TWI374475B - - Google Patents

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TWI374475B
TWI374475B TW094112570A TW94112570A TWI374475B TW I374475 B TWI374475 B TW I374475B TW 094112570 A TW094112570 A TW 094112570A TW 94112570 A TW94112570 A TW 94112570A TW I374475 B TWI374475 B TW I374475B
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Taiwan
Prior art keywords
substrate
space
gas
back surface
generated
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TW094112570A
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Chinese (zh)
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TW200535985A (en
Inventor
Tsuyoshi Moriya
Hiroyuki Nakayama
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/0209—Cleaning of wafer backside

Description

1374475 (1) 九、發明說明 【發明所屬之技術領域】 本發明係有關基板洗淨裝置及基板洗淨方法；尤其， 有關對被施加有電漿處理之基板，去除附著於其背面之異 物的基板洗淨裝置及基板洗淨方法。 【先前技術】1374475 (1) IX. Description of the Invention [Technical Field] The present invention relates to a substrate cleaning apparatus and a substrate cleaning method; in particular, to a substrate to which plasma treatment is applied, removing foreign matter attached to the back surface thereof Substrate cleaning device and substrate cleaning method. [Prior Art]

通常，半導體裝置之製程中，對被處理體亦即半導體 晶圓（以下稱爲「晶圓」），係施加有蝕刻或濺鍍、CVD (化學氣相沉積）等，使用了電漿的處理（以下稱爲「電 漿處理」）。 例如，用以施加電漿處理之電漿處理裝置80，係如 第8圖所示，具備收容晶圓之圓筒形容器8 1 ;和配置於 該圓筒形容器81之內部，做爲放置晶圓之放置台的感受 器 82;和向著晶圓被放置之面（以下稱爲「放置 面」），貫穿感受器82而配置的推進針83。感受器82, 在放置面具有配置了連接於直流電源84之電極的靜電夾 85;更且其內部，具有連接於高頻電源86的下部電極87 (例如參考專利文件1 )= 電漿處理裝置80中，靜電夾85以靜電吸附力將晶圓 吸附於放置面後，對下部電極87施加高頻電力，在圓筒 形容器81內之上面和感受器82之間產生高頻電場，使被 被圖 。 未 漿C 電環 η 1 產聚 而之 化圍 離包 游而 體圍 氣周 理圓 處晶 之於 內置 1 配 8由 器會 容 ’ 形漿 筒電 圓的 入生 導產 (2) (2)1374475 示）而集束於晶圓表面，來蝕刻晶圓表面形成的氧化膜。 又，施加了蝕刻處理的晶圓，會由推進針83自放置 面被抬起，藉由進入圓筒形容器81之純量（Scalar)臂 等搬運裝置（未圖示）而自圓筒形容器81被搬出。 電漿處理中產生的電漿中，沒有被集束至晶圓表面 者，會衝狀元筒形容器81之內壁而產生微粒。又，蝕刻 處理中會產生反應產生物。此等微粒和反應產生物，雖然 幾乎都會以未圖示之排氣裝置而自圓筒形容器 81被排 出，但留在圓筒形容器81內之一部分微粒或反應產生 物，會堆積於放置面。又，感受器82因電將等造成的微 粒也會堆積於放置面。此等堆積於放置面之微粒或反應產 生物，在晶圓被放置於放置面時，會成爲異物而附著於晶 圓背面。做爲去除此種附著於晶圓背面之微粒或反應產生 物的去除方法，已知有使用洗淨液等的濕洗淨。 又，做爲不使用洗淨液之方法，亦已知有在被推進針 抬起之晶圓和放置面之間產生電漿，藉由所產生之電漿的 離子之濺鏟作用，或是自由離子之化學反應作用，而去除 晶圓背面之爲例的去除方法（例如參考專利文件2)。 [專利文件1]日本特開平5-226291號公報（第1圖） [專利文件2]美國專利第4962049號說明書（第2欄 第67行至第3欄第17行） 【發明內容】 發明所欲解決之課題 (3) (3)1374475 然而，反覆洗淨晶圓之後，洗淨液會被污染。從而， 晶圓洗淨中會有因被污染之洗淨液所包含的微粒等，而污 染晶圓表面的問題。又，施加有蝕刻處理之晶圓，在之後 工程之室搬入等時，會有未被去除之微粒污染該室內部的 狀況。 又，以電漿去除晶圓背面之微粒時，被產生之電漿會 電晶圓扁面施加過度電漿處理，而損傷晶圓；例如，有對 晶圓表面施加過度晶圓處理，而產生過度蝕刻的問題》 本發明之目的，係提供一種不會損傷基板，而可充分 去除附著於基板背面之異物的，基板洗淨裝置。 用以解決課題之手段 爲了達成上述目的，申請專利範圍第1項所記載之基 板洗淨裝置’其特徵係具備收容基板的收容室；和配置於 收容室內’放置上述基板的放置台；和配置於該放置台， 被施加電壓而將上述基板吸附於上述放置台的電極；和將 上述收容室內加以排氣的排氣裝置；和分離上述放置台及 上述基板’使上述放置台及上述基板之間產生空間的分離 裝置；和對上述空間供給氣體的氣體供給裝置；當上述空 間產生時’對上述電極施加電壓，上述氣體供給裝置會對 上述空間供給氣體’而上述排氣裝置則將上述收容室內排 氣。 申請專利範圍第2項所記載之基板洗淨裝置，係針對 申請專利範圍第]項所記載之基板洗淨裝置，其特徵爲更 -6 - (4) (4)1374475 具備在上述收容室內被減壓且產生上述空間時，將氣體導 入上述收容室內的氣體導入部者。 申請專利範圍第3項所記載之基板洗淨裝置，係針對 申請專利範圍第1項或第2項所記載之基板洗淨裝置，其 特徵爲上述電極係不連續的被施加電壓者。. 申請專利範圍第4項所記載之基板洗淨裝置，係針對 申請專利範圍第3項所記載之基板洗淨裝置，其特徵爲上 述電極係被交互施加極性不同的電壓者。 申請專利範圍第5項所記載之基板洗淨裝置，係針對 申請專利範圍第4項所記載之基板洗淨裝置，其特徵爲上 述電壓之絕對値係在5 Ο Ο V以上者。 申請專利範圍第6項所記載之基板洗淨裝置，係針對 申請專利範圍第5項所記載之基板洗淨裝置，其特徵爲上 述電壓之絕對値係在2kV以上者。 申請專利範圍第7項所記載之基板洗淨裝置，係針對 申請專利範圍第1項至第6項之任一項所記載之基板洗淨 裝置’其特徵爲上述排氣裝置在上述空間產生時，係保持 上述收容室內之壓力在133Pa以上者。 申請專利範圍第8項所記載之基板洗淨裝置，係針對 申請專利範圍第7項所記載之基板洗淨裝置，其特徵爲上 述排氣裝置在上述空間產生時，係保持上述收容室內之壓 力在1·33χ1〇3〜1.33x]04Pa的範圍者。 爲了達成上述目的，申請專利範圍第9項所記載之基 板洗 '淨裝置，其特徵係具備收容基板的收容室；和配置於 (5) (5)1374475 收容室內，放置上述基板的放置台；和將上述收容室內加 以排氣的排氣裝置；和分離上述放置台及上述基板，使上 述放置台及上述基板之間產生空間，同時接觸上述基板並 對上述基板施加電壓的分離裝置；和對上述空間供給氣體 的氣體供給裝置；和將氣體導入上述收容室內的氣體導入 部；當上述空間產生時，對上述電極施加電壓，上述氣體 供給裝置會對上述空間供給氣體，而上述排氣裝置則將上 述收容室內排氣’更且當上述收容室內被減壓且產生上述 空間時，上述氣體導入部會將氣體導入上述收容室內。 爲了達成上述目的，申請專利範圍第10項所記載之 基板洗淨方法，係去除附著於基板背面之異物的基板洗淨 方法；其特徵係具有將基板收容於收容室的收容步驟；和 將上述基板，放置於配置在上述收容室之放置台的放置步 驟；和使上述放置台及上述基板之間產生空間地，來分離 上述放置台及上述基板的分離步驟；和當上述空間產生 時’對配置於上述放置台之電極施加電壓的電壓施加步 驟；和當上述空間產生時，對上述空間供給氣體的氣體供 給步驟；和當上述空間產生時，將上述收容室內排氣的排 氣步驟。 申請專利範圍第1 1項所記載之基板洗淨方法.，係針 對申請專利範圍第I 0項所記載之基板洗淨方法，其特徵 爲更具備在上述收容室內被減壓且產生上述空間時，將氣 體導入上述收容室內的氣體導入步驟者。 申請專利範圍第1 2項所記載之基板洗淨方法，係針 -8- (6) (6)1374475 對申請專利範圍第1 0項或第Π項所記載之基板洗淨方 法，其特徵爲上述電壓施加步驟中，係對上述電極不連續 的施加電壓者。 申請專利範圍第1 3項所記載之基板洗淨方法，係針 對申請專利範圍第12項所記載之基板洗淨方法，其特徵 爲上述電壓施加步驟中，係對上述電極交互施加極性不同 的電壓者。 爲了達成上述目的，申請專利範圍第14項所記載之 基板洗淨方法，係去除附著於基板背面之異物的基板洗淨 方法；其特徵係具有將基板收容於收容室的收容步驟；和 將上述基板，放置於配置在上述收容室之放置台的放置步 驟；和使上述放置台及上述基板之間產生空間地，來分離 上述放置台及上述基板的分離步驟；和當上述空間產生 時，對上述基板施加電壓的電壓施加步驟.；和當上述空間 產生時’對上述空間供給氣體的氣體供給步驟；和當上述 空間產生時’將上述收容室內排氣的排氣步驟；和當上述 收容室內被減壓且產生上述空間時，將氣體導入上述收容 室內的氣體導入步驟。 發明效果 若依申請專利範圍第1項所記載之基板洗淨裝置，當 放置台及基板之間產生空間時，因對配置於放置台的電極 施加電壓’故上述空間中會產生靜電場，而於基板之背面 作用有靜電性作用力。依此，附著於基板背面之異物會脫 -9- (7) (7)1374475 離。又，上述空間產生時，因對空間供給有氣體，而收容 室內被排氣，故空間中會產生氣流，因該氣流而脫離之異 物會自空間被排除，進而自收容室被排氣。從而，基板洗 淨裝置可不損傷基板，而充分去除附著於基板背面之異 物。 若依申請專利範圍第2項所記載之基板洗淨裝置，當 收容室內被減壓時，因將氣體導入收容室內，故收.容室內 會產生行進衝擊波，以該衝擊波，使附著於基板背面之異 物脫離至空間中。從而，基板洗淨裝置可不損傷基板，而 充分去除附著於基板背面之異物。 若依申請專利範圍第3項所記載之基板洗淨裝置，因 對電極不連續的施加電壓，故對電極的電壓施加是反覆進 行。依此，基板之背面會反覆作用有靜電的作用力。從 而，可充分去除附著於基板背面之異物。 若依申請專利範圍第4項所記載之基板洗淨裝置，因 交互施加有極性不同的電壓，故可防止基板帶電。若基板 帶電，藉由施加電壓而作用於基板背面的靜電性作用力會 變小。從而，藉由防止基板帶電，可防止附著於基板背面 之異物的去除效率低落。 若依申請專利範圍第5項所記載之基板洗淨裝置，因 空間產生時，施加於電極之電壓在5 00V以上，故可加大 作用於基板背面之靜電性作用力，而可確實的進行異物的 脫離。 若依申請專利範圍第6項所記載之基板洗淨裝置，因 -10- (8) (8)1374475 上述電壓在2kV以上，故可更加大上述靜電性作用力。 若依申請專利範圍第7項所記載之基板洗淨裝置，因 排氣裝置將收容室內的壓力維持在133Pa以上，故在空間 中可產生氣體流阻力較大的阻力流。自基板背面脫離的異 物，會被捲入阻力流中，與收容室內的氣體一同自收容室 被排氣。從而，可確實去除附著於基板背面之異物。 若依申請專利範圍第8項所記載之基板洗淨裝置，因 排氣裝置會將收容室內之壓力保持在1.33X103〜1.33χ 104Pa的範圍，故可在空間中確實產生阻力流。 若依申請專利範圍第9項所記載之基板洗淨裝置，當 放置台及基板之間產生空間時，因對配置於放置台的電極 施加電壓’故上述空間中會產生靜電場，而於基板之背面 作用有靜電性作用力。依此，附著於基板背面之異物會脫 離。更且’當空間產生且收容室內被減壓時，因將氣體導 入收容室內，故收容室內會產生行進衝擊波，以該衝擊 波’使附著於基板背面之異物脫離至空間中。又，上述空 間產生時’因對空間供給有氣體，而收容室內被排氣，故 空間中會產生氣流，因該氣流而脫離之異物會自空間被排 除’進而自收容室被排氣。從而，基板洗淨裝置可不損傷 基板’而充分去除附著於基板背面之異物。 若依申請專利範圍第1 〇項所記載之基板洗淨方法， 當放置台及基板之間產生空間時'因對配置於放置台的電 極施加電壓’故上述空間中會產生靜電場，而於基板之背 面作用有靜電性作用力。依此，附著於基板背面之異物會 -11 - (9) (9)1374475 脫離。又，上述空間產生時，因對空間供給有氣體，而收 容室內被排氣，故空間中會產生氣流，因該氣流而脫離之 異物會自空間被排除，進而自收容室被排氣。從而，基板 洗淨裝置可不損傷基板，而充分去除附著於基板背面之異 物。 若依申請專利範圍第11項所記載之基板洗淨方法， 當空間產生且收容室內被減壓時，因將氣體導入收容室 內，故收容室內會產生行進衝擊波，以該衝擊波，使附著 於基板背面之異物脫離至空間中。從而，基板洗淨裝置可 不損傷基板，而充分去除附著於基板背面之異物。 若依申請專利範圍第1 2項所記載之基板洗淨方法， 因對電極不連續的施加電壓，故對電極的電壓施加是反覆 進行。依此，基板之背面會反覆作用有靜電的作用力。從 而，·可充分去除附著於基板背面之異物。 若依申請專利範圍第1 3項所記載之基板洗淨方法， 因交互施加有極性不同的電壓，故可防止基板帶電。若基 板帶電，藉由施加電壓而作甩於基板背面的靜電性作用力 會變小。從而，藉由防止基板帶電，可防止附著於基板背 面之異物的去除效率低落。 若依申請專利範圍第1 4項所記載之基板洗淨方法， 當放置台及基板之間產生空間時，因對配置於放置台的電 極施加電壓，故上述空間中會產生靜電場.，而於基板之背 面作用有靜電性作用力。依此，附著於基板背面之異物會 脫離。更且’當空間產生且收容室內被減壓時，因將氣體 -12 - (10) (10)1374475 導入收容室內，故收容室內會產生行進衝擊波，以該衝擊 波，使附著於基板背面之異物脫離至空間中。又，上述空 間產生時，因對空間供給有氣體，而收容室內被排氣，故 空間中會產生氣流，因該氣流而脫離之異物會自空間被排 除，進而自收容室被排氣。從而，基板洗淨裝置可不損傷 基板，而充分去除附著於基板背面之異物。 【實施方式】 以下，參考圖示說明本發明之實施方式。 首先詳細說明本發明之第1實施方式中，做爲基板洗 淨裝置之電漿處理裝置。 第1圖中，做爲對晶圓W施加蝕刻處理之蝕刻處理 裝置而構成的電漿處理裝置1’係具有金屬製，例如鋁或 不銹鋼製的圓筒型室（收容室）10;該室10內’配置有 做爲放置晶圓 w之平台的’圓柱狀感受器（放置台） 11- 室]〇之側壁和感受器1】之間，形成有做爲將感受器 11上方之氣體’排出至室】0之外之通路’而工作的排氣 通路12。此排氣通路12 ’中途配置有環狀的緩衝板13; 排氣通路12中比緩衝板13更下游之空間’係連通於可變 式蝴蝶閥，亦即自動壓力控制閥（Automatic Pressure control valve)(以下稱爲「APC」）14°APC14’ 係連 接於真空吸引用排氣栗’亦即渦輪分子泵（以下稱'爲 「TMP」）15，更且經由TMP15連接於乾泵（以下稱爲 -13 - (11)1374475In general, in a semiconductor device process, a semiconductor wafer (hereinafter referred to as a "wafer") to be processed is subjected to etching, sputtering, CVD (chemical vapor deposition), or the like, and plasma treatment is used. (hereinafter referred to as "plasma processing"). For example, the plasma processing apparatus 80 for applying a plasma treatment is provided with a cylindrical container 8 1 for accommodating a wafer as shown in Fig. 8; and disposed inside the cylindrical container 81 as a place for placing The susceptor 82 of the wafer placement stage; and the surface of the wafer placed on the wafer (hereinafter referred to as "placement surface"), the advancement needle 83 disposed through the susceptor 82. The susceptor 82 has an electrostatic chuck 85 on which an electrode connected to the DC power source 84 is disposed, and further has a lower electrode 87 connected to the high-frequency power source 86 (for example, refer to Patent Document 1) = plasma processing apparatus 80 The electrostatic chuck 85 adsorbs the wafer on the placement surface by electrostatic adsorption, and applies high-frequency electric power to the lower electrode 87 to generate a high-frequency electric field between the upper surface of the cylindrical container 81 and the susceptor 82. . The unslurry C electric ring η 1 is produced and the surrounding area is surrounded by the package and the body is surrounded by the gas. The crystal is in the built-in 1 with 8 sets of the device. The shape of the pulp tube is rounded into the production guide (2) (2) 1374475) is bundled on the surface of the wafer to etch an oxide film formed on the surface of the wafer. Further, the wafer to which the etching treatment is applied is lifted from the placement surface by the advancement needle 83, and is introduced from the cylinder by a conveyance device (not shown) such as a Scalar arm that enters the cylindrical container 81. The device 81 is carried out. In the plasma generated in the plasma treatment, if it is not bundled on the surface of the wafer, the inner wall of the cylindrical container 81 is washed to generate fine particles. Further, a reaction product is generated in the etching treatment. These fine particles and reaction products are almost discharged from the cylindrical container 81 by an exhaust device (not shown), but a part of the particles or reaction products remaining in the cylindrical container 81 are deposited. surface. Further, the particles of the susceptor 82 due to electricity or the like are also deposited on the placement surface. These particles or reaction products deposited on the placement surface become foreign matter and adhere to the back surface of the wafer when the wafer is placed on the placement surface. As a method of removing such particles or reaction products adhering to the back surface of the wafer, wet cleaning using a cleaning liquid or the like is known. Moreover, as a method of not using the cleaning liquid, it is also known to generate a plasma between the wafer lifted by the advancement needle and the placement surface, by the ion shovel action of the generated plasma, or The chemical reaction of free ions, and the removal method of the wafer back side is removed (for example, refer to Patent Document 2). [Patent Document 1] Japanese Patent Laid-Open No. Hei 5-226291 (Patent 1) [Patent Document 2] U.S. Patent No. 4,962,049 (column 2, line 67 to column 3, line 17) [Invention] Problem to be solved (3) (3) 1374475 However, after the wafer is repeatedly washed, the cleaning solution is contaminated. Therefore, there is a problem that the surface of the wafer is contaminated by particles or the like contained in the contaminated cleaning liquid during wafer cleaning. Further, when the wafer to be etched is applied, when the chamber of the project is carried in, or the like, the unremoved particles contaminate the interior of the chamber. Moreover, when the particles on the back side of the wafer are removed by plasma, the generated plasma may be subjected to excessive plasma treatment on the flat surface of the wafer to damage the wafer; for example, excessive wafer processing is applied to the surface of the wafer to generate Problem of Over-etching>> It is an object of the present invention to provide a substrate cleaning apparatus which can sufficiently remove foreign matter adhering to the back surface of a substrate without damaging the substrate. Means for Solving the Problem In order to achieve the above object, a substrate cleaning apparatus according to the first aspect of the invention is characterized in that: a storage chamber for accommodating a substrate; and a placement table disposed in the storage chamber to place the substrate; and An electrode that adsorbs the substrate to the placement stage by applying a voltage to the placement stage; and an exhaust device that exhausts the storage chamber; and separating the placement stage and the substrate 'to position the substrate and the substrate a separating device for generating a space; and a gas supply device for supplying a gas to the space; when a space is generated, a voltage is applied to the electrode, the gas supply device supplies a gas to the space, and the exhaust device receives the gas Indoor exhaust. The substrate cleaning device according to the second aspect of the invention is characterized in that the substrate cleaning device according to the invention is characterized in that the -6 - (4) (4) 1374475 is provided in the storage chamber. When the space is generated under reduced pressure, the gas is introduced into the gas introduction portion in the storage chamber. The substrate cleaning apparatus according to the first aspect or the second aspect of the invention is characterized in that the electrode is discontinuously applied with a voltage. The substrate cleaning device according to the fourth aspect of the invention is the substrate cleaning device according to the third aspect of the invention, wherein the electrodes are alternately applied with voltages having different polarities. The substrate cleaning apparatus according to the invention of claim 4, wherein the substrate is in a range of 5 Ο Ο V or more. The substrate cleaning device according to the invention of claim 5, wherein the substrate is in a range of 2 kV or more. The substrate cleaning device according to any one of claims 1 to 6, wherein the venting device is in the space when the space is generated. The pressure in the above-mentioned storage room is maintained at 133 Pa or more. The substrate cleaning device according to claim 7 is the substrate cleaning device according to the seventh aspect of the invention, wherein the exhaust device maintains the pressure in the storage chamber when the space is generated. In the range of 1.33χ1〇3~1.33x]04Pa. In order to achieve the above object, a substrate cleaning apparatus according to claim 9 is characterized in that: a storage chamber for accommodating a substrate; and a placement table disposed in the storage chamber of (5) (5) 1374475 to place the substrate; And an exhaust device that exhausts the storage chamber; and a separation device that separates the placement table and the substrate to create a space between the placement table and the substrate, and simultaneously contacts the substrate and applies a voltage to the substrate; a gas supply device that supplies a gas to the space; and a gas introduction portion that introduces a gas into the storage chamber; when the space is generated, a voltage is applied to the electrode, the gas supply device supplies a gas to the space, and the exhaust device When the inside of the storage chamber is further decompressed and the space is generated in the storage chamber, the gas introduction unit introduces gas into the storage chamber. In order to achieve the above object, a substrate cleaning method according to claim 10 is a substrate cleaning method for removing foreign matter adhering to a back surface of a substrate, and a method for storing a substrate in a storage chamber; and a substrate, a placing step of being placed on the placing table disposed in the receiving chamber; and a separating step of separating the placing table and the substrate by creating a space between the placing table and the substrate; and when the space is generated a voltage application step of applying a voltage to the electrodes of the placement stage; and a gas supply step of supplying a gas to the space when the space is generated; and an exhausting step of exhausting the storage chamber when the space is generated. The substrate cleaning method according to the first aspect of the invention, wherein the substrate cleaning method according to the first aspect of the invention is characterized in that the space is reduced in the storage chamber and the space is generated. The gas introduction step of introducing a gas into the storage chamber. The method for cleaning a substrate according to the first aspect of the invention, wherein the method of cleaning a substrate according to the first or second aspect of the invention is characterized in that: In the voltage application step described above, a voltage is applied to the electrodes discontinuously. The substrate cleaning method according to claim 12, wherein the voltage application step is to apply a voltage having a different polarity to the electrodes. By. In order to achieve the above object, a substrate cleaning method according to claim 14 is a substrate cleaning method for removing foreign matter adhering to a back surface of a substrate, and a method of accommodating the substrate in a storage chamber; and a substrate, a placing step of being placed on the placing table disposed in the receiving chamber; and a separating step of separating the placing table and the substrate by creating a space between the placing table and the substrate; and when the space is generated, a voltage application step of applying a voltage to the substrate; and a gas supply step of supplying a gas to the space when the space is generated; and an exhausting step of exhausting the storage chamber when the space is generated; and when the storage chamber is When the space is reduced and the space is generated, a gas introduction step of introducing a gas into the storage chamber is performed. According to the substrate cleaning device of the first aspect of the invention, when a space is generated between the placing table and the substrate, an electric field is generated in the space due to a voltage applied to the electrode disposed on the placing table. An electrostatic force acts on the back side of the substrate. As a result, the foreign matter attached to the back of the substrate will be off -9- (7) (7) 1374475. Further, when the space is generated, since the air is supplied to the space and the inside of the storage room is exhausted, an air flow is generated in the space, and the foreign matter which is separated by the air flow is removed from the space, and is exhausted from the storage chamber. Therefore, the substrate cleaning device can sufficiently remove foreign matter adhering to the back surface of the substrate without damaging the substrate. According to the substrate cleaning device described in the second paragraph of the patent application, when the inside of the storage chamber is depressurized, the gas is introduced into the storage chamber, so that a traveling shock wave is generated in the receiving chamber, and the shock wave is attached to the back surface of the substrate. The foreign matter is separated into the space. Therefore, the substrate cleaning device can sufficiently remove foreign matter adhering to the back surface of the substrate without damaging the substrate. According to the substrate cleaning apparatus described in the third aspect of the patent application, since the voltage is not continuously applied to the electrodes, the voltage application to the electrodes is repeated. Accordingly, the back surface of the substrate repeatedly acts on the static electricity. Therefore, the foreign matter adhering to the back surface of the substrate can be sufficiently removed. According to the substrate cleaning apparatus described in the fourth aspect of the patent application, since the voltages of different polarities are alternately applied, the substrate can be prevented from being charged. When the substrate is charged, the electrostatic force acting on the back surface of the substrate by applying a voltage becomes small. Therefore, by preventing the substrate from being charged, it is possible to prevent the removal efficiency of the foreign matter adhering to the back surface of the substrate from being lowered. According to the substrate cleaning device described in claim 5, when the space is generated, the voltage applied to the electrode is 500 V or more, so that the electrostatic force acting on the back surface of the substrate can be increased, and the electrostatic force can be surely performed. The detachment of foreign bodies. According to the substrate cleaning apparatus described in the sixth paragraph of the patent application, since the voltage of -10-(8) (8) 1374475 is 2 kV or more, the electrostatic force can be increased. According to the substrate cleaning apparatus of the seventh aspect of the invention, since the pressure of the storage chamber is maintained at 133 Pa or more by the exhaust device, a resistance flow having a large gas flow resistance can be generated in the space. The foreign matter detached from the back surface of the substrate is caught in the resistance flow and is exhausted from the storage chamber together with the gas in the storage chamber. Thereby, the foreign matter adhering to the back surface of the substrate can be surely removed. According to the substrate cleaning apparatus described in the eighth aspect of the patent application, since the exhaust device maintains the pressure in the storage chamber in the range of 1.33×103 to 1.33 χ 104 Pa, the resistance flow can be surely generated in the space. According to the substrate cleaning device of the ninth aspect of the patent application, when a space is generated between the placing table and the substrate, a voltage is applied to the electrodes disposed on the placing table, so an electrostatic field is generated in the space, and the substrate is generated. The back side acts as an electrostatic force. As a result, foreign matter adhering to the back surface of the substrate is separated. Further, when a space is generated and the inside of the storage chamber is decompressed, since the gas is introduced into the storage chamber, a traveling shock wave is generated in the storage chamber, and the foreign matter adhering to the back surface of the substrate is released into the space by the shock wave. Further, when the space is generated, "the gas is supplied to the space, and the inside of the storage chamber is exhausted. Therefore, an air flow is generated in the space, and the foreign matter that has been removed by the air flow is discharged from the space, and is exhausted from the storage chamber. Therefore, the substrate cleaning device can sufficiently remove the foreign matter adhering to the back surface of the substrate without damaging the substrate. According to the substrate cleaning method described in the first aspect of the patent application, when a space is generated between the placing table and the substrate, "the voltage is applied to the electrodes disposed on the placing table," an electrostatic field is generated in the space. An electrostatic force acts on the back side of the substrate. As a result, the foreign matter attached to the back of the substrate will be -11 - (9) (9) 1374475. Further, when the space is generated, since the air is supplied to the space and the inside of the room is exhausted, an air flow is generated in the space, and the foreign matter which is separated by the air flow is removed from the space and is exhausted from the storage chamber. Therefore, the substrate cleaning device can sufficiently remove foreign matter adhering to the back surface of the substrate without damaging the substrate. According to the substrate cleaning method described in claim 11, when a space is generated and the inside of the storage chamber is decompressed, since the gas is introduced into the storage chamber, a traveling shock wave is generated in the storage chamber, and the shock wave is attached to the substrate. The foreign matter on the back is released into the space. Therefore, the substrate cleaning device can sufficiently remove foreign matter adhering to the back surface of the substrate without damaging the substrate. According to the substrate cleaning method described in the fifteenth aspect of the patent application, the application of a voltage to the electrodes is discontinuous, so that the voltage application to the electrodes is repeated. Accordingly, the back surface of the substrate repeatedly acts on the static electricity. Therefore, the foreign matter adhering to the back surface of the substrate can be sufficiently removed. According to the substrate cleaning method described in Item 13 of the patent application, since voltages having different polarities are alternately applied, the substrate can be prevented from being charged. If the substrate is charged, the electrostatic force acting on the back surface of the substrate by applying a voltage becomes small. Therefore, by preventing the substrate from being charged, it is possible to prevent the removal efficiency of the foreign matter adhering to the back surface of the substrate from being lowered. According to the substrate cleaning method described in claim 14 of the patent application, when a space is generated between the placing table and the substrate, since a voltage is applied to the electrodes disposed on the placing table, an electrostatic field is generated in the space. An electrostatic force acts on the back side of the substrate. As a result, foreign matter adhering to the back surface of the substrate is detached. Furthermore, when the space is generated and the inside of the storage chamber is decompressed, the gas -12 - (10) (10) 1374475 is introduced into the storage chamber, so that a traveling shock wave is generated in the storage chamber, and the foreign matter attached to the back surface of the substrate is generated by the shock wave. Get out of the space. Further, when the space is generated, since the air is supplied to the space and the inside of the storage room is exhausted, an air flow is generated in the space, and the foreign matter which is separated by the air flow is discharged from the space and is exhausted from the storage chamber. Therefore, the substrate cleaning device can sufficiently remove foreign matter adhering to the back surface of the substrate without damaging the substrate. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. First, a plasma processing apparatus as a substrate cleaning apparatus in the first embodiment of the present invention will be described in detail. In the first embodiment, the plasma processing apparatus 1' configured as an etching treatment apparatus for applying an etching treatment to the wafer W is made of a metal, for example, a cylindrical chamber (accommodation chamber) 10 made of aluminum or stainless steel; 10' is arranged as a 'cylindrical susceptor (placement table) 11-room] as a platform for placing the wafer w. Between the side wall of the 〇 and the susceptor 1 is formed as a discharge of the gas above the susceptor 11 to the chamber An exhaust passage 12 that operates as a passage other than 0. An annular buffer plate 13 is disposed in the middle of the exhaust passage 12'; a space downstream of the buffer passage 13 in the exhaust passage 12 is connected to a variable butterfly valve, that is, an automatic pressure control valve (Automatic Pressure Control Valve) (hereinafter referred to as "APC") 14°APC14' is connected to a vacuum suction exhaust pump, that is, a turbo molecular pump (hereinafter referred to as 'TMP') 15 and is connected to a dry pump via TMP15 (hereinafter referred to as For -13 - (11) 1374475

「DP」）16。以下雖將 APC14、TMP15 及 DP16 戶 排氣通路’稱爲「本排氣線路」，但此本排氣線g 是藉由APC14來進行室1〇內的壓力控制，亦藉注 及DP 16將室1〇內減壓至幾乎成爲真空狀態。 又’上述排氣通路12中比緩衝板13更下游；^ 連接有與本排氣線路不同的排氣通路（以下稱爲i 路」）（排氣裝置）。此吸引線路，係連通於上切 DP16;具備直徑例如爲25mm之排氣管]7，和画 氣管17之中圖的閥V2。此閥V2，可切斷上迸 DP16。吸引線路係藉由DP16，排出室10內的氣體 感受器Π，係經由整合器1 9，而電性連接， 生用之高頻電源18。此高頻電源18，係將特定之 例如13.56MHz之高頻電力，施加於感受器II。任 受器1 1會工作爲下部電極。 感受器U之內部上方，設置有爲了以靜電® 吸附晶圓W的，導電膜構成之圓板狀電極板20。 2 0，係電性連接於直流電源2 2。 晶圓W，係藉由自電源2 2施加於電極板2 0 壓所產生的庫倫力，或是 Johnson-Rahbek力，而 保存於感受器11的上面。又’砂（Si)等所構成 狀聚焦環24，係使產生於感受器】1之上方的電獎 晶圓W集束。 又，感受器1 1之內部’例如設置有延伸於圓 的，環狀的冷媒室2 5。此冷媒室2 5中’係經由配 ί構成之 系並不只 ΤΜΡ 1 5 :空間， 吸引線 [空間和 ί置於排 空間和 • 〇 _電漿產 .局頻5 i此，感 :附力來 電極板 .直流電 被吸附 ,之圓環 ，向著 周方向 管26， -14 - (12) (12)1374475 自冷卻單元（未圖示）被供給有特定溫度之冷媒，例如冷 卻水；以該冷媒之溫度，來控制感受器1 ]上晶圓W之處 理溫度》 感受器11 .上面吸附晶圓W之部分，開孔有複數導熱 氣體供給孔（氣體供給裝置）27。此等導熱氣體供給孔 27，係經由配置於感受器11內部之導熱氣體供給線路 28，連通於具有閥V3之導熱氣體供給管29，自連接於導 熱氣體供給管29之導熱氣體供給部（未圖示），將導熱 氣體例如He氣體，供給至感受器1 1之上面和晶圓W之 背面之間的間隙。依此，可提高晶圓W和感受器1 1之熱 傳導性。另外閥V3，可切斷導熱氣體供給孔27和導熱氣 體供給部。 又，感受器11上面吸附晶圓W之部分，做爲自感受 器 Π之上面自由突出的支撐針，係設置有複數推進針 (分離裝置）3 0。此等推進針3 0，係藉由以球螺桿等將 馬達（未圖示）之旋轉運動改變爲直線運動，而移動於圖 中之上下方向。晶圓 W被吸附保存於感受器11之上面 時，推進針30是被收容於感受器11 ;而施加鈾刻處理也 就是電漿處理結束之後的晶圓W，自室10被搬出時，推 進針30會自感受器11上面突出，使晶圓W自感受器11 分離而往上方抬起。此時，感受器Π之上面和晶圓W之 背面之間，形成有空間S。 室]〇之側壁，裝設有開關晶圓W之搬入搬出口 3 1 的閘閥3 2。又，室1 0之天花板部，配置有蓮蓬頭3 3來 -15 - (13) (13)1374475 做爲接地電位的上部電極。依此，來自高頻電源18之高 頻電源，會被施加於感受器11和蓮蓬頭33之間。 天花板部之蓮蓬頭33，係包含具有多數氣體通氣孔 之下面的電極板35，和可裝卸地支撐該電極板35的電極 支撐體36。又，該電極支撐體36之內部設置有緩衝室 37，此緩衝室37連接有來自處理氣體供給部（未圖示） 的處理氣體導入管38。此處理氣體導入管38，中途設置 有閥 VI。此閥VI，可切斷緩衝室37和處理氣體供給 部。又，室10之周圍，配置有延伸爲環狀或同心圓狀的 磁鐵3 9。 此電漿處理裝置1之室10內，藉由磁鐵39而形成向 著單一方向的水平磁場，同時藉由施加於感受器Π和蓮 蓬頭33之間之高頻電壓，而形成垂直方向的RF電場； 依此，室1〇內會經由處理氣體進行磁控管放電，而自感 受器Π之表面附近的處理氣體產生高密度電漿。 此電漿處理裝置1中，在蝕刻處理時，先使閘閥3 2 爲開狀態將加工對象的晶圓W搬入室1 0內，而放置於感 受器1 1上。然後藉由蓮蓬頭3 3，以特定之流量及流量比 將處理氣體（例如特定流量比率之C4F8氣體、〇2氣體及 Ar氣體所構成的混合氣體）導入室10內，再藉由APCI4 等將室10內之壓力做爲特定値。更且，藉由高頻電源18 對感受器Π供給高頻電力，藉由直流電源2 2對電極板 2 0施加直流電壓，而將晶圓W吸附於感受器1 1上。然 後，被蓮蓬頭33吐出之處理氣體會如上述搬被電漿化° -16- (14) 1374475 以此電漿所產生之自由基或離子，會被聚焦環24集束於 晶圓W之表面，而蝕刻晶圓W之表面。 上述之電漿處理裝置1中，被產生的電漿裡沒有被集 束至晶圓W表面者，會衝撞室10之內壁等而產生微粒。 .所產生之微粒中，沒有被本排氣線路和吸引線路所排出的 微粒，會堆積於感受器Π上。此堆積於上面的微粒，當 晶圓W被放置於感受器11上面時，會成爲異物而附著於 B 晶圓w之背面。對此，電漿處理裝置]在對晶圓W施加 蝕刻處理後，以推進針30將將圓W自感受器11上面分 離，而產生空間S時，係對電極板20施加高電壓，自導 熱氣體供給孔2 7對空間S供給N2氣體等，而室I 〇內藉 由吸引線路被排氣。更且，室I 〇內以吸引線路減壓的期 間，會自蓮蓬頭33對室10內導入處理氣體。依此，附著 於晶圓 W背面之微粒會被排除。以下，說明電漿處理裝 置1中所執行，排除附著於晶圓W背面之微粒的基板洗 φ 淨方法。 第2圖，係第1圖之電漿處理裝置中所執行之基板洗 淨處理的程序圖。此基板洗淨處理，係對晶圓W施加蝕 刻處理後執行。 第2圖中’執行本處理之先決條件，係晶圓W被施 加有蝕刻處理，且依然放置在感受器11上面，電極板20 尙未被施加電壓（HV0) ，APC】4打開（Apc OPEN)且 Τ Μ P15在動作’也就是室10內以本排氣線路來減壓（真 空吸引），而閥 VI ~V 3圍全部關閉（V] CLOSE、V2 -17 - (15) (15)1374475 CLOSE、V3 CLOSE)的狀態。 首先，被收容於感受器11 (PIN DOWN)之推進針 30 ’會將晶圓 W自感受器11分離而抬往上方（PIN UP )。此時推進針30將晶圓W自感受器11抬起的高 度’雖沒有特別限制，但以10~20mm爲佳。依此，感受 器11之上面和晶圓w之背面之間會形成空間s。 接著關閉APC14(APC CLOSE)，打開排氣管17之 閥 V2及導熱氣體供給管 29之閥 V3 ( V2 OPEN、V3 OPEN)，導熱氣體供給孔27向著被抬起之晶圓W之背 面’對空間S噴出N2氣體，而吸引線路則將對空間S噴 出之N2氣體，和殘存於是1〇內的氣體一同向外排出。依 此’空間S中會產生自晶圓W背面向著感受器〗1之外周 部流動，氣體流阻力較大的阻力流。此時，若室10內是 在特定壓力以上，因爲容易產生阻力流，故吸引線路會使 室10內之壓力不低於例如133Pa ( 1 torr )地，理想上則 是使室10內之壓力爲持在特定壓力範圍，例如維持在 β 1.33xl〇3〜1.33x]〇4Pa(10〜100 torr)的範圍地，排出室 1〇內之N2氣體等。依此，可在空間S中確實產生阻力 流。阻力流會捲入後述自晶圓W之背面脫離的微粒，而 與室1〇內之氣體一同自室10被排出。 接著’直流電源22會對電極板20交互施加極性不同 之高電壓，例如+500V和-500V的電壓（HV +500V、 HV -500V)。此時，對電極板20施加高電壓造成室1〇 內’尤其在空間S產生靜電場，而於晶圓W之背面會作 -18 - (16) (16)1374475 用有靜電性作用力，例如馬克斯威爾（Maxwell)作用 力。依此，附著於晶圓W背面之微粒的附著力會變弱， 而該微粒會脫落。上述靜電性作用力，在對電極板20之 高電壓施加時和停止時，會有效的作用於晶圓W背面。 在此，電漿處理裝置1中因反覆進行對電極板20之高電 壓施加，故可有效的於晶圓W背面反覆作用有靜電性作 用力。從而，可充分去除附著於晶圓W背面之微粒。 對電極板20交互施加之電壓的絕對値，是較大者爲 佳；例如500V以上，而2kV以上較理想。依此，可增大 作用於晶圓W背面之靜電性作用力，而可確實進行微粒 之脫離。 又，若對電極板2 0反覆施加相同極性之高電壓，電 極板2 0會帶電（充電）結果會減少作用於晶圓W背面之 靜電性作用力，而有降低附著於晶圓W背面之微粒之去 除效率的情況。電漿處理裝置1中，因對電極板20交互 施加極性不同之高電壓，故電極板20不會帶電，而可防 止降低附著於晶圓W背面之微粒的去除效率。 另外如上所述，上述靜電性作用力的有效功用，有關 於對電極板2 0之高電壓施加次數，而不太關於對電極板 20之高電壓施加時間。從而，對電極板20之高電壓施加 時間只要是例如1秒以下即可6 上述中對電極板20交互施加極性不同之高電壓的期 間，處理氣體導入管38會打開閥V】（VI OPEN)，而自 蓮蓬頭3 3取代處理氣體的，將例如N2氣體導入室】0 -19 - (17) (17)1374475 內。此時，因室〗〇內被吸引線路減壓，故蓮蓬頭33之正 下方會產生急速的壓力上升；依此，被導入之N2氣體會 產生行進衝擊波，被產生的行進衝擊波會到達被抬起之晶 圓W。結果，晶圓W被施加衝擊力，使附著於晶圓W背 面之微粒脫離。此時，已脫離之微粒亦藉由上述阻力流， 自室1 0向外排出。 另外，電漿處理裝置1中，爲了在N2氣體導入時有 效進行室10內蓮蓬頭3 3正下方的壓力上升，在處理氣體 導入管38中較閥VI更下游，係不設置孔口（ Orifice ) 構造，例如不設置流量控制裝置（流量控制器）或降速閥 者爲佳。 然後，處理氣體導入管38之閥 VI維持打開（VI OPEN )，對電極板20之交互施加極性不同之高電壓的次 數，例如於圖中進行4次以後，關閉處理氣體導入管3 8 之閥 VI (VI CLOSE )，打開 APC14(APC OPEN )，同 時關閉排氣管17之閥V2及導熱氣體供給管29之.閥V3 (V2 CLOSE ' V3 CLOSE )，而結束本處理。 施加了上述基板洗淨處理之晶圓W，會經由搬入搬出 口 31自室]0被搬出，而被搬入搬運室例如取放室 (Load-Lock );但因附著於晶圓W背面之微粒已經充分 被去除，故取放室內不會被微粒污染。 若依上述之基板洗淨方法，當感受器1]及晶圓W之 間產生空間S時，因對電極板20交互施加極性不同之高 電壓，故空間S中會產生靜電場，而於晶圓w之背面作 -20- (18)1374475 用有靜電性作用力；更且，當空間S產生且以吸引線路將 室10內減壓時，因將N2氣體導入室10內，故室10內會 產生行進衝擊波，以被產生之行進衝擊波對晶圓W施加 衝擊力。依此’附著於晶圓W背面之微粒會脫離至空間 S。從而，微粒脫離並不需要電漿離子之濺鍍，或是自由 基之化學反應，而不會損傷晶圓W。"DP") 16. In the following, the APC14, TMP15 and DP16 household exhaust passages are referred to as "this exhaust line". However, the exhaust line g is used for pressure control in the chamber 1 by the APC 14, and the borrowing and DP 16 will be used. The chamber was depressurized to a nearly vacuum state. Further, the exhaust passage 12 is further downstream than the buffer plate 13; and an exhaust passage (hereinafter referred to as an "i-channel") (exhaust means) different from the present exhaust passage is connected. The suction line is connected to the upper cut DP16; the exhaust pipe 7 having a diameter of, for example, 25 mm, and the valve V2 shown in the middle of the air tube 17. This valve V2 cuts off the upper DP16. The attracting line is electrically connected to the gas susceptor 排出 in the discharge chamber 10 via the DP 16, and is electrically connected to the high-frequency power source 18 for use. This high-frequency power source 18 applies a specific high-frequency power such as 13.56 MHz to the susceptor II. The receiver 1 1 will operate as the lower electrode. Above the inside of the susceptor U, a disk-shaped electrode plate 20 made of a conductive film for adsorbing the wafer W by static electricity is provided. 2 0, is electrically connected to the DC power supply 2 2 . The wafer W is stored on the top of the susceptor 11 by a Coulomb force generated by a voltage applied from the power source 2 to the electrode plate 20 or a Johnson-Rahbek force. Further, the focus ring 24, which is formed of sand (Si) or the like, bundles the lottery wafer W generated above the susceptor 1 . Further, the inside of the susceptor 1 is provided, for example, with a circular refrigerant chamber 25 extending in a circle. This refrigerant chamber 25 is made up of a system that is not only ΤΜΡ 1 5 : space, suction line [space and ί placed in the row space and • 〇 _ plasma production. Local frequency 5 i this, feeling: attached force Electrode plate. The direct current is adsorbed, and the ring is directed toward the circumferential direction tube 26, -14 - (12) (12) 1374475. A self-cooling unit (not shown) is supplied with a refrigerant of a specific temperature, such as cooling water; The temperature of the refrigerant is used to control the processing temperature of the wafer 1 on the susceptor 1]. The susceptor 11 is a portion on which the wafer W is adsorbed, and the opening has a plurality of heat-transfer gas supply holes (gas supply means) 27. The heat transfer gas supply holes 27 are connected to the heat transfer gas supply pipe 29 having the valve V3 via the heat transfer gas supply line 28 disposed inside the susceptor 11, and are connected to the heat transfer gas supply unit of the heat transfer gas supply pipe 29 (not shown). Shown, a heat conductive gas such as He gas is supplied to the gap between the upper surface of the susceptor 1 1 and the back surface of the wafer W. Accordingly, the thermal conductivity of the wafer W and the susceptor 1 can be improved. Further, the valve V3 can cut off the heat transfer gas supply hole 27 and the heat transfer gas supply portion. Further, a portion of the susceptor 11 on which the wafer W is adsorbed is provided as a support needle which is freely protruded from the upper surface of the susceptor, and a plurality of pusher needles (separating means) 30 are provided. These advancement needles 30 are moved to the upper and lower directions in the drawing by changing the rotational motion of the motor (not shown) into a linear motion by a ball screw or the like. When the wafer W is adsorbed and stored on the susceptor 11, the pusher needle 30 is housed in the susceptor 11; and the uranium engraving process is performed, that is, the wafer W after the plasma treatment is completed, and when the chamber 10 is carried out, the pusher 30 is pushed. The upper surface of the susceptor 11 protrudes, and the wafer W is separated from the susceptor 11 and lifted upward. At this time, a space S is formed between the upper surface of the susceptor and the back surface of the wafer W. The side wall of the chamber is provided with a gate valve 32 for the loading and unloading port 3 of the switch wafer W. Further, the ceiling portion of the chamber 10 is provided with a shower head 3 3 to -15 - (13) (13) 1374475 as an upper electrode of a ground potential. Accordingly, a high frequency power source from the high frequency power source 18 is applied between the susceptor 11 and the shower head 33. The ceiling portion 33 of the ceiling portion includes an electrode plate 35 having a lower surface of a plurality of gas vent holes, and an electrode support member 36 detachably supporting the electrode plate 35. Further, a buffer chamber 37 is provided inside the electrode support 36, and a processing gas introduction pipe 38 from a processing gas supply unit (not shown) is connected to the buffer chamber 37. This processing gas introduction pipe 38 is provided with a valve VI in the middle. This valve VI cuts off the buffer chamber 37 and the process gas supply portion. Further, around the chamber 10, a magnet 39 extending in a ring shape or a concentric shape is disposed. In the chamber 10 of the plasma processing apparatus 1, a horizontal magnetic field toward a single direction is formed by the magnet 39, and a vertical electric field is formed by a high frequency voltage applied between the susceptor and the shower head 33; Thus, the magnetron discharge is performed in the chamber 1 via the process gas, and the process gas near the surface of the susceptor crucible produces a high-density plasma. In the plasma processing apparatus 1, at the time of the etching process, the wafer W to be processed is placed in the chamber 10 while the gate valve 3 2 is opened, and placed on the sensor 1 1 . Then, the processing gas (for example, a mixed gas of a specific flow rate ratio of C4F8 gas, 〇2 gas, and Ar gas) is introduced into the chamber 10 by the shower head 3 3 at a specific flow rate and flow ratio, and then the chamber is passed by APCI4 or the like. The pressure within 10 is treated as a specific flaw. Further, high-frequency power is supplied to the susceptor 高频 by the high-frequency power source 18, and a DC voltage is applied to the electrode plate 20 by the DC power source 2, whereby the wafer W is adsorbed on the susceptor 11. Then, the processing gas discharged by the shower head 33 is plasma-like as described above. The radicals or ions generated by the plasma are bundled on the surface of the wafer W by the focus ring 24, The surface of the wafer W is etched. In the plasma processing apparatus 1 described above, if the generated plasma is not concentrated on the surface of the wafer W, the inner wall of the chamber 10 or the like is generated to generate fine particles. Among the particles generated, particles that are not discharged by the exhaust line and the suction line are deposited on the susceptor. The particles deposited on the upper surface become foreign matter and adhere to the back surface of the B wafer w when the wafer W is placed on the susceptor 11. In this case, after the etching treatment is applied to the wafer W, the round needle W is separated from the upper surface of the susceptor 11 by the advancement needle 30, and when the space S is generated, a high voltage is applied to the electrode plate 20, and the self-heating gas is applied. The supply hole 27 supplies N2 gas or the like to the space S, and the chamber I 〇 is exhausted by the suction line. Further, during the period in which the suction line is depressurized in the chamber I, the processing gas is introduced into the chamber 10 from the shower head 33. Accordingly, particles adhering to the back surface of the wafer W are excluded. Hereinafter, a method of cleaning the substrate which is performed in the plasma processing apparatus 1 and excluding the particles adhering to the back surface of the wafer W will be described. Fig. 2 is a flow chart showing the substrate cleaning process performed in the plasma processing apparatus of Fig. 1. This substrate cleaning process is performed after the etching process is applied to the wafer W. In Fig. 2, 'the precondition for performing this process is that the wafer W is applied with an etching process and is still placed on the susceptor 11, and the electrode plate 20 is not applied with a voltage (HV0), APC] 4 is turned on (Apc OPEN). And Τ Μ P15 decompresses (vacuum suction) with the exhaust line in the operation ', ie, the valve VI ~ V 3 is closed (V] CLOSE, V2 -17 - (15) (15) 1374475 The status of CLOSE, V3 CLOSE). First, the advancement needle 30' accommodated in the susceptor 11 (PIN DOWN) separates the wafer W from the susceptor 11 and lifts it upward (PIN UP). At this time, although the height at which the advancement needle 30 lifts the wafer W from the susceptor 11 is not particularly limited, it is preferably 10 to 20 mm. Accordingly, a space s is formed between the upper surface of the susceptor 11 and the back surface of the wafer w. Then, the APC 14 (APC CLOSE) is closed, and the valve V2 of the exhaust pipe 17 and the valve V3 (V2 OPEN, V3 OPEN) of the heat transfer gas supply pipe 29 are opened, and the heat transfer gas supply hole 27 faces the back side of the wafer W being lifted. The space S ejects the N2 gas, and the suction line discharges the N2 gas ejected from the space S together with the gas remaining in the crucible. Accordingly, in the space S, a resistance flow from the back surface of the wafer W toward the periphery of the susceptor 1 and a large gas flow resistance is generated. At this time, if the inside of the chamber 10 is above a certain pressure, since the resistance flow is likely to occur, the suction line causes the pressure in the chamber 10 to be not lower than, for example, 133 Pa (1 to rr), and ideally, the pressure in the chamber 10. The N2 gas or the like in the chamber 1 is discharged in a range of a specific pressure range, for example, maintained at a range of β 1.33xl〇3 to 1.33x]〇4Pa (10 to 100 torr). Accordingly, a resistance flow can be surely generated in the space S. The resistance flow is entangled with particles which are detached from the back surface of the wafer W described later, and is discharged from the chamber 10 together with the gas in the chamber 1〇. Then, the DC power source 22 alternately applies a high voltage having a different polarity to the electrode plate 20, for example, voltages of +500 V and -500 V (HV + 500 V, HV - 500 V). At this time, applying a high voltage to the electrode plate 20 causes an electrostatic field to be generated in the chamber 1 尤其, especially in the space S, and -18 - (16) (16) 1374475 on the back surface of the wafer W with an electrostatic force, For example, Maxwell's force. As a result, the adhesion of the particles attached to the back surface of the wafer W is weakened, and the particles are detached. The electrostatic force acts on the back surface of the wafer W when the high voltage of the electrode plate 20 is applied and stopped. Here, in the plasma processing apparatus 1, since the high voltage application of the counter electrode plate 20 is repeatedly performed, it is possible to effectively exert an electrostatic action on the back surface of the wafer W. Thereby, the particles adhering to the back surface of the wafer W can be sufficiently removed. The absolute enthalpy of the voltage applied to the electrode plates 20 alternately is preferably larger; for example, 500 V or more, and more preferably 2 kV or more. Accordingly, the electrostatic force acting on the back surface of the wafer W can be increased, and the detachment of the particles can be surely performed. Further, if a high voltage of the same polarity is applied to the electrode plate 20, the electrode plate 20 is charged (charged), and the electrostatic force acting on the back surface of the wafer W is reduced, and the adhesion to the back surface of the wafer W is lowered. The case of particle removal efficiency. In the plasma processing apparatus 1, since the electrode plate 20 is alternately applied with a high voltage having a different polarity, the electrode plate 20 is not charged, and the removal efficiency of the particles adhering to the back surface of the wafer W can be prevented from being lowered. Further, as described above, the effective function of the above electrostatic force is related to the application of the high voltage to the electrode plate 20, and not to the application of the high voltage to the electrode plate 20. Therefore, the high voltage application time of the electrode plate 20 may be, for example, 1 second or less. 6 During the period in which the electrode plate 20 is alternately applied with a high voltage having a different polarity, the process gas introduction pipe 38 opens the valve V] (VI OPEN) Instead of replacing the processing gas from the shower head 3 3, for example, N2 gas is introduced into the chamber] 0 -19 - (17) (17) 1374475. At this time, since the suction line is decompressed in the chamber, the rapid pressure rise occurs immediately below the shower head 33. Accordingly, the introduced N2 gas generates a traveling shock wave, and the generated traveling shock wave arrives and is lifted. Wafer W. As a result, the wafer W is subjected to an impact force to detach the particles adhering to the back surface of the wafer W. At this time, the detached particles are also discharged from the chamber 10 by the above resistance flow. Further, in the plasma processing apparatus 1, in order to effectively increase the pressure immediately below the shower head 3 in the chamber 10 at the time of introduction of the N2 gas, the processing gas introduction pipe 38 is further downstream than the valve VI, and no orifice is provided. The configuration is preferably such that no flow control device (flow controller) or a deceleration valve is provided. Then, the valve VI of the process gas introduction pipe 38 is kept open (VI OPEN ), and the number of times the high voltage of different polarity is applied to the electrode plate 20 is exchanged, for example, after 4 times in the drawing, the valve of the process gas introduction pipe 38 is closed. VI (VI CLOSE ), the APC 14 (APC OPEN ) is turned on, and the valve V2 of the exhaust pipe 17 and the valve V3 (V2 CLOSE ' V3 CLOSE ) of the heat transfer gas supply pipe 29 are closed, and the process is terminated. The wafer W to which the substrate cleaning treatment is applied is carried out from the chamber 0 through the loading/unloading port 31, and is carried into the transfer chamber, for example, a load-lock chamber. However, since the particles attached to the back surface of the wafer W are already It is fully removed, so the room will not be contaminated by particles. According to the above substrate cleaning method, when a space S is generated between the susceptor 1] and the wafer W, since a high voltage of different polarity is applied to the electrode plate 20, an electrostatic field is generated in the space S, and the wafer is generated. The back side of w is -20-(18)1374475 with electrostatic force; moreover, when space S is generated and the chamber 10 is decompressed by the suction line, since N2 gas is introduced into the chamber 10, the chamber 10 is inside. A traveling shock wave is generated to apply an impact force to the wafer W by the generated traveling shock wave. Accordingly, the particles attached to the back surface of the wafer W are separated from the space S. Thus, the particle detachment does not require plasma ion sputtering or a free radical chemical reaction without damaging the wafer W.

又，上述空間S產生時，因爲會自導熱氣體供給孔 27對空間S噴出N2氣體，該被噴出至空間S之N2氣體 會由吸引線路而被排出至室10外，故空間S中會產生N2 氣體的阻力流。已脫離之微粒，會被捲入上述阻力流中， 而自空間S被排出至室1 0外。 從而，不會損傷晶圓W，而可充分去除附著於晶圓W 背面之微粒。 1Further, when the space S is generated, since the N2 gas is ejected from the heat transfer gas supply hole 27 to the space S, the N2 gas discharged into the space S is discharged to the outside of the chamber 10 by the suction line, so that the space S is generated. Resistance flow of N2 gas. The detached particles are entangled in the above resistance flow, and are discharged from the space S to the outside of the chamber 10. Therefore, the particles adhering to the back surface of the wafer W can be sufficiently removed without damaging the wafer W. 1

上述之電漿處理裝置1中，雖然是藉由吸引線路，不 使室10內之壓力低過特定壓力地排出室〗〇內之N2氣體 等，但亦可不使用吸引線路，藉由縮小APC14之開量， 不使室10內之壓力低過特定壓力地以本排氣線路排出室 10內之N2氣體等；依此，亦可於空間S產生阻力流。 又，本發明不僅是構成爲蝕刻處理裝置的電漿處理裝 置，亦可適用於其他電漿處理裝置，例如構成爲CVD裝 置或灰化裝置的電漿處理裝置。 其次，詳細說明本發明第2實施方式中，做爲基板洗 淨裝置之電漿處理裝置。 第2實施方式中，做爲基板洗淨裝置之電漿處理裝 -21 - (19)1374475In the plasma processing apparatus 1 described above, the N2 gas or the like in the chamber is not discharged by the suction line without lowering the pressure in the chamber 10 by a specific pressure, but the APC 14 may be reduced by not using the suction line. The opening amount is such that N2 gas or the like in the chamber 10 is discharged from the exhaust line without lowering the pressure in the chamber 10 by a specific pressure; accordingly, a resistance flow can be generated in the space S. Further, the present invention can be applied not only to a plasma processing apparatus which is an etching processing apparatus but also to another plasma processing apparatus, such as a plasma processing apparatus which is configured as a CVD apparatus or an ashing apparatus. Next, a plasma processing apparatus as a substrate cleaning apparatus in the second embodiment of the present invention will be described in detail. In the second embodiment, the plasma processing apparatus as the substrate cleaning device - 21 - (19) 1374475

置，係與第〗實施方式相同，在以推進針40將 感受器U上面分離，而產生空間S時，會產与 於晶圓w之背面作用有靜電性作用力；但與第 式不同的是，靜電場並非是對電極板20施加ϋ 起，而是由推進針40對晶圓W施加高電壓而引 第3圖，係表示第2實施方式中，做爲基衫 之電漿處理裝置，其推進針之槪略構成的圖。 第3圖中，推進針40係導電體所構成的有 於晶圓 W背面之一端成形爲半球狀，而另一铕 接於直流電源4 1。又，推進針40之表面，爲了 表面放電，最好以介電質等覆蓋之：但半球狀之 面，爲了對晶圓 W施加高電壓，其導電體係露 針 4 〇，係藉由以球螺桿等將馬達（未圖示）之 改變爲直線運動，而移動於圖中之上下方向。 又，複數推進針40是被配置在感受器11上 有晶圓W之部分。然後推進針4 0會自感受器 突起’將晶圓W自感受器11分離而抬往上方。 第1實施方式相同，感受器1 1上面和晶圓W背 形成空間S。In the same manner as in the first embodiment, when the susceptor U is separated by the advancement needle 40 to generate the space S, an electrostatic force is applied to the back surface of the wafer w; however, unlike the first embodiment, The electrostatic field is not applied to the electrode plate 20, but a high voltage is applied to the wafer W by the push pin 40. Referring to FIG. 3, the second embodiment is a plasma processing apparatus for the base shirt. A diagram of the structure of the needle that advances it. In Fig. 3, the push pin 40-type conductor is formed such that one end of the back surface of the wafer W is formed in a hemispherical shape, and the other end is connected to the DC power source 41. Further, the surface of the push pin 40 is preferably covered with a dielectric or the like for the surface discharge: the hemispherical surface, in order to apply a high voltage to the wafer W, the conductive system is exposed to the needle 4 by the ball. The screw or the like changes the motor (not shown) into a linear motion and moves in the upper and lower directions in the drawing. Further, the plurality of push pins 40 are disposed on the susceptor 11 with the wafer W. Then, the advancement needle 40 will separate the wafer W from the susceptor 11 and lift it upward. In the same manner as in the first embodiment, a space S is formed on the upper surface of the susceptor 1 and the wafer W.

第2實施方式中，做爲基板洗淨裝置之電 置’其中所執行之基板洗淨方法，與第I實施方 點’在於取代了對電極板20交互施加極性不 壓’而藉由推進針40對晶圓W交互施加極性不 壓者；但是空間S中會產生靜電場，於晶圓W 晶圓W自 L靜電場而 1實施方 ;電壓所引 起。 i洗淨裝置 &狀•接觸 則電性連 防止自該 .一端的表 出。推進 旋轉運動 面，吸附 1 1之上面 此時，與 面之間會 漿處理裝 式的不同 同之局電 同之局電 背面作用 -22- (20)1374475 有靜電性作用力’減低附著於晶圓W背面之微粒的 力’而使該微粒脫離者，則與第1實施方式相同》 更且’藉由推進針40對晶圓W施加之高電壓， 在500V以上，更理想是在2kV以上者，以及高電壓 加時間，以例如]秒以下爲佳者，與第1實施方式相 若依上述之基板洗淨方法，當感受器11及晶圓 間產生空間S時，因藉由推進針40對晶圓W交互施 性不同之高電壓’故空間S中會產生靜電場，而於晶 之背面作用有靜電性作用力；.更且，當空間S產生且 引線路將室10內減壓诗，因將N2氣體導入室10內 室1〇內會產生行進衝擊波，以被產生之行進衝擊波 圓W施加衝擊力。依此，附著於晶圓w背面之微粒 離至空間S。從而，微粒脫離並不需要電漿離子之濺 或是自由基之化學反應，而不會損傷晶圓W 〇 又，上述空間S產生時，因爲會自導熱氣體供 2 7對空間S噴出N2氣體，該被噴出至空間S之N2 會由吸引線路而被排出至室1 〇外，故空間S中會產i 氣體的阻力流。已脫離之微粒，會被捲入上述阻力流 而自空間S被排出至室1 0外。 從而，不會損傷晶圓W，而可充分去除附著於晶 背面之微粒。 其次，詳細說明本發明之第3實施方式之基板洗 置。 第3實施方式之基板處理裝置，與上述第1及第 附著 例如 之施 同。 W之 加極 圓W 以吸 ，故 對晶 會脫 鍍， 給孔 氣體 t n2 中， 圓W 淨裝 2實 -23- (21)1374475 施方式不同的點，是未對晶圓W施加電漿處理，而僅 行晶圓W之背面之洗淨者。 第4圖，係表示本發明之第3實施方式之基板洗淨 置之槪略構成的剖面圖。 第4圖中，基板洗淨裝置42係具有金屬製，例如 或不銹鋼至的箱型室43;該室43內，配置有放置晶圓 之圓柱狀平台44。In the second embodiment, as the substrate cleaning method of the substrate cleaning apparatus, the method of cleaning the substrate is performed, and the first embodiment is based on the fact that instead of applying the polarity non-pressure to the electrode plate 20, the needle is pushed. 40 pairs of wafers W are alternately applied with a polarity-free one; however, an electrostatic field is generated in the space S, and the wafer W is wafer W from the L electrostatic field and is implemented by a voltage; i Washing device & • Contact • Electrical connection is prevented from the end of the . Advancing the rotating surface, adsorbing the upper surface of 1 1 at this time, the difference between the surface and the surface of the slurry treatment is the same as that of the local electricity. 22- (20) 1374475 has an electrostatic force to reduce the adhesion The force of the fine particles on the back surface of the wafer W is the same as in the first embodiment, and the high voltage applied to the wafer W by the push pin 40 is 500 V or more, and more preferably 2 kV. In the above, the high voltage plus time is preferably, for example, less than or equal to the second embodiment. In the above-described substrate cleaning method according to the first embodiment, when the space S is generated between the susceptor 11 and the wafer, the needle is pushed by the needle. 40 pairs of wafers W interact with different high voltages'. Therefore, an electrostatic field is generated in the space S, and an electrostatic force acts on the back side of the crystal; moreover, when the space S is generated and the lead line is reduced in the chamber 10 In the poem, the N2 gas is introduced into the inner chamber 1 of the chamber 10 to generate a traveling shock wave, and the impact wave is applied to the generated traveling shock wave circle W. Accordingly, the particles attached to the back surface of the wafer w are separated from the space S. Therefore, the particle detachment does not require the plasma ion splash or the free radical chemical reaction without damaging the wafer W. When the space S is generated, the N2 gas is ejected from the heat transfer gas for 27 pairs of the space S. The N2 which is ejected to the space S is discharged to the outside of the chamber 1 by the suction line, so that the resistance flow of the i gas is generated in the space S. The detached particles are caught in the above resistance flow and are discharged from the space S to the outside of the chamber 10. Therefore, the particles attached to the back surface of the crystal can be sufficiently removed without damaging the wafer W. Next, the substrate washing of the third embodiment of the present invention will be described in detail. The substrate processing apparatus according to the third embodiment is the same as the above-described first and second attachments. W is added to the circle W to suck, so the crystal will be deplated, the hole gas t n2, the circle W is installed 2 -23- (21) 1374475 different points, is not applied to the wafer W The slurry is processed, and only the cleaner on the back side of the wafer W is used. Fig. 4 is a cross-sectional view showing a schematic configuration of a substrate cleaning apparatus according to a third embodiment of the present invention. In Fig. 4, the substrate cleaning device 42 has a box chamber 43 made of metal, for example, or stainless steel, and a cylindrical platform 44 on which the wafer is placed is disposed in the chamber 43.

進 裝 鋁 W 排 通 管 排 內 吸 板 直 力 氣 44 管 未 圓 室43之側壁與平台44之間，形成有排氣通路65 工作爲將平台44上方之氣體排出至室43外的通路。此 氣通路65，係連接於吸引線路。此吸引線路，具備連 排氣通路65與排氣泵亦即DP46，直徑約25mm的排氣 25;和配置於排.氣管45中途的閥V5。此閥V5可切斷 氣通路65和DP46。吸引線路則是以DP46排出室43 的氣體。 平台44之內部上方，配置有爲了以靜電吸附力來 附晶圓 W，由導電膜所構成的圓板狀電極板47;電極 47，係電性連接有直流電源48。晶圓W，係藉由以自 流電源48施加於電極板47之直流電壓所產生的庫倫 等，而被吸附保存在平台44的上面* 平台44上面吸附有晶圓W之部分，係開孔有複數 體供給孔49 »此等氣體供給孔49，係經由配置於平台 內部之氣體供給線路50，連通於具有閥V6之氣體供給 64，將來自連接於氣體供給管64之第1氣體供給部（ 圖示）的氣體，例如N2氣體，供給至平台44上面和晶 -24- (22) 1374475 W背面之間》另外閥V6，可切斷氣體供給孔49和第] 體供給部。 又’平台44上面吸附有晶圓W之部分，配置有自 台44上面突出的複數針5〗。針51係抬起被搬入室43 晶圓W，而自平台44分離。此時，平台44上面和晶圓 背面之間會形成空間S。此等針51，亦可與推進針3〇 樣的移動於圖中上下方向。 室4 3之側壁，安裝有開關晶圓W之搬入搬出口 的閘閥53。又，室43之天花板部，連接有將來自第2 體供給部（未圖示）的氣體，例如Ν2氣體，導入至室 內的氣體導入管54。此氣體導入管 54，中途設置有 V4。此閥V4，可切斷室43內和第2氣體供給部》 此基板洗淨裝置42，例如被配置於並聯型基板處 系統，將具備該基板處理系統之後述電漿處理裝置56 施加過電漿處理的晶圓W，其背面附著之微粒加以去除 第5圖，係表示配置有第4圖之基板處理裝置之基 處理系統，其槪略構成的圖。. 第5圖中基板處理系統5 5，係具備由蝕刻處理晶 W之電漿處理裝置56,及配置有對該電漿處理裝置56 送晶圓W之鏈結型單爪式搬運臂57的取放室58，所構 的處理艇（Process ship) 59;和收容可收取.1批份量 晶圓W的載具盒的，裝載埠60 ;和預先對準晶圓W的 對準器6〗；和上述之基板洗淨裝置42;和一種矩形之 通搬運通路，爲配置有純量型雙臂式搬運臂62的載運 氣 平 W 间 52 氣 43 閥 所 〇 板 圓 收 成 之 共 模 -25- (23) (23)1374475 組63。處理艇59、裝載埠60、對準器61及基板洗淨裝 置42，雖是可裝卸的連接於載運_模組61，但基板洗淨裝 置42是經由載運模組63與對準器61相對地，被配置於 在載運模組63之長邊方向的一端。 此基板處理系統55中，於電漿處理裝置56被施加了 電漿處理的晶圓W，係藉由取放室58內之搬運臂57,及 載運模組63內之搬運臂62，而被搬入基板洗淨裝置42。 基板洗淨裝置42，係執行後述之基板洗淨方法，來去除 附著於晶圓W背面的微粒。 以下，說明基板洗淨裝置4 2中所執行的基板洗淨方 法。 執行此基板洗淨方法的先決條件，係晶圓W被施加 有蝕刻處理，且依然被放置在平台44上面，電極板47未 施加有電壓，而閥V4〜V6爲全部關閉的狀態。 首先將被搬入至室43之晶圓W，放置於自平台44上 面突出的針5 1。此時，針5 1將晶圓W自平台44抬起的 高度，與第1實施方式相同，以10〜20mm爲佳。依此， 平台44上面和晶圓W背面之間，會形成空間S。 接著關閉閘閥53，同時打開排氣管45之閥V5及氣 體供給管64之閥V6，氣體供給孔49向著被抬起之晶圓 W背面，對空間S噴出N2氣體，而吸引線路將被噴出至 空間S之N2氣體排出至室43之外。依此，空間S中，會 產生自晶圓W背面向平台44之外周部流動的N2氣體阻 力流。此時，與第1實施方式相同，吸引線路使室43內 -26- (24) (24)1374475 之壓力不低於特定壓力地，排出室43內的1^2氣體等即 可。阻力流會捲入後述自晶圓W背面脫離之微粒，而自 室4 3被排出。 接著，直流電源48對電極板47交互施加極性不同的 高電壓。此時空間S中會產生靜電場，靜電性作用力會作 用於晶圓W背面，降低附著於晶圓W背面之微粒的附著 力；該微粒之脫離，和第1實施方式相同。然後脫離後之 微粒，會藉由上述阻力流，而自空間S被排出至室43 外。 更且，對電極板47施加之高電壓，例如在500V以 上，更理想是在2kV以上者，以及高電壓之施加時間， 以例如1秒以下爲佳者，與第1實施方式相同。 上述中對晶圓 W交互施加極性不同之高電壓的期 間，氣體導入管54會打開閥V4，而自氣體導入管54將 例如N2氣體導入室43內。此時，因室10內被吸引線路 減壓，故室43之天花板部之正下方會產生急速的壓力上 升，被導入之N2氣體會產生行進衝擊波，被產生的行進 衝擊波會對晶圓W施加衝擊力；而附著於晶圓W背面之 微粒脫離，與第〗實施方式相同。此時，脫離後之微粒， 亦會藉由上述阻力流，而自空間S被排出至室43外。另 外基板洗淨裝置42中，與第1實施方式相同，以在氣體 導入管54中較閥V4更下游之部分，設置孔口構造爲 佳。The loading of the aluminum W is performed in the inner tube of the suction tube. The straight force gas 44 tube is formed between the side wall of the non-circular chamber 43 and the platform 44, and an exhaust passage 65 is formed to operate to discharge the gas above the platform 44 to the outside of the chamber 43. This gas passage 65 is connected to the suction line. The suction line includes a exhaust gas passage 65, an exhaust gas pump, that is, a DP46, an exhaust gas 25 having a diameter of about 25 mm, and a valve V5 disposed in the middle of the exhaust gas pipe 45. This valve V5 cuts off the gas passages 65 and DP46. The suction line is the gas of the DP 46 discharge chamber 43. Above the inside of the stage 44, a disk-shaped electrode plate 47 made of a conductive film for attaching the wafer W with electrostatic attraction is disposed, and an electrode 47 is electrically connected to the DC power source 48. The wafer W is adsorbed and stored on the upper surface of the stage 44 by a coulomb generated by a DC voltage applied to the electrode plate 47 by the self-current power source 48. The portion of the wafer 44 is adsorbed on the platform 44, and the opening is The plurality of gas supply holes 49 are connected to the first gas supply unit connected to the gas supply pipe 64 via the gas supply line 50 disposed inside the platform via the gas supply line 50 having the valve V6 ( The gas shown in Fig. 3, for example, N2 gas, is supplied to the upper surface of the stage 44 and between the back surface of the crystal-24-(22) 1374475 W. The valve V6 can cut off the gas supply hole 49 and the body supply portion. Further, a portion of the wafer 44 on which the wafer W is adsorbed is disposed, and a plurality of pins 5 protruding from the upper surface of the table 44 are disposed. The needle 51 lifts the wafer W that is carried into the chamber 43 and is separated from the stage 44. At this time, a space S is formed between the upper surface of the stage 44 and the back surface of the wafer. These needles 51 can also be moved in the up and down direction in the drawing as compared with the advancement needle 3. A gate valve 53 for loading and unloading the switch wafer W is attached to the side wall of the chamber 43. Further, a ceiling portion of the chamber 43 is connected to a gas introduction pipe 54 for introducing a gas from a second body supply portion (not shown), for example, helium gas into the chamber. V4 is provided in the middle of the gas introduction pipe 54. The valve V4 can cut off the inside of the chamber 43 and the second gas supply unit. The substrate cleaning device 42 is disposed, for example, in a parallel substrate system, and the plasma processing device 56, which is provided with the substrate processing system, is overcharged. The slurry-processed wafer W is removed from the microparticles attached to the back surface. Fig. 5 is a view showing a schematic configuration of a substrate processing system in which the substrate processing apparatus of Fig. 4 is disposed. In the fifth embodiment, the substrate processing system 505 includes a plasma processing apparatus 56 that etches the crystal W, and a link type single-jaw transport arm 57 that is provided with the wafer W to the plasma processing apparatus 56. a picking chamber 58, a process ship 59; and a carrier box that holds a batch of wafers W, loading 埠 60; and an aligner 6 pre-aligned with the wafer W And the above-mentioned substrate cleaning device 42; and a rectangular through-transport path, which is a common mode of the round-clamping of the carrier-carrying air between the 52-gas valve and the 43-gas valve arranged with the pure-weight double-armed carrying arm 62. - (23) (23) 1374475 Group 63. The processing boat 59, the loading magazine 60, the aligner 61, and the substrate cleaning device 42 are detachably connected to the carrier module 61, but the substrate cleaning device 42 is opposed to the aligner 61 via the carrier module 63. The ground is disposed at one end of the longitudinal direction of the carrier module 63. In the substrate processing system 55, the wafer W to which the plasma processing is applied in the plasma processing apparatus 56 is carried by the transfer arm 57 in the pick-and-place chamber 58 and the transport arm 62 in the transport module 63. The substrate cleaning device 42 is carried in. The substrate cleaning device 42 performs a substrate cleaning method to be described later to remove particles adhering to the back surface of the wafer W. Hereinafter, a substrate cleaning method executed in the substrate cleaning device 42 will be described. A prerequisite for performing this substrate cleaning method is that the wafer W is subjected to an etching treatment and is still placed on the stage 44, the electrode plate 47 is not applied with a voltage, and the valves V4 to V6 are all closed. First, the wafer W carried into the chamber 43 is placed on the needle 51 which protrudes from the upper surface of the stage 44. At this time, the height at which the needle 51 lifts the wafer W from the stage 44 is preferably 10 to 20 mm as in the first embodiment. Accordingly, a space S is formed between the upper surface of the platform 44 and the back surface of the wafer W. Then, the gate valve 53 is closed, and the valve V5 of the exhaust pipe 45 and the valve V6 of the gas supply pipe 64 are opened, and the gas supply hole 49 is directed toward the back surface of the wafer W to be lifted, and N2 gas is ejected to the space S, and the suction line is ejected. The N2 gas to the space S is discharged to the outside of the chamber 43. Accordingly, in the space S, an N2 gas resistive flow flowing from the back surface of the wafer W to the outer periphery of the stage 44 occurs. At this time, as in the first embodiment, the suction line may have a pressure of not less than a specific pressure in the chamber -26-(24) (24) 1374475, and may be a gas or the like in the discharge chamber 43. The resistance flow is involved in the particles which are detached from the back surface of the wafer W, which will be described later, and are discharged from the chamber 43. Next, the DC power source 48 alternately applies a high voltage of a different polarity to the electrode plates 47. At this time, an electrostatic field is generated in the space S, and the electrostatic force acts on the back surface of the wafer W to reduce the adhesion of the particles adhering to the back surface of the wafer W. The detachment of the particles is the same as in the first embodiment. Then, the detached particles are discharged from the space S to the outside of the chamber 43 by the above-described resistance flow. Further, the high voltage applied to the electrode plate 47 is, for example, 500 V or more, more preferably 2 kV or more, and the application time of the high voltage is, for example, 1 second or less, which is the same as in the first embodiment. During the above-described process of applying a high voltage having a different polarity to the wafer W, the gas introduction pipe 54 opens the valve V4, and the gas introduction pipe 54 introduces, for example, N2 gas into the chamber 43. At this time, since the suction line is depressurized in the chamber 10, a rapid pressure rise occurs immediately below the ceiling portion of the chamber 43, and the introduced N2 gas generates a traveling shock wave, and the generated traveling shock wave applies to the wafer W. The impact force; and the particles attached to the back surface of the wafer W are detached, which is the same as in the first embodiment. At this time, the particles after the detachment are also discharged from the space S to the outside of the chamber 43 by the above-described resistance flow. In the other substrate cleaning device 42, as in the first embodiment, it is preferable to provide an orifice structure in a portion of the gas introduction pipe 54 that is downstream of the valve V4.

然後，氣體導入管54之閥V4依然打開，對晶圓W -27- (25) 1374475 施加特定次數的極性不同之高電壓之後，關閉氣體導入 54之閥V4、排氣管45之閥V5及氣體供給管64之 V6，而結束本處理。施加有上述之基板洗淨處理的晶 W，會經由搬入搬出口 52自室43被搬出，而被搬入載 模組63或裝載埠60 ;但因附著於晶圓W背面之微粒被 分去除，故載運模組63或裝載埠60內不會被微粒污染 若依上述之基板洗淨方法，當平台44極晶圓W之 B 形成空間S時，因對晶圓W交互施加有極性不同的高 壓，故上述空間S中會產生靜電場，而於晶圓W背面 用有靜電性作用力；更且，上述空間S產生且以吸引線 來減壓室43內時，因室43內導入有N2氣體，故事43 會產生行進衝.擊波，被產生的行進衝擊波會對晶圓W 加衝擊力。依此，附著於晶圓W背面之微粒會脫離至 間S中。從而，微粒脫離不需要電漿，而不會損傷晶 W » • 又，上述空間s產生時，因自氣體供給孔49對空 S噴出N2氣體，而吸引線路將被噴出至空間S之n2氣 排出至室43之外’故空間S中會產生N2氣體阻力流。 離後之微粒會被捲入上述阻力流，而自空間S被排出至 43外。 從而不會損傷晶圓W，而可充分去除附著於晶圓 背面之微粒。 上述之基板洗淨裝置42中，基板洗淨裝置42雖獨 具備有DP46，但亦可使基板洗淨裝置42及電漿處理裝 管 閥 圓 運 充 〇 間 電 作 路 內 施 空 圓 間 體 脫 室 W 白 置 -28- (26) 1374475 56共用DP;依此，·可簡單化基板處理系統55的構造。 上述之實施方式中，雖說明了電漿處理裝置做爲基板 洗淨裝置而工作的情況，或是設置專用之基板洗淨裝置的 情況，但構成基板處理系統之其他裝置，亦可做爲本發明 之基板洗淨裝置來工作。 例如，取放室做爲本發明之基板處理裝置而工作時， 該取放室具備搬運臂、和將取放室內排氣之排氣裝置、和 B 對取放室內導入氣體的氣體導入裝置；搬運臂以具有自晶 圓放置面突出的針、於晶圓W極晶圓放置面之間產生靜 電場的電極、及向著背面噴出氣體的氣體噴射裝置爲佳。 此取放室內，當以針將晶圓 W自放置面抬起，而產生空 間S時，是對電極施加高電壓，向著晶圓W背面噴射氣 體，而取放室內以排氣裝置被排氣。更且，取放室內以排 氣裝置減壓的期間，會自氣體導入裝置將氣體入至取放室 內。 [實施例] 其次，具體說明本發明之實施例。 以下之實施例，是被執行在上述之電漿處理裝置1 中〇 首先，準備背面附著了大量微粒之晶圓W，將該晶圓 W放置於室10內中，自感受器II突出的推進針上。 然後，以本排氣線路將是1〇內減壓後’關閉 APC14，同時打開排氣管]7之閥V2及導熱氣體供給管 -29- (27) (27)1374475 29之閥V3，穩定的將室10內持續排氣，，而自導熱氣體 供給孔27向著晶圓W背面噴出N2氣體。依此，室10內 維持在6.65xl〇3Pa(50 torr)以上，而於空間S產生阻 力流。 接著，打開閥VI，以流量7.0xl04SCCM對室10內 導入N2氣體。閥VI打開的期間，對電極板20交互施加 + 2kV和-2 kV的電壓，重複6次；之後，關閉閥VI。更 且，再次打開閥VI，以流量7.0xl04SCCM對室10內導 入N2氣體，在閥VI打開的期間，對電極板20交互施加 + 2kV和-2 kV的電壓，重複5次，之後再關閉閥VI。此 時’對空間S照射雷射光，以CCD攝影機來攝像微粒所 造成的散射光線，並觀測之。被攝像之散亂光線的形態， 表示於第6圖。 第6圖（a )，係模式化表示在閥V 1打開的期間，對 電極板20反覆交互施加+2kV和-2kV之電壓的情況下， 空間S之形態的圖。在此，藉由以被導入之N2氣體所產 生的行進衝擊波，和電壓交互施加而產生的靜電性作用 力’微粒係自晶圓 W背面大量脫離，而觀測到脫離後之 微粒形成一詳L的形態。 第6.圖（b )，係模式化表示自第6圖（a )經過數秒 之後，空間S之形態的圖。在此，觀測到於空間S中，藉 由自晶圓W背面向感受器1 1外周部流動的阻力流，使微 粒之一群L自空間S被持續排除的形態。 第6圖（c )，係模式化表示自第6圖（b )經過數秒 -30- (28) (28)1374475 之後，空間S之形態的圖。在此，觀測到微粒之一群L自 空間S被完全排除的形態。 彙整此等觀測結果，而表示於第7圖。 第7圖中，橫軸表示時間，縱軸表示微粒個數、電壓 値及壓力値。又，Ve表示被施加於電極板20之電壓，Vw 表示VE使晶圓W感應產生的電壓，P表示室1〇內的壓 力。更且，圖中被標定之各點，係表示各觀測時間中被觀 測到的微粒個數。另外，P値成爲一定的部分，係室1 〇 內之壓力超過可測定範圍的部分。 根據第7圖，得知打開閥V1而大量導入N2氣體至 室10之後，立刻藉由所產生之行進衝擊波使大量微粒自 晶圓W背面脫離；更且，藉由對電極板20反覆的交互施 加電壓，使微粒更加脫離。依此，得知藉由大量導入N2 氣體至室】〇內，及上述電壓之反覆交互施加，可充分使 附著於晶圓W背面之微粒脫離。更且，第2次對室1 0之 N2氣體大量導入，及上述電壓之反覆交互施加中，因脫 離之微粒數量減少，故得知進行一次對室10之N2氣體大 量導入，及上述電壓之反覆交互施加，可有效的使微粒脫 離。 又，同時以配置於吸引線路之中途，利用了雷射散射 法的微粒監視器，來觀測經由吸引線路而自室10內被排 出的微粒，而得到了與第7圖相同之觀測結果。依此，得 知了阻力流可有效的將脫離後之微粒自室]0內排出。 -31 - (29) (29)1374475 【圖式簡單說明】 [第1圖]做爲本發明第1實施方式之基板洗淨裝置， 表示電漿處理裝置之槪略構造的圖 [第2圖]第1圖之電漿處理裝置中所執行之基板洗淨 處理的程序圖 [第3圖]做爲本發明第2實施方式之基板洗淨裝置， 表示電漿處理裝置中推進針之槪略構造的圖 [第4圖]表示本發明第3實施方式之基板洗淨裝置之 槪略構造的圖 [第5圖]表示配置有第4圖之基板處理裝置之基板處 理系統之槪略構造的圖 [第6圖]模式化表示本發明之實施例中去除晶圓背面 之微粒之形態的圖；第6圖（a )，係模式化表示在閥V 1 打開的期間，對電極板20反覆交互施加+2kV和-2kV之 電壓的情況下，空間S之形態的圖；第6圖（b )，係模 式化表示自第6圖（a )經過數秒之後，空間S之形態的 圖；第6圖（c )，係模式化表示自第6圖（b )經過數秒 之後，空間S之形態的圖 [第7圖]針對本發明之實施例，表示微粒之去除之觀 測結果的圖表 [第8圖]表示用以對先前之晶圓W施加蝕刻處理之電 漿處理裝置之槪略構造的圖 【主要元件符號說明】 -32- (30)1374475Then, the valve V4 of the gas introduction pipe 54 is still opened, and after a certain number of high voltages of different polarities are applied to the wafer W -27-(25) 1374475, the valve V4 of the gas introduction 54 and the valve V5 of the exhaust pipe 45 are closed. The gas is supplied to V6 of the tube 64 to end the process. The crystal W to which the above-described substrate cleaning treatment is applied is carried out from the chamber 43 through the loading/unloading port 52, and is carried into the carrier module 63 or the loading cassette 60. However, since the particles adhering to the back surface of the wafer W are removed, the particles are removed. If the carrier module 63 or the loading cassette 60 is not contaminated by particles, according to the substrate cleaning method described above, when the space 44 of the wafer 44 of the wafer 44 forms a space S, a high voltage having a different polarity is applied to the wafer W. Therefore, an electrostatic field is generated in the space S, and an electrostatic force is applied to the back surface of the wafer W. Further, when the space S is generated and the chamber 43 is decompressed by the suction line, the N2 gas is introduced into the chamber 43. Story 43 will generate a rushing wave. The resulting traveling shock wave will add impact to the wafer W. Accordingly, the particles attached to the back surface of the wafer W are separated into the space S. Therefore, the particles are detached without plasma, and the crystal W is not damaged. • • When the space s is generated, the N2 gas is ejected from the gas supply hole 49 to the air S, and the suction line is ejected to the space S. Exhaust to the outside of the chamber 43, the N2 gas resistance flow is generated in the space S. The particles after the separation are caught in the above resistance flow, and are discharged from the space S to the outside of 43. Therefore, the wafer W is not damaged, and the particles attached to the back surface of the wafer can be sufficiently removed. In the substrate cleaning device 42 described above, the substrate cleaning device 42 is provided with the DP 46 alone, but the substrate cleaning device 42 and the plasma processing tube valve can be used to transport the inter-circle space. The detachment chamber W -28-(26) 1374475 56 shares the DP; accordingly, the structure of the substrate processing system 55 can be simplified. In the above-described embodiment, the plasma processing apparatus is operated as a substrate cleaning apparatus, or a dedicated substrate cleaning apparatus is provided. However, other apparatuses constituting the substrate processing system may be used as the basis. The substrate cleaning device of the invention works. For example, when the pick-and-place chamber is operated as the substrate processing apparatus of the present invention, the pick-and-place chamber includes a transport arm, an exhaust device that exhausts the inside of the pick-and-place chamber, and a gas introduction device that introduces a gas into the pick-and-place chamber; It is preferable that the transfer arm has an electrode that protrudes from the wafer placement surface, an electrode that generates an electrostatic field between the wafer W-electrode placement surfaces, and a gas ejection device that ejects gas toward the back surface. In the pick-and-place chamber, when the wafer W is lifted from the placement surface by the needle to generate the space S, a high voltage is applied to the electrodes, and gas is injected toward the back surface of the wafer W, and the exhaust chamber is exhausted by the exhaust device. . Further, during the period in which the exhaust chamber is depressurized in the take-out chamber, gas is introduced into the pick-and-place chamber from the gas introduction device. [Embodiment] Next, an embodiment of the present invention will be specifically described. In the following embodiment, the plasma processing apparatus 1 is executed. First, a wafer W having a large amount of fine particles attached to the back surface is prepared, and the wafer W is placed in the chamber 10, and the push needle protruded from the susceptor II. on. Then, the exhaust line will be decompressed within 1〇, then 'close the APC14, open the exhaust pipe>7 valve V2 and the heat conduction gas supply pipe -29- (27) (27) 1374475 29 valve V3, stable The inside of the chamber 10 is continuously exhausted, and N2 gas is ejected from the heat transfer gas supply hole 27 toward the back surface of the wafer W. Accordingly, the chamber 10 is maintained at 6.65 x 10 〇 3 Pa (50 torr) or more, and a resistance flow is generated in the space S. Next, the valve VI was opened, and N2 gas was introduced into the chamber 10 at a flow rate of 7.0 x 10 04 SCCM. During the period in which the valve VI is open, a voltage of + 2 kV and -2 kV is alternately applied to the electrode plate 20, and is repeated 6 times; thereafter, the valve VI is closed. Further, the valve VI is opened again, and the N2 gas is introduced into the chamber 10 at a flow rate of 7.0×10 4 SCCM. During the opening of the valve VI, a voltage of +2 kV and -2 kV is alternately applied to the electrode plate 20, and the valve is repeated five times, and then the valve is closed. VI. At this time, the space S is irradiated with laser light, and the scattered light caused by the particles is photographed by a CCD camera and observed. The form of the scattered light that is imaged is shown in Fig. 6. Fig. 6(a) is a diagram showing the form of the space S when the voltage of +2kV and -2kV is alternately applied to the electrode plate 20 while the valve V1 is open. Here, the electrostatic force generated by the interaction of the traveling shock wave generated by the introduced N2 gas and the voltage is applied, and the particles are largely detached from the back surface of the wafer W, and the particle formation after the detachment is observed. Shape. Fig. 6. (b) is a diagram showing the form of the space S after a few seconds from the sixth diagram (a). Here, in the space S, a flow of resistance flowing from the back surface of the wafer W to the outer peripheral portion of the susceptor 1 is observed, and a group L of the fine particles is continuously removed from the space S. Fig. 6(c) is a diagram showing the form of the space S after a few seconds -30-(28) (28) 1374475 from Fig. 6(b). Here, a form in which one of the particles L is completely excluded from the space S is observed. These observations are summarized and shown in Figure 7. In Fig. 7, the horizontal axis represents time, and the vertical axis represents the number of particles, voltage 値, and pressure 値. Further, Ve represents the voltage applied to the electrode plate 20, Vw represents the voltage induced by the VE to the wafer W, and P represents the pressure in the chamber 1〇. Furthermore, the points to be marked in the figure indicate the number of particles observed in each observation time. Further, P 値 becomes a constant portion, and the pressure in the chamber 1 超过 exceeds the measurable range. According to Fig. 7, it is known that after the valve V1 is opened and a large amount of N2 gas is introduced into the chamber 10, a large amount of particles are detached from the back surface of the wafer W by the generated traveling shock wave; moreover, by the interaction of the electrode plate 20 A voltage is applied to make the particles more detached. Accordingly, it has been found that by introducing a large amount of N2 gas into the chamber and intermittently applying the voltage, the particles adhering to the back surface of the wafer W can be sufficiently removed. Further, in the second time, a large amount of N2 gas is introduced into the chamber 10, and in the repeated application of the voltage, since the number of particles to be separated is reduced, it is known that a large amount of N2 gas is introduced into the chamber 10, and the voltage is applied. Repeatedly applied in an interactive manner, the particles can be effectively detached. Further, at the same time, a particle monitor disposed by the laser scattering method in the middle of the suction line was used to observe the particles discharged from the chamber 10 through the suction line, and the same observation results as in Fig. 7 were obtained. Accordingly, it is known that the resistance flow can effectively discharge the detached particles from the chamber]0. -31 - (29) (29) 1374475 [Brief Description of the Drawings] [Fig. 1] A substrate cleaning apparatus according to a first embodiment of the present invention, showing a schematic structure of a plasma processing apparatus [Fig. 2] A plan view of a substrate cleaning process performed in the plasma processing apparatus of Fig. 1 is a substrate cleaning apparatus according to a second embodiment of the present invention, and shows a strategy for advancing a needle in a plasma processing apparatus. FIG. 4 is a view showing a schematic structure of a substrate cleaning apparatus according to a third embodiment of the present invention. FIG. 5 is a schematic view showing a schematic configuration of a substrate processing system in which the substrate processing apparatus of FIG. 4 is disposed. Fig. 6 is a view schematically showing a state in which particles of the back surface of the wafer are removed in the embodiment of the present invention; Fig. 6(a) is a schematic diagram showing the counter electrode plate 20 being repeated during the opening of the valve V1. A diagram showing the form of the space S when the voltages of +2kV and -2kV are applied alternately; and FIG. 6(b) is a diagram showing the form of the space S after a few seconds from the sixth diagram (a); Figure 6 (c) shows the pattern of the shape of the space S after a few seconds from the sixth figure (b) [Fig. 7] For the embodiment of the present invention, a graph showing the observation result of the removal of the microparticles [Fig. 8] is a diagram showing a schematic configuration of a plasma processing apparatus for applying an etching treatment to the wafer W [main element symbol description] - 32- (30) 1374475

1 ' 56 電 漿 處 理 '裝 置 10 、4 3 室 1 1 感 受 器 12 '65 排 氣 通 路 13 緩 衝 板 14 APC 15 TMP 16 、46 DP 17 '45 排 氣 管 18 局 頻 電 源 19 整 合 器 20 ' 35 ' 47 電 極 板 22 >41' 48 直 流 電 源 24 聚 焦 環 25 冷 媒 室 26 配 管 2 7 導 熱 氣 體 供 給 孔 28 導 熱 氣 體 供 給 線路 29 導 熱 氣 體 供 給 管 30 ' 40 推 進 針 3 1 ' 5 2 搬 入 搬 出 □ 32 ' 53 閘 閥 3 3 蓮 蓬 頭 34 氣 體 通 氣 孔 -33- 13744751 ' 56 plasma treatment' device 10, 4 3 chamber 1 1 susceptor 12 '65 exhaust passage 13 buffer plate 14 APC 15 TMP 16 , 46 DP 17 '45 exhaust pipe 18 local frequency power supply 19 integrator 20 ' 35 ' 47 Electrode plate 22 > 41' 48 DC power supply 24 Focus ring 25 Refrigerant chamber 26 Pipe 2 7 Heat transfer gas supply hole 28 Heat transfer gas supply line 29 Heat transfer gas supply pipe 30 ' 40 Push pin 3 1 ' 5 2 Move in and out □ 32 ' 53 gate valve 3 3 shower head 34 gas vent -33- 1374475

(31) 36 電極支撐體 37 緩衝室 38 處理氣體導入管 39 磁鐵 4 2 基板洗淨裝置 44 平台 49 氣體供給孔 50 氣體供給線路 5 1 針 54 氣體導入管 55 基板處理系統 57、62 搬運臂 5 8 取放室 59 處理艇 60 裝載埠 6 1 對準器 63 載運模組 64 氣體供給管 -34 -(31) 36 Electrode support 37 Buffer chamber 38 Process gas introduction pipe 39 Magnet 4 2 Substrate cleaning device 44 Platform 49 Gas supply hole 50 Gas supply line 5 1 Needle 54 Gas introduction tube 55 Substrate processing system 57, 62 Transport arm 5 8 pick and place chamber 59 processing boat 60 loading 埠 6 1 aligner 63 carrying module 64 gas supply tube -34 -

Claims (1)

1374475 第0941 12570號專利申請案中文申請專圍修正本 民國10丰甸51374475 Patent Application No. 0941 12570 for Chinese Application for Correction of the Republic of China 10 十、申請專利範圍 1. 一種基板洗淨裝置，其特徵係具備 收容基板的收容室； 和配置於收容室內，放置上述基板的放置台； 和配置於該放置台，被施加電壓而將上述基板吸附於 上述放置台的電極； 和將上述收容室內加以排氣的排氣裝置； 和分離上述放置台及上述基板，使上述放置台及上述 基板之間產生空間的分離裝置；. 和對上述空間供給氣體的氣體供給裝置； 當上述空間產生時，對上述電極施加電壓而在上述基 板和上述放置台之間使電場產生，並在上述基板之背面處 使靜電應力產生，而使附著於上述基板之背面處的異物之 對於上述基板的附著力減弱，並使附著在上述基板之背面 處的異物從上述基板之背面而脫離，再使上述氣體供給裝 置對於上述空間供給氣體，並使上述排氣裝置將上述收容 室內排氣，藉由此，而將從上述基板所脫離了的異物從上 述收容室內排出。 2.—種基板洗淨裝置，其特徵係具備 收容基板的收容室； 和配置於收容室內，放置上述基板的放置台； 和將上述收容室內加以排氣的排氣裝置； 1374415 丨年Γ月，: 和分離上述放置台及上述基板，使上述放置台及上述 基板之間產生空間，同時接觸上述基板並對上述基板施加 電壓的分離裝置； 和對上输空間供給氣體的氣體供給裝置； 和將氣體導入上述收容室內的氣體導入部； 當上述空間產生時，對上述基板施加電壓而在上述基 板和上述放置台之間使電場產生，並在上述基板之背面處 使靜電應力產生，而使附著於上述基板之背面處的異物之 對於上述基板的附著力減弱，並使附著在上述基板之背面 處的異物從上述基板之背面而脫離，再使上述氣體供給裝 置對於上述空間供給氣體，並使上述排氣裝置將上述收容 室內排氣’進而，當上述收容室內被作減壓且產生上述空 間時，藉由藉由使上述氣體導入部對於上述收容室內導入 氣體，而將從上述基板所脫離了的異物從上述收容室內排 出。 3. 如申請專利範圍第1項或第2項所記載之基板洗 淨裝置，其中，更具備在上述收容室內被減壓且產生上述 空間時，將氣體導入上述收容室內的氣體導入部者。 4. 如申請專利範圍第1項或第2項所記載之基板洗 淨裝置，其中，上述電極係不連續的被施加電壓者。 5. 如申請專利範圍第3項所記載之基板洗淨裝置， 其中，上述電極係被交互施加極性不同的電壓者。 6. 如申請專利範圍第4項所記載之基板洗淨裝置， 其中，上述電壓之絕對値係在500V以上者。 -2- 1374475 / ^11 7.如申請專利範圍第 項所記載之基板洗淨裝置 其中’上述電壓之絕對値係在2kV以上者。 8. 如申請專利範圍第丨項或第2項所記載之基板洗 淨裝置’其中，上述排氣裝置在上述空間產生時，係保持 上述收容室內之壓力在133Pa以上者。 9. 如申請專利範圍第7項所記載之基板洗淨裝置， 其中’上述排氣裝置在上述空間產生時，係保持上述收容 室內之壓力在1.33xl03~1.33xl04Pa的範圍者》 1〇· —種基板洗淨方法，係去除附著於基板背面之異 物的基板洗淨方法；其特徵係具有 將上述基板收容於收容室的收容步驟； 和將上述基板，放置於配置在上述收容室之放置台的 放置步驟； 和使上述放置台及上述基板之間產生空間地，來分離 上述放置台及上述基板的分離步驟； • 和當上述空間產生時，對配置於上述放置台之電極施 加電壓’而在上述基板和上述放置台之間使電場產生，並 以藉由上述電場而作用在上述基板之背面處的靜電性應 力’而使上述異物之對於上述基板的附著力減弱，並使附 著在上述基板之背面處的異物從上述基板之背面而脫離的 電壓施加步驟； 和當上述空間產生時’對上述空間供給氣體的氣體供 給步驟； 和當上述空間產生時，將上述收容室內排氣的排氣步 137447510. Patent application scope 1. A substrate cleaning apparatus characterized by comprising: a storage chamber for accommodating a substrate; and a placement table disposed in the storage chamber to place the substrate; and a substrate disposed on the placement stage, wherein the substrate is applied with a voltage An electrode adsorbed to the placement stage; and an exhaust device for exhausting the storage chamber; and a separation device for separating the placement table and the substrate to create a space between the placement table and the substrate; and the space a gas supply device that supplies a gas; when the space is generated, a voltage is applied to the electrode to generate an electric field between the substrate and the placement stage, and electrostatic stress is generated on the back surface of the substrate to adhere to the substrate The adhesion of the foreign matter on the back surface to the substrate is weakened, and the foreign matter adhering to the back surface of the substrate is separated from the back surface of the substrate, and the gas supply device supplies the gas to the space and causes the exhaust gas. The device exhausts the storage chamber, thereby separating from the substrate Foreign matter is discharged from said container room. 2. A substrate cleaning apparatus comprising: a storage chamber for housing a substrate; and a placement table disposed in the storage chamber to place the substrate; and an exhaust device for exhausting the storage chamber; 1374415 And: a separating device that separates the placing table and the substrate to create a space between the placing table and the substrate, and simultaneously contacts the substrate and applies a voltage to the substrate; and a gas supply device that supplies a gas to the upper conveying space; a gas is introduced into the gas introduction portion in the storage chamber; when the space is generated, a voltage is applied to the substrate to generate an electric field between the substrate and the placement stage, and electrostatic stress is generated on the back surface of the substrate. The adhesion of the foreign matter adhering to the back surface of the substrate to the substrate is weakened, and the foreign matter adhering to the back surface of the substrate is separated from the back surface of the substrate, and the gas supply device supplies the gas to the space. Having the exhaust device vent the inside of the accommodating chamber, and further, when the accommodating When the reduced pressure and is for generating the space between, so that the gas by foreign substances by gas introducing portion for introducing the accommodating chamber, and out of the substrate from the discharge from the container room. 3. The substrate cleaning apparatus according to the first aspect or the second aspect of the invention, wherein the gas introduction unit that introduces a gas into the storage chamber when the space is reduced in the storage chamber and the space is generated is further provided. 4. The substrate cleaning apparatus according to claim 1 or 2, wherein the electrode is discontinuously applied with a voltage. 5. The substrate cleaning apparatus according to claim 3, wherein the electrodes are alternately applied with voltages having different polarities. 6. The substrate cleaning apparatus according to claim 4, wherein the absolute voltage of the voltage is 500 V or more. -2- 1374475 / ^11 7. The substrate cleaning apparatus according to the first aspect of the invention, wherein the absolute voltage of the above voltage is 2 kV or more. 8. The substrate cleaning apparatus according to the invention of claim 2, wherein the exhaust device maintains a pressure of 133 Pa or more in the storage chamber when the space is generated. 9. The substrate cleaning device according to claim 7, wherein the above-mentioned exhaust device maintains a pressure in the storage chamber in a range of 1.33 x 103 to 1.33 x 104 Pa when the space is generated. The substrate cleaning method is a substrate cleaning method for removing foreign matter adhering to the back surface of the substrate, and is characterized in that the substrate is stored in a storage chamber; and the substrate is placed on a placement table disposed in the storage chamber a step of separating and separating the placement stage and the substrate by creating a space between the placement stage and the substrate; and applying a voltage to the electrodes disposed on the placement stage when the space is generated An electric field is generated between the substrate and the placement stage, and an electrostatic stress acting on the back surface of the substrate by the electric field is used to weaken the adhesion of the foreign matter to the substrate, and to adhere to the above a voltage application step of separating foreign matter at the back surface of the substrate from the back surface of the substrate; and when the space is generated Supplying gas to the gas supply space above steps; and when said space is generated, the exhaust gas of the container room exhaust step 1,374,475 驟， 經由上述氣體供給步驟和上述排氣步驟，而將從上述 基板之背面所脫離了的異物從上述收容室內排出。 11.—種基板洗淨方法，係去除附著於基板背面之異 物的基板洗淨方法；其特徵係具有 將上述基板收容於收容室的收容步驟； 和將上述基板，放置於配置在上述收容室之放置台的 放置步驟： 和使上述放置台及上述基板之間產生空間地，來分離 上述放置台及上述基板的分離步驟： 和當上述空間產生時，對上述基板施加電壓，而在上 述基板和上述放置台之間使電場產生，並以藉由上述電場 而作用在上述基板之背面處的靜電性應力，而使上述異物 之對於上述基板的附著力減弱，並使附著在上述基板之背 面處的異物從上述基板之背面而脫離的電壓施加步驟； 和當上述空間產生時，對上述空間供給氣體的氣體供 給步驟； 和當上述空間產生時，將上述收容室內排氣的排氣步 驟； 和當上述收容室內被減壓且產生上述空間時，對於上 述收容室內導入氣體之氣體導入步驟， 經由上述氣體供給步驟、上述排氣步驟以及上述氣體 導入步驟，而將從上述基板之背面所脫離了的異物從上述 收容室內排出。 -4 - 1374475 作⑽|| 12·如申請專利範圍第10項或第11項所記載之基板 洗淨方法，其中，更具備在上述收容室內被減壓且產生上 述空間時，將氣體導入上述收容室內的氣體導入步驟者。 13·如申請專利範圍第10項或第11項所記載之基板 洗淨方法，其中，上述電壓施加步驟中，係對上述電極不 連續的施加電壓者》 14.如申請專利範圍第1 1項所記載之基板洗淨方 法，其中，上述電壓施加步驟中，係對上述電極交互施加 極性不同的電壓者。Then, the foreign matter separated from the back surface of the substrate is discharged from the storage chamber through the gas supply step and the exhaust step. 11. A substrate cleaning method for removing a foreign matter adhering to a back surface of a substrate; the method comprising: storing a substrate in a storage chamber; and placing the substrate in the storage chamber a placing step of placing the placing table: separating the placing table and the substrate by creating a space between the placing table and the substrate: and applying a voltage to the substrate when the space is generated, and on the substrate An electric field is generated between the placement stage and an electrostatic stress acting on the back surface of the substrate by the electric field, so that the adhesion of the foreign matter to the substrate is weakened and adhered to the back surface of the substrate. a voltage application step of separating foreign matter from the back surface of the substrate; and a gas supply step of supplying a gas to the space when the space is generated; and an exhausting step of exhausting the storage chamber when the space is generated; And when the storage chamber is decompressed and the space is generated, the introduction into the storage compartment In the gas introduction step of the gas, the foreign matter separated from the back surface of the substrate is discharged from the storage chamber through the gas supply step, the exhaust step, and the gas introduction step. In the method of cleaning the substrate according to the above aspect of the invention, the method further comprises: introducing a gas into the chamber when the space is reduced in the storage chamber and the space is generated; The gas introduction step in the storage chamber. The substrate cleaning method according to claim 10, wherein the voltage application step is a method of applying a voltage to the electrode discontinuously. In the substrate cleaning method described above, in the voltage application step, a voltage having a different polarity is applied to the electrodes. -5--5-
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