JP2867526B2 - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JP2867526B2 JP2867526B2 JP2007572A JP757290A JP2867526B2 JP 2867526 B2 JP2867526 B2 JP 2867526B2 JP 2007572 A JP2007572 A JP 2007572A JP 757290 A JP757290 A JP 757290A JP 2867526 B2 JP2867526 B2 JP 2867526B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- electrostatic chuck
- arm
- electrodes
- relay
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【発明の詳細な説明】 〔概 要〕 半導体製造装置に関し、 ウェーハの残留電荷を効果的に活用したり除電したり
して、静電チャックからのウェーハの離脱が容易になる
ことを目的とし、 静電チャックと、電源装置とを有し、前記静電チャッ
クは、ウェーハを吸着するものであって、吸着面に絶縁
膜と、絶縁膜の下に交互に配設された電極と、電極から
導出された端子とを有するものであり、前記電源装置
は、電極に直流電圧を印加するものであって、２つの高
圧電源と、端子に接続される出力端子と、接地端子と、
極性切替え手段とを有するものであり、前記極性切替え
手段は、一方が接地端子、他方が出力端子に極性切替え
可能に接続されるように、高圧電源の夫々に設けられる
ものであり、前記極性切替え手段は、静電チャックに吸
着されているウェーハが離脱される際、ウェーハが有す
る残留電荷と同極性の電圧を出力端子を介して電極に印
加するものであるように構成する、また、静電チャック
と、搬送アームと、継電器とを有し、前記静電チャック
は、ウェーハを吸着するものであって、装置本体に内設
されているものであり、前記搬送アームは、ウェーハを
静電チャックに着脱するものであって、装置本体に気密
可能に貫通支持されたアーム駆動部と、装置本体に内設
され、かつアーム駆動部に旋回および昇降可能に枢支さ
れたアーム本体と、アーム本体の先端に静電チャックに
対面するように設けられたウェーハトレイとを有するも
のであり、前記ウェーハトレイは、アーム駆動部と電気
的に接続されているものであり、前記継電器は、装置本
体と電気的に絶縁されたアーム駆動部を接地するもので
あって、常時閉成されており、前記継電器は、搬送アー
ムが静電チャックに吸着されているウェーハを受ける取
る際、ウェーハトレイがウェーハに当接する直前に開成
され、かつ当接した直後に閉成されるものであるように
構成する。DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a semiconductor manufacturing apparatus, which makes it easy to detach a wafer from an electrostatic chuck by effectively utilizing a residual charge of the wafer or removing static electricity. An electrostatic chuck, and a power supply device, wherein the electrostatic chuck is for chucking the wafer, and has an insulating film on the suction surface, electrodes alternately arranged below the insulating film, and And a power supply device for applying a DC voltage to the electrodes, two high-voltage power supplies, an output terminal connected to the terminal, and a ground terminal.
Polarity switching means, wherein the polarity switching means is provided in each of the high-voltage power supplies such that one is connected to the ground terminal and the other is connected to the output terminal so as to be switchable in polarity. The means is configured to apply a voltage of the same polarity as the residual charge of the wafer to the electrode via the output terminal when the wafer held on the electrostatic chuck is detached, and A chuck, a transfer arm, and a relay, wherein the electrostatic chuck is for adsorbing the wafer and is provided in the apparatus main body, and the transfer arm is configured to hold the wafer by the electrostatic chuck. An arm drive unit which is detachably attached to the device main body and which is supported by the device main body so as to be airtight; A wafer tray provided at the end of the arm main body so as to face the electrostatic chuck, wherein the wafer tray is electrically connected to an arm driving unit, and the relay is an apparatus. The arm drive unit electrically insulated from the main body is grounded, and is always closed, and the relay is configured such that when the transfer arm receives a wafer that is attracted to the electrostatic chuck, the wafer tray is closed. It is configured to be opened immediately before contacting the wafer and closed immediately after contacting the wafer.
本発明は、半導体製造装置に係わり、特にウェーハの
離脱が容易な静電チャックに関する。The present invention relates to a semiconductor manufacturing apparatus, and more particularly to an electrostatic chuck that facilitates separation of a wafer.
近年、エレクトロニクスの発展は目ざましいものがあ
るが、その発展は、半導体デバイスの技術革新に負うと
ころが大きい。In recent years, the development of electronics has been remarkable, but the development largely depends on technological innovation of semiconductor devices.
中でも、シリコン半導体を用いた集積回路の大規模・
高集積化は非常に急速に推移しており、１チップ内に集
積される素子数は、メモリ素子の容量で見て、数年単位
で４倍に拡大している。Among them, large-scale integrated circuits using silicon semiconductors
The degree of integration has been changing very rapidly, and the number of elements integrated in one chip has been quadrupled every few years in terms of the capacity of memory elements.
それに伴い、シリコンウェーハからデバイスに仕上げ
るまでの一連の工程の中で、いわゆるウェーハプロセス
と呼ばれるパターニングが終了するまでの工程で、ウェ
ーハの取り扱いを如何に効率よく、しかも、安定に行う
かが、生産性向上の上から重要である。Along with this, in a series of steps from the silicon wafer to the finishing of the device, in the process until the so-called wafer process, the patterning is completed, how to handle the wafer efficiently and stably This is important from the viewpoint of improving the performance.
ウェーハプロセスには、一般に、酸化、レジスト処
理、露光、現像、エッチング、不純物導入といった幾つ
かの工程が繰り返されるが、その工程の各所でウェーハ
の保持と搬送が行われる。In the wafer process, generally, several steps such as oxidation, resist treatment, exposure, development, etching, and impurity introduction are repeated, and the wafer is held and transported at various points in the steps.
このウェーハを保持する治具には各種あるが、その１
つに、静電荷のクーロン力を利用した静電チャックがあ
る。There are various types of jigs for holding this wafer.
One is an electrostatic chuck that utilizes the Coulomb force of electrostatic charge.
静電チャックは、真空を用いて吸着する真空チャック
を行うことができない真空装置の中などにおいてウェー
ハ処理を行うときに用いられることが多く、例えば、エ
ッチング工程のRIE（反応性イオンエッチング）処理装
置などに装備されて用いられる。Electrostatic chucks are often used when processing wafers in vacuum equipment that cannot perform vacuum chucking by using a vacuum. For example, RIE (reactive ion etching) processing equipment in the etching process It is used by being equipped with.
第３図は従来の静電チャックが装備された装置の一例
を示す斜視図であり、第４図は第３図の静電チャックの
一例を示す斜視図、第５図は第４図のＸ−Ｘ断面図であ
る。FIG. 3 is a perspective view showing an example of an apparatus equipped with a conventional electrostatic chuck, FIG. 4 is a perspective view showing an example of the electrostatic chuck of FIG. 3, and FIG. It is -X sectional drawing.
図中、１は静電チャック、３は搬送アーム、3aはアー
ム駆動部、3cはウェーハトレイ、５は装置本体、６はウ
ェーハである。In the figure, 1 is an electrostatic chuck, 3 is a transfer arm, 3a is an arm drive unit, 3c is a wafer tray, 5 is an apparatus main body, and 6 is a wafer.
第３図において、装置本体５は例えばドライエッチン
グの一種であるRIE処理装置などの半導体製造装置であ
り、装置本体５の上方は大気の雰囲気で、下方は処理室
5aである。In FIG. 3, an apparatus main body 5 is a semiconductor manufacturing apparatus such as an RIE processing apparatus which is a type of dry etching. The upper part of the apparatus main body 5 is an atmosphere of the atmosphere, and the lower part is a processing chamber.
5a.
装置本体５には、下向きに静電チャック１が取り付け
られており、そこにウェーハ６が吸着されてRIE処理さ
れる。The electrostatic chuck 1 is attached to the apparatus main body 5 in a downward direction, and the wafer 6 is attracted to the electrostatic chuck 1 for RIE processing.
一方、装置本体５の処理室5aには搬送アーム３が内設
されている。この搬送アーム３は、アーム駆動部3aと、
そのアーム駆動部3aに枢支されて旋回したり昇降したり
するアーム本体3bと、そのアーム本体3bの先端に設けら
れたウェーハトレイ3cとから構成されている。On the other hand, the transfer arm 3 is provided inside the processing chamber 5a of the apparatus main body 5. The transfer arm 3 includes an arm driving unit 3a,
The arm body 3b is pivotally supported by the arm drive unit 3a and pivots or moves up and down, and a wafer tray 3c provided at the tip of the arm body 3b.
そして、ウェーハトレイ3cがぐるっと回って静電チャ
ック１の真下にくると上昇して静電チャック１に当接
し、静電チャック１にウェーハ６を渡して吸着させた
り、静電チャック１に吸着されているウェーハ６を受け
取ったりする。When the wafer tray 3c turns around and comes directly below the electrostatic chuck 1, the wafer tray 3c rises and comes into contact with the electrostatic chuck 1, and the wafer 6 is transferred to the electrostatic chuck 1 and sucked, or is sucked by the electrostatic chuck 1. Or the wafer 6 that has been placed.
第４図と第５図において、静電チャック１は、工作機
械の被加工物を吸着するものには方形の形状もあるが、
シリコンウェーハなどを吸着する形式のものでは、円形
の形状が多い。In FIGS. 4 and 5, the electrostatic chuck 1 has a rectangular shape for adsorbing a workpiece of a machine tool.
In the case of a type that sucks a silicon wafer or the like, a circular shape is often used.
静電チャック１の外殻1gはAlなどでできており、中に
は例えばシリコンゴムなどが充填されている。そして、
ウェーハ６を吸着する凸状の表面には、膜厚が100〜300
μｍの絶縁膜1aが被覆されている。The outer shell 1g of the electrostatic chuck 1 is made of Al or the like, and is filled with, for example, silicon rubber or the like. And
The thickness of the film is 100 to 300 on the convex surface for attracting the wafer 6.
The insulating film 1a of μm is covered.
この絶縁膜1aは、例えばプラスチックやゴムのような
耐熱性はないが軟らかい材料とかセラミックのような耐
熱性がある硬い材料とかで構成されている。その絶縁膜
1aを剥いでみると、その下には電極1b、1cが設けられて
いる。The insulating film 1a is made of a soft material having no heat resistance such as plastic or rubber, or a heat-resistant hard material such as ceramic. The insulating film
When peeling 1a, electrodes 1b and 1c are provided below it.
この電極1b、1cのパターン形状は、円を２つに割った
形状であったり、九十九折り形状であったり、吸着させ
る目的などによって種々の形態が採られており、ここで
は、同心円状の櫛歯状パターンの電極1b、1c、が互いに
配置された形状になっている。The patterns of the electrodes 1b and 1c are formed by dividing a circle into two parts, in a 99-fold form, or in various forms depending on the purpose of adsorption. The electrodes 1b and 1c of the comb-shaped pattern are arranged in a mutually arranged manner.
そして、電極1b、1cは、それぞれ端子1d、1eを通して
外殻1gから外に導出されている。そして、それぞれの端
子1d、1eに±数kVの高い直流電圧が印加されると、絶縁
膜1aに静電荷が誘起され、ウェーハ６との間にクーロン
力が作用して吸着が行われる。The electrodes 1b and 1c are led out of the outer shell 1g through the terminals 1d and 1e, respectively. Then, when a high DC voltage of ± several kV is applied to the terminals 1d and 1e, an electrostatic charge is induced in the insulating film 1a, and a Coulomb force acts between the insulating film 1a and the wafer 6 to perform adsorption.
ところが、例えばRIE処理のように、静電チャック１
に吸着されて処理されるウェーハ６が、例えば電子のよ
うな荷電粒子７によって叩かれると、ウェーハ６自体が
セルフバイアスによって電荷を帯びて残留電荷7aとして
残ってしまう。However, for example, as in the RIE process, the electrostatic chuck 1
When the wafer 6 that is adsorbed and processed is hit by charged particles 7 such as electrons, the wafer 6 itself is charged by self-bias and remains as a residual charge 7a.
その結果、静電チャック１の電極1b、1cに印加してい
る直流電圧を断っても、ウェーハ６が静電チャック１か
ら容易に離脱しなくなることが間々起こる。As a result, even when the DC voltage applied to the electrodes 1b and 1c of the electrostatic chuck 1 is cut off, it sometimes happens that the wafer 6 does not easily come off the electrostatic chuck 1.
この対策として、図示してないが、例えばリフトピン
などを用いてウェーハ６を機械的に離脱させようとする
と、ウェーハ６が割れたり、ウェーハ６が静電チャック
１から離脱した瞬間に剥離放電が起こったりして、ウェ
ーハ６が損傷してしまうことが間々起こる。As a countermeasure, although not shown, when the wafer 6 is mechanically detached using, for example, lift pins, a peeling discharge occurs at the moment the wafer 6 is broken or the wafer 6 is detached from the electrostatic chuck 1. In some cases, the wafer 6 is damaged.
以上述べたように、半導体製造装置に内設された静電
チャックに吸着されたウェーハは、そのウェーハの処理
がRIE処理などのときにはウェーハ自体に残留電荷が残
ってしまい。静電チャックから離脱し難い問題があっ
た。As described above, a wafer adsorbed on an electrostatic chuck provided in a semiconductor manufacturing apparatus has residual charges remaining on the wafer itself when the wafer is processed by RIE or the like. There is a problem that it is difficult to separate from the electrostatic chuck.
そうかといって、ウェーハを機械的に離脱させようと
すると、剥離放電が起こったりしてウェーハが損傷して
しまう問題があった。On the other hand, if the wafer is mechanically detached, there is a problem that a peeling discharge occurs and the wafer is damaged.
本発明は、このウェーハの残留電荷を効果的に活用し
たり除電したりして、ウェーハの離脱が容易な静電チャ
ックを有する半導体製造装置を提供することを目的とし
ている。SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor manufacturing apparatus having an electrostatic chuck in which the wafer can be easily detached by effectively utilizing the residual charge of the wafer or eliminating the charge.
上で述べた課題は、 静電チャックと、電源装置とを有し、 前記静電チャックは、ウェーハを吸着するものであっ
て、吸着面に絶縁膜と、絶縁膜の下に交互に配設された
電極と、電極から導出された端子とを有するものであ
り、 前記電源装置は、電極に直流電圧を印加するものであ
って、２つの高圧電源と、端子に接続される出力端子
と、接地端子と、極性切替え手段とを有するものであ
り、 前記極性切替え手段は、一方が接地端子、他方が出力
端子に極性切替え可能に接続されるように、高圧電源の
夫々に設けられるものであり、 前記極性切替え手段は、静電チャックに吸着されてい
るウェーハが離脱される際、ウェーハが有する残留電荷
と同極性の電圧を出力端子を介して電極に印加するもの
であるように構成された半導体製造装置、また、 静電チャックと、搬送アームと、継電器とを有し、 前記静電チャックは、ウェーハを吸着するものであっ
て、装置本体に内設されているものであり、 前記搬送アームは、ウェーハを静電チャックに着脱す
るものであって、装置本体に気密可能に貫通支持された
アーム駆動部と、装置本体に内設され、かつアーム駆動
部に旋回および昇降可能に枢支されたアーム本体と、ア
ーム本体の先端に静電チャックに対面するように設けら
れたウェーハトレイとを有するものであり、 前記ウェーハトレイは、アーム駆動部と電気的に接続
されているものであり、 前記継電器は、装置本体と電気的に絶縁されたアーム
駆動部を接地するものであって、常時閉成されており、 前記継電器は、搬送アームが静電チャックに吸着され
ているウェーハを受け取る際、ウェーハトレイがウェー
ハに当接する直前に開成され、かつ当接した直後に閉成
されるものであるように構成された半導体製造装置によ
って解決される。The above-described problem has an electrostatic chuck and a power supply device, wherein the electrostatic chuck is for adsorbing a wafer, and an insulating film is alternately arranged below the insulating film on the adsorption surface. And a terminal derived from the electrode, wherein the power supply device applies a DC voltage to the electrode, two high-voltage power supplies, and an output terminal connected to the terminal, A ground terminal, and a polarity switching unit, wherein the polarity switching unit is provided in each of the high-voltage power supplies such that one is connected to the ground terminal and the other is connected to the output terminal so that the polarity can be switched. The polarity switching means is configured to apply a voltage having the same polarity as the residual charge of the wafer to the electrode via the output terminal when the wafer that has been attracted to the electrostatic chuck is detached. Semiconductor manufacturing equipment, An electrostatic chuck, a transfer arm, and a relay, wherein the electrostatic chuck is for adsorbing a wafer and is provided inside the apparatus main body; To and from the electrostatic chuck, and an arm drive unit which is penetrated and supported by the apparatus main body so as to be airtight, and an arm body which is provided inside the apparatus main body and is pivotally supported by the arm drive unit so as to be able to pivot and move up and down. And a wafer tray provided at the end of the arm main body so as to face the electrostatic chuck, wherein the wafer tray is electrically connected to an arm driving unit, and the relay is An arm drive unit electrically insulated from the apparatus main body, and is always closed, and the relay receives the wafer on which the transfer arm is attracted by the electrostatic chuck. The problem is solved by a semiconductor manufacturing apparatus configured to be opened immediately before the wafer tray comes into contact with the wafer and closed immediately after the wafer tray comes into contact with the wafer tray.
静電チャックに吸着されたウェーハを、例えばエッチ
ングの一種であるRIE処理のように荷電粒子によって叩
くと、ウェーハ自体が電荷を帯びて静電チャックから離
脱し難くなるのに対して、まず、第一の本発明において
は、ウェーハに溜まったこのような残留電荷を積極的に
利用して、静電チャックから容易にウェーハを離脱させ
るようにしている。If the wafer adsorbed on the electrostatic chuck is hit with charged particles as in the case of RIE processing, which is a type of etching, for example, the wafer itself becomes charged and becomes difficult to separate from the electrostatic chuck. In one aspect of the present invention, the wafer is easily detached from the electrostatic chuck by positively utilizing such residual charges accumulated on the wafer.
すなわち、ウェーハの残留電荷の極性と同極性の電圧
を静電チャックの電極に印加し、同極性同士の電荷によ
るクーロン斥力によってウェーハを静電チャックから離
脱させるようにしている。That is, a voltage having the same polarity as the polarity of the residual charge of the wafer is applied to the electrode of the electrostatic chuck, and the wafer is detached from the electrostatic chuck by Coulomb repulsion due to charges of the same polarity.
そのため、２つの高圧電源を具えた直流の電源装置の
それぞれの高圧電源に極性切替え手段を設け、ウェーハ
を静電チャックに吸着する際には、２つの電極に正負の
電圧を印加し、ウェーハを静電チャックから離脱させる
際には、２つの電極にウェーハの残留電荷と同極性の電
圧を印加するようにしている。Therefore, a polarity switching means is provided for each high-voltage power supply of a DC power supply device having two high-voltage power supplies, and when the wafer is attracted to the electrostatic chuck, positive and negative voltages are applied to the two electrodes, and the wafer is moved. When detaching from the electrostatic chuck, a voltage having the same polarity as the residual charge of the wafer is applied to the two electrodes.
こうして、クーロン斥力を利用すれば、荷電されたウ
ェーハを容易に静電チャックから離脱させることができ
る。Thus, the charged wafer can be easily detached from the electrostatic chuck by utilizing the Coulomb repulsion.
次いで、第二の本発明においては、ウェーハに溜まっ
た残留電荷を、静電チャックにウェーハを着脱させる搬
送アームのウェーハトレイに放電することなく漏洩させ
るようにしている。Next, in the second aspect of the present invention, the residual charges accumulated on the wafer are leaked without discharging to the wafer tray of the transfer arm for attaching and detaching the wafer to and from the electrostatic chuck.
すなわち、搬送アームを装置本体から電気的に絶縁
し、しかもアーム駆動部とアーム本体、ウェーハトレイ
からなる搬送アーム全体を導通するようにしている。そ
して、装置本体から外に露出しているアーム駆動部を継
電器を介して常時接地できるようにしている。That is, the transfer arm is electrically insulated from the apparatus main body, and furthermore, the entire arm including the arm drive section, the arm body and the wafer tray is electrically connected. Further, the arm driving portion exposed outside from the apparatus main body can be always grounded via a relay.
一方、ウェーハトレイは、106から108Ωcm程度の体積
比抵抗を有する材料を用いて、ウェーハの残留電荷との
間に放電が起こるような急激な電位差が生じないように
している。こゝではその材料としてSiC（シリコンカー
バイド）を用いるようにしている。On the other hand, the wafer tray is made of a material having a volume resistivity of about 10 6 to 10 8 Ωcm so as to prevent a sharp potential difference from being generated between the wafer tray and the residual charge. Here, SiC (silicon carbide) is used as the material.
ウェーハの離脱動作に際しては、搬送アームが静電チ
ャックからウェーハを離脱させるために旋回・上昇し
て、ウェーハトレイがウェーハに当接する直前に、継電
器を開成して搬送アーム全体を接地から浮かせるように
している。そして、ウェーハトレイがウェーハに当接し
た直後に継電器を閉成して、ウェーハの残留電荷を比較
的体積比抵抗の低いSiC製のウェーハトレイから徐々に
漏洩させるようにしている。During the wafer removal operation, the transfer arm pivots and moves up to separate the wafer from the electrostatic chuck, and just before the wafer tray contacts the wafer, a relay is opened to lift the entire transfer arm from ground. ing. Then, the relay is closed immediately after the wafer tray comes into contact with the wafer, so that the residual charge of the wafer is gradually leaked from the SiC wafer tray having a relatively low volume resistivity.
こうすると、放電によるウェーハの損傷を防ぐことが
できる。This can prevent the wafer from being damaged by the discharge.
このように、本発明においては、静電チャックに吸着
されながら処理されて残留電荷を有するウェーハに対し
て、その残留電荷のクーロン斥力を利用するとか、ある
いはウェーハと当接するウェーハトレイの体積比抵抗を
比較的高くするとともに、搬送アームを接地と断続して
残留電荷を徐々に漏洩させるとかして、静電チャックの
離脱に関わるウェーハの損傷を防いでいる。As described above, in the present invention, for a wafer having residual charges processed while being attracted to the electrostatic chuck, the Coulomb repulsion of the residual charges is used, or the volume resistivity of a wafer tray in contact with the wafer is used. Is relatively high, and the transfer arm is intermittently connected to the ground to gradually leak residual charges, thereby preventing damage to the wafer due to detachment of the electrostatic chuck.
第１図は本発明の一実施例を説明する構成図、第２図
は本発明の他の実施例を説明する斜視図である。FIG. 1 is a block diagram illustrating an embodiment of the present invention, and FIG. 2 is a perspective view illustrating another embodiment of the present invention.
図中、１は静電チャック、２は電源装置、３は搬送ア
ーム、４は継電器、５は装置本体、６はウェーハであ
る。In the figure, 1 is an electrostatic chuck, 2 is a power supply device, 3 is a transfer arm, 4 is a relay, 5 is an apparatus main body, and 6 is a wafer.
実施例:1 第１図において、静電チャック１の主要部は、ウェー
ハ６の吸着面である絶縁膜1aと、その下に埋め込まれた
電1b、1cとから構成されており、絶縁膜1aの直径は、吸
着するウェーハ６の直径より１周り小さくなっている。Example 1 In FIG. 1, the main part of the electrostatic chuck 1 is composed of an insulating film 1a which is a suction surface of a wafer 6, and electrodes 1b and 1c embedded under the insulating film 1a. Is about one smaller than the diameter of the wafer 6 to be sucked.
絶縁膜1aは、例えば膜厚が100〜300μｍの絶縁性の高
い材料からなり、例えばシリコンゴムのような軟らかい
材料とかアルミナセラミックのような硬い材料など用い
られ、目的に応じて使い分けられている。The insulating film 1a is made of a material having a high insulating property, for example, having a thickness of 100 to 300 μm. For example, a soft material such as silicon rubber or a hard material such as alumina ceramic is used, and is properly used depending on the purpose.
電極1b、1cには、種々のパターン形状があるが、こゝ
こでは、同心円状の櫛歯状パターンの電極1b、1cが用い
られており、それぞれの電極1b、1cから端子1d、1eが出
ていて、直流の高電圧が印加できるようになっている。Although the electrodes 1b and 1c have various pattern shapes, here, electrodes 1b and 1c having a concentric comb-tooth pattern are used, and the terminals 1d and 1e are respectively connected to the electrodes 1b and 1c. So that a high DC voltage can be applied.
一方、電源装置２は、例えば2kVの直流電圧を出力す
る２つの高圧電源2a、2bと、端子1d、1eにそれぞれ接続
されている２つの出力端子2c、2dと、２つずつのベクセ
ル接点をもったスイッチからなる極性切替え手段2f、2g
と、接点端子2eとから構成されている。On the other hand, the power supply device 2 includes, for example, two high-voltage power supplies 2a and 2b that output a DC voltage of 2 kV, two output terminals 2c and 2d respectively connected to the terminals 1d and 1e, and two Vexel contacts. Polarity switching means 2f, 2g consisting of switches with
And a contact terminal 2e.
そして、極性切替え手段2f、2gが、それぞれの高圧電
源2a、2bの正極／負極を、出力端子2c、2dと接地端子2e
との間で切り替え、静電チャック１にウェーハ６を吸着
する際には、例えば電極1bが正で電極1cが負になるよう
に電圧が印加される。The polarity switching means 2f and 2g connect the positive / negative poles of the high voltage power supplies 2a and 2b to the output terminals 2c and 2d and the ground terminal 2e.
When attracting the wafer 6 to the electrostatic chuck 1, a voltage is applied so that, for example, the electrode 1b is positive and the electrode 1c is negative.
ウェーハ６がRIE処理される場合を例にすると、ウェ
ーハ６は荷電粒子７である電子のシャワを浴びて負に荷
電され、負の残留電荷7aがウェーハ６の表面に溜まる。
そこで、極性切替え手段2f、2gを切り換えて、図示した
ように２つの電極1b、1cに負の電圧を印加する。Taking the case where the wafer 6 is subjected to the RIE process as an example, the wafer 6 is negatively charged by showering of electrons as charged particles 7, and negative residual charges 7 a accumulate on the surface of the wafer 6.
Therefore, the polarity switching means 2f and 2g are switched to apply a negative voltage to the two electrodes 1b and 1c as shown.
この極性切替え手段2f、2gのスイッチの切替えは、図
示してない制御系によって自動的に制御されるようにな
っている。The switching of the switches of the polarity switching means 2f, 2g is automatically controlled by a control system (not shown).
こうして、静電チャック１の絶縁膜1aに誘起された負
の電荷1fとウェーハ６の残留電荷7aとでクーロン斥力が
働いて反発し合うので、ウェーハ６が容易に離脱する。Thus, the negative charge 1f induced in the insulating film 1a of the electrostatic chuck 1 and the residual charge 7a of the wafer 6 repel each other due to the Coulomb repulsion, so that the wafer 6 is easily separated.
実施例:2 第２図において、搬送アーム３は、アーム駆動部3a
と、アーム駆動部3aに枢支されて旋回したり上下動した
りするアーム本体3bと、アーム本体3bの先端に支持され
て、静電チャック１の真下でウェーハ６を静電チャック
１に着脱させるウェーハトレイ3cとから構成されてい
る。Embodiment 2 In FIG. 2, the transfer arm 3 is provided with an arm driving unit 3a.
An arm main body 3b pivotally supported by an arm driving section 3a to pivot or move up and down; a wafer 6 supported by the tip of the arm main body 3b to attach / detach the wafer 6 to / from the electrostatic chuck 1 directly below the electrostatic chuck 1 And a wafer tray 3c.
そして、搬送アーム３は、例えばAl製で全体が導通さ
れており、ウェーハトレイ3cは、比較的体積比抵抗の低
いSiC製である。The entire transfer arm 3 is made of, for example, Al and is electrically conductive, and the wafer tray 3c is made of SiC having a relatively low volume resistivity.
装置本体５は、例えばRIEを行う処理室5aの上壁であ
る。そして、アーム駆動部3aは、例えばふっ素系樹脂で
作ったガスケット5bを介在させて気密を保つとともに、
装置本体５と電気的に絶縁されるように貫通支持されて
いる。そして、アーム駆動部3aの上部は、大気中に突出
しており、常時閉成している継電器４を介して接地でき
るようになっている。The apparatus main body 5 is, for example, an upper wall of a processing chamber 5a for performing RIE. The arm drive unit 3a maintains airtightness by interposing a gasket 5b made of, for example, a fluororesin,
It is penetrated and supported so as to be electrically insulated from the apparatus main body 5. The upper portion of the arm driving section 3a protrudes into the atmosphere, and can be grounded via the relay 4, which is normally closed.
アーム本体3bやウェーハトレイ3cなどは装置本体５の
中に配設されている。The arm body 3b, the wafer tray 3c, and the like are disposed in the apparatus body 5.
実施例１と同様に負の残留電荷7aを有するウェーハ６
に対して、搬送アーム３を駆動してウェーハトレイ3cを
接近させ、ウェーハトレイ3cがウェーハ６に当接する１
秒前に継電器４を開成して搬送アーム３全体を接地から
浮かす。そして、ウェーハトレイ3cがウェーハ６に当接
した0.2秒後に高電圧を切断するとともに、継電器４を
閉成して搬送アーム３全体を接地する。Wafer 6 having negative residual charge 7a as in the first embodiment
In response to this, the transfer arm 3 is driven to make the wafer tray 3c approach, and the wafer tray 3c is brought into contact with the wafer 6.
A second before, the relay 4 is opened to lift the entire transfer arm 3 from the ground. Then, 0.2 seconds after the wafer tray 3c contacts the wafer 6, the high voltage is cut off, the relay 4 is closed, and the entire transfer arm 3 is grounded.
その結果、約１秒後にはウェーハ６の残留電荷6aが除
電され、ウェーハ６に損傷を与える放電は全く見られな
い。As a result, after about one second, the residual charge 6a of the wafer 6 is eliminated, and no discharge that damages the wafer 6 is observed.
こゝでは、RIE処理室を例としたり、静電チャックに
同心円状の櫛歯状パターンの電極を用いたりしたが、種
々の変形が可能である。Here, the RIE processing chamber is used as an example, or concentric comb-shaped electrodes are used for the electrostatic chuck, but various modifications are possible.
また、継電器を開閉や除電のタイミングなどは、例え
ばウェーハに溜まる残留電荷の量とかウェーハトレイや
搬送アームの対接地インピーダンスなどとかによって、
種々の変形が可能である。Also, the timing of opening and closing the relay and the timing of static elimination, for example, depends on the amount of residual charge accumulated on the wafer, the impedance of the wafer tray and the transfer arm to ground, etc.
Various modifications are possible.
以上述べたように、静電チャックに吸着されたウェー
ハが例えばRIE処理のような荷電粒子によって叩かれて
電荷を帯びて残留電荷が溜まり、静電チャックから離脱
し難くなったウェーハに対して、本発明においては、ま
ず、静電チャックにこの電荷と同極性の電圧を印加し
て、クーロン斥力によって離脱し易くしている。As described above, the wafer adsorbed on the electrostatic chuck is charged by the charged particles such as the RIE process, is charged, and the remaining charge is accumulated. In the present invention, first, a voltage having the same polarity as the electric charge is applied to the electrostatic chuck, so that the electrostatic chuck is easily detached by Coulomb repulsion.
さらに、ウェーハを静電チャックに着脱させる搬送ア
ーム全体を装置本体から絶縁して継電器を介して接地で
きるようにするとともに、ウェーハトレイを比較的体積
比抵抗の低いSiC製にし、継電器の接地タイミングを制
御して、ウェーハに溜まった残留電荷を放電が起こらな
いように徐々に除電していく。In addition, the entire transfer arm that attaches and detaches the wafer to and from the electrostatic chuck is insulated from the main body of the device so that it can be grounded via a relay.The wafer tray is made of SiC, which has a relatively low volume resistivity, and the grounding timing of the relay is adjusted. Under control, the residual charges accumulated on the wafer are gradually eliminated so that no discharge occurs.
こうして、例えば機械的に離脱してウェーハが破損し
たり、ウェーハトレイとの間で放電してウェーハが損傷
したりする従来の障害を防ぐことができる。In this way, it is possible to prevent the conventional trouble that the wafer is broken due to mechanical detachment or the wafer is damaged by discharging between the wafer tray.
従って、本発明は、半導体製造工程における歩留り向
上に寄与するところが大である。Therefore, the present invention largely contributes to the improvement of the yield in the semiconductor manufacturing process.
第１図は本発明の一実施例を説明する構成図、 第２図は本発明の他の実施例を説明する斜視図、 第３図は従来の静電チャックが装備された装置の一例を
示す斜視図、 第４図は第３図の静電チャックの一例を示す斜視図、 第５図は第４図のＸ−Ｘ断面図、 である。 図において、 １は静電チャック、1aは絶縁膜、 1b、1cは電極、1d、1eは端子、 ２は電源装置、2a、2bは高圧電源、 2c、2dは出力端子、2eは接地端子、 2f、2gは極性切替え手段、 ３は搬送アーム、3aはアーム駆動部、 3bはアーム本体、3cはウェーハトレイ、 ４は継電器、５は装置本体、 ６はウェーハ、 である。FIG. 1 is a configuration diagram illustrating an embodiment of the present invention, FIG. 2 is a perspective view illustrating another embodiment of the present invention, and FIG. 3 is an example of an apparatus equipped with a conventional electrostatic chuck. FIG. 4 is a perspective view showing an example of the electrostatic chuck shown in FIG. 3, and FIG. 5 is a sectional view taken along line XX of FIG. In the figure, 1 is an electrostatic chuck, 1a is an insulating film, 1b and 1c are electrodes, 1d and 1e are terminals, 2 is a power supply, 2a and 2b are high voltage power supplies, 2c and 2d are output terminals, 2e is a ground terminal, 2f and 2g are polarity switching means, 3 is a transfer arm, 3a is an arm drive unit, 3b is an arm body, 3c is a wafer tray, 4 is a relay, 5 is an apparatus body, and 6 is a wafer.
Claims (2)
を有し、 前記静電チャック（１）は、ウェーハ（６）を吸着する
ものであって、吸着面に絶縁膜（1a）と、該絶縁膜（1
a）の下に交互に配設された電極（1b、1c）と、該電極
（1b、1c）から導出された端子（1d、1e）とを有するも
のであり、 前記電源装置（２）は、前記電極（1b、1c）に直流電圧
を印加するものであって、２つの高圧電源（2a、2b）
と、前記端子（1d、1e）に接続される出力端子（2c、2
d）と、接地端子（2e）と、極性切替え手段（2f、2g）
とを有するものであり、 前記極性切替え手段（2f、2g）は、一方が前記接地端子
（2e）、他方が前記出力端子（2c、2d）に極性切替え可
能に接続されるように、前記高圧電源（2a、2b）の夫々
に設けられるものであり、 前記極性切替え手段（2f、2g）は、前記静電チャック
（１）に吸着されている前記ウェーハ（６）が離脱され
る際、該ウェーハ（６）が有する残留電荷と同極性の電
圧を出力端子（2c、2d）を介して前記電極（1b、1c）に
印加するものである ことを特徴とする半導体製造装置。An electrostatic chuck (1) and a power supply (2) are provided. The electrostatic chuck (1) is for chucking a wafer (6), and has an insulating film ( 1a) and the insulating film (1a).
a) having electrodes (1b, 1c) alternately arranged underneath, and terminals (1d, 1e) derived from the electrodes (1b, 1c); A DC voltage is applied to the electrodes (1b, 1c), and two high-voltage power supplies (2a, 2b)
And output terminals (2c, 2c) connected to the terminals (1d, 1e).
d), ground terminal (2e), and polarity switching means (2f, 2g)
The polarity switching means (2f, 2g) includes: The polarity switching means (2f, 2g) is provided for each of the power supplies (2a, 2b), and the polarity switching means (2f, 2g) is provided when the wafer (6) adsorbed on the electrostatic chuck (1) is detached. A semiconductor manufacturing apparatus, wherein a voltage having the same polarity as the residual charge of the wafer (6) is applied to the electrodes (1b, 1c) via output terminals (2c, 2d).
と、継電器（４）とを有し、 前記静電チャック（１）は、ウェーハ（６）を吸着する
ものであって、装置本体（５）に内設されているもので
あり、 前記搬送アーム（３）は、ウェーハ（６）を前記静電チ
ャック（１）に着脱するものであって、前記装置本体
（５）に気密可能に貫通支持されたアーム駆動部（3a）
と、該装置本体（５）に内設され、かつ該アーム駆動部
（3a）に旋回および昇降可能に枢支されたアーム本体
（3b）と、該アーム本体（3b）の先端に前記静電チャッ
ク（１）に対面するように設けられたウェーハトレイ
（3c）とを有するものであり、 前記ウェーハトレイ（3c）は、前記アーム駆動部（3a）
と電気的に接続されているものであり、 前記継電器（４）は、前記装置本体（５）と電気的に絶
縁された前記アーム駆動部（3a）を接地するものであっ
て、常時閉成されており、 前記継電器（４）は、前記搬送アーム（３）が前記静電
チャック（１）に吸着されている前記ウェーハ（６）を
受け取る際、前記ウェーハトレイ（3c）が該ウェーハ
（６）に当接する直前に開成され、かつ当接した直後に
閉成されるものである ことを特徴とする半導体製造装置。2. An electrostatic chuck (1) and a transfer arm (3).
And a relay (4), wherein the electrostatic chuck (1) is for adsorbing the wafer (6), and is provided inside the apparatus main body (5); (3) An arm drive unit (3a) for attaching and detaching the wafer (6) to and from the electrostatic chuck (1), wherein the arm drive unit (3a) is air-tightly supported by the apparatus main body (5).
An arm body (3b) provided in the apparatus body (5) and pivotally supported by the arm drive section (3a) so as to be pivotable and able to move up and down; A wafer tray (3c) provided so as to face the chuck (1), wherein the wafer tray (3c) is provided with the arm driving section (3a).
The relay (4) is for grounding the arm drive unit (3a) electrically insulated from the device body (5), and is normally closed. When the transfer arm (3) receives the wafer (6) sucked by the electrostatic chuck (1), the relay (4) moves the wafer tray (3c) to the wafer (6). The semiconductor manufacturing apparatus is opened immediately before contact with the semiconductor device, and closed immediately after contact with the semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007572A JP2867526B2 (en) | 1990-01-16 | 1990-01-16 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007572A JP2867526B2 (en) | 1990-01-16 | 1990-01-16 | Semiconductor manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03211753A JPH03211753A (en) | 1991-09-17 |
| JP2867526B2 true JP2867526B2 (en) | 1999-03-08 |
Family
ID=11669526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007572A Expired - Fee Related JP2867526B2 (en) | 1990-01-16 | 1990-01-16 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2867526B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160111338A (en) * | 2015-03-16 | 2016-09-26 | 가부시기가이샤 디스코 | Reduced-pressure processing apparatus |
Families Citing this family (215)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5325261A (en) * | 1991-05-17 | 1994-06-28 | Unisearch Limited | Electrostatic chuck with improved release |
| US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
| US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
| US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
| US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
| JP2016171291A (en) * | 2015-03-16 | 2016-09-23 | 株式会社ディスコ | Decompression processing apparatus |
| US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
| US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
| US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
| US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
| US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
| JP6697346B2 (en) * | 2016-07-20 | 2020-05-20 | 株式会社ディスコ | Adsorption confirmation method, desorption confirmation method, and decompression treatment device |
| US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
| US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| KR102546317B1 (en) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
| KR20180068582A (en) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
| US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
| JP6964992B2 (en) | 2017-02-20 | 2021-11-10 | キヤノン株式会社 | Image forming device |
| US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
| US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
| US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| KR20190009245A (en) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a semiconductor device structure and related semiconductor device structures |
| US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
| US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
| US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
| US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
| WO2019103610A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
| JP7214724B2 (en) | 2017-11-27 | 2023-01-30 | エーエスエム アイピー ホールディング ビー．ブイ． | Storage device for storing wafer cassettes used in batch furnaces |
| US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| CN111630203A (en) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | Method for depositing gap filling layer by plasma auxiliary deposition |
| TWI799494B (en) | 2018-01-19 | 2023-04-21 | 荷蘭商Ａｓｍ 智慧財產控股公司 | Deposition method |
| US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| JP7124098B2 (en) | 2018-02-14 | 2022-08-23 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
| US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
| CN108470851B (en) * | 2018-03-26 | 2020-03-06 | 京东方科技集团股份有限公司 | Substrate processing method and substrate processing apparatus |
| KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
| US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
| TWI843623B (en) | 2018-05-08 | 2024-05-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
| KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| TWI840362B (en) | 2018-06-04 | 2024-05-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Wafer handling chamber with moisture reduction |
| US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
| US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
| WO2020003000A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| TW202409324A (en) | 2018-06-27 | 2024-03-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Cyclic deposition processes for forming metal-containing material |
| US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
| US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102707956B1 (en) | 2018-09-11 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
| TWI844567B (en) | 2018-10-01 | 2024-06-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Substrate retaining apparatus, system including the apparatus, and method of using same |
| US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
| KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
| KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| KR20200051105A (en) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| JP7504584B2 (en) | 2018-12-14 | 2024-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method and system for forming device structures using selective deposition of gallium nitride - Patents.com |
| TWI819180B (en) | 2019-01-17 | 2023-10-21 | 荷蘭商Ａｓｍ 智慧財產控股公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
| KR20200091543A (en) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
| TWI845607B (en) | 2019-02-20 | 2024-06-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
| KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
| KR20200102357A (en) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for plug fill deposition in 3-d nand applications |
| JP2020136678A (en) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method for filing concave part formed inside front surface of base material, and device |
| TWI842826B (en) | 2019-02-22 | 2024-05-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Substrate processing apparatus and method for processing substrate |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| KR20200108242A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
| KR20200116033A (en) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | Door opener and substrate processing apparatus provided therewith |
| KR20200116855A (en) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
| KR20200123380A (en) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | Layer forming method and apparatus |
| KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
| KR20200130118A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for Reforming Amorphous Carbon Polymer Film |
| KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
| KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
| JP2020188254A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー．ブイ． | Wafer boat handling device, vertical batch furnace, and method |
| JP2020188255A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー．ブイ． | Wafer boat handling device, vertical batch furnace, and method |
| USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| KR20200141003A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system including a gas detector |
| KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
| USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
| KR20210005515A (en) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
| JP7499079B2 (en) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | Plasma device using coaxial waveguide and substrate processing method |
| CN112216646A (en) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | Substrate supporting assembly and substrate processing device comprising same |
| KR20210010307A (en) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| KR20210010820A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
| KR20210010816A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| TWI839544B (en) | 2019-07-19 | 2024-04-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method of forming topology-controlled amorphous carbon polymer film |
| KR20210010817A (en) | 2019-07-19 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Method of Forming Topology-Controlled Amorphous Carbon Polymer Film |
| CN112309843A (en) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | Selective deposition method for achieving high dopant doping |
| CN112309899A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
| CN112309900A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| CN118422165A (en) | 2019-08-05 | 2024-08-02 | Asm Ip私人控股有限公司 | Liquid level sensor for chemical source container |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| JP2021031769A (en) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー．ブイ． | Production apparatus of mixed gas of film deposition raw material and film deposition apparatus |
| USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
| USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
| KR20210024423A (en) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for forming a structure with a hole |
| USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
| KR20210024420A (en) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| KR20210029090A (en) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selective deposition using a sacrificial capping layer |
| KR20210029663A (en) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| CN112593212B (en) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process |
| TWI846953B (en) | 2019-10-08 | 2024-07-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Substrate processing device |
| KR20210042810A (en) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | Reactor system including a gas distribution assembly for use with activated species and method of using same |
| KR20210043460A (en) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming a photoresist underlayer and structure including same |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| TWI834919B (en) | 2019-10-16 | 2024-03-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method of topology-selective film formation of silicon oxide |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| KR20210047808A (en) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
| KR20210050453A (en) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| KR20210054983A (en) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| KR20210062561A (en) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
| KR20210065848A (en) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selectivley forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| CN112951697A (en) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
| CN112885693A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
| CN112885692A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
| JP7527928B2 (en) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | Substrate processing apparatus and substrate processing method |
| KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| TW202125596A (en) | 2019-12-17 | 2021-07-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
| US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| KR20210089079A (en) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | Channeled lift pin |
| TW202140135A (en) | 2020-01-06 | 2021-11-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Gas supply assembly and valve plate assembly |
| US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| KR102675856B1 (en) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
| TW202130846A (en) | 2020-02-03 | 2021-08-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method of forming structures including a vanadium or indium layer |
| TW202146882A (en) | 2020-02-04 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method of verifying an article, apparatus for verifying an article, and system for verifying a reaction chamber |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
| TW202203344A (en) | 2020-02-28 | 2022-01-16 | 荷蘭商Ａｓｍ Ｉｐ控股公司 | System dedicated for parts cleaning |
| KR20210116249A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | lockout tagout assembly and system and method of using same |
| KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
| CN113394086A (en) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | Method for producing a layer structure having a target topological profile |
| KR20210124042A (en) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | Thin film forming method |
| TW202146689A (en) | 2020-04-03 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ控股公司 | Method for forming barrier layer and method for manufacturing semiconductor device |
| TW202145344A (en) | 2020-04-08 | 2021-12-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Apparatus and methods for selectively etching silcon oxide films |
| KR20210127620A (en) | 2020-04-13 | 2021-10-22 | 에이에스엠 아이피 홀딩 비.브이. | method of forming a nitrogen-containing carbon film and system for performing the method |
| KR20210128343A (en) | 2020-04-15 | 2021-10-26 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming chromium nitride layer and structure including the chromium nitride layer |
| US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
| US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
| TW202146831A (en) | 2020-04-24 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Vertical batch furnace assembly, and method for cooling vertical batch furnace |
| JP2021172884A (en) | 2020-04-24 | 2021-11-01 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method of forming vanadium nitride-containing layer and structure comprising vanadium nitride-containing layer |
| KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
| KR20210134226A (en) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | Solid source precursor vessel |
| KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
| KR20210141379A (en) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Laser alignment fixture for a reactor system |
| TW202146699A (en) | 2020-05-15 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method of forming a silicon germanium layer, semiconductor structure, semiconductor device, method of forming a deposition layer, and deposition system |
| KR20210143653A (en) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| KR20210145078A (en) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Structures including multiple carbon layers and methods of forming and using same |
| KR102702526B1 (en) | 2020-05-22 | 2024-09-03 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus for depositing thin films using hydrogen peroxide |
| TW202201602A (en) | 2020-05-29 | 2022-01-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Substrate processing device |
| TW202212620A (en) | 2020-06-02 | 2022-04-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Apparatus for processing substrate, method of forming film, and method of controlling apparatus for processing substrate |
| TW202218133A (en) | 2020-06-24 | 2022-05-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method for forming a layer provided with silicon |
| TW202217953A (en) | 2020-06-30 | 2022-05-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Substrate processing method |
| KR102707957B1 (en) | 2020-07-08 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | Method for processing a substrate |
| TW202219628A (en) | 2020-07-17 | 2022-05-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Structures and methods for use in photolithography |
| TW202204662A (en) | 2020-07-20 | 2022-02-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method and system for depositing molybdenum layers |
| US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
| KR20220027026A (en) | 2020-08-26 | 2022-03-07 | 에이에스엠 아이피 홀딩 비.브이. | Method and system for forming metal silicon oxide and metal silicon oxynitride |
| TW202229601A (en) | 2020-08-27 | 2022-08-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method of forming patterned structures, method of manipulating mechanical property, device structure, and substrate processing system |
| USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
| USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
| CN111933564B (en) * | 2020-09-27 | 2021-01-05 | 北京京仪自动化装备技术有限公司 | Conveying manipulator |
| US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
| KR20220045900A (en) | 2020-10-06 | 2022-04-13 | 에이에스엠 아이피 홀딩 비.브이. | Deposition method and an apparatus for depositing a silicon-containing material |
| CN114293174A (en) | 2020-10-07 | 2022-04-08 | Asm Ip私人控股有限公司 | Gas supply unit and substrate processing apparatus including the same |
| TW202229613A (en) | 2020-10-14 | 2022-08-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method of depositing material on stepped structure |
| KR20220053482A (en) | 2020-10-22 | 2022-04-29 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing vanadium metal, structure, device and a deposition assembly |
| TW202223136A (en) | 2020-10-28 | 2022-06-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method for forming layer on substrate, and semiconductor processing system |
| TW202235649A (en) | 2020-11-24 | 2022-09-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Methods for filling a gap and related systems and devices |
| TW202235675A (en) | 2020-11-30 | 2022-09-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Injector, and substrate processing apparatus |
| US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
| TW202231903A (en) | 2020-12-22 | 2022-08-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate |
| USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
| USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
| USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
| USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
| US12062565B2 (en) | 2021-06-29 | 2024-08-13 | Asm Ip Holding B.V. | Electrostatic chuck, assembly including the electrostatic chuck, and method of controlling temperature of the electrostatic chuck |
| USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
-
1990
- 1990-01-16 JP JP2007572A patent/JP2867526B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160111338A (en) * | 2015-03-16 | 2016-09-26 | 가부시기가이샤 디스코 | Reduced-pressure processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03211753A (en) | 1991-09-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2867526B2 (en) | Semiconductor manufacturing equipment | |
| KR100378187B1 (en) | A wafer stage including electro-static chuck and method for dechucking wafer using the same | |
| JP3064409B2 (en) | Holding device and semiconductor manufacturing apparatus using the same | |
| KR980012817A (en) | Apparatus and method for withdrawing a product from an electrostatic chuck | |
| KR19980024679A (en) | Electrostatic chuck and sample processing method and apparatus using the same | |
| JP2004531883A (en) | Semiconductor wafer lifting device and mounting method thereof | |
| JPWO2006049085A1 (en) | Electrostatic chuck device | |
| JP3230821B2 (en) | Electrostatic chuck with pusher pin | |
| TW201816880A (en) | Substrate processing method and substrate processing device | |
| JP3191139B2 (en) | Sample holding device | |
| JPH077072A (en) | Method and mechanism for unloading substrate in electrostatic chuck device | |
| US12080582B2 (en) | Etching apparatus and methods of cleaning thereof | |
| JPH01112745A (en) | Wafer separating method in semiconductor manufacturing device | |
| JPH06244147A (en) | Plasma treating device | |
| JP2503364B2 (en) | Wafer electrostatic chucking device, wafer electrostatic chucking method, wafer separating method, and dry etching method | |
| JPH05291384A (en) | Electrostatic attraction method | |
| JPH0513556A (en) | Electrostatic chuck | |
| KR20030020072A (en) | Unipolar electro-static chuck | |
| JPH11243137A (en) | Electrostatic chuck | |
| JPH04117188A (en) | Electrostatic attracting device and separating method for substrate | |
| KR20100001609A (en) | Wafer chucking and dechucking apparatus | |
| JP2004158789A (en) | Method and device for manufacturing semiconductor device | |
| US20240355663A1 (en) | Etching apparatus and methods of cleaning thereof | |
| JPH0722497A (en) | Semiconductor manufacturing equipment | |
| JPS58102537A (en) | Electrostatic attracting type chucking system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |