CN113862639A - Continuous preparation system and preparation method of CVD low-temperature oxide film - Google Patents
Continuous preparation system and preparation method of CVD low-temperature oxide film Download PDFInfo
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- CN113862639A CN113862639A CN202111080360.3A CN202111080360A CN113862639A CN 113862639 A CN113862639 A CN 113862639A CN 202111080360 A CN202111080360 A CN 202111080360A CN 113862639 A CN113862639 A CN 113862639A
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- 238000010168 coupling process Methods 0.000 claims abstract description 3
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- 238000007254 oxidation reaction Methods 0.000 abstract description 7
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention discloses a continuous preparation system and a continuous preparation method for a CVD (chemical vapor deposition) low-temperature oxide film, wherein an auxiliary mechanism comprises a supporting platform, a fixed column, a transverse plate, a first motor and a second motor, wherein the supporting platform is fixedly connected to the bottom of the inner wall of a shell. This continuous preparation system of CVD low temperature oxidation film and preparation method, through supporting platform, the fixed column, the diaphragm, first motor, the second motor, first recess, the second recess, the base station, first lead screw, coupling assembling, lead to the groove, the substrate, the linking arm, the third recess, under spacing subassembly and the cooperation use of second lead screw, realize the independent distance between reduction substrate and the electric arc device in succession, make the reaction abundant, work efficiency and low temperature oxidation film quality have been improved, it influences low temperature oxidation film quality to have solved current CVD low temperature oxidation film preparation system, and simultaneously, can not realize the continuous preparation of CVD low temperature oxidation film, the lower problem of preparation efficiency.
Description
Technical Field
The invention relates to the technical field of film material preparation, in particular to a continuous preparation system and a continuous preparation method of a CVD (chemical vapor deposition) low-temperature oxide film.
Background
CVD refers to gas phase reactions at high temperatures. For example, a method of precipitating inorganic materials such as metals, oxides, and carbides by thermal decomposition of metal halides, organic metals, hydrocarbons, etc., hydrogen reduction, or chemical reaction of a mixed gas thereof at a high temperature. This technique was originally developed as a means for coating, but is applied not only to the coating of heat-resistant materials but also to the purification of high-purity metals, powder synthesis, semiconductor thin films, and the like, and is a very characteristic technical field. CVD introduces vapor containing gaseous or liquid reactants for forming the film elements and other gases required for the reaction into a reaction chamber to carry out chemical reaction on the surface of the substrate to form the film. Many thin films in very large scale integrated circuits are prepared by CVD methods. After the CVD treatment, the adhesion of the surface treatment film is improved by about 30%, and scratches generated during forming such as bending and drawing of high-strength steel are prevented.
The conventional CVD low-temperature oxide film preparation system is not convenient to adjust the distance between a deposition base station and a direct current arc plasma jet area so as to influence the quality of a low-temperature oxide film deposited on the deposition base station, and meanwhile, the conventional CVD low-temperature oxide film preparation system cannot realize the continuous preparation of the CVD low-temperature oxide film and has low preparation efficiency, so that the invention provides the CVD low-temperature oxide film continuous preparation system and the preparation method so as to solve the problems.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a continuous preparation system and a preparation method of a CVD low-temperature oxide film, and solves the problems that the quality of the low-temperature oxide film is influenced by the conventional CVD low-temperature oxide film preparation system, the continuous preparation of the CVD low-temperature oxide film cannot be realized, and the preparation efficiency is low.
In order to achieve the purpose, the invention is realized by the following technical scheme: the utility model provides a continuous preparation system of CVD low temperature oxide film, includes the brace table, the standing groove has been seted up at the top of brace table, the inside fixedly connected with casing of standing groove, the inside of casing is provided with electric arc device, one side of casing is provided with inlet tube passageway and outlet duct passageway respectively, the front of casing is provided with first case lid, one side of casing is run through and is seted up the through-hole, set up first fixed slot on the brace table, communicate between first fixed slot and the standing groove, be provided with complementary unit on the casing.
The auxiliary mechanism comprises a supporting platform, a fixed column, a transverse plate, a first motor and a second motor, wherein the supporting platform is fixedly connected to the bottom of the inner wall of the shell, a first groove and a second groove are respectively formed in the top of the supporting platform, a base station is slidably connected to the inside of the first groove, a first lead screw is connected to the inside of the base station in a threaded manner, a connecting assembly is arranged between the first motor and the first lead screw, the bottom end of the first lead screw is rotatably connected with the bottom of the inner wall of the shell, the first motor is fixedly connected to the bottom of the inner wall of the shell, a through groove is formed in the top of the fixed column in a penetrating manner, a substrate is arranged in the through groove, a connecting arm is fixedly connected to one side of the fixed column, a third groove is formed in one side of the transverse plate in a penetrating manner, and a limiting assembly is arranged between the transverse plate and the supporting platform, the interior threaded connection of diaphragm has the second lead screw, the output of second motor and the one end fixed connection of second lead screw, second motor fixed connection is in first fixed slot, the surface of second lead screw and the inside looks adaptation of through-hole.
Preferably, the connecting assembly comprises a transmission rod and a first bevel gear, the transmission rod is fixedly connected to the output end of the first motor, the first bevel gear is fixedly connected to the bottom end of the first screw rod, one end of the transmission rod is fixedly connected with a second bevel gear, and the second bevel gear is meshed with the first bevel gear.
Preferably, the limiting assembly comprises a sliding groove and a limiting block, the sliding groove is formed in the top of the supporting platform, the limiting block is fixedly connected to the bottom of the transverse plate, and the outer surface of the limiting block is matched with the inner portion of the sliding groove.
Preferably, the top opening of the third groove cavity is arranged, the distance between the front and the back of the third groove cavity is matched with the outer surface of the fixing column, and the front face of the second groove cavity is arranged in an opening mode.
Preferably, a second fixing groove is formed in the bottom of the supporting platform, the second fixing groove is communicated with the first groove, and an opening is formed in the front face of a groove cavity of the second fixing groove.
Preferably, the top of the fixed column is hinged to a second box cover, the distance between the bottom of the fixed column and the top of the supporting platform is the same as the height of the substrate, and the top of the second box cover is fixedly connected with a handle.
Preferably, a first glass window is arranged on the first box cover, second glass windows are arranged on the back face and two sides of the shell, and the base station is located under the electric arc device.
Preferably, the width of diaphragm is greater than the width of fixed post, the bottom fixedly connected with backup pad of shells inner wall, the inside of backup pad is connected with the inside rotation of transfer line.
The invention also discloses a preparation method of the CVD low-temperature oxide film continuous preparation system, which comprises the following steps:
s1, placing a lining board: firstly, opening a first box cover, firstly, sequentially putting part of substrates into through grooves from the bottoms of fixed columns, then, opening a second box cover through a handle, then putting part of substrates into the through grooves from the upper parts of the fixed columns, enabling the substrates positioned at the lowest part to fall on a supporting platform, and then, respectively covering the second box cover and the first box cover;
s2, conveying substrate: then, a second motor is started to drive a second screw rod to rotate, under the limiting action of a sliding groove and a limiting block, a transverse plate is driven to move, so that the bottommost substrate is driven to move until the substrate is pushed to the base station, the transverse plate part is located below a fixed column, so that the substrate in the through groove cannot fall off, then the transverse plate is driven to reset by the second motor, and at the moment, one substrate falls on the supporting platform;
s3, plating: then, the first motor is started to drive the transmission rod to rotate, so that the first screw rod is driven to rotate under the meshing action between the second bevel gear and the first bevel gear, the base station is driven to ascend under the limiting action of the first groove, the distance between the substrate and the electric arc device is reduced, the reaction is sufficient, the working efficiency and the quality of the low-temperature oxide film are improved, the problem that the quality of the low-temperature oxide film is influenced by the existing CVD low-temperature oxide film preparation system is solved, and after the low-temperature oxide film is processed, the base station is driven to reset by the first motor;
s4, collecting substrate: and then, starting the second motor again to drive the transverse plate to move, conveying the substrate on the supporting platform to the base station, pushing the previous substrate by using the substrate, pushing the previous substrate to the second groove for collection, starting the first motor again to drive the base station to ascend, and lifting the substrate, so that the distance between the substrate and the electric arc device is reduced, the continuous preparation of the CVD low-temperature oxidation film is realized, and the preparation efficiency is low.
Preferably, the second motor in S2 and the first motor in S3 are both three-phase asynchronous motors, and the second motor and the first motor are both electrically connected to an external power source.
Advantageous effects
The invention provides a continuous preparation system and a continuous preparation method of a CVD low-temperature oxide film. Compared with the prior art, the method has the following beneficial effects:
(1) the CVD low-temperature oxide film continuous preparation system comprises an auxiliary mechanism, a supporting platform, a fixed column, a transverse plate, a first motor and a second motor, wherein the supporting platform is fixedly connected to the bottom of the inner wall of a shell, the top of the supporting platform is respectively provided with a first groove and a second groove, the inside of the first groove is connected with a base station in a sliding manner, the inside of the base station is in threaded connection with a first lead screw, a connecting component is arranged between the first motor and the first lead screw, the bottom end of the first lead screw is rotatably connected with the bottom of the inner wall of the shell, the first motor is fixedly connected to the bottom of the inner wall of the shell, the top of the fixed column is provided with a through groove in a penetrating manner, a substrate is arranged inside the through groove, one side of the fixed column is fixedly connected with a connecting arm, one side of the connecting arm is fixedly connected with one side of the inner wall of the shell, one side of the transverse plate is provided with a third groove in a penetrating manner, and a limiting component is arranged between the transverse plate and the supporting platform, the inside threaded connection of diaphragm has the second lead screw, the output of second motor and the one end fixed connection of second lead screw, second motor fixed connection is in first fixed slot, the surface of second lead screw and the inside looks adaptation of through-hole, through supporting platform, the fixed column, the diaphragm, first motor, the second motor, first recess, the second recess, the base station, first lead screw, coupling assembling, logical groove, the substrate, the linking arm, the third recess, spacing subassembly and second lead screw's cooperation is used down, realize the independent distance between reduction substrate and the electric arc device in succession, make the reaction abundant, work efficiency and low temperature oxide film quality have been improved, it influences low temperature oxide film quality to have solved current low temperature oxide film preparation system, and simultaneously, can not realize the continuous preparation of CVD low temperature oxide film, the lower problem of preparation efficiency.
(2) According to the continuous preparation system and the preparation method of the CVD low-temperature oxide film, the limiting assembly comprises the sliding groove and the limiting block, the sliding groove is formed in the top of the supporting platform, the limiting block is fixedly connected to the bottom of the transverse plate, the outer surface of the limiting block is matched with the inner portion of the sliding groove, the transverse plate is limited through the cooperation of the sliding groove and the limiting block, and the transverse plate is prevented from being overturned when moving.
(3) According to the continuous preparation system and the continuous preparation method for the CVD low-temperature oxide film, the second box cover is hinged to the top of the fixing column, the distance between the bottom of the fixing column and the top of the supporting platform is the same as the height of the substrate, the handle is fixedly connected to the top of the second box cover, and the substrate can be conveniently placed into the through groove under the matched use of the second box cover and the handle.
(4) According to the CVD low-temperature oxide film continuous preparation system and the preparation method, the supporting plate is fixedly connected to the bottom of the inner wall of the shell, the interior of the supporting plate is rotatably connected with the interior of the transmission rod, and the supporting plate is favorable for supporting the transmission rod.
Drawings
FIG. 1 is a perspective view of the present invention;
FIG. 2 is a front view of the internal structure of the present invention;
FIG. 3 is an enlarged view of a portion of the invention at A in FIG. 2;
FIG. 4 is an enlarged view of a portion of the present invention at B of FIG. 2;
FIG. 5 is a perspective view of the support platform of the present invention;
FIG. 6 is a partial cross-sectional view of the support platform of the present invention;
FIG. 7 is a perspective view of the fixing post of the present invention;
FIG. 8 is a partial cross-sectional view of the stationary post of the present invention;
FIG. 9 is a perspective view of the cross board of the present invention;
FIG. 10 is a process flow diagram of the present invention.
In the figure: 1-supporting table, 2-placing groove, 3-shell, 4-electric arc device, 5-air inlet pipe channel, 6-air outlet pipe channel, 7-first box cover, 8-through hole, 9-auxiliary mechanism, 901-supporting platform, 902-fixing column, 903-transverse plate, 904-first motor, 905-second motor, 906-first groove, 907-second groove, 908-base table, 909-first screw rod, 910-connecting assembly, 9101-driving rod, 9102-first bevel gear, 9103-second bevel gear, 911-through groove, 912-substrate, 913-connecting arm, 914-third groove, 915-limiting assembly, 9151-sliding groove, 9152-limiting block, 916-second screw rod, 10-first fixing groove, 11-a limiting block, 12-a second box cover, 13-a handle, 14-a first glass window, 15-a second glass window and 16-a supporting plate.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-10, the present invention provides a technical solution: a CVD low-temperature oxide film continuous preparation system comprises a supporting table 1, wherein a placing groove 2 is formed in the top of the supporting table 1, a shell 3 is fixedly connected to the inside of the placing groove 2, an electric arc device 4 is arranged inside the shell 3, an air inlet pipe channel 5 and an air outlet pipe channel 6 are respectively arranged on one side of the shell 3, a first box cover 7 is arranged on the front side of the shell 3, a through hole 8 is formed in one side of the shell 3 in a penetrating mode, a first fixing groove 10 is formed in the supporting table 1, the first fixing groove 10 is communicated with the placing groove 2, and an auxiliary mechanism 9 is arranged on the shell 3; the auxiliary mechanism 9 comprises a supporting platform 901, a fixed column 902, a horizontal plate 903, a first motor 904 and a second motor 905, the supporting platform 901 is fixedly connected to the bottom of the inner wall of the housing 3, the outer surface of the supporting platform 901 is attached to the inner wall of the housing 3, the top of the supporting platform 901 is respectively provided with a first groove 906 and a second groove 907, the inside of the first groove 906 is slidably connected with a base 908, the inside of the base 908 is in threaded connection with a first screw 909, a connecting component 910 is arranged between the first motor 904 and the first screw 909, the bottom end of the first screw 909 is rotatably connected with the bottom of the inner wall of the housing 3, the first motor 904 is fixedly connected to the bottom of the inner wall of the housing 3, the top of the fixed column 902 is provided with a through groove 911 in a penetrating manner, a substrate 912 is arranged inside the through groove 911, one side of the fixed column 902 is fixedly connected with a connecting arm 913, one side of the connecting arm 913 is fixedly connected with one side of the inner wall of the housing 3, a third groove 914 is arranged on one side of the transverse plate 903 in a penetrating manner, a limiting component 915 is arranged between the transverse plate 903 and the supporting platform, a second screw 916 is connected to the inner thread of the transverse plate 903, the output end of a second motor 905 is fixedly connected with one end of the second screw 916, the second motor 905 is fixedly connected in the first fixing groove 10, the outer surface of the second screw 916 is matched with the inner part of the through hole 8, and under the matching use of the supporting platform 901, the fixing column 902, the transverse plate 903, the first motor 904, the second motor 905, the first groove 906, the second groove 907, the base station 908, the first screw 909, the connecting component 910, the through groove 911, the substrate 912, the connecting arm 913, the third groove 914, the limiting component 915 and the second screw 916, the distance between the substrate 912 and the arc device 4 is continuously reduced, so that the reaction is sufficient, the working efficiency and the low-temperature oxide film quality are improved, and the problem that the low-temperature oxide film quality is influenced by the existing CVD low-temperature oxide film preparation system is solved, meanwhile, the continuous preparation of the CVD low-temperature oxide film cannot be realized, and the preparation efficiency is low, the connecting assembly 910 includes a transmission rod 9101 and a first bevel gear 9102, the transmission rod 9101 is fixedly connected to the output end of the first motor 904, the first bevel gear 9102 is fixedly connected to the bottom end of the first lead screw 909, one end of the transmission rod 9101 is fixedly connected with a second bevel gear 9103, the second bevel gear 9103 is engaged with the first bevel gear 9102, the limiting assembly 915 includes a sliding groove 9151 and a limiting block 9152, the sliding groove 9151 is arranged at the top of the supporting platform 901, the limiting block 9152 is fixedly connected to the bottom of the transverse plate 903, the outer surface of the limiting block 9152 is matched with the inside of the sliding groove 9151, the transverse plate 903 is limited by the matching of the sliding groove 9151 and the limiting block 9152, the overturning of the transverse plate 903 is prevented when the transverse plate 903 moves, the top opening of the groove of the third groove 914 is arranged, and the distance between the front and the back of the groove of the third groove 914 is matched with the outer surface of the fixing column 902, the front of the cavity of the second groove 907 is open, the bottom of the supporting platform 901 is provided with a second fixing groove 11, the second fixing groove 11 is communicated with the first groove 906, the front of the cavity of the second fixing groove 11 is open, the top of the fixing column 902 is hinged with a second box cover 12, the distance between the bottom of the fixing column 902 and the top of the supporting platform 901 is the same as the height of the substrate 912, the top of the second box cover 12 is fixedly connected with a handle 13, the substrate 912 is conveniently placed in the through groove 911 under the matching use of the second box cover 12 and the handle 13, the first box cover 7 is provided with a first glass window 14, the back and two sides of the shell 3 are provided with second glass windows 15, the base 908 is positioned under the electric arc device 4, the width of the transverse plate 903 is larger than that of the fixing column 902, the bottom of the inner wall of the shell 3 is fixedly connected with a supporting plate 16 through the arrangement of the supporting plate 16, the transmission rod 9101 is supported, and the inside of the support plate 16 is rotatably connected with the inside of the transmission rod 9101.
The invention also discloses a preparation method of the CVD low-temperature oxide film continuous preparation system, which comprises the following steps:
s1, placing a lining board: firstly, the first box cover 7 is opened, a part of the substrate 912 is put into the through slots 911 in sequence from the bottom of the fixed column 902, then the second box cover 12 is opened through the handle 13, a part of the substrate 912 is put into the through slots 911 from the upper part of the fixed column 902, the substrate 912 positioned at the lowest part falls on the supporting platform 901, and then the second box cover 12 and the first box cover 7 are respectively covered;
s2, conveying substrate: then, the second motor 905 is started to drive the second screw 916 to rotate, under the limiting action of the chute 9151 and the limiting block 9152, the transverse plate 903 is driven to move, the lowermost substrate 912 is driven to move until the substrate 912 is pushed onto the base station 908, the transverse plate 903 is partially positioned below the fixed column 902, the substrate 912 in the through groove 911 cannot fall off, and then the second motor 905 is used for driving the transverse plate 903 to reset, and at the moment, one substrate 912 falls on the supporting platform 901;
s3, plating: then, the first motor 904 is started to further drive the transmission rod 9101 to rotate, so that the first screw 909 is driven to rotate under the meshing action between the second bevel gear 9103 and the first bevel gear 9102, the base 908 is driven to ascend under the limiting action of the first groove 906, the distance between the substrate 912 and the arc device 4 is reduced, the reaction is sufficient, the working efficiency and the quality of the low-temperature oxide film are improved, the problem that the quality of the low-temperature oxide film is influenced by the existing CVD low-temperature oxide film preparation system is solved, and after the processing is finished, the base 908 is driven to reset by the first motor 904;
s4, collecting substrate: then, the second motor 905 is started again to drive the transverse plate 903 to move, the substrate 912 on the supporting platform 901 is conveyed to the base station 908, the substrate 912 is pushed to push the previous substrate 912, the previous substrate 912 is further pushed to the second groove 907 to be collected, then the first motor 904 is started again to drive the base station 908 to ascend, the substrate 912 is lifted, and therefore the distance between the substrate 912 and the arc device 4 is shortened, continuous preparation of the CVD low-temperature oxidation film is achieved, and the preparation efficiency is low.
In the present invention, the second motor 905 in S2 and the first motor 904 in S3 are both three-phase asynchronous motors, and both the second motor 905 and the first motor 904 are electrically connected to an external power source.
And those not described in detail in this specification are well within the skill of those in the art.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. The utility model provides a continuous preparation system of CVD low temperature oxide film, includes brace table (1), standing groove (2) have been seted up at the top of brace table (1), the inside fixedly connected with casing (3) of standing groove (2), the inside of casing (3) is provided with electric arc device (4), one side of casing (3) is provided with inlet pipe passageway (5) and outlet duct passageway (6) respectively, the front of casing (3) is provided with first case lid (7), its characterized in that: a through hole (8) penetrates through one side of the shell (3), a first fixing groove (10) is formed in the supporting table (1), the first fixing groove (10) is communicated with the placing groove (2), and an auxiliary mechanism (9) is arranged on the shell (3);
the auxiliary mechanism (9) comprises a supporting platform (901), a fixed column (902), a transverse plate (903), a first motor (904) and a second motor (905), the supporting platform (901) is fixedly connected to the bottom of the inner wall of the shell (3), a first groove (906) and a second groove (907) are respectively formed in the top of the supporting platform (901), a base (908) is slidably connected to the inside of the first groove (906), a first lead screw (909) is connected to the inner thread of the base (908), a connecting assembly (910) is arranged between the first motor (904) and the first lead screw (909), the bottom end of the first lead screw (909) is rotatably connected with the bottom of the inner wall of the shell (3), the first motor (904) is fixedly connected to the bottom of the inner wall of the shell (3), a through groove (911) is formed in the top of the fixed column (902) in a penetrating mode, the inside of logical groove (911) is provided with substrate (912), one side fixedly connected with linking arm (913) of fixed column (902), one side of linking arm (913) and one side fixed connection of casing (3) inner wall, third recess (914) have been run through to one side of diaphragm (903), be provided with spacing subassembly (915) between diaphragm (903) and the supporting platform, the internal thread of diaphragm (903) is connected with second lead screw (916), the output of second motor (905) and the one end fixed connection of second lead screw (916), second motor (905) fixed connection is in first fixed slot (10), the surface of second lead screw (916) and the inside looks adaptation of through-hole (8).
2. The continuous CVD low-temperature oxide film forming system according to claim 1, wherein: coupling assembling (910) are including transfer line (9101) and first bevel gear (9102), transfer line (9101) fixed connection is on the output of first motor (904), first bevel gear (9102) fixed connection is on the bottom of first lead screw (909), the one end fixedly connected with second bevel gear (9103) of transfer line (9101), mesh between second bevel gear (9103) and first bevel gear (9102).
3. The continuous CVD low-temperature oxide film forming system according to claim 1, wherein: spacing subassembly (915) include spout (9151) and stopper (9152), the top at supporting platform (901) is seted up in spout (9151), stopper (9152) fixed connection is in the bottom of diaphragm (903), the inside looks adaptation of the surface and the spout (9151) of stopper (9152).
4. The continuous CVD low-temperature oxide film forming system according to claim 1, wherein: the top opening of the third groove (914) cavity is arranged, the distance between the front and the back of the third groove (914) cavity is matched with the outer surface of the fixing column (902), and the front surface of the second groove (907) cavity is arranged in an opening mode.
5. The continuous CVD low-temperature oxide film forming system according to claim 1, wherein: the bottom of the supporting platform (901) is provided with a second fixing groove (11), the second fixing groove (11) is communicated with the first groove (906), and the front of a groove cavity of the second fixing groove (11) is provided with an opening.
6. The continuous CVD low-temperature oxide film forming system according to claim 1, wherein: the top of the fixed column (902) is hinged with a second box cover (12), the distance between the bottom of the fixed column (902) and the top of the supporting platform (901) is the same as the height of the substrate (912), and the top of the second box cover (12) is fixedly connected with a handle (13).
7. The continuous CVD low-temperature oxide film forming system according to claim 1, wherein: the first box cover (7) is provided with a first glass window (14), the back and two sides of the shell (3) are provided with second glass windows (15), and the base (908) is located under the electric arc device (4).
8. The continuous CVD low-temperature oxide film forming system according to claim 1, wherein: the width of diaphragm (903) is greater than the width of fixed column (902), the bottom fixedly connected with backup pad (16) of casing (3) inner wall, the inside of backup pad (16) is connected with the inside rotation of transfer line (9101).
9. A preparation method of a CVD low-temperature oxide film continuous preparation system is characterized by comprising the following steps: the method specifically comprises the following steps:
s1, placing a lining board: firstly, opening a first box cover (7), firstly, sequentially putting part of substrates (912) into through grooves (911) from the bottoms of fixed columns (902), then, opening a second box cover (12) through a handle (13), then putting part of the substrates (912) into the through grooves (911) from the upper parts of the fixed columns (902), enabling the substrates (912) positioned at the lowest part to fall on a supporting platform (901), and then respectively covering the second box cover (12) and the first box cover (7);
s2, conveying substrate: then, a second motor (905) is started, so that a second screw rod (916) is driven to rotate, under the limiting action of a sliding groove (9151) and a limiting block (9152), a transverse plate (903) is driven to move, the bottommost substrate (912) is driven to move, the substrate (912) is pushed to the base station (908), the transverse plate (903) is partially positioned below a fixed column (902), the substrate (912) of the through groove (911) cannot fall off, then the transverse plate (903) is driven to reset by the second motor (905), and at the moment, one substrate (912) falls on the supporting platform (901);
s3, plating: then, the first motor (904) is started, the transmission rod (9101) is driven to rotate, the base platform (908) is driven to ascend under the meshing action between the second bevel gear (9103) and the first bevel gear (9102), the first screw rod (909) is driven to rotate, the limiting action of the first groove (906) is utilized to drive the base platform (908) to ascend, the distance between the substrate (912) and the arc device (4) is reduced, the reaction is sufficient, the working efficiency and the quality of the low-temperature oxide film are improved, the problem that the quality of the low-temperature oxide film is influenced by the existing CVD low-temperature oxide film preparation system is solved, and after the processing is finished, the first motor (904) is utilized to drive the base platform (908) to reset;
s4, collecting substrate: and then, starting the second motor (905) again to drive the transverse plate (903) to move, conveying the substrate (912) on the supporting platform (901) to the base station (908), pushing the previous substrate (912) by using the substrate (912), further pushing the previous substrate (912) to the second groove (907) for collection, then starting the first motor (904) again to drive the base station (908) to ascend, and ascending the substrate (912), so that the distance between the substrate (912) and the arc device (4) is reduced, and the problem of low preparation efficiency is solved.
10. The method according to claim 9, wherein the CVD low-temperature oxide film continuous fabrication system comprises: the second motor (905) in the S2 and the first motor (904) in the S3 are both three-phase asynchronous motors, and the second motor (905) and the first motor (904) are both electrically connected with an external power supply.
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