CN113862639B - Continuous preparation system and preparation method for CVD low-temperature oxide film - Google Patents
Continuous preparation system and preparation method for CVD low-temperature oxide film Download PDFInfo
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- CN113862639B CN113862639B CN202111080360.3A CN202111080360A CN113862639B CN 113862639 B CN113862639 B CN 113862639B CN 202111080360 A CN202111080360 A CN 202111080360A CN 113862639 B CN113862639 B CN 113862639B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 230000000670 limiting effect Effects 0.000 claims abstract description 32
- 238000010891 electric arc Methods 0.000 claims abstract description 13
- 230000007246 mechanism Effects 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 230000005540 biological transmission Effects 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 230000000149 penetrating effect Effects 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- 230000009471 action Effects 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 3
- 230000006978 adaptation Effects 0.000 claims 1
- 238000010924 continuous production Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 38
- 208000037998 chronic venous disease Diseases 0.000 description 30
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using dc or ac discharges
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- General Chemical & Material Sciences (AREA)
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Abstract
The invention discloses a continuous preparation system and a preparation method of a CVD low-temperature oxide film, wherein an auxiliary mechanism comprises a supporting platform, a fixed column, a transverse plate, a first motor and a second motor, and the supporting platform is fixedly connected to the bottom of the inner wall of a shell. According to the CVD low-temperature oxide film continuous preparation system and the preparation method, the distance between the substrate and the electric arc device is reduced continuously through the cooperation of the supporting platform, the fixing column, the transverse plate, the first motor, the second motor, the first groove, the second groove, the base station, the first screw rod, the connecting component, the through groove, the substrate, the connecting arm, the third groove, the limiting component and the second screw rod, so that the reaction is sufficient, the working efficiency and the low-temperature oxide film quality are improved, the problem that the existing CVD low-temperature oxide film preparation system affects the low-temperature oxide film quality, meanwhile, continuous preparation of the CVD low-temperature oxide film cannot be realized, and the preparation efficiency is low is solved.
Description
Technical Field
The invention relates to the technical field of film material preparation, in particular to a CVD low-temperature oxidation film continuous preparation system and a preparation method.
Background
CVD refers to a gas phase reaction at high temperature. For example, a method of thermally decomposing a metal halide, an organic metal, a hydrocarbon, or the like, reducing hydrogen, or chemically reacting a mixed gas thereof at a high temperature to precipitate an inorganic material such as a metal, an oxide, or a carbide. This technique was originally developed as a means of coating, but is applied not only to coating of heat-resistant substances but also to refining of high purity metals, powder synthesis, semiconductor thin films, etc., and is a very characteristic technical field. CVD is a process in which vapors of a gaseous reactant or a liquid reactant containing elements constituting a thin film and other gases required for the reaction are introduced into a reaction chamber, and chemical reaction occurs on the surface of a substrate to form a thin film. Many thin films are fabricated by CVD in very large scale integrated circuits. After the CVD treatment, the adhesion of the surface-treated film was improved by about 30%, and scratches generated during forming such as bending and stretching of the high-strength steel were prevented.
The conventional CVD low-temperature oxide film preparation system is generally inconvenient to adjust the distance between a deposition base and a direct current arc plasma spraying area, so that the quality of a low-temperature oxide film deposited on the deposition base is influenced, meanwhile, the conventional CVD low-temperature oxide film preparation system cannot realize continuous preparation of the CVD low-temperature oxide film, and the preparation efficiency is low, so that the invention provides the CVD low-temperature oxide film continuous preparation system and the preparation method, and the problems are solved.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a continuous preparation system and a preparation method of a CVD low-temperature oxide film, which solve the problems that the quality of the low-temperature oxide film is influenced by the existing preparation system of the CVD low-temperature oxide film, and meanwhile, the continuous preparation of the CVD low-temperature oxide film cannot be realized, and the preparation efficiency is lower.
In order to achieve the above purpose, the invention is realized by the following technical scheme: the utility model provides a continuous preparation system of CVD low temperature oxide film, includes the brace table, the standing groove has been seted up at the top of brace table, the inside fixedly connected with casing of standing groove, the inside of casing is provided with electric arc device, one side of casing is provided with intake pipe passageway and outlet duct passageway respectively, the front of casing is provided with first case lid, the through-hole has been seted up in one side of casing running through, first fixed slot has been seted up on the brace table, communicate between first fixed slot and the standing groove, be provided with auxiliary mechanism on the casing.
The auxiliary mechanism comprises a supporting platform, a fixed column, a transverse plate, a first motor and a second motor, wherein the supporting platform is fixedly connected to the bottom of the inner wall of the shell, a first groove and a second groove are respectively formed in the top of the supporting platform, a base station is connected to one side of the transverse plate in a sliding mode, a first screw rod is connected to the inner thread of the base station, a connecting assembly is arranged between the first motor and the first screw rod, the bottom end of the first screw rod is rotationally connected with the bottom of the inner wall of the shell, the first motor is fixedly connected to the bottom of the inner wall of the shell, a through groove is formed in the top of the fixed column in a penetrating mode, a substrate is arranged in the through groove, a connecting arm is fixedly connected to one side of the connecting arm, a third groove is formed in the penetrating mode in one side of the transverse plate, a limiting assembly is arranged between the transverse plate and the supporting platform, a second screw rod is connected to the inner thread of the transverse plate, the output end of the second motor is fixedly connected to one end of the second screw rod, the second motor is fixedly connected to the bottom of the inner wall of the shell, a through groove is fixedly connected to the first motor, and the through groove is matched with the outer surface of the first screw rod.
Preferably, the connecting assembly comprises a transmission rod and a first bevel gear, the transmission rod is fixedly connected to the output end of the first motor, the first bevel gear is fixedly connected to the bottom end of the first screw rod, one end of the transmission rod is fixedly connected with a second bevel gear, and the second bevel gear is meshed with the first bevel gear.
Preferably, the limiting component comprises a sliding groove and a limiting block, the sliding groove is formed in the top of the supporting platform, the limiting block is fixedly connected to the bottom of the transverse plate, and the outer surface of the limiting block is matched with the inner portion of the sliding groove.
Preferably, the top opening of the third groove cavity is arranged, the distance between the front and the rear of the third groove cavity is matched with the outer surface of the fixed column, and the front surface of the second groove cavity is provided with an opening.
Preferably, a second fixing groove is formed in the bottom of the supporting platform, the second fixing groove is communicated with the first groove, and the front face of the groove cavity of the second fixing groove is provided with an opening.
Preferably, the top of the fixed column is hinged with a second box cover, the distance between the bottom of the fixed column and the top of the supporting platform is the same as the height of the substrate, and the top of the second box cover is fixedly connected with a handle.
Preferably, a first glass window is arranged on the first box cover, second glass windows are arranged on the back surface and two sides of the shell, and the base is positioned under the arc device.
Preferably, the width of diaphragm is greater than the width of fixed post, the bottom fixedly connected with backup pad of shells inner wall, the inside of backup pad is connected with the inside rotation of transfer line.
The invention also discloses a preparation method of the CVD low-temperature oxide film continuous preparation system, which comprises the following steps:
s1, placing a lining plate: firstly, opening a first box cover, sequentially placing part of substrates into a through groove from the bottom of a fixed column, then opening a second box cover through a handle, then placing part of substrates into the through groove from the upper part of the fixed column, enabling the substrate positioned at the lowest part to fall on a supporting platform, and then respectively covering the second box cover and the first box cover;
s2, conveying a substrate: then, a second motor is started to drive a second screw rod to rotate, and under the limiting action of a chute and a limiting block, a transverse plate is driven to move, so that the bottommost substrate is driven to move until the substrate is pushed onto a base station, the transverse plate is positioned below a fixed column, the substrate passing through the chute cannot fall down, and then the transverse plate is driven to reset by the second motor, and at the moment, one substrate falls on a supporting platform;
s3, plating: then, the first motor is started to drive the transmission rod to rotate, so that the first screw rod is driven to rotate under the meshing action between the second bevel gear and the first bevel gear, and the base station is driven to ascend under the limiting action of the first groove, so that the distance between the substrate and the electric arc device is shortened, the reaction is sufficient, the working efficiency and the low-temperature oxide film quality are improved, the problem that the low-temperature oxide film quality is influenced by the existing CVD low-temperature oxide film preparation system is solved, and after the processing is finished, the base station is driven to reset by the first motor;
s4, collecting a substrate: then, the second motor is started again to drive the transverse plate to move, the substrate on the supporting platform is conveyed to the base station, the substrate is utilized to push the previous substrate, the previous substrate is pushed into the second groove to be collected, then the first motor is started again to drive the base station to ascend, the substrate is lifted, and therefore the distance between the substrate and the electric arc device is shortened, continuous preparation of the CVD low-temperature oxide film is achieved, and the preparation efficiency is low.
Preferably, the second motor in S2 and the first motor in S3 are both three-phase asynchronous motors, and the second motor and the first motor are both electrically connected with an external power supply.
Advantageous effects
The invention provides a continuous preparation system and a preparation method of a CVD low-temperature oxide film. Compared with the prior art, the method has the following beneficial effects:
(1) The CVD low-temperature oxide film continuous preparation system and the preparation method thereof comprise an auxiliary mechanism, wherein the auxiliary mechanism comprises a supporting platform, a fixed column, a transverse plate, a first motor and a second motor, the supporting platform is fixedly connected to the bottom of the inner wall of a shell, a first groove and a second groove are respectively formed in the top of the supporting platform, a base station is connected to the inside of the first groove in a sliding manner, a first screw rod is connected to the inside of the base station in a threaded manner, a connecting component is arranged between the first motor and the first screw rod, the bottom end of the first screw rod is rotationally connected with the bottom of the inner wall of the shell, the first motor is fixedly connected to the bottom of the inner wall of the shell, a through groove is formed in the top of the fixed column in a penetrating manner, a substrate is arranged in the through groove, a connecting arm is fixedly connected to one side of the fixed column, a third groove is formed in the penetrating manner on one side of the transverse plate, a limiting component is arranged between the transverse plate and the supporting platform, a second screw rod is connected with the inner thread of the transverse plate, the output end of the second motor is fixedly connected with one end of the second screw rod, the second motor is fixedly connected in the first fixing groove, the outer surface of the second screw rod is matched with the inner part of the through hole, the continuous preparation of the CVD low-temperature oxidation film can not be realized through the supporting platform, the fixing column, the transverse plate, the first motor, the second motor, the first groove, the second groove, the base, the first screw rod, the connecting component, the through groove, the substrate, the connecting arm, the third groove, the limiting component and the second screw rod under the matched use, the independent reduction of the distance between the substrate and the electric arc device is continuously realized, the reaction is sufficient, the working efficiency and the low-temperature oxidation film quality are improved, the problem that the existing CVD low-temperature oxidation film preparation system influences the low-temperature oxidation film quality is solved, meanwhile, the preparation efficiency is low.
(2) According to the continuous preparation system and the preparation method of the CVD low-temperature oxide film, the limiting assembly comprises the sliding groove and the limiting block, the sliding groove is formed in the top of the supporting platform, the limiting block is fixedly connected to the bottom of the transverse plate, the outer surface of the limiting block is matched with the inner surface of the sliding groove, the transverse plate is limited through the matching of the sliding groove and the limiting block, and overturning of the transverse plate during movement of the transverse plate is prevented.
(3) According to the continuous preparation system and the preparation method of the CVD low-temperature oxide film, the second box cover is hinged to the top of the fixed column, the distance between the bottom of the fixed column and the top of the supporting platform is the same as the height of the substrate, the handle is fixedly connected to the top of the second box cover, and the substrate is conveniently placed into the through groove through the cooperation of the second box cover and the handle.
(4) According to the continuous preparation system and the preparation method of the CVD low-temperature oxide film, the supporting plate is fixedly connected to the bottom of the inner wall of the shell, the inside of the supporting plate is rotationally connected with the inside of the transmission rod, and the transmission rod is supported by the aid of the supporting plate.
Drawings
FIG. 1 is a perspective view of the present invention;
FIG. 2 is a front view of the internal structure of the present invention;
FIG. 3 is an enlarged view of a portion of the invention at A in FIG. 2;
FIG. 4 is an enlarged view of a portion of the invention at B in FIG. 2;
FIG. 5 is a perspective view of a support platform of the present invention;
FIG. 6 is a partial cross-sectional view of the support platform of the present invention;
FIG. 7 is a perspective view of a fixing post of the present invention;
FIG. 8 is a partial cross-sectional view of a fixing post of the present invention;
FIG. 9 is a perspective view of a cross plate of the present invention;
fig. 10 is a process flow diagram of the present invention.
In the figure: 1-supporting table, 2-placing groove, 3-housing, 4-arc device, 5-intake pipe channel, 6-outlet pipe channel, 7-first case lid, 8-through hole, 9-auxiliary mechanism, 901-supporting platform, 902-fixed column, 903-diaphragm, 904-first motor, 905-second motor, 906-first groove, 907-second groove, 908-base, 909-first screw rod, 910-connecting component, 9101-transmission rod, 9102-first bevel gear, 9103-second bevel gear, 911-through groove, 912-substrate, 913-connecting arm, 914-third groove, 915-limiting component, 9151-sliding groove, 9152-limiting block, 916-second screw rod, 10-first fixed groove, 11-limiting block, 12-second case lid, 13-handle, 14-first glass window, 15-second glass window, 16-supporting plate.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1-10, the present invention provides a technical solution: the CVD low-temperature oxide film continuous preparation system comprises a supporting table 1, wherein a placing groove 2 is formed in the top of the supporting table 1, a shell 3 is fixedly connected inside the placing groove 2, an electric arc device 4 is arranged inside the shell 3, an air inlet pipe channel 5 and an air outlet pipe channel 6 are respectively arranged on one side of the shell 3, a first box cover 7 is arranged on the front surface of the shell 3, a through hole 8 is formed in one side of the shell 3 in a penetrating manner, a first fixing groove 10 is formed in the supporting table 1, the first fixing groove 10 is communicated with the placing groove 2, and an auxiliary mechanism 9 is arranged on the shell 3; the auxiliary mechanism 9 comprises a supporting platform 901, a fixed column 902, a cross plate 903, a first motor 904 and a second motor 905, wherein the supporting platform 901 is fixedly connected to the bottom of the inner wall of the shell 3, the outer surface of the supporting platform 901 is attached to the inner wall of the shell 3, a first groove 906 and a second groove 907 are respectively formed in the top of the supporting platform 901, a base 908 is slidably connected to the inside of the first groove 906, a first screw rod 909 is connected to the inside of the base 908 in a threaded manner, a connecting component 910 is arranged between the first motor 904 and the first screw rod 909, the bottom end of the first screw rod 909 is rotatably connected to the bottom of the inner wall of the shell 3, the first motor 904 is fixedly connected to the bottom of the inner wall of the shell 3, a through groove 911 is formed in the top of the fixed column 902 in a penetrating manner, a substrate 912 is arranged in the through groove 911, a connecting arm 913 is fixedly connected to one side of the fixed column 902, one side of the connecting arm 913 is fixedly connected to one side of the inner wall of the shell 3, a third groove 914 is formed on one side of the cross plate 903 in a penetrating manner, a limit component 915 is arranged between the cross plate 903 and the supporting platform, a second screw rod 916 is connected to the inner thread of the cross plate 903, the output end of the second motor 905 is fixedly connected with one end of the second screw rod 916, the second motor 905 is fixedly connected in the first fixing groove 10, the outer surface of the second screw rod 916 is matched with the inner part of the through hole 8, the distance between the substrate 912 and the electric arc device 4 is continuously reduced through the supporting platform 901, the fixing column 902, the cross plate 903, the first motor 904, the second motor 905, the first groove 906, the second groove 907, the base 908, the first screw rod 909, the connecting component 910, the through groove 911, the substrate 912, the connecting arm 913, the third groove 914, the limit component 915 and the second screw rod 916 under the matched use, the working efficiency and the low-temperature oxide film quality are improved, solves the problems that the existing CVD low-temperature oxide film preparation system affects the quality of the low-temperature oxide film, meanwhile, the continuous preparation of the CVD low-temperature oxide film cannot be realized, the preparation efficiency is lower, the connecting component 910 comprises a transmission rod 9101 and a first bevel gear 9102, the transmission rod 9101 is fixedly connected to the output end of a first motor 904, the first bevel gear 9102 is fixedly connected to the bottom end of a first screw rod 909, one end of the transmission rod 9101 is fixedly connected with a second bevel gear 9103, the second bevel gear 9103 is meshed with the first bevel gear 9102, the limiting component 915 comprises a sliding groove 9151 and a limiting block 9152, the sliding groove 9151 is arranged at the top of a supporting platform 901, the limiting block 9152 is fixedly connected to the bottom of a diaphragm 903, the outer surface of the limiting block 9152 is matched with the inner side of the sliding groove 9151, the diaphragm 903 is limited by the cooperation of the sliding groove 9151 and the limiting block 9152, the diaphragm 903 is prevented from overturning when the diaphragm 903 moves, the top opening of the third groove 914 groove cavity is arranged, the distance between the front and the back of the third groove 914 groove cavity is matched with the outer surface of the fixed column 902, the front surface of the second groove 907 groove cavity is arranged in an opening way, the bottom of the supporting platform 901 is provided with a second fixed groove 11, the second fixed groove 11 is communicated with the first groove 906, the front surface of the second fixed groove 11 groove cavity is provided with an opening way, the top of the fixed column 902 is hinged with a second box cover 12, the distance between the bottom of the fixed column 902 and the top of the supporting platform 901 is the same as the height of the substrate 912, the top of the second box cover 12 is fixedly connected with a handle 13, the substrate 912 is conveniently placed into the through groove 911 when the second box cover 12 and the handle 13 are matched, the first box cover 7 is provided with a first glass window 14, the back surface and two sides of the shell 3 are provided with second glass windows 15, the base 908 is positioned under the arc device 4, the width of diaphragm 903 is greater than the width of fixed column 902, and the bottom fixedly connected with backup pad 16 of casing 3 inner wall is favorable to the transfer line 9101 to support through setting up backup pad 16, and the inside of backup pad 16 rotates with the inside of transfer line 9101 to be connected.
The invention also discloses a preparation method of the CVD low-temperature oxide film continuous preparation system, which comprises the following steps:
s1, placing a lining plate: firstly, the first box cover 7 is opened, part of the substrate 912 is firstly placed into the through groove 911 from the bottom of the fixed column 902 in sequence, then the second box cover 12 is opened through the handle 13, part of the substrate 912 is then placed into the through groove 911 from the upper side of the fixed column 902, the substrate 912 positioned at the lowest side falls on the supporting platform 901, and then the second box cover 12 and the first box cover 7 are respectively covered;
s2, conveying a substrate: then, the second motor 905 is started to drive the second screw rod 916 to rotate, under the limiting action of the sliding groove 9151 and the limiting block 9152, the transverse plate 903 is driven to move, the lowest substrate 912 is driven to move until the substrate 912 is pushed onto the base 908, the transverse plate 903 is positioned below the fixed column 902, the substrate 912 passing through the groove 911 cannot fall down, and then the transverse plate 903 is driven by the second motor 905 to reset, wherein one substrate 912 falls on the supporting platform 901;
s3, plating: then, the first motor 904 is started to drive the transmission rod 9101 to rotate, so that the first screw rod 909 is driven to rotate under the meshing action between the second bevel gear 9103 and the first bevel gear 9102, and the base 908 is driven to rise under the limiting action of the first groove 906, so that the distance between the substrate 912 and the electric arc device 4 is reduced, the reaction is sufficient, the working efficiency and the low-temperature oxide film quality are improved, the problem that the low-temperature oxide film quality is influenced by the existing CVD low-temperature oxide film preparation system is solved, and after the processing is finished, the base 908 is driven to reset by the first motor 904;
s4, collecting a substrate: then, the second motor 905 is turned on again to drive the cross plate 903 to move, the substrate 912 on the supporting platform 901 is conveyed to the base 908, the substrate 912 is pushed by the substrate 912 before the substrate 912, the substrate 912 before the substrate 912 is pushed into the second groove 907 for collection, and then the first motor 904 is turned on again to drive the base 908 to ascend, so that the substrate 912 is lifted, and the distance between the substrate 912 and the electric arc device 4 is reduced, thereby realizing continuous preparation of the CVD low-temperature oxide film and the problem of lower preparation efficiency.
In the present invention, the second motor 905 in S2 and the first motor 904 in S3 are both three-phase asynchronous motors, and the second motor 905 and the first motor 904 are both electrically connected to an external power source.
And all that is not described in detail in this specification is well known to those skilled in the art.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. The utility model provides a continuous preparation system of CVD low temperature oxide film, includes brace table (1), standing groove (2) have been seted up at the top of brace table (1), the inside fixedly connected with casing (3) of standing groove (2), the inside of casing (3) is provided with electric arc device (4), one side of casing (3) is provided with intake pipe passageway (5) and outlet duct passageway (6) respectively, the front of casing (3) is provided with first case lid (7), its characterized in that: one side of the shell (3) is provided with a through hole (8) in a penetrating way, the supporting table (1) is provided with a first fixing groove (10), the first fixing groove (10) is communicated with the placing groove (2), and the shell (3) is provided with an auxiliary mechanism (9);
the auxiliary mechanism (9) comprises a supporting platform (901), a fixing column (902), a transverse plate (903), a first motor (904) and a second motor (905), wherein the supporting platform (901) is fixedly connected to the bottom of the inner wall of the shell (3), a first groove (906) and a second groove (907) are respectively formed in the top of the supporting platform (901), a base table (908) is connected to the inside of the first groove (906) in a sliding mode, a first screw rod (909) is connected to the inside of the base table (908) in a threaded mode, a connecting component (910) is arranged between the first motor (904) and the first screw rod (909), the bottom of the first screw rod (909) is connected to the bottom of the inner wall of the shell (3) in a rotating mode, a through groove (911) is formed in the top of the fixing column (902) in a penetrating mode, a substrate (912) is arranged in the through groove (911), a connecting arm (915) is fixedly connected to one side of the fixing column (902), a connecting component (913) is arranged between the inner wall of the connecting arm (903) and the inner wall of the shell (913) and one side of the transverse plate (913), a limiting component (914) is arranged between the connecting component (914) and one side of the transverse plate (913), the inside thread of the transverse plate (903) is connected with a second screw rod (916), the output end of the second motor (905) is fixedly connected with one end of the second screw rod (916), the second motor (905) is fixedly connected in the first fixing groove (10), and the outer surface of the second screw rod (916) is matched with the inside of the through hole (8);
the connecting assembly (910) comprises a transmission rod (9101) and a first bevel gear (9102), the transmission rod (9101) is fixedly connected to the output end of the first motor (904), the first bevel gear (9102) is fixedly connected to the bottom end of the first screw rod (909), one end of the transmission rod (9101) is fixedly connected with a second bevel gear (9103), and the second bevel gear (9103) is meshed with the first bevel gear (9102);
the limiting assembly (915) comprises a sliding groove (9151) and a limiting block (9152), the sliding groove (9151) is formed in the top of the supporting platform (901), the limiting block (9152) is fixedly connected to the bottom of the transverse plate (903), and the outer surface of the limiting block (9152) is matched with the inner part of the sliding groove (9151);
the top opening in third recess (914) cell chamber sets up, the distance between the front and back in third recess (914) cell chamber and the surface looks adaptation of fixed column (902), the front in second recess (907) cell chamber is the opening setting, second fixed slot (11) have been seted up to the bottom of supporting platform (901), communicate between second fixed slot (11) and first recess (906), the front in second fixed slot (11) cell chamber is the setting of seting up the mouth, the top of fixed column (902) articulates there is second case lid (12), the distance between the bottom of fixed column (902) and the top of supporting platform (901) is the same with the height of substrate (912), the top fixedly connected with handle (13) of second case lid (12).
2. The continuous preparation system for a CVD low temperature oxide film according to claim 1, wherein: the first box cover (7) is provided with a first glass window (14), the back surface and two sides of the shell (3) are respectively provided with a second glass window (15), and the base (908) is positioned under the electric arc device (4).
3. The continuous preparation system for a CVD low temperature oxide film according to claim 1, wherein: the width of diaphragm (903) is greater than the width of fixed column (902), the bottom fixedly connected with backup pad (16) of casing (3) inner wall, the inside of backup pad (16) rotates with the inside of transfer line (9101) to be connected.
4. A preparation method of a CVD low-temperature oxide film continuous preparation system is characterized by comprising the following steps: a CVD low temperature oxide film continuous production system according to any one of claims 1 to 3, comprising in particular the steps of:
s1, placing a lining plate: firstly, opening a first box cover (7), firstly placing part of substrates (912) into a through groove (911) from the bottom of a fixed column (902), then opening a second box cover (12) through a handle (13), then placing part of substrates (912) into the through groove (911) from the upper part of the fixed column (902), placing the substrate (912) positioned at the lowest part on a supporting platform (901), and then respectively covering the second box cover (12) and the first box cover (7);
s2, conveying a substrate: then, a second motor (905) is started to drive a second screw rod (916) to rotate, under the limiting action of a sliding groove (9151) and a limiting block (9152), a transverse plate (903) is driven to move, and a bottommost substrate (912) is driven to move until the substrate (912) is pushed onto a base table (908), and the transverse plate (903) is partially positioned below a fixed column (902), so that the substrate (912) passing through the groove (911) cannot fall down, and then the transverse plate (903) is driven to reset by the second motor (905), and at the moment, one substrate (912) falls on a supporting platform (901);
s3, plating: then, the first motor (904) is started to drive the transmission rod (9101) to rotate, so that the first screw rod (909) is driven to rotate under the meshing action between the second bevel gear (9103) and the first bevel gear (9102), the base station (908) is driven to ascend under the limiting action of the first groove (906), the distance between the substrate (912) and the electric arc device (4) is shortened, the reaction is enabled to be full, the working efficiency and the low-temperature oxide film quality are improved, the problem that the existing CVD low-temperature oxide film preparation system influences the low-temperature oxide film quality is solved, and after the processing is finished, the base station (908) is driven to reset by the first motor (904);
s4, collecting a substrate: then, the second motor (905) is started again to drive the transverse plate (903) to move, the substrate (912) on the supporting platform (901) is conveyed to the base (908), the substrate (912) is utilized to push the previous substrate (912), the previous substrate (912) is further pushed into the second groove (907) to be collected, then the first motor (904) is started again to drive the base (908) to lift the substrate (912), and therefore the distance between the substrate (912) and the electric arc device (4) is reduced, and the problems of continuous preparation of a CVD low-temperature oxide film and low preparation efficiency are achieved.
5. The method for preparing the continuous preparation system of the CVD low temperature oxide film according to claim 4, wherein the method comprises the following steps: the second motor (905) in the S2 and the first motor (904) in the S3 are three-phase asynchronous motors, and the second motor (905) and the first motor (904) are electrically connected with an external power supply.
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Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5407314A (en) * | 1992-10-01 | 1995-04-18 | Leybold Aktiengesellschaft | Apparatus for synchronizing loading and unloading of substrates with turntable movement in a coating chamber |
| JP2000239850A (en) * | 1999-02-16 | 2000-09-05 | Hitachi Maxell Ltd | Continuous plasma cvd device and continuous plasma cvd method |
| JP2004063925A (en) * | 2002-07-31 | 2004-02-26 | Mitsubishi Heavy Ind Ltd | Plasma processing apparatus and method |
| CN101008082A (en) * | 2007-02-01 | 2007-08-01 | 南京航空航天大学 | CVD diamond film continuous preparation system |
| WO2008135444A1 (en) * | 2007-05-02 | 2008-11-13 | Commissariat A L'energie Atomique | Method and device for preparing a multilayered coating on a substrate |
| CN101525742A (en) * | 2009-04-20 | 2009-09-09 | 南京大学 | Method for sample loading, sampling and sample transferring of chemical vapor deposition material growing equipment |
| TW201109462A (en) * | 2009-09-08 | 2011-03-16 | Ind Tech Res Inst | Coating machine with lifting system |
| CN107275182A (en) * | 2016-03-31 | 2017-10-20 | 株式会社日立国际电气 | The manufacture method of lining processor and semiconductor devices |
| CN108193195A (en) * | 2018-02-02 | 2018-06-22 | 德化利鑫新材料科技有限公司 | A kind of intelligent chemical gas phase reaction precipitation equipment for being used to prepare graphene |
| CN208150972U (en) * | 2018-01-10 | 2018-11-27 | 德化利鑫新材料科技有限公司 | A kind of chemical gas phase reaction precipitation equipment suitable for preparing graphene in batches |
| CN109390199A (en) * | 2017-08-08 | 2019-02-26 | Asm Ip控股有限公司 | Lifting device for substrates and reactor comprising lifting device for substrates |
| CN209178473U (en) * | 2018-08-01 | 2019-07-30 | 北京蜃景光电科技有限公司 | Film deposition apparatus and system |
| CN210134163U (en) * | 2019-04-29 | 2020-03-10 | 通威太阳能（成都）有限公司 | High-temperature-resistant transmission track for coating equipment |
| CN211946124U (en) * | 2019-12-30 | 2020-11-17 | 上海东贝真空设备有限公司 | CVD water platform lifting and rotating device |
| CN113046727A (en) * | 2021-03-12 | 2021-06-29 | 广州大通信息科技有限公司 | Base plate CVD chemical gas tank precipitation equipment based on semiconductor production |
-
2021
- 2021-09-15 CN CN202111080360.3A patent/CN113862639B/en active Active
Patent Citations (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5407314A (en) * | 1992-10-01 | 1995-04-18 | Leybold Aktiengesellschaft | Apparatus for synchronizing loading and unloading of substrates with turntable movement in a coating chamber |
| JP2000239850A (en) * | 1999-02-16 | 2000-09-05 | Hitachi Maxell Ltd | Continuous plasma cvd device and continuous plasma cvd method |
| JP2004063925A (en) * | 2002-07-31 | 2004-02-26 | Mitsubishi Heavy Ind Ltd | Plasma processing apparatus and method |
| CN101008082A (en) * | 2007-02-01 | 2007-08-01 | 南京航空航天大学 | CVD diamond film continuous preparation system |
| WO2008135444A1 (en) * | 2007-05-02 | 2008-11-13 | Commissariat A L'energie Atomique | Method and device for preparing a multilayered coating on a substrate |
| CN101525742A (en) * | 2009-04-20 | 2009-09-09 | 南京大学 | Method for sample loading, sampling and sample transferring of chemical vapor deposition material growing equipment |
| TW201109462A (en) * | 2009-09-08 | 2011-03-16 | Ind Tech Res Inst | Coating machine with lifting system |
| CN107275182A (en) * | 2016-03-31 | 2017-10-20 | 株式会社日立国际电气 | The manufacture method of lining processor and semiconductor devices |
| CN109390199A (en) * | 2017-08-08 | 2019-02-26 | Asm Ip控股有限公司 | Lifting device for substrates and reactor comprising lifting device for substrates |
| CN208150972U (en) * | 2018-01-10 | 2018-11-27 | 德化利鑫新材料科技有限公司 | A kind of chemical gas phase reaction precipitation equipment suitable for preparing graphene in batches |
| CN108193195A (en) * | 2018-02-02 | 2018-06-22 | 德化利鑫新材料科技有限公司 | A kind of intelligent chemical gas phase reaction precipitation equipment for being used to prepare graphene |
| CN209178473U (en) * | 2018-08-01 | 2019-07-30 | 北京蜃景光电科技有限公司 | Film deposition apparatus and system |
| CN210134163U (en) * | 2019-04-29 | 2020-03-10 | 通威太阳能（成都）有限公司 | High-temperature-resistant transmission track for coating equipment |
| CN211946124U (en) * | 2019-12-30 | 2020-11-17 | 上海东贝真空设备有限公司 | CVD water platform lifting and rotating device |
| CN113046727A (en) * | 2021-03-12 | 2021-06-29 | 广州大通信息科技有限公司 | Base plate CVD chemical gas tank precipitation equipment based on semiconductor production |
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|---|---|
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