CN1691288A - Substrate cleaning apparatus and method - Google Patents
Substrate cleaning apparatus and method Download PDFInfo
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- CN1691288A CN1691288A CNA2005100679314A CN200510067931A CN1691288A CN 1691288 A CN1691288 A CN 1691288A CN A2005100679314 A CNA2005100679314 A CN A2005100679314A CN 200510067931 A CN200510067931 A CN 200510067931A CN 1691288 A CN1691288 A CN 1691288A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
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- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
A substrate cleaning apparatus includes a chamber for accommodating a substrate; a mounting table, disposed in the chamber, for mounting thereon the substrate; an electrode disposed in the mounting table, the substrate being attracted and held on the mounting table as a voltage is applied to the electrode; an exhaust unit for exhausting the inside of the chamber; a separating unit for separating the mounting table and the substrate to form a space therebetween; and a gas supply unit for supplying a gas into the space. While the space is formed, voltages of different polarities are alternately applied to the electrode, the gas supply unit supplies a gas into the space and the exhaust unit exhausts the inside of the chamber. The substrate cleaning apparatus further includes a gas introduction unit for introducing a gas into the chamber while the chamber is depressurized and the space is formed.
Description
Technical field
The present invention relates to base plate cleaning device and substrate-cleaning method, particularly relate to the base plate cleaning device and the substrate-cleaning method of the foreign matter of removing the back side that is attached to the substrate that has applied plasma treatment.
Background technology
Usually, in the manufacture process of semiconductor device,, implement the processing (hereinafter referred to as ' plasma treatment ') with plasma such as etching or sputter, CVD (chemical vapor deposition) to semiconductor wafer (hereinafter referred to as ' wafer ') as handled object.
For example, be used for implementing the plasma processing apparatus 80 of etch processes, as shown in Figure 8, have: the cylindrical vessel 81 of accommodating wafer, be disposed at the inside of this cylindrical vessel 81, as the pedestal 82 of the mounting table of mounting wafer, relative with the face (hereinafter referred to as ' mounting surface ') of mounting wafer and be configured to connect the knock-out pin 83 of pedestal 82.Pedestal 82 disposes the electrostatic chuck 85 of the electrode that is connected in DC power supply 84 on mounting surface, and then there is the lower electrode 87 (for example, with reference to patent documentation 1) that is connected in high frequency electric source 86 in portion within it.
In plasma processing apparatus 80, after electrostatic chuck 85 invests mounting surface to chip sucking by Electrostatic Absorption power, High frequency power is put on lower electrode 87, produce high-frequency electric field above in cylindrical vessel 81 and between the pedestal 82, make to import the processing gas separations in the cylindrical vessel 81 and produce plasma.The plasma that produces is gathered in the surface of wafer by the gathering ring (not shown) round the periphery configuration of wafer, is etched in formed oxide-film on the surface of wafer.
In addition, implemented the wafer of etch processes, lifted from mounting surface, from cylindrical vessel 81, taken out of by the joint arm that enters cylindrical vessel 81 carrying devices (not shown) such as (Scalar arm) by knock-out pin 83.
In the middle of the plasma that in etch processes, produces, be not gathered in the surperficial person of wafer, collide in the inwall of cylindrical vessel 81 and produce particle.In addition, in etch processes, produce reaction product.Though its major part of these particles or reaction product is discharged from cylindrical vessel 81 by not shown exhaust apparatus, a part of particle or the reaction products that residue in the cylindrical vessel 81 are piled up in mounting surface.In addition, pedestal 82 results from plasma etc. and the particle that produces also is piled up in mounting surface.These are piled up in the particle of mounting surface or reaction product and during in mounting surface, are attached to chip back surface as foreign matter in the wafer mounting.As this removal method that is attached to the particle or the reaction product of chip back surface, be known with the wet cleaning of cleaning fluid etc.
In addition, as the method for not using cleaning fluid, between wafer that lifts by knock-out pin and mounting surface, produce plasma, the effect of the sputter of the ion by the plasma that produces, or the removal method that the particle of chip back surface is removed in the effect of the chemical reaction that causes of free radical also is known (for example, with reference to patent documentation 2).
[patent documentation 1] spy opens flat 5-226291 communique (Fig. 1)
No. 4962049 communique of [patent documentation 2] United States Patent (USP) (second hurdle the 67th walks to third column the 17th row)
But, if wafer cleans then cleaning fluid is contaminated repeatedly.Thereby, exist the contaminated such problem of wafer surface such as particle that is contained because of in the contaminated cleaning fluid in wafer cleans.In addition, when the wafer that etch processes applied was moved into the chamber of next procedure, the particle of Qu Chuing did not pollute this chamber interior sometimes.
In addition, in the occasion of removing the particle of chip back surface by plasma, wafer surface is implemented excessive plasma treatment and damage wafers by the plasma that produces.For example, exist wafer surface is implemented excessive etch processes and produced the such problem of over etching.
Summary of the invention
The object of the present invention is to provide a kind of not wounded substrate, can fully remove the base plate cleaning device and the substrate-cleaning method of the foreign matter at the back side that is attached to substrate.
To achieve these goals, technical scheme 1 described base plate cleaning device is characterized in that, has: the reception room of accommodating substrate; Be disposed in this reception room the mounting table of mounting aforesaid base plate; Be disposed at this mounting table, when applying voltage aforesaid base plate be adsorbed in the electrode of aforementioned mounting table; To carrying out the exhaust apparatus of exhaust in the aforementioned reception room; This mounting table and aforesaid base plate are left and between aforementioned mounting table and aforesaid base plate, produce the separating device in space; And gas supplied to the gas supply device of aforesaid space, and when producing aforesaid space, voltage puts on former electrodes, and aforementioned gas supply device supplies to aforesaid space to gas, and aforementioned exhaust apparatus carries out exhaust to aforementioned reception room.
Technical scheme 2 described base plate cleaning devices is characterized in that, in technical scheme 1 described base plate cleaning device, also have and are depressurized in aforementioned reception room and when producing aforesaid space, and gas is imported gas introduction part in the aforementioned reception room.
Technical scheme 3 described base plate cleaning devices is characterized in that, in technical scheme 1 or 2 described base plate cleaning devices, voltage puts on former electrodes discontinuously.
Technical scheme 4 described base plate cleaning devices is characterized in that, in technical scheme 3 described base plate cleaning devices, the voltage that polarity is different alternatively puts on former electrodes.
Technical scheme 5 described base plate cleaning devices is characterized in that, in technical scheme 4 described base plate cleaning devices, the absolute value of aforesaid voltage is more than the 500V.
Technical scheme 6 described base plate cleaning devices is characterized in that, in technical scheme 5 described base plate cleaning devices, the absolute value of aforesaid voltage is more than the 2kV.
Technical scheme 7 described base plate cleaning devices is characterized in that, in the base plate cleaning device described in any one in technical scheme 1 to 6, aforementioned exhaust apparatus remains in the pressure in the aforementioned reception room more than the 133Pa when producing aforesaid space.
Technical scheme 8 described base plate cleaning devices is characterized in that, in technical scheme 7 described base plate cleaning devices, it is characterized in that, aforementioned exhaust apparatus remains in 1.33 * 10 to the pressure in the aforementioned reception room when producing aforesaid space
3～1.33 * 10
4In the scope of Pa.
To achieve these goals, technical scheme 9 described base plate cleaning devices is characterized in that, have: the reception room of accommodating substrate; Be disposed in this reception room the mounting table of mounting aforesaid base plate; To carrying out the exhaust apparatus of exhaust in the aforementioned reception room; This mounting table and aforesaid base plate are left and between aforementioned mounting table and aforesaid base plate, produce the space, and be contacted with aforesaid base plate and voltage put on the separating device of aforesaid base plate; Gas is supplied to the gas supply device of aforesaid space; With the gas gatherer that gas is imported in the aforementioned reception room, when producing aforesaid space, voltage puts on aforesaid base plate, aforementioned gas supply device supplies to aforesaid space to gas, aforementioned exhaust apparatus carries out exhaust to aforementioned reception room, and then, in aforementioned reception room, be depressurized and when producing aforesaid space, aforementioned gas introduction part imports gas in the aforementioned reception room.
To achieve these goals, technical scheme 10 described substrate-cleaning methods are substrate-cleaning methods of removing the foreign matter at the back side that is attached to substrate, it is characterized in that, comprising: the step of accommodating that substrate is contained in reception room; The mounting step of aforesaid base plate mounting in the mounting table that is disposed at aforementioned reception room; Aforementioned mounting table and aforesaid base plate are left so that between aforementioned mounting table and aforesaid base plate, produce the step of leaving in space; When producing aforesaid space, the voltage that voltage is put on the electrode that is disposed at aforementioned mounting table applies step; When producing aforesaid space, gas is supplied to the gas supplying step of aforesaid space; With when producing aforesaid space, give aforementioned steps of exhausting of accommodating indoor exhaust.
To achieve these goals, the substrate-cleaning method described in the technical scheme 14 is a substrate-cleaning method of removing the foreign matter at the back side that is attached to substrate, it is characterized in that, comprising: the step of accommodating that substrate is contained in reception room; The mounting step of aforesaid base plate mounting in the mounting table that is disposed at aforementioned reception room; Aforementioned mounting table and aforesaid base plate are left so that between aforementioned mounting table and aforesaid base plate, produce the step of leaving in space; When producing aforesaid space, the voltage that voltage is put on aforesaid base plate applies step; When producing aforesaid space, gas is supplied to the gas supplying step of aforesaid space; When producing aforesaid space, give aforementioned steps of exhausting of accommodating indoor exhaust; And in aforementioned reception room, be depressurized and when producing aforesaid space, the gas that gas is imported in the aforementioned reception room imports step.
If with technical scheme 1 described base plate cleaning device, during then because of generation space between mounting table and substrate, voltage puts on the electrode that is disposed at mounting table, and the stress of static is in the back side of substrate so produce electrostatic field in above-mentioned space.Whereby, be attached to the foreign matter disengaging at the back side of substrate.In addition, because when producing above-mentioned space, gas supplies to the space, be deflated in the reception room, so produce air-flow in the space, the foreign matter of disengaging is discharged from from the space by this air-flow, and then is deflated from reception room.Thereby base plate cleaning device is wounded substrate and fully remove the foreign matter at the back side that is attached to substrate not.
If with technical scheme 2 described base plate cleaning devices, then because when being depressurized in reception room, gas is imported in the reception room, so produce the shock wave of advancing in reception room, the foreign matter that is attached to the back side of substrate breaks away to the space by this shock wave.Thereby, wounded substrate and remove the foreign matter at the back side be attached to substrate expeditiously not.
If with technical scheme 3 described base plate cleaning devices, then because voltage puts on electrode discontinuously, so repeatedly to the voltage application of substrate.Whereby, the stress repetition of static acts on the back side of substrate.Thereby, can remove the foreign matter at the back side that is attached to substrate more fully.
If with technical scheme 4 described base plate cleaning devices, then because the different voltage of polarity alternatively applies, so can prevent the charged of substrate.If substrate is charged, then the electric stress that acts on the back side of substrate by voltage application reduces.Thereby, by preventing the charged of substrate, can prevent to be attached to the reduction of removal efficient of foreign matter at the back side of substrate.
If with technical scheme 5 described base plate cleaning devices, then,, can carry out the disengaging of foreign matter reliably so can strengthen the electric stress at the back side that acts on substrate because putting on the voltage of electrode when producing the space is more than the 500V.
If with technical scheme 6 described base plate cleaning devices, then because above-mentioned voltage is more than the 2kV, so the stress of the above-mentioned static of XXL more.
If with technical scheme 7 described base plate cleaning devices, then because exhaust apparatus remains in the pressure in the reception room more than the 133Pa, so in the space, can produce the big viscous flow of gas viscosity power.The foreign matter that breaks away from from the back side of substrate is involved in viscous flow and gas in reception room is deflated from reception room.Thereby, can remove the foreign matter at the back side that is attached to substrate reliably.
If with technical scheme 8 described base plate cleaning devices, then because exhaust apparatus remains in 1.33 * 10 to the pressure in the reception room
3～1.33 * 10
4In the scope of Pa, so in the space, can produce viscous flow reliably.
If with technical scheme 9 described base plate cleaning devices, during then because of generation space between mounting table and substrate, separating device puts on substrate to voltage, and the stress of static is in the back side of substrate so produce electrostatic field in above-mentioned space.Whereby, be attached to the foreign matter disengaging at the back side of substrate.And then because when being depressurized in producing space and reception room, the gas introduction part imports gas in the reception room, so produce the shock wave of advancing in reception room, the foreign matter that is attached to the back side of substrate leans on this shock wave to break away to the space.In addition, because when producing above-mentioned space, gas supplies to the space, is deflated in the reception room, so produce air-flow in the space, the foreign matter of disengaging is discharged from the space by this air-flow, and then exhaust from reception room.Thereby, base plate cleaning device, not wounded substrate and fully remove the foreign matter at the back side that is attached to substrate.
If with technical scheme 10 described substrate-cleaning methods, during then because of generation space between mounting table and substrate, voltage puts on the electrode that is arranged at mounting table, and the stress of static is in the back side of substrate so produce electrostatic field in above-mentioned space.Whereby, be attached to the foreign matter disengaging at the back side of substrate.In addition, because when producing above-mentioned space, gas supplies to the space, be deflated in the reception room, so produce air-flow in the space, the foreign matter of disengaging is discharged from from the space by this air-flow, and then is deflated from reception room.Thereby, wounded substrate and fully remove the foreign matter at the back side that is attached to substrate not.
If with technical scheme 11 described substrate-cleaning methods, then because when in producing above-mentioned space and reception room, being depressurized, gas is imported in the reception room, so produce the shock wave of advancing in reception room, the foreign matter that is attached to the back side of substrate breaks away to the space by this shock wave.Thereby, wounded substrate and remove the foreign matter at the back side be attached to substrate expeditiously not.
If with technical scheme 12 described substrate-cleaning methods, then because voltage puts on electrode discontinuously, so repeatedly to the voltage application of substrate.Whereby, the stress repetition of static acts on the back side of substrate.Thereby, can remove the foreign matter at the back side that is attached to substrate more fully.
If with technical scheme 13 described substrate-cleaning methods, then because the different voltage of polarity alternatively applies, so can prevent the charged of substrate.If substrate is charged, then the electric stress that acts on the back side of substrate by voltage application reduces.Thereby, by preventing the charged of substrate, can prevent to be attached to the reduction of removal efficient of foreign matter at the back side of substrate.
If with technical scheme 14 described substrate-cleaning methods, during then because of generation space between mounting table and substrate, voltage puts on substrate, and the stress of static is in the back side of substrate so produce electrostatic field in above-mentioned space.Whereby, be attached to the foreign matter disengaging at the back side of substrate.And then because when being depressurized in producing space and reception room, gas imports in the reception room, so produce the shock wave of advancing in reception room, the foreign matter that is attached to the back side of substrate leans on this shock wave to break away to the space.In addition, because when producing above-mentioned space, gas supplies to the space, is deflated in the reception room, so produce air-flow in the space, the foreign matter of disengaging is discharged from the space by this air-flow, and then exhaust from reception room.Thereby, wounded substrate and fully remove the foreign matter at the back side that is attached to substrate not.
Description of drawings
Fig. 1 is the sectional view of expression as the summary formation of the plasma processing apparatus of the base plate cleaning device of first embodiment of the invention.
Fig. 2 is the precedence diagram of practiced substrate clean in the plasma processing apparatus of Fig. 1.
Fig. 3 figure that to be expression constitute as the summary of the knock-out pin in the plasma processing apparatus of second embodiment of the invention base plate cleaning device.
Fig. 4 is the sectional view of expression according to the summary formation of the base plate cleaning device of the 3rd execution mode of the present invention.
Fig. 5 is the figure that the summary of the base plate processing system that substrate board treatment disposed of presentation graphs 4 constitutes.
Fig. 6 is the figure from the situation of the removal particle at the back side of wafer that schematically represents in the embodiments of the invention, Fig. 6 (a) be schematically be illustrated in valve V1 and open during, to battery lead plate 20 apply alternately repeatedly+2kV and-figure of the situation of the space S of the occasion of the voltage of 2kV, Fig. 6 (b) schematically represents to begin figure through the situation of the space S after the several seconds from Fig. 6 (a), and Fig. 6 (c) schematically represents to begin figure through the situation of the space S after the several seconds from Fig. 6 (b).
Fig. 7 is the curve of observed result of the removal of the particle of expression in the embodiments of the invention.
Fig. 8 be represent always be used for wafer is implemented the figure that the summary of the plasma processing apparatus of etch processes constitutes.
Symbol description: 1,56 plasma processing apparatus; 10,43 chambers; 11 pedestals; 12,65 exhaust line; 13 dividing plates; 14APC (automatic pressure control valve); 15TMP (turbomolecular pump); 16,46DP (dry pump); 17,45 blast pipes; 18 high frequency electric sources; 19 adaptations; 20,35,47 battery lead plates; 22,41,48 DC power supply; 24 gathering rings; 25 cooling medium chambers; 26 pipe arrangements; 27 heat-conducting gas supply holes; 28 heat-conducting gas supply lines; 29 heat-conducting gas supply pipes; 30,40 knock-out pins; 31,52 move into and take out of mouth; 32,53 families of power and influence; 33 shower heads; 34 air vent holes; 36 electrode supports; 37 surge chambers; 38 handle gas introduction tube; 39 magnet; 42 base plate cleaning devices; 44 workbench; 49 gas supply holes; 50 gas supply lines; 51 pins; 54 gas introduction tubes; 55 base plate processing systems; 57,62 carrying arms; 58 load locking rooms; 59 treating stations; 60 load ports; 61 orientation devices; 63 load units; 64 gas supply pipes.
Embodiment
Below, describe with regard to embodiments of the present invention with reference to accompanying drawing.
At first, just the plasma processing apparatus as the base plate cleaning device of first embodiment of the invention describes in detail.
Fig. 1 is the sectional view of expression as the summary formation of the plasma processing apparatus of the base plate cleaning device of first embodiment of the invention.
In Fig. 1, the plasma processing apparatus 1 that is constituted as the etch processes device of wafer W being implemented etch processes has metallic, for example, the cylindrical cavity of aluminium or stainless steel (reception room) 10, in this chamber 10, be provided with columniform pedestal (mounting table) 11 as the workbench of mounting wafer W.
Between the sidewall and pedestal 11 of chamber 10, form exhaust line 12 outside chamber 10 as the stream performance function that the gas of pedestal 11 tops is discharged.At the baffle plate that disposes ring-type midway 13 of this exhaust line 12, exhaust line 12 than baffle plate 13 and in the spatial communication in downstream in automatic pressure control valve (automatic pressure controlvalve) (hereinafter referred to as ' APC ') 14 as the type variable butterfly valve.APC 14 is connected in as vacuumizing the turbomolecular pump (hereinafter referred to as ' TMP ') 15 of the exhaust pump of usefulness, and then, be connected in dry pump (hereinafter referred to as ' DP ') 16 via TMP 15 as exhaust pump.Though following handle calls ' main discharge pipe line ' by the exhaust flow path that APC 14, TMP 15 and DP 16 are constituted, this main discharge pipe line not only by APC 14 carry out in the chamber 10 pressure control and also by TMP 15 and DP16 the almost vacuum state that reduces pressure in the chamber 10.
In addition, the space that is in the downstream than dividing plate 13 of above-mentioned exhaust line 12 is connected in the exhaust flow path (hereinafter referred to as ' thick discharge pipe line ') (exhaust apparatus) that separates with main discharge pipe line.This thick discharge pipe line is communicated with DP 16 with above-mentioned space.Have diameter for example for the blast pipe 17 of 25mm be located at the valve V2 midway of blast pipe 17.This valve V2 can cut off above-mentioned space and DP 16.The air that thick discharge pipe line is discharged in the chamber 10 by DP 16.
On pedestal 11, the high frequency electric source 18 that plasma generates usefulness is connecting on electric via adaptation 19.This high frequency electric source 18 is the high frequency of regulation, and for example, the High frequency power of 13.56MHz puts on pedestal 11.Whereby, pedestal 11 is as lower electrode performance function.
In the inner and upper of pedestal 11, disposing the discoid battery lead plate of forming by conducting film 20 of using Electrostatic Absorption power absorption wafer W.Be connected in battery lead plate 20 on DC power supply 22 is electric.
Wafer W by the Coulomb force that produces because of the direct voltage that puts on battery lead plate 20 from DC power supply 22 or Johnson-La Bieke (Johnsen-Rahbek) power adsorb remain in pedestal 11 above.In addition, the circular gathering ring of being made by silicon (Si) etc. 24 is assembled the plasmas that produce above pedestal 11 to wafer W.
In addition, in the inside of pedestal 11, for example, be provided with the cooling medium chamber 25 of the ring-type that prolongs in a circumferential direction.In this cooling medium chamber 25, from the coolant of cooling unit (not shown) via pipe arrangement 26 circulation supply set points of temperature, for example, and cooling water, the treatment temperature of the wafer W on the pedestal 11 is controlled by the temperature of this coolant.
On pedestal 11 on the part of absorption wafer W, perforate a plurality of heat-conducting gas supply holes (gas supply device) 27.These heat-conducting gas supply holes 27 are via the heat-conducting gas supply line 28 that is disposed at pedestal 11 inside, be communicated in the heat-conducting gas supply pipe 29 of valve V3, heat-conducting gas from the heat-conducting gas supply unit (not shown) that is connected in heat-conducting gas supply pipe 29, for example, He gas supplies to the gap between the back side of top and wafer W of pedestal 11.Whereby, the heat transmitting of wafer W and pedestal 11 improves.Moreover valve V3 can cut off heat-conducting gas supply hole 27 and heat-conducting gas supply unit.
In addition, on pedestal 11, on the part of absorption wafer W, disposing a plurality of knock-out pins (separating device) 30 as outstanding lifting pin freely above pedestal 11.These knock-out pins 30 are transformed into rectilinear motion by rotatablely moving of motor (not shown) by ball-screw etc., and upper and lower moves up in the drawings.Be adsorbed when remaining in above the pedestal 11 in wafer W, knock-out pin 30 is accommodated in pedestal 11, when taking out of the wafer W that plasma processing such as implementing etch processes finishes from chamber 10, knock-out pin 30 is outstanding and wafer W is left upwards from pedestal 11 lift above pedestal 11.At this moment, on pedestal 11 and between the back side of wafer W, form space S.
On the sidewall of chamber 10, be installed with and open and close the family of power and influence 32 that moving into of wafer W taken out of mouth 31.In addition, on the top, chamber of chamber 10, disposing the shower head 33 that is in earthing potential as upper electrode.Whereby, the high frequency voltage from high frequency electric source 18 puts between pedestal 11 and the shower head 33.
The shower head 33 at top, chamber comprises following battery lead plate 35 with a plurality of air vent holes 34 and the electrode support 36 that can support this battery lead plate 35 with installing and removing.In addition, be provided with surge chamber 37, be connected in this surge chamber 37 from the processing gas introduction tube 38 of handling gas supply part (not shown) in the inside of this electrode support 36.That regulates the flow of vital energy body ingress pipe 38 herein is disposing valve V1 midway.This valve V1 can cut off surge chamber 37 and handle gas supply part.In addition, around chamber 10, disposing the magnet 39 that ring-type or concentric shape ground prolong.
In the chamber 10 of this plasma processing unit 1, form horizontal magnetic field by magnet 39 towards certain orientation, and by putting on the RF electric field of the high frequency voltage formation vertical direction between pedestal 11 and the shower head 33, whereby, in chamber 10, carry out magnetron discharge, generate highdensity plasma by handling gas at the near surface place of pedestal 11 via handling gas.
In this plasma processing unit 1, when etch processes, 32 one-tenth open modes of the family of power and influence are moved into the wafer W of processing object in the chamber 10, mounting is on pedestal 11.Then, from shower head 33 with the flow of regulation and flow-rate ratio handling gas (for example, the flow rate ratio of regulation by C
4F
8Gas, O
2The mist of gas and Ar gas composition) imports in the chamber 10, make the pressure in the chamber 10 become setting by APC 14 grades.And then, from high frequency electric source 18 High frequency power is supplied to pedestal 11, from DC power supply 22 direct voltage is put on battery lead plate 20, wafer W is adsorbed on the pedestal 11.Then, the processing gas that is sprayed from shower head 33 plasmaization as mentioned above.Free radical that is generated in this plasma or ion are gathered in the surface of wafer W, the surface of etched wafer W by gathering ring 24.
In above-mentioned plasma processing apparatus 1, in the middle of the plasma that is generated, the surperficial person who is not gathered in wafer W is clashed into the inwall of chamber 10 etc. and is produced particle.In the middle of the particle that produces, the particle packing of being discharged by main discharge pipe line or thick discharge pipe line is not above pedestal 11.This is piled up in top particle, when the wafer W mounting is above pedestal 11, is attached to the back side of wafer W as foreign matter.Be adapted to this, in plasma processing apparatus 1, after wafer W is implemented etch processes, wafer W left and when producing space S, high voltage puts on battery lead plate 20, N above pedestal 11 by knock-out pin 30
2Gas etc. supply to space S from heat-conducting gas supply hole 27, lean on thick discharge pipe line exhaust in the chamber 10.And then, in chamber 10,, in chamber 10, import processing gas from shower head 33 by during the thick discharge pipe line decompression.Whereby, the particle that is attached to the back side of wafer W is discharged from.Below, just practiced in plasma processing apparatus 1, the substrate-cleaning method of getting rid of the particle at the back side that is attached to wafer W describes.
Fig. 2 is the precedence diagram of practiced substrate clean in the plasma processing apparatus of Fig. 1.This substrate clean is carried out after wafer W is implemented etch processes.
In Fig. 2, this handles practiced precondition is that wafer W is implemented etch processes and the mounting state above pedestal 11, and voltage does not put on battery lead plate 20 (HV 0), and APC14 opens (APC OPEN) and TMP 15 actions.That is to say, be to reduce pressure (vacuumizing) by main discharge pipe line in the chamber 10, and valve V1～V3 all closes the state of (V1 CLOSE, V2 CLOSE, V3 CLOSE).
At first, (PIN DOWN) knock-out pin 30 that is contained in pedestal 11 makes wafer W leave from pedestal 11 and upwards lifts (PIN UP).At this moment, though the height that knock-out pin 30 lifts wafer W from pedestal 11 restriction, preferably 10～20mm especially.Whereby, on pedestal 11 and between the back side of wafer W, form space S.
Then, APC14 closes (APC CLOSE), and the valve V3 of the valve V2 of blast pipe 17 and heat-conducting gas supply pipe 29 opens (V2 OPEN, V3 OPEN), heat-conducting gas supply hole 27 to the back side of the wafer W of lifting N
2Gas is ejected into space S, and thick discharge pipe line is the N that is ejected into space S
2Gas remaining gas in chamber 10 is discharged outside chamber 10.Whereby, in space S, produce from the back side of wafer W to the peripheral part of pedestal 11 and flow the viscous flow that gas viscosity power is big.At this moment, because if be that then viscous flow is easy to generate more than the pressure of regulation in the chamber 10, so thick discharge pipe line is discharged the N in the chamber 10
2Gas etc., so that the pressure in the chamber 10 is not less than the pressure of regulation, for example, and 133Pa (1torr), preferably, the pressure in the chamber 10 is maintained at the pressure limit of regulation, for example, 1.33 * 10
3～1.33 * 10
4Pa (10～100torr) scope.Whereby, can in space S, produce viscous flow reliably.Viscous flow is involved in the particle that breaks away from from the back side of wafer W described later and the gas in chamber 10 is discharged from chamber 10.
Then, DC power supply 22 is the different high voltage of polarity, for example ,+500V and-voltage of 500V alternatively put on battery lead plate 20 (HV+500, HV-500).At this moment, result from the high-tension of battery lead plate 20 applied, in chamber 10, particularly, in space S, produce electrostatic field, the stress of static, for example, maxwell (Maxwell) stress is in the back side of wafer W.Whereby, the adhesive force of particle that is attached to the back side of wafer W weakens, and this particle breaks away from.The particle of this disengaging is discharged to from space S outside the chamber 10 by above-mentioned viscous flow.The stress of above-mentioned static acts on the back side of wafer W to high-tension the applying of battery lead plate 20 time and when stopping effectively.Here, in plasma processing apparatus 1 because high-tension the applying repeatedly of battery lead plate 20 carried out, thus the stress repetition of effective static act on the back side of wafer W.Thereby, can remove the particle at the back side that is attached to wafer W more fully.
Alternatively the absolute value of the voltage that battery lead plate 20 is applied is preferred big, for example, and more than the 500V, preferably, more than the 2kV.Whereby, the stress of the static at the back side that acts on wafer W can be strengthened, the disengaging of particle can be carried out reliably.
In addition, if carry out repeatedly the high-tension of same polarity of battery lead plate 20 applied, battery lead plate 20 charged (charging) then, the result, the stress of static that acts on the back side of wafer W reduces, and the removal efficient of particle that is attached to the back side of wafer W sometimes reduces.In plasma processing apparatus 1,,, can prevent to be attached to the reduction of removal efficient of particle at the back side of wafer W so battery lead plate 20 can be not charged because battery lead plate 20 is alternatively applied the different high voltage of polarity.
Moreover as mentioned above, the effective function of the stress of above-mentioned static is related to the high-tension number of times that applies to battery lead plate 20, and is little with the high-tension application time relation to battery lead plate 20.Thereby, also can be to the high-tension application time of battery lead plate 20 for for example below 1 second.
To the polarity of battery lead plate 20 during different high-tension mutual the applying, the valve V1 that handles gas introduction tube 38 opens (V1 OPEN) above-mentioned, and replace handling gases from shower head 33 and in chamber 10, import non-active gas, for example, N
2Gas.At this moment,, rise so under shower head 33, produce rapid pressure because reduce pressure by thick discharge pipe line in the chamber 10, whereby, the N that is imported
2Gas generates the shock wave of advancing, and the shock wave of advancing that is generated reaches the wafer W of lifting.As a result, impulsive force is added on the wafer W, and the particle that is attached to the back side of wafer W breaks away from.Also be that the particle of disengaging is discharged outside chamber 10 from space S by above-mentioned viscous flow this moment.
Moreover, in plasma processing apparatus 1, in order to carry out N effectively
2Pressure under the shower head 33 in the chamber 10 when gas imports rises, in handling gas introduction tube 38 preferably in valve V1 downstream configuration section orifice structure, for example, volume control device (mass flow controller) or deceleration valve.
Then, the state of opening at the valve V1 that handles gas introduction tube 38 (V1 OPEN), stipulated number has been carried out in high-tension mutual the applying that the polarity of battery lead plate 20 is different, for example, after 4 times, the valve V1 that handles gas introduction tube 38 closes (V1 CLOSE), APC 14 opens (APC OPEN), and the valve V2 of blast pipe 17 and the valve V3 of heat-conducting gas supply pipe 29 close (V2 CLOSE, V3 CLOSE), and this processing finishes.
Though the above-mentioned wafer W of having implemented the substrate clean is taken out of mouthfuls 31 and is taken out of from chamber 10 via moving into, to transfer chamber, for example, load locking room is moved into, but, can not polluted by particle so load-lock is indoor owing to fully removed the particle at the back side that is attached to wafer W.
If use above-mentioned substrate-cleaning method, during then because of generation space S between pedestal 11 and wafer W, the high voltage that polarity is different alternatively puts on battery lead plate 20, the stress of static is in the back side of wafer W so produce electrostatic field in above-mentioned space S, and then, when in producing above-mentioned space S and chamber 10, leaning on thick discharge pipe line to reduce pressure, because N
2Gas is imported into chamber 10, so produce the shock wave of advancing in chamber 10, the shock wave of advancing that is generated is added on the wafer W impulsive force.Whereby, the particle that is attached to the back side of wafer W breaks away to space S.Thereby, because the sputter that in the disengaging of particle, does not need the ion of plasma to cause, or the chemical reaction that causes of free radical, so damage wafers W not.
In addition, because when producing above-mentioned space S, N
2Gas is ejected into space S from heat-conducting gas supply hole 27, is ejected into the N of this space S
2Gas is discharged outside chamber 10 by thick discharge pipe line, so produce N in space S
2The viscous flow of gas.The particle that breaks away from is involved in above-mentioned viscous flow and discharges outside chamber 10 from space S.
Thereby, damage wafers W and remove the particle at the back side be attached to wafer W fully not.
In above-mentioned plasma processing apparatus 1, though by the N in the thick discharge pipe line discharge chamber 10
2Gas etc. still also can not lean on thick discharge pipe line so that the pressure in the chamber 10 is not less than the pressure of regulation, and lean on main discharge pipe line by the aperture that reduces APC 14, discharge the N in the chamber 10
2Gas etc. are so that the pressure in the chamber 10 is not less than the pressure of regulation, even also can produce viscous flow in space S by means of this.
In addition, the present invention is not only applicable to the plasma processing apparatus that constitutes as the etch processes device, can apply to other plasma processing apparatus yet, for example, and as CVD device or cineration device and the plasma processing apparatus that constitutes.
Next, the plasma processing apparatus with regard to conduct base plate cleaning device second embodiment of the invention describes in detail.
Because as plasma processing apparatus second embodiment of the invention, its formation, effect and above-mentioned first execution mode are same basically, so just explanation is omitted in the formation that repeats, effect, below carries out with regard to different formations, the explanation of effect.
Though in the plasma processing apparatus of conduct according to the base plate cleaning device of second execution mode, same with first execution mode, leave above pedestal 11 by knock-out pin 40 described later and when producing space S in wafer W, produce electrostatic field and the stress of static in the back side of wafer W, but do not result from the high-tension of battery lead plate 20 do not applied at electrostatic field, and result from apply on this point by 40 pairs of wafer W of knock-out pin high-tension different with first execution mode.
Fig. 3 is the figure of expression conduct according to the summary formation of the knock-out pin in the plasma processing apparatus of the base plate cleaning device of second execution mode.
In Fig. 3, the clava that knock-out pin 40 is made up of electric conductor, an end that is contacted with the back side of wafer W forms hemispherical, is connected in DC power supply 41 on the other end is electric.In addition, though the surface of knock-out pin 40, in order to prevent discharge from this surface, preferably by dielectric etc. cover, the surface of a hemispheric end, for wafer W being applied high voltage, conductor exposes.Knock-out pin 40 is transformed into rectilinear motion by rotatablely moving of motor (not shown) by ball-screw etc., and upper and lower moves up in the drawings.
In addition, a plurality of knock-out pins 40 place on pedestal 11 is disposed at the part of absorption wafer W.And knock-out pin 40 is outstanding and make wafer W leave pedestal 11 upwards to lift above pedestal 11.At this moment, same with first execution mode, on pedestal 11 and between the wafer W, form space S.
In the plasma processing apparatus of conduct according to the base plate cleaning device of second execution mode, after wafer W execution etch processes, leave above the pedestal 11 by knock-out pin 40 and when producing space S, high voltage puts on wafer W via knock-out pin 40 from DC power supply 41, N in wafer W
2Gas supplies to space S from heat-conducting gas supply hole 27, leans on thick discharge pipe line exhaust in the chamber 10.And then, in chamber 10,, in chamber 10, import processing gas from shower head 33 by during the thick discharge pipe line decompression.
In addition, as practiced substrate-cleaning method in according to the plasma processing apparatus of the base plate cleaning device of second execution mode, though replacing the different high voltage of polarity alternatively to put on battery lead plate 20, via knock-out pin 40, the high voltage that polarity is different alternatively puts on the wafer W this point different with first execution mode, but in space S, produce electrostatic field, the stress of static is in the back side of wafer W, the adhesive force of particle that is attached to the back side of wafer W weakens, the situation that this particle breaks away from, with first execution mode be same.
In addition, for example more than the 500V, more than the preferred 2kV, high-tension application time can be for below 1 second for the high voltage that puts on wafer W through knock-out pin 40, and this is identical with execution mode 1.
If use above-mentioned substrate-cleaning method, during then because of generation space S between pedestal 11 and wafer W, via knock-out pin 40, the high voltage that polarity is different alternatively puts on wafer W, the stress of static is in the back side of wafer W so produce electrostatic field in above-mentioned space S, and then, when in producing above-mentioned space S and chamber 10, leaning on thick discharge pipe line to reduce pressure, because N
2Gas is imported into chamber 10, so produce the shock wave of advancing in chamber 10, the shock wave of advancing that is generated is added on the wafer W impulsive force.Whereby, the particle that is attached to the back side of wafer W breaks away to space S.Thereby, because the sputter that in the disengaging of particle, does not need the ion of plasma to cause, or the chemical reaction that causes of free radical, so damage wafers W not.
In addition, because when producing above-mentioned space S, N
2Gas is ejected into space S from heat-conducting gas supply hole 27, is ejected into the N of this space S
2Gas is discharged outside chamber 10 by thick discharge pipe line, so produce N in space S
2The viscous flow of gas.The particle that breaks away from is involved in above-mentioned viscous flow and discharges outside chamber 10 from space S.
Thereby, damage wafers W and remove the particle at the back side be attached to wafer W fully not.
Next, just describe in detail as base plate cleaning device according to the 3rd execution mode of the present invention.
According to the substrate board treatment of the 3rd execution mode, wafer W is not being implemented plasma treatment, only carry out on the cleaning this point at the back side of wafer W, different with above-mentioned first and second execution modes.
Fig. 4 is the sectional view of expression according to the summary formation of the base plate cleaning device of the 3rd execution mode of the present invention.
In Fig. 4, base plate cleaning device 42 has for example chamber 43 of the case shape of aluminium or stainless steel of metallic, in this chamber 43, is disposing the columned workbench 44 of mounting wafer W.
Between the sidewall and workbench 44 of chamber 43, form exhaust line 65 outside chamber 43 as the stream performance function that the gas of workbench 44 tops is discharged.This exhaust line 65 is connected in thick discharge pipe line.This thick discharge pipe line makes exhaust line 65 be communicated with DP 46 as exhaust pump, has diameter for example for the blast pipe 45 of 25mm be arranged at the valve V5 midway of blast pipe 45.This valve V5 can cut off exhaust line 65 and DP 46.The gas that thick discharge pipe line is discharged in the chamber 43 by DP 46.
In the inner and upper of workbench 44, disposing the discoid battery lead plate of forming with the conducting film of Electrostatic Absorption power absorption wafer W by being used for 47, be connected in battery lead plate 47 on DC power supply 48 is electric.Wafer W by the Coulomb force that produces because of the direct voltage that puts on battery lead plate 47 from DC power supply 48 adsorb remain in workbench 44 above.
On the part of absorption wafer W, a plurality of gas supply holes 49 in perforate on workbench 44.These gas supply holes 49 are communicated in the gas supply pipe 64 with valve V6 via being disposed at workbench 44 gas inside supply lines 50, the gas from first gas supply part (not shown) that is connected in gas supply pipe 64, for example N
2Gas supplies to the gap at the back side of the top and wafer W of workbench 44.Moreover valve V6 can cut off the gas supply hole 49 and first gas supply part.
In addition, on workbench 44, on the part of absorption wafer W, disposing a plurality of pins 51 outstanding above workbench 44.Pin 51 lifts the wafer W of moving in the chamber 43 and makes it to leave from workbench 44.At this moment, on workbench 44 and between the back side of wafer W, form space S.These pins 51 and knock-out pin 30 equally also in the drawings upper and lower move up.
On the sidewall of chamber 43, be installed with and open and close the family of power and influence 53 that moving into of wafer W taken out of mouth 52.In addition, on the top, chamber of chamber 43, connecting from second gas supply part (not shown) and in chamber 43, importing for example N of gas
2The gas introduction tube 54 of gas.Disposing valve V4 midway at this gas introduction tube 54.This valve V4 can cut off in the chamber 43 and second gas supply part.
This base plate cleaning device 42 for example, is disposed at parallel base plate processing system, removes to be attached to the particle at the back side that the plasma processing apparatus described later 56 that is had by this base plate processing system has been implemented the wafer W of plasma treatment.
Fig. 5 is the figure that the summary of the base plate processing system that substrate board treatment disposed of presentation graphs 4 constitutes.
In Fig. 5, base plate processing system 55 has: by the plasma processing apparatus 56 of etch processes wafer W with disposed wafer W is joined the treating stations 59 that is constituted in the ring-like load locking room 58 that individual picks up the carrying arm 57 of formula of this plasma processing unit 56, accommodate the load port 60 of the mounting case that stores a collection of wafer W, align the orientation device 61 of wafer W in advance, aforesaid substrate cleaning device 42, and as the public carrying channel of rectangle, disposed the load unit 63 of the double-arm carrying arm 62 of joint type.Though treating stations 59, load port 60, orientation device 61 and base plate cleaning device 42 can be connected in load unit 63 with installing and removing, but base plate cleaning device 42 is disposed at an end relevant with the long side direction of load unit 63, and is relative with orientation device 61 via load unit 63.
In this base plate processing system 55, in plasma processing apparatus 56, implemented the wafer W of plasma treatment, move into base plate cleaning device 42 by the carrying arm 62 in carrying arm 57 in the load locking room 58 and the load unit 63.Base plate cleaning device 42 is carried out substrate-cleaning method described later and is removed the particle at the back side that is attached to wafer W.
Below, just practiced substrate-cleaning method describes in base plate cleaning device 42.
The practiced precondition of this substrate-cleaning method is that wafer W is implemented etch processes and the mounting state above workbench 44, and voltage does not put on battery lead plate 47, and valve V4～V6 is closing state all.
At first, to wafer W mounting that chamber 43 is moved on pin outstanding above workbench 44 51.At this moment, pin 51 lifts wafer W from workbench 44 height, same with first execution mode, be that 10～20mm is just passable.Whereby, on workbench 44 and between the back side of wafer W, form space S.
Then, the family of power and influence 53 closes, and the valve V6 of the valve V5 of blast pipe 45 and gas supply pipe 64 opens, gas supply hole 49 to the back side of the wafer W of lifting N
2Gas is ejected into space S, and thick discharge pipe line is the N that is ejected into space S
2Gas is discharged outside chamber 43.Whereby, in space S, produce the N that flows to the peripheral part of workbench 44 from the back side of wafer W
2The viscous flow of gas.At this moment, same with first execution mode, the thick discharge pipe line of mode that is not less than the pressure of regulation according to the pressure in the chamber 43 is discharged the N in the chamber 43
2Gas.Viscous flow is involved in the particle that breaks away from from the back side of wafer W described later and discharges from chamber 43.
Then, DC power supply 48 alternatively puts on battery lead plate 47 to the different high voltage of polarity.At this moment, produce electrostatic field in space S, the stress of static is in the back side of wafer W, and the adhesive force of particle that is attached to the back side of wafer W weakens, and this particle breaks away from, with first execution mode be same.Then, the particle of disengaging is discharged to from space S outside the chamber 43 by above-mentioned viscous flow.
And then, the high voltage that battery lead plate 47 is applied, for example, more than the 500V, preferably, more than the 2kV.And high-tension application time, for example also can be that the situation and first execution mode below 1 second is same.
To the polarity of wafer W during different high-tension mutual the applying, the valve V4 of gas introduction tube 54 opens N above-mentioned
2Gas imports in the chamber 43 from gas introduction tube 54.At this moment, because in the chamber 43 by thick discharge pipe line decompression, so under the top, chamber of chamber 43, produce rapid pressure rising, the N that is imported
2Gas generates the shock wave of advancing, and impulsive force is because of the shock wave of advancing that is generated is added on the wafer W, and the particle that is attached to the back side of wafer W breaks away from, with first execution mode be same.Also be that the particle of disengaging is discharged outside chamber 43 from space S by above-mentioned viscous flow this moment.Moreover, same with first execution mode in base plate cleaning device 42, in gas introduction tube 54 preferably in valve V4 downstream configuration section orifice structure.
Then, the state of opening at the valve V4 of gas introduction tube 54, high-tension mutual the applying that the polarity of wafer W is different carried out behind the stipulated number, and the valve V6 of the valve V4 of gas introduction tube 54, the valve V5 of blast pipe 45 and gas supply pipe 64 closes, and this processing finishes.Though the above-mentioned wafer W of having implemented the substrate clean is taken out of mouthfuls 52 and is taken out of from chamber 43 via moving into, move into to load unit 63 or load port 60, but owing to fully removed the particle at the back side that is attached to wafer W, so can not polluted in load unit 63 or the load port 60 by particle.
If use above-mentioned substrate-cleaning method, during then because of generation space S between workbench 44 and wafer W, the high voltage that polarity is different alternatively puts on wafer W, the stress of static is in the back side of wafer W so produce electrostatic field in above-mentioned space S, and then, when in producing above-mentioned space S and chamber 43, leaning on thick discharge pipe line to reduce pressure, because N
2Gas is imported into chamber 43, so produce the shock wave of advancing in chamber 43, the shock wave of advancing that is generated is added on the wafer W impulsive force.Whereby, the particle that is attached to the back side of wafer W breaks away to space S.Thereby, because in the disengaging of particle, do not need plasma, so damage wafers W not.
In addition, because when producing above-mentioned space S, N
2Gas is ejected into space S from gas supply hole 49, is ejected into the N of this space S
2Gas is discharged outside chamber 43 by thick discharge pipe line, so produce N in space S
2The viscous flow of gas.The particle that breaks away from is involved in above-mentioned viscous flow and discharges outside chamber 43 from space S.
Thereby, damage wafers W and remove the particle at the back side be attached to wafer W fully not.
In aforesaid substrate cleaning device 42, though base plate cleaning device 42 has DP46 alone, also can base plate cleaning device 42 and plasma processing apparatus 56 total DP, whereby, can simplify the formation of base plate processing system 55.
Though in the above-described embodiment, with regard to the occasion of plasma processing apparatus as base plate cleaning device performance function, or the occasion that special-purpose base plate cleaning device is set is illustrated, but constitute other devices of base plate processing system, also can be used as according to base plate cleaning device performance function of the present invention.
For example, in the occasion of load locking room as substrate board treatment performance function according to the present invention, this load locking room has: carrying arm, give the exhaust apparatus of load locking room exhaust, and the indoor gas gatherer of gas importing load-lock, carrying arm preferably includes from the outstanding pin of wafer mounting surface, produces the electrode of electrostatic field and the gas injection apparatus that sprays gas to the back side between wafer W and wafer mounting surface.Indoor at this load-lock, lifted and when producing space S, high voltage puts on electrode from the wafer mounting surface by pin in wafer W, gas sprays to the back side of wafer W, and load-lock is indoor by the exhaust apparatus exhaust.And then, load-lock is indoor be deflated device decompression during, from the gas gatherer to the indoor importing gas of load-lock.
Embodiment
Next, specifically describe embodiments of the invention.
Following embodiment carries out in above-mentioned plasma processing apparatus 1.
At first, prepare the wafer W that particle is attached to the back side in large quantities, on the knock-out pin 30 from pedestal 11 given prominence to of this wafer W mounting in chamber 10 in.
Then, make in the chamber 10 after the decompression, close APC 14, and open the valve V2 of blast pipe 17 and the valve V3 of heat-conducting gas supply pipe 29 by main discharge pipe line, on one side give exhaust stably in the chamber 10, on one side from heat-conducting gas supply hole 27 N
2Gas is to the ejection of the back side of wafer W.Whereby, Yi Bian make in the chamber 10 and remain in 6.65 * 10
3More than the Pa (50torr), in space S produce viscous flow on one side.
Then, open valve V1 with flow 7.0 * 10
4SCCM is N
2Gas imports in the chamber 10.During valve V1 opens, to battery lead plate 20+2kV and-the applying alternately 6 times repeatedly of the voltage of 2kV, then, shut off valve V1.And then, once more, open valve V1 with flow 7.0 * 10
4SCCM is N
2Gas imports in the chamber 10, during valve V1 opens, to battery lead plate 20+the applying alternately 5 times repeatedly of the voltage of 2kV and-2kV, then, shut off valve V1.At this moment, laser radiation in space S, is resulted from the stray light of particle by being observed by ccd video camera shooting.The situation of the stray light of being made a video recording is shown in Fig. 6.
Fig. 6 (a) be schematically be illustrated in valve V1 and open during, to battery lead plate 20+2kV and-figure of the situation of the space S that applies occasion repeatedly alternately of the voltage of 2kV.Here, particle is by the N because of being imported
2Gas and the shock wave and because of the stress that applies the static that produces alternately of the voltage back side from wafer W breaks away from large quantities of advancing that produces, the particle that observes disengaging becomes the situation of a group L.
Fig. 6 (b) is the figure that schematically represents to begin from Fig. 6 (a) situation of the space S of process after several seconds.Here, in space S, observe the situation of a group L because of discharging from space S to the mobile viscous flow of the peripheral part of pedestal 11 of particle from the back side of wafer W.
Fig. 6 (c) is the figure that schematically represents to begin from Fig. 6 (b) situation of the space S of process after several seconds.Here, observe the situation that a group L of particle gets rid of fully from space S.
The curve that gathers these observed results is shown in Fig. 7.
In Fig. 7, transverse axis is the time, and the longitudinal axis is represented number, magnitude of voltage and the force value of particle.In addition, V
EExpression puts on the voltage of battery lead plate 20, V
WExpression is because of V
EAnd the voltage that causes in wafer W.P represents the pressure in the chamber 10.And then the each point of being drawn among the figure is illustrated in the number of the particle that each observation time observes.Moreover it is the part that chamber 10 interior pressure exceed measurable range that the value of P becomes constant part.
As seen from Figure 7, just open and N at valve V1
2After gas imported in the chamber 10 in large quantities, particle broke away from from the back side of wafer W in large quantities because of the shock wave of advancing that produces, and then particle is by further breaking away from the applying alternately of voltage of battery lead plate 20 repeatedly.Whereby as can be seen, pass through N
2Gas in chamber 10 a large amount of importings and the particle at the back side that is attached to wafer W that can make repeatedly that applies alternately of above-mentioned voltage break away from fully.And then as can be seen, because at secondary N
2So a large amount of importings of gas in chamber 10 and the middle repeatedly particle minimizing that breaks away from that applies alternately of above-mentioned voltage are by carrying out N one time
2A large amount of importings and alternately the applying repeatedly of above-mentioned voltage of gas in chamber 10 can make particle break away from effectively.
In addition, though by be located at simultaneously thick discharge pipe line midway, utilize the particle monitor of laser scattering method to observe the particles of being discharged in the chamber 10 via thick discharge pipe line, can obtain the observed result same with Fig. 7.Viscous flow is discharged the particle that breaks away from effectively in chamber 10 as can be seen whereby.
Claims (14)
1. a base plate cleaning device is characterized in that, has
Accommodate the reception room of substrate;
Be disposed in this reception room the mounting table of the described substrate of mounting;
Be disposed at this mounting table, make described substrate be adsorbed in the electrode of described mounting table when applying voltage;
To carrying out the exhaust apparatus of exhaust in the described reception room;
This mounting table and described substrate are left and between described mounting table and described substrate, produce the separating device in space; With
Gas is supplied to the gas supply device in described space,
When producing described space, voltage puts on described electrode, and described gas supply device supplies to described space to gas, and described exhaust apparatus carries out exhaust to described reception room.
2. base plate cleaning device as claimed in claim 1 is characterized in that,
Also have and in described reception room, be depressurized and when producing described space, gas is imported gas introduction part in the described reception room.
3. base plate cleaning device as claimed in claim 1 or 2 is characterized in that,
Voltage puts on described electrode discontinuously.
4. base plate cleaning device as claimed in claim 3 is characterized in that,
The voltage that polarity is different alternatively puts on described electrode.
5. base plate cleaning device as claimed in claim 4 is characterized in that,
The absolute value of described voltage is more than the 500V.
6. base plate cleaning device as claimed in claim 5 is characterized in that,
The absolute value of described voltage is more than the 2kV.
7. as each described base plate cleaning device in the claim 1 to 6, it is characterized in that,
Described exhaust apparatus remains in the pressure in the described reception room when producing described space
8. base plate cleaning device as claimed in claim 7 is characterized in that,
Described exhaust apparatus remains in 1.33 * 10 to the pressure in the described reception room when producing described space
3～1.33 * 10
4In the scope of Pa.
9. a base plate cleaning device is characterized in that, has
Accommodate the reception room of substrate;
Be disposed in this reception room the mounting table of the described substrate of mounting;
To carrying out the exhaust apparatus of exhaust in the described reception room;
This mounting table and described substrate are left and between described mounting table and described substrate, produce the space, and voltage is put on the separating device of described substrate with described substrate contacts;
Gas is supplied to the gas supply device in described space; With
In described reception room, import the gas introduction part of gas,
When producing described space, voltage puts on described substrate, described gas supply device supplies to described space to gas, described exhaust apparatus carries out exhaust to described reception room, and then, in described reception room, be depressurized and when producing described space, described gas introduction part imports gas in the described reception room.
10. a substrate-cleaning method is removed the foreign matter at the back side that is attached to substrate, it is characterized in that this method comprises
Substrate is contained in the step of accommodating of reception room;
The mounting step of described substrate-placing in the mounting table that is disposed at described reception room;
Described mounting table and described substrate are left so that between described mounting table and described substrate, produce the step of leaving in space;
When producing described space, the voltage that voltage is put on the electrode that is disposed at described mounting table applies step;
When producing described space, gas is supplied to the gas supplying step in described space; With
When producing described space, to carrying out the steps of exhausting of exhaust in the described reception room.
11. substrate-cleaning method as claimed in claim 10 is characterized in that,
Also be included in when being depressurized and producing described space in the described reception room, the gas that gas is imported in the described reception room imports step.
12. as claim 10 or 11 described substrate-cleaning methods, it is characterized in that,
Apply in the step at described voltage, voltage is put on described electrode discontinuously.
13. substrate-cleaning method as claimed in claim 12 is characterized in that,
Apply in the step at described voltage, the voltages different polarity alternatively put on described electrode.
14. a substrate-cleaning method is removed the foreign matter at the back side that is attached to substrate, it is characterized in that this method comprises:
Substrate is contained in the step of accommodating of reception room;
The mounting step of described substrate-placing in the mounting table that is disposed at described reception room;
Described mounting table and described substrate are left so that between described mounting table and described substrate, produce the step of leaving in space;
When producing described space, the voltage that voltage is put on described substrate applies step;
When producing described space, gas is supplied to the gas supplying step in described space;
When producing described space, to carrying out the steps of exhausting of exhaust in the described reception room; With
In described reception room, be depressurized and when producing described space, the gas that gas is imported in the described reception room imports step.
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|---|---|---|---|
| JP2004134174 | 2004-04-28 | ||
| JP2004134174A JP4450371B2 (en) | 2004-04-28 | 2004-04-28 | Substrate cleaning apparatus and substrate cleaning method |
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| CN1691288A true CN1691288A (en) | 2005-11-02 |
| CN100388430C CN100388430C (en) | 2008-05-14 |
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| JP (1) | JP4450371B2 (en) |
| KR (1) | KR100674735B1 (en) |
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| US8475602B2 (en) | 2008-10-27 | 2013-07-02 | Toyko Electron Limited | Substrate cleaning method and apparatus |
| CN104347358A (en) * | 2014-09-15 | 2015-02-11 | 上海华力微电子有限公司 | Method for improving plasma damage to device |
| CN110459493A (en) * | 2019-08-21 | 2019-11-15 | 北京北方华创微电子装备有限公司 | Vacuumize chamber and vacuum pumping method |
| CN113835299A (en) * | 2015-11-30 | 2021-12-24 | 应用材料公司 | Method and apparatus for post-exposure processing of photoresist wafers |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100790824B1 (en) * | 2006-05-30 | 2008-01-02 | 삼성전자주식회사 | Wafer loading and unloading method of semiconductor device manufacturing equipment |
| JP4940184B2 (en) | 2008-05-22 | 2012-05-30 | 株式会社日立ハイテクノロジーズ | Vacuum processing apparatus and vacuum processing method |
| JP2022180785A (en) | 2021-05-25 | 2022-12-07 | 東京エレクトロン株式会社 | Cleaning method and plasma processing device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5298720A (en) * | 1990-04-25 | 1994-03-29 | International Business Machines Corporation | Method and apparatus for contamination control in processing apparatus containing voltage driven electrode |
| US5858108A (en) * | 1996-07-15 | 1999-01-12 | Taiwan Semiconductor Manufacturing Company, Ltd | Removal of particulate contamination in loadlocks |
| AT405655B (en) * | 1997-03-26 | 1999-10-25 | Sez Semiconduct Equip Zubehoer | METHOD AND DEVICE FOR SINGLE-SIDED EDITING DISC-SHAPED OBJECTS |
| JPH11330056A (en) * | 1998-05-21 | 1999-11-30 | Hitachi Ltd | Method for cleaning electrode |
| JP4355046B2 (en) * | 1999-03-17 | 2009-10-28 | キヤノンアネルバ株式会社 | Cleaning method and substrate processing apparatus |
| JP4128344B2 (en) * | 2001-08-14 | 2008-07-30 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
-
2004
- 2004-04-28 JP JP2004134174A patent/JP4450371B2/en not_active Expired - Lifetime
-
2005
- 2005-04-20 TW TW094112570A patent/TW200535985A/en unknown
- 2005-04-27 KR KR1020050034866A patent/KR100674735B1/en active IP Right Grant
- 2005-04-28 CN CNB2005100679314A patent/CN100388430C/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8475602B2 (en) | 2008-10-27 | 2013-07-02 | Toyko Electron Limited | Substrate cleaning method and apparatus |
| CN104347358A (en) * | 2014-09-15 | 2015-02-11 | 上海华力微电子有限公司 | Method for improving plasma damage to device |
| CN113835299A (en) * | 2015-11-30 | 2021-12-24 | 应用材料公司 | Method and apparatus for post-exposure processing of photoresist wafers |
| CN110459493A (en) * | 2019-08-21 | 2019-11-15 | 北京北方华创微电子装备有限公司 | Vacuumize chamber and vacuum pumping method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200535985A (en) | 2005-11-01 |
| KR100674735B1 (en) | 2007-01-25 |
| KR20060047498A (en) | 2006-05-18 |
| JP2005317782A (en) | 2005-11-10 |
| CN100388430C (en) | 2008-05-14 |
| JP4450371B2 (en) | 2010-04-14 |
| TWI374475B (en) | 2012-10-11 |
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