JPH11191555A - Plasma cvd apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a plasma CVD apparatus in which an insulating member can be covered up to a complicated part and which surely prevents an abnormal discharge, by a method wherein a thermosetting polyimide or thermosetting polybenzimidazole insulating film is formed in a corner part on the inner wall surface of a reaction vessel formed of a noninsulating member. SOLUTION: A reaction vessel 10 is constituted in such a way that its base material is formed of a noninsulating metal such as aluminum or the like, that a film 10a which is formed of an insulating resin to be a prescribed thickness (e.g. 30 μm or higher) is formed on the whole face of its inner wall which is exposed to a plasma, and that an abnormal discharge is prevented in a plasma discharge. Shutters 21, 31 are formed of a sheet body which uses a noninsulating metal as a base material, and insulating resin films 10a are formed on their main surfaces on sides exposed to a plasma. As the resin, a thermosetting polyimide resin or a thermosetting polybenzimidazole resin is suitable. The resin is featured in such a way that its mass change at a high temperature is extremely small, that its chemical heat resistance is excellent, and that its glass transition point is higher than a general reaction temperature.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma CVD (Chemical Vap) which is capable of preventing an abnormal discharge mainly occurring between an electrode and a metallic member around the electrode.
or Deposition (chemical vapor deposition) apparatus.

[0002]

2. Description of the Related Art In recent years, various objects to be processed, such as wafers, have been vigorously converted into a semiconductor, converted into a semiconductor, made nonconductive, or formed an electronic circuit by plasma CVD.

[0003] There are various means for generating plasma, but one which can perform high-speed processing at a lower temperature includes a method in which an electrode is first provided in a reaction vessel and a high-frequency voltage is applied thereto.
At this time, by sending the active gas (reaction gas) into the reaction vessel, the plasma is converted into radicals or ions in the form of a plasma, so that the product of the reaction of the active species is deposited in a thin film on the object to be processed. Or the surface of the object to be processed is etched.

In the apparatus for processing a surface of an object to be processed using such a plasma, a reaction vessel itself may be made of a metal such as stainless steel or aluminum, or made of an insulator such as quartz. In particular, in the case of a metal reaction vessel, there is an advantage that the apparatus cost is low, but there is a risk of abnormal discharge between the electrode and the metal side wall. It is necessary to consider the distance between them and the strength of the applied voltage, and to configure the device. In particular, in the case where a corner is formed in the vicinity of the position where the electrode is placed, the lines of electric force are likely to concentrate on that portion because the corner is sharp. For this reason, abnormal discharge weakens normal discharge in other parts and affects the processing speed. For example, when plasma is formed using oxygen-containing carbon tetrafluoride (CF ₄ / O ₂ ) as an active gas, Depending on the degree of the abnormal discharge, an abnormal product such as a CF polymer ((CF) n) is produced as a by-product. That is, in any case, the abnormal discharge changes the reaction condition in the reaction vessel and becomes one of the unstable factors. Therefore, the abnormal discharge is one of the problems to be solved by all means.

In order to prevent such abnormal discharge, Japanese Patent Application Laid-Open No. 2-125430 discloses the following technique. This relates to a cold-wall type plasma CVD apparatus having a mechanism for transporting a wafer into a reaction vessel, in which a metal and a load lock chamber for automatically transporting a wafer into the reaction vessel are previously formed of metal. It was partitioned by a partition made of alumina, but instead of using a technique using an alumina plate,
A technique using a material coated with silicon dioxide, a technique in which a reaction vessel itself is made of aluminum, and an entire wall surface thereof is alumite-treated to provide an alumina (Al ₂ O ₃ ) layer are disclosed.

[0006]

However, the technique disclosed in the above publication has the following problems, and improvement is desired.

That is, in the method of covering with an alumina plate, for example, the insulating member covers a complicatedly penetrated portion such as an inlet for an etcher (reaction gas) or a top plate or a boundary portion between a bottom plate and a side plate of a reaction vessel. Can not. In addition, in the case of coating with silicon nitride and silicon dioxide, and further performing alumite treatment on all wall surfaces, the film thickness cannot be made too large from the viewpoint of crack prevention. As a result, there is a problem that the insulating film is destroyed and lacks durability. Further, if the insulating film is destroyed, it must be mechanically scraped off and a new film must be formed again.

Accordingly, the present invention provides a plasma CV which is extremely easy to manufacture, does not generate abnormal discharge, and has excellent durability.
The purpose is to provide a D device.

[0009]

In order to achieve the above object, the present invention relates to a plasma CVD apparatus, wherein a thermosetting polyimide or a thermosetting polyimide is formed on a corner of an inner wall surface of a reaction vessel formed of a non-insulating member. It is characterized in that an insulating film of polybenzimidazole is formed.

As a result, abnormal discharge during the reaction can be reliably prevented. In addition, this thermosetting resin is excellent in heat resistance, plasma resistance, mechanical strength, chemical resistance, etc., and is hard to crack as compared with the conventional inorganic insulating layer. Thus, it has excellent durability and is suitable as an insulating material. In addition, there is an effect that the reaction vessel can be easily manufactured by coating and heating the prepolymer and over the details of the reaction vessel.

Here, the corners on which the insulating film is formed vary depending on the shape of the container, but the edges of the entrance and exit of the object to be processed, the etcher inlet, the air inlet, and the like. This is the edge of the exhaust port.

Here, if a wholly aromatic polyimide having a heat resistance of 300 ° C. or higher is used as the thermosetting polyimide, 30%
Even when the reaction is performed at a higher temperature of 0 ° C. or higher, the above-described effect of preventing abnormal discharge can be obtained.

Further, the thermosetting polyimide includes pyromellitic dianhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride and 3,3 ′, 4,4′-benzophenone tetraanhydride. An organic acid dianhydride selected from the group consisting of carboxylic dianhydrides, and P-phenylenediamine;
A polycondensate with an organic diamine selected from the group consisting of 4,4'-diaminodiphenyl and 4,4'-diaminodiphenyl ether can be used.

Further, the above-mentioned thermosetting polybenzimidazole includes [poly (2,2′-metaphenylene-5,5 ′)
-Bibenzimidazole)].

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A plasma CV to which the present invention is applied
Apparatus D is not intended for apparatuses using a CVD method using heat or light (thermal CVD, optical CVD method) that does not rely on plasma. For example, it has a pair of electrodes, generates plasma, and deposits a thin film on an object to be processed. It is intended for an apparatus used for forming or etching an object to be processed by plasma. Hereinafter, an electrode type plasma CVD according to an embodiment of the present invention.
The apparatus will be described with reference to the drawings. FIG. 1 shows an example of a continuous parallel electrode type plasma CVD apparatus 1 for dry etching (hereinafter, simply referred to as a “CVD apparatus”) for manufacturing a semiconductor. FIG. 1 is a cross-sectional view illustrating a configuration of a CVD apparatus.

As shown in FIG. 1, the CVD apparatus 1 has load lock chambers 20 and 30 provided on both sides of a reaction vessel 10 having electrodes 11 and 12 disposed in parallel and opposed to each other. . A voltage is applied to the electrodes 11 and 12 by a high frequency power supply. A partition 13 between the reaction container 10 and the load / lock chamber 20 has a loading port 13 for loading a wafer W to be processed,
In the partition wall between the lock chamber 30 and the lock chamber 30, a carry-out port 14 for carrying out the wafer W subjected to the etching is opened. An etcher inlet 16 for introducing an etcher, for example, carbon tetrafluoride (CF ₄ ), and an air inlet 17 are opened in a top plate 15 of the reaction vessel 10, and a vacuum line (not shown) is provided in a bottom plate 18. Is connected to an exhaust port 19.

The loading port 13 has a reaction vessel 10 and a load
A shutter 21 for partitioning the lock chamber 20 and a shutter 31 for partitioning the reaction vessel 10 and the load / lock chamber 30 are provided at the carry-out port 14 so as to be movable up and down. A loading port is opened on the side wall on the upstream side in the transport direction of the load lock chamber 20, and a shutter 22 that separates the outside air from the load lock chamber 20 is provided at the loading port. On the side wall, a carry-out port is provided, and a shutter 32 for separating the outside air from the load lock chamber 30 is provided at the carry-out port.
Is provided.

The reaction vessel 10 has a base material formed of a non-insulating metal (eg, aluminum), and a coating 10a of a predetermined thickness (eg, 30 μm or more) made of an insulating resin over the entire inner wall exposed to plasma. Is formed to prevent abnormal discharge during plasma discharge. Shutter 2
Similarly, reference numerals 1 and 31 also denote a plate body made of a non-insulating metal as a base material, and a coating 10a of an insulating resin is formed on the main surface exposed to the plasma. This resin is not particularly limited as long as it is excellent in heat resistance and plasma resistance, but in the present embodiment, a thermosetting polyimide or thermosetting polybenzimidazole resin is used. This is because these resins have a very small change in mass at a high temperature (for example, the change in mass when exposed to 200 to 300 ° C. for 20,000 hours is less than 5%), that is, they are excellent in chemical heat resistance, and Most of them have a glass transition point higher than a general reaction temperature (200 ° C. or higher), that is, have excellent physical heat resistance, and have a structure in which electrons are delocalized. This is because resistance can be expected. In the CVD apparatus 1 having such a configuration, the etching process of the wafer W is performed as follows.

The wafer W is transferred to the load lock chamber 20 by a transfer means (not shown), and is placed in a central portion, and then is preliminarily exposed to vacuum. At this time, the vacuum line is activated by operating the vacuum line of the reaction vessel 10, and when the degree of vacuum is about the same as the degree of vacuum in the load lock chamber 20 (of course, at this time, the entrances 13 and exits are opened by the shutters 21 and 31). 14 is closed.), The shutter 21 is lowered, and the carry-in port 13 is opened. Then, the wafer W in the load / lock chamber 20 is guided into the reaction vessel 10 and
Placed on top. Then, etching processing is performed by the generated plasma.

When the etching process is completed, the wafer is conveyed to the downstream load / lock chamber 30 which has been adjusted to a vacuum state in advance, and is carried out of the system. The above operation is repeated, and the batch processing is continuously performed.

Although only one wafer is shown in the drawing, a plurality of wafers may be arranged on the electrode in a disk shape and a plurality of etching processes may be performed at one time.

Next, a method for forming the above-mentioned film will be described in detail.

First, a method for forming a thermosetting polyimide film will be described in detail.

The thermosetting polyimide is prepared by adding an equivalent of an organic acid dianhydride and an organic diamine in an organic polar solvent such as N-methylpyrrolidone, dimethylacetamide, dimethylformamide, etc. (At room temperature or lower), a polycondensation reaction is first performed to obtain a polyamic acid. Next, a solution obtained by diluting the obtained polyamic acid to a predetermined concentration with the same solvent (for example, the polyamic acid content is 10 to 18% by weight based on the whole solution) is applied to the inner wall surface of the reaction vessel 10 and the shutters 21 and 31. One main surface facing the reaction space is applied by spraying, brushing, impregnating the member with the polyamic acid solution, and heating the same at a high temperature of 200 ° C. or more to evaporate the solvent and to improve the imide. The insulating film 10a having a predetermined thickness is formed by closing the ring.
Is obtained. From the viewpoint of forming a dense film, it is desirable to apply the polyamic acid repeatedly even if the thickness is the same.

[0025]

Embedded image (See Table 1 below for specific examples of Ar and Ar 'in the chemical formula.)

The heating after the application of the polyamic acid,
Rather than heating from a normal temperature to a predetermined temperature of 200 ° C. or more at once, it is preferable to heat in a stepwise manner such that the temperature is gradually raised, kept at that temperature for a predetermined time and then raised to the next temperature. . Specifically, first, from room temperature to 100 ° C. to 200 ° C.
To 10 ° C over 10 to 60 minutes and at this temperature about 30 to 90
For example, a method of raising the temperature to 300 ° C. to 400 ° C. over 10 minutes to 60 minutes, and keeping the temperature at that temperature for about 30 to 90 minutes to finish all the steps. This 100 ℃ -20
The heat treatment at 0 ° C. at a relatively low temperature is a step of evaporating the solvent, and the heat treatment at a higher temperature of 300 ° C. to 400 ° C. is a step of imide ring closure. By performing the reaction in this manner, the imide ring-closing reaction is performed after the solvent is vaporized and removed, so that a dense film is formed while suppressing the generation of bubbles.

Since the polyimide used here is a linear polymer but has a thermosetting property, it is cured by applying a resin to a non-insulating wall forming a base of each member and then performing a heat treatment. Excellent coating processability. Further, this thermosetting polyimide is superior to other resins in chemical resistance, physical heat resistance, chemical resistance or mechanical strength due to its physicochemical properties.
Therefore, high plasma resistance can be expected, and it can be said that this is an extremely effective insulating material for obtaining a CVD apparatus having higher durability.

Of these thermosetting polyimides, thermosetting wholly aromatic polyimides are more preferable. This is because this wholly aromatic polyimide is a resin having better heat resistance.

A thermosetting wholly aromatic polyimide is a linear polymer having, in addition to an imide group constituting a basic repeating unit, an aromatic group having one or two organic groups bonded therein in the repeating unit. is there.

When there are two or more aromatics in the repeating unit, they may be directly linked,
It may be bonded through each group such as methylene, ether and carbonyl.

As the organic acid dianhydride as a raw material of the thermosetting polyimide, taking a wholly aromatic polyimide as an example, as shown in Table 1, pyromellitic dianhydride (a), 3,
3 ', 4,4'-biphenyltetracarboxylic dianhydride (b), 3,3'4,4'-benzophenonetetracarboxylic dianhydride (c) and the like. On the other hand, as the organic diamine, P-phenylenediamine (d), 4,
4'-diaminodiphenyl (e), 4,4'-diaminodiphenyl ether (f) and the like. Polyimides can be synthesized by arbitrarily combining them. For example, if the glass transition point (Tg) is used as an index, those having a higher temperature (for example, pyromellitic dianhydride (a) and 4,4 Combination of '-diaminodiphenyl ether (f), combination of 3,3', 4,4'-biphenyltetracarboxylic dianhydride (b) and P-phenylenediamine (d), or 4,4'-biphenyltetra The combination of carboxylic dianhydride (b) and 4,4′-diaminodiphenyl (e)) is considered to have better resistance when an insulating film is formed, so that the glass transition temperature is as high as possible (300 ° C.). It is desirable to synthesize and use the following. Representative examples of these commercially available products are also shown in the rightmost column of Table 1.

[0032]

[Table 1]

Here, it is desirable that the solvent used in each reaction has a purity as high as possible. Especially,
Care should be taken to minimize the amount of inorganic substances, for example, conductive substances such as Na, K, Fe, Ni, Cr, and Al mixed therein. This is because, for example, when a semiconductor is manufactured by the present CVD apparatus, it becomes a contamination source.

Next, a method for forming a thermosetting polybenzimidazole film will be described.

The thermosetting polybenzimidazole is obtained by equivalence of an isophthalic acid diester such as diphenyl isophthalate and an aromatic tetraamine such as 3,3 ', 4,4'-tetraaminobiphenyl, dimethylacetamide,
It is obtained by heating N-methylpyrrolidone or the like in an organic polar solvent to carry out a polycondensation reaction. This is appropriately diluted with the same solvent, and applied to the wall surface of the reaction vessel and the shutter as described above. Then, by performing heat treatment at a temperature of about 200 ° C., a dense thermosetting insulating film is formed. Here, as in the case of polyimide, it is not necessary to heat in stages, such as gradually raising the temperature, maintaining the temperature for a predetermined time, and then raising the temperature to the next temperature. This is because a reaction such as imide ring closure is not required.

This thermosetting polybenzimidazole is
It is more desirable as an insulating material because it has better heat resistance and flame retardancy than the above-mentioned thermosetting polyimide. In particular, it is obtained by a polycondensation reaction of the above-mentioned diphenyl isophthalate and 3,3 ′, 4,4′-tetraaminobiphenyl as shown in the following chemical formula [poly (2,2′-metaphenylene-5,5 ′). -Bibenzimidazole)] is also excellent in that respect.

[0037]

Embedded image

The following several embodiments can be cited as the manner of forming the insulating film 10a. That is, only the thermosetting polyimide may be coated, or only the thermosetting polybenzimidazole may be coated. Further, in addition to coating with a thermosetting polyimide, a thermosetting polybenzimidazole which is more excellent in heat resistance and flame retardancy may be coated.
Furthermore, especially, the inner wall where plasma is easily concentrated is coated with thermosetting polybenzimidazole, and the other wall is coated with thermosetting polyimide, and the thickness of that part is formed thicker than other parts You may make it. In any case, abnormal discharge is particularly likely to occur at the edges of the carry-in port 13 and the carry-out port 14 of the reaction vessel 10, and at the edges of the etcher introduction port 16, the air introduction port 17, and the exhaust port 19. It is desirable to form a resin film so that at least the corners are sufficiently covered.

As described above, in the above-mentioned CVD apparatus, the insulating resin is coated on the inner wall of the reaction vessel, so that compared with the case where an alumina plate is used in order to prevent the abnormal discharge locally generated as before. Since the part which has entered complicatedly can be covered with the insulating member, abnormal discharge can be surely prevented. Also, compared to the case of coating with inorganic materials such as silicon 4-nitride, silicon dioxide, etc., and the entire wall surface being alumite-treated, the possibility of cracking due to repeated heating and cooling is extremely small, so the insulating film is formed thicker. can do. Therefore, even if it is exposed to plasma for a long time, the thickness of which is thicker than that of the inorganic insulating layer, it can withstand sufficiently. In addition, as described above, high plasma resistance can be expected due to characteristics of the resin such as excellent heat resistance (chemical heat resistance and physical heat resistance), chemical resistance, and mechanical strength. Furthermore, since both thermosetting resins are organic insulating materials, an effect of preventing contamination of semiconductor products by a non-insulating member which is a base material of the reaction vessel can be expected. In addition, even if a part of the insulating film is broken by the plasma, there is an advantage that it can be repaired by a simple method such as applying a prepolymer to the portion and heating it again.

[0040]

〔Example〕

The effect of preventing abnormal discharge in a CVD apparatus provided with a reaction vessel having an insulating film on the inner wall surface was verified based on the above embodiment.

First, an insulating film was formed under the following conditions.

A polyamic acid solution (containing 12% by weight of polyamic acid) obtained by polycondensing pyromellitic dianhydride with an equivalent of 4,4'-diaminodiphenyl in N-methylpyrrolidone at room temperature is reacted. After evenly applying to the wall of the container or shutter by spraying, put them in a hot air dryer and gradually raise the temperature to 150 ° C for 60 minutes, further raise the temperature to 300 ° C for 30 minutes, and finally to 400 ° C. The temperature was raised, heated for 20 minutes, taken out after cooling. This coating and heating treatment was repeated twice to form a thermosetting wholly aromatic polyimide film having a thickness of about 50 μm.

[Comparative Example]

In the comparative example, the inner wall surface of the aluminum container was subjected to alumite processing to obtain a thickness of 20.5 mm.
C as a reaction chamber with a μm Al ₂ O ₃ insulating layer
A VD device was used.

The reaction vessel having the insulating film formed thereon as described above and the shutter are mounted between the load and lock chambers.
A dry etching test was performed to examine the presence / absence of abnormal discharge on the inner wall surface, and further, the adhesion state of an abnormal substance considered to be a polymer ((CF) n).

Here, the test wafer has a thickness of 21 μm in advance.
Using a pre-deposited silicon oxide film of
As an etcher, CF4 gas and oxygen gas are supplied to a reaction vessel having a vacuum degree of 0.25 Torr and a temperature of 280 ° C. (a gas having a volume ratio of CF ₄ : O ₂ = 9: 1 is supplied). Dry etching was continuously performed on a plurality of wafers by applying a high-frequency voltage of 3.0 KW.

[Results of Test Etching]

First, in the CVD apparatus according to the example, the inside of the reaction vessel was observed after 10 minutes, and it was confirmed that there was no abnormal discharge in any case. Then, while observing from time to time, it was observed that there was no abnormal discharge, and the operation was stopped when 100 hours had passed. Next, the reaction vessel was detached and the inner surface of the vessel was checked. As a result, it was found that a dark brownish substance, which was considered to be a (CF) n polymer, was formed in a thin film shape. However, at this time, no special abnormality was found in the reaction condition such as the discharge state in the reaction vessel.

On the other hand, in the CVD apparatus according to the comparative example, no abnormal discharge was observed at first, and it was observed that abnormal discharge occurred particularly at the corners of the side plates of the container after about 50 hours. However, the etching test was continued for another 10 hours and stopped after a total of 60 hours. At that time, the reaction vessel was detached and the inside of the vessel was observed. As a result, a dark brown film was deposited and adhered to almost all the wall surfaces in an amount of about 1.5 to 2 times that of the example (this film was It was in the form of a thick film and was found to be quite high molecular weight.), And dry etching could not be continued.

As described above, in the CVD apparatus according to the embodiment,
Even though 100 hours had passed, no abnormal discharge was observed at all, and the situation could be continued further.
In the device, abnormal discharge began to occur after about 50 hours, and it was not possible to continue. Therefore, the device which was insulated with thermosetting polyimide was much more effective than the conventional device for preventing abnormal discharge. You can see that it is. It should be noted that a similar high abnormal discharge preventing effect was obtained when thermosetting polybenzimidazole was used.
This also confirms that thermosetting polyimide resin and thermosetting polybenzimidazole are excellent not only in heat resistance but also in plasma resistance at high temperatures.

In the CVD apparatus according to the example, the polymer adhering to the inner wall surface of the reaction vessel could be easily separated from the wholly aromatic polyimide film by spraying hot water, but in the comparative example, The peeling was difficult. That is,
This result indicates that the inorganic insulating film according to the comparative example is difficult to reproduce, whereas the insulating film according to the example can be easily reproduced.

[Other Matters]

Needless to say, the present invention is not limited to the above-described embodiment, and the following modified examples can be considered without departing from the gist of the invention.

(1) In the above embodiment, a thermosetting resin is used as the material of the insulating film. However, if the resin is excellent in plasma resistance, heat resistance, etc., other thermoplastic resins may be used. Polyimide or polybenzimidazole can also be used.

(2) The insulating film made of thermosetting polyimide or thermosetting polybenzimidazole may be formed not on the entire inner wall surface forming the reaction space as in the above embodiment.
At least at various corners where the electric field tends to concentrate, the effect of preventing abnormal discharge can be obtained. However, considering that the wall itself is gradually etched by plasma irradiation even in a flat area at the beginning, irregularities such as a concentration of an electric field will be formed in that area. It is desirable to form the above-mentioned insulating coating on flat wall surfaces other than the above.

(3) In the above embodiment, the case where dry etching is performed by plasma has been described. However, the present invention is not limited to this case. The case where metal oxides and the like are deposited in a film form by generating molecular active species by generated plasma. Can be applied in the same manner.

(4) In the above embodiment, an electrode type plasma CVD apparatus has been described, but the present invention is not limited to this.
It goes without saying that the present invention can be applied to any CVD apparatus that generates plasma in a reaction vessel.

[0059]

As described above, according to the plasma CVD apparatus of the present invention, the thermosetting polyimide or the thermosetting polybenzimidazole is formed on the corner of the inner wall surface of the reaction vessel formed of the non-insulating member. Since an insulating film is formed, the insulating member extends to the part that is more complicated than when using an alumina plate to prevent abnormal discharge that occurred locally during the reaction as before. Therefore, abnormal discharge can be reliably prevented. Moreover, this thermosetting resin is excellent in heat resistance, mechanical strength, chemical resistance, and the like, and can be formed thicker because cracks are less likely to occur as compared with conventional inorganic insulating layers. It has excellent durability even when exposed to plasma for a long time at a high temperature, and is suitable as an insulating material.
In addition, since both thermosetting resins are organic insulating materials, an effect of preventing contamination of a semiconductor product by a non-insulating member that is a base material of the reaction vessel can be expected.
Further, even if a part of the insulating film is broken by the plasma, there is an advantage that it can be repaired by a simple method such as applying a prepolymer to the portion and heating it again. In addition, effects due to characteristics of the resin such as excellent chemical resistance, excellent mechanical strength, and excellent heat resistance can be expected.

[Brief description of the drawings]

FIG. 1 is a front view showing a configuration of a CVD apparatus according to an embodiment.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 CVD apparatus 10 Reaction vessel 10a Coating (insulation layer) 11, 12 Electrode 13 Carry-in port 14 Carry-out port 15 Top plate 16 Etcher inlet 17 Air inlet 18 Bottom plate 19 Exhaust port 20, 30 Load lock chamber 21, 22 Shutter 31, 32 shutters

Claims (5)

[Claims] In a plasma CVD apparatus, an insulating film of thermosetting polyimide or thermosetting polybenzimidazole is formed at a corner of an inner wall surface of a reaction vessel formed of a non-insulating member. Characteristic plasma CVD
apparatus. 2. The thermosetting polyimide has a heat resistance of 3
2. The plasma CVD apparatus according to claim 1, wherein the apparatus is a wholly aromatic polyimide having a temperature of 00 ° C. or higher. 3. The thermosetting polyimide comprises pyromellitic dianhydride, 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride and 3,3 ′, 4,4′-benzophenone tetracarboxylic acid An organic acid dianhydride selected from the group consisting of acid dianhydrides, P-phenylenediamine,
The plasma CVD apparatus according to claim 2, wherein the apparatus is a polycondensate with an organic diamine selected from the group consisting of 4'-diaminodiphenyl and 4,4'-diaminodiphenyl ether. 4. The plasma CVD apparatus according to claim 1, wherein the thermosetting polybenzimidazole is [poly (2,2′-metaphenylene-5,5′-bibenzimidazole)]. 5. The reaction vessel has a columnar appearance surrounded by a side plate, a top plate and a bottom plate, and has a carry-in entrance and a carry-out exit for an object to be processed.
A container provided with an etcher (reaction gas) inlet, an air inlet, and an exhaust outlet, wherein the corners in the reaction container are edges of inlets and outlets of the object to be processed, an etcher inlet, The plasma CVD apparatus according to any one of claims 1 to 4, wherein the plasma CVD apparatus is an edge of an air inlet or an exhaust port.