JP4355046B2 - Cleaning method and substrate processing apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate processing apparatus used in the manufacture of semiconductor devices such as LSI, and more particularly to a technique for processing a substrate while adsorbing it to an electrostatic adsorption stage.
[0002]
[Prior art]
A semiconductor device such as an LSI is manufactured through many surface treatments on a substrate. An apparatus that performs such a process often includes an electrostatic adsorption stage in order to hold the substrate in a predetermined position during the process.
FIG. 4 is a schematic front view showing a conventional substrate processing apparatus having such an electrostatic adsorption stage. FIG. 4 shows a schematic configuration of a sputtering apparatus as an example.
[0003]
The apparatus shown in FIG. 4 is provided with a processing chamber 1 having an exhaust system 11, a gas introduction system 2 for introducing a predetermined gas into the processing chamber 1, and a surface to be sputtered exposed in the processing chamber 1. A target 9, a sputtering power source 4 for sputtering the target 3 by applying a voltage to the target 3, and a substrate 9 at a position in the processing chamber 1 where a material (hereinafter, sputtered particles) released from the target 3 by sputtering reaches. And an electrostatic adsorption stage 5 for placement.
[0004]
When a voltage is applied to the target 3 by the sputtering power source 4 while introducing a predetermined gas by the gas introduction system 2, sputtering discharge occurs and the target 3 is sputtered. Sputtered particles emitted from the target 3 by sputtering reach the surface of the substrate 9 and a thin film made of the material of the target 3 is created.
The electrostatic adsorption stage 5 includes a dielectric block 51 made of a dielectric and a pair of adsorption electrodes 52 provided in the dielectric block 51. An adsorption power source 53 that applies a DC voltage to the adsorption electrode 52 is provided. When a DC voltage is applied to the adsorption electrode 52, the dielectric block 51 is dielectrically polarized and static electricity is induced on the surface. The substrate 9 is electrostatically attracted by the static electricity.
[0005]
[Problems to be solved by the invention]
In the conventional substrate processing apparatus described above, the surface of the electrostatic chucking stage is not a completely flat surface but has irregularities. Since the substrate is pressed against the electrostatic adsorption stage by static electricity, there is a problem that the back surface of the substrate is damaged by the irregularities on the surface of the electrostatic adsorption stage. When the back surface of the substrate is damaged, the peeled substrate material becomes particles. Particles are a general term for fine particles floating in a processing chamber. However, when the particles reach the surface of the substrate, there is a possibility of causing a serious defect such as short-circuiting a circuit formed on the surface.
Japanese Patent Laid-Open No. 7-245336 discloses an invention for solving the problem caused by the unevenness of the surface of the electrostatic adsorption stage. In the invention of this publication, the surface of the electrostatic adsorption stage is irradiated with plasma, and the unevenness is rounded to suppress generation of particles.
[0006]
However, according to the method of the present invention, since the surface of the electrostatic adsorption stage is sputtered, the fine particles of the material of the electrostatic adsorption stage are discharged into the processing chamber and become particles. Then, when such particles of the material of the electrostatic chucking stage adhere to the substrate, there is a possibility that defects such as circuit disconnection may occur.
The invention of the present application has been made to solve such a problem, and an object thereof is to effectively solve the problem of generation of particles caused by the contact between the electrostatic adsorption stage and the substrate.
[0007]
[Means for Solving the Problems]
  In order to solve the above problems, the invention according to claim 1 of the present application isIn a state where the substrate is not disposed on the electrostatic adsorption stage, a gas is introduced into the processing chamber, a high frequency power source is operated, a high frequency voltage is applied to the electrostatic adsorption stage in the processing chamber, and plasma is formed with the gas. A first step of cleaning the electrostatic adsorption stage with ions from the plasma;
After the first step, a second step of generating a sputter discharge by applying a voltage to the target while covering the electrostatic adsorption stage with a jig without placing a substrate on the electrostatic adsorption stage.It has the structure of.
  In order to solve the above problem, the invention according to claim 2 is the configuration of claim 1,In the second step, particles adhering to the target in the first step are removed by the sputter discharge.It has the structure of.
  Moreover, in order to solve the said subject, a claim3The invention described is the above claim.1 or 2In the configuration ofIn the first cleaning step, the self-bias voltage of the electrostatic adsorption stage is adjusted to -200V to -500V..
  Moreover, in order to solve the said subject, a claim4The invention described is the above claim.3In the configuration ofThe self-bias voltage is adjusted by adjusting a capacitance provided between an electrode provided in an electrostatic chucking stage and the high-frequency power source..
  In order to solve the above problem, the invention described in claim 5A processing chamber;
An electrostatic adsorption stage provided in the processing chamber to hold the substrate;
A first adsorption electrode and a second adsorption electrode provided in the electrostatic adsorption stage;
When the first adsorption electrode is connected to the first adsorption power source, the first variable capacitor located on the line between the first adsorption power source and the first adsorption electrode,
When the second adsorption electrode is connected to the second adsorption power source, a second variable capacitor located on the line between the second adsorption power source and the second adsorption electrode;
WithIt has the structure of.
  Moreover, in order to solve the said subject, a claim6The invention described is6. The configuration according to claim 5, further comprising a filter circuit positioned on a line between the high frequency power source and the first second power source when a high frequency power source is connected to the electrostatic adsorption stage.It has the structure of.
  Moreover, in order to solve the said subject, a claim7The invention described is the above claim.5 or 6In this configuration, the surface of the electrostatic adsorption stage is mirror-finished so that the size of the unevenness is 0.03 μm or less.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below.
FIG. 1 is a schematic front view showing a substrate processing apparatus according to an embodiment of the present invention. FIG. 1 shows the configuration of a sputtering apparatus as an example of a substrate processing apparatus, similarly to the apparatus shown in FIG.
The apparatus shown in FIG. 1 is provided with a processing chamber 1 having an exhaust system 11, a gas introduction system 2 for introducing a predetermined gas into the processing chamber 1, and a surface to be sputtered exposed in the processing chamber 1. A target 3, a sputtering power source 4 for sputtering the target 3 by applying a voltage to the target 3, and a static electricity for placing the substrate 9 at a position in the processing chamber 1 where the sputtered particles emitted from the target 3 reach by sputtering. The electroadsorption stage 5 is provided.
[0009]
The exhaust system 11 is provided with a vacuum pump such as a cryopump and the inside of the processing chamber 1 is 10.^-8It is configured to be able to exhaust to a pressure of about Torr. The gas introduction system 2 is configured to introduce a gas such as argon having a high sputtering rate into the processing chamber 1 at a predetermined flow rate.
The target 3 is attached to the processing chamber 1 via an insulating material 31. The sputter power supply 4 is configured to apply a negative DC voltage or a high-frequency voltage to the target 3.
A magnet mechanism 6 is provided behind the target 3 (opposite to the surface to be sputtered). The magnet mechanism 6 includes a central magnet 61 and a ring-shaped peripheral magnet 62 that surrounds the central magnet 61. Electrons are confined in the magnetic field set by the magnet mechanism 6, and highly efficient sputtering can be performed.
[0010]
The electrostatic adsorption stage 5 includes a metal stage main body 50, a dielectric block 51 fixed to the stage main body 50, and a pair of adsorption electrodes 52 provided in the dielectric block 51. An adsorption power source 53 for applying a DC voltage to the adsorption electrode 52 is provided, and static electricity is induced on the surface of the dielectric block 51 to electrostatically adsorb the substrate 9.
A heater 54 is provided inside the metal stage main body 50. The heater 54 is of a resistance heating type that generates Joule heat when energized. A radiation heating system such as an infrared lamp can also be used as the heater 54.
The stage body 50 and the dielectric block 51 are bonded with good thermal contact, and the heat from the heater 54 is transmitted to the substrate 9 via the dielectric block 51. The heater 54 is controlled by a heater power source (not shown), and as a result, the substrate 9 is heated and maintained at a predetermined temperature.
[0011]
One of the major features of the substrate processing apparatus of this embodiment is that the surface of the electrostatic adsorption stage 5 is mirror-finished so as to have an unevenness of 0.03 μm or less. FIG. 2 is a cross-sectional view illustrating mirror processing of the electrostatic adsorption stage 5.
The surface of the electrostatic adsorption stage 5 on which the substrate 9 is placed is the surface of the dielectric block 51. The material of the dielectric block 51 is AlN in this embodiment. The dielectric block 51 is first formed into a predetermined shape by a method such as cutting or injection molding. Then, the surface on which the substrate 9 is placed is mirror-finished. The mirror finish is performed by mechanical polishing or polishing. Thereby, as shown in FIG. 2, the unevenness | corrugation of the surface will be 0.03 micrometer or less.
[0012]
Thus, in this embodiment, since the surface of the electrostatic adsorption stage 5 is mirror-finished with unevenness of 0.03 μm or less, the problem that the back surface of the substrate 9 is damaged by the unevenness is solved. Therefore, unlike the invention of the above-mentioned publication, it is not necessary to cut the unevenness by plasma irradiation to make it round. In order to accurately control the temperature of the substrate 9 by the heater 54 described above, it is necessary to induce static electricity to some extent on the surface of the electrostatic adsorption stage 5 to adsorb the substrate 9, but the electrostatic adsorption force is induced. Even in this case, it is confirmed that there is no problem that the back surface of the substrate 9 is damaged if the unevenness is 0.03 μm or less.
[0013]
However, although not mentioned in the specification of the above-mentioned publication, scratches on the back surface of the substrate 9 are not caused only by the unevenness on the surface of the electrostatic adsorption stage 5. Dust generated at the time of forming the dielectric block 51 or assembling the electrostatic adsorption stage 5 remains on the surface of the electrostatic adsorption stage 5, or floating particles in the processing chamber 1 or particles entering from other chambers are generated. If it adheres to the surface of the electrostatic adsorption stage 5, the back surface of the substrate 9 may be damaged by contact with the dust and particles (hereinafter, dust during processing is also included in the particles).
[0014]
The generation of scratches due to the adhesion of particles to the electrostatic adsorption stage 5 cannot be solved by simply mirror-finishing the surface of the electrostatic adsorption stage 5. For this reason, in this embodiment, the structure which blows off the particle | grains on the surface of the electrostatic adsorption stage 5 with plasma is employ | adopted. That is, the apparatus of this embodiment has a plasma forming means 7 that blows off particles on the surface of the electrostatic adsorption stage 5 by plasma.
The plasma forming means 7 forms a plasma by applying a high frequency voltage to the electrostatic adsorption stage 5. Specifically, the plasma forming means 7 is constituted by a high-frequency power source 71 connected to the electrostatic chucking stage 5 via a matching circuit 72. The high frequency power supply 71 applies a high frequency voltage to the adsorption electrode 52 in a manner superimposed on the DC voltage of the adsorption power supply 53. That is, the transmission line from the high frequency power supply 71 is connected to a line connecting the suction power supply 53 and the electrostatic suction stage 5.
[0015]
When a high frequency voltage is applied to the suction electrode 52, a high frequency electric field is set in a space facing the electrostatic suction stage 5. The set high-frequency electric field gives energy to the gas introduced by the gas introduction system 2 and turns the gas into plasma.
A filter circuit 55 is provided on the line closer to the suction power supply 53 than the connection point of the transmission line from the high frequency power supply 71. The filter circuit 55 is provided to prevent the suction power source 53 from being damaged by the high frequency going around the suction power source 53.
[0016]
The major feature of the apparatus of the present embodiment is that the plasma forming means 7 does not cut the surface of the electrostatic adsorption stage 5 as in the above-mentioned publication, but repels particles adhering to the surface of the electrostatic adsorption stage 5. This is the point at which plasma is formed. This configuration is achieved by adjusting the magnitude of the self-bias voltage applied to the electrostatic adsorption stage 5 by the interaction between plasma and high frequency.
When a plasma is formed by applying a high frequency voltage to the electrostatic adsorption stage 5, if an appropriate capacitance exists between the electrostatic adsorption stage 5 and the high frequency power source 71, the electrostatic adsorption is caused by the interaction between the high frequency and the plasma. A self-bias voltage is applied to the stage 5. FIG. 3 is an explanatory diagram of the self-bias voltage.
[0017]
In FIG. 3, the change of the high-frequency electric field set by the high-frequency power source 71 is indicated by a dotted line. Due to this high frequency electric field, charged particles (electrons and positive ions) in the plasma are periodically attracted to the electrostatic adsorption stage 5. At this time, electrons with high mobility are attracted to the electrostatic adsorption stage 5 quickly, whereas positive ions with low mobility are attracted slowly. Due to this difference in mobility, the potential of the surface of the electrostatic adsorption stage 5 changes as shown by the solid line in FIG. This change in potential is such that a negative DC voltage is superimposed on the high-frequency electric field. This negative DC component voltage is called a self-bias voltage Vb.
This negative self-bias voltage has the effect of extracting positive ions in the plasma and reaching the electrostatic adsorption stage 5. Then, by adjusting the magnitude of the self-bias voltage, it is possible for positive ions to blow off particles present on the surface of the electrostatic adsorption stage 5 without scraping the surface of the electrostatic adsorption stage 5. .
[0018]
The magnitude of the self-bias voltage is affected by the magnitude and period of the high-frequency voltage provided by the high-frequency power supply 71, but a major factor is the capacitance existing between the high-frequency power supply 71 and the electrostatic adsorption stage 5. This capacitance includes the capacitors in the matching circuit 72 and the filter circuit 55. In this embodiment, a variable capacitor 73 is provided, and the magnitude of the self-bias voltage is adjusted by adjusting this.
[0019]
Depending on the material of the electrostatic chucking stage 5, the magnitude of the self-bias voltage can be used to blow off only the particles without scraping the surface of the electrostatic chucking stage 5. As described above, when the surface of the electrostatic adsorption stage 5 is alumina, the magnitude of the self-bias voltage is preferably about −200V to −500V. If it is smaller than −200 V, the acceleration energy of positive ions enough to blow off particles cannot be obtained. On the other hand, when the voltage is larger than −500 V, the surface of the electrostatic adsorption stage 5 may be etched away. This is a case where the substrate holding surface of the electrostatic adsorption stage 5 has a diameter of 8 inches and the frequency of the high frequency power supply 71 is 400 kHz.
[0020]
As described above, the self-bias voltage uses the property that electrons with high mobility tend to collect on the surface of the electrostatic adsorption stage 5, but when the self-bias voltage is generated, the plasma potential shifts in the positive direction. There is a nature. This is because the number of positive ions in the plasma is relatively large as a result of electrons in the plasma gathering on the electrostatic adsorption stage 5. However, when the plasma potential is shifted in the positive direction, the electrons are reversely drawn back to the plasma, so that the collection of electrons to the electrostatic adsorption stage 5 and the pull-back balance are balanced in the positive direction of the plasma potential. Shifts to equilibrium.
The shift of the plasma potential in the positive direction gives an accelerating electric field of positive ions superimposed on the self-bias voltage. Therefore, in order to blow off only the particles without etching the electrostatic adsorption stage 5, this positive direction is used. It is also necessary to adjust the size of the shift to.
[0021]
Next, returning to FIG. 1, other members in the processing chamber 1 will be described.
As shown in FIG. 1, a deposition shield 8 is provided inside the inner surface of the processing chamber 1. The deposition shield 8 prevents particles on the surface of the electrostatic adsorption stage 5 ejected by the plasma described above from adhering to the inner surface of the processing chamber 1. Without the deposition shield 8, the particles adhere to the inner surface of the processing chamber 1. Then, it may be peeled off by its own weight or the like, and floats in the processing chamber 1 again and adheres to the substrate 9. The deposition shield 8 prevents this problem.
[0022]
The deposition shield 8 also prevents sputtered particles flying during sputtering film formation on the substrate 9 from reaching the inner surface of the processing chamber 1. When such sputtered particles adhere, the sputtered particles grow into a thin film. When the film thickness reaches a certain level, it peels off due to internal stress or the like and becomes the source of particles.
[0023]
The deposition shield 8 is a cylindrical member having a shape surrounding the space between the electrostatic adsorption stage 5 and the target 3. The inner surface of the deposition shield 8 is subjected to a surface treatment that does not easily peel off even if particles adhere or a thin film is deposited. The deposition shield 8 is provided in the processing chamber 1 in a detachable state. The processing chamber 1 can be divided by a structure (not shown), and the replacement of the deposition shield 8 is performed by dividing the processing chamber 1.
[0024]
Next, the operation of the substrate processing apparatus according to this embodiment will be described.
First, the substrate 9 is carried into the processing chamber 1 through a gate valve (not shown) and placed on the electrostatic adsorption stage 5. At this time, the heater 54 in the electrostatic adsorption stage 5 is operating, and the heat of the heater 54 is transmitted to the substrate 9. Then, the suction power source 53 operates to apply a DC voltage to the pair of suction electrodes 52 to cause the dielectric block 51 to undergo dielectric polarization. As a result, the substrate 9 is electrostatically attracted to the electrostatic adsorption stage 5.
[0025]
In a state where the processing chamber 1 is evacuated to a predetermined pressure, the gate valve is closed and the gas introduction system 2 is operated. The sputtering power source 4 is operated while adjusting the amount of gas introduced into the processing chamber 1. As a result, the target 3 is sputtered, the sputtered particles reach the substrate 9, and a desired thin film is formed on the surface of the substrate 9.
After the sputtering is continued for a predetermined time to form a thin film with a predetermined thickness, the operation of the sputtering power source 4 and the gas introduction system 2 is stopped to stop the sputtering. Then, the operation of the suction power source 53 is stopped and the electrostatic suction is released. And after exhausting the inside of the processing chamber 1 again by the exhaust system 11, the gate valve is opened and the substrate 9 is taken out. By repeating such an operation, the substrates 9 are successively carried into the processing chamber 1 to perform the film forming process.
[0026]
In the above operation, the following particle removal operation is performed as necessary.
First, without carrying the substrate 9 into the processing chamber 1, the inside of the processing chamber 1 is evacuated to a predetermined pressure, and then the gas introduction system 2 is operated to introduce a gas such as argon. Then, the plasma forming means 7 is operated. That is, the high frequency power supply 71 is operated to apply a high frequency voltage to the electrostatic adsorption stage 5 to form plasma. The capacitance between the high-frequency power source 71 and the plasma is adjusted by the variable capacitor 73 to give a predetermined self-bias voltage to the electrostatic adsorption stage 5. As a result, positive ions in the plasma strike the electrostatic adsorption stage 5 and blow off particles on the surface. However, the surface of the electrostatic adsorption stage 5 does not reach the extent of being sputter etched.
[0027]
With such a configuration, particles on the surface of the electrostatic adsorption stage 5 are removed, and a clean surface is obtained. However, some of the blown particles reach the deposition shield 8, but some particles adhere to the target 3. If the target 3 with the particles attached is sputtered, the particles may be ejected from the target 3 and attached to the substrate 9. Therefore, the removal of particles from the target 3 is performed by the following operation.
[0028]
First, the surface of the electrostatic adsorption stage 5 is covered with a predetermined jig 90. The jig 90 is for preventing particles ejected from the target 3 from adhering to the surface of the electrostatic adsorption stage 5 again. As the jig 90, for example, the same material and the same shape as the substrate 9 to be processed can be adopted. And the required area | region of the electrostatic attraction stage 5 can be covered by mounting in the electrostatic attraction stage 5 by the same operation | movement as the carrying-in operation of the normal board | substrate 9. FIG. As long as the conveyance system allows, it is preferable to use a jig 90 that is as large as possible because it covers a large area on the surface of the electrostatic adsorption stage 5.
[0029]
After covering the surface of the electrostatic adsorption stage 5 with the jig 90 in this way, the gas introduction system 2 is operated. The processing chamber 1 is evacuated to a predetermined pressure in advance, and the amount of gas to be introduced is adjusted to further maintain the processing chamber 1 at a predetermined pressure. In this state, the sputtering power source 4 is operated to sputter the target 3. As a result, the particles adhering to the target 3 are ejected. Note that the sputtering in this case only needs to blow out particles on the surface of the electrostatic adsorption stage 5, and therefore, the sputtering is performed with a power smaller than that in the normal sputtering.
[0030]
The particles ejected by the sputtering adhere to the deposition shield 8 or adhere to the jig 90 that covers the electrostatic adsorption stage 5. The deposition shield 8 is replaced after holding the particles for a predetermined period. Further, the jig 90 is taken out of the processing chamber 1 after this operation. Therefore, the particles originally present on the surface of the electrostatic adsorption stage 5 are not attached to the substrate 9.
[0031]
The above-described particle removal operation is performed every time the substrate 9 is processed, when the device is shipped, when the daily operation of the device is started, when a predetermined number of substrates 9 have been processed. For example, when the apparatus is shipped, the above operation is used to remove particles generated during processing of the members constituting the electrostatic adsorption stage 5 or when the electrostatic adsorption stage 5 is assembled. In addition, after the maintenance is performed after opening the processing chamber 1 to the atmosphere, the above operation is performed to remove particles brought into the processing chamber 1 due to the opening to the atmosphere when the apparatus is newly started. Further, when it is necessary to periodically remove particles generated by the conveyance of the substrate 9, the above operation is performed every time or every predetermined number of times.
[0032]
In any case, since the surface of the electrostatic adsorption stage 5 is mirror-finished and the generation of particles due to scratches on the back surface of the substrate 9 is suppressed, the particles adhering to the surface are blown off by the plasma. Compared with the particle reduction effect. And since the surface of the electrostatic adsorption stage 5 is not shaved like the above-mentioned gazette, there is no generation | occurrence | production of the particle by this.
[0033]
Furthermore, even if particles are blown off from the electrostatic adsorption stage 5 and adhere to the target 3, they are removed by sputtering, so that the film quality formed on the substrate 9 is not contaminated. At this time, since the jig 90 covers the surface of the electrostatic adsorption stage 5, the particles do not return to the electrostatic adsorption stage 5. The particles are discharged by the exhaust system 11 or attached to the deposition shield 8 and taken out to the atmosphere side with the replacement of the deposition shield 8. For this reason, it does not adhere to the substrate 9.
[0034]
In the above description, the sputtering apparatus is taken as an example of the substrate processing apparatus. However, except for the case of claim 5, the concept of the present invention is also applied to other substrate processing apparatuses such as a chemical vapor deposition apparatus and an etching apparatus. Applicable.
In some cases, a plurality of pairs of attracting electrodes are used as the electrostatic attracting method. In some cases, electrostatic adsorption may be performed using the self-bias voltage described above. In this case, a high frequency voltage is applied to one or a plurality of adsorption electrodes, and the dielectric block is dielectrically polarized by a self-bias voltage.
In carrying out the invention of claim 5, a shutter mechanism capable of covering the surface of the electrostatic chucking stage 5 may be employed in addition to the configuration using the same substrate 9 as the jig 90.
[0035]
【The invention's effect】
  As explained above,Claim 1 of this applicationAccording to this invention, even if particles bounced off from the electrostatic adsorption stage adhere to the target, the thin film formed on the substrate is not soiled by this.
  Moreover, according to the invention of claim 3, in addition to the above effect,Since the particles on the surface are blown off with such an energy that the surface of the electrostatic adsorption stage is not etched by the ions in the plasma, the particles can be effectively removed without creating new particles.
  According to the fifth aspect of the present invention, when cleaning the electrostatic adsorption stage with plasma, the self-bias voltage of the electrostatic adsorption stage can be adjusted by adjusting the variable capacitor.
  Claims7According to the described invention, in addition to the above effects, generation of particles due to scratches on the back surface of the substrate due to contact with the surface of the electrostatic adsorption stage is suppressed.
[Brief description of the drawings]
FIG. 1 is a schematic front view showing a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view illustrating mirror processing of an electrostatic adsorption stage.
FIG. 3 is an explanatory diagram of a self-bias voltage.
FIG. 4 is a schematic front view showing a conventional substrate processing apparatus including an electrostatic adsorption stage.
[Explanation of symbols]
1 Processing chamber
2 Gas introduction system
3 Target
4 Sputtering power supply
5 Electrostatic adsorption stage
50 Stage body
51 Dielectric block
52 Adsorption electrode
53 Power supply
54 Heater
55 Filter circuit
6 Magnet mechanism
7 Plasma forming means
71 high frequency power supply
72 Matching circuit
73 Variable capacitor
8 Protection shield
9 Board
90 Jig

Claims (7)

In a state where the substrate is not disposed on the electrostatic adsorption stage, a gas is introduced into the processing chamber, a high frequency power source is operated, a high frequency voltage is applied to the electrostatic adsorption stage in the processing chamber, and plasma is formed with the gas. A first step of cleaning the electrostatic adsorption stage with ions from the plasma;
  After the first step, a second step of generating a sputter discharge by applying a voltage to the target while covering the electrostatic adsorption stage with a jig without placing a substrate on the electrostatic adsorption stage.
A cleaning method comprising: The cleaning method according to claim 1, wherein in the second step, particles adhering to the target in the first step are removed by the sputter discharge. 3. The cleaning method according to claim 1, wherein in the first step, a self-bias voltage of the electrostatic adsorption stage is adjusted to -200V to -500V. 4. The cleaning method according to claim 3, wherein the self-bias voltage is adjusted by adjusting a capacitance provided between an electrode provided in an electrostatic adsorption stage and the high-frequency power source. A processing chamber;
  An electrostatic adsorption stage provided in the processing chamber to hold the substrate;
  A first adsorption electrode and a second adsorption electrode provided in the electrostatic adsorption stage;
  When the first adsorption electrode is connected to the first adsorption power source, the first variable capacitor located on the line between the first adsorption power source and the first adsorption electrode,
  When the second adsorption electrode is connected to the second adsorption power source, a second variable capacitor located on the line between the second adsorption power source and the second adsorption electrode;
A substrate processing apparatus comprising: 6. The apparatus according to claim 5, further comprising a filter circuit positioned on a line between the high frequency power source and the first second power source when a high frequency power source is connected to the electrostatic adsorption stage. Substrate processing equipment. The substrate processing apparatus according to claim 5, wherein the surface of the electrostatic adsorption stage is mirror-finished so that the size of the unevenness is 0.03 μm or less.

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