JPH0722497A - Semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To rapidly remove the charges accumulated on a wafer and easily release the wafer without making scratches on the wafer by covering at least the surface of a releasing knock pin for releasing the wafer from an electrostatic chuck with conductive ceramics. CONSTITUTION:At least the surface of the releasing knock pin 28a which releases a wafer S from an electrostatic chuck 24 which is integrated into a semiconductor manufacturing equipment 10 is covered with conductive ceramics. For example, a plurality of releasing knock pins 28a formed of conductive ceramics which contains TiO2 by 70% with SiO2 as binder are provided. In case of releasing the wafer S from the electrostatic chuck 24 after dry-etching the wafer S, a DC power source 25 is turned off, the releasing knock pins 28a are permitted to abut on the wafer S and the charges accumulated on the wafer S are removed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus,
More specifically, the present invention relates to a semiconductor manufacturing apparatus that includes an electrostatic chuck that attracts a wafer by using static electricity and that performs CVD, etching, and the like.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor manufacturing apparatus used in a thin film forming process or a dry etching process in a semiconductor manufacturing process, it is desired that a wafer be securely brought into close contact with a sample table and controlled at a predetermined temperature. The peripheral portion of the wafer is pressed against the sample table by using a ring-shaped pressing plate, a claw-shaped pressing jig provided on the mounting surface, or the like. But,
In these methods, the degree of adhesion between the wafer and the sample table is insufficient. Therefore, in recent years, in order to solve such a problem, an electrostatic chuck has been developed as a sample holding device utilizing an adsorption action by an electrostatic force, and a semiconductor manufacturing device in which the electrostatic chuck is incorporated has become widespread.

FIG. 5 is a schematic sectional view showing a semiconductor manufacturing apparatus in which an electrostatic chuck of this kind is incorporated. Reference numeral 30 in the figure denotes a semiconductor manufacturing apparatus. An upper electrode 12 having a gas introduction hole (not shown) is disposed in the center of the processing chamber 11, and an RF power source 15 is connected to the upper electrode 12. Has been done. The upper electrode 12 is an upper electrode holding portion 14 of the processing chamber 11 via an insulating ring 13 made of ceramic such as alumina.
It is fixed to. Further, a loading hole 16 and a unloading hole 17 for the wafer S are formed on both side walls 11b of the processing chamber 11, and are sealed by using closing devices 16a and 17a, respectively. An exhaust pipe 18 connected to a vacuum pump (not shown) is connected to the lower wall 11c of the processing chamber 11, and an insulating ring 19 is arranged on the side of the lower wall 11c. A lower electrode 7 made of aluminum is placed on the insulating ring 19.
0 is provided, and RF is applied to the lower electrode 70 via a conductor 71.
A power source 72 is connected, an electrostatic chuck 54 is disposed on the lower electrode 70 so as to face the upper electrode 12, and the wafer S is placed on the electrostatic chuck 54. The electrostatic chuck 54 is configured by forming a conductor layer 54b inside an insulator 54a, and the conductor layer 54b is connected to a DC power supply 75 via a conductor wire 73a and a switch 73. Further, an insulating cylinder 70a is interposed in a portion of the lower electrode 70 where the conducting wire 73a penetrates. Further, a flow path 76 is formed in the electrostatic chuck 54, and an introduction pipe 76a and a discharge pipe 76b are connected to the flow passage 76, and the cooling liquid circulates through the flow passage 76 from the introduction pipe 76a and the discharge pipe. The electrostatic chuck 54 is cooled by being discharged from 76b. Further, the electrostatic chuck 54 and the lower electrode 70 are the lower electrode pressing ring 2
It is fixed to the insulating ring 19 by means of 9. And
By supplying a high-frequency power to the upper electrode 12 and the lower electrode 70 by turning on the RF power sources 15 and 72 by circulating a cooling liquid in the flow path 76 to set the wafer S to a predetermined temperature, the wafer S is supplied. The generated reaction gas is turned into plasma and the wafer S is processed.

The semiconductor manufacturing apparatus 30 having the above structure
When the wafer S is attracted and held by using, the wafer S is first placed on the electrostatic chuck 54, and then the DC power supply 75 is turned on to apply a DC voltage to the conductor layer 54b of the electrostatic chuck 54. Then, the electrostatic chuck 54 is positively or negatively charged, and an electrostatic force is generated between the wafer S and the electrostatic chuck 54. The wafer S is electrostatically chucked by this electrostatic force.
It will be surely adsorbed and held on the surface of No. 4.

When the wafer S is to be detached from the electrostatic chuck 54 after the film formation or etching process, first, the DC
By turning off the power supply 75 and weakening the electrostatic force, the attraction force between the wafer S and the electrostatic chuck 54 is weakened, and the wafer S is separated from the electrostatic chuck 54.

As described above, in the semiconductor manufacturing apparatus 30, the degree of adhesion between the wafer S and the electrostatic chuck 54 can be obtained, but on the other hand, there is a problem that it is difficult to separate the wafer S after the processing, and in order to solve this problem. As a countermeasure, an electrostatic chuck in which a disengagement knock pin is provided is known.

When a semiconductor manufacturing apparatus in which a releasing knock pin is arranged in such an electrostatic chuck is used to release a processed wafer, the DC power supply is first turned off, and then the releasing knock pin is used. The wafer is pushed up from the back surface and separated from the electrostatic chuck. However, immediately after the application of the DC power supply is stopped, electric charges still remain in the wafer, and the attraction force of the electrostatic chuck remains. This residual adsorption force decreases with the lapse of time, but the reduction rate varies depending on the characteristics of the wafer, the processing temperature, the applied voltage, and the like. When the residual suction force after the voltage application is large, the push-up force concentrates on the contact portion of the wafer with the disengagement knock pin, causing damage in the vicinity of the wafer and lowering the yield of the wafer. .

In order to solve such a problem, there has been proposed an electrostatic chuck in which a disengagement knock pin exposing a metal in a contact portion with a wafer is provided (Japanese Patent Laid-Open No. 63-63).
No. 281430 and Japanese Patent Laid-Open No. 4-117188).

FIG. 6 is a schematic sectional view showing an electrostatic chuck described in JP-A-63-281430. 6 in the figure
Reference numeral 4 denotes an electrostatic chuck, in which an insulator layer 64a is formed on the surface of a conductor 64b, and a DC power source 6 is provided on the conductor 64b.
5 is connected. Further, the electrostatic chuck 64 is internally provided with a grounding knock pin 68 so as to be able to move up and down. The main body 68a of the knock knock pin 68 is made of metal such as stainless steel, and the surface of the main body 68a is a wafer S. It is covered with an insulator layer 68b made of alumina or the like except for a portion contacting with.

When the wafer S is detached using the electrostatic chuck 64 having such a configuration, the DC power source 65 is first turned off, and then the metal exposed portion of the detachment knock pin 68 is brought into contact with the wafer S. Then, the electric charge accumulated on the wafer S is released, and the attraction force between the electrostatic chuck 64 and the wafer S is weakened. After that, the wafer S
Is pushed up from the back surface to separate the wafer S.

Further, in the electrostatic chuck described in Japanese Patent Laid-Open No. 4-117188, a disengagement knock pin grounded to the electrostatic chuck is provided so as to be capable of moving up and down, and a contact portion of the disengagement knock pin with the wafer is made of metal. It is formed using a conductor.

When the electrostatic chuck having such a structure is used to separate the wafer, the conductor of the separation knock pin is brought into contact with the wafer to release the charge accumulated in the wafer, The attraction force between the electrostatic chuck and the wafer is weakened, and thereafter, the wafer is detached by pushing up the wafer from the back surface using the detachment knock pin.

[0013]

In the conventional electrostatic chuck 64 shown in FIG. 6, when the grounded main body 68a is brought into contact with the wafer S, the electric charge accumulated in the wafer S is promptly released. Therefore, the electrostatic chuck 64
Even if the residual suction force between the wafer S and the wafer S is large, the wafer S can be easily and safely detached. Further, since the insulator layer 68b is formed on the surface of the main body 68a, damage to the detachment knock pin 68 is prevented during the processing of the wafer S by the plasma.

However, since the insulator layer 68b is formed and the insulator layer 68b at the contact portion with the wafer S is flattened to expose the main body 68a, the structure of the knock pin 68 for detachment is formed. However, there is a problem in that the manufacturing process is complicated, the manufacturing process is troublesome, and the manufacturing cost is high.

Moreover, the metal body 68a is exposed at the contact portion of the disengagement knock pin 68 with the wafer S,
There is a problem that the wafer S is contaminated by the metal.

Further, in the electrostatic chuck disclosed in the above-mentioned Japanese Patent Laid-Open No. 4-117188, since the electric charge accumulated in the wafer is quickly released, the attraction force between the electrostatic chuck and the wafer is increased. Even if the wafer is large, the wafer can be easily and safely removed, but there is also a problem that the wafer is contaminated by the metal forming the contact portion of the detaching knock pin with the wafer.

The present invention has been made in view of the above problems, and it is possible to quickly discharge the charges accumulated in the wafer, and even when the residual attraction force between the wafer and the electrostatic chuck is large, It is possible to easily remove the wafer without damaging the wafer, and it is possible to reduce the contamination of the wafer with metal even though it has a simple structure, thus improving the production efficiency and the yield of the wafer. An object of the present invention is to provide a semiconductor manufacturing apparatus that can reduce costs.

[0018]

In order to achieve the above object, a semiconductor manufacturing apparatus according to the present invention is a semiconductor manufacturing apparatus in which an electrostatic chuck is incorporated, and a detachment knock pin for separating a wafer from the electrostatic chuck. It is characterized in that at least the surface portion is coated with conductive ceramics (1).

Further, the semiconductor manufacturing apparatus according to the present invention is a semiconductor manufacturing apparatus in which an electrostatic chuck is incorporated, wherein at least a surface portion of a transfer wafer claw for transferring a wafer from or to the electrostatic chuck is made conductive. It is characterized by being coated with a conductive ceramic (2).

[0020]

The electric resistance of the wafer is usually 1 to 50 Ω · cm. TiO ₂ as a conductive ceramic having an electric resistance value of 0.01 to 0.1 Ω · cm, which is sufficiently lower than this value, and having 10 ¹¹ to 10 ¹² or less metal molecules attached to the wafer surface by contact. , V ₂ O ₃ , V ₂ O ₅ , V
O ₂ , TiNZnO, PbO _{2 and the} like can be mentioned, and when such a conductive ceramic is brought into contact with the wafer on which electric charge is accumulated, the electric charge is rapidly released into the conductive ceramic, and It produces almost no metal contamination.

Therefore, according to the semiconductor manufacturing apparatus (1) having the above-mentioned structure, since at least the surface portion of the detaching knock pin for detaching the wafer from the electrostatic chuck is covered with the conductive ceramics, By the abutment of the disengagement knock pin on the wafer, the electric charge accumulated in the wafer is rapidly released through the conductive ceramics on the surface of the disengagement knock pin. Therefore, even when the residual attraction force acting between the wafer and the electrostatic chuck is large, the attraction force is weakened in a short time, the detachment is smooth, and the wafer is detached without being damaged. It is possible to improve the production efficiency and the yield of the wafer.

Further, even if the conductive ceramics come into contact with each other, the amount of metal deposited on the surface of the wafer is small, and the metal contamination of the wafer hardly occurs.

Further, since the conductive ceramic has conductivity, it is not necessary to cut the contact portion with the wafer, and therefore the structure is simplified, the manufacturing process is reduced, and the cost is reduced.

Further, according to the semiconductor manufacturing apparatus (2) having the above structure, at least the surface portion of the transfer wafer claw for transferring the wafer from or to the electrostatic chuck is coated with the conductive ceramics. Therefore, when the transfer wafer claw comes into contact with the wafer, the electric charge accumulated in the wafer is quickly released through the conductive ceramics on the transfer wafer claw surface. Therefore, even when the residual attraction force acting between the wafer and the electrostatic chuck is large,
The suction force is weakened in a short time, and the detachment becomes smooth,
The wafer is detached without being damaged, so that it is possible to improve the production efficiency and the yield of the wafer.

Further, even if the conductive ceramics come into contact with each other, the amount of metal adhering to the surface of the wafer is small, and the metal contamination of the wafer hardly occurs.

Further, since the conductive ceramics have conductivity, it is not necessary to cut the contact portion with the wafer, so that the structure is simplified, the number of manufacturing steps is reduced, and the cost is reduced.

[0027]

Embodiments of the semiconductor manufacturing apparatus according to the present invention will be described below with reference to the drawings. It should be noted that components having the same functions as those of the conventional example are designated by the same reference numerals. FIG. 1 is a schematic sectional view showing a semiconductor manufacturing apparatus according to an embodiment. Reference numeral 10 in the figure denotes a semiconductor manufacturing apparatus. An upper electrode 12 having a gas introduction hole (not shown) is arranged in the center of a processing chamber 11, and an RF power source 15 is connected to the upper electrode 12. Has been done. The upper electrode 12 is fixed to the upper electrode holding portion 14 of the processing chamber 11 via an insulating ring 13 made of ceramic such as alumina. The processing chamber 11
On both side walls 11b of the wafer S, a loading hole 16 and a loading hole 17 for the wafer S are provided.
Are formed and sealed by using the closing devices 16a and 17a, respectively. An exhaust pipe 18 connected to a vacuum pump (not shown) is connected to the lower wall 11c of the processing chamber 11, and an insulating ring 19 is arranged on the side of the lower wall 11c. A lower electrode 20 made of aluminum is disposed on the insulating ring 19, and an RF power source 22 is connected to the lower electrode 20 via a conductive wire 21. Electric chuck 24
And the wafer S is placed on the electrostatic chuck 24. The electrostatic chuck 24 is a conductor 24.
b around the insulator layer 24a by means such as alumina spraying
Are formed to form the conductor 24b.
To the DC power source 25 via the lead wire 23a and the switch 23.
Are connected. In addition, the conductive wire 2 in the lower electrode 20
An insulating cylinder 20a is interposed in a portion where 3a penetrates. Further, a flow path 26 is formed in the electrostatic chuck 24, and an introduction pipe 26a and a discharge pipe 26b are connected to the flow passage 26, and the cooling liquid circulates through the flow path 26 from the introduction pipe 26a and the discharge pipe. The electrostatic chuck 24 is cooled by being discharged from 26b. In addition, the electrostatic chuck 24 has a space 27 formed therein.
7, a lift base 28b having a plurality of disengagement knock pins 28a formed of conductive ceramics containing 70% of TiO ₂ as a main component and SiO ₂ as a binder is provided, and a lift base 28b is provided below the lift base 28b. A drive device 28d is disposed on the lift shaft 28c via a lifting shaft 28c, and the lift base 28b is grounded. Further, the insulating layer 24a and the conductor 24b above the space 27 are formed with insertion holes 24c for the knock pins 28a for detachment, and when the driving device 28d is driven, the elevating shaft 28c rises and the electrostatic chuck 24 is placed above. The wafer S mounted on the wafer is pushed up by the knock-out knock pin 28a.

The electrostatic chuck 24 and the lower electrode 20 are fixed to the insulating ring 19 by using the lower electrode pressing ring 29. Then, the cooling liquid is circulated in the flow path 26 to set the wafer S to a predetermined temperature, the RF power sources 15 and 22 are turned on, and high-frequency power is applied to the upper electrode 12 and the lower electrode 20, so that the gas is introduced from the gas introduction hole. The supplied reaction gas is turned into plasma, and the wafer S is etched.

The semiconductor manufacturing apparatus 10 thus configured
When the wafer S is attracted and held by using, the wafer S is first placed on the electrostatic chuck 24, and then the DC power supply 25 is turned on to apply a DC voltage to the conductor 24b of the electrostatic chuck 24. Then, the electrostatic chuck 24 is positively or negatively charged, and an electrostatic force is generated between the wafer S and the electrostatic chuck 24. Therefore, the wafer S is surely adsorbed and held on the surface of the electrostatic chuck 24.

When the wafer S is to be detached from the electrostatic chuck 24 after the wafer S is dry-etched, for example, the DC power supply 25 is first turned off, and then the wafer S is removed.
The disengagement knock pin 28a is brought into contact with and the electric charge accumulated in the wafer S is taken. Next, the drive device 28d
Is operated to raise the elevating shaft 28c, push up the detaching knock pin 28a, and detach the wafer S from the electrostatic chuck 24.

As described above, in the semiconductor manufacturing apparatus 10 according to this embodiment, the disengagement knock pin 28 is attached to the wafer S.
By bringing a into contact with the a, the electric charge accumulated in the wafer S can be quickly released through the conductive ceramics on the surface of the knock pin 28a for detachment. Therefore, even when the residual suction force acting between the wafer S and the electrostatic chuck 24 is large, the suction force can be weakened in a short time, and the separation can be performed smoothly.
Can be removed without damaging the wafer, and the production efficiency and the yield of the wafer S can be improved. Further, it is possible to eliminate the occurrence of positional deviation due to the bouncing of the wafer S, and it is possible to prevent the occurrence of transfer trouble.

Further, even if the conductive ceramics come into contact with the surface of the wafer S, the material that hardly causes metal adhesion to the surface of the wafer S can reduce metal contamination of the wafer S.

Further, it is possible to eliminate the need to cut the contact portion of the disengagement knock pin 28a with the wafer S,
Therefore, the structure of the electrostatic chuck 24 can be simplified, the number of manufacturing steps can be reduced, and the cost can be reduced.

FIG. 2 is a schematic view of a semiconductor manufacturing apparatus according to another embodiment, and FIG. 3 is a sectional view showing a carrying gripping tool. Reference numeral 31 in the figure denotes a reaction container, and the reaction container 31 forms a plasma generation chamber 32 and a processing chamber 33. The peripheral wall of the plasma generation chamber 32 has a double structure, and the inside thereof has a cooling chamber 34 through which cooling water flows.
A microwave introduction hole 32a is formed substantially in the center of the left wall of the plasma generation chamber 32, and a quartz plate 32b is arranged to the left of the microwave introduction hole 32a. To the waveguide 32c. Also,
A plasma extraction window 32 is provided on the right side of the plasma generation chamber 32.
d is formed, and the processing chamber 33 is disposed so as to face the plasma extraction window 32d. A turbo molecular pump 35 and a rotary pump 36 for setting a predetermined pressure inside the processing chamber 33 are connected to the right side wall of the processing chamber 33. Further, an exciting coil 37 is concentrically arranged around the plasma generating chamber 32 and the one end of the waveguide 32c connected to the plasma generating chamber 32 so as to surround them.

On the other hand, in the processing chamber 33, an electrostatic chuck 38 for holding the wafer S by electrostatic attraction is arranged at a position facing the plasma extraction window 32d. An electrode plate 39 is embedded inside the electrostatic chuck 38, and a DC power supply 41 is connected to the electrode plate 39 via a connecting wire 39 a and a matching box 40. Also, electrostatic chuck 3
A cooling liquid flow path 42 is formed in the inside of the unit 8, and a double magnetic coil 38 a is arranged to the right of the cooling liquid flow path 42.

Reference numeral 32e in the figure denotes a reaction gas supply pipe communicating with the plasma generation chamber 32, and 33b denotes a processing chamber 3
3 shows a reaction gas supply pipe communicating with No. 3, 34a, 3
Reference numeral 4b denotes a cooling water supply pipe and a cooling water supply pipe, and 42a,
42b has shown the supply pipe and discharge pipe of a cooling liquid.

Further, a wafer loading chamber 43 is arranged below the processing chamber 33, a cassette 43a containing a wafer S is arranged in the wafer loading chamber 43, and an electrostatic chuck 38 and a cassette 43a are provided. A transfer robot 44, which is grounded (not shown) for moving the wafer S between them, is provided.

A wafer cassette chamber 43b is formed on the left side of the wafer loading chamber 43, and a cassette 43c containing a wafer S is arranged in the wafer cassette chamber 43b. A turbo molecular pump 51 and a rotary pump 52 are connected to the wafer cassette chamber 43b in order to maintain the same pressure in the chamber 43b as that in the processing chamber 33.

The transfer robot 44 is provided with the transfer gripper 45 shown in FIG. 3, and the transfer wafer claws 48 are connected to both ends of the gripper body 46 via solenoids 47. The carrier wafer claw 48 is made of metal having a thickness of 8 mm, a width of 15 mm and a length of 200 mm, and is used as a main body 48.
a is formed, and the surface of the main body 48a is mainly composed of TiO.
It is coated with a conductive ceramic containing 70% of ₂ and added with SiO ₂ as a binder. Also,
The transfer wafer claw 48 is configured to be rotatable around a support shaft 49 as a fulcrum, and the transfer wafer claw 48 is opened and closed by the expansion and contraction of the solenoid 47 so that the wafer S is gripped or released. Further, covers 50 are provided at both ends of the grip tool main body 46 to cover the connection side of the transfer wafer claw 48 and the solenoid 47 and the support shaft 49.

Using the semiconductor manufacturing apparatus having such a configuration,
When attracting and holding the wafer S, first, the DC power supply 41 is turned on to apply a DC voltage to the electrode plate 39 in the electrostatic chuck 38. Then, the electrostatic chuck 38 is positively or negatively charged, and an electrostatic force is generated between the wafer S and the electrostatic chuck 38. Therefore, the wafer S is securely attracted and held on the surface of the electrostatic chuck 38.

When the wafer S is to be detached from the electrostatic chuck 38 after the film formation or the etching process, first, D
The C power source 41 is turned off, and then the transfer gripping tool 45 is moved to the vicinity of the wafer S, and the transfer wafer claw 48 is once opened and then closed to grip the wafer S. Then, the carrier wafer claw 48 comes into contact with the wafer S, so that the electric charges accumulated in the wafer S are promptly released, thereby weakening the attraction force between the wafer S and the electrostatic chuck 38. The S is separated from the electrostatic chuck 38.

As described above, in the semiconductor manufacturing apparatus according to the present embodiment, since the surface portion of the transfer wafer claw 48 for transferring the wafer S is covered with the conductive ceramics,
By bringing the transfer wafer claw 48 into contact with the wafer S,
The charges accumulated in the wafer S can be promptly discharged through the conductive ceramics on the surface of the transfer wafer claw 48. Therefore, the wafer S and the electrostatic chuck 24
Even if the residual suction force with is large, the suction force can be weakened in a short time, and the separation can be performed smoothly,
The wafer S can be detached without damaging the wafer S, and the production efficiency and the yield of the wafer S can be improved.

Further, even if the conductive ceramics come into contact with each other, almost no metal adheres to the surface of the wafer S, and the metal contamination of the wafer S can be reduced.

Further, it is possible to eliminate the need for shaving the contact portion of the transfer wafer claw 48 with the wafer S, so that the structure of the transfer gripper 45 can be simplified.
The number of manufacturing steps can be reduced, and the cost can be reduced.

In addition, even when the electrostatic chuck 38 is not horizontal (see FIG. 2), the wafer S is held by the transfer wafer claw 48 when the wafer S is detached, so that the wafer S
Can be safely removed without dropping.

FIG. 4 is a plan view showing a carrying gripping tool equipped in a semiconductor manufacturing apparatus according to still another embodiment.
The configuration and usage of the semiconductor manufacturing apparatus according to the embodiment other than the carrying gripping tool are the same as those of the above-described embodiment shown in FIG. 2, and therefore the description thereof is omitted here.
In the figure, reference numeral 55 denotes a carrying gripping tool, which includes 70% of TiO ₂ as a main component and SiO ₂ as a binder through a solenoid 57 at both ends of a U-shaped gripping tool body 56.
A transfer wafer claw 58 having a thickness of 8 mm, a width of 15 mm, and a length of 200 mm formed of conductive ceramics to which is added is connected, and the transfer wafer claw 58 is provided on both sides of the grip body 56. A compression spring 61 connected to is provided. The transfer wafer claw 58 is configured to be rotatable around a support shaft 59, and the transfer wafer claw 58 is opened and closed by the expansion and contraction of the solenoid 57 and the spring force of the compression spring 61, and the wafer S is gripped or released. It is like this.

When the wafer S is to be detached from the electrostatic chuck 38 after the film formation or the etching process by using the semiconductor manufacturing apparatus equipped with the carrying gripper 55 having such a structure, the detachment according to the other embodiment described above is performed. Same as method.

As described above, in the semiconductor manufacturing apparatus according to this embodiment, in addition to the same effects as in the semiconductor manufacturing apparatus (FIG. 2) in the above-described another embodiment, the transfer wafer claw 58 has the conductive ceramics. Since it is formed by, it is possible to eliminate the need for shaving the contact portion with the wafer S, the structure of the transfer wafer claw 58 can be made simpler, the manufacturing process can be further reduced, and the cost can be reduced. Can be further improved.

In the above-mentioned embodiment, the case where the conductive ceramics containing TiO ₂ as a main component is used has been described, but in another embodiment, other V ₂ O ₃ , V ₂ O ₅ , and V ₂ are used.
Conductive ceramics containing O ₂ , TiNZnO, PbO ₂ or the like as a main component can be used.

Further, in the above-described embodiment, the case where the semiconductor manufacturing apparatus is the parallel plate type plasma apparatus and the horizontal type ECR plasma processing apparatus has been described, but in another embodiment, the semiconductor manufacturing apparatus has another etching apparatus or thin film forming apparatus. The present invention can be similarly applied to a device.

[0051]

As described in detail above, in the semiconductor manufacturing apparatus according to the present invention, at least the surface portion of the knocking pin for releasing the wafer from the electrostatic chuck is coated with the conductive ceramics. By bringing the disengagement knock pin into contact with the wafer, the electric charge accumulated in the wafer can be promptly released through the conductive ceramics on the surface of the disengagement knock pin. Therefore, even when the residual suction force acting between the wafer and the electrostatic chuck is large, the suction force can be weakened in a short time, the separation can be smoothly performed, and the wafer is damaged. Can be removed without any further, it is possible to prevent the displacement of the wafer from occurring, it is possible to prevent the occurrence of transport trouble,
The production efficiency and the yield of the wafer can be improved.

Further, even if the conductive ceramics come into contact with each other, almost no metal adheres to the surface of the wafer, and the metal contamination of the wafer can be reduced.

Further, it is possible to eliminate the need to cut the contact portion with the wafer, and therefore, it is possible to simplify the structure of the disengagement knock pin, to reduce the manufacturing process, and to reduce the cost. You can

Further, in the semiconductor manufacturing apparatus according to the present invention, since the surface portion of the transfer wafer claw is covered with the conductive ceramics, by bringing the transfer wafer claw into contact with the wafer, The charges accumulated in the wafer can be promptly discharged through the conductive ceramics on the surface of the transfer wafer claw. Therefore, even if the attraction force between the wafer and the electrostatic chuck is large, the attraction force can be weakened in a short time, the detachment can be smoothly performed, and the wafer can be detached without being damaged. Therefore, the production efficiency and the yield of the wafer can be improved.

Further, even if the conductive ceramics come into contact with each other, almost no metal adheres to the surface of the wafer, and the metal contamination of the wafer can be reduced.

Furthermore, it is possible to eliminate the need to cut the contacting portion with the wafer, which simplifies the structure of the transfer knock pin, reduces the number of manufacturing steps, and lowers the cost. You can

[Brief description of drawings]

FIG. 1 is a sectional view schematically showing an embodiment of a semiconductor manufacturing apparatus according to the present invention.

FIG. 2 is a sectional view schematically showing a semiconductor manufacturing apparatus according to another embodiment.

FIG. 3 is a horizontal cross-sectional view schematically showing a carrier holding tool equipped in a semiconductor manufacturing apparatus according to another embodiment.

FIG. 4 is a partial horizontal cross-sectional view schematically showing a carrier grip provided in a semiconductor manufacturing apparatus according to still another embodiment.

FIG. 5 is a sectional view schematically showing a conventional semiconductor manufacturing apparatus.

FIG. 6 is a cross-sectional view schematically showing a knock pin for detachment mounted on another conventional semiconductor manufacturing apparatus.

[Explanation of symbols]

 10 Semiconductor Manufacturing Equipment 24, 38 Electrostatic Chuck S Wafer 28a Release Knock Pins 48, 58 Transfer Wafer Claw

Claims (2)

[Claims] 1. A semiconductor manufacturing apparatus having a built-in electrostatic chuck, wherein at least a surface portion of a disengagement knock pin for separating a wafer from the electrostatic chuck is coated with a conductive ceramic. . 2. In a semiconductor manufacturing apparatus having an electrostatic chuck built-in, at least a surface portion of a transfer wafer claw for transferring a wafer from or to the electrostatic chuck is coated with a conductive ceramic. A semiconductor manufacturing apparatus characterized by: