CN104347358A - Method for improving plasma damage to device - Google Patents
Method for improving plasma damage to device Download PDFInfo
- Publication number
- CN104347358A CN104347358A CN201410469245.9A CN201410469245A CN104347358A CN 104347358 A CN104347358 A CN 104347358A CN 201410469245 A CN201410469245 A CN 201410469245A CN 104347358 A CN104347358 A CN 104347358A
- Authority
- CN
- China
- Prior art keywords
- wafer
- thimble
- etching machine
- etching
- machine bench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 40
- 230000009471 action Effects 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 230000035515 penetration Effects 0.000 abstract 1
- 238000001179 sorption measurement Methods 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 241000252254 Catostomidae Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a method for improving plasma damage to a device. The method comprises the following steps: providing a wafer and putting the wafer on an etching machine platform; adjusting a thimble of the etching machine platform so that the distance between the thimble and the wafer is less than 0.2cm; starting the etching machine platform to carry out etching movement on the wafer. According to the method, the distance between the thimble and the wafer is reduced, so that breakdown voltage of gas is increased and the penetration discharge between the wafer and the thimble is avoided; current of an electrostatic adsorption disc is tested to be normal and has no sine wave changes, so that the plasma damage to the wafer is avoided and the yield of the wafer is improved.
Description
Technical field
The present invention relates to IC manufacturing field, particularly a kind of method improving device plasma bulk damage.
Background technology
In the top layer copper passivating film etching technics of semiconductor device, adopt the etching machine bench of metal material, in technical process, the whole Electrostatic Absorption dish of etching machine bench is by formation one equivalent electric circuit as shown in Figure 1.Wherein, the sucker for placing wafer 10 is equivalent to resistance R1 and resistance R2, and electrode 40 connects high-pressure modular, thimble 20 arrives bottom wafer 10 through resistance R1, electrode 40 and resistance R2.Particularly, because the etching power of top layer wafer 10 passivating film is higher, make easily to form a comparatively highfield between wafer 10 and thimble 20, when electric field strength is too high, the gas be present between thimble 20 and wafer 10 will occur ionize and produce punch-through effect, and the gas ions (this gas ions is not the plasma 30 normally etching wafer 10) of formation can cause certain damage to wafer 10.Research shows, when there is punch-through effect, the electric current in the Electrostatic Absorption dish of etching machine bench will present sinusoidal wave change, and when there is not interpolar punch-through effect, the electric current in Electrostatic Absorption dish is more steady.
Therefore, how to avoid the plasma damage on its surface when wafer etches, become the technical problem that those skilled in the art are urgently to be resolved hurrily.
Summary of the invention
The invention provides a kind of method improving device plasma bulk damage, when avoiding top device to etch, plasma damage occurs.
For solving the problems of the technologies described above, the invention provides a kind of method improving device plasma bulk damage, comprising: wafer is provided, and wafer is placed on etching machine bench; The thimble of adjustment etching machine bench, makes the spacing of described thimble and wafer be less than 0.2cm; Start etching machine bench and etching action is carried out to described wafer.
As preferably, the length of described thimble is 4.11 ~ 4.19cm.
As preferably, the spacing of described thimble top and described wafer is: 0.07 ~ 0.15cm.
As preferably, when etching described wafer, the chamber pressure in etching machine bench is 0.3 ~ 0.5Torr.
Compared with prior art, the present invention has the following advantages: the present invention is by reducing the distance between wafer and thimble, the puncture voltage of gas is increased, avoid the penetrability electric discharge between wafer and thimble, normal by test Electrostatic Absorption dish electric current, without sinusoidal wave change, thus avoid the plasma damage of wafer, improve the yield of wafer.
Accompanying drawing explanation
Fig. 1 is the equivalent electric circuit of the Electrostatic Absorption dish etching wafer of etching machine bench;
Fig. 2 is the Paschen curve of air;
Fig. 3 is the structural representation of the Electrostatic Absorption dish etching wafer of etching machine bench in the embodiment of the invention.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.It should be noted that, accompanying drawing of the present invention all adopts the form of simplification and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
The method improving device plasma bulk damage of the present invention, comprising: provide wafer 1, and is placed on etching machine bench by wafer 1; The thimble 2 of adjustment etching machine bench, makes described thimble 2 be less than 0.2cm with the spacing of wafer 1; Start etching machine bench and etching action is carried out to described wafer 1.Particularly, as shown in Figure 3, in etching machine bench, wafer 1 is placed on sucker 3, and electrode 4 is arranged between two suckers 3, and supports by aluminium base 5, and thimble 2 is through the bottom arriving wafer 1 after aluminium base 5, electrode 4 and sucker 3.Wherein, connect radio frequency unit bottom thimble 2, electrode 4 connects high-pressure modular.And the distance d bottom thimble 2 top and wafer 1 is less than 0.2cm.Further, according to Paschen's law, the puncture voltage U of gas between thimble 2 and wafer 1
0and there is relation as shown in Figure 2 in pressure p and the distance d between thimble 2 and wafer 1, i.e. gas breakdown voltage U between thimble 2 and wafer 1
0and the functional relation of air pressure p and the distance d product between thimble 2 and wafer 1.As shown in Figure 2, when pd is when being less than about 1Torr.cm and being interval, gas breakdown voltage U
0obviously can increase along with the reduction of pd.Therefore, the present invention is by reducing the distance d between wafer 1 and thimble 2, the puncture voltage of gas is increased, the penetrability avoided between thimble 2 and wafer 1 is discharged, normal by the electric current testing the Electrostatic Absorption dish in known etching machine bench, without sinusoidal wave change, namely avoid the plasma damage of wafer 1, improve the yield of wafer 1.
As preferably, when etching described wafer 1, the chamber pressure in etching machine bench is 0.3 ~ 0.5Torr, and the length of described thimble 2 is 4.11 ~ 4.19cm, and the spacing of described thimble 2 top and described wafer 1 is: 0.07 ~ 0.15cm.Further, when chamber pressure is 0.4Torr, thimble 2 length is 4.16cm ± 0.02cm, thimble 2 is 0.1 ± 0.02cm with the spacing of wafer 1, now, the etching effect of wafer 1 is best, and the electric current of Electrostatic Absorption dish in etching machine bench is normal, without sinusoidal wave change.
In sum, the invention discloses a kind of method improving device plasma bulk damage, comprising: wafer 1 is provided, and wafer 1 is placed on etching machine bench; The thimble 2 of adjustment etching machine bench, makes described thimble 2 be less than 0.2cm with the spacing of wafer 1; Start etching machine bench and etching action is carried out to described wafer 1.The present invention is by reducing the distance between wafer 1 and thimble 2, and the puncture voltage of gas is increased, and the penetrability avoided between wafer 1 and thimble 2 is discharged, normal by test Electrostatic Absorption dish electric current, without sinusoidal wave change, thus avoid the plasma damage of wafer 1, improve the yield of wafer 1.
Obviously, those skilled in the art can carry out various change and modification to invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (4)
1. improve a method for device plasma bulk damage, it is characterized in that, comprising: wafer is provided, and wafer is placed on etching machine bench; The thimble of adjustment etching machine bench, makes the spacing of described thimble and wafer be less than 0.2cm; Start etching machine bench and etching action is carried out to described wafer.
2. improve the method for device plasma bulk damage as claimed in claim 1, it is characterized in that, the length of described thimble is 4.11 ~ 4.19cm.
3. improve the method for device plasma bulk damage as claimed in claim 1, it is characterized in that, the spacing of described thimble top and described wafer is: 0.07 ~ 0.15cm.
4. improve the method for device plasma bulk damage as claimed in claim 1, it is characterized in that, when etching described wafer, the chamber pressure in etching machine bench is 0.3 ~ 0.5Torr.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410469245.9A CN104347358A (en) | 2014-09-15 | 2014-09-15 | Method for improving plasma damage to device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410469245.9A CN104347358A (en) | 2014-09-15 | 2014-09-15 | Method for improving plasma damage to device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104347358A true CN104347358A (en) | 2015-02-11 |
Family
ID=52502741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410469245.9A Pending CN104347358A (en) | 2014-09-15 | 2014-09-15 | Method for improving plasma damage to device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104347358A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108463872A (en) * | 2016-01-14 | 2018-08-28 | 瓦里安半导体设备公司 | The method for implantation of semiconductor wafer with high bulk resistivity |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1407613A (en) * | 2001-09-05 | 2003-04-02 | 周星工程有限公司 | Electrostatic chuck for preventing from arc |
| CN1691288A (en) * | 2004-04-28 | 2005-11-02 | 东京毅力科创株式会社 | Substrate cleaning apparatus and method |
| CN1848405A (en) * | 2005-12-09 | 2006-10-18 | 北京圆合电子技术有限责任公司 | Wafer lifting device and lifting method |
| CN101692433A (en) * | 2009-10-15 | 2010-04-07 | 友达光电股份有限公司 | Plasma etching machine and ejector pin thereof |
| US20130128397A1 (en) * | 2011-11-21 | 2013-05-23 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency rf range |
| US20140202635A1 (en) * | 2013-01-22 | 2014-07-24 | Tokyo Electron Limited | Mounting table and plasma processing apparatus |
-
2014
- 2014-09-15 CN CN201410469245.9A patent/CN104347358A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1407613A (en) * | 2001-09-05 | 2003-04-02 | 周星工程有限公司 | Electrostatic chuck for preventing from arc |
| CN1691288A (en) * | 2004-04-28 | 2005-11-02 | 东京毅力科创株式会社 | Substrate cleaning apparatus and method |
| CN1848405A (en) * | 2005-12-09 | 2006-10-18 | 北京圆合电子技术有限责任公司 | Wafer lifting device and lifting method |
| CN101692433A (en) * | 2009-10-15 | 2010-04-07 | 友达光电股份有限公司 | Plasma etching machine and ejector pin thereof |
| US20130128397A1 (en) * | 2011-11-21 | 2013-05-23 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency rf range |
| US20140202635A1 (en) * | 2013-01-22 | 2014-07-24 | Tokyo Electron Limited | Mounting table and plasma processing apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108463872A (en) * | 2016-01-14 | 2018-08-28 | 瓦里安半导体设备公司 | The method for implantation of semiconductor wafer with high bulk resistivity |
| CN108463872B (en) * | 2016-01-14 | 2022-10-14 | 瓦里安半导体设备公司 | Ion implanter, semiconductor wafer implanting apparatus and method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100530536C (en) | System for decharging a wafer, electrostatic adsorbing device and integrated circuit manufacture method | |
| CN102208322B (en) | Plasma processing apparatus and semiconductor device manufacturing method | |
| EP2490245A3 (en) | Upper electrode and plasma processing apparatus | |
| WO2010091205A3 (en) | Ground return for plasma processes | |
| EP2312612A3 (en) | Plasma reactor for abating hazardous materials and driving method thereof | |
| EP3018719A3 (en) | Solar cell and method for manufacturing the same | |
| ATE550784T1 (en) | EFFICIENT METHOD FOR EXPOSING AND CONTACTING WAFER VIAS | |
| EP2654090A3 (en) | Solar cell method for manufacturing the same | |
| CN105898977A (en) | Plasma Producing Apparatus | |
| WO2012177762A3 (en) | Arrays of metal and metal oxide microplasma devices with defect free oxide | |
| WO2009134588A3 (en) | Nonplanar faceplate for a plasma processing chamber | |
| WO2012134199A3 (en) | Plasma-generating apparatus and substrate-treating apparatus | |
| WO2011014328A3 (en) | Light-up prevention in electrostatic chucks | |
| WO2009102589A3 (en) | High efficiency electro-static chucks for semiconductor wafer processing | |
| WO2008090763A1 (en) | Semiconductor device manufacturing method and semiconductor manufacturing apparatus | |
| TW200802596A (en) | Plasma processing method and plasma processing apparatus | |
| CN103779252B (en) | A kind of online detection architecture for wafer level bonding particle contamination | |
| CN108426532A (en) | Ceramic substrate thickness detection apparatus | |
| JP2016531833A (en) | Controlled crack propagation method for material cleaving using electromagnetic force | |
| CN104347358A (en) | Method for improving plasma damage to device | |
| CN103050429A (en) | Electrostatic sucker and manufacturing method thereof | |
| CN104465476A (en) | Electrostatic chuck | |
| CN106609355B (en) | Reaction chamber and semiconductor processing equipment | |
| CN107393856B (en) | Lower electrode device, semiconductor processing equipment and residual charge releasing method | |
| WO2012159710A3 (en) | Methods for the surface treatment of metal, metalloid and semiconductor solids |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150211 |