CN1479801A

CN1479801A - Method for regenerating container for plasma treatement, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma ...

Info

Publication number: CN1479801A
Application number: CNA018204775A
Authority: CN
Inventors: 今福光v; 今福光祐
Original assignee: Tokyo Electron Ltd
Current assignee: Tokyo Electron Ltd
Priority date: 2000-12-12
Filing date: 2001-12-07
Publication date: 2004-03-03
Anticipated expiration: 2021-12-07
Also published as: JP4440541B2; WO2002048421A1; CN100386467C; JPWO2002048421A1; KR20090081446A; KR100945315B1; KR101005983B1; KR20030063415A

Abstract

When a sprayed coating, which is constituted of alumina, a rare earth oxide, polyimide or polybenzimidazole and covers a surface of a base material of a plasma processing container internal member, becomes degraded through use in a plasma environment, the same material as that constituting the sprayed coating is resprayed over the degraded sprayed coating. As a result, the plasma processing container with its surface having become degraded through use in the plasma environment can be restored to an as-good-as-new state.

Description

The manufacture method and the plasma processing apparatus of the renovation process of container for plasma treatment, container for plasma treatment internal part, container for plasma treatment internal part

Technical field

The present invention relates to renovation process, the container for plasma treatment internal part of container for plasma treatment, the manufacture method and the plasma processing apparatus of container for plasma treatment internal part.

Background technology

The present invention relates to renovation process and the container for plasma treatment internal part and the manufacture method thereof of container for plasma treatment, and plasma processing apparatus, particularly can will cause the renovation process of the parts regeneration of surface deterioration because of use in plasma body as the same container for plasma treatment of new product.

In the operation of making the equipment that uses semi-conductor and liquid crystal etc., generally use plasma body treatment unit such as etching system.In these plasma processing apparatus (in the container for plasma treatment), owing to used CF ₄Isoreactivity gas is as handling gas, so internal part suffers chemical damage easily, and owing to exist by the ion of plasma exciatiaon etc., be easy to because of corroding impaired.

Therefore, in the past, the internal part of container for plasma treatment is with the few overlay film of plasma body consumption covering protection to be carried out on the surface of base materials such as aluminium.Particularly the sputtered films of bismuth of aluminum oxide, rare earths oxide etc. because of plasma body consumption is few, and is used as overlay film.And, on the base material of container for plasma treatment internal part that with aluminium etc. is material, thickness is set for for example polyimide plate of 1.5mm, to protect this parts.

On the other hand, in this plasma processing apparatus, dispose many field-replaceable units with electroconductibility or insulativity such as focusing ring or shield ring (below be called " device feature ") on the predetermined position in treatment chamber.

Therefore, in above-mentioned plasma processing apparatus, be out of shape,, change new parts so need the parts of such generation distortion are discarded as running stores owing to the plasma body that generates in the treatment chamber can make the surface of device feature be pruned.

But sputtered films of bismuth begins deterioration by the surface inevitably after using for a long time, and thickness reduces, because the minimizing situation of this thickness has determined the life-span of internal part, used parts must be replaced by new, and are therefore uneconomical.And there are many jogs on the surface of sputtered films of bismuth, particularly in the part of projection, at the use initial stage of container for plasma treatment internal part, forms easily and handles the resultant particle that gas reaction generates, and might cause goods defective.

Equally, under the situation that plates such as polyimide are set, in case surface deterioration also need to change, and inevitably can be gapped between base material and the resin board, exist problems such as making the dirt leakage because of the stopping property difference.

In addition, for above-mentioned removable device feature, under the situation that device feature is out of shape because of consumption, as mentioned above, the parts that existence will be out of shape discard, replace with the situation of new parts as running stores.But problem is that so the device feature that is consumed through new part replacement commonly used can raise the cost, and when new parts did not have the stock, production line had to stop to produce.

The problems referred to above that internal part had in view of existing container for plasma treatment, the objective of the invention is to, provide renewable and go out as new product, new and through renovation process and the internal part of container for plasma treatment and the manufacture method and the plasma processing apparatus of container for plasma treatment of the container for plasma treatment of improvement.

Its purpose also is to provide a kind of renovation process of container for plasma treatment, even make under the situation of a part of warpage of device feature, and also can be with the simple method reparation device feature of product as an alternative.

Summary of the invention

In order to address the above problem, the application's first invention, it is characterized in that, the surface coverage of base material have any one sputtered films of bismuth in aluminum oxide, rare earths oxide, polyimide or the polybenzimidazole the container for plasma treatment internal part, spraying plating and the same material of above-mentioned sputtered films of bismuth again take place on the sputtered films of bismuth of deterioration along with use.Just can make thus because of in plasma body, using the container for plasma treatment that deterioration takes place on the surface to regenerate the same as new product.

As preferred form, before above-mentioned spraying plating again, also the dry ice blasting operation can be set.So just can suppress the initial stage particulate produces.

As preferred form, can also after above-mentioned spraying plating again, the dry ice blasting operation be set.

The application's second aspect, be under a part of shape of the above-mentioned parts in predetermined position in being disposed at above-mentioned container for plasma treatment situation about changing, remove the parts of this distortion by Cement Composite Treated by Plasma, then, will make the components bonding of distortion shape before in the place of having removed above-mentioned crushed element.

According to the method described above, under the situation that a part of shape of device feature deforms, by only this crushed element being replaced by the parts of making according to the shape before the distortion, just do not need to change this device feature integral body into new product, just this device feature can be restored with simple operation is original shape.

The application's the third aspect, it is a kind of internal part of container for plasma treatment, it is characterized in that, the surface of base material is covered with the central any sputtered films of bismuth of aluminum oxide, rare earths oxide, polyimide or polybenzimidazole, after spraying plating, above-mentioned any sputtered films of bismuth is carried out dry ice blasting.

Fourth aspect in the application, it is a kind of manufacture method of container for plasma treatment internal part, it is characterized in that this method is included in the operation of any sputtered films of bismuth in substrate surface capping oxidation aluminium, rare earths oxide, polyimide and the polybenzimidazole; With the operation of behind the above-mentioned any sputtered films of bismuth of spraying plating, carrying out dry ice blasting.

According to of the present invention the 3rd, fourth aspect, can suppress the initial stage particulate and produce.

And according to of the present invention the 3rd, fourth aspect, can be provided at the use initial stage suppresses renewable internal part and the manufacture method thereof as the same container for plasma treatment of new product that particulate produces, function is not also degenerated after spraying plating again.

Description of drawings

Fig. 1 is the structure iron of the plasma processing apparatus in first, second embodiment of the present invention;

Fig. 2 is the diagrammatic cross-section of the container for plasma treatment internal part in the first embodiment of the invention;

Fig. 3 represents the diagrammatic cross-section of the container for plasma treatment regeneration process in the first embodiment of the invention;

Fig. 4 represents the diagrammatic cross-section of the container for plasma treatment internal part regeneration process in the second embodiment of the invention;

Fig. 5 is as the cut-away view of the etching system of plasma device in the third embodiment of the invention;

Fig. 6 is the sectional view of focusing ring;

Fig. 7 is the synoptic diagram that the plasma device in the third embodiment of the invention is used a kind of embodiment of parts renovation process;

Fig. 8 is the sectional view of shield ring;

Fig. 9 is the synoptic diagram as the another kind of embodiment of the restorative procedure of the plasma device usefulness parts of third embodiment of the invention.

Embodiment

With reference to the accompanying drawings, describe the internal part and the manufacture method thereof of the renovation process and the container for plasma treatment of renewable container for plasma treatment of the present invention in detail, and the preferred implementation of plasma processing apparatus.

Renewable container for plasma treatment internal part of the present invention can be used for the various parts in the plasma processing apparatus, for example デ Port シ-Le De, baffle plate, focusing ring, dead ring, shield ring, bellows cover, electrode etc.Mainly be that example describes below with the semiconductor-fabricating device.

(first and second embodiments)

Fig. 1 is the structural representation of the plasma device 1 of first, second embodiment of the present invention.Treatment chamber 2 in the plasma device 1 is the cylindric processing vessels that for example formed by the base materials such as aluminium through the aluminium oxidative treatment, and ground connection.

Bottom in treatment chamber 2 is provided with the insulation supporting plate 3 of pottery etc., and on the top of this insulation supporting plate 3, the roughly cylindrical pedestal that is provided with the processed substrates such as semiconductor wafer that are used to place 8 inches of diameters is for example supported platform 4.Support to be provided with the pedestal 5 that constitutes lower electrode on the platform 4 at pedestal, and link to each other with Hi-pass filter (HPF) 6.

Support the inside of platform 4 to be provided with heat exchange chamber 7 at pedestal, circulate by heat exchange medium input tube 8 and heat exchange medium vent pipe 9, form the structure that semiconductor wafer W can be maintained preset temperature with pedestal 5 from the heat exchange medium of outside.And the structure of this temperature can be automatically controlled in formation by temperature sensor (not shown), temperature control device (not shown).

And, on pedestal 5, be provided with and be used to adsorb the electrostatic chuck 11 that keeps semiconductor wafer W.This electrostatic chuck 11 for example has by polyimide resin from clamping the structure of conductive film electrode 12 up and down, when the voltage of applying 1.5kV for example for electrode 12, wafer W absorption is remained on the electrostatic chuck 11 by the Coulomb's force by the direct supply 13 that is arranged on treatment chamber 2 outsides.Certainly, also can not adopt this electrostatic chuck, but adopt the periphery of pushing down wafer W by mechanical clamp etc., wafer W is remained on structure on the pedestal 5.

In addition, support on platform 4, pedestal 5 and the electrostatic chuck 11, be formed for supplying with the gas passage 14 of media such as helium for example at the back side of semiconductor wafer W, utilize heat-transfer medium such as helium to make semiconductor wafer W maintain predetermined temperature at insulcrete 3, pedestal.

Periphery on pedestal 5 is provided with roughly focusing ring 15 in the form of a ring, is used for electrostatic chuck 11 is surrounded.Focusing ring 15 has the function that the ion that makes in the plasma body is injected into semiconductor wafer W effectively by for example conductive silicon manufacturing.

Upper electrode 21 is being supported by insulating element 25 and shield ring 55 in top in treatment chamber 2.This upper electrode 21 comprises: the electrode support of being made by for example aluminium 22 and parallel relative battery lead plate 23 of being made by for example silicon with a plurality of outlet orifices 24 with pedestal 5 etc.Has certain spacing between pedestal 5 and the upper electrode 21, for example about 10～60mm.

On electrode support 22, be provided with gas input port 26, and connecting gas supply pipe 27.And, link to each other input etching gas or other processing gas in treatment chamber 2 with processing gas supply source 30 with mass flow controller 29 by valve 28.

As handling gas, can use for example fluorocarbon gas (CxFy), hydrofluoric ether gas (CpHqFr) etc. to contain the gas of haloid element.

In the bottom of treatment chamber 2, connecting gas barrier 35 such as vacuum pump by vapor pipe 31.Gas barrier 35 comprises turbomolecular pump equal vacuum pump, can make and be pumped into for example any vacuum tightness of 10mTorr～1000mTorr in the treatment chamber 2.

At the sidewall of treatment chamber 2, be provided with gate 32, under the state that gate 32 is opened, semiconductor wafer W is sent between the adjacent load lock chamber (not shown).

The following describes the High frequency power plenum system of this plasma body device 1.At first be about the High frequency power of 27～150MHz, supply to upper electrode 21 by coupling mechanism 41 and feeder rod used therein 33 by first high frequency electric source, 40 output frequencies.And upper electrode 21 is connecting low-pass filter (LPF) 42.

By applying high-frequency voltage like this, just can make to form in the treatment chamber 2 to be in preferred disassociation state and highdensity plasma body, and can carry out the Cement Composite Treated by Plasma under the low pressure condition.As high frequency electric source 40, can use for example high frequency electric source of 60MHz.

On the other hand, be the High frequency power below the 4MHz for example by the frequency of high frequency electric source 50 output, supply to the pedestal 5 of composition lower electrode by coupling mechanism 51.By applying the frequency of this scope, just can play the not hurtful appropriate ionization of semiconductor wafer W.

In such plasma processing apparatus 1, the internal part of the container for plasma treatment in the present embodiment can support that platform 4, pedestal 5, electrostatic chuck 11, focusing ring 15, insulating element 25, shield ring 55 etc. are corresponding with the inwall 2a that exposes for example treatment chamber 2 in plasma body in the process of handling to the open air, insulation supporting plate 3, pedestal.

Fig. 2 is the diagrammatic cross-section of the container for plasma treatment internal part 100 in the present embodiment.(a) be illustrated in after the intact sputtered films of bismuth of spraying plating just; (b) expression is through CO ₂After the injection.Shown in Fig. 2 (a), form sputtered films of bismuth 110 on the surface of base material 120 of internal part that with for example aluminium is the container for plasma treatment of material.Sputtered films of bismuth 110 can use aluminum oxide (Al ₂O ₃), rare earths oxide, polyimide and polybenzimidazole etc.

Past is being used for resins such as polyimide under the situation of base protection, is for example on the Al base material polyimide plate that thickness is 1.5mm is being set, when just change this resin during deterioration along with the use in plasma body.

The spraying plating in past, the impact when being the collision that causes by heat and spouting velocity is carried out, and spraying plating is carried out in the impact when this then is the only collision by being caused by spouting velocity.Like this, just can spraying plating go out the film of a few millimeter thickness, and use as the spraying plating overlay film.

Forming Al ₂O ₃Sputtered films of bismuth, Y ₂O ₃During sputtered films of bismuth, preferably use the atmosphere plasma sputtering process, perhaps use the plasma spraying method of carrying out under the substantially oxygen-free environment, but also can use high-speed flame spraying plating, outburst sputtering process etc.

These films of just having finished spraying plating are concavo-convex very many states, if use it for container for plasma treatment inside like this, will make owing to the collision of plasma body intermediate ion particularly in the crushable layer (crackle layer) of protuberance, to be easy to generate particle, might cause the film deterioration.

At this, shown in Fig. 2 (b), if the film of just finishing spraying plating is carried out CO ₂Spray, just can make the jog planarization on surface, same state after making the internal part realization of container for plasma treatment and use certain hour in container for plasma treatment so just can suppress the initial stage particulate and produce.By this operation with the sputtered films of bismuth surface 131 of Fig. 2 (a) the certain thickness t1 that prunes.

CO ₂Injection is at for example pressure 2.5～4.2kgf/cm ², nozzle diameter 16mm, nozzle carry out under the condition of plating surface apart from 15mm, dry ice particle diameter 0.3～2.0mm, dry ice flow 0.5kg/min.Using for example Y ₂O ₃Under the situation of sputtered films of bismuth, by CO ₂Spraying the thickness t that reduces is preferably below the 10 μ m.

Fig. 3 is the diagrammatic cross-section of container for plasma treatment internal part 100 regenerative processes in the first embodiment of the invention.(a) the expression A-stage (has been carried out CO before the use ₂Spray); (b) be illustrated in use in the container for plasma treatment after; (c) CO is carried out in expression for regeneration ₂After the injection; (d) represent the state that spraying plating again is later.At this, what is called is spraying plating again, refer in container for plasma treatment use after, the spraying plating of before Cement Composite Treated by Plasma, implementing of on sputtered films of bismuth, carrying out once more.

Shown in Fig. 3 (a), on base material 120 surfaces of the container for plasma treatment internal part 100 that forms by materials such as for example Al, form sputtered films of bismuth 110, pass through CO again ₂Injection makes flattening surface.Sputtered films of bismuth 110 can use aluminum oxide, rare earths oxide, polyimide or polybenzimidazole etc.

Y as rare earths oxide ₂O ₃, can be with for example t=50～2, the thickness of O0Om carries out spraying plating, and for polyimide or polybenzimidazole, can carry out spraying plating with the thickness of for example t=2～3mm.This is to have considered the value of thinking more appropriate after atraumatic effect and the economy.These materials are being used under the situation of plasma body, shown in Fig. 3 (b), the thickness that the thickness of the sputtered films of bismuth 133 of Fig. 3 (a) is consumed is t2.

In table 1, expression will be placed on the thickness reduction t2 under the situation in the plasma processing apparatus by the container for plasma treatment internal part that various materials cover.In addition, used plasma processing apparatus is the parallel plate-type plasma-etching apparatus, and at room pressure 40mTorr, RF power 1500W, etching gas are CF ₄/ Ar/O ₂Place 20hr under the condition of=100/20/200 mixed gas.Table 1

The kind of film	Consumption t2 (μ m)
The kind of film	Consumption t2 (μ m)	????Y ₂O ₃Sputtered films of bismuth	????30.0
????Al ₂O ₃Sputtered films of bismuth	????109.0	????Y ₂O ₃Sputtered films of bismuth	????30.0
????Al ₂O ₃Sputtered films of bismuth	????109.0	????Al ₂O ₃Pottery	????88.5
????SiO ₂	????355.0	????Al ₂O ₃Pottery	????88.5

As shown in table 1, as can be known, even containing under the environment of halogen compounds Y ₂O ₃, Al ₂O ₃Anti-plasma corrodibility also fine.Particularly under these conditions, in the middle of these 4 kinds of films, Y ₂O ₃The consumption of sputtered films of bismuth is minimum, the plasma-resistance excellence.

The following describes this Y ₂O ₃Sputtered films of bismuth carries out CO ₂Situation during injection.CO ₂Be injected in pressure 2.5～4.2kgf/cm ², nozzle diameter 16mm, nozzle carry out under the condition of plating surface apart from 15mm, dry ice particle diameter 0.3～2.0mm, dry ice flow 0.5kg/min.

When injecting time was 30sec and 60sec, emitted dose was respectively 5 μ m and 10 μ m.By this procedure, shown in Fig. 3 (c), can make the pruned thickness of t3 of sputtered films of bismuth surface 135 among Fig. 3 (b), make the concavo-convex planarization of surface generation, and can remove foreign matter.In addition, when sputtered films of bismuth be Y ₂O ₃The time, by CO ₂It is more than the 10 μ m that injection makes the reduction t3 of thickness, is preferably more than the 20 μ m.

Then, shown in Fig. 3 (d), use with the same material of sputtered films of bismuth 110 and carry out spraying plating again.For aluminum oxide, rare earths oxide, polyimide or polybenzimidazole sputtered films of bismuth, the crystallization in the film can by spraying plating again, not form new and old crystallization continuously along with the time changes on interface, and the regeneration back is as new product.And after this can also carry out CO once more ₂Spray, make the sputtered films of bismuth surface concavo-convex flatten smooth.

As mentioned above, if produce and after use, also can regenerate as the internal part of the same container for plasma treatment of new product according to having implemented the renewable container for plasma treatment internal part of Corresponding Countermeasures and the renovation process of manufacture method and container for plasma treatment internal part thereof at the initial stage particle in the first embodiment of the invention, just can provide to suppress the initial stage particulate.

Remove the method on the container for plasma treatment internal part surface after the use, preferably CO that for example from the teeth outwards can retained foreign body ₂Gunite, but also be not limited thereto.Bring the clean surface such as soup of infringement can realize cleaning can not for sputtered films of bismuth or base material if use, also can use aluminum oxide or SiC etc. to spray, perhaps grind with abrasive materials such as sand grains.And, carry out etched chemical grinding method with soup and also might be suitable for.

Fig. 4 is the diagrammatic cross-section of the expression second embodiment ionic medium body processing vessel internal part 100 regeneration processes.(a) expression A-stage; (b) be illustrated in the later state of use in the container for plasma treatment; (c) represent state after the spraying plating again.

In second embodiment of the present invention, not in container for plasma treatment, to carry out CO after the use with first embodiment the samely ₂Spray, but after in container for plasma treatment, using, use the sputtered films of bismuth same to carry out spraying plating once more (spraying plating again) with using preceding sputtered films of bismuth.The implementation condition of second embodiment of the present invention is except carrying out CO ₂Spray beyond this point, all identical with first embodiment.

Owing to do not carry out CO ₂Spray, and be to use with Cement Composite Treated by Plasma before the sputtered films of bismuth identical materials carry out spraying plating again, so the sputtered films of bismuth during spraying plating has easier effect of adhering to again.This is because the state that has concaveconvex shape after Cement Composite Treated by Plasma is compared with more smooth state, easier the adhering to of sputtered films of bismuth during spraying plating.Therefore, regenerated the same because of being used for the container for plasma treatment that surface deterioration takes place plasma body as new product.

(the 3rd embodiment)

Describe the 3rd embodiment of the present invention below with reference to the accompanying drawings in detail.

Fig. 5 is the cut-away view as the plasma-etching apparatus of plasma processing apparatus, inside at the device body 201 of this plasma body etching system, promptly in treatment chamber 221, dispose a plurality of various device features that formation sets shape at preposition.

Specifically, below treatment chamber 221, dispose the lower electrode 202 that forms by electro-conductive material, and also mounting the electrostatic chuck 204 that adsorbs as the semiconductor wafer W maintenance of object being treated on above-mentioned lower electrode 202, and this lower electrode 202 is supported on and can carries out in the direction of arrow A on the lifting shaft 205 of lifting.And lifting shaft 205 is connecting high frequency electric source 207 by coupling mechanism 206, and lifting shaft 205 runs through the endless member 209 that is formed by electro-conductive material.

And lower electrode 202 between the bottom surface of these electrode protection parts 229 and device body 201, is installed with the telescopic corrugated tube (bellows) 208 that is formed by electro-conductive materials such as stainless steels simultaneously by 229 protections of electrode holding member.And, upper side at lower electrode 202, disposing the focusing ring 210 that forms by electro-conductive material or insulating material, and first bellows cover 211 vertically is being set in the bottom surface of this focusing ring 210, and second bellows cover 211 that the bottom surface by device body 201 makes progress is set, its part coincides with first bellows cover 211.

Above treatment chamber 221, on the direction relative, disposing the upper electrode 213 that forms by electro-conductive material with above-mentioned lower electrode 202, this upper electrode 213 links to each other with high frequency electric source 215 by coupling mechanism 214.And, run through upper electrode 213 ground a plurality of gas discharge holes 216 are being set, be the reactive gas of gas to the treatment chamber supply source from the CF (fluorocarbon) that contains that is arranged on the gas supply port 217 above the device body 201 by gas discharge hole 216.Promptly, gas supply port 217 joins with gas supply source 220 by flow control valve 218 and switch-valve 219, the reactive gas that is derived from gas supply source 220 supplies to gas supply port 217 by switch-valve 219 and flow control valve 218, is discharged and is input in the treatment chamber 221 by gas discharge hole 216 again.

And the shield ring 222 that is formed by insulating material is keeping upper electrode 213, and is provided with guard ring 223 around shield ring 222, and by the outer rim of this guard ring 223 shield member 224 is set vertically.

And, also be provided with the outlet orifice 225 of the bottom of through-going device body 201, simultaneously, this outlet orifice 225 links to each other with vacuum pump 226, and is provided with the lateral object being treated conveyance hole 227 of through-going device body 201 belows, is used to move into, take out of semiconductor wafer W.

In having the plasma-etching apparatus of this structure, by not shown driving mechanism lifting shaft 205 is moved in the direction of arrow A, thereby regulate the position of semiconductor wafer W, then, this lifting shaft 205 is used as feeder rod used therein, apply for example high-frequency voltage of 13.56MHz by high frequency electric source 207,215 to lower electrode 202 and upper electrode 213, thereby produce glow discharge.

In addition, if the vacuum environment that treatment chamber 221 reduces pressure to and is scheduled to by vacuum pump 226, and supply with reactive gass to treatment chamber 221 by gas supply source 220, then make the reactive gas plasma by above-mentioned glow discharge, by focusing ring 210 and shield ring 222 with controlling plasma between lower electrode 210 and upper electrode 213, consequently: can carry out desirable microfabrication to the semiconductor wafer W of having carried out predetermined mask.

In addition, although carry out microfabrication by like this semiconductor wafer W being carried out dry etch process, and on the other hand, because exposing the surface of the various device features under plasma ambient to the open air, focusing ring 210, shield ring 222 etc. also consume because of being subjected to etching, therefore be necessary degree, with the new device feature that part replacement consumed according to its consumption.

But, when the device feature that usually so consumes with new part replacement, can cause the production cost rising, perhaps the situation that when above-mentioned new parts do not have the stock, causes production line to have to stop production.

For this reason, in the 3rd embodiment of the present invention, under the situation that the part of each structure unit deforms, excise the part of above-mentioned generation distortion, engage the parts of making by the shape before the distortion in the position fusion of having excised above-mentioned crushed element.

Fig. 6 is the sectional view of above-mentioned focusing ring 210, and this focusing ring 210 forms the ring-type that is made of inside diameter D 1 and outer diameter D 2, and have stage portion 230 on inner peripheral surface under the situation of normally new parts.

This focusing ring 210 is by electro-conductive material or SiO such as aluminium ₂Make Deng insulating material, under situation about making, have the effect that improves semiconductor wafer W periphery plasma uniformity by electro-conductive material; Under situation about making by insulating material, has the effect that on semiconductor wafer W, forms high density plasma, no matter be which kind of situation, because this focusing ring 210 exposes to the open air in plasma ambient, so by this plasma ambient etching being carried out on its surface prunes, its result is shown in Fig. 7 (a), and distortion has taken place the part of focusing ring 210, has formed crushed element 210a.

At this, in the present embodiment, shown in Fig. 7 (b), the new parts 210b that has the preceding size and dimension of distortion on the one hand by other approach manufacturing, on the other hand, along the line of cut C1 cut-out focusing ring 210 of Fig. 7 (a), to remove crushed element 210a, and shown in Fig. 7 (c) [B],, produce the focusing ring 210 that has the stage portion identical 230 on the inner peripheral surface with Fig. 6 engaging new parts 210b with crushed element 210a corresponding position fusion.Therefore, the focusing ring 210 by configuration on the predetermined position of plasma-etching apparatus is repaired like this, made just can carry out required etch processes again.

According to such present embodiment, even under the situation that a part of shape is deformed, also can only replace with new parts 210b and obtain required focusing ring 210 again by removing crushed element 210a, thereby also just there is no need to change the focusing ring that is out of shape through new focusing ring commonly used, thereby can be, and can seek to reduce cost with the simple method reparation device feature of product as an alternative.

And, self-evident, the 3rd embodiment of the present invention, for other device feature that is configured in the plasma-etching apparatus, for example shield ring 222, guard ring 223, shield member 224 etc. are suitable for equally.

Fig. 8 and Fig. 9 represent to be suitable for to use the situation of shield ring 222 of the renovation process of third embodiment of the invention.

That is, Fig. 8 is the sectional view of above-mentioned shield ring 222, usually, is under the situation of new product at this shield ring 222, is to form ring-type by inside diameter D 3 and outer diameter D 4, and has thinner wall section 231.

And, because this shield ring 222 is also the same with above-mentioned focusing ring 210, expose to the open air in plasma ambient, therefore as Fig. 9 (a) shown in, understand along with the time changes, make the part of thinner wall section 231 etched, thus formation crushed element 222a.

Therefore, in the present embodiment, the same with the situation (Fig. 7) of focusing ring 210, shown in Fig. 9 (b), have the new parts 222b of the preceding size and dimension of distortion on the one hand by other approach manufacturing, on the other hand, line of cut C2 along Fig. 9 (a) cuts off shield ring 222, to remove crushed element 222a, shown in Fig. 9 (c) [E], engage new parts 222b with crushed element 222a corresponding position fusion, produce shield ring 222 with thinner wall section the same 231 with Fig. 8.Therefore, the shield ring 222 by configuration on the predetermined position of plasma-etching apparatus is repaired like this, made just can carry out required etch processes again.

Like this, the same with the situation of focusing ring 210, even under shield ring 222 situation that a part of shape deforms because of etching, also can obtain required shield ring 222 by only removing crushed element 222a and being replaced with new parts 222b, and there is no need to change the focusing ring that is out of shape through new focusing ring commonly used, thereby, and can seek to reduce cost with the simple method manufacturing device feature of product as an alternative.

In addition, the 3rd embodiment of the present invention is not limited to above-mentioned embodiment.Be to be that example describes in the above-described embodiment with so-called acceleration of ions formula plasma device, self-evident, also can adopt for example magnetic field accelerating type plasma device.

As mentioned above, according to the present invention, be covered with on the surface of base material any one sputtered films of bismuth in aluminum oxide, rare earths oxide, polyimide or the polybenzimidazole the container for plasma treatment internal part, spraying plating and the same material of above-mentioned sputtered films of bismuth again take place on the sputtered films of bismuth of deterioration along with use.Just can will cause the container for plasma treatment regeneration of surface deterioration the same because of use in plasma body thus as new product.

And, owing to be configured under the situation that a part of shape of the parts on the predetermined position deforms in the container for plasma treatment causing because of Cement Composite Treated by Plasma, after removing this crushed element, will be according to the components bonding made of shape before the distortion at the position of having removed crushed element, like this, even under the situation that a part of shape of device feature deforms, also there is no need often will produce the device feature that is out of shape and be replaced by new device feature, and can use the simple method manufacturing device feature of product as an alternative, thereby can seek to reduce cost, and can avoid the long-time situation about stopping production of production line that do not have the stock to cause owing to new parts as far as possible.

And the sputtered films of bismuth at substrate surface capping oxidation aluminium, rare earths oxide, polyimide or the polybenzimidazole of container for plasma treatment internal part carries out CO before use ₂Injection makes surface smoothing, like this, just can suppress the initial stage particulate and produce.

Above with reference to description of drawings the renovation process of container for plasma treatment internal part of the present invention and the preferred implementation of reproducible container for plasma treatment internal part, but the present invention is not limited to these examples.Clearly, so long as one of skill in the art can dream up various interior various modifications or the correction examples of category that are in the interior described technological thought of scope of present patent application, should understand, they all belong to technical scope of the present invention certainly.

The possibility of utilizing on the industry

The present invention can be applicable to the regeneration because of the internal part that uses the container for plasma treatment cause surface deterioration in plasma, and renewable the same as new product, particularly applicable to the manufacturing process of semiconductor device or LCD substrate etc.

Claims

1. the renovation process of a container for plasma treatment is characterized in that,

With the container for plasma treatment internal part on any one sputtered films of bismuth covering substrates surface in aluminum oxide, rare earths oxide, polyimide or the polybenzimidazole, along with in plasma body, using on the sputtered films of bismuth of deterioration, spraying plating and the same material of described sputtered films of bismuth again.

2. the renovation process of container for plasma treatment as claimed in claim 1 is characterized in that, has the operation of carrying out dry ice blasting before described spraying plating again.

3. the renovation process of container for plasma treatment as claimed in claim 1 or 2 is characterized in that, has the operation of carrying out dry ice blasting after finishing described spraying plating again.

4. the renovation process of a container for plasma treatment is characterized in that,

Handled object is carried out Cement Composite Treated by Plasma, when causing because of described Cement Composite Treated by Plasma when being configured in that a part of shape of the described parts on the predetermined position deforms in the container for plasma treatment, after removing described crushed element, will be according to the components bonding made of shape before the distortion at the position of having removed described crushed element.

5. the internal part of a container for plasma treatment is characterized in that, with any sputtered films of bismuth covering substrates surface in aluminum oxide, rare earths oxide, polyimide or the polybenzimidazole, behind the described any sputtered films of bismuth of spraying plating, carries out dry ice blasting.

6. the manufacture method of a container for plasma treatment internal part is characterized in that, this method comprises:

Operation with any sputtered films of bismuth covering substrates surface in aluminum oxide, rare earths oxide, polyimide and the polybenzimidazole; With

Behind the described any sputtered films of bismuth of spraying plating, carry out the operation of dry ice blasting.

7. the internal part of a container for plasma treatment is characterized in that, substrate surface is coated with any sputtered films of bismuth in aluminum oxide, rare earths oxide, polyimide or the polybenzimidazole.

8. use the renovation process of each described container for plasma treatment in the claim 1～4 to carry out the plasma processing apparatus of Cement Composite Treated by Plasma.

9. the plasma processing apparatus that has container for plasma treatment internal part as claimed in claim 5.