JP2003188138A - Solution processing method and solution processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To protect a device formed on a substrate as the processing object and also improve solution processing efficiency by controlling the static charge on the substrate generated during the solution processing. <P>SOLUTION: The cleaning process is performed by supplying a cleaning solution from a cleaning solution supply nozzle 63 to the surface of a semiconductor wafer W which is held to rotate with a spin chuck 62. During this cleaning process, the discharging fluid control lable of charging is supplied to the semiconductor wafer W and charges are removed from the front surface side of the semiconductor wafer W at the time of cleaning. Accordingly, the device formed on the semiconductor wafer W can be protected and solution processing efficiency can also be improved by controlling the charging on the semiconductor wafer W generated during the solution process. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid processing method and a liquid processing apparatus, and more particularly to a liquid processing method for subjecting a surface of a substrate such as a semiconductor wafer or an LCD substrate to a predetermined process such as a cleaning process. And a liquid processing apparatus.

[0002]

2. Description of the Related Art Generally, in the manufacturing process of semiconductor devices such as semiconductor wafers and LCD substrates, the front and back surfaces of semiconductor wafers and LCD substrates (hereinafter referred to as wafers), especially wafers on which semiconductor devices are formed, etc. Since it is necessary to maintain high surface cleanliness, the surface of a wafer or the like is subjected to, for example, a cleaning treatment before and after various manufacturing steps.

As a method of cleaning the surface of a wafer or the like, a pressurized processing liquid such as pure water or a chemical liquid is supplied to the surface of a rotating wafer or the like, for example, a method of cleaning by spraying or a liquid such as pure water is supplied. At the same time, there is a method in which a brush is brought into contact with the surface of a wafer or the like to perform a cleaning process.

By the way, when the processing liquid is supplied to the surface of the rotating wafer or the like to clean the surface as described above, FIG.
As shown in 0 (a), the processing liquid supply means such as the processing liquid supply nozzle N ejects the processing liquid such as pure water (DIW).
Collide with the surface of the wafer W or the like and diverge, a charging phenomenon occurs on the surface of the wafer W or the like, and residual charges are accumulated on the surface side of the wafer W or the like (see FIG. 10B).
This is because the charge generated during cleaning is due to the carrier diffusion phenomenon due to instantaneous bonding. Therefore, the conduction band is a Fermi level (Fer).
Wafer W having an energy level close to mi level)
Although the surface side is positively charged (see FIG. 11A), the residual charge after the treatment shows a negative charge due to carrier diffusion due to Coulomb force (FIG. 11B). )reference). There is a possibility that the device formed on the surface of the wafer or the like may be destroyed by this charging, that is, the residual charge. Further, there is a possibility that the cleaning efficiency may be deteriorated due to the residual charge.

Generally, as a method of removing the electric charge (residual charge), a method of injecting an ionized gas onto the surface of a wafer or the like to remove the charge or a holding means such as a wafer such as a spin chuck is formed of a conductive material. It is conceivable to ground the wafer or the like.

[0006]

However, since the charging phenomenon in the above-mentioned cleaning treatment is a phenomenon that occurs at the moment during cleaning, and the charging speed is steep, the conventional static elimination method causes a time delay and cannot be dealt with. Is the current situation.

The present invention has been made in view of the above circumstances, and suppresses electrification of a substrate to be processed which occurs during liquid processing to protect a device formed on the substrate to be processed and to improve liquid processing efficiency. It is an object of the present invention to provide a liquid processing method and a liquid processing apparatus that can be improved.

[0008]

In order to achieve the above object, a first liquid processing method of the present invention comprises a step of supplying a processing liquid to the surface of a rotating substrate to be processed and performing the processing, During the process, a charged static elimination fluid is supplied to the substrate to be processed to remove charges that are charged on the surface side of the substrate to be processed during the process, and It is characterized in that the charge amount is formed so as to be controllable (Claim 1).

The second liquid processing method of the present invention comprises the steps of supplying a processing liquid to the surface of a rotating substrate to be processed, and rotating the substrate to be adhered to the substrate to be processed. And a drying step of removing the processing liquid, and a charge removing fluid that is charged during the processing step and the drying step is supplied to the substrate to be processed, and an electric charge is charged on the surface side of the substrate to be processed during the processing step. And a step of removing the charge, and the charge amount of the fluid is controllable (claim 2).

In the liquid processing method of the present invention, it is preferable that the static elimination fluid has the same charge polarity as the charge of the surface side of the substrate to be treated.

Further, in the liquid processing method of the present invention, the fluid is formed of pure water, and the pure water is passed through a tubular nozzle made of a charging material having the same polarity as the charging polarity on the surface side of the substrate to be processed, At this time, the charge amount can be controlled by controlling the supply flow rate of pure water while being charged by the frictional force at that time (Claim 4), or the fluid is formed by an inert gas and this inert gas is used. It is preferable that the charge amount of the inert gas is controllable by ionizing the gas by the ion generating means and adjusting the supply amount and / or the ionization amount of the inert gas (claim 5).

Further, it is preferable that the charge amount of the fluid is controlled based on the material of the substrate to be processed, the number of rotations of the substrate to be processed, the supply amount of the processing liquid, and the like (claim 6).

The charge removing fluid may be supplied at any location on the front surface or the back surface of the substrate to be processed, as long as it removes the electric charges on the surface of the substrate to be processed. It is preferable to supply it to the central portion on the back surface side of the substrate to be processed (claim 7).

In the liquid processing apparatus of the present invention, holding means for rotatably holding the substrate to be processed, rotating means for controllably rotating the holding means, and the substrate to be processed held by the holding means. A processing liquid supply means for supplying a processing liquid to the surface; and a static elimination fluid supply means for supplying a charged static elimination fluid to the substrate to be processed in order to remove charges charged on the surface side of the substrate to be processed, A charge control unit for controlling the charge amount of the static elimination fluid supply unit is provided (claim 8).

In the liquid processing apparatus of the present invention, the current removing body supplying means and the charging control means can be configured as follows.

For example, the static elimination fluid supply means is a tubular nozzle made of a charging material having the same polarity as the charging polarity on the surface side of the substrate to be processed, and a pure water supply source connected to the tubular nozzle via the supply pipe. And the charge control means can be formed by a flow rate control means provided in the supply pipe (claim 9). The static elimination fluid supply means is provided with an inert gas supply nozzle, an inert gas supply source connected to the inert gas supply nozzle via a supply pipe, and the supply pipe, and the substrate to be processed is provided. Or a controllable ion generating means for ionizing to the same polarity as the surface side charging polarity (claim 10), or the static elimination fluid supply means via an inert gas supply nozzle and a supply pipe. And an inert gas supply source connected to the inert gas supply nozzle, and an ion generating means that is interposed in the supply pipe and ionizes to the same polarity as the charging polarity on the surface side of the substrate to be processed. The charge control means may be formed by a flow rate control means provided in the supply pipe (claim 11).

Further, in the liquid processing apparatus of the present invention, the current removing body supplying means supplies a charged fluid for static elimination to the substrate to be processed in order to remove electric charges charged on the surface side of the substrate to be processed. As long as it is one of the above, the discharging form of the fluid for static elimination may be arbitrary, but it is preferable to provide the jet port of the current removing body supplying means on the substrate holding surface side of the central portion of the holding means (claim 12). ).

When pure water is used as the static elimination fluid, it is preferable that the holding means is made of a conductive synthetic resin material.

According to the first, second, seventh, and eighth aspects of the present invention, when the processing liquid is supplied to the surface of the rotating substrate to be processed, the rotating substrate to be discharged is charged. By supplying the fluid, it is possible to remove charges that are charged on the surface side of the substrate to be processed during the processing step. Therefore, it is possible to suppress the charge generated on the substrate to be processed during the liquid processing. Further, by forming the charge amount of the static elimination fluid so as to be controllable, it is possible to eliminate the charge corresponding to different charge amounts of the substrate to be processed, and it is possible to control the interface potential during the process. In this case, the charge amount of the static elimination fluid is controlled based on the material of the substrate to be processed, the rotation speed of the substrate to be processed, the supply amount of the processing liquid, etc., so that the material of the substrate to be processed and the rotation of the substrate to be processed are controlled. The charge can be removed according to the different charge amount depending on the number, the supply amount of the treatment liquid, and the like (claim 6).

According to the second aspect of the present invention, during the processing step and the drying step, the charged static elimination fluid is supplied to the rotating substrate to be processed, so that the substrate to be processed is treated during the processing step. It is possible to remove the electric charge charged on the surface side. Therefore, it is possible to suppress the charge generated on the substrate to be processed during the liquid processing and the drying processing. Further, by forming the charge amount of the fluid in a controllable manner, it is possible to eliminate charges corresponding to different charge amounts depending on the material of the substrate to be processed, the rotation speed of the substrate to be processed, the supply amount of the processing liquid, and the like. , It is possible to control the interfacial potential during processing.

According to the third aspect of the invention, the charge polarity of the static elimination fluid is set to be the same as the polarity of the charge charged on the surface side of the substrate to be processed, so that the substrate to be processed is charged by the repulsion action. Can be further suppressed.

According to the fourth and ninth aspects of the invention, the static elimination fluid is formed of pure water, and the pure water is introduced into the tubular nozzle made of a charging material having the same polarity as the charging polarity on the surface side of the substrate to be processed. The charge amount can be controlled by controlling the supply flow rate of pure water while passing through and charging by the frictional force at that time, so it is possible to suppress the charging of the substrate to be processed using pure water, The substrate to be processed can be cleaned.
Further, for example, when pure water is used as the processing liquid in the cleaning process, the same pure water supply source can be used, so that the piping system can be simplified and the device can be downsized, and the cost can be reduced. Can be achieved.

According to the fifth, tenth and eleventh aspects of the present invention, the static elimination fluid is formed of an inert gas, the inert gas is ionized by the ion generating means, and the amount of the inert gas supplied and Alternatively, since the charge amount of the inert gas can be controlled by adjusting the ionization amount, the charge of the substrate to be processed can be suppressed by using the inert gas, and particles and the like can be prevented from reattaching. be able to.

According to the twelfth aspect of the present invention, by providing the injection port of the static elimination fluid supply means on the substrate-holding surface side of the substrate to be treated at the central portion of the holding means, the central portion of the substrate to be easily charged can be provided. Charging can be efficiently suppressed.

In addition, according to the invention of claim 13,
When pure water is used as the static elimination fluid, the holding means is made of a conductive synthetic resin material,
By leaking the charges generated by the static elimination fluid to the region held by the holding means in the substrate to be processed,
It is possible to control the polarity even in a portion where the fluid for static elimination does not hit, and it is possible to further improve the suppression of charging.
Also, since the holding means can be provided with corrosion resistance,
The life of the holding means and thus the device can be extended.

[0026]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will now be described in detail with reference to the drawings. In this embodiment, a case will be described in which the liquid processing apparatus according to the present invention is applied to a cleaning processing system for successively carrying in, cleaning, drying and carrying out semiconductor wafers.

The above-mentioned cleaning system is shown in FIGS.
As shown in FIG. 1, a cleaning processing unit 1 that appropriately performs a cleaning process on a semiconductor wafer W (hereinafter referred to as a wafer W) that is a substrate to be processed.
0 and a loading / unloading section 20 for loading / unloading the wafer W into / from the cleaning processing section 10.

The carry-in / carry-out unit 20 includes a carry-in / carry-out unit 22 having a mounting table 21 on which a carrier C for accommodating a plurality of, for example, 26 wafers W at appropriate intervals is mounted, a carrier C and a cleaning processing unit 10. An interface unit 24 including a wafer transfer mechanism 23 for transferring the wafer W between the two and a wafer transfer path (not shown) of the wafer transfer mechanism 23.
It consists of and.

In this case, for example, three carriers C are placed in a predetermined position on the mounting table 21 arranged in the loading / unloading section 22 side by side in the Y direction of the horizontal plane. In addition, a partition wall 25 between the loading / unloading unit 22 and the interface unit 24
In the position corresponding to the mounting place of the carrier C,
A window portion 26 is formed, and a window portion opening / closing mechanism 27 for opening / closing the window portion 26 with a shutter or the like is provided on the interface portion 24 side of the window portion 26.

The structure of the carrier C to be used may be arbitrary, and for example, one having a lid Ca for opening / closing the loading / unloading port of the wafer W can be used. In this case, the window opening / closing mechanism 27 is attached to the lid C of the carrier C.
It has a function of opening and closing a so that the lid C of the carrier C can be opened and closed with the loading / unloading side of the carrier C facing the window 26. When the window opening / closing mechanism 27 opens the window 26 and the lid Ca of the carrier C in this way, the wafer transfer mechanism 23 provided in the interface section 24 can access the carrier C, and the wafer W It becomes possible to carry.

Note that only a shutter for opening and closing the window 26 is provided in the window 26, and the lid Ca provided at the loading / unloading port of the carrier C is, for example, manually operated when it is placed on the placing table 21. Alternatively, a method of opening the loading / unloading may be used. If the carrier C is not provided with the lid Ca,
Of course, it is not necessary to provide a lid opening / closing mechanism. As described above, the structure of the window portion 26 can be appropriately and suitably designed according to the structure of the carrier C.

In this case, whether the wafer W is accommodated in the carrier C in the window opening / closing mechanism 27, for example, whether or not a predetermined number of wafers W are accommodated, the wafer W is moved forward and backward (X
Direction) and is not contained, or
A mapping sensor (not shown) is provided to detect whether or not the wafer W is accommodated obliquely in the height direction (Z direction). By starting the cleaning process after inspecting the accommodation state of the wafer W by this mapping sensor, the process can be performed reliably.

The wafer transfer mechanism 23 provided in the interface section 24 is movable in the Y direction and can access each carrier C mounted on the mounting table 21. The wafer holding arm 23 a of the wafer transfer mechanism 23 is configured to be movable in the X direction of the horizontal plane and rotatable in the XY plane (θ direction), and the carrier C is passed through the window 26. The wafer W is transferred between the wafer W and the wafer transfer unit (TRS) 30 provided in the cleaning processing unit 10 which will be described later.

The wafer transfer mechanism 23 having the above structure
Can transfer the wafer W from the loading / unloading unit 22 side to the cleaning processing unit 10 side, or conversely, can transfer the wafer W from the cleaning processing unit 10 side to the loading / unloading unit 22 side. Also,
The wafer transfer mechanism 23 can move up and down in the vertical direction (Z direction), and can transfer the wafer W at an arbitrary height position in the carrier C.

On the other hand, in the cleaning processing section 10, the wafer W is
Wafer reversing unit (RVS) 4 that reverses the front and back of the
0 and the interface unit 24, a wafer transfer unit 30 for temporarily mounting the wafer W to transfer the wafer W, and a heating / cooling unit (HP / COL) 50 is provided,
Cleaning unit (SCR) 60a for cleaning the wafer W
60d and all of these wafer reversing unit 40, wafer delivery unit 30, cleaning units 60a to 60d, and heating / cooling unit 50 are arranged so as to be accessible, and the wafer W is delivered between these units or each unit. A main wafer transfer mechanism 70, which is a transfer unit for performing the transfer, is provided.

In this case, the wafer reversing unit 40
Are stacked and arranged in two stages. The wafer reversing unit 40, as shown in FIG. 3, is a wafer holding arm 41 which is a pair of holding means for holding the front and back surfaces of the wafer W.
And a contact / separation moving means 42 for relatively moving the holding arms 41 toward and away from each other, and a motor 43 for rotating the wafer W held by the holding arms 41 in a reversible manner.

Below the wafer reversing unit 40,
Wafer transfer units 30 are arranged in a stack of two stages. Further, the cleaning units 60a to 60d are also stacked and arranged in two stages. In this case, the upper cleaning units 60c and 60d are used for cleaning the surface of the wafer W, and the lower cleaning units 60a and 60b are used.
Are used for cleaning the back surface of the wafer W. Further, the heating / cooling units 50 are arranged so as to be stacked in four stages.

The cleaning processing unit 10 includes an electrical unit (E) for operating and controlling the entire cleaning processing system.
B) 80 and a machine control unit (MB) 90 are arranged,
A chemical liquid storage unit (CTB) 100 that stores a predetermined cleaning liquid to be supplied to the cleaning units 60a to 60d is provided.

Further, on the ceiling of the cleaning processing unit 10, each unit for handling the wafer W and the main wafer transfer mechanism 70.
, A filter for downflowing clean air
A fan unit (FFU) 200 is arranged.

The main wafer transfer mechanism 7 is provided on the side surface of the wafer transfer unit 30 on the main wafer transfer mechanism 70 side.
No. 0 main wafer transfer arm 71 can be inserted, and the first opening 31 is provided so as to capture a part of the downflow from the filter / fan unit 200. Further, in the partition wall 74 that partitions the cleaning processing unit 10 and the interface unit 24, the wafer delivery unit 3
A second opening 32 is formed in a portion corresponding to a boundary between 0 and the interface section 24, and a wafer is transferred between the wafer transfer mechanism 23 and the wafer transfer unit 30 through the second opening 32. Is possible.

A pin 33 protruding upward is provided at an appropriate position on the bottom surface of the wafer transfer unit 30, and, for example, the wafer holding arm 23a of the wafer transfer mechanism 23 holding the wafer W is attached to the pin 33. Then, the wafer W is placed on the pins 33 from the wafer holding arm 23a by moving downward after being moved upward.

The wafer transfer units 30 arranged in the upper and lower two stages can be used by properly selecting them according to the purpose. For example, the lower wafer transfer unit 30
Is transferred from the interface unit 24 to the cleaning processing unit 10, and only unprocessed wafers W that have not been subjected to cleaning processing are placed, and the upper wafer transfer unit 30 is transferred from the cleaning processing unit 10 to the interface unit 24. It can be used so that only the processed wafer W is mounted. In this case, particles or the like attached to the pins 33 from the unprocessed wafer W do not adhere to the wafer W after the cleaning process, and the contamination of the wafer W is reduced, and the wafer W is reduced.
Will be kept clean.

In accordance with the progress of the cleaning process at random, the cleaning process part 10 holds the unprocessed wafer W to be transferred in both stages at one time, and to the interface part 24 in both stages at another time. It can also be used to place the wafer W that has been subjected to the cleaning process and that is to be transferred.
By doing so, throughput can be improved and productivity can be improved.

The main wafer transfer mechanism 70 extends in the Z direction and has a cylindrical support 76 having vertical walls 76a, 76b and a side opening 76c between them, and along the cylindrical support 76 inside thereof. And a wafer carrier 77 that is vertically movable in the Z direction. In this case, the tubular support 76
Can be turned by the rotational driving force of the turning motor 78a, and the wafer carrier 77 is also turned integrally therewith.

In this case, the wafer carrier 77 includes a carrier base 77a and three carrier bases 77a which are movable back and forth along the carrier base 77a and which can pass through the side surface openings 76c of the cylindrical support 76. The main wafer transfer arm 71 is provided. These main wafer transfer arms 71 are configured so that they can move back and forth independently by a motor and a belt mechanism (not shown) built in the transfer base 77a. The wafer transfer body 77 includes a drive pulley 77b mounted on a drive shaft of a lifting motor 78b arranged below the cylindrical support body 76.
And a driven pulley 77 disposed above the cylindrical support 76.
It is connected to a drive belt 77d that is hung on c.
The drive belt 77 is driven by the rotation of the lifting motor 78b.
The wafer carrier 77 is moved up and down by driving d.

As shown in FIG. 3, the main wafer transfer mechanism 70.
A heating / cooling unit 50 is provided on the opposite side of the wafer reversing unit 40 / wafer delivery unit 30 with the wafer sandwiched therebetween. In this heating / cooling unit 50, one cooling unit 52 that performs forced cooling is arranged, and three heating units 51 that perform forced heating / natural cooling are stacked and arranged on this cooling unit 52. There is. An opening / closing window portion 53 is formed on the main wafer transfer mechanism 70 side of each of these units so that the main wafer transfer arm 71 can be inserted and withdrawn.

In the cooling unit 52, for example, a mounting table 55 provided with a plurality of pins 54 for holding the wafer W close to the upper surface and projecting upward,
The wafer W can be uniformly cooled by injecting a cooling gas such as nitrogen gas from below to cool the mounting table 55. On the other hand, the heating unit 51
Holds the proximity wafer W on the upper surface of the hot plate 58 which has the heater 57 built therein and is kept at a predetermined temperature.
The wafer W can be heated uniformly. The heating / cooling unit 50 is mainly used for the drying process of the wafer W in which the front surface or the back surface after scrub cleaning is not completely dried.

Next, the surface cleaning units 60c and 60d (hereinafter referred to as reference numeral 6) constituting the liquid processing apparatus according to the present invention.
(Represented by 0) will be described with reference to FIGS.

First Embodiment The cleaning unit 60 has a container 61 having an opening window 61a into which the main wafer transfer arm 71 of the main wafer transfer mechanism 70 can be inserted and withdrawn, and a processing chamber formed by the container 61. A spin chuck 62, which is a holding means for holding the wafer W rotatably in a horizontal state, disposed inside the wafer 603, and a processing liquid, for example, pure water as a cleaning liquid, toward the surface of the wafer W held by the spin chuck 62 The cleaning liquid supply nozzle 63 (processing liquid supply means) for supplying the cleaning liquid and the cup 67 that surrounds the outer side of the spin chuck 62 and can move up and down.

The spin chuck 62 mounts the wafer W in a horizontal state and holds the wafer W by a holding mechanism 62c, a cylindrical support shaft 62b that supports the wafer W, and a support shaft 62b. It is mainly configured with a motor 62c which is a rotating means for rotating the support shaft 62b, and a part of a static elimination fluid supply means 65 described later is incorporated in a hollow portion of the support shaft 62b in a penetrating state. The motor 62c is formed of, for example, a servo motor, and has a control unit described later, such as the central processing unit 600.
The rotation speed is controlled by a signal programmed by (hereinafter, referred to as CPU 600).

At least the mounting table 62a of the spin chuck 62 is a conductive synthetic resin material, for example, polyetheretherketone (PEEK) containing carbon.
It is made of material. As described above, at least the mounting table 62a is made of a PEEK material mixed with carbon, so that the charge generated by the static elimination fluid is leaked to the region of the wafer W held by the spin chuck 62, thereby eliminating static electricity. The polarity can be controlled even in a portion where the fluid does not hit, and the suppression of the withstand voltage can be further improved. Further, the spin chuck 62 can be made to have corrosion resistance.

The static elimination fluid supply means 65 has a charging polarity (minus electrode) on the surface side of the wafer W generated when the cleaning liquid (pure water) is sprayed (supplied) onto the surface of the rotating wafer W and a negative charging of the electrode. A tubular nozzle 65a made of a material such as quartz or acrylic resin, and a tubular nozzle 6 through a pure water supply pipe 65b.
The pure water supply source 65c is connected to 5a, and the amount of charge can be controlled by a flow rate control means such as a mass flow controller MF1 which is a charging control means provided in the pure water supply pipe 65b. The tip of the tubular nozzle 65a has a substantially inverted conical nozzle head 65d.
Is provided. Further, a supply tube 66a of a pure water pressure-feeding gas, for example, a nitrogen gas (N2 gas), is inserted into the tubular nozzle 65a with a gap provided between the tubular nozzle 65a and the tubular nozzle 65a. In addition, on the outer peripheral side of the tubular nozzle 65a,
A shield member 65 made of a conductive material having a shield function for stabilizing the charging, for example, aluminum.
e is provided. In this case, the support shaft 62b is grounded.

Further, an opening / closing valve V1 is provided in the pure water supply pipe 65b between the mass flow controller MF1 and the pure water supply source 65c. On the other hand, a mass flow controller MF2 and an opening / closing valve V2 are interposed in the N2 gas supply pipe 66b.

The mass flow controllers MF1 and MF2 and the opening / closing valves V1 and V2 configured as described above are provided in the CPU 600.
And is configured to be controlled by a flow rate (charging control) and opening / closing by a signal from the CPU 600.

The cleaning liquid supply nozzle 63 is shown in FIG.
As shown in, it is formed by a two-fluid nozzle. That is, the cleaning liquid supply nozzle 63 has a hollow nozzle head 63d having a discharge port 63a for injecting pure water as a cleaning liquid at the lower end and a connection port 63b of the cleaning liquid supply pipe 63c on the side, and the nozzle head 63d. It is inserted with a gap inside and the discharge port 63A at the tip is the discharge port 63a.
It has a double structure with the N2 gas supply nozzle 63e located in the inner vicinity of the above. A pure water supply source 65c is connected to the cleaning liquid supply pipe 63c via a mass flow controller MF3 and an opening / closing valve V3. Further, the N2 gas supply nozzle 63e is connected to the N2 gas supply source 66c via the N2 gas supply pipe 63f, and the N2 gas supply pipe 66
A mass flow controller MF4 and an opening / closing valve V4 are interposed in b.

In the above description, the pure water supply source 65c and N2
The case where the gas supply source 66c is the same as the cleaning fluid and the static elimination fluid has been described, but a separate system may be used.

In the above description, the case where pure water is used as the cleaning liquid has been described, but instead of pure water, a chemical liquid such as ammonia water / hydrogen peroxide mixed liquid (NH4OH / H2O) is used.
2 / H2O) can be used.

The mass flow controllers MF3 and MF4 and the on-off valves V3 and V4 configured as described above are the CPU 600.
And is configured to be controlled by the flow rate and the opening / closing by a signal from the CPU 600.

As shown in FIG. 4, the cleaning liquid supply nozzle 63 configured as described above can be scanned along the guide 605 in the X direction by the drive mechanism 607, and
It is attached to the tip of a nozzle holding arm 608 that can move up and down in the Z direction. In addition, the cleaning liquid supply nozzle 63
With the height / angle adjusting mechanism 610, the height in the Z direction and the discharge angle of the rinse liquid can be changed.

The driving mechanism 607 is disposed in the driving mechanism disposing chamber 604, and the nozzle holding arm 608 is positioned at the tip end side in the cleaning processing chamber 603 through the window portion 61c provided in the wall portion 61b. It is provided to do. The window portion 61c is for raising and lowering the nozzle holding arm 608 in the Z direction and for the X direction.
It has a predetermined width in the Z direction and is provided along the X direction so as not to hinder scanning in the direction. In this way, the particles generated by the driving mechanism 607 are not generated in the cleaning processing chamber 603.
On the other hand, the cleaning liquid is prevented from splashing from the cup 67 to the drive mechanism installation chamber 604 and adhering to the drive mechanism 607, which hinders the drive of the drive mechanism 607.

On the other hand, the cup 67 is provided on the outer peripheral side of the mounting table 62a.
Be surrounded by. In this case, the cup 67 can be raised and lowered by the raising and lowering mechanism 67A. Note that FIG.
In the figure, the lower and upper positions of the cup 67 are shown. When the wafer W is carried in and out, the cup 67 is positioned at the lower position, and during cleaning, the cup 67 is positioned at the upper position and scattered from the outer periphery of the wafer W to the outside. The cleaning liquid to be guided is guided to the lower part of the inner circumference of the cup 67. It should be noted that the cup 67 is formed with tapered portions 67a at two upper and lower portions, the diameter of which is reduced inward, and the tapered portion 67a has a structure in which the cleaning liquid is less likely to be scattered to the outside. Further, a drain 67b is formed on the bottom portion on the inner peripheral side of the cup 67, so that the exhaust of the cup 67 and the cleaning liquid can be performed.

A plurality of, for example, two rinse nozzles 601 and 602 are arranged near the outside of the cup 67, and the rinse liquid is supplied from these rinse nozzles 601 and 602 to a predetermined position on the surface of the wafer W. It has become so.

In the CPU 600, the type of wafer W to be cleaned and the type of cleaning liquid {for example, pure water or chemical liquid,
Also, the static elimination fluid (pure water) according to what kind of chemical liquid, etc.} and the injection amount (supply amount) of the cleaning liquid
A recipe such as the supply amount of is stored in advance. Therefore, a signal based on the stored recipe is sent from the CPU 600 to the on-off valves V1, V2, V3, V4 and the mass flow controllers MF1, MF2, MF3, MF4 to control the charge amount of the static elimination fluid (pure water). .

The cleaning unit 60 constructed as described above
According to the above, with the spin chuck 62 rotated, the cleaning liquid supply nozzle 63 is moved to the X position above the wafer W from the standby position.
The cleaning process can be performed by scanning in the direction. In this cleaning process, as shown in FIGS. 10 and 11, pure water, which is a cleaning liquid, is sprayed (supplied) on the surface of the wafer W and is dispersed, so that the front surface of the wafer W is charged and the front surface of the wafer W is charged. Negative residual charge is accumulated in.
To prevent this phenomenon, during the cleaning process, the open / close valves V1 and V2 are opened and pure water is supplied to the center of the back surface of the wafer W through the tubular nozzle 65a. It is negatively charged by frictional contact with the tubular nozzle 65a, and is jetted (supplied) to the back surface side of the wafer W. As a result, since the wafer W is charged with a negative charge, it is possible to prevent the surface side of the wafer W from being negatively charged due to the repulsive action. At this time, the CPU 60
A signal based on a recipe stored in advance from 0
1, V2, V3, V4 and mass flow controller MF1,
By transmitting to MF2, MF3, and MF4, the charge amount of the static elimination fluid (pure water) is controlled.

Next, the process of cleaning the wafer W in the cleaning system will be described. First, the carrier C in which a predetermined number of wafers W are accommodated is moved from the loading / unloading port of the wafer W to the interface section 24 side,
It is placed at a predetermined position on the placing table 21. Window opening / closing mechanism 27
Thus, when the window 26 is opened and the lid is attached to the carry-in / out port, the lid Ca is opened to communicate the inside of the carrier C with the interface 24.
Further, by using a mapping sensor, the wafer W in the carrier C is
Check the accommodation status of. When there is an abnormality in the accommodation state of the wafer W, the processing process is interrupted and, for example, the processing operation of another carrier C is started.

When there is no abnormality in the accommodation state of the wafer W, the wafer transfer mechanism 23 is set at a predetermined height position in the carrier C.
Wafer holding arm 23a is inserted, and one wafer W
Take out. The wafer W thus held by the wafer holding arm 23a is transferred to the lower wafer delivery unit 30 and placed at a predetermined position in the wafer delivery unit 30. At this time, the surface of the wafer W is the upper surface. After that, the wafer transfer mechanism 23 continues the work such as taking out another wafer W.

On the other hand, one of the main wafer transfer arms 71 of the main wafer transfer mechanism 70, for example, the uppermost main wafer transfer arm 71 is inserted into the lower wafer transfer unit 30 on which the wafer W is placed and the wafer is transferred. Take out W. Wafer W
Is the main wafer transfer arm 7 with its surface facing upward.
1 is held, the wafer W is processed according to the processing recipe.
Is conveyed to either one of the upper cleaning units 60c and 60d.

For example, if the cleaning unit 60c is used, the opening / closing window 65 is opened with the cup 67 in the lower position, the main wafer transfer arm 71 is inserted to the position of the spin chuck 62, and the wafer is placed on the spin chuck. Place and hold W. Then, the main wafer transfer arm 71 is withdrawn from the cleaning unit 60c and the opening / closing window 65 is closed.

In the cleaning unit 60c, the nozzle holding arm 608 is moved into the cup 67, and the cleaning water supplied from the cleaning liquid supply nozzle 63 is discharged toward the upper surface of the rotating wafer W while the nozzle holding arm 60 is being discharged.
A cleaning process of scanning 8 in the X direction is performed. In this cleaning process step, as described above, the pure water, which is the cleaning liquid, is sprayed (supplied) on the surface of the wafer W and is dispersed, so that the surface side of the wafer W is charged and a negative residual charge is generated on the surface side of the wafer W. Accumulated. Therefore, in order to prevent this phenomenon, if the open / close valves V1 and V2 are opened and pure water is supplied to the center of the back surface of the wafer W through the tubular nozzle 65a during the cleaning process, the pure water for static elimination will be negative. It is negatively charged by frictional contact with the tubular nozzle 65a which is a charging material,
It is jetted (supplied) to the back surface side of the wafer W. At least during the cleaning process, it is sufficient that the deionized pure water is continuously supplied to the back surface of the wafer W. However, before the deionized pure water is jetted (supplied) to the wafer W front surface, Pure water may be supplied to the back surface of the wafer W.

By supplying the deionized pure water to the back surface of the wafer W as described above, since the wafer W has a negative charge, it is possible to prevent the front surface side of the wafer W from being negatively charged by the repulsive action. it can. At this time, CP
A signal based on a recipe stored in advance from U600 is used to open / close valves V1, V2, V3, V4 and mass flow controller MF.
The charge amount of the static elimination fluid (pure water) is controlled by being transmitted to 1, MF2, MF3, and MF4. Therefore, it is possible to prevent the devices formed on the surface of the wafer W from being destroyed and also to prevent particles or the like from reattaching.

In this way, after the cleaning process is completed, the nozzle holding arm 608 is made to stand by outside the cup 67, and the wafer W is rotated at a predetermined rotation speed.
Spin drying is performed to shake off the cleaning liquid adhering to the wafer W. During this drying process as well, when pure water is supplied to the central portion of the back surface of the wafer W through the tubular nozzle 65a, as in the cleaning process, the pure water for static elimination is discharged to the tubular nozzle 65a which is a negative charging material. It is negatively charged by frictional contact and is jetted (supplied) to the back surface side of the wafer W. Thereby, it is possible to further suppress the surface side of the wafer W from being negatively charged. Therefore, even during the drying process, it is possible to prevent the devices formed on the surface of the wafer W from being destroyed, and to prevent particles and the like from reattaching.

Before drying, the rinse nozzle 601,
It is desirable to supply a predetermined rinse liquid from 602 to the surface of the rotating wafer W to perform the rinse process on the wafer W.

After spin drying, the cup 67 is lowered,
Further, the holding mechanism 62c of the spin chuck 62 is released. Then, the opening / closing window 65 is opened, the main wafer transfer arm 71 is inserted, and the wafer W is transferred to the main wafer transfer arm 71. The wafer W carried out from the cleaning unit 60c for surface cleaning in this way is carried into the hot plate unit 52 of any one of the three units and dried as necessary, and the wafer W is dried as needed. The wafer is transferred to the cooling unit 52 by the wafer transfer arm 71, cooled, and returned to the main wafer transfer arm 71 again.

The wafer W whose surface has been cleaned is transferred to the wafer reversing unit 40 and reversed by the reversing mechanism provided in the wafer reversing unit 40. After that, the wafer W is transferred to the cleaning units 60a and 60b for cleaning the back surface and the back surface cleaning is performed.

In this way, the front and back surfaces of the wafer W that have been cleaned and dried are in a state in which the back surface is the top surface. Therefore, in order to return to the carrier C, the front surface of the wafer W becomes the top surface. It is necessary to perform the reversal process. Therefore, next, the wafer W is, for example, the main wafer transfer arm 7
1 is transferred to the upper wafer reversing unit 40. In the upper wafer inverting unit, the wafer W is vertically inverted by the same operation as the inverting operation in the lower wafer inverting unit 40 described above. In this manner, the wafer W is returned to the main wafer transfer arm 71, for example, with the surface thereof facing upward.

The main wafer transfer arm 7 with its surface facing upward
The wafer W held by No. 1 is transferred to the upper wafer transfer unit 30a, and this wafer transfer unit 30a is further transferred.
After all the wafers W accommodated in the carrier C have been transferred from the inside to the interface section 24 by the wafer holding arm 23a, the carriers C accommodated in the wafer W are sent to the next step. To be

Second Embodiment FIG. 7 is a schematic sectional view showing a second embodiment of the liquid processing apparatus according to the present invention.

The second embodiment is a case in which the destaticizing fluid in the destaticizing fluid supply means 65 can be more easily charged with pure water. That is, the tubular nozzle 6
5a is formed by a plurality of, for example, four tubular nozzle tubes 65d to increase the frictional resistance between the tubular nozzles 65a (specifically, the tubular nozzle tubes 65d) and pure water which is a fluid for static elimination, thereby increasing the charge amount. This is the case when it is possible to increase. In this case, the plurality of tubular nozzle tubes 65d are
N2 gas supply tubes 66a are arranged concentrically inside the shield member 65e, and N2 gas supply tubes 66a are arranged at the center of these tubular nozzle tubes 65d.

Since the other parts of the second embodiment are the same as those of the first embodiment, the same parts are designated by the same reference numerals and the description thereof will be omitted.

Third Embodiment FIG. 8 is a schematic sectional view showing a third embodiment of the liquid processing apparatus according to the present invention.

In the first and second embodiments, the case where the spin chuck 62 is a mechanical type has been described, but in the third embodiment, the vacuum chuck type spin chuck 6 is used.
2A is used.

In the third embodiment, the spin chuck 6
2A mounts the wafer W in a horizontal state, and mounts 62d that holds the wafer W by suction from a vacuum device (not shown) and a support shaft 62 that supports the mount 62d.
e and a motor 62f which is a rotating means for rotating the support shaft 62e. In this case, the motor 62f is formed of, for example, a servo motor, and is configured such that the rotation speed is controlled by a signal programmed by the CPU 600 which is the control means.

At least the mounting table 62 of the spin chuck 62A is a conductive synthetic resin material such as polyetheretherketone (PEEK) containing carbon.
It is made of material. Thus, by forming at least the mounting table 62d from the PEEK material containing carbon, it is possible to leak the charges generated in the static elimination fluid. As a result, the back surface of the central portion of the wafer W, which is not hit by the static elimination fluid, can also be charged, and the polarity can be controlled even in the central portion on the non-processing surface side. Further, the spin chuck 62A can be provided with corrosion resistance. The conductivity resistivity is, for example, 10 ⁵ to 10 ⁹ Ω.
It is preferable to select between cm.

The static elimination fluid supply means 65B includes a tubular nozzle 65e disposed below the mounting table 62d of the spin chuck 62A, and a tubular nozzle 6 via a pure water supply pipe 65b.
A pure water supply source 65c connected to 5e, and the amount of charge can be controlled by a flow rate control means such as a mass flow controller MF1 which is a charging control means provided in the pure water supply pipe 65b. The tubular nozzle 65e is a negative charging material having the same polarity as the charging polarity (negative polarity) on the surface side of the wafer W generated when the cleaning liquid (pure water) is sprayed (supplied) onto the surface of the rotating wafer W, such as quartz. It is even more effective if it is made of acrylic resin.

Since the other parts of the third embodiment are the same as those of the first embodiment, the same parts are designated by the same reference numerals and the description thereof will be omitted.

Fourth Embodiment FIG. 9 is a schematic sectional view showing a fourth embodiment of the liquid processing apparatus according to the present invention.

The fourth embodiment is a case where an ionized inert gas such as nitrogen gas (N 2 gas) is used as the static elimination fluid.

In the fourth embodiment, the static elimination fluid supply means 6
5A is a tubular N2 gas supply nozzle 68a (inert gas supply nozzle) made of an insulating material which is inserted into the spin chuck 62 and an N2 gas supply nozzle 68 through a supply pipe 68b.
N2 gas supply source 68c (inert gas supply source) connected to a, and a controllable ion generating means that is interposed in the supply pipe 68b and ionizes the same polarity as the charging polarity (minus) on the surface side of the wafer W. And 69. A mass flow controller MF5 and an opening / closing valve V5 are provided in the supply pipe 68b. Also, the N2 gas supply source 68c
And the N2 gas supply pipe 63f of the cleaning liquid supply nozzle 63
Are connected. In addition, in the fourth embodiment, the mounting table 62a of the spin chuck 62 does not necessarily need to be conductive, and may be an insulating synthetic resin member.

The ion generating means 69 is, for example, an emitter bar (not shown) and a plurality of electrodes (not shown) protruding from the lower surface of the emitter bar at appropriate intervals along the length direction of the emitter bar. The controller 69a having a DC power supply generates ions of a predetermined electrode (minus) and amount. The controller 69a is electrically connected to the CPU 600 and configured to ionize a predetermined amount of N2 gas according to a control signal from the CPU 600.

In the above description, the ion generating means 69
The case of controlling the ionization amount of the N2 gas, which is the static elimination fluid, by controlling the controller 69a of FIG. 9 has been described. However, as shown by the chain double-dashed line in FIG. May be connected to each other by controlling the mass flow controller MF5 and the on-off valve V5 to control the ionization amount of the N2 gas. Of course, by controlling the controller 69a, the mass flow controller MF5 and the on-off valve V5,
You may make it control the ionization amount of N2 gas which is the fluid for static elimination.

According to the static elimination fluid supplying means 65A of the fourth embodiment configured as described above, in the cleaning process, as described above, pure water as the cleaning liquid is jetted (supplied) onto the surface of the wafer W. Then, the front surface side of the wafer W is charged by being dispersed and negative residual charges are accumulated on the front surface side of the wafer W. In order to prevent this phenomenon, when the opening / closing valve V5 is opened and the ion generating means 69 is operated during the cleaning process, the N2 gas supplied from the N2 gas supply source 68c is negatively ionized by the ion generating means 69. Then, the N2 gas supply nozzle 68a ejects (supplies) the central portion of the back surface of the wafer W. As a result, since the wafer W is charged with a negative charge, it is possible to prevent the surface side of the wafer W from being negatively charged due to the repulsive action. At this time, the signal based on the recipe stored in advance from the CPU 600 is transmitted to the controller 69a and the on-off valve V5 or the mass flow controller MF5 to control the charge amount of the N2 gas as the static elimination fluid. Therefore, it is possible to prevent the devices formed on the surface of the wafer W from being destroyed and also to prevent foreign substances such as particles from adhering.

Since the other parts of the fourth embodiment are the same as those of the first embodiment, the same parts are designated by the same reference numerals and the description thereof will be omitted.

Other Embodiments (1) In the above embodiment, the case where the cleaning liquid, for example, pure water is sprayed from the cleaning liquid supply nozzle 63 to perform the cleaning process has been described. The same can be applied to scrubber cleaning in which cleaning processing is performed by contacting the wafer W.

(2) In the above embodiment, the case where the liquid processing apparatus according to the present invention is applied to the wafer cleaning processing system has been described. However, the liquid processing apparatus according to the present invention is not necessarily applied only to the semiconductor wafer cleaning processing. However, it can be applied to, for example, a cleaning process of an LCD substrate or a CD substrate.

[0095]

As described above, according to the present invention, since it is configured as described above, the following excellent effects can be obtained.

(1) According to the first, second, seventh and eighth aspects of the present invention, when the processing liquid is supplied to the surface of the rotating substrate to be processed, the rotating substrate is electrically charged. Since the static elimination fluid is supplied, it is possible to suppress the charge generated on the substrate to be processed during the processing step during the liquid processing. Therefore, it is possible to prevent the device formed on the substrate to be destroyed from being destroyed and to remove the adhesion of foreign matter. Further, by forming the charge amount of the static elimination fluid so as to be controllable, it is possible to eliminate the charge corresponding to different charge amounts of the substrate to be processed, and it is possible to control the interface potential during the process. In this case, the charge amount of the static elimination fluid is controlled based on the material of the substrate to be processed, the rotation speed of the substrate to be processed, the supply amount of the processing liquid, etc., so that the material of the substrate to be processed and the rotation of the substrate to be processed are controlled. The charge can be removed according to the different charge amount depending on the number, the supply amount of the treatment liquid, and the like (claim 6).

(2) According to the second aspect of the present invention, during the processing step and the drying step, the static elimination fluid charged to the rotating substrate to be processed is supplied. In addition, it is possible to suppress the charge generated on the substrate to be processed during the drying process and to control the interface potential during the process.

(3) According to the third aspect of the invention, the charge removal fluid is made to have the same charge polarity as the charge charged on the surface side of the substrate to be processed, so that the object to be processed is repulsed. It is possible to further suppress the charging of the substrate.

(4) According to the inventions of claims 4 and 9,
The static elimination fluid is made of pure water, and the pure water is passed through a tubular nozzle made of a charging material having the same polarity as the surface of the substrate to be processed, and the pure water is charged by the frictional force at that time. Since the amount of charge can be controlled by controlling the supply flow rate of, the charge of the substrate to be processed can be suppressed using pure water, and the substrate to be processed can be cleaned. Further, for example, when pure water is used as the processing liquid in the cleaning process, the same pure water supply source can be used, so that the piping system can be simplified and the device can be downsized, and the cost can be reduced. Can be achieved.

(5) According to the fifth, tenth and eleventh aspects of the present invention, the static elimination fluid is formed of an inert gas, and the inert gas is ionized by the ion generating means, and at the same time, the inert gas Since the charge amount of the inert gas can be controlled by adjusting the supply amount and / or the ionization amount, the charge of the substrate to be processed can be suppressed by using the inert gas, and particles and the like can be reattached. Can be prevented.

(6) According to the twelfth aspect of the invention, the injection port of the static elimination fluid supply means is provided on the side of the central surface of the holding means for holding the substrate to be processed. It is possible to efficiently suppress the charging of the central portion.

(7) According to the thirteenth aspect of the present invention, when pure water is used as the static elimination fluid, the holding means is
Since it is formed of a synthetic resin material having electrical conductivity, the charge generated in the static elimination fluid is leaked to the region of the substrate to be processed, which is held by the holding means, so that even in the portion where the static elimination fluid does not hit The control becomes possible, and the suppression of charging can be further improved. In addition, since the holding means can be provided with corrosion resistance, the life of the holding means and thus the device can be improved.

[Brief description of drawings]

FIG. 1 is a schematic plan view showing a semiconductor wafer cleaning processing system to which a liquid processing apparatus according to the present invention is applied.

FIG. 2 is a side view of FIG.

FIG. 3 is a schematic cross-sectional view showing an inversion unit, a substrate transfer unit, and a processing unit in the semiconductor wafer cleaning processing system.

FIG. 4 is a schematic plan view showing a liquid processing apparatus according to the present invention.

FIG. 5 is a schematic cross-sectional view (a) showing the liquid processing apparatus according to the present invention and an enlarged cross-sectional view (b) of a portion I in (a).

FIG. 6 is a schematic sectional view (a) showing a first embodiment of the liquid processing apparatus according to the present invention and a sectional view (b) taken along line II-II of (a).

FIG. 7 is a schematic cross-sectional view (a) showing a second embodiment of the liquid processing apparatus according to the present invention and a cross-sectional view (b) taken along line III-III of (a).

FIG. 8 is a schematic cross-sectional view showing a third embodiment of the liquid processing apparatus according to the present invention.

FIG. 9 is a schematic cross-sectional view showing a fourth embodiment of the liquid processing apparatus according to the present invention.

FIG. 10 is an explanatory diagram (a) and a graph (b) showing the relationship between the flow of pure water and the residual charge.

FIG. 11 is an enlarged cross-sectional view showing carrier diffusion and charged state due to Coulomb force.

[Explanation of symbols]

60 cleaning unit (liquid processing device) 62 spin chuck (holding means) 62a, 62d mounting tables 62c, 62f motor (rotating means) 63 cleaning liquid supply nozzle (cleaning liquid supply means) 65, 65A, 65B static elimination fluid supply means 65a, 65e Tubular nozzle 65b Supply pipe 65c Pure water supply source 65d Tubular nozzle tube 68a N2 gas supply nozzle (inert gas supply nozzle) 68b Supply pipe 68c N2 gas supply source (inert gas supply source) 69 Ion generating means 69a Controller 600 CPU ( Control means) MF1 to MF5 Mass flow controller (charging control means) V1 to V5 Open / close valve W Semiconductor wafer (substrate to be processed)

Front page continued (51) Int.Cl. ⁷ Identification code FI theme code (reference) H05F 3/04 H05F 3/04 DF term (reference) 3B201 AA02 AA03 AB01 AB23 AB27 AB34 AB42 BB22 BB92 BB93 BC01 CC01 CD33 5G067 AA42 DA01 DA18

Claims (13)

[Claims] 1. A step of supplying a treatment liquid to a surface of a rotating substrate to be treated, and a step of supplying a charged static elimination fluid to the substrate to be treated during the treatment step. And a step of removing electric charges that are charged on the surface side of the substrate to be processed at the same time, and the amount of electrostatic charge of the fluid is controllable. 2. A step of supplying a treatment liquid to a surface of a rotating substrate to be treated, a drying step of rotating the substrate to remove the treatment liquid adhering to the substrate, During the processing step and the drying step, a step of supplying a charged static elimination fluid to the substrate to be processed to remove electric charges charged on the surface side of the substrate to be processed during the processing step, and A liquid treatment method, wherein the charge amount of the fluid is formed so as to be controllable. 3. The liquid processing method according to claim 1, wherein the charge removing fluid has the same charge polarity as the charge of the surface side of the substrate to be processed. Processing method. 4. The liquid processing method according to claim 1, wherein the static elimination fluid is formed of pure water, and the pure water is charged with the same polarity as the charging polarity on the surface side of the substrate to be processed. A liquid treatment method characterized in that the amount of electrification is controllable by passing through a tubular nozzle made of a material and being charged by frictional force at that time, and controlling the supply flow rate of pure water. 5. The liquid treatment method according to claim 1, wherein the static elimination fluid is formed of an inert gas, the inert gas is ionized by an ion generating means, and the inert gas is inert. A liquid processing method characterized in that the charge amount of an inert gas can be controlled by adjusting the gas supply amount and / or the ionization amount. 6. The liquid treatment method according to claim 1, wherein the charge amount of the static elimination fluid is controlled by the material of the substrate to be treated,
A liquid processing method, which is performed based on the number of rotations of the substrate to be processed, the supply amount of the processing liquid, and the like. 7. The liquid processing method according to claim 1, wherein the static elimination fluid is supplied to the central portion on the back surface side of the substrate to be processed. 8. A holding means for rotatably holding the substrate to be processed, a rotating means for rotatably rotating the holding means, and a processing liquid supplied to the surface of the substrate to be processed held by the holding means. Processing liquid supply means for removing the electric charges charged on the surface side of the substrate to be processed, and a discharging fluid supply means for supplying a charged discharging fluid to the substrate to be processed; And a charge control means for controlling the charge amount of the liquid treatment apparatus. 9. The liquid processing apparatus according to claim 8, wherein the static elimination fluid supply means is provided with a tubular nozzle made of a charging material having the same polarity as the charging polarity on the surface side of the substrate to be processed, and a tubular shape through a supply pipe. A liquid processing apparatus comprising a pure water supply source connected to a nozzle, wherein the charging control means is formed by a flow rate control means provided in the supply pipe. 10. The liquid processing apparatus according to claim 8, wherein the static elimination fluid supply means is an inert gas supply nozzle.
An inert gas supply source connected to the inert gas supply nozzle through a supply pipe, and a controllable ion generation that is interposed in the supply pipe and ionizes to the same polarity as the charging polarity on the surface side of the substrate to be processed. And a liquid processing apparatus. 11. The liquid processing apparatus according to claim 8, wherein the static elimination fluid supply means is an inert gas supply nozzle.
An inert gas supply source connected to the inert gas supply nozzle through a supply pipe, and an ion generating means interposed in the supply pipe and ionized to have the same polarity as the charging polarity on the surface side of the substrate to be processed. A liquid processing apparatus, characterized in that the charging control means is formed by a flow rate control means provided in the supply pipe. 12. The liquid processing apparatus according to any one of claims 8 to 11, wherein the injection port of the current removing body supply means is provided on the surface of the substrate to be processed holding surface at the center of the holding means. Liquid processing equipment. 13. The liquid processing apparatus according to claim 9, wherein the holding means is made of a conductive synthetic resin material.