CN111630635A - Substrate processing method and substrate processing apparatus - Google Patents

Substrate processing method and substrate processing apparatus Download PDF

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Publication number
CN111630635A
CN111630635A CN201880087065.0A CN201880087065A CN111630635A CN 111630635 A CN111630635 A CN 111630635A CN 201880087065 A CN201880087065 A CN 201880087065A CN 111630635 A CN111630635 A CN 111630635A
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Prior art keywords
substrate
liquid
conductivity
low
liquid supply
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CN201880087065.0A
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Chinese (zh)
Inventor
东克荣
菅原雄二
竹松佑介
石川友也
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Abstract

A substrate processing method for processing a substrate by supplying a chemical solution to a surface of the substrate on which a pattern is formed, the substrate processing method comprising: a substrate holding step of holding a substrate; a chemical liquid supply step of supplying the chemical liquid to at least the surface of the substrate; a low-conductivity liquid supply step of supplying a low-conductivity liquid having a conductivity lower than that of the chemical liquid to the surface of the substrate in order to remove electricity from the substrate before the chemical liquid supply step; and a high-conductivity liquid supply step of supplying a high-conductivity liquid having a conductivity lower than the chemical solution and higher than the low-conductivity liquid to a back surface of the substrate on the opposite side of the front surface, without supplying the front surface of the substrate with electricity, before the low-conductivity liquid supply step, in order to remove electricity from the substrate.

Description

Substrate processing method and substrate processing apparatus
Technical Field
The present invention relates to a substrate processing method and a substrate processing apparatus for processing a substrate surface. Examples of the substrate to be processed include a semiconductor wafer, a substrate for a liquid crystal Display device, a substrate for a FPD (flat panel Display) such as an organic EL (electroluminescence) Display device, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for an optical disk, a substrate for a photomask, a ceramic substrate, and a substrate for a solar cell.
Background
In a manufacturing process of a semiconductor device, for example, a single-wafer substrate processing apparatus for processing substrates one by one includes: a processing chamber; a spin chuck for holding a substrate substantially horizontally in the processing chamber and rotating the substrate; and a nozzle for discharging the chemical solution to a surface of the substrate (a surface on which a pattern (device) is formed) rotated by the spin chuck.
In substrate processing using such a substrate processing apparatus, a chemical liquid is discharged from a nozzle toward, for example, a center portion of a surface of a substrate in a rotating state. The chemical solution supplied to the center of the substrate surface is subjected to a centrifugal force generated by the rotation of the substrate, flows toward the periphery on the substrate surface, and spreads over the entire substrate surface. Thereby, the treatment with the chemical solution is performed on the entire surface of the substrate.
The substrate carried into the processing chamber may accumulate charges (i.e., be charged) on the surface of the substrate in a preceding step (ion implantation or dry etching). When electric charges are accumulated on the surface of the substrate carried into the processing chamber, when the chemical solution from the nozzle deposits the liquid on the surface of the substrate, the surface of the substrate comes into contact with the chemical solution to cause a rapid change in electric charges on the surface of the substrate, and electrostatic discharge (arc discharge) may occur at or near the deposition position of the chemical solution. As a result, local defects may occur on the surface of the substrate, such as pattern (device) breakage or pattern perforation.
For this reason, patent document 1 below discloses: in order to prevent electrostatic discharge from occurring on the substrate surface at the start of chemical solution supply, a stripping solution (e.g., carbonated water) having a lower conductivity than the chemical solution is supplied to the substrate surface before the chemical solution supply is started.
Documents of the prior art
Patent document
Patent document 1: U.S. patent application publication No. 2009/211610 specification
Disclosure of Invention
Problems to be solved by the invention
However, the amount of charge on the substrate carried into the processing chamber may be large. In the neutralization using carbonated water, since electric charge moves rapidly, electrostatic discharge occurs when the carbonated water is applied to a substrate surface in contact with the carbonated water.
In order to gradually decrease the charge amount of the substrate, it is conceivable to supply a dechlorination liquid (for example, DIW (deionized water)) having a lower conductivity than the carbonated water to the substrate surface and supply the carbonated water to the substrate surface after the supply. However, when the amount of charge of the substrate is large, electrostatic discharge may occur even when DIW is supplied to the substrate surface.
That is, it is necessary to suppress or prevent the occurrence of electrostatic discharge associated with the supply of the chemical solution to the substrate and also to suppress or prevent the occurrence of electrostatic discharge associated with the supply of the electricity-removing liquid (carbonated water, DIW) to the substrate. In other words, it is necessary to suppress or prevent the occurrence of electrostatic discharge accompanying the supply of the liquid to the substrate.
Accordingly, an object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of suppressing or preventing generation of electrostatic discharge accompanying supply of a liquid to a substrate surface and thereby suppressing or preventing generation of a local defect on the substrate surface.
Means for solving the problems
The present invention provides a substrate processing method for processing a substrate by supplying a chemical solution to a surface of the substrate on which a pattern is formed, the substrate processing method including: a substrate holding step of holding a substrate; a chemical liquid supply step of supplying the chemical liquid to at least the surface of the substrate; a low-conductivity liquid supply step of supplying a low-conductivity liquid having a conductivity lower than that of the chemical liquid to the surface of the substrate in order to remove electricity from the substrate before the chemical liquid supply step; and a high-conductivity liquid supply step of supplying a high-conductivity liquid having a conductivity lower than the chemical solution and higher than the low-conductivity liquid to a back surface of the substrate on the opposite side of the front surface, without supplying the front surface of the substrate with electricity, before the low-conductivity liquid supply step, in order to remove electricity from the substrate.
According to this method, before the chemical liquid is supplied to the substrate, first, the highly conductive liquid is supplied to the back surface of the substrate without being supplied to the front surface of the substrate. When the substrate is charged, charges are accumulated on the substrate surface (device surface on which devices are formed), and therefore, even if a highly conductive liquid is supplied to the substrate back surface, electrostatic discharge hardly occurs on the substrate back surface. Further, since the high-conductivity liquid has a relatively high conductivity, the amount of electric charges accumulated in the substrate can be effectively reduced by supplying the low-conductivity liquid to the back surface of the substrate.
In addition, by supplying a highly conductive liquid to the back surface of the substrate, electric charges that have entered the inside of the pattern on the front surface of the substrate can be extracted to the outer surface of the pattern.
Then, a low-conductivity liquid is supplied to the surface of the substrate. Thus, the electric charges escaping to the outer surface of the pattern can be effectively removed by the low-conductivity liquid. Since the conductive liquid is supplied to the substrate surface after the amount of electric charges from the substrate is reduced, the occurrence of electrostatic discharge can be effectively suppressed or prevented. Further, since the conductive liquid is a low-conductivity liquid having a low conductivity, the occurrence of electrostatic discharge can be more effectively suppressed or prevented.
Then, a chemical solution is supplied to at least the surface of the substrate from which the electric charge has been sufficiently removed by the low-conductivity liquid and the high-conductivity liquid. Thereby performing the liquid medicine process. Therefore, the occurrence of electrostatic discharge accompanying the supply of the chemical solution to the substrate surface can be suppressed or prevented.
This can suppress or prevent the occurrence of electrostatic discharge associated with the supply of a liquid (low-conductivity liquid, high-conductivity liquid, chemical liquid) to the substrate surface, and thus can suppress or prevent the occurrence of local defects on the substrate surface.
In one embodiment of the present invention, the substrate processing method further includes: and supplying the low-conductivity liquid or the high-conductivity liquid to the back surface of the substrate to remove electricity from the substrate simultaneously with the low-conductivity liquid supplying step.
According to this method, the low-conductivity liquid is supplied to the front surface of the substrate, and the low-conductivity liquid or the high-conductivity liquid is supplied to the back surface of the substrate. This enables more effective removal of the charges accumulated on the substrate. Therefore, the occurrence of electrostatic discharge at the time of supplying the chemical liquid can be more effectively suppressed or prevented.
In another embodiment of the present invention, the highly conductive liquid supply step is not performed while the liquid is supplied to the surface of the substrate.
When the highly conductive liquid is supplied to the back surface of the substrate and the liquid is supplied to the front surface of the substrate, electrostatic discharge may occur on the front surface of the substrate due to the liquid sticking to the front surface of the substrate.
In contrast, according to this method, the highly conductive liquid is not supplied to the back surface of the substrate, and the liquid is not supplied to the front surface of the substrate. This can more effectively suppress or prevent electrostatic discharge from occurring on the substrate surface.
In one embodiment of the present invention, the substrate processing method further includes: and an approach position arrangement step of arranging an opposing member having a substrate opposing surface opposing the entire region of the surface of the substrate at an approach position where the substrate opposing surface and the surface of the substrate are brought close to each other, while performing the highly conductive liquid supply step.
According to this method, the highly conductive liquid is supplied to the back surface of the substrate while the substrate opposing surface of the opposing member is brought close to the front surface of the substrate, that is, while the front surface of the substrate is protected by the substrate opposing surface of the opposing member. Therefore, the highly conductive liquid can be favorably prevented or inhibited from entering from the back surface of the substrate to the front surface of the substrate, or from entering from the front surface of the substrate.
In yet another embodiment of the present invention, the substrate processing method further includes: and a second highly conductive liquid supply step of supplying the highly conductive liquid to at least the surface of the substrate after the low conductive liquid supply step and before the chemical liquid supply step, in order to remove electricity from the substrate.
According to this method, the highly conductive liquid is supplied to at least the surface of the substrate after the low conductive liquid is supplied to the substrate until the chemical liquid is supplied to the substrate. That is, the low-conductivity liquid → the high-conductivity liquid is supplied to the substrate surface in this order. Since the conductive liquid is supplied in the order of low conductive liquid → high conductive liquid → chemical liquid, that is, in the order of low conductivity, the conductive liquid is supplied stepwise, it is possible to remove electricity satisfactorily from the substrate while preventing electrostatic discharge from occurring due to the low conductive liquid and the high conductive liquid, and it is possible to effectively suppress electrostatic discharge from occurring during the supply of the chemical liquid.
In one embodiment of the present invention, the substrate holding step includes a step of holding the substrate by bringing a conductive portion formed of a conductive material into contact with a peripheral edge portion of the substrate.
According to this method, the substrate can be satisfactorily discharged through the low-conductivity liquid or the high-conductivity liquid.
In addition, the low-conductivity liquid may contain deionized water. The highly conductive liquid may contain a liquid containing ions.
The present invention provides a substrate processing apparatus, comprising: a substrate holding unit for holding a substrate having a pattern formed on a surface thereof; a chemical liquid supply unit for supplying a conductive chemical liquid to the surface of the substrate held by the substrate holding unit; a low-conductivity liquid supply unit configured to supply a low-conductivity liquid having a conductivity lower than that of the chemical liquid to the surface of the substrate held by the substrate holding unit; a highly conductive liquid supply unit configured to supply a highly conductive liquid having a conductivity lower than the chemical solution and higher than the low conductive liquid to a back surface of the substrate held by the substrate holding unit on the opposite side of the front surface; and a control device for controlling the chemical liquid supply unit, the low conductivity liquid supply unit, and the high conductivity liquid supply unit, wherein the control device executes the following steps: a chemical liquid supply step of supplying the chemical liquid to at least the surface of the substrate; a low-conductivity liquid supply step of supplying the low-conductivity liquid to the surface of the substrate for removing electricity from the substrate before the chemical liquid supply step; and a high-conductivity liquid supply step of supplying the high-conductivity liquid to the back surface of the substrate on the opposite side of the front surface, without supplying the high-conductivity liquid to the front surface of the substrate, before the low-conductivity liquid supply step.
According to this configuration, before the chemical liquid is supplied to the substrate, the highly conductive liquid is first supplied to the back surface of the substrate without being supplied to the front surface of the substrate. When the substrate is charged, charges are accumulated on the substrate surface (device surface on which devices are formed), and therefore, even if a highly conductive liquid is supplied to the substrate back surface, electrostatic discharge hardly occurs on the substrate back surface. Further, since the high-conductivity liquid has a relatively high conductivity, the amount of electric charges accumulated in the substrate can be effectively reduced by supplying the low-conductivity liquid to the back surface of the substrate.
In addition, by supplying a highly conductive liquid to the back surface of the substrate, electric charges that have entered the inside of the pattern on the front surface of the substrate can be extracted to the outer surface of the pattern.
Then, a low-conductivity liquid is supplied to the surface of the substrate. Thus, the electric charges escaping to the outer surface of the pattern can be effectively removed by the low-conductivity liquid. Since the conductive liquid is supplied to the substrate surface after the amount of electric charges from the substrate is reduced, the occurrence of electrostatic discharge can be effectively suppressed or prevented. Further, since the conductive liquid is a low-conductivity liquid having a low conductivity, the occurrence of electrostatic discharge can be more effectively suppressed or prevented.
Then, a chemical solution is supplied to at least the surface of the substrate from which the electric charge has been sufficiently removed by the low-conductivity liquid and the high-conductivity liquid. Thereby performing the liquid medicine process. Therefore, the occurrence of electrostatic discharge accompanying the supply of the chemical solution to the substrate surface can be suppressed or prevented.
This can suppress or prevent the occurrence of electrostatic discharge associated with the supply of a liquid (low-conductivity liquid, high-conductivity liquid, chemical liquid) to the substrate surface, and thus can suppress or prevent the occurrence of local defects on the substrate surface.
In one embodiment of the present invention, the substrate processing apparatus further includes: and an opposing member having a substrate opposing surface opposing the entire region of the surface of the substrate held by the substrate holding unit, and disposed at an approaching position where the substrate opposing surface and the surface of the substrate approach each other.
According to this configuration, the highly conductive liquid can be supplied to the back surface of the substrate while the substrate opposing surface of the opposing member is brought close to the front surface of the substrate, that is, while the front surface of the substrate is protected by the substrate opposing surface of the opposing member. In this case, the highly conductive liquid can be favorably prevented or prevented from entering from the back surface of the substrate to the front surface of the substrate, or from entering from the front surface of the substrate.
In one embodiment of the present invention, the substrate holding unit includes a conductive pin formed using a conductive material, and the conductive pin is a holding pin that supports a peripheral edge portion of the substrate in contact therewith.
According to this configuration, the substrate can be satisfactorily discharged through the low-conductivity liquid or the high-conductivity liquid.
The foregoing and other objects, features and advantages of the present invention will be apparent from the following description of the embodiments with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic plan view for explaining an internal layout of a substrate processing apparatus according to an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view for explaining an example of the configuration of a processing unit provided in the substrate processing apparatus.
Fig. 3 is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus and a cross-sectional view showing a surface of a substrate to be processed of the substrate processing apparatus in an enlarged manner.
Fig. 4 is a flowchart for explaining a1 st substrate processing example of the processing unit.
Fig. 5A to 5C are schematic views showing substrates when the respective steps of the first substrate processing example 1 are performed, as viewed horizontally.
Fig. 6A to 6C are diagrams for explaining changes in the charged state of the substrate in each step of the first substrate processing example 1.
Fig. 7A to 7C are views for explaining the contents of the chemical liquid supplying step included in the 1 st substrate processing example.
Fig. 8 is a graph showing test results of a neutralization test.
Fig. 9 is a flowchart for explaining a second example of substrate processing performed by the processing unit.
Fig. 10 is a flowchart for explaining a third example of substrate processing performed by the processing unit.
Detailed Description
Fig. 1 is a schematic view of a substrate processing apparatus 1 according to an embodiment of the present invention, as viewed from above. The substrate processing apparatus 1 is a single wafer type apparatus for processing substrates W such as silicon wafers one by one. In this embodiment, the substrate W is a disk-shaped substrate. The substrate processing apparatus 1 includes: a plurality of processing units 2 for processing the substrate W with the processing liquid and the rinse liquid; a Load Port (LP) for placing a substrate stocker for storing a plurality of substrates W processed by the processing unit 2; an indexer robot (indexer robot) IR and a substrate transfer robot CR for transferring the substrate W between the load port LP and the processing unit 2; and a control device 3 for controlling the substrate processing apparatus 1. The indexer robot IR transports the substrate W between the substrate stocker and the substrate transport robot CR. The substrate transfer robot CR transfers the substrate W between the indexer robot IR and the process unit 2. The plurality of processing units 2 have, for example, the same configuration.
Fig. 2 is a schematic cross-sectional view for explaining a configuration example of the processing unit 2.
The processing unit 2 includes: a box-shaped processing chamber 4; a spin chuck (substrate holding unit) 5 that holds one substrate W in a horizontal posture in the processing chamber 4 and rotates the substrate W about a vertical rotation axis a1 passing through the center of the substrate W; an upper liquid supply unit for supplying liquid (processing liquid (chemical liquid and rinse liquid) to an upper surface of the substrate W held by the spin chuck 5 (a surface (pattern forming surface) Wa (see fig. 5A, etc.)); a lower liquid supply unit for supplying liquid (processing liquid (chemical liquid and rinse liquid) to a lower surface of the substrate W held by the spin chuck 5 (a rear surface Wb of the substrate W (see fig. 5A, etc.)); a facing member 6 facing the upper surface of the substrate W held by the spin chuck 5 and shielding a space above the substrate W from an atmosphere surrounding the space; and a cylindrical processing cup (not shown) surrounding the side of the spin chuck 5.
The processing chamber 4 includes a box-shaped partition wall 7 that houses the spin chuck 5 and the like.
As the spin chuck 5, a chuck type chuck is used which holds the substrate W horizontally by clamping the substrate W in a horizontal direction. Specifically, the spin chuck 5 includes: a rotary motor (rotary unit) 12; a lower rotary shaft 13 integrated with a drive shaft of the rotary motor 12; a disk-shaped spin base 14 attached substantially horizontally to the upper end of the lower spin shaft 13. The lower rotary shaft 13 is formed using a conductive material. The lower rotation shaft 13 is grounded.
The spin base 14 includes a horizontal circular upper surface 14a having an outer diameter larger than that of the substrate W. The spin base 14 is formed using a conductive material. A plurality of (3 or more, for example, 6) clamp pins 15 are arranged on the peripheral edge portion of the upper surface 14 a. The plurality of chucking pins 15 are arranged at appropriate intervals, for example, at equal intervals, on a circumference corresponding to the outer peripheral shape of the substrate W in the peripheral edge portion of the upper surface of the spin base 14. The clamp pin 15 is a so-called conductive pin formed using a conductive material.
As described above, the lower rotary shaft 13, the rotary base 14, and the clamp pin 15 are each formed using a conductive material (e.g., a conductive material containing carbon, a metal material), and the lower rotary shaft 13 is grounded. Therefore, when a liquid having conductivity (a low-conductivity liquid, a high-conductivity liquid, and a chemical liquid described later) is supplied to the front surface or the back surface of the substrate W held by the spin chuck 5, the substrate W is electrically removed through the liquid.
The opposing member 6 includes: an opposite plate 17; and an upper surface nozzle 30 penetrating the center of the opposing plate 17 in the vertical direction. The opposing plate 17 has a circular substrate opposing surface 17a on a lower surface thereof, which is horizontally disposed so as to face the entire upper surface of the substrate W.
In this embodiment, the upper surface nozzle 30 functions as a center axis nozzle. The upper surface nozzle 30 is disposed above the spin chuck 5. The upper surface nozzle 30 is supported by the support arm 22. The upper surface nozzle 30 cannot rotate relative to the support arm 22. The upper surface nozzle 30 is lifted and lowered together with the opposing plate 17 and the support arm 22. The upper surface nozzle 30 has a discharge port 30a formed at a lower end thereof so as to face a central portion of an upper surface of the substrate W held by the spin chuck 5.
A facing member lifting unit 27 including an electric motor, a ball screw, and the like is coupled to the support arm 22. The opposing member lifting and lowering unit 27 vertically lifts and lowers the opposing member 6 (the opposing plate 17 and the upper rotating shaft 18) and the upper surface nozzle 30 together with the support arm 22.
The opposing member lifting and lowering unit 27 lifts and lowers the opposing plate 17 between an approaching position (a position indicated by a two-dot chain line in fig. 2, also refer to fig. 5A) where the substrate opposing surface 17a approaches the upper surface of the substrate W held by the spin chuck 5, and a retracted position (a position indicated by a solid line in fig. 2) where the opposing plate is retracted upward more largely than the approaching position. The opposing member elevating unit 27 can hold the opposing plate 17 at the approaching position (the position shown in fig. 5A), the upper position (the positions shown in fig. 5B and 5C), and the retracted position. The approach position is a position disposed with a slight interval (for example, about 0.3mm) between the substrate facing surface 17a and the upper surface of the substrate W. The upper position is a position where the distance between the substrate facing surface 17a and the upper surface of the substrate W is greater than the proximity position and smaller than the retreat position.
The upper side liquid supply unit includes: an upper surface nozzle 30; and a first upper supply unit 31, a second upper supply unit 32, and a third upper supply unit 33 that supply the processing liquid to the upper surface nozzle 30, respectively.
The first upper supply unit 31 includes: an upper common pipe 35 having one end connected to the upper surface nozzle 30; and an upper mixing valve unit UMV connected to the other end of the upper common pipe 35. The upmix valve unit UMV comprises: an upper connection part 36 for feeding liquid to the common piping 35; and a plurality of valves. A flow space for flowing a liquid is formed inside the upper connection portion 36. The upper mixing valve unit UMV further includes a DIW upper pipe 37, an SC2 upper pipe 38, and an upper suction pipe 39, which are connected to the upper connection portion 36, respectively. The plurality of valves included in the upmix valve unit UMV includes: a DIW upper valve 42 for opening and closing the DIW upper pipe 37; an SC2 upper valve 43 for opening and closing the SC2 upper pipe 38; and an upper suction valve 44 for opening and closing the upper suction pipe 39.
DIW (deionized water) is supplied from a DIW supply source to the DIW upper pipe 37. The DIW is supplied to the upper surface nozzle 30 by opening the DIW upper valve in a state where other valves included in the upper side liquid supply unit are closed, thereby discharging the DIW downward from the discharge port 30 a.
SC2 (containing HCl and H) from a SC2 supply source is supplied to the upper pipe 38 of SC22O2Mixed liquid of (1). SC2 is supplied to the upper surface nozzle 30 by opening the SC2 upper valve 43 in a state where the other valves included in the upper side liquid supply unit are closed, whereby SC2 is discharged downward from the discharge port 30 a.
A suction device (not shown) is connected to the downstream end of the upper suction pipe 39. The suction device is, for example, a jet type suction device. The ejector type suction device includes a vacuum generator and an Aspirator (Aspirator). In the operating state of the suction device, the inside of the suction device is depressurized to suck the inside of the upper suction pipe 39, and as a result, the operation of the suction device is activated. When the operation of the suction device is activated, the interior of the upper suction pipe 39 is sucked by opening the upper suction valve 44 with the other valves included in the upper liquid supply unit closed, and the liquid in the internal space (flow space) of the upper connection portion 36 and the liquid in the interior of the upper common pipe 35 are sucked by the suction device.
The second upper supply unit 32 includes: an SC1 upper pipe 46 connected to the upper surface nozzle 30; and an SC1 upper valve 47 inserted into the SC1 upper pipe 46. SC1 (containing NH) from a SC1 supply source is supplied to an SC1 upper pipe 464OH and H2O2Mixed liquid of (1). SC1 is supplied to the upper surface nozzle 30 by opening the SC1 upper valve 47 in a state where the other valves included in the upper side liquid supply unit are closed, whereby SC1 is discharged downward from the discharge port 30 a.
The third upper supply unit 33 includes: an HF upper pipe 48 connected to the upper surface nozzle 30; and an HF upper valve 49 inserted into the HF upper pipe 48. HF is supplied from an HF supply source to the HF upper pipe 48. HF is supplied to the upper surface nozzle 30 by opening the HF upper valve 49 in a state where other valves included in the upper side liquid supply unit are closed, whereby HF is discharged downward from the discharge port 30 a. In this embodiment, the HF is, for example, diluted dilute hydrofluoric acid (DHF).
In this embodiment, the upper surface nozzle 30, the DIW upper pipe 37, and the DIW upper valve 42 constitute a low conductivity liquid supply unit.
The lower liquid supply unit includes: a lower surface nozzle 50; and a first lower supply unit 51, a second lower supply unit 52, and a third lower supply unit 53 that supply the processing liquid to the lower surface nozzle 50, respectively.
The first lower supply unit 51 includes: a lower common pipe 55 having one end connected to the lower surface nozzle 50; and a lower mixing valve unit DMV connected to the other end of the lower common pipe 55. The lower mixing valve unit DMV includes: a lower connection portion 56 for feeding the liquid to the lower common pipe 55; and a plurality of valves. A flow space for flowing a liquid is formed inside the lower connection portion 56. The lower mixing valve unit DMV further includes a DIW lower pipe 57, an SC2 lower pipe 58, and CO, which are connected to the lower connection portion 56, respectively2An underwater pipe 60 and a lower suction pipe 59. The plurality of valves included in the lower liquid supply unit include: to DIA DIW lower valve 62 that opens and closes the W lower pipe 57; an SC2 lower valve 63 for opening and closing the SC2 lower pipe 58; to CO2CO for opening and closing underwater piping 602A subsea valve 65; and a lower suction valve 64 for opening and closing the lower suction pipe 59.
The DIW from the DIW supply source is supplied to the DIW lower pipe 57. The DIW is supplied to the lower surface nozzle 50 by opening the DIW lower valve 62 in a state of closing other valves included in the lower mixing valve unit DMV, thereby discharging the DIW upward from the discharge port 50 a.
SC2 from an SC2 supply source is supplied to the SC2 lower pipe 58. SC2 is supplied to the lower surface nozzle 50 by opening the SC2 lower valve 63 in a state where the other valves included in the lower side liquid supply unit are closed, whereby SC2 is discharged upward from the discharge port 50 a.
To CO2The underwater pipe 60 is supplied with CO2CO of water supply source2And (3) water. By opening CO in a state where other valves included in the lower liquid supply unit are closed2A submerged valve 65 to supply CO to the lower surface nozzle 502Water, thereby discharging CO upward from the discharge port 50a2And (3) water.
A suction device (not shown) is connected to a downstream end of the lower suction pipe 59. The suction device is, for example, a jet type suction device. The jet type suction device comprises a vacuum generator and an aspirator. In the operating state of the suction device, the interior of the suction device is depressurized to suck the interior of the lower suction pipe 59, and as a result, the operation of the suction device is activated. In a state where the operation of the suction device is activated, the interior of the lower suction pipe 59 is sucked by opening the lower suction valve 64 while closing the other valves included in the lower liquid supply unit, and the liquid in the internal space (flow space) of the lower connection portion 56 and the liquid in the interior of the lower common pipe 55 are sucked by the suction device.
The second lower supply unit 52 includes: an SC1 lower pipe 66 connected to the lower surface nozzle 50; and an SC1 lower valve 67 inserted into the SC1 lower pipe 66. SC1 from an SC1 supply source is supplied to the SC1 lower pipe 66. SC1 is supplied to the lower surface nozzle 50 by opening the SC1 lower valve 67 in a state where the other valves included in the lower side liquid supply unit are closed, whereby SC1 is discharged upward from the discharge port 50 a.
The third lower supply unit 53 includes: an HF lower pipe 68 connected to the lower surface nozzle 50; and an HF lower valve 69 inserted into the HF lower pipe 68. HF is supplied from an HF supply source to the HF lower pipe 68. HF is supplied to the lower surface nozzle 50 by opening the HF lower valve 69 in a state where other valves included in the lower side liquid supply unit are closed, whereby HF is discharged upward from the discharge port 50 a. In this embodiment, the HF is, for example, diluted dilute hydrofluoric acid (DHF).
In this embodiment, the lower surface nozzle 50 and CO are arranged2Underwater piping 60 and CO2The underwater valve 65 constitutes a highly conductive liquid supply unit.
Fig. 3A is a block diagram for explaining an electrical configuration of a main part of the substrate processing apparatus 1.
The control device 3 is configured using a microcomputer, for example. The control device 3 includes: an arithmetic unit such as a CPU; storage units such as fixed memory devices, hard disk drives, and the like; and an input-output unit. The storage unit stores a program for executing the arithmetic unit.
The control device 3 is connected to the rotary motor 12, the opposing member elevating unit 27, and the like as control targets. The control device 3 controls the operations of the rotation motor 12, the opposed member elevating unit 27, and the like according to a preset program.
The controller 3 opens and closes the DIW upper valve 42, the SC2 upper valve 43, the upper suction valve 44, the SC1 upper valve 47, the HF upper valve 49, the DIW lower valve 62, the SC2 lower valve 63, the lower suction valve 64, and the CO according to a preset program2Subsea valve 65, SC1 lower valve 67, HF lower valve 69.
Hereinafter, a case where a substrate W having a pattern 100 formed on a front surface (front surface) Wa, which is a pattern forming surface (device forming surface), is processed will be described.
Fig. 3B is a cross-sectional view showing an enlarged view of the surface Wa of the substrate W to be processed in the substrate processing apparatus 1. The substrate W to be processed is, for example, a silicon wafer, and a pattern 100 is formed on a surface Wa which is a pattern forming surface. The pattern 100 is, for example, a fine pattern. As shown in fig. 3B, the pattern 100 may be a pattern in which convex (columnar) structures 101 are arranged in rows and columns. In this case, the line width W1 of the structure 101 is, for example, about 3nm to 45nm, and the gap W2 of the pattern 100 is, for example, about 10nm to several μm. The film thickness T of the pattern 100 is, for example, about 0.2 μm to 1.0. mu.m. In addition, the aspect ratio (the ratio of the film thickness T to the line width W1) of the pattern 100 may be, for example, about 5 to 500 (typically about 5 to 50).
The pattern 100 may be a pattern in which a line pattern formed of fine trenches (trenches) is repeatedly arranged. In addition, the pattern 100 may be formed by providing a plurality of fine holes (void) or pores on the film.
The pattern 100 includes an insulating film, for example. In addition, the pattern 100 may include a conductor film. More specifically, the pattern 100 is formed of a laminated film in which a plurality of films are laminated, and may further include an insulating film and a conductive film. The pattern 100 may be a pattern composed of a single film. The insulating film may be a silicon oxide film (SiO2 film) or a silicon nitride film (SiN film). The conductive film may be an amorphous silicon film into which impurities are introduced for lowering the resistance, or may be a metal film (e.g., TiN film).
In addition, the pattern 100 may be a hydrophilic film. As the hydrophilic film, a TEOS film (one kind of silicon oxide film) can be exemplified.
Fig. 4 is a flowchart for explaining the contents of the 1 st substrate processing example executed in the processing unit 2. Fig. 5A to 5C are schematic views showing substrates when the steps of the 1 st substrate processing example are performed, as viewed horizontally. Fig. 6A to 6C are diagrams for explaining changes in the charged state of the substrate W in each step of the 1 st substrate processing example.
A1 st substrate processing example will be described with reference to fig. 1 to 4. Fig. 5A to 6C are appropriately described. The 1 st substrate processing example is a cleaning process for removing foreign matter (particles) from the surface of the substrate W. The second substrate processing example and the third substrate processing example, which will be described later, are also cleaning processes for removing foreign matter from the surface of the substrate W.
Unprocessed substrates W (for example, circular substrates having a diameter of 300 mm) are carried into the processing unit 2 from the substrate stocker C by the indexer robot IR and the substrate transfer robot CR, and are carried into the processing chamber 4, and the substrates W are transferred to the spin chuck 5 with their surfaces Wa (pattern forming surface, device forming surface, see fig. 3B, etc.) facing upward, and are held by the spin chuck 5 (substrate holding step, S1 of fig. 4: carrying-in substrates W). In this state, the back surface Wb (see fig. 6A and the like) of the substrate W faces downward.
The substrate carried into the internal space of the processing chamber 4 may accumulate charges (i.e., be charged) on the substrate W in a preceding process (ion implantation or dry etching). When the substrate W is charged, as shown in fig. 6A, the charge is mainly accumulated on the surface Wa of the substrate W. More specifically, the electric charges enter the inside of the pattern 100 of the surface Wa of the substrate W. When the chemical liquid (the conductive chemical liquid such as SC1 or SC2) is supplied to the substrate W, the surface Wa of the substrate W comes into contact with the chemical liquid to cause a rapid change in electric charge on the surface Wa of the substrate W, and electrostatic discharge may occur at or near the position where the chemical liquid is deposited. As a result, local defects may occur on the surface Wa of the substrate W, such as the pattern 100 being broken or the pattern 100 being perforated. Therefore, before the chemical liquid supplying step S5, the high-conductivity liquid supplying step S3 and the low-conductivity liquid supplying step S4 are performed to remove electricity from the substrate W.
After the substrate transfer robot CR is retracted outside the processing unit 2, the control device 3 controls the spin motor 12 to increase the spin speed of the spin base 14 to a predetermined neutralization spin speed (approximately less than 500rpm, for example, approximately 200rpm) and maintain the neutralization spin speed (S2 in fig. 4: the substrate W starts to spin).
The control device 3 controls the opposing member lifting and lowering unit 27 to lower the opposing plate 17 from the retracted position, and thereby the opposing plate is disposed at the proximity position as shown in fig. 5A.
When the rotation of the substrate W reaches the neutralization rotation speed, the control device 3 performs supply of CO, which is a highly conductive liquid (a liquid having lower conductivity than the chemical liquids (e.g., SC1, SC2)), to the back surface Wb of the substrate W without supplying the CO to the front surface Wa of the substrate W as shown in fig. 5A2And a step of supplying highly conductive liquid to water (S3 in fig. 4). CO 22The water contains ions, soHas a certain degree of high conductivity. CO supplied to the substrate W in the highly conductive liquid supplying step S32The resistivity of water (high conductivity at low resistivity) is, for example, 10-6The range of M.OMEGA.cm to 20 M.OMEGA.cm, more specifically, about 20 M.OMEGA.cm to about 30 M.OMEGA.cm.
Specifically, the control device 3 turns on the CO2A subsea valve 65. Thereby, CO is discharged from the discharge port 50a of the lower surface nozzle 50 toward the center of the rear surface Wb (i.e., the lower surface) of the rotating substrate W2And (3) water. CO liquoring to the back surface Wb of the substrate W2The water moves toward the peripheral edge of the substrate W by a centrifugal force generated by the rotation of the substrate W. Thereby, CO is formed to cover the entire region of the back surface Wb of the substrate W2A liquid film of water.
Due to CO2Since the conductivity of water is high, CO as a highly conductive liquid is supplied to the back surface Wb of the substrate W2Water can effectively reduce the amount of electric charges accumulated in the pattern 100 on the substrate W. CO is supplied to the back surface Wb of the substrate W2Water can thereby extract electric charges that have entered the inside of the pattern 100 on the surface Wa of the substrate W to the outer surface of the pattern 100 as shown in fig. 6B. That is, CO as a highly conductive liquid is supplied to the back surface Wb of the substrate W2Water can diffuse the local charge distribution on the surface Wa of the substrate W. Since the charges are accumulated on the front surface Wa (pattern 100) of the substrate W, even if CO is supplied to the rear surface Wb of the substrate W2The water hardly causes electrostatic discharge on the back surface Wb of the substrate W.
In the highly conductive liquid supplying step S3, if CO is supplied to the back surface Wb of the substrate W2When the liquid is supplied to the surface Wa of the substrate W together with the water, electrostatic discharge may occur on the surface Wa of the substrate W due to the liquid adhering to the surface Wa of the substrate W.
In the highly conductive liquid supplying step S3, CO is not supplied to the rear surface Wb of the substrate W2Since the liquid is supplied to the surface Wa of the substrate W simultaneously with the water, the electrostatic discharge on the surface Wa of the substrate W can be more effectively suppressed or prevented.
In addition, in high conductanceIn the electro-liquid supplying step S3, CO is supplied to the back surface Wb of the substrate W while the counter member 6 is disposed at the close position, that is, while the front surface Wa of the substrate W is protected by the substrate facing surface 17a of the counter member 62And (3) water. Therefore, CO can be favorably suppressed or prevented2The water flows around from the rear surface Wb of the substrate W toward the front surface Wa of the substrate W.
An inert gas pipe (not shown) may be further connected to the upper surface nozzle 30 of the counter member 6, and an inert gas valve (not shown) may be inserted in the inert gas pipe. In this case, an inert gas (e.g., N) is supplied from an inert gas supply source to the inert gas pipe2Gas, helium, argon, or a mixed gas thereof). The inactive gas valve is controlled by the control device 3. In this case, in the highly conductive liquid supplying step S3, the control device 3 opens the inert gas valve in a state where the opposing member 6 is disposed at the close position, thereby supplying the inert gas to the upper surface nozzle 30 through the inert gas pipe, and discharging the inert gas downward from the discharge port 30a toward the center portion of the surface Wa of the substrate W. Thus, a flow of the inert gas flowing from the center portion toward the peripheral portion of the substrate W is formed along the upper surface of the substrate W. Therefore, CO can be more favorably suppressed or prevented2The water flows around from the rear surface Wb of the substrate W toward the front surface Wa of the substrate W.
If CO is started2When a first charge removal period (for example, about 60 seconds) set in advance has elapsed since the discharge of water, the control device 3 turns off the CO2Subsea valve 65 to stop CO2The water is discharged from the lower surface nozzle 50. Thereby, the highly conductive liquid supplying step S3 is ended.
After the highly conductive liquid supplying step S3 is completed, the control device 3 opens the lower suction valve 64. Thereby, CO is sucked and removed from the interior of the lower common pipe 55 and the interior space of the lower connection portion 562And (3) water. CO removal2After the water, the control device 3 closes the lower suction valve 64.
The control device 3 controls the opposing member lifting and lowering unit 27 to lift the opposing plate 17 from the close position, and thereby arranges the opposing plate at the upper position as shown in fig. 5B.
Next, as shown in fig. 5B, the controller 3 supplies the low-conductivity liquid (chemical liquid having a conductivity ratio (e.g., SC1, SC2)) and the high-conductivity liquid (e.g., CO) to the front surface Wa of the substrate W and the back surface Wb of the substrate W2Water) low) is supplied to the substrate (S4 of fig. 4). DIW has a relatively low conductivity because it contains few ions. The resistivity of the DIW supplied to the substrate W in the low-conductivity liquid supplying step S4 is, for example, in the range of 10M Ω · cm to 20M Ω · cm, more specifically, about 18M Ω · cm.
Specifically, the control device 3 opens the DIW upper valve 42. Thereby, the DIW is discharged from the discharge port 30a of the upper surface nozzle 30 toward the center of the surface Wa (i.e., the upper surface) of the rotating substrate W. The DIW applied to the surface Wa of the substrate W moves toward the peripheral edge of the substrate W by a centrifugal force generated by the rotation of the substrate W. Thereby, a liquid film of DIW is formed covering the entire surface Wa of the substrate W. At the same time, the control device 3 opens the DIW lower valve 62. Thereby, the DIW is discharged from the discharge port 50a of the lower surface nozzle 50 toward the center of the rear surface Wb (i.e., the lower surface) of the rotating substrate W. Thereby, a liquid film of DIW is formed covering the entire region of the back surface Wb of the substrate W.
As shown in FIG. 6C, CO is supplied to the rear surface Wb of the substrate W2The charges drawn out to the outer surface of the pattern 100 by the water are effectively removed by supplying DIW to the surface Wa of the substrate W. In addition, since the conductive liquid (DIW) is supplied to the surface Wa of the substrate W after the amount of electric charges from the substrate W is reduced, the occurrence of electrostatic discharge can be effectively suppressed or prevented. Further, since the conductive liquid is DIW having a low conductivity, the occurrence of electrostatic discharge can be more effectively suppressed or prevented.
The DIW is supplied to the front surface Wa of the substrate W and also supplied to the rear surface Wb of the substrate W. This enables the charges accumulated on the substrate W to be removed more effectively. When a second predetermined charge removal period (for example, about 60 seconds) elapses after the discharge of the DIW is started, the controller closes the upper DIW valve 42 and the lower DIW valve 62 to stop the discharge of the DIW from the upper surface nozzle 30 and the discharge of the DIW from the lower surface nozzle 50. Thereby, the low-conductivity liquid supplying step S4 ends.
After the low-conductivity liquid supply step S4 is completed, the control device 3 opens the upper suction valve 44. This removes DIW by suction from the interior of the upper common pipe 35 and the interior space of the upper connection portion 36. After the DIW is removed, the control device 3 closes the upper suction valve 44.
The controller 3 controls the spin motor 12 to increase the spin speed of the spin base 14 to a predetermined liquid processing spin speed (for example, about 500rpm) and maintain the same at the liquid processing spin speed.
Next, as shown in fig. 5C, the control device 3 performs a chemical solution supply step of supplying a chemical solution to the front surface Wa of the substrate W to perform processing (cleaning) on the front surface Wa of the substrate W (S5 in fig. 4). In the chemical liquid supply step S5 according to this embodiment, the control device 3 supplies the chemical liquid to the back surface Wb of the substrate W in addition to the front surface Wa of the substrate W, to perform processing (cleaning) (simultaneous double-side processing) on the back surface Wb of the substrate W. In the chemical liquid supplying step S5, SC1 or SC2 is first supplied to the front surface Wa of the substrate W. SC1 and SC2 have high conductivity because they contain a large amount of ions. The resistivity of the SC1 supplied to the substrate W is, for example, 10-3In the order of M Ω · cm. The resistivity of the SC2 supplied to the substrate W is, for example, about 10-5About M omega cm.
SC1 and SC2 are conductivity ratios CO2A liquid high in water. Therefore, if SC1 or SC2 is supplied to the surface Wa of the substrate W in a state where the surface Wa of the substrate W is not sufficiently neutralized (a state where a large amount of electric charges are accumulated in the surface Wa of the substrate W), when SC1 or SC2 deposits liquid on the surface Wa of the substrate W, the surface Wa of the substrate W comes into contact with SC1 or SC2 to cause a rapid change in electric charges on the surface Wa of the substrate W, and electrostatic discharge may occur at or near the liquid application position of the chemical liquid on the surface Wa of the substrate W.
However, the heat transfer efficiency is improved by DIW and CO2Since the SC1 or SC2 is supplied to the surface Wa of the substrate W from which the electric charge has been sufficiently removed by the water, no electrostatic discharge occurs when the SC1 or SC2 deposits the liquid on the surface Wa of the substrate W in the chemical liquid supplying step S5.
After the chemical supply step S5 is completed, the control device 3 performs a rinse step of supplying DIW as a rinse liquid to the front surface Wa of the substrate W to rinse the chemical adhering to the front surface Wa of the substrate W (S6 in the drawing). In the rinsing step S6 according to this embodiment, the DIW serving as the rinsing liquid is supplied not only to the front surface Wa of the substrate W but also to the rear surface Wb of the substrate W, thereby performing processing (cleaning) (simultaneous double-side processing) on the rear surface Wb of the substrate W.
The controller 3 opens the upper DIW valve 42 and the lower DIW valve 62 to supply DIW to the front surface Wa and the back surface Wb of the substrate W. When a predetermined period of time has elapsed after the upper DIW valve 42 and the lower DIW valve 62 are opened, the controller 3 closes the upper DIW valve 42 and the lower DIW valve 62. Thus, the supply of DIW to the front surface Wa and the back surface Wb of the substrate W is stopped, and the rinsing step S6 is completed. Although DIW is used as the rinse liquid, CO may be used2Water is used as the rinse.
Thereafter, the control device 3 controls the opposing member elevating unit 27 to raise the opposing plate 17 to the retracted position.
Next, the control device 3 executes a drying process (S7 of fig. 4). Specifically, the controller 3 increases the rotation speed of the substrate W to a predetermined spin-off speed (for example, several thousand rpm) which is higher than the liquid processing rotation speed, and rotates the substrate W at the spin-off speed. Thus, the liquid applied to the substrate W by the large centrifugal force is spun off around the substrate W. The liquid is thus removed from the substrate W, and the substrate W is dried.
When a predetermined period of time has elapsed since the drying process S7 was started, the control device 3 controls the spin motor 12 to stop the rotation of the spin chuck 5 (i.e., the rotation of the substrate W) (S8 in fig. 4). Thereafter, the substrate transfer robot CR enters the internal space of the processing chamber 4, and carries out the processed substrate W to the outside of the processing chamber 4 (S9 in fig. 4). The substrate W is transferred from the substrate transfer robot CR to the indexer robot IR, and is stored in the substrate storage C by the indexer robot IR.
Fig. 7A to 7C are diagrams for explaining the contents of the chemical liquid supplying step S5 included in the 1 st substrate processing example. The chemical liquid supplying step S5 is a step of cleaning the front surface Wa and the back surface Wb of the substrate W with a chemical liquid.
Examples of the chemical liquid supplying step S5 include a first chemical liquid supplying step S51, a second chemical liquid supplying step S52, and a third chemical liquid supplying step S53.
The first chemical liquid supplying step S51 includes: an SC1 supplying step of supplying SC1 to the front surface Wa and the back surface Wb of the substrate W; after the SC1 supplying step, DIW (or CO) as a rinse liquid is supplied to the front surface Wa and the back surface Wb of the substrate W2Water) intermediate rinsing process; an SC2 supplying step of supplying SC2 to the front surface Wa and the back surface Wb of the substrate W after the intermediate rinsing step; after the SC2 supplying step, DIW (or CO) as a rinse liquid is supplied to the front surface Wa and the back surface Wb of the substrate W2Water) intermediate rinsing process; and a DHF supply step of supplying DHF (diluted hydrofluoric acid) to the front surface Wa and the back surface Wb of the substrate W after the intermediate rinsing step.
The second chemical liquid supplying step S52 includes: an SC2 supplying step of supplying SC2 to the front surface Wa and the back surface Wb of the substrate W; after the SC2 supplying step, DIW (or CO) as a rinse liquid is supplied to the front surface Wa and the back surface Wb of the substrate W2Water) intermediate rinsing process; and an SC1 supplying step of supplying SC1 to the front surface Wa and the back surface Wb of the substrate W after the intermediate rinsing step.
The third chemical liquid supplying step S53 includes an SC1 supplying step of supplying SC1 to the front surface Wa and the back surface Wb of the substrate W.
Further, a treatment liquid (chemical liquid or rinse liquid (DIW, CO in this embodiment)) is supplied from the upper surface nozzle 30 or the lower surface nozzle 50 using the upper mixing valve unit UMV or the lower mixing valve unit DMV2Water, SC2)), after the discharge of the treatment liquid from the upper surface nozzle 30 or the lower surface nozzle 50 is completed, the corresponding upper suction valve 44 or the lower suction valve 64 is opened, and DIW or CO is sucked and removed from the inside of the upper common pipe 35 or the lower common pipe 55 and the inner space of the upper connection portion 36 or the lower connection portion 562And (3) water.
As described above, according to this embodiment, before the chemical solution (SC1 or SC2) is supplied to the substrate W, first, CO is not supplied to the front surface Wa of the substrate W but to the back surface Wb of the substrate W2And (3) water. When the substrate W is charged, since charges are accumulated on the front surface Wa of the substrate W, even if CO is supplied to the rear surface Wb of the substrate W2The water hardly causes electrostatic discharge on the back surface Wb of the substrate W. In addition, due to CO2Since the conductivity of water is relatively high, CO is supplied to the rear surface Wb of the substrate W2The amount of electric charges accumulated on the substrate W can be effectively reduced by the water.
CO is supplied to the back surface Wb of the substrate W2Water, thereby, the electric charges that have entered the inside of the pattern 100 on the surface Wa of the substrate W can be extracted to the outer surface of the pattern 100.
Subsequently, DIW is supplied to the surface Wa of the substrate W. Thereby, the charges drawn to the outer surface of the pattern 100 can be effectively removed by the DIW. In addition, since the conductive liquid (DIW) is supplied to the surface Wa of the substrate W after the amount of electric charges from the substrate W is reduced, the occurrence of electrostatic discharge can be effectively suppressed or prevented. Further, since the conductive liquid is DIW having a low conductivity, the occurrence of electrostatic discharge can be more effectively suppressed or prevented.
Then, for the DIW and CO2The chemical liquid supplying step S5 is performed on at least the surface Wa of the substrate W from which the charges have been sufficiently removed by the water. Therefore, in the chemical liquid supplying step S5, the occurrence of electrostatic discharge associated with supplying SC1 and SC2 to the front surface Wa of the substrate W can be suppressed or prevented.
This can suppress or prevent the supply of the liquid (DIW, CO) to the surface Wa of the substrate W2Water, chemical liquid), and thus the occurrence of local defects on the surface Wa of the substrate W can be suppressed or prevented.
Next, the static elimination test will be described.
In the neutralization test, the substrate treatment methods (cleaning treatments) according to examples and comparative examples described below were applied to the sample.
Example (b): a substrate W (semiconductor wafer having an outer diameter of 300(mm)) having a pattern 100 (see fig. 3B) disposed on a surface Wa is used as a sample, and is held by the spin chuck 5 with the surface Wa facing upward (see fig. 2). The sample held by the spin chuck 5 and rotated is subjected to the 1 st substrate processing example (cleaning process) shown in fig. 4 described above by using the processing unit 2.
Comparative examples 1 to 9: a substrate W (semiconductor wafer having an outer diameter of 300(mm)) having a pattern 100 (see fig. 3B) disposed on a surface Wa is used as a sample, and is held by the spin chuck 5 with the surface Wa facing upward (see fig. 2). The sample held by the spin chuck 5 in a rotating state is subjected to a cleaning process using the processing unit 2. The comparative examples 1 to 9 are different from the example shown in fig. 4 in the content of the electricity removing step (the high-conductivity liquid supplying step S3 and the low-conductivity liquid supplying step S4 in fig. 4).
Comparative example 1: the step corresponding to the high-conductivity liquid supplying step S3 and the step corresponding to the low-conductivity liquid supplying step S4 are not performed. That is, first, the chemical liquid supplying step S5 is performed.
Comparative example 2: instead of the highly conductive liquid supply step S3, CO is supplied not to the back surface Wb of the substrate W but to the front surface Wa of the substrate W2And (5) water. The step corresponding to the low-conductivity liquid supply step S4 is not performed. That is, CO is supplied to the surface Wa of the substrate W2After the water is removed, the chemical liquid supply step S5 is performed.
Comparative example 3: the highly conductive liquid supply step S3 is performed. The step corresponding to the low-conductivity liquid supply step S4 is not performed. That is, the chemical liquid supplying step S5 is performed after the highly conductive liquid supplying step S3.
Comparative example 4: instead of the highly conductive liquid supply step S3, CO is supplied not only to the back surface Wb of the substrate W2Water and CO is supplied to the surface Wa of the substrate W2And (5) water. The step corresponding to the low-conductivity liquid supply step S4 is not performed. That is, CO is supplied to the surface Wa of the substrate W2After the water is removed, the chemical liquid supply step S5 is performed.
Comparative example 5: the step corresponding to the highly conductive liquid supplying step S3 is not performed. First, a step corresponding to the low-conductivity liquid supply step S4 is performed. In this step, a step of supplying DIW to the front surface Wa of the substrate W without supplying it to the rear surface Wb of the substrate W is performed.
Comparative example 6: the step corresponding to the highly conductive liquid supplying step S3 is not performed. First, a step corresponding to the low-conductivity liquid supply step S4 is performed. In this step, a step of supplying DIW to the back surface Wb of the substrate W without supplying the DIW to the front surface Wa of the substrate W is performed.
Comparative example 7: the step corresponding to the highly conductive liquid supplying step S3 is not performed. The low-conductivity liquid supplying step S4 is first performed.
Comparative example 8: instead of the highly conductive liquid supply step S3, CO is supplied not only to the back surface Wb of the substrate W2Water and CO is supplied to the surface Wa of the substrate W2And (5) water. After this step, the low-conductivity liquid supply step S4 is performed.
Comparative example 9: instead of the highly conductive liquid supply step S3, CO is supplied not to the back surface Wb of the substrate W but to the front surface Wa of the substrate W2And (5) water. After this step, the low-conductivity liquid supply step S4 is performed.
The test results are shown in fig. 8. In the examples, no electrostatic discharge occurred. In contrast, in comparative examples 1 to 9, traces of electrostatic discharge were observed in the center of the surface Wa of the substrate W. In comparative examples 2, 4, 8 and 9, first, CO having high conductivity is supplied to the surface of the substrate W2And (3) water. Is thought to accompany the CO2The supply of water causes electrostatic discharge.
In comparative examples 5 and 7, first, DIW having low conductivity is supplied to the surface Wa of the substrate W. Since the surface Wa of the substrate W (particularly, the electric charges that have entered the pattern 100 as shown in fig. 6A) are not sufficiently removed by the supply of the DIW, it is considered that electrostatic discharge occurs as the chemical solution is subsequently supplied to the surface Wa of the substrate W.
In comparative examples 1, 3 and 6, first, a chemical liquid having high conductivity is supplied to the surface Wa of the substrate W. Since the surface Wa of the substrate W is not sufficiently removed of electricity before the supply of the chemical solution is started, it is considered that electrostatic discharge occurs as the chemical solution is supplied to the surface Wa of the substrate W.
Although one embodiment of the present invention has been described above, the present invention can be implemented in other embodiments.
Fig. 9 is a flowchart for explaining a second example of substrate processing performed by the processing unit 2. The second substrate processing example shown in fig. 9 is different from the 1 st substrate processing example shown in fig. 4 and the like in that: the low-conductivity liquid supplying step S11 is adopted as the low-conductivity liquid supplying step in place of the low-conductivity liquid supplying step S4. In the low-conductivity liquid supply step S11, the DIW is supplied not to both the front surface Wa and the back surface Wb of the substrate W, but only to the front surface Wa of the substrate W.
In the substrate processing example 1 shown in fig. 4, in the low-conductivity liquid supply step S4, DIW as a low-conductivity liquid may be supplied to the front surface Wa of the substrate W and CO as a high-conductivity liquid may be supplied to the rear surface Wb of the substrate W2And (3) water.
Fig. 10 is a flowchart for explaining a third example of substrate processing performed by the processing unit 2.
The third substrate processing example shown in fig. 10 is different from the 1 st substrate processing example shown in fig. 4 and the like in that the following second highly conductive liquid supply step S21 is performed: after the low-conductivity liquid supply step S4 and before the chemical liquid supply step S5, CO as a high-conductivity liquid (a liquid having a lower conductivity than the chemical liquids (e.g., SC1 and SC2)) is supplied to at least the front surface Wa (both the front surface Wa and the back surface Wb (or only the front surface Wa)) of the substrate W in order to remove electricity from the substrate W2And (3) water.
As indicated by the dashed line in fig. 2, the upper mixing valve unit UMV may further comprise CO connected to the upper connection 362Overwater piping 40 and convection CO2CO for opening and closing the water piping 402And an on-water valve 45. By opening CO in a state where other valves included in the upper side liquid supply unit are closed2Water upper valve 45 to supply CO to the upper surface nozzle 302Water, thereby discharging CO downwardly from the discharge port 30a2And (3) water.
According to the third substrate processing example, CO is supplied to at least the front surface Wa of the substrate W after DIW is supplied to the substrate W until the chemical liquid is supplied to the substrate W2And (3) water. That is, DIW → CO is applied to the surface Wa of the substrate W2Sequence of waterThe supply is performed. Due to DIW → CO2The conductive liquid is supplied to the substrate in a stepwise manner in the order of water → chemical liquid, i.e., in order from the one having lower conductivity, so that it is possible to prevent DIW and CO from being caused by2When electrostatic discharge occurs due to water, the substrate W is favorably removed, and thus, the electrostatic discharge can be effectively suppressed from occurring during the chemical liquid supply.
The chemical liquid supplying step S5 may be a step of processing both surfaces (the front surface Wa and the back surface Wb) of the substrate W with a chemical liquid, or the chemical liquid supplying step S5 may be a step of processing one surface (the front surface Wa or the back surface Wb) of the substrate W with a chemical liquid.
In addition, although SC1 and SC2 are exemplified as the chemical liquid to be first supplied to the surface Wa of the substrate W in the chemical liquid supplying step S5, other chemical liquids (ozone water, SPM (including H), etc.) may be used2SO4And H2O2Mixed liquid of (2)), HF, etc.).
Further, CO is exemplified as a combination of a highly conductive liquid and a low conductive liquid2A combination of water and DIW, in addition, may be exemplified by: NH (NH)3Combination of water and DIW, NH4Combination of aqueous OH solution (1: 100) and DIW, H2SO4Combinations of aqueous solutions with DIW, aqueous HCl (1: 50 diluted hydrochloric acid) with DIW, aqueous HF (1: 500 diluted hydrofluoric acid) with DIW, and the like.
Further, although the cleaning process for cleaning the substrate W is described as the first to third substrate processing examples, the present invention may be applied to an etching process for etching the substrate W using an etching solution.
In the above-described embodiment, the substrate processing apparatus 1 has been described as an apparatus for processing the surface of a substrate W formed of a semiconductor wafer, but the substrate processing apparatus may be an apparatus for processing a substrate for fpd (flat Panel display) such as a substrate for liquid crystal display device or an organic EL (electroluminescence) display device, a substrate for optical disk, a substrate for magnetic disk, a substrate for optical disk, a substrate for photomask, a ceramic substrate, a substrate for solar cell, or the like. However, the effect of the present invention is particularly remarkably exhibited when the surface of the substrate W exhibits hydrophobicity.
The embodiments of the present invention are described in detail, but these embodiments are merely specific examples used for clarifying technical content of the present invention, and the present invention should not be construed as being limited by these specific examples, and the scope of the present invention is defined only by the appended claims.
This application corresponds to Japanese patent application No. 2018-009157, filed on 23.1.2018 with the office, the entire disclosure of which is incorporated herein by reference.
Description of the reference numerals
1: substrate processing apparatus
3: control device
4: processing chamber
5: rotating clamp (base plate holding unit)
30: upper surface nozzle (Low conductivity liquid supply unit)
37: DIW upper pipe (Low conductivity liquid supply unit)
42: DIW upper valve (Low conductivity liquid supply unit)
50: lower surface nozzle (highly conductive liquid supply unit)

Claims (11)

1. A substrate processing method for processing a substrate by supplying a chemical solution to a surface of the substrate on which a pattern is formed,
the substrate processing method includes:
a substrate holding step of holding a substrate;
a chemical liquid supply step of supplying the chemical liquid to at least the surface of the substrate;
a low-conductivity liquid supply step of supplying a low-conductivity liquid having a conductivity lower than that of the chemical liquid to the surface of the substrate in order to remove electricity from the substrate before the chemical liquid supply step; and
and a high-conductivity liquid supply step of supplying, to a back surface of the substrate on the opposite side of the front surface, a high-conductivity liquid having a conductivity lower than the chemical solution and higher than the low-conductivity liquid, without supplying the front surface of the substrate with electricity, before the low-conductivity liquid supply step, in order to remove electricity from the substrate.
2. The substrate processing method according to claim 1, further comprising the steps of: and supplying the low-conductivity liquid or the high-conductivity liquid to the back surface of the substrate to remove electricity from the substrate simultaneously with the low-conductivity liquid supplying step.
3. The substrate processing method according to claim 1 or 2, wherein the highly conductive liquid supply step is not performed while the liquid is supplied to the surface of the substrate.
4. The substrate processing method according to claim 1 or 2, further comprising: and an approach position arrangement step of arranging an opposing member having a substrate opposing surface opposing the entire surface of the substrate at an approach position where the substrate opposing surface is brought close to the surface of the substrate, while performing the highly conductive liquid supply step.
5. The substrate processing method according to claim 1 or 2, further comprising: and a second highly conductive liquid supply step of supplying the highly conductive liquid to at least the surface of the substrate after the low conductive liquid supply step and before the chemical liquid supply step in order to remove electricity from the substrate.
6. The substrate processing method according to claim 1 or 2, wherein the substrate holding step includes a step of holding the substrate by bringing a conductive portion formed of a conductive material into contact with a peripheral portion of the substrate.
7. The substrate processing method of claim 1 or 2, wherein the low conductivity liquid comprises deionized water.
8. The substrate processing method according to claim 1 or 2, wherein the highly conductive liquid contains an ion-containing liquid.
9. A substrate processing apparatus, comprising:
a substrate holding unit for holding a substrate having a pattern formed on a surface thereof;
a chemical liquid supply unit configured to supply a conductive chemical liquid to the surface of the substrate held by the substrate holding unit;
a low-conductivity liquid supply unit configured to supply a low-conductivity liquid having a conductivity lower than the chemical liquid to the surface of the substrate held by the substrate holding unit;
a high-conductivity liquid supply unit configured to supply a high-conductivity liquid having a conductivity lower than the chemical solution and higher than the low-conductivity liquid to a back surface of the substrate held by the substrate holding unit on the opposite side of the front surface; and
a control device for controlling the chemical liquid supply unit, the low conductivity liquid supply unit, and the high conductivity liquid supply unit,
the control device executes the following steps:
a chemical liquid supply step of supplying the chemical liquid to at least the surface of the substrate;
a low-conductivity liquid supply step of supplying the low-conductivity liquid to the surface of the substrate for removing electricity from the substrate before the chemical liquid supply step; and
and a high-conductivity liquid supply step of supplying the high-conductivity liquid to the back surface of the substrate on the opposite side of the front surface, without supplying the high-conductivity liquid to the front surface of the substrate, before the low-conductivity liquid supply step.
10. The substrate processing apparatus of claim 9, further comprising: and an opposing member having a substrate opposing surface that opposes the entire surface of the substrate held by the substrate holding unit, and being disposed at an approaching position where the substrate opposing surface and the surface of the substrate are brought close to each other.
11. The substrate processing apparatus according to claim 9 or 10, wherein the substrate holding unit has a conductive pin formed using a conductive material, the conductive pin being a holding pin that contact-supports a peripheral edge portion of the substrate.
CN201880087065.0A 2018-01-23 2018-12-21 Substrate processing method and substrate processing apparatus Pending CN111630635A (en)

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