KR20090081446A - Method for regenerating container for plasma treatment, member inside container for plasma treatment, method for preparing member inside container for plasma treatment, and apparatus for plasma treatment - Google Patents

Abstract

A method for regenerating a container for plasma treatment, characterized in that, to a thermally sprayed coating comprising one of alumina, a rare earth metal oxide, a polyimide and polybenzimidazole, which has been deteriorated by the use in plasma, on the surface of a member inside a container for plasma treatment having a substrate and, applied thereon, the thermally sprayed coating, a material being the same as that for the deteriorated sprayed coating is re-sprayed. The method allows a container for plasma treatment having a surface deteriorated by the use in plasma to be generated into the one as good as new.

Description

TECHNICAL FOR REGENERATING CONTAINER FOR PLASMA TREATMENT, MEMBER INSIDE CONTAINER FOR PLASMA TREATMENT, METHOD FOR PREPARING MEMBER INSIDE CONTAINER FOR PLASMA TREATMENT, AND APPARATUS FOR PLASMA TREATMENT}

The present invention relates to a regeneration method of a plasma processing vessel, a plasma processing vessel inner member, a method of manufacturing a plasma processing vessel inner member, and a plasma processing apparatus.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for regenerating a plasma processing vessel, an inner member of a plasma processing vessel, a method for manufacturing the same, and a plasma processing apparatus, and in particular, a plasma processing capable of regenerating a member whose surface has been degraded by use in plasma as a new product. A method for regenerating a container.

Generally, in the process of manufacturing the device using a semiconductor, a liquid crystal, etc., plasma processing apparatuses, such as an etching apparatus, are used. In such a plasma processing apparatus (in a plasma processing vessel), CF _{4 is used} as a processing gas. Since a reactive gas such as or the like is used, the inner member is susceptible to chemical damage, and is also susceptible to corrosion damage by ions excited by plasma or the like.

Therefore, conventionally, the plasma processing vessel inner member covers and protects the surface of a base material, such as an aluminum material, with a film with low plasma consumption. In particular, thermal sprayed films such as alumina and rare earth oxides were used as coatings without plasma consumption. Moreover, the polyimide plate of thickness 1.5mm was provided on the base of the plasma processing container inner member which consists of aluminum etc., and the member was protected.

On the other hand, in this type of plasma processing apparatus, a large number of replaceable parts (hereinafter referred to as "apparatus parts") having conductivity or insulation such as a focus ring and a shield ring were provided at predetermined positions in the processing chamber.

In the plasma processing apparatus, since the surface of the device component is shaved and deformed by the plasma generated in the processing chamber, such deformed components are discarded as consumables and replaced with new components.

However, the thermal sprayed film cannot deteriorate from the surface after a long time of use and the film thickness is inevitable, and this decrease determines the life of the internal member, and the used member is uneconomical because it needs to be replaced with a new one. In addition, the thermal sprayed coating has many irregularities on the surface, and particularly, the convex portion easily forms particles such as reaction products with the processing gas at the initial stage of use of the inner member of the plasma processing vessel, which may cause product defects.

In the case of providing a plate such as polyimide, similarly, when the surface is deteriorated, replacement is necessary, and a gap between the base and the resin plate cannot be avoided, and there is a problem that dirt remains due to deterioration of adhesion.

On the other hand, in the replaceable apparatus parts described above, when the apparatus parts are consumed and deformed, the deformed parts may be discarded as consumables and replaced with new parts as described above. However, there is a problem that it is always expensive to replace such consumed device parts with new parts, and when the new parts are not in stock, the production line has to be stopped.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems of conventional plasma processing container internal members, and an object of the present invention is to provide a new and improved method for regenerating a plasma processing container and a plasma processing container, which can be reproduced like a new product. It is to provide an inner member, a method for producing a plasma processing container, and a plasma processing apparatus.

It is also an object of the present invention to provide a method for regenerating a plasma processing container that can repair a device part as a substitute by a simple method even when a part of the device part is deformed.

In order to solve the said subject, 1st invention of this application is aimed at use in the plasma of the internal member of the plasma processing container by which the surface of the base material was coat | covered with the thermal spraying film of alumina, a rare earth oxide, polyimide, or polybenzoamidazole. It is characterized by respraying the same material as the said thermal sprayed coating to the thermal sprayed coating deteriorated.

As a better form, it may have a process of performing dry ice blasting before respraying. This makes it possible to suppress the initial particle generation. As a better form, it may have a process of performing dry ice blasting after the said respray.

2nd invention of this application is a part formed in the shape before deformation after removing the said deformation | transformation part when the shape of the said part installed in the predetermined position in the said plasma processing container is deformed by the plasma processing, The said deformation | transformation part It is characterized by bonding to this removed point.

According to a third aspect of the present invention, the inner surface of the substrate is coated with a thermal sprayed coating of any one of alumina, rare earth oxide, polyimide, or polybenzoimidazole, and the thermal spray blasting is performed after the thermal spraying. It is characterized by being.

According to a fourth aspect of the present invention, there is provided a method of manufacturing an inner member of a plasma processing container, the process of coating a surface of a substrate with a thermal sprayed coating of alumina, rare earth oxide, polyimide, or polybenzoimidazole and after spraying any of the thermal sprayed coatings It is characterized by having the process of dry ice blasting.

According to the first invention of the present application, it is possible to regenerate a plasma processing container whose surface has been degraded by use in plasma as a new product.

According to the second invention of the present application, when a part of the shape of the device part is deformed, by replacing only the deformed part with a part formed in the shape before deformation, the entire device part is not replaced with a new part, The device parts can be restored to their original shape.

According to the 3rd, 4th invention of this application, it becomes possible to suppress generation | occurrence | production of initial particle.

In addition, according to the third and fourth inventions, it is possible to provide a plasma processing container inner member and a manufacturing method which can suppress particle generation at the beginning of use and can reproduce like a new product without functional deterioration even after respraying.

EMBODIMENT OF THE INVENTION With reference to an accompanying drawing, the reproduction | regeneration method of the renewable plasma processing vessel which concerns on this invention, the plasma processing vessel inner member, its manufacturing method, and the suitable embodiment of a plasma processing apparatus are demonstrated in detail.

Explanation of symbols for the main parts of the drawings

100: internal member of the plasma processing container 110: thermal spray coating

120: base material 131, 133, 135: thermal sprayed coating surface

210: focus ring (component for plasma device)

210a: deformation part 210b: new part (part for plasma device)

222: shield ring (parts for plasma devices)

222a: deformation part 222b: new part (part for plasma device)

The renewable plasma processing vessel inner member according to the present invention can be used for various members in the plasma processing apparatus, for example, deposition shields, baffle plates, focus rings, insulator rings, shield rings, bellows covers, electrodes, and the like. have. The following mainly describes an example of the semiconductor manufacturing apparatus.

(1st and 2nd embodiment)

1 is a cross-sectional view showing the configuration of a plasma apparatus 1 according to the first and second embodiments of the present invention. The processing chamber 2 in the plasma apparatus 1 is formed as a cylindrical processing container made of a base material such as aluminum, for example, anodized aluminum, and grounded.

Insulating support plates 3, such as ceramics, are provided at the bottom of the processing chamber 2, and on the upper part of the insulating support plates 3, roughly for mounting a substrate to be processed, for example, a semiconductor wafer W having a diameter of 8 inches. The cylindrical susceptor support 4 is provided. Moreover, on the susceptor support 4, the susceptor 5 which comprises a lower electrode is provided, and the high-pass filter (HPF) 6 is connected.

The heat exchange chamber 7 is installed inside the susceptor support 4, and the heat exchange medium circulates from the outside through the heat exchange medium inlet tube 8 and the heat exchange medium discharge tube 9, and the susceptor 5. It is comprised so that the semiconductor wafer W can be hold | maintained at predetermined temperature via. Moreover, such temperature is set as the structure controlled automatically by a temperature sensor (not shown) and a temperature control mechanism (not shown).

Moreover, on the susceptor 5, the electrostatic chuck 11 for attracting and holding the semiconductor wafer W is provided. The electrostatic chuck 11 has, for example, a configuration in which the conductive thin film electrode 12 is sandwiched from above and below by polyimide resin, and is, for example, 1.5 from a DC power supply 13 provided outside the process chamber 2. When a voltage of V is applied to the electrode 12, the wafer W is attracted and held on the upper surface of the electrostatic chuck 11 by the coulomb force. Of course, instead of such an electrostatic chuck, the edge of the wafer W may be pressed by a mechanical clamp, and the wafer W may be held on the susceptor 5.

In addition, a gas passage 14 for supplying, for example, He gas or the like to the back surface of the semiconductor wafer W is provided to the insulating plate 3, the susceptor support 4, the susceptor 5, and the electrostatic chuck 11. The semiconductor wafer W is maintained at a predetermined temperature via a heat transfer medium such as He gas.

In the periphery of the susceptor 5, an approximately annular focus ring 15 is provided to surround the electrostatic chuck 11. The focus ring 15 is made of conductive silicon, for example, and has a function of effectively injecting ions in the plasma into the semiconductor wafer W.

The upper electrode 21 is supported in the upper part of the process chamber 2 via the insulating member 25 and the shield ring 55. The upper electrode 21 faces the electrode support 22 made of aluminum and the susceptor 5 in parallel, for example, and has an electrode plate 23 made of silicon, for example, having a plurality of discharge holes 24. Have The susceptor 5 and the upper electrode 21 are spaced apart, for example, about 10 to 60 mm.

The gas inlet 26 is provided in the electrode support 22, and is connected to the gas supply pipe 27. In addition, it is connected to the process gas supply source 30 via the valve 28 and the mass flow controller 29, and etching gas or other process gas is introduced into the process chamber 2.

As the processing gas, for example, a gas containing a halogen element such as fluorocarbon gas (CxFy) or hydrofluorocarbon gas (CpHqFr) can be used.

In the lower part of the processing chamber 2, an exhaust pipe 31 connected to an exhaust device 35 such as a vacuum pump is connected. The exhaust device 35 includes a vacuum pump such as a turbo molecular pump, and the processing chamber 2 can be sucked to an arbitrary decompression degree of, for example, 10 mTorr to 1000 mTorr.

The gate valve 32 is provided in the side wall of the process chamber 2, and the semiconductor wafer W is conveyed between adjacent load lock chambers (not shown) in the state which opened the gate valve 32. have.

Next, the high frequency electric power supply system of this plasma apparatus 1 is demonstrated. First, the upper electrode 21 is supplied with power from the first high frequency power supply 40 through which the high frequency power of the frequency is 27-150 MHz, for example, via the matching unit 41 and the feed rod 33. It becomes the structure that becomes. In addition, a low-pass filter (LPF) 42 is connected to the upper electrode 21.

By applying a high frequency in this manner, it is possible to form a high-density plasma in a preferable dissociation state in the processing chamber 2, and the plasma processing under low pressure conditions becomes possible. As the high frequency power supply 40, for example, a 60 MHz one can be used.

On the other hand, with respect to the susceptor 5 serving as the lower electrode, the power from the high frequency power supply 50 that outputs a high frequency power having a frequency of, for example, 4 MHz or less is supplied via the matching unit 51. By applying a frequency in this range, it is possible to impart an appropriate ionic action to the semiconductor wafer W without damaging it.

In such a plasma processing apparatus 1, the plasma processing vessel inner member according to the present embodiment is, for example, an inner wall 2a of the processing chamber 2, an insulating support plate 3, and a susceptor support (exposed to plasma during processing). 4), the susceptor 5, the electrostatic chuck 11, the focus ring 15, the insulating member 25, the shield ring 55 and the like can be adapted.

2 is a schematic cross-sectional view of the plasma processing vessel inner member 100 according to the present embodiment. Figure 2a is immediately after the thermal spray spray, Figure 2b is CO ₂ After blasting. As shown in FIG. 2A, the thermal spraying film 110 is formed in the surface of the base material 120 of the plasma processing container inner member made from Al, for example. As the thermal spraying film 110, alumina (Al ₂ O ₃ ), rare earth oxide, polyimide, polybenzozimidazole, or the like can be used.

Conventionally, when resins, such as a polyimide, are used for base material protection, the polyimide plate of thickness 1.5mm is provided on the Al base material, for example, and when resin deteriorated by use in plasma, the resin was replaced.

Conventional thermal spraying has been performed by impact at the time of impact due to heat and jetting speed, but here, the thermal spraying is performed only by the impact at the time of impact due to jetting speed. Thereby, the spraying of the film thickness of about several mm became possible, and it became possible to use as a sprayed coating.

In addition, Al ₂ O ₃ Thermal Spray, Y ₂ O ₃ In order to form a thermal sprayed coating, the atmospheric plasma spraying method or the plasma spraying method in the atmosphere which does not contain oxygen substantially is suitable, but a high speed frame spraying or an explosion spraying method is also applicable.

The film immediately after these sprays is very uneven, and when it is used inside the plasma processing vessel in such a state, particles are likely to generate due to collision of ions in the plasma, particularly in the fracture layer (crack layer) of the convex portion. It may cause deterioration.

Therefore, as shown in FIG. 2B, when the film immediately after the thermal spraying is CO ₂ blasted, the unevenness of the surface is flattened, and a state in which the plasma processing container inner member is used for a predetermined time in the plasma processing container can be realized, and the initial particle It can suppress occurrence. In addition, the thermal sprayed coating surface 131 of FIG. 2A is cut by the thickness t1 by this process.

The CO ₂ blast is performed under the conditions of, for example, a pressure of 2.5 to 4.2 kgf / cm 2, a nozzle diameter of 16 mm, a distance of 15 mm from the nozzle to the sprayed surface, a dry ice particle diameter of 0.3 to 2.0 mm, and a dry ice rate of 0.5 kg / min. Y ₂ O ₃ When using sprayed film, and the film thickness loss (t1) by blasting CO ₂ is preferably less than 10㎛.

3 is a cross-sectional view schematically showing a process in which the plasma processing vessel inner member 100 according to the first embodiment is reproduced. FIG. 3A shows the initial state (CO ₂ blast completed before use), FIG. 3B shows the CO ₂ for regeneration after use in a plasma processing vessel. After blasting, FIG. 3D shows the state after respray. The respraying here means spraying again on the thermal sprayed coating after use in a plasma processing container and before plasma processing.

FIG. 3A shows a thermal sprayed film 110 formed on the surface of the substrate 120 of the plasma processing vessel inner member 100 made of Al, for example, to planarize the surface by CO ₂ blasting. Alumina, rare earth oxides, polyimides, polybenzoimidazoles, or the like can be used for the thermal sprayed film 110.

Y ₂ O _{3, which} is a rare earth oxide, is thermally sprayed such that the thickness t = 50 to 2000 μm, and the polyimide or polybenzoimidazole is, for example, a thickness t = 2 to 3 mm. These values are considered to be reasonable in view of the effects of damage prevention and economics. When this is used in plasma, as shown in FIG. 3B, the thermal sprayed coating surface 133 of FIG. 3A is consumed by the thickness t2.

Table 1 shows the reduction amount t2 of the film thickness when the plasma processing vessel inner member coated with various materials is left in the plasma processing apparatus. In addition, the used plasma processing apparatus is a parallel plate type plasma etching apparatus, provided that the chamber pressure is 40 mTorr, RF power is 1500 W, and the etching gas is a mixed gas of CF ₄ / Ar / O ₂ = 100/20/200. It was left for 20 hours.

Type of membrane Consumption t2 (㎛) Y ₂ O ₃ Thermal Spray 30.0 Al ₂ O ₃ Thermal Spray 109.0 Al ₂ O ₃ Ceramic 88.5 SiO ₂ 355.0

As shown in Table 1, even under an atmosphere containing a halogen compound, the plasma corrosion resistance of the _{Y 2 O 3, Al 2 O} 3 it can be seen that it is good. In particular, under the above conditions, among the four kinds of films, Y ₂ O ₃ The thermal spray coating is the least consumed and the plasma resistance is excellent.

Next, this Y ₂ O ₃ With respect to the sprayed coating it will be described in the case of running a CO ₂ blasting. CO ₂ Blast was performed under the conditions of the pressure of 2.5-4.2 kgf / cm <2>, the nozzle diameter of 16 mm, the distance of 15 mm from a nozzle to a sprayed surface, the dry ice particle diameter of 0.3-2.0 mm, and the dry ice rate of 0.5 kg / min.

Blast time 30sec. And 60 sec., The blast amounts were 5 µm and 10 µm, respectively. By this process, as shown in FIG. 3C, the thermal sprayed coating surface 135 in FIG. 3B is cut by thickness t3, the unevenness | corrugation which generate | occur | produced on the surface can be removed, and a foreign material can be removed. Further, it is, Y ₂ O ₃ film thickness loss (t3) according to the CO ₂ blasting In the case of a thermal sprayed coating, 10 micrometers or more, Preferably 20 micrometers or more are suitable.

Next, as shown in FIG. 3D, the same material as that of the thermal sprayed coating 110 is resprayed. In the alumina, rare earth oxide, polyimide, or polybenzoimidazole thermal sprayed coating, there is no crystal change in the film due to the change over time, and by respraying, new and old crystals are continuously formed at the bonding surface and regenerated as new products. . After this, CO ₂ blasting may be performed again to planarize irregularities on the surface of the thermal sprayed coating.

As described above, according to the reproducible plasma processing vessel inner member and the manufacturing method thereof, and the method of regenerating the plasma processing vessel inner member which performed the initial particle countermeasure according to the first embodiment, the initial particle generation can be suppressed, even after use. It is possible to provide a plasma processing container inner member which can be reproduced as new.

Further, for example, the method of removing the surface of the inner member of the plasma processing vessel after use is preferably, but not limited to, a CO ₂ blast in which foreign matter does not remain on the surface. As long as the surface can be cleaned and cleaned with a chemical solution or the like without damaging the thermal sprayed coating or the base material, polishing by abrasives such as blast using alumina or SiC, sand friction, or the like is also possible. In addition, there is a possibility that chemical polishing by etching with a chemical liquid can also be applied.

4 is a cross-sectional view schematically showing a process in which the plasma processing vessel inner member 100 according to the second embodiment is regenerated. 4A shows an initial state, FIG. 4B shows a state after use in a plasma processing vessel, and FIG. 4C shows a state after respraying.

In the second embodiment, as in the first embodiment, the CO ₂ blast is not performed after use in the plasma processing container, and the thermal spraying is performed again using the same spray film as the spray film before use after use in the plasma processing container. Re-spawn). Operating conditions of the second embodiment is the same as that of the first embodiment in the points other than to execute the CO ₂ blasting.

By carrying out the respray using the same material as the sprayed film before the plasma treatment without performing the CO ₂ blast, there is an effect that the sprayed film at the time of respraying becomes more accessible. This is because the thermal sprayed coating at the time of respraying becomes more likely to adhere than when the unevenness after the plasma treatment is relatively flat. Thereby, the plasma processing container whose surface was deteriorated by use in plasma can be reproduced like a new article.

(Third embodiment)

Next, a third embodiment of the present invention will be described in detail with reference to the drawings.

FIG. 5 shows an internal structure of a plasma etching apparatus as a plasma processing apparatus, in which a plurality of various apparatus components formed in a predetermined shape are provided in a predetermined position in the apparatus main body 201 of the plasma etching apparatus, that is, in the processing chamber 221. have.

Specifically, the lower electrode 202 is provided below the processing chamber 221 and the electrostatic chuck 204 which adsorbs and holds the semiconductor wafer W as a to-be-processed object is provided in the lower electrode 202. The lower electrode 202 is supported by a lifting shaft 205 that can be lifted in the direction of arrow A. The lifting shaft 205 is connected to the high frequency power supply 207 via the matching unit 206, and the lifting shaft 205 is inserted through the annular member 209 made of a conductive material.

In addition, the lower electrode 202 is protected by the electrode holding member 229, and a flexible bellows formed of a conductive material such as stainless steel between the electrode protecting member 229 and the bottom surface of the apparatus main body 201. 208 is seated. In addition, a focus ring 210 formed of a conductive member or an insulating member is installed on an upper side of the lower electrode 202, and a first bellows cover 211 is installed vertically on a bottom surface of the focus ring 210. In addition, a second bellows cover 212 is provided from the bottom surface of the apparatus main body 201 so that a part of the first bellows cover 211 overlaps.

An upper electrode 213 formed of a conductive material is provided above the processing chamber 221 so as to face the lower electrode 202, and the upper electrode 213 is connected to the high frequency power source 215 via the matching unit 214. Connected. In addition, a plurality of gas discharge holes 216 are provided in the upper electrode 213, and reactive gas containing CF (fluorocarbon) gas is supplied from the gas supply port 217 provided on the upper surface of the apparatus main body 201. It is supplied to the process chamber 221 via the gas discharge hole 216. That is, the gas supply port 217 is connected to the gas supply source 220 via the flow rate control valve 218 and the on / off valve 219, and the reaction gas from the gas supply source 220 controls the open / close valve 219 and the flow rate control. It is supplied to the gas supply port 217 via the valve 218, is discharged from the gas discharge hole 216, and is introduced into the processing chamber 221.

In addition, the upper electrode 213 is held by a shield ring 222 formed of an insulating member, and the shield ring 222 is provided with a protective ring 223 at the edge, and from the outer circumference of the protective ring 223. Shield member 224 is installed vertically.

In addition, a discharge hole 225 is provided at the bottom of the apparatus main body 201, and the discharge hole 225 is connected to the vacuum pump 226, and a workpiece to be processed below the apparatus main body 201. The conveyance hole 227 is provided and carrying in and out of the semiconductor wafer W is performed.

In the plasma etching apparatus configured as described above, the lifting shaft 205 is moved after the lifting shaft 205 is moved in the direction of the arrow A by a driving mechanism (not shown) to adjust the position of the semiconductor wafer W. Glow discharge occurs when the high frequency power of, for example, 13.56 MHz is applied to the lower electrode 202 and the upper electrode 213 from the high frequency power supplies 207 and 215.

On the other hand, when the processing chamber 221 is depressurized to a predetermined vacuum atmosphere by the vacuum pump 226, and the reactive gas from the gas supply source 220 is supplied to the processing chamber 221, the reactive gas is converted into plasma through the glow discharge. The plasma is confined between the lower electrode 210 and the upper electrode 213 by the focus ring 210 and the shield ring 222, and as a result, the semiconductor wafer W, which has a predetermined masking, is desired. Micromachining is performed.

By the way, the semiconductor wafer W is finely processed by the dry etching process. On the other hand, the surface of various device components exposed to the plasma atmosphere, such as the focus ring 210 and the shield ring 222, are also etched and consumed. In addition, depending on the degree of consumption, it is necessary to replace these consumed device parts with new ones.

However, if such consumed device parts are always replaced with new parts, the production cost will rise or if the new parts are out of stock, the production line will be stopped.

Therefore, in this 3rd Embodiment, when deform | transforming into the partial shape of each component, the said deformation | transformation part is cut | disconnected, and the part formed in the shape before deformation | transformation is welded and bonded to the location where the said deformation | transformation part was cut off.

6 is a cross-sectional view of the focus ring 210, in which the focus ring 210 has a ring shape consisting of an inner diameter D1 and an outer diameter D2 in the case of ordinary new parts, and has an end portion attached to the inner circumferential surface ( 230).

The focus ring 210 is a conductive material such as Al or SiO ₂ In the case of an insulating material, the conductive material improves the uniformity of the plasma around the semiconductor wafer W. In the case of the insulating material, a high density plasma is formed on the semiconductor wafer W. Although the focus ring 210 is exposed to a plasma atmosphere in any way, its surface is etched and shattered by the plasma, and as a result, as shown in FIG. 7A, the focus ring 210 is part of it. Is deformed and the deformable portion 210a is formed.

Therefore, in the present embodiment, as shown in Fig. 7B, a new part 210b having a dimensional shape before deformation is separately manufactured, while the focus ring 210 is cut along the cut line C1 of Fig. 7A to deform the portion. As shown by "B" in FIG. 7C, the new component 210b is welded and bonded to a position corresponding to the deformable portion 210a, and the end attachment portion 230 as shown in FIG. 6 is removed. The focus ring 210 which has on the inner peripheral surface is manufactured. And the focus ring 210 repaired and manufactured in this way is provided in the predetermined position of a plasma etching apparatus, and the desired etching process is restarted by this.

As described above, according to the present embodiment, even when the focus ring 210 is etched and a part of the shape is deformed, the desired focus ring 210 is removed by only removing the deformed portion 210a and replacing it with a new part 210b. Therefore, it is not necessary to replace the deformed focus ring with a new focus ring at all times, so that a device part as a substitute can be repaired by a simple method, and the cost can be reduced.

It should be noted that the third embodiment can be similarly applied to other device components provided in the plasma etching apparatus, such as the shield ring 222, the protective ring 223, the shield member 224, and the like. none.

8 and 9 show a case where the reproducing method of the third embodiment is applied to the shield ring 222.

That is, FIG. 8 is a cross-sectional view of the shield ring 222. The shield ring 222 has a ring shape including an inner diameter D3 and an outer diameter D4 in the case of a normal new component, and a thin portion 231. FIG. ) Is formed.

Since the shield ring 222 is exposed to a plasma atmosphere similarly to the focus ring 210, as shown in FIG. 9A, a part of the thin portion 231 is etched and deformed by a change over time. Portion 222a is formed.

Therefore, in the present embodiment, as in the case of the focus ring 210 (FIG. 7), as shown in FIG. 9B, a new part 222b having a dimension shape before deformation is separately manufactured, while the cut line of FIG. 9A is produced. The shield ring 222 is cut along (C2) to remove the deformed portion 222a, and as shown by "E" in FIG. 9C, the new part 222b is placed at a position corresponding to the deformed portion 222a. By welding and joining, a shield ring 222 having a thin portion 231 as shown in FIG. 8 is manufactured. And the shield ring 222 which was repaired and manufactured in this way is again provided in the predetermined position of a plasma etching apparatus, and a desired etching process can be restarted by this.

In this manner, similarly to the case of the focus ring 210, even when the shield ring 222 is etched and a part of the shape is deformed, the desired shield is merely removed by removing the deformed portion 222a and replacing it with a new part 222b. The ring 222 can be obtained, and the deformed focus ring does not always need to be replaced with a new focus ring, so that an apparatus part as a substitute can be manufactured by a simple method, and the cost can be reduced.

In addition, this 3rd Embodiment is not limited to the said embodiment. In the above embodiment, a so-called ion assist plasma etching apparatus has been described as an example, but needless to say, the plasma etching apparatus may be, for example, a magnetic field assist system.

As described above, according to the present invention, a surface deteriorated by use in plasma of an inner member of a plasma processing vessel coated with a thermal sprayed coating of alumina, rare earth oxide, polyimide or polybenzoimidazole. By respraying the same material as the thermal sprayed coating in the desert, it becomes possible to regenerate a plasma processing container whose surface has been degraded by use in a plasma like a new product.

In addition, when the shape of a part of a part installed at a predetermined position in the plasma processing container is deformed by the plasma process, after the deformed part is removed, the part formed in the shape before deformation is joined to a location where the deformed part is removed. Therefore, even when a part of the shape of the device part is deformed, it is not necessary to always replace the deformed device part with a new device part, and the device part as a substitute can be manufactured by a simple method, and the cost can be reduced. Moreover, since there is no stock of new parts, it can avoid that a production line stops for a long time.

In addition, by coating the surface of the substrate of the inner member of the plasma processing vessel with a thermal sprayed coating of alumina, rare earth oxide, polyimide or polybenzoimidazole, and smoothing the surface by CO ₂ plasma before use, initial particle generation is suppressed. It becomes possible.

As mentioned above, although preferred embodiment of the regeneration method of the plasma processing container inner member and the reproducible plasma processing container inner member which concerns on this invention was described referring an accompanying drawing, this invention is not limited to this example. It will be apparent to those skilled in the art that various changes or modifications can be made within the scope of the technical idea described in the claims, and that they naturally belong to the technical scope of the present invention.

INDUSTRIAL APPLICABILITY The present invention is applicable to the regeneration of a plasma processing container whose surface has been degraded by use in a plasma, such as a new article of an internal member, and is particularly applicable to manufacturing processes such as semiconductor devices and LCD substrates.

1 is a configuration diagram of a plasma processing apparatus according to the first and second embodiments.

2A and 2B are schematic cross-sectional views of the plasma processing vessel inner member according to the first embodiment.

3A to 3D are cross-sectional views schematically showing a process of regenerating the inner member of the plasma processing vessel according to the first embodiment.

4A to 4C are cross-sectional views schematically showing a process of regenerating the plasma processing vessel inner member according to the second embodiment.

5 is an internal structural diagram of an etching apparatus as a plasma apparatus according to the third embodiment.

6 is a cross-sectional view of the focus ring.

7A to 7C are diagrams showing one embodiment of a method for regenerating a component for a plasma device according to the third embodiment.

8 is a cross-sectional view of the shield ring.

9A to 9C are diagrams showing another embodiment of the method of reproducing a component for a plasma device according to the third embodiment.

Claims (1)

The same material as that of the thermal spray coating for the thermal spray coating deteriorated by use in plasma of the inner member of the plasma processing vessel whose surface of the substrate is coated with any of alumina, rare earth oxide, polyimide or polybenzoimidazole. Characterized by re-spray Regeneration method of a plasma processing vessel.

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