin film deposition apparatus 1 'is also the same as that of the first embodiment except that the plasma is formed and deposited inside the reactor 10 and not inside the shower head 11'. Do.

When the plasma is formed inside the reactor 10, damage to the reactor 10 and the wafer W may be a concern, but if there is no such concern or if the plasma can be reduced, as in the present embodiment, the plasma may be reduced. May be generated inside the reactor 10.

In addition, the remaining matters not mentioned in this embodiment can be used as they are in the first embodiment.

Third embodiment

6A to 6D show an STI process to which an insulating film deposition method according to the present invention can be applied.

First, referring to FIG. 6A, a pad insulating layer 110 is formed by sequentially forming a thermal oxide film 104 and a nitride film 108 on a silicon wafer 100. Subsequently, the photoresist 112 is coated on the pad insulating layer 110. In order to prevent reflection, an organic antireflection coating (ARC) (not shown) may be further applied before the photoresist 112 is applied on the pad insulating layer 110.

The thermal oxide film 104 is formed to prevent defects from occurring due to stresses resulting from the difference in thermal expansion coefficient between the wafer 100 and the nitride film 108, and is formed to a thickness of about 100 to 300 kPa. The nitride film 108 is used as an etch mask when etching the field region of the wafer 100. The nitride film 108 may also be used as a planarization stop film during a subsequent chemical mechanical polishing (CMP) step. It is preferable to form it in thickness thick enough so that it is not added to. For example, silicon nitride is formed by depositing a thickness of about 1800-2200 Å (but lower may be formed if organic ARC is formed). The deposition method may be conventional methods such as CVD, SACVD, Low Pressure CVD (LPCVD) or Plasma Enhanced CVD (PECVD), and SiH ₂ Cl ₂ and NH ₃ may be used as the deposition source.

Next, referring to FIG. 6B, the photoresist pattern 112a is formed by performing exposure and development processes to define a field region. Subsequently, the pad insulating layer 110 is patterned by a dry etching method using the photoresist pattern 112a as an etching mask until the upper surface of the wafer in the field region is exposed. That is, the nitride film 108 and the thermal oxide film 104 in the active region are left, and the nitride film 108 and the thermal oxide film 104 in the field region are removed by etching. As a result, the patterned pad insulating layer 110a includes a nitride film pattern 108a and a thermal oxide pattern 104a that remain on the active region. When etching the nitride film 108, a gas such as CF ₄ , CHF ₃ , C ₂ F ₆ , C ₄ F ₈ , CH ₂ F ₂ , CH ₃ F, CH ₄ , C ₂ H ₂ , C ₄ F ₆ , or the like. These mixed gases can be used.

FIG. 6C illustrates a state in which the trench 116 defining the active region is formed by removing the photoresist pattern 112a and then dry etching the exposed wafer 100. Photoresist pattern 112a may be ashed using conventional methods such as oxygen plasma and then removed with an organic strip.

The trench 116 here has a high aspect ratio as the device shrinks. The silicon oxide film 120 is deposited in the trench 116 using the insulating film deposition method according to the present invention. In order to stabilize the trench 116, the thin thermal oxide layer (not shown) may be first grown, and then the silicon oxide layer 120 may be deposited. In the initial stage of deposition, the plasma density is reduced to preferentially improve the gap fill capability, thereby depositing the silicon oxide film 120 (see a wide gap dotted line). Then, a silicon oxide film 120 is deposited so as to be deposited to a predetermined thickness on the patterned pad insulating film 110a to increase the plasma density to completely fill the trench 116 (see a narrow gap dotted line). The oxide film 120 is planarized to substantially the same level as the upper surface of the nitride film pattern 108a of the patterned pad insulating film 110a (see the dashed-dotted line display). For example, the silicon oxide film 120 is planarized by CMP or etch back. In this planarization process, the nitride film pattern 108a is used as the planarization stop film. For example, when the silicon oxide film 120 is planarized using CMP, the nitride film pattern 108a functions as a CMP stopper. Therefore, the slurry used in the CMP can etch the silicon oxide film 120 faster than the nitride film pattern 108a. For example, a slurry containing a ceria (CeO ₂ ) -based abrasive may be selected. Bring it.

6D, the patterned pad insulating layer 110a is removed to form a trench isolation layer, that is, an STI 120a that is substantially parallel to the surface of the wafer 100. The nitride layer pattern 108a of the patterned pad insulating layer 110a may be removed by applying a phosphate strip, and the thermal oxide layer pattern 104a may be removed using HF or BOE (Buffered Oxide Etchant).

Fourth embodiment

7A to 7C illustrate a pre-metal layer (hereinafter, referred to as a pre-metal layer) process before forming a metal wire to which the insulating film deposition method according to the present invention can be applied.

FIG. 7A illustrates a state in which one cylinder storage (OCS) capacitor 270 is formed on the wafer 210. Referring to FIG. 7A, a contact pad 230 self-aligned by two adjacent gates 220 is formed in a cell region C of a DRAM. The contact plug 245 is formed on the upper surface of the contact pad 230. Reference numerals "225" and "235" are both insulating films. The cylindrical lower electrode 255a is formed in contact with the upper surface of the contact plug 245. The dielectric layer 260 and the upper electrode 265 are sequentially formed on the lower electrode 255a, and the peripheral circuit region P is removed by patterning to form a capacitor 270.

An interlayer insulating film must be formed on the capacitor 270 to insulate the metal line to be formed subsequently and the capacitor 270. This interlayer insulating film is a free metal layer.

The insulating film deposition method according to the present invention can also be used to deposit such a free metal layer. Referring to FIG. 7B, a free metal layer 275 is formed on the structure as shown in FIG. 7A. The free metal layer 275 may be formed of a silicon oxide film. Initially, the free metal layer 275 is deposited by lowering the plasma density to preferentially improve the gap fill capability. Thereafter, the plasma density is increased to deposit the free metal layer 275. The upper surface of the free metal layer 275 formed in the peripheral circuit region P needs to be thicker than the upper surface of the capacitor 270 formed in the cell region C. As the plasma density increases, the deposition rate is secured so that the deposition can be made thick without the need for a long time.

Next, as shown in FIG. 7C, the free metal layer 275 is flattened with CMP, a metal is applied on the flattened free metal layer 275, and a metal line 290 is formed by a photolithography process.

Fifth Embodiment

8A to 8C show an IMD process to which an insulating film deposition method according to the present invention can be applied.

The semiconductor device usually contains 6-7 layers or more of metal wiring, the lower metal wiring and the upper metal wiring are insulated with an IMD film, and vias are formed in necessary portions to connect the lower and upper metal wiring. . The insulation film deposition method according to the present invention can also be used for deposition of such an IMD film.

8A illustrates that the lower metal wiring 310 is formed on the lower structure 300. As the device is integrated, the distance between the metal wires 310 is closer at the same level, and a method for filling voids formed therebetween is required.

Accordingly, in the initial stage of deposition, the IMD film 320 is deposited as shown in FIG. 8B by first lowering the plasma density to improve the gap fill capability. Then, the plasma density is increased to increase the deposition rate to further deposit the IMD film 320. The IMD film 320 here may be a silicon oxide film using TEOS as a source gas, or may be a SiOF film formed using silane, SiF ₄ gas and O ₂ gas. The IMD film 320 needs to be formed of a low dielectric constant film to eliminate the RC delay. Accordingly, by selecting the appropriate source gas and the reactive gas, any kind of low dielectric film can be deposited using the insulating film deposition method according to the present invention.

Then, as shown in FIG. 8C, the IMD film 320 is planarized, and if necessary, a wiring trench and a via trench are formed by a dual damascene method or a single damascene method. After the via trench is formed, the metal wiring 330 of the upper layer is filled with metal. In the drawing, the lower metal wiring 310 and the upper metal wiring 330 are connected by vias 340.

Although the detailed description of the present invention has been made, it will be apparent to those skilled in the art that various modifications may be made without departing from the scope of the present invention. The invention is only defined by the scope of the claims.

According to the present invention, in the initial stage of deposition, the density of the plasma is lowered to deposit the insulating film, and after a certain time, the density of the plasma is increased to deposit the insulating film. Accordingly, the gap fill capability can be improved initially, and the deposition rate can be secured later. Therefore, according to the present invention, it is possible to deposit a stable insulating film with high gap fill capability and high deposition rate. In addition, the present invention can be used to deposit various insulating films in a semiconductor process, for example, an STI process, a free metal layer or an IMD film.

Claims (19)

A method of supplying a source gas and a reaction gas into a reactor and depositing an insulating film on a wafer seated in the reactor using plasma, While depositing the insulating film while changing the density of the plasma, The plasma is formed inside a shower head which injects the source gas and the reaction gas into the reactor, and separates the source gas and the reaction gas from the shower head and meets inside the reactor, so that the reaction gas is in the shower. Plasma is formed inside the head and sprayed into the reactor in the form of radicals, wherein the source gas is separated from the reaction gas and injected into the reactor without plasma generation. The method of claim 1, wherein the source gas is a gas comprising Si and the reaction gas is an oxidizing gas, and the source gas and the reaction gas are continuously supplied to the reactor. The method of claim 1, wherein the source gas is a gas containing Si and the reaction gas is an oxidizing gas, the gas containing Si is tetra ethyl ortho silicate (TEOS) and the oxidizing gas is oxygen or N ₂ O How to feature. The method of claim 1, wherein the source gas is a gas containing Si and the reaction gas is an oxidizing gas, the gas containing Si is silane, trimethylsilane, tetramethylsilane, dimethylsilane, tetramethylcyclotetrasiloxane and Any one selected from the group consisting of combinations, and the oxidizing gas is any one selected from the group consisting of ozone, oxygen, steam, nitrogen dioxide and combinations thereof. The method of claim 1, wherein the source gas is bypassed for a predetermined time before entering the reactor to stabilize the flow of the source gas. The method of claim 1, wherein the plasma density is reduced by increasing the gap fill capability of the insulating layer, thereby increasing the density of the plasma. A method of supplying a source gas and a reaction gas into a reactor and depositing an insulating film on a wafer seated in the reactor using plasma, Depositing the insulating film by lowering the density of the plasma to increase the gap fill capability of the insulating film and increasing the plasma density; Supplying the source gas and the reactant gas in a cycle manner during the deposition by lowering the density of the plasma. A method of supplying a source gas and a reaction gas into a reactor and depositing an insulating film on a wafer seated in the reactor using plasma, Depositing the insulating film by lowering the density of the plasma to increase the gap fill capability of the insulating film and increasing the plasma density; Supplying the reaction gas in a pulsed form while continuously supplying the source gas while depositing at a lower density of the plasma. A method of supplying a source gas and a reaction gas into a reactor and depositing an insulating film on a wafer seated in the reactor using plasma, Depositing the insulating film by lowering the density of the plasma to increase the gap fill capability of the insulating film and increasing the plasma density; And applying a bias to a portion where the wafer is seated. 10. The method of claim 9, wherein the power of the bias is varied continuously. The method of claim 1, wherein the density of the plasma is any one selected from the group consisting of a power of an RF power source to be applied, an amount of the source gas and a reactant gas, a pressure inside the reactor, and a combination thereof. Varying by changing. 12. The method of claim 11, wherein the power of the RF power source is varied stepwise or linearly. 10. The method of any one of claims 7 to 9, wherein the plasma is formed inside the reactor. 10. The method of any one of claims 7 to 9, wherein the plasma is formed inside a showerhead that injects the source gas and reactant gas into the reactor. 15. The method of claim 14, wherein the source gas and the reactant gas are separated in the showerhead and meet inside the reactor. The method of claim 15, wherein the reaction gas is plasma is formed in the shower head is injected into the reactor in the form of radicals, the source gas is separated from the reaction gas and characterized in that the injection into the reactor without plasma generation Way. A method of supplying a source gas and a reaction gas into a reactor and depositing an insulating film on a wafer seated in the reactor using plasma, While depositing the insulating film while changing the density of the plasma, And depositing the insulating film while varying a distance between a showerhead for injecting the source gas and the reactive gas into the reactor and a portion on which the wafer is seated. 18. The method of claim 17, wherein the spacing is increased to increase the gap fill capability of the insulating film and to deposit the narrowed gap. 18. The insulating film according to any one of claims 1 to 10 and 17, wherein the insulating film is an insulating film used in a shallow trench isolation (STI) process, an insulating film before forming a metal wiring, and an intermetallic. The method of any one of an insulating film (Inter Metal Dielectric: IMD).

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