JP6603654B2 - フィルムスタック上にハードマスクを形成するための方法 - Google Patents
フィルムスタック上にハードマスクを形成するための方法Info
- Publication number
- JP6603654B2 JP6603654B2 JP2016512971A JP2016512971A JP6603654B2 JP 6603654 B2 JP6603654 B2 JP 6603654B2 JP 2016512971 A JP2016512971 A JP 2016512971A JP 2016512971 A JP2016512971 A JP 2016512971A JP 6603654 B2 JP6603654 B2 JP 6603654B2
- Authority
- JP
- Japan
- Prior art keywords
- photoresist layer
- layer
- sputtered material
- hard mask
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052739 hydrogen Inorganic materials 0.000 claims description 23
- 239000001257 hydrogen Substances 0.000 claims description 22
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 238000004544 sputter deposition Methods 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 9
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- 229910052786 argon Inorganic materials 0.000 claims description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
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- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 2
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- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 229910052782 aluminium Inorganic materials 0.000 description 2
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- 150000002739 metals Chemical class 0.000 description 2
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
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Description
回路密度が次世代デバイスのために増加するにつれて、バイア、トレンチ、接点、デバイス、ゲートおよび他の特徴、ならびにそれらの間の誘電体材料などの相互接続の幅またはピッチは、45nmおよび32nmの寸法に減少している。デバイススケーリングがリソグラフィスキャナの解像度限界のさらに下へと拡張されるにつれて、今日の集積デバイスの特徴密度要件への合致を可能にするために、マルチパターン形成が採用された。マルチパターン形成は、複数のステップで最終的にフィルム層をパターン形成するため、いくつかのレジストコーティング、リソグラフィ的なパターン形成、およびエッチング操作を実施するプロセスである。これらが組み合わされると、パターン操作を重ね合わせることによって、特徴を下にあるハードマスク層に形成し、これは、完全にパターン形成されたときに、下にある層をパターン形成するため、または注入または拡散マスクとしての機能を果たすために使用することができる。
解像度、焦点深度、およびリソグラフィの欠陥敏感性の点で、マルチパターン形成の利点が理解される一方で、プロセスの予算を制御し、歩留まりを増加および維持するさらなる要望がある。
いくつかの実施形態では、ハードウェアは、具体的に求められるレジストに対する、光学的に一致した、SiOxNyCz:Hw層の形成を可能にするように構成される。SiOxNyCz:Hwフィルムの屈折率(n)および吸光係数(K)は、層をエッチングするために使用されるレジストに対するフィルムの光学特性に一致するように、ガス流およびその結果のフィルムのw、x、y、およびz値を調節することにより調整可能である。
本明細書の実施形態の上述の特徴が達成される様式を詳細に理解することができるように、添付図面に図示される本発明の実施形態を参照することによって、上に簡単に要約された、本発明のより詳細な記載が分かることができる。
しかし、他の同様に有効な実施形態を本発明が容認することができるので、添付の図面は、単に例示的な実施形態を図示しており、したがってその範囲を限定すると考えるべきでないことに留意されたい。
第2のスナップショット120では、エッチングプロセスが実施され、第2の光学的平坦化層106および記憶層105を通して第1の特徴125をエッチングする。エッチングプロセス期間中に、フォトレジスト108は、少なくとも部分的にエッチング除去され、シリコン反射防止層107、第2の光学的平坦化層106および記憶層105の露光された部分がエッチングされる。
アッシング媒体としてリモートで形成されたH2/N2プラズマ605の効果の3つの図式表現は、グラフ610では、層にわたる記憶の厚さ、グラフ620では、層にわたる記憶層の屈折率、グラフ630では、層にわたる記憶層の吸光係数を描き、図5と同じ様式である。厚さ、屈折率、および吸光係数は、グラフ610から630について、y軸上にプロットされる。x軸に沿ってプロットされるのは、基板の中心から外側の縁への同心円に沿って配置されたサンプル位置における、49個の測定値である。測定は、アッシング前606およびアッシング後607に行われた。グラフ610に示されるように、記憶層の厚さは、アッシング前606からアッシング後607で実質的に変化しない。グラフ620に示されるように、記憶層の屈折率は、アッシング前606からアッシング後607で実質的に変化しない。また、グラフ630に示されるように、記憶層の吸光係数は、アッシング前606からアッシング後607で実質的に変化しない。
図3は、スパッタ堆積する材料にとって好適な、例示的な物理的気相堆積(PVD)プロセスチャンバ300(例えば、スパッタプロセスチャンバ)を図示する。SiOxNyCzフィルム層を形成するのに適合することができるプロセスチャンバの1つの例は、カリフォルニア州Santa Claraにある、Applied Materials、Inc.から入手可能な、PVDプロセスチャンバである。他の製造業者からのものを含む他のスパッタプロセスチャンバを、本発明を実施するように適合できることが意図される。
チャンバリッドアセンブリ304は、チャンバ本体308の頂部上に取り付けられる。チャンバ本体308は、アルミニウムまたは他の好適な材料から製造することができる。基板アクセスポート330は、チャンバ本体308の側壁310を貫通して形成され、プロセスチャンバ300の中へ、またプロセスチャンバ300から外へ基板390を移送するのを容易にする。アクセスポート330は、基板処理システムの移送チャンバおよび/または他のチャンバに結合することができる。
リッドアセンブリ304は、一般的に、ターゲット320およびそこに結合される接地シールドアセンブリ326を含む。ターゲット320は、PVDプロセス期間中に基板390の表面上にスパッタおよび堆積され得る材料源を提供する。ターゲット320は、DCスパッタ期間中にプラズマ回路のカソードとしての役割を果たす。
基板支持体338は、静電チャックであって、電極380を有することができる。静電チャック(ESC)338は、反対の電荷の引力を使用して、リソグラフィプロセスのために絶縁性と導電性の基板390の両方を保持し、DC電力供給装置381によって電力供給される。ESC338は、誘電体本体内に埋め込まれた電極を備える。DC電力供給装置381は、電極に約200から約2000ボルトの、DCチャック電圧を提供することができる。DC電力供給装置381は、基板390をチャックしたりチャックを離したりするため電極にDC電流を向けることによって電極380の動作を制御するためのシステムコントローラを含むこともできる。
本開示の記載は、ハードマスクの屈折率(n)および吸光係数(K)をフォトレジストに一致させるための方法に関するが、これらの特性を一致させるための同じ手段は、他の材料層に同様に適用することができる。例えば、一致する材料を堆積することは、ARCフィルム、パッシベーションフィルムまたは緩衝フィルムとしての使用が考えられる。PVDフィルムは、それらの高純度、高密度、および低温堆積の機能のために差別化される。この発明を使用することによって、現在使用するパターン形成材料およびフィルムスタックを変えることができる。こうして、ハードマスクを形成するための方法は、リソグラフィ操作を受ける様々な層および材料に適用することができる。
Claims (23)
- フィルムスタック上にハードマスクを形成するための方法であって、
チャンバの中に配設されたターゲットからシリコンを含む材料を基板の表面上にスパッタするステップと、
前記ターゲットから前記材料をスパッタするステップの間、プロセスガスの流れを送達するステップであって、前記プロセスガスが酸素、水素および窒素を含むステップと
を含み、
前記スパッタされた材料の光学特性が、前記スパッタされた材料の表面上に配設されることになるフォトレジスト層の光学特性と、意図されるリソグラフィ露光波長において実質的に等価な値を持つように、前記プロセスガス中の酸素と窒素の比が調節される、方法。 - 前記プロセスガスが炭素をさらに含む、請求項1に記載の方法。
- 前記意図されるリソグラフィ露光波長における前記光学特性が、パターンアライメント波長における前記光学特性と異なる、屈折率および吸光係数の両方を含む、請求項1に記載の方法。
- 前記スパッタされた材料がシリコン、窒素、酸素、および水素を含み、前記スパッタされた材料の前記表面における水素の濃度が、前記スパッタされた材料の厚さにわたる平均水素濃度よりも低く、または前記スパッタされた材料の前記表面における窒素の濃度が、前記スパッタされた材料の前記厚さにわたる平均窒素濃度よりも低い、請求項1に記載の方法。
- フィルムスタック上にハードマスクを形成するための方法であって、
チャンバの中に配設されたターゲットからシリコンを含む材料を基板の表面上にスパッタするステップと、
前記ターゲットから前記材料をスパッタするステップの間、プロセスガスの流れを送達するステップであって、前記プロセスガスが酸素および窒素を含むステップと
を含み、
前記スパッタされた材料の光学特性が、前記スパッタされた材料の表面上に配設されることになるフォトレジスト層の光学特性と、意図されるリソグラフィ露光波長において実質的に等価な値を持つように、前記プロセスガス中の酸素と窒素の比が調節され、
第1のガスをイオン化するために、前記基板の前記表面の上方にプラズマを生成するステップと、次いで、
前記イオン化された第1のガスに前記基板の前記表面に衝撃を加えさせるように前記チャンバの部分に結合される電極にバイアスをかけるステップであって、前記電極にバイアスをかけるステップが前記材料にスパッタするステップの後に実施されるステップと
をさらに含む方法。 - 前記スパッタされた材料の前記表面上に直接前記フォトレジスト層を堆積するステップをさらに含み、前記光学特性が屈折率および吸光係数の両方を含み、前記堆積されたフォトレジスト層が、193nmの波長において、1.5と2.5の間の屈折率および0と0.3の間の吸光係数の両方を含む、請求項1に記載の方法。
- 前記スパッタされた材料の前記表面上に直接前記フォトレジスト層を堆積するステップであって、前記フォトレジスト層が第1のフォトレジスト層を備えるステップと、
前記第1のフォトレジスト層を使用して前記スパッタされた材料をパターン形成するステップと、
前記パターン形成されたスパッタされた材料の表面上に直接第2のフォトレジスト層を堆積するステップであって、前記第2のフォトレジスト層の光学特性が、前記第2のフォトレジスト層のリソグラフィ露光波長において、前記パターン形成されたスパッタされた材料の前記光学特性と実質的に等価な値を有するステップと、
前記第2のフォトレジスト層を使用して前記スパッタされた材料をパターン形成するステップと
をさらに含む、請求項1に記載の方法。 - 前記スパッタされた材料の前記表面上に直接前記フォトレジスト層を堆積するステップと、
前記フォトレジスト層の中にパターンを形成するため、前記フォトレジスト層上でリソグラフィ操作を実施するステップと、
前記スパッタされた材料中の前記形成されたパターンをエッチングするステップと、
前記フォトレジスト層を取り除くステップであって、前記フォトレジスト層を取り除くステップが、リモートO2プラズマまたはリモートH2/N2プラズマを使用して前記フォトレジスト層をアッシングするステップを含むステップと
をさらに含む、請求項1に記載の方法。 - フィルムスタック上にハードマスクを形成するための方法であって、
チャンバの中に配設されたターゲットからシリコンを含む材料を基板の表面上にスパッタするステップと、
前記ターゲットから前記材料をスパッタするステップの間、プロセスガスの流れを送達するステップであって、前記プロセスガスが酸素および窒素を含むステップと
を含み、
前記スパッタされた材料の光学特性が、前記スパッタされた材料の表面上に配設されることになるフォトレジスト層の光学特性と、意図されるリソグラフィ露光波長において実質的に等価な値を持つように、前記プロセスガス中の酸素と窒素の比が調節され、更に、 前記スパッタされた材料の前記表面上に直接前記フォトレジスト層を堆積するステップを含む方法。 - 前記スパッタされた材料及び前記フォトレジスト層は、意図されるリソグラフィ露光波長において等価な屈折率及び等価な吸光係数の両方を有する請求項9に記載の方法。
- フィルムスタック上にハードマスクを形成するための方法であって、
チャンバの中に配設されたターゲットからシリコンを含む材料を基板の表面上にスパッタするステップと、
前記ターゲットから前記材料をスパッタするステップの間、プロセスガスの流れを送達するステップであって、前記プロセスガスが酸素および窒素を含むステップと
を含み、
前記スパッタされた材料の光学特性が、前記スパッタされた材料の表面上に配設されることになるフォトレジスト層の光学特性と、意図されるリソグラフィ露光波長において実質的に等価な値を持つように、前記プロセスガス中の酸素と窒素の比が調節される方法。 - 前記光学特性は、屈折率及び吸収係数を含む請求項11に記載の方法。
- 前記露光波長は、193nmである請求項12に記載の方法。
- 前記プロセスガスは、炭素をさらに含んでいる請求項11に記載の方法。
- 前記スパッタされた材料の前記光学特性が、前記フォトレジスト層の前記光学特性とパターンアライメント波長において実質的に異なる請求項12に記載の方法。
- 前記スパッタされた材料が、シリコン、窒素、酸素、および水素を含み、前記スパッタされた材料の前記表面における水素の濃度が、前記スパッタされた材料の厚さにわたる平均水素濃度よりも低く、または前記スパッタされた材料の前記表面における窒素の濃度が、前記スパッタされた材料の前記厚さにわたる平均窒素濃度よりも低い、請求項11に記載の方法。
- 前記基板の前記表面の疎水性を増大させるために前記チャンバの部分に結合される電極にバイアスをかけるステップを更に備えた請求項11に記載の方法。
- 前記スパッタされた材料の前記表面上に直接前記フォトレジスト層を堆積するステップをさらに含む請求項11に記載の方法。
- 前記光学特性が屈折率および吸光係数の両方を含み、前記堆積されたフォトレジスト層が、193nmの波長において、1.5と2.5の間の屈折率および0と0.3の間の吸光係数の両方を含む、請求項18に記載の方法。
- 前記スパッタされた材料の前記表面上に直接前記フォトレジスト層を堆積するステップであって、前記フォトレジスト層が第1のフォトレジスト層を備えるステップと、
前記第1のフォトレジスト層を使用して前記スパッタされた材料をパターン形成するステップと、
前記パターン形成されたスパッタされた材料の表面上に直接第2のフォトレジスト層を堆積するステップであって、前記第2のフォトレジスト層の光学特性が、前記第2のフォトレジスト層のリソグラフィ露光波長において、前記パターン形成されたスパッタされた材料の前記光学特性と実質的に等価な値を有するステップと、
前記第2のフォトレジストを使用して前記スパッタされた材料をパターン形成するステップと
をさらに含む請求項11に記載の方法。 - 前記スパッタされた材料の前記表面上に直接前記フォトレジスト層を堆積するステップと、
前記フォトレジスト層の中にパターンを形成するため、前記フォトレジスト層上でリソグラフィ操作を実施するステップと、
前記スパッタされた材料中の前記形成されたパターンをエッチングするステップと、
前記フォトレジスト層を取り除くステップであって、前記フォトレジスト層を取り除くステップが、リモートO2プラズマまたはリモートH2/N2プラズマを使用して前記フォトレジスト層をアッシングするステップを含むステップと
をさらに含む、請求項11に記載の方法。 - フィルムスタック上にハードマスクを形成するための方法であって、
チャンバの中に配設されたターゲットからシリコンを含む材料を基板の表面上にスパッタするステップと、
前記ターゲットから前記材料をスパッタするステップの間、プロセスガスの流れを送達するステップであって、前記プロセスガスが酸素および窒素を含むステップと
を含み、
前記スパッタされた材料の光学特性が、前記スパッタされた材料の表面上に配設されることになるフォトレジスト層の光学特性と、意図されるリソグラフィ露光波長において実質的に等価な値を持つように、前記プロセスガス中の酸素と窒素の比が調節され、前記プロセスガスは、アルゴン、ヘリウム、ネオン、クリプトン、キセノン、窒素、フォーミングガス、アンモニア、酸素、水素、水、及び炭素を含むガスからなる群から選択されるガスを含む方法。 - 前記プロセスガスは、メタン(CH4)、一酸化炭素(CO)、または二酸化炭素(CO2)を含む請求項22に記載の方法。
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TWI606294B (zh) | 2017-11-21 |
US9478421B2 (en) | 2016-10-25 |
US9177796B2 (en) | 2015-11-03 |
US20140327117A1 (en) | 2014-11-06 |
CN105190840A (zh) | 2015-12-23 |
CN106169415B (zh) | 2020-02-14 |
TW201447475A (zh) | 2014-12-16 |
KR20160004381A (ko) | 2016-01-12 |
KR101821304B1 (ko) | 2018-01-23 |
CN105190840B (zh) | 2018-10-12 |
JP2016525788A (ja) | 2016-08-25 |
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