TW202129708A - 藉由循環電漿增強型沉積製程形成地形選擇性氧化矽膜之方法 - Google Patents
藉由循環電漿增強型沉積製程形成地形選擇性氧化矽膜之方法 Download PDFInfo
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- TW202129708A TW202129708A TW109133757A TW109133757A TW202129708A TW 202129708 A TW202129708 A TW 202129708A TW 109133757 A TW109133757 A TW 109133757A TW 109133757 A TW109133757 A TW 109133757A TW 202129708 A TW202129708 A TW 202129708A
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Abstract
本發明提供藉由循環電漿增強型沉積製程形成地形選擇性氧化矽膜之方法。方法可包括:藉由電漿增強型原子層沉積(PEALD)製程或循環電漿增強型化學氣相沉積(循環PECVD)製程形成地形選擇性氧化矽膜。方法亦可包括:選擇性地在非平面基板之水平表面上方或選擇性地在非平面基板之垂直表面上方形成氧化矽膜。
Description
本揭示大致係關於藉由循環電漿增強型沉積製程形成地形選擇性(topographically selective)氧化矽膜之方法,及特定言之係關於選擇性地在非平面基板之水平表面上方或選擇性地在非平面基板之垂直表面上方形成氧化矽膜之方法。本揭示亦大致關於地形選擇性循環電漿增強型沉積製程,諸如,比方說,電漿增強型原子層沉積(PEALD)製程、及循環電漿增強型化學氣相沉積(PECVD)製程。
在半導體裝置技術領域中,可在製造半導體積體電路期間利用氧化矽膜。舉例而言,氧化矽膜可在製造半導體裝置結構(諸如,比方說,電晶體、記憶單元、邏輯裝置、記憶體陣列等)期間用作絕緣材料。
常見的氧化矽膜沉積製程可,例如,將基板加熱至高於大約400 °C之溫度及隨後使基板暴露至正矽酸四乙酯(TEOS)蒸氣以於基板表面上方沉積一層二氧化矽。該等常見的氧化矽膜沉積方法可沉積跨越基板之表面相當等形的氧化矽膜,即氧化矽膜跨越基板之地形具有相當均勻的厚度。
然而,針對下一代技術節點,可有利地形成具有地形選擇性的氧化矽,例如,提供在非平面基板表面上方形成氧化矽膜之能力,其具有相對於非平面基板之第二平面之對非平面基板之第一平面的選擇性。
因此,需要用來形成地形選擇性氧化矽膜,及特定言之係選擇性地在非平面基板之水平表面上方形成氧化矽膜或選擇性地在非平面基板之垂直表面上方形成氧化矽膜的方法。
根據本揭示之至少一個具體例,提供一種藉由循環電漿增強型沉積製程形成地形選擇性氧化矽膜之方法。方法可包括:將包含一或多個水平表面及一或多個垂直表面之非平面基板提供至反應室中;使非平面基板與包含矽組分、碳組分、及氫組分之氣相反應物接觸;使非平面基板與由包含氧前驅體及稀有氣體之氣體產生之電漿所產生的反應性物種接觸;及選擇性地在非平面基板之水平表面上方或選擇性地在非平面基板之垂直表面上方形成氧化矽膜。
本揭示之具體例亦包括一種藉由循環電漿增強型沉積製程形成地形選擇性氧化矽膜之方法。方法可包括:將包含一或多個水平表面及一或多個垂直表面之非平面基板提供至反應室中;使非平面基板與由第一氣體產生之第一反應性物種接觸,第一氣體至少包括含有矽組分、碳組分、及氫組分之氣相反應物;使非平面基板與由第二氣體產生之第二反應性物種接觸,第二氣體至少包括氧前驅體及稀有氣體;及選擇性地在非平面基板之水平表面上方或選擇性地在非平面基板之垂直表面上方形成氧化矽膜。
本揭示之具體例亦包括一種藉由電漿增強型原子層沉積製程於非平面基板上形成地形選擇性氧化矽膜之方法。方法可包括:使非平面基板與包含矽組分、碳組分、及氫組分之氣相反應物接觸;使非平面基板與至少包括氧離子之複數個離子接觸,其中複數個離子在實質上垂直於基板之水平平面的方向上衝擊基板;及相對於非平面基板之垂直表面選擇性地在非平面基板之水平表面上方沉積氧化矽膜。
為了總結本發明及相對於先前技術所達成的優點,本發明之某些目的和優點已說明如上。當然,應理解,並非根據本發明之任何特定具體例皆必定達成所有此等目標或優點。因此,舉例而言,熟悉本技藝者應認識到,本發明可以如本文所教示或建議達成或最佳化一個優點或一組優點而無須達成如本文可能教示或建議之其他目標或優點的方式實施或執行。
所有此等具體例皆意欲在本文所揭示之本發明之範疇內。此等及其他具體例將自以下參見附圖的某些具體例之詳細描述而對熟悉本技藝者變得顯而易見,但本發明並不受限於所揭示之任何一或多個特定具體例。
儘管在下文中揭示某些具體例及實施例,但熟悉本技藝者將理解,本發明延伸超出本發明所具體揭示之具體例及/或用途以及其明顯修改及等效物。因此,希望所揭示之本發明之範疇不應受下文所描述之特定揭示之具體例限制。
如文中所使用,術語「地形選擇性」可指在非平面基板上形成材料膜,其具有相對於非平面表面之第二平面之對非平面表面之第一平面的選擇性,即相對於在第二平面上之材料厚度在第一平面上形成更大的材料厚度。
此外,地形選擇性製程之「選擇性」可表示為形成於非平面基板之第一平面上之材料相對於形成於第一平面及第二平面上之材料組合量的比率。舉例來說,就水平表面選擇性製程而言,如地形選擇性製程於非平面基板之水平表面上形成10奈米之材料及於非平面基板之垂直表面上形成1奈米之材料,則地形選擇性製程將被視為具有90%選擇性。作為再一實例,就垂直表面選擇性製程而言,如地形選擇性製程於非平面基板之垂直表面上形成10奈米之材料及於非平面基板之水平表面上形成1奈米之材料,則地形選擇性製程將被視為具有90%選擇性。
如本文所用,術語「基板」可指任何底層材料或可使用其或在其上可形成裝置、電路或膜之材料。
如本文所用,術語「氣體」可指蒸氣或汽化固體及/或液體,且可由單一氣體或氣體混合物構成。
如本文所用,術語「反應性物種」可指藉由氣體之電漿激發所產生的一或多種物種,且可包括,但不限於,離子、自由基、及激發物種。
如本文中所使用,術語「氧化矽膜」可指至少包含矽組分及氧組分之材料膜。除了至少矽組分及氧組分外,術語「氧化矽膜」可包含其他組分,包括,但不限於,碳組分、氮組分、及氫組分。舉例來說,氧化矽膜可包含二氧化矽(SiO2
)、低氧化矽(SiOx
)(其中x可低於2)、氧碳化矽、或摻雜氧化矽。
本文中所使用之術語「膜」及「薄膜」可指藉由本文中所揭示方法而沉積之任何連續或不連續結構及材料。舉例而言,「膜」及「薄膜」可包括2D材料、奈米層合物、奈米棒、奈米管、或奈米粒子或甚至部分或完全分子層或部分或完全原子層或原子及/或分子之群集。「膜」及「薄膜」可包含具有針孔,但仍為至少部分連續之材料或層。
如本文中所使用,術語「循環電漿增強型沉積製程」可指包含一或多個重複單位沉積循環,尤其是一單位沉積循環之複數個連續重複的氣相沉積製程,其中一單位沉積循環包括使用自電漿產生的一或多種反應性物種。
如本文所使用,術語「電漿增強型原子層沉積」(plasma-enhanced atomic layer deposition, PEALD)可指在反應室中實施沉積循環(較佳地複數個連續沉積循環)的氣相沉積製程。通常,在每個單位沉積循環期間,前驅體被化學吸附至沉積表面(例如,基板表面或例如來自先前PEALD循環之材料的先前沉積之下層表面),從而形成不容易與其它前驅體反應(亦即,自限反應(self-limiting reaction))的單層或次單層。其後,接著可將由自一或多種前驅體產生之電漿所產生的反應性物種引入至反應室中或於反應室中產生,用來將經化學吸附之前驅體轉變成在沉積表面上之期望材料。此外,在各單位沉積循環期間,亦可利用沖洗步驟,以在化學吸附之前驅體轉化之後,自反應室移除過量前驅體及反應性物種及/或自反應室移除過量反應物、反應性物種及/或反應副產物。
如本文所使用,術語「循環電漿增強型化學氣相沉積」(循環PECVD)可指在反應室中實施沉積循環(較佳地複數個連續沉積循環)的氣相沉積製程。通常,在各單位沉積循環期間,可藉由通過連續施加RF功率或RF功率之兩個或更多個脈衝之電漿產生一或多種反應性物種。相對於PEALD製程,循環PECVD製程通常不採用氣相反應物之化學吸附及化學吸附分子層之隨後轉化為期望材料。循環電漿增強型化學氣相沉積亦可稱為脈衝式電漿增強型化學氣相沉積。
如本文中所使用,術語「水平表面」可指基本上水平延伸的基板平面,其中基本上水平可包含在水平之約30度、或約15度、或甚至5度內的基板平面。
如本文中所使用,術語「垂直表面」可指基本上垂直延伸的基板平面,其中基本上垂直可包含在垂直之約30度、或約15度、或甚至5度內的基板平面。
在本揭示之所有具體例中給出多種實例材料,應注意針對每種實例材料所給出之化學式不應被視為限制性且所給出之非限制性實例材料不應受給定的實例化學計量所限制。
於說明書中,可以理解,用語「於...上」或「於...上方」可用來描述相對位置關係。另一元件或層可直接位於所述層上,或者可以在其間插入另一層(中間層)或元件,或是可以在所述層上設置層但不完全覆蓋所述層的表面。因此,除非單獨使用「直接」一詞,否則用語「於...上」或「於...上方」將解釋為相對概念。與此類似,應理解術語「在...下」,「在...下面」或「在...下方」將被解釋為相對概念。
本揭示之具體例可包括藉由循環電漿增強型沉積製程形成地形選擇性氧化矽膜之方法。特定而言,文中揭示之地形選擇性沉積方法可相對於非平面基板之第二平面將氧化矽膜選擇性地形成於非平面基板之第一平面上方。舉例來說,可相對於基板之垂直表面將氧化矽膜選擇性地形成於基板之水平表面上方(「水平表面選擇性製程」)。或者,可相對於基板之水平表面將氧化矽膜選擇性地形成於基板之垂直表面上方(「垂直表面選擇性製程」)。
本揭示之具體例可提供藉由直接地形選擇性沉積製程相對於垂直表面將氧化矽膜形成於水平表面上方的地形選擇性形成製程。此外,本揭示之具體例可提供藉由沉積氧化矽膜並且地形控制氧化矽膜性質,使得所沉積之氧化矽膜可與蝕刻劑接觸,其可選擇性地移除設置於非平面基板之水平表面上方之氧化矽膜來相對於水平表面將氧化矽膜形成於垂直表面上方的地形選擇性形成製程。
下一代的半導體裝置製程可能需要氧化矽膜的非等形、地形選擇性沉積。舉例來說,選擇性地形成於基板之水平表面(諸如,溝槽結構之水平表面)上方的氧化矽膜,例如,可歸因於選擇性氧化矽膜對電漿蝕刻的耐蝕刻性而被利用作為犧牲蝕刻遮罩。
已藉由許多方法展示非等形地形選擇性膜沉積。舉例來說,已研究等形氧化矽沉積及濕式化學蝕刻之組合,其中調整氧化矽膜之沉積,以於基板之垂直表面上方(例如,於溝槽結構之側壁上方)獲得不良品質的膜。在該等實例中,垂直氧化矽膜可歸因於在非平面基板之垂直表面上之氧化矽膜相較於在非平面基板之水平表面上之氧化矽膜之顯著較高蝕刻速率而藉由蝕刻劑選擇性地移除。
此外,已經由利用生長抑制劑或生長加速劑來展示非等形地形選擇性膜沉積。然而,使用生長抑制劑/加速劑由於添加為獲得期望選擇性所需的化學濕式蝕刻步驟而減小經加工基板的產出量。此外,加工成本可由於抑制劑/加速劑化學品成本的費用以及達成目標平面之活化/抑制所需的最佳化期間而增加。
當前揭示之地形選擇性形成製程可於與PEALD設備、或PECVD設備相關的反應室內進行,設備經組態具有用來脈衝RF功率及依序將兩種或更多種前驅體供給至反應室的適當硬體。在本揭示之一些具體例中,經利用來形成地形選擇性氧化矽膜的反應室可係能夠提供各向異性電漿,即其中至少游離物種於實質上一致的方向上經加速的電漿,而非其中激發物種以隨機方向穿越的各向同性電漿。在一些具體例中,經利用來形成地形選擇性氧化矽膜的反應室可產生電漿,諸如經由向兩個電極中之一者施加RF功率來激發的電容耦合電漿(capacitively coupled plasma, CCP)。此外,在一些具體例中,可使用感應耦合電漿(inductively coupled plasma, ICP)、電子迴旋加速器共振(electron cyclotron resonance, ECR)電漿、微波表面電漿、螺旋波電漿等作為電漿,其中視需要於電極之間施加偏電壓以提高電漿與電極之間的DC偏壓。
作為一非限制性實例,地形選擇性氧化矽膜之形成可經由在兩個電極之間(非平面基板平行於兩個電極置於其間)施加電壓,經由調整電漿激發氣體之轟擊來實現。電漿係具高自由電子含量(約50%)的部分游離氣體,且當電漿係藉由在平行電極之間施加AC電壓來激發時,離子藉由在電漿鞘與下部電極之間發展出的自DC偏壓 (VDC
)加速。經加速的離子在實質上垂直於基板之水平平面(即垂直於下部電極之水平平面)的方向(離子入射方向)上轟擊置於下部電極上的非平面基板。電漿之轟擊可以電漿密度或離子的動能來表示。電漿密度主要可藉由調整反應室內之壓力及RF功率來調節(壓力愈低及RF功率愈高,電漿密度就變得愈高)。電漿密度亦可藉由施加具有針對隨後離子設定之較低頻率(例如,低於1 MHz)之DC偏電壓或AC電壓來調節。
當前揭示之循環電漿增強型沉積製程可藉由單位沉積循環之一或多次重複來形成地形選擇性氧化矽膜,其中單位沉積循環可包括自電漿產生反應性物種。作為一非限制性實例,沉積循環可使用諸如繪示於圖1中之設備100的適當設備來進行。舉例來說,圖1係例示性PEALD設備100的示意圖,其期望地結合經編程以進行下述程序之控制且可用於本發明的一些具體例。在此圖中,藉由在反應室103的內部111(反應區)中設置彼此平行且面對的一對導電平板電極104、102,施加RF功率(例如,13.56 MHz或27 MHz)120至一側及將另一側112電接地,在電極之間激發電漿。溫度調節器係在下部台102(下部電極)中提供,且放置在其上之基板101的溫度在給定溫度下保持恆定。上部電極104亦充當噴淋頭板,且反應物氣體(及稀有氣體)及前驅體氣體分別通過氣體管線121及氣體管線122以及通過噴淋頭板104引入反應室103中。
此外,在反應室103中,提供具有排氣管線107之圓管113,通過其排出反應室103之內部111中的氣體。此外,稀釋氣體係通過氣體管線123引入反應室103中。進一步地,經設置於反應室103下方之轉移室105具備密封氣體管線124以經由轉移室105之內部116(轉移區)將密封氣體引入反應室103之內部111中,其中提供用於將反應區與轉移區分開之分隔板114(此圖省略閘閥,晶圓經由該閘閥轉移至轉移室105中或從該轉移室轉移)。轉移室亦具備排氣管線106。在一些具體例中,多元素膜沉積及表面處理係在相同反應空間中執行,使得所有步驟可連續地實施,而不使基板暴露至空氣或其他含氧大氣。在一些具體例中,遠端電漿單元可用於激發氣體。
在本揭示之一些具體例中,可利用循環電漿增強型沉積製程來形成地形選擇性氧化矽膜且製程可包括電漿增強型原子層沉積(PEALD)或循環電漿增強型化學氣相沉積(循環PECVD)。簡言之,將非平面基板或工件置於反應室中,加熱至沉積溫度,及經受交替重複的表面反應,即藉由單位沉積循環的一或多次重複。在一些具體例中,各單位沉積循環(即PEALD循環或循環PECVD循環)包括至少兩個不同階段。
在第一階段中,可將氣相反應物或自氣相反應物產生之電漿提供至反應室中並與非平面基板表面接觸。此反應物或電漿產生之反應性物種在本文中亦稱為「矽前驅體」、「含矽前驅體」、「矽反應物」、或「矽反應性物種」且可包含,例如,氣相反應物或自包含矽組分、碳組分、及氫組分之氣相反應物產生的電漿。
在本揭示之一些具體例中,矽反應物基本上由矽組分、碳組分、及氫組分所組成。在一些具體例中,矽反應物可包含烷基矽烷,諸如,比方說,二甲基矽烷、三甲基矽烷、四甲基矽烷、二乙基矽烷、三乙基矽烷、四乙基矽烷、第三丁基矽烷(及其衍生物),或包含兩個矽原子之矽反應物,諸如,比方說,六甲基二矽烷。在一些具體例中,矽反應物可包含芳基矽烷,諸如,比方說,苯基矽烷、二苯基矽烷、三苯基矽烷、四苯基矽烷、二苄基矽烷、三苄基矽烷、或四苄基矽烷。在一些具體例中,矽反應物可包含芳烷基矽烷,諸如,比方說,三甲基-(3-甲基苯基)矽烷、或二甲基(4-甲基苯基)矽烷。
在本揭示之一些具體例中,矽反應物可進一步包含氮組分或氧組分之至少一者。舉例來說,矽反應物可包含烷基烷氧基矽烷或烷基胺基矽烷之至少一者。在一些具體例中,矽反應物可包含烷基烷氧基矽烷,諸如,比方說,甲基三甲氧基矽烷、乙氧基(三甲基)矽烷、二乙基-甲基-乙氧基矽烷、乙基(二甲基)乙氧基矽烷、第三丁基-三乙氧基矽烷、或丁基(三甲氧基)矽烷。在一些具體例中,矽反應物可包含烷基胺基矽烷,諸如,比方說,參(二甲基胺基)乙基矽烷。
在一些具體例中,矽反應物可由下式(I)表示:
其中R1
、R2
、R3
、及R4
可包含矽、碳、及氫及R1
、R2
、R3
、及R4
中之至少一者不同於氫或矽及R1
、R2
、R3
、及R4
不包含氧、氮、或鹵素。
在第二階段中,提供包含反應性物種之第二反應物且可將矽反應物轉變為氧化矽膜。在本揭示之一些具體例中,第二反應物可包含由包含氧前驅體及稀有氣體之氣體產生之電漿所產生的反應性物種。
在一些具體例中,氧前驅體可包含分子氧(O2
)、二氧化碳(CO2
)、或一氧化二氮(N2
O)之至少一者。在一些具體例中,稀有氣體包含氬氣、氮氣、或氦氣之至少一者。在一些具體例中,稀有氣體對氧前驅體之流速比可大於1、或大於2、或甚至大於3。
自單單由氧前驅體組成之氣體所產生之電漿一般係各向同性的,其主要包含不受電場影響且於實質上隨機方向中穿越的氧自由基。本揭示之具體例自包含氧前驅體及稀有氣體之氣體產生電漿,以致所產生之電漿可富含可能受電場影響的離子,及尤其複數個離子可在向下朝向非平面基板的方向中在實質上垂直的方向中各向異性地經加速及在實質上垂直於基板之水平平面(即垂直於沉積設備之下部電極之水平平面)的方向中轟擊或衝擊非平面基板。舉例來說,離子入射方向可實質上垂直於圖1之設備100的下部電極102。在本揭示之具體例中,離子衝擊速率(即複數個離子撞擊非平面基板之速率)在非平面基板之水平表面上與非平面之垂直表面相比較大,其可能導致與基板之垂直表面相比,氧化矽膜在基板之水平表面上的地形選擇性沉積。此外,撞擊水平表面及垂直表面之離子衝擊速率的差異可能導致氧化矽膜組成的地形控制,即在水平表面上之氧化矽膜的組成可不同於在垂直表面上之氧化矽膜的組成,其可藉由設置於非平面基板之水平表面上方之氧化矽膜的選擇性蝕刻而實現垂直表面選擇性氧化矽膜。水平表面選擇性氧化矽形成製程
在本揭示之一些具體例中,藉由循環電漿增強型沉積製程來形成地形選擇性氧化矽膜之方法可包括相對於非平面基板之垂直表面選擇性地於非平面基板之水平表面上方形成氧化矽膜,即可相對於可能形成在非平面基板之垂直表面上方之氧化矽材料之厚度於非平面基板之水平表面上方形成更大厚度的氧化矽材料。
在本揭示之一些具體例中,水平表面選擇性氧化矽形成製程可藉由相對於垂直表面選擇性地於水平表面上直接沉積氧化矽膜來達成。在一些具體例中,當前揭示之水平表面選擇性氧化矽沉積製程可包括循環電漿增強型沉積製程,諸如,比方說,電漿增強型原子層沉積(PEALD)製程、或循環電漿增強型化學氣相沉積(循環PECVD)製程。
因此,本揭示之具體例可因此包括藉由循環電漿增強型沉積製程來形成地形選擇性氧化矽膜之方法。方法可包括:將包含一或多個水平表面及一或多個垂直表面之非平面基板提供至反應室中;使非平面基板與包含矽組分、碳組分、及氫組分之氣相反應物接觸;使非平面基板與由包含氧前驅體及稀有氣體之氣體產生之電漿所產生的反應性物種接觸;及選擇性地在非平面基板之水平表面上方或選擇性地在非平面基板之垂直表面上方形成氧化矽膜。
本揭示之具體例亦包括一種藉由電漿增強型原子層沉積製程於非平面基板上形成地形選擇性氧化矽膜之方法。方法可包括:使非平面基板與包含矽組分、碳組分、及氫組分之氣相反應物接觸;使非平面基板與至少包括氧離子之複數個離子接觸,其中複數個離子以實質上垂直於非平面基板之水平平面之方向衝擊基板;及相對於非平面基板之垂直表面選擇性地在非平面基板之水平表面上方沉積氧化矽膜。
可利用來形成水平選擇性氧化矽膜之循環電漿增強型沉積製程的一非限制性實例具體例係電漿增強型原子層沉積(PEALD)。簡言之,將基板或工件置於反應室中並經受交替重複的表面反應。在一些具體例中,藉由重複自限性PEALD循環而形成氧化矽膜。
用來形成水平選擇性氧化矽膜之一例示性PEALD製程參照圖2作說明。例示性PEALD製程200可包括兩階段,第一階段包括使基板與包含矽組分、碳組分及氫組分之氣相反應物接觸,及第二階段包括使基板與由電漿產生的反應性物種接觸。
更詳言之且參照圖2,例示性製程200可從製程方塊210開始,其包括:將基板提供至反應室中及將基板加熱至適當沉積溫度。
在一些具體例中,基板可包括一或多種材料且材料表面包括,但不限於,半導體材料、介電材料、及金屬材料。舉例來說,基板可包括半導體材料,諸如,但不限於,矽(Si)、鍺(Ge)、鍺錫(GeSn)、矽鍺(SiGe)、矽鍺錫(SiGeSn)、碳化矽(SiC)或第III族-第V族半導體材料。
於本揭示之一些具體例中,基板可包括包含有高縱橫比特徵(諸如,比方說,溝槽結構、垂直間隙特徵、及/或鰭片結構)之圖案化非平面基板。術語「間隙特徵」可指設置於相對傾斜側壁之間的開口或空腔或自基板表面垂直延伸的兩個突出物或垂直延伸至基板表面中之凹部的相對傾斜側壁,此一間隙特徵可被稱作包含水平表面及垂直表面兩者的「垂直間隙特徵」。在一些具體例中,垂直間隙特徵可具有可大於2:1、或大於5:1、或大於10:1、或大於25:1、或大於50:1、或甚至大於100:1的縱橫比(高度:寬度),其中如於此實例中所使用的「大於」係指於間隙特徵之高度中的較大距離。
在一些具體例中,將其上需要沉積之基板載入至反應室中。於一些具體例中,反應室可形成於其中進行半導體裝置結構形成中之各種不同製程之群集工具的一部分。在一些具體例中,可利用流動型反應器。在一些具體例中,可利用噴淋頭型反應器。在一些實施例中,可利用空間分割反應器。在一些實施例中,可利用能夠進行大量製造的單晶圓PEALD反應器。在其他具體例中,可利用包含多個基板的批式反應器。對於其中使用批式PEALD反應器之具體例,基板之數目可在10至200、或50至150、或甚至100至130之範圍內。
於一些具體例中,若需要,可對基板之經暴露表面進行預處理,以提供與PEALD製程之第一階段反應的反應性部位。於一些具體例中,不需要個別的預處理步驟。於一些具體例中,預處理基板以提供期望的表面終端,例如,經由使基板表面暴露至預處理電漿。
在本揭示之一些具體例中,可針對例示性PEALD製程200(圖2)之後續循環沉積階段205將設置於反應室內之基板加熱至期望沉積溫度。舉例而言,基板可經加熱至低於大約600 °C、或低於大約550 °C、或低於大約500 °C、或低於大約450 °C、或低於大約400 °C、或低於大約350 °C、或低於大約300 °C、或甚至低於大約250 °C之基板沉積溫度。在本揭示之一些具體例中,例示性電漿增強型原子層沉積製程200期間之基板沉積溫度可在介於大約150 °C與大約600 °C之間。
除了控制基板的溫度之外,還可以調節反應室內的壓力以實現期望氧化矽膜的沉積。在一些具體例中,調節反應室內的壓力亦可控制於電漿內產生之反應性物種的群體密度及性質。因此,在一些具體例中,可在例示性PEALD製程200期間將反應室中之壓力調節於大於150帕斯卡(Pascal)、或大於300帕斯卡、或大於450帕斯卡、或大於600帕斯卡、或甚至大於800帕斯卡之壓力。舉例來說,在一些具體例中,可在例示性PEALD製程200期間將反應室內之壓力調節於150帕斯卡與800帕斯卡之間。
一旦已將基板之溫度設定至期望沉積溫度且已視需要調節反應室中之壓力,則可藉由循環沉積階段205繼續例示性製程200,其可包括將一或多種沉積氣體提供至反應室,其中沉積氣體可包括氣相反應物、沖洗氣體、載體氣體、及利用來自電漿產生反應性物種的氣體。
簡言之,在循環沉積階段205的第一階段中,可將包含矽組分、碳組分、及氫組分之氣相反應物「矽前驅體」「脈衝」至反應室中,其中可將術語「脈衝」理解為包括將反應物饋送至反應室中持續預定時間量。術語「脈衝」並不限定脈衝之長度或持續時間,且脈衝可為任何時間長度。在一些具體例中,除矽前驅體外,可於例示性PEALD製程200的循環沉積階段205期間將氣體混合物連續地提供至反應室。在一些具體例中,氣體混合物可包括用來產生於PEALD製程200之第二階段期間利用之反應性物種的氣體混合物且亦可利用作為用來自反應室移除過量反應物、反應性物種、及反應副產物的沖洗氣體。
更詳言之,例示性PEALD製程200的循環沉積階段205可藉由製程方塊220來繼續,其包括使基板與包含矽組分、碳組分、及氫組分之氣相反應物(即矽前驅體)接觸。
在一些具體例中,可首先將矽前驅體提供至基板。在初始表面終止之後,若需要或期望,則可將矽前驅體脈衝供應至基板。根據一些具體例,矽前驅體可連同載體氣體流一起供應至反應室。在一些具體例中,矽前驅體可包括可與基板表面反應的揮發性矽物種。矽前驅體脈衝可使基板表面自飽和,使得矽前驅體脈衝之過量組份不會進一步與由此製程所形成之分子層反應。
矽前驅體脈衝較佳作為氣相反應物供應。出於本揭示之目的,若物種在製程條件下呈現足夠的蒸氣壓使物種以足以使暴露表面飽和之濃度輸送至基板表面,則可將矽前驅體氣體視為「揮發性」。
在本揭示之一些具體例中,氣相反應物基本上由矽組分、碳組分、及氫組分組成。在一些具體例中,氣相反應物可包含如先前說明於文中的烷基矽烷、芳基矽烷、芳烷基矽烷、烷基烷氧基矽烷、或烷基胺基矽烷。
在本揭示之一些具體例中,可將矽前驅體脈衝至反應室中持續約0.05秒至約5.0秒、或約0.1秒至約3秒、或甚至約0.2秒至約1.0秒之時段。在一些具體例中,矽前驅體可經脈衝至反應室中持續少於0.1秒、或甚至少於0.05秒之時段。此外,於基板與矽前驅體接觸期間,矽前驅體之流速可低於1000 sccm,或低於500 sccm,或低於100 sccm,或低於50 sccm,或甚至低於5 sccm。此外,於基板與矽前驅體接觸期間,矽前驅體的流速可從約5至50 sccm,或從約50至100 sccm,或從約100至約1000 sccm。
於足以使分子層吸附於基板表面上的時間後,可自反應室移除過量的矽前驅體。在一些具體例中,過量的矽前驅體可藉由停止氣相矽前驅體之流動,同時使載體氣體、沖洗氣體、或氣體混合物繼續流動足夠的時間,以使過量的反應物及反應副產物(若存在)自反應室擴散或排空來沖洗。在一些具體例中,可藉助可在例示性PEALD製程200之整個循環沉積階段205中流動之一或多種惰性氣體(諸如氮氣、氦氣或氬氣)來沖洗過量的矽前驅體。
在一些具體例中,可將矽前驅體自反應室沖洗約0.1秒至約60秒、或約0.3秒至約30秒、或甚至約0.3秒至約10秒之時段。可將矽前驅體之提供及移除視為例示性PEALD製程200的第一或「矽階段」。
當完成沖洗反應室中之過量矽前驅體及任何反應副產物時,例示性PEALD製程200之循環沉積階段205可藉由製程方塊230繼續進行第二階段,其包括使基板與由包含氧前驅體及稀有氣體之氣體產生之電漿所產生之反應性物種接觸。
在一些具體例中,氧前驅體可包含分子氧(O2
)、二氧化碳(CO2
)、或一氧化二氮(N2
O)之至少一者。在一些具體例中,稀有氣體包含氬氣、氮氣、或氦氣中之至少一者。在一些具體例中,進入反應室中之稀有氣體對氧前驅體之流速比可係大於1、或大於2、或甚至大於3。如先前所述,電漿(「基於氧之電漿」)可富含離子,包括至少氧離子,且可使用平行板電極組態來產生,該電極組態可將複數個離子在實質上垂直的方向上向下朝向基板各向異性地加速。
在一些具體例中,基於氧之電漿可經由施加約50 W至約1000 W、或約100 W至約500 W、或約100 W至約300 W之RF功率來產生。在一些具體例中,電漿可於原位產生,而在其他具體例中,電漿可於遠端產生。在一些具體例中,可利用噴淋頭反應器且可在下部電極(即基板位於其頂部上之基座)與上部電極(即噴淋頭板)之間產生電漿。
在一些具體例中,自電漿產生之反應性物種可與基板接觸介於約0.1秒至約12秒、或約0.5秒至約5.0秒、或甚至約0.5秒至約2.0秒之間的時段。在一些具體例中,自電漿產生之反應性物種可與基板接觸低於1秒、或低於0.5秒、或甚至低於0.1秒的時段。
在足以使先前所吸附之分子層完全飽和且與基於氧之電漿脈衝反應的時段後,可自反應室移除任何過量的反應物及反應副產物。如同移除氣相反應物(即矽前驅體),此步驟可包括停止產生反應性物種及使惰性氣體繼續流動。可使惰性氣體流流動足以使過量反應性物種及揮發性反應副產物擴散出反應室並自反應室排空的時段。舉例來說,可利用沖洗製程持續介於約0.1秒至約10秒、或約0.1秒至約4.0秒、或甚至約0.1秒至約0.5秒之間的時段。基於氧之電漿的提供及移除一起代表圖2之例示性氮化矽PEALD製程200中的第二、反應性物種階段。
其中基板交替及依序地與氣相矽前驅體接觸及與自包含氧前驅體及稀有氣體之氣體產生之反應性物種接觸的方法可構成一單位沉積循環。在本揭示之一些具體例中,例示性PEALD製程200可包括將該單位沉積循環重複一或多次。例如,例示性PEALD製程200之循環沉積階段205可以決定閘240繼續,其判定PEALD製程200是否要繼續或離開。製程方塊240之決定閘係根據所沉積之氧化矽膜的厚度來判定,例如,若氧化矽膜的厚度對於所要裝置結構而言係不足的,則PEALD製程200可以返回至製程方塊220,並且可以重複使基板與矽前驅體接觸(製程方塊220)及使基板與反應性物種接觸(製程方塊230)之製程一或多次。一旦氧化矽膜已經沉積至所要厚度,則例示性PEALD製程200可以經由製程方塊250離開,並且可以使氧化矽膜經受額外的製程,以形成半導體裝置結構。
雖然在本文中提及PEALD循環時一般以矽階段開始,但涵蓋在其他具體例中,該循環可以反應性物種階段開始。熟習此技藝人士將認識到,第一前驅體階段一般與前一循環中之最後階段留下的終止反應。因此,雖然若反應性物種係PEALD循環中之第一階段,則先前可能沒有反應物吸附於基板表面上或存在於反應室中,但在後續循環中,反應性物種階段將有效地跟隨矽階段。在一些具體例中,於沉積製程中提供一或多個不同的PEALD循環。
參照圖3說明當前揭示之水平選擇性PEALD製程之一非限制性例示性單位沉積循環的再一概述。如圖3中所繪示,水平軸代表時間參數但不一定代表個別製程的實際時間長度,及垂直軸代表氣體流及RF功率之開-狀態或關-狀態,其中在各參數之垂直軸上的高起水平代表開-狀態但各線之垂直軸不一定代表相關參數的實際量,而各線在垂直軸上之底部水平代表關-狀態,即零氣體流量、或未供應RF功率。
簡言之,在單位沉積循環的第一期間310(即前驅體脈衝期間)中,可將矽前驅體連同稀有氣體及氧前驅體之流動一起脈衝至反應室中。在此第一期間310中,矽前驅體可化學吸附於基板之非平面表面上,從而形成至多一單層。在第二期間320(即沖洗期間)中,停止矽前驅體之流動及繼續稀有氣體及氧前驅體之流動,以致將反應室中之過量矽前驅體任何反應副產物排空。在第三期間330(即RF脈衝期間)中,氧前驅體及稀有氣體繼續流入至反應室中及將RF功率之脈衝供應至氣體以激發電漿及產生反應性物種,其可與經化學吸附的矽前驅體反應,藉此形成氧化矽膜。在第四期間340(即沖洗期間)中,RF功率係呈關-狀態及稀有氣體及氧前驅體繼續流動,藉此將反應室中之過量反應性物種及任何反應副產物排空。
可利用來形成水平選擇性氧化矽膜之循環電漿增強型沉積製程的另一非限制性實例具體例係循環電漿增強型化學氣相沉積(循環PECVD)。簡言之,可將非平面基板或工件置於反應室中並經受一或多個循環PECVD沉積循環。
用來形成水平選擇性氧化矽膜之一例示性循環PECVD製程參照圖4作說明。例示性循環PECVD製程400可包括兩階段,第一階段包括使基板與由包含矽組分、碳組分及氫組分之氣相反應物產生的第一反應性物種接觸,及第二階段包括使基板與由包含氧前驅體及稀有氣體之氣體產生之第二反應性物種接觸。
更詳言之且參照圖4,例示性製程400可從製程方塊410開始,其包括:將基板提供至反應室中及將基板加熱至適當沉積溫度。
在本揭示的一些具體例中,基板可包含如先前揭示於文中的材料及地形,及尤其包括包含有一或多個水平表面及一或多個垂直表面的非平面基板。此外,反應室可包含如先前說明於文中的任何反應室(及相關設備),及尤其可包含電漿增強型化學氣相沉積(PECVD)反應室及相關設備,包括用來產生各向異性電漿的平行板電極組態。
在本揭示之一些具體例中,可針對例示性循環PECVD製程400(圖4)之後續循環沉積階段405將設置於反應室內之基板加熱至期望沉積溫度。舉例而言,基板可經加熱至低於大約600 °C、或低於大約550 °C、或低於大約500 °C、或低於大約450 °C、或低於大約400 °C、或低於大約350 °C、或低於大約300 °C、或甚至低於大約250 °C之基板溫度。在本揭示之一些具體例中,例示性循環PECVD製程300期間之基板溫度可在介於大約150 °C與大約600 °C之間。
除了控制基板的溫度之外,還可以調節反應室內的壓力以實現期望氧化矽膜的沉積。在一些具體例中,調節反應室內的壓力亦可控制於電漿內產生之反應性物種的群體密度及性質。因此,在一些具體例中,可在例示性循環PECVD製程400期間將反應室中之壓力調節於大於150帕斯卡、或大於300帕斯卡、或大於450帕斯卡、或大於600帕斯卡、或甚至大於800帕斯卡之壓力。舉例來說,在一些具體例中,可在例示性循環PECVD製程400期間將反應室內之壓力調節於150帕斯卡與800帕斯卡之間。
一旦已將基板之溫度設定至期望沉積溫度且已視需要調節反應室中之壓力,則可藉由循環沉積階段405繼續例示性製程400,其可包括使基板與由電漿產生之第一反應性物種接觸及使基板與由電漿產生之第二反應性物種接觸。
更詳言之,例示性循環PECVD製程400的循環沉積階段405可藉由製程方塊420來繼續,其包括使基板與由包含矽組分、碳組分、及氫組分之氣相反應物(即矽前驅體)產生的第一反應性物種接觸。
在一些具體例中,第一反應性物種可包含至少自包含矽組分、碳組分、及氫組分之氣相反應物產生的多個反應性物種。舉例來說,氣相反應物可包含先前揭示於文中的所有矽前驅體,且可包括,但不限於,烷基矽烷、芳基矽烷、芳烷基矽烷、烷基烷氧基矽烷、或烷基胺基矽烷。
在本揭示之一些具體例中,可使第一反應性物種與非平面基板接觸約0.05秒至約5.0秒、或約0.1秒至約3秒、或甚至約0.2秒至約1.0秒之時段。此外,在基板與第一反應性物種接觸期間,氣相反應物的流速可小於1000 sccm、或小於500 sccm、或小於100 sccm、或小於50 sccm、或甚至小於5 sccm。
例示性循環PECVD製程400的循環沉積階段405可藉由製程方塊430來繼續,其包括使基板與由包含氧前驅體及稀有氣體之氣體產生之第二反應性物種接觸。在一些具體例中,氧前驅體可包含分子氧(O2
)、二氧化碳(CO2
)、或一氧化二氮(N2
O)之至少一者,及稀有氣體可包含氬氣、氮氣、或氦氣之至少一者。
在一些具體例中,第二反應性物種可自電漿產生且可與基板接觸介於約0.1秒至約12秒、或約0.5秒至約5.0秒、或甚至約0.5秒至約2.0秒之間的時段。在一些具體例中,自電漿產生之第二反應性物種可與基板接觸低於1秒、或低於0.5秒、或甚至低於0.1秒的時段。
其中基板與第一反應性物種接觸及與第二反應性物種接觸之方法可構成單位沉積循環。在本揭示之一些具體例中,例示性循環PECVD製程400可包括將單位沉積循環重複一或多次。例如,例示性循環PECVD製程400之循環沉積階段405可以決定閘440繼續,其判定循環PECVD製程400是否要繼續或離開。製程方塊440之決定閘係根據所沉積之氧化矽膜的厚度來判定,例如,若氧化矽膜的厚度對於所要裝置結構而言係不足的,則循環PECVD製程400可以返回至製程方塊420,並且可以重複使基板與第一反應性物種接觸(製程方塊420)及使基板與第二反應性物種接觸(製程方塊430)之製程一或多次。一旦氧化矽膜已經沉積至所要厚度,則例示性循環PECVD製程400可以經由製程方塊450離開,並且可以使氧化矽膜經受額外的製程,以形成半導體裝置結構。
雖然圖4之例示性循環PECVD製程400係經說明為先使基板與第一反應性物種接觸隨後再使基板與第二反應性物種接觸,但應明瞭在當前揭示之循環PECVD製程中可利用所有使基板與反應性物種接觸的替代順序。舉例來說,在一些具體例中,第一反應性物種及第二反應性物種兩者可在一單位沉積循環內同時與基板接觸。作為再一實例,在一些具體例中,第二反應性物種可與基板接觸,隨後接著在單位沉積循環內使基板與第一反應性物種接觸。在一些具體例中,可使基板重複地與第一反應性物種接觸,隨後再在單位沉積循環內使基板與第二反應性物種接觸一或多次。或者,可使基板重複地與第二反應性物種接觸,隨後再在單位沉積循環內使基板與第一反應性物種接觸一或多次。在一些具體例中,在使基板與反應性物種接觸之後可接著沖洗循環,如先前說明於文中。
參照圖5說明當前揭示之水平選擇性循環PECVD製程之一非限制性例示性單位沉積循環的再一概述。如圖5中所繪示,水平軸代表時間參數及垂直軸代表開-狀態或關-狀態,如先前參照圖3所說明。
簡言之,在單位沉積循環的第一期間510(即沉積期間)中,稀有氣體及氧前驅體可連同矽前驅體之脈衝一起流入至反應室中,同時並施加RF功率之連續饋送。在第二520、第三530、及第四540期間(即沖洗期間)中,矽前驅體之流動可呈關-狀態,同時稀有氣體及氧前驅體維持流動並且持續饋送RF功率。
因此,在一些具體例中,單位沉積循環包括使基板同時與第一反應性物種及第二反應性物種接觸,及沖洗過量的第一反應性物種及第二反應性物種及任何反應副產物。在上述具體例中,第一反應性物種及第二反應性物種可與非平面基板接觸低於1秒、或低於0.5秒、或低於0.1秒的時段。在一些具體例中,非平面基板與第一及第二反應性物種之間的短接觸期間可導致沉積對非平面基板之上方水平表面具地形選擇性的氧化矽膜,例如,當與沉積於下方水平表面(即於溝槽結構之底部表面)及垂直表面(即溝槽側壁)上之材料相比時,更多材料沉積於溝槽結構的上方水平表面上。
參照圖6說明當前揭示之例示性水平選擇性循環PECVD製程之另一例示性單位沉積循環。如圖6中所繪示,水平軸代表時間參數及垂直軸代表開-狀態或關-狀態,如先前參照圖3所說明。
簡言之,在單位沉積循環的第一期間610(即沉積期間)中,稀有氣體可連同氧前驅體之脈衝一起流入至反應室中。此外,在第一期間610中,矽前驅體可藉由兩個或更多個離散脈衝引入至反應室中及RF功率可作為一離散脈衝施加。在單位沉積循環的第二期間620(即沖洗期間)中,氧前驅體流動、矽前驅體流動、及RF功率可呈關-狀態,然而維持稀有氣體之流入至反應室中,藉此沖洗反應室。在單位沉積循環的第三期間630(即處理期間)中,可提高(即升高)稀有氣體之流量持續選定的時段,且可向稀有氣體施加RF功率之一離散脈衝,藉此產生稀有氣體的激發物種。在一些具體例中,可使用稀有氣體之激發物種(例如,氬離子或氦離子)來移除設置於非平面基板之水平表面邊緣處的過量氧化矽膜沉積。在第四期間640(即沖洗期間)中,可使稀有氣體之流量下降至先前的流量水平,同時氧前驅體流動、矽前驅體流動、及RF功率係呈關-狀態。
因此,在一些具體例中,單位沉積循環可包括使基板同時與第一反應性物種及第二反應性物種接觸,沖洗過量的第一反應性物種及過量的第二反應性物種及任何反應副產物,使基板與自稀有氣體產生之第三反應性物種(即稀有氣體之電漿激發)接觸,及自反應室沖洗過量的第三反應性物種及任何反應副產物。在上述具體例中,氧化矽膜可相對於非平面基板之垂直表面選擇性地沉積於非平面基板之水平表面上方。
參照圖7說明當前揭示之例示性水平選擇性循環PECVD製程之另一例示性單位沉積循環。如圖7中所繪示,水平軸代表時間參數及垂直軸代表開-狀態或關-狀態,如先前參照圖3所說明。
簡言之,在單位沉積循環的第一期間710(即沉積期間)中,稀有氣體可使稀有氣體連同矽前驅體的兩個或更多個脈衝一起流入至反應室中。此外,在第一期間710中,可向氣體施加RF功率之離散脈衝。在該等具體例中,可藉由濺鍍效應於基板之水平表面上沉積包含矽、碳、及氫之膜。在第二期間720(即沖洗期間)中,可維持稀有氣體之流動,及矽前驅體流動及RF功率可呈關-狀態。在第三期間730(即氧化期間)中,可維持稀有氣體之流動,同時將氧前驅體脈衝連同RF功率之離散脈衝一起供應至反應室中。在一些具體例中,第三期間730可產生基於氧之電漿,其可氧化先前經濺鍍沉積的膜,藉此形成氧化矽膜。在第四期間740(即沖洗期間)中,可維持稀有氣體之流動,同時氧前驅體流動、矽前驅體流動、及RF功率係呈關-狀態。
因此,在一些具體例中,單位沉積循環可包括:使基板與第一反應性物種接觸,使基板與自包含稀有氣體之氣體產生之第四反應性物種接觸,自反應室沖洗任何反應性物種及反應副產物,使基板與第二反應性物種接觸,及自反應室沖洗任何反應性物種及反應副產物。在上述具體例中,氧化矽膜可相對於非平面基板之垂直表面選擇性地沉積於非平面基板之水平表面上方。
作為本揭示之具體例的一非限制性實例,圖8A-B繪示一例示性非平面基板在地形選擇性氧化矽形成之前(圖8A)及地形選擇性氧化矽形成之後(圖8B)的橫截面示意圖,其中氧化矽膜係相對於非平面基板之垂直表面選擇性地形成於非平面基板之水平表面上方。
更詳言之,圖8A繪示非平面基板800之橫截面示意圖。非平面基板可包含如先前說明於文中的所有材料及地形,及在特定具體例中,非平面基板800可包含矽基板。非平面基板800可包括若干個溝槽結構802(「垂直間隙特徵」),其可包含一或多個水平表面804及一或多個垂直表面806。
圖8B繪示非平面基板800於在水平表面及垂直表面上方形成地形選擇性氧化矽之後的橫截面示意圖。如圖8B中所繪示,氧化矽膜808可利用前述的PEALD製程或循環PECVD製程沉積於非平面基板800上方。在此特定實例中,氧化矽係藉由水平表面選擇性製程形成,及因此,氧化矽膜808可包含設置於非平面基板800之水平表面上方之氧化矽膜810,其具有較設置於非平面基板800之垂直表面上方之氧化矽膜812大的厚度。
如先前揭示於文中,地形選擇性製程之「選擇性」可表示為形成於非平面基板之第一平面上之材料相對於形成於第一平面及第二平面上之材料組合量的百分比比率。針對此水平表面選擇性製程之實例,選擇性可計算為設置於水平表面上方之氧化矽膜厚度與設置於水平表面及垂直表面兩者上方之組合氧化矽膜厚度的百分比比率。因此,在本揭示之一些具體例中,與在非平面基板之垂直表面上方之沉積相比,在非平面基板之水平表面上方之沉積的地形選擇性可大於50%、或大於60%、或大於70%、或大於80%、或大於90%、或甚至等於100%。
作為本揭示之具體例之其他非限制性實例,圖9A-B繪示例示性非平面基板在氧化矽膜之地形選擇性形成後的掃描穿隧電子顯微鏡(STEM)影像,其中氧化矽膜係相對於垂直表面對於水平表面上方沉積具選擇性。
更詳言之,圖9A-B之非平面地形選擇性氧化矽膜係藉由PEALD製程利用六甲基二矽烷作為矽前驅體、分子氧 (O2
) 作為氧前驅體、及氬氣作為稀有氣體,在大約250 °C之沉積溫度下沉積。
圖9A繪示非平面矽基板900及設置於非平面基板之水平表面902上方之氧化矽膜及設置於非平面基板之垂直表面904上方之氧化矽膜。在此非限制性實例中,將PEALD製程之單位沉積循環重複500個循環以獲得圖9A中所繪示的氧化矽膜厚度。檢視圖9A說明設置於水平表面902上方之氧化矽膜具有大約7奈米之厚度及設置於垂直表面904上方之氧化矽膜具有大約3奈米之厚度,從而產生具有70%之選擇性的水平表面選擇性製程。
圖9B繪示另一非平面矽基板906及設置於非平面基板之水平表面908上方之氧化矽膜及設置於非平面基板之垂直表面910上方之氧化矽膜。在此非限制性實例中,將PEALD製程之單位沉積循環重複1000個循環以獲得圖9B中所繪示的氧化矽膜厚度。檢視圖9B說明設置於水平表面908上方之氧化矽膜具有大約11奈米之厚度及設置於垂直表面910上方之氧化矽膜具有大約3.5奈米之厚度,從而產生具有75%之選擇性的水平表面選擇性製程。
作為本發明之具體例之其他非限制性實例,圖10繪示水平及垂直氧化矽膜厚度兩者隨一例示性地形選擇性PEALD之單位沉積循環數目增加之演變。更詳言之,此實例之地形選擇性PEALD製程係水平表面選擇性製程,即與沉積於垂直表面上方之氧化矽膜厚度相比將更大厚度的氧化矽膜沉積於水平表面上方。在此例示性PEALD製程中,矽前驅體係六甲基二矽烷,氧前驅體係分子氧 (O2
),及稀有氣體係氬氣,及沉積溫度係大約250 °C。進一步檢視圖10說明設置於水平表面上方之氧化矽膜明顯地較設置於垂直表面上方之氧化矽膜厚。舉例來說,於500個沉積循環後沉積之氧化矽膜具有大約7奈米之水平厚度及大約3奈米之垂直厚度,從而產生70%之選擇性。作為再一實例,於1000個沉積循環後沉積之氧化矽膜具有大約11奈米之水平厚度及3.5奈米之垂直厚度,從而產生75%之選擇性。垂直表面選擇性氧化矽形成製程
在本揭示之一些具體例中,藉由循環電漿增強型沉積製程來形成地形選擇性氧化矽膜之方法可包括相對於非平面基板之水平表面選擇性地於非平面基板之垂直表面上方形成氧化矽膜,即可相對於可能形成在非平面基板之水平表面上方之氧化矽材料之厚度於非平面基板之垂直表面上方形成更大厚度的氧化矽材料。
在本揭示之一些具體例中,垂直選擇性氧化矽形成製程可利用先前結合選擇性蝕刻設置於水平表面上方之氧化矽膜所揭示的地形選擇性沉積方法來達成。
在一些具體例中,垂直表面選擇性製程可藉由利用循環電漿增強型沉積,諸如,比方說,電漿增強型原子層沉積(PEALD)、或循環電漿增強型化學氣相沉積(循環PECVD),形成地形選擇性氧化矽膜來達成。在一些具體例中,循環電漿增強型沉積可包括循環蝕刻設置於非平面基板之水平表面上方之氧化矽膜。在一些具體例中,可使氧化矽膜在沉積後與蝕刻劑接觸。
在一些具體例中,氧化矽膜之選擇性形成於非平面基板之垂直表面上包括將與非平面基板之水平表面上之氧化矽膜之碳含量相比具有較高碳含量之氧化矽膜沉積於非平面基板之垂直表面上,即對氧化矽膜沉積進行地形組成控制。對氧化矽膜沉積之地形組成控制可經由除了利用自包含氧前驅體及稀有氣體之氣體產生之基於氧之各向異性電漿外再利用包含矽組分、碳組分、及氫組分之矽前驅體來實現。
作為氧化矽膜沉積之地形組成控制之一非限制性實例,循環電漿增強型沉積製程之單位沉積循環可包括將矽前驅體化學吸附於非平面表面上方從而形成至多單層之矽前驅體,及隨後使非平面基板與包含經於實質上垂直方向中向下朝向基板加速之複數個離子之各向異性電漿接觸。歸因於離子入射方向係實質上垂直於非平面基板之水平平面,相對於垂直表面之較大數量的離子轟擊或衝擊非平面基板之水平表面。因此,離子與經吸附矽物種之反應於水平表面上與垂直表面相比將較大,藉此可能無法達成垂直表面上之沉積膜的完全轉變,從而導致在設置於垂直表面上方之氧化矽膜中維持顯著的碳含量。
因此,在一些具體例中,地形選擇性沉積製程可將包含較非平面基板之水平表面上之氧化矽膜高之碳含量的氧化矽膜沉積於非平面基板之垂直表面上。舉例來說,設置於垂直表面上方之氧化矽膜可包含氧碳化矽或碳摻雜氧化矽。經沉積氧化矽膜的蝕刻速率可視經沉積氧化矽膜中之碳濃度而不同。舉例來說,在一些具體例中,於非平面基板之垂直表面上之氧化矽膜可具有較非平面基板之水平表面上之氧化矽膜低的蝕刻速率。
可利用由於地形組成控制所引起之經沉積氧化矽膜之蝕刻速率的差異來相對於設置於垂直表面上方之氧化矽膜選擇性地移除設置於水平表面上方之氧化矽膜。在一些具體例中,設置於水平表面上方之氧化矽膜可於循環電漿增強型沉積製程期間經由添加另外的製程步驟(其可包括使非平面基板與由包含氫氣及稀有氣體之氣體產生之電漿所產生之額外反應性物種接觸)來選擇性地移除。在一些具體例中,設置於水平表面上方之氧化矽膜可經由使基板在沉積後與蝕刻劑接觸以相對於非平面基板之垂直表面上之氧化矽膜選擇性地移除非平面基板之水平表面上之氧化矽膜來選擇性地移除。在一些具體例中,於循環式沉積循環期間水平表面上之氧化矽的選擇性移除可與使基板於沉積後與蝕刻劑接觸組合。
一例示性的循環電漿增強型沉積製程可包括PEALD製程,其包括一或多個循環蝕刻步驟以選擇性地移除設置於非平面基板之水平表面上方的氧化矽膜,藉此提供垂直表面選擇性製程。
更詳言之,圖11繪示例示性PEALD製程1100,其包括用來選擇性地移除非平面基板之水平表面上之氧化矽膜的循環蝕刻步驟。例示性PEALD製程1100可以製程方塊1110開始,其包含在反應室中提供非平面基板及將基板加熱至適當沉積溫度。製程方塊1100可與製程方塊210(圖2)相同,及因此為簡明起見不重複此製程的細節。
例示性PEALD製程1100可藉由循環沉積-蝕刻階段1105繼續。在一些具體例中,循環沉積-蝕刻1105可始於製程方塊1120,其包括使基板與包含矽組分、碳組分、及氫組分之氣相反應物接觸。製程方塊1120可與製程方塊220(圖2)相同,及因此為簡明起見不重複此製程的細節。循環沉積-蝕刻階段1105可以製程方塊1130繼續,其包括使基板與自包含氧前驅體及稀有氣體之氣體產生之電漿所產生的反應性物種接觸。製程方塊1130可與製程方塊230(圖2)相同,及因此為簡明起見不重複此製程的細節。在例示性PEALD製程1100中,製程方塊1120及1130可總稱為「循環沉積步驟」。
循環沉積-蝕刻階段1105可以製程方塊1140繼續,其包括使基板與自包含氫氣及稀有氣體之氣體產生之電漿所產生的額外反應性物種接觸。在例示性PEALD製程1100中,製程方塊1140可稱為「循環蝕刻步驟」。在一些具體例中,額外反應性物種相對於非平面基板之垂直表面上之氧化矽膜選擇性地移除非平面基板之水平表面上之氧化矽膜。
在本揭示之一些具體例中,用來產生供循環蝕刻步驟(製程方塊1140)用之電漿的氣體可包含氫氣及稀有氣體。在一些具體例中,稀有氣體可包含氬氣、氮氣、或氦氣中之至少一者。在一些具體例中,稀有氣體相對於進入反應室中之氫氣的流速比可係大於2、或大於3、或甚至大於4。
在一些具體例中,經利用來選擇性地蝕刻氧化矽膜之額外反應性物種可經由向包含氫氣及稀有氣體之氣體施加RF功率來產生。舉例來說,施加至氣體之RF功率可係低於500 W、或低於300 W、低於100 W、或介於500 W與50 W之間。
在一些具體例中,額外反應性物種可經由使用平行板電極組態自各向異性電漿產生,且各向異性電漿可包含可於實質上垂直方向中向下朝向基板加速之複數個離子。電漿的各向異性特性可導致離子衝擊速率可在非平面基板之水平表面上與非平面基板之垂直表面相比更大,從而導致與基板之垂直表面相比選擇性地蝕刻基板之水平表面上之氧化矽膜。
在本揭示之一些具體例中,額外反應性物種可與非平面基板接觸低於5秒、或低於3秒、或甚至低於1秒的時段。在一些具體例中,額外反應性物種可與非平面基板接觸介於0.05秒與1秒之間的時段。
於循環蝕刻步驟(製程方塊1140)後,可沖洗反應室以移除任何過量反應性物種及任何副產物。在一些具體例中,可將反應室沖洗約0.1秒至約10秒、或約0.3秒至約5秒、或甚至約0.3秒至約1秒之時段。
作為一非限制性實例,圖12繪示顯示氧化矽膜之蝕刻厚度(奈米)與電漿暴露時間(秒)之關係的橢圓偏振數據。舉例來說,稀有氣體可包含氬氣,反應室壓力可為大約350帕斯卡,基板溫度可為大約450 °C,及RF功率可為大約100 W。檢視圖12說明就30秒的電漿暴露時間而言,蝕刻大約0.4奈米的氧化矽膜(蝕刻速率0.8奈米/分鐘),及就60秒的電漿暴露時間而言,蝕刻大約0.7奈米的氧化矽(蝕刻速率0.7奈米/分鐘)。
例示性PEALD製程1100(圖11)之循環沉積-蝕刻階段1105可以決定閘1150繼續,其判定PEALD製程1100是否要繼續或離開。製程方塊1150之決定閘係根據形成於非平面基板上之氧化矽膜的厚度來判定,例如,若氧化矽膜的厚度對於所要裝置結構而言係不足的,則PEALD製程1100可以返回至製程方塊1120,並且使非平面基板與矽前驅體接觸(製程方塊1120),使非平面基板與反應性物種接觸(製程方塊1130),及使基板與自氫氣產生之反應性物種接觸(製程方塊1140),並且可使單位循環重複一或多次。
應明瞭使基板與矽前驅體(製程方塊1120)、反應性物種(製程方塊1130)、及額外反應性物種(製程方塊1140)接觸之序列可以所有可能的序列順序進行。此外,一或多個製程方塊可在進行後續製程方塊之前重複一或多次。一旦氧化矽膜已經形成至所要厚度,則例示性PEALD製程1100可以經由製程方塊1160離開,並且可以使氧化矽膜經受額外的製程,以形成半導體裝置結構。
參照圖13說明當前揭示之垂直選擇性循環PEALD製程之一非限制性例示性單位沉積循環的再一概述。如圖13中所繪示,水平軸代表時間參數及垂直軸代表開-狀態或關-狀態,如先前參照圖3所說明。
簡言之,在第一期間1310(即矽前驅體脈衝期間)中,稀有氣體及氧前驅體可連同矽前驅體之脈衝一起流入至反應室中,且矽前驅體可化學吸附於非平面基板之表面上。在第二期間1320(即沖洗期間)中,稀有氣體及氧前驅體可維持流動以沖洗反應室,同時其餘參數係呈關-狀態。在第三期間1330(即RF功率期間)中,稀有氣體及氧前驅體可維持流動且可將RF功率之脈衝施加至氣體以形成至少包含氧離子之電漿,其可與經化學吸附之矽反應以形成氧化矽膜。在第四期間1340(即沖洗期間)中,所有參數可呈關-狀態且反應室可經由將任何反應性物種及副產物排空至真空泵來沖洗。在第五期間1350(即蝕刻期間)中,可將氫氣之脈衝及稀有氣體之脈衝提供至反應室且可將RF功率脈衝施加至氣體以形成各向異性電漿,其選擇性地蝕刻水平表面上之氧化矽膜。在第六期間1360(即沖洗期間)中,所有參數可呈關-狀態且反應室可經由將任何反應性物種及副產物排空至真空泵來沖洗。在一些具體例中,稀有氣體可於期間1340及期間1360中保持流動以輔助沖洗反應室。
垂直表面選擇性氧化矽形成製程之再一非限制性實例可包括地形沉積氧化矽膜,接著在沉積之後,經由使氧化矽膜與蝕刻劑接觸以相對於垂直表面上之氧化矽膜選擇性地移除水平表面上之氧化矽膜。
更詳言之,圖14繪示例示性垂直選擇性製程1400,其可從製程方塊1410開始,其包括將基板提供至反應室中及將基板加熱至適當沉積溫度。製程方塊1410可與製程方塊210(圖2)或製程方塊410(圖4)相同,及因此為簡明起見不重複此製程的細節。例示性垂直選擇性製程1400可藉由循環電漿增強型沉積製程繼續,其可包括(圖2之例示性PEALD製程之)循環沉積階段205、(圖4之例示性循環PECVD製程之)循環沉積階段405、或(圖11之例示性PEALD製程1100之)循環沉積-蝕刻階段1105,其皆已詳細說明於前及因此為簡明起見不再重複。
根據本揭示之具體例用來沉積氧化矽膜之循環電漿增強型沉積方法可進一步包括氧化矽膜的地形組成控制,如先前說明於文中。因此,在一些具體例中,設置於垂直表面上方之氧化矽膜的碳組成可大於設置於水平表面上方之氧化矽膜的碳組成。此一碳含量之差異導致設置於垂直表面及水平表面上方之氧化矽膜之蝕刻速率的差異,即在垂直表面上方之氧化矽膜的蝕刻速率較低,且可利用此蝕刻速率之差異來選擇性地移除設置於非平面基板之水平表面上方的氧化矽膜。
因此,例示性垂直選擇性氧化矽形成製程1400可藉由製程方塊1420來繼續,其包括使氧化矽膜與蝕刻劑接觸以相對於設置於非平面基板之垂直表面上方之氧化矽膜選擇性地移除設置於非平面基板之水平表面上方之氧化矽膜。在一些具體例中,氧化矽膜之選擇性蝕刻可完全移除設置於非平面基板之水平表面上方之氧化矽膜,同時維持設置於非平面基板之垂直表面上方之氧化矽膜的厚度。
在本揭示之一些具體例中,蝕刻劑可包含濕式化學蝕刻劑或基於電漿之蝕刻劑。在一些具體例中,濕式化學蝕刻劑可包含氫氟酸(HF),諸如,比方說,稀氫氟酸(1:100)。在一些具體例中,基於電漿之蝕刻劑可包含採用基於氟之化學物(例如,CF4
、SF6
)、基於氯之化學物(例如,Cl2
、BCl3
)的各向異性電漿蝕刻,或如先前說明於文中之基於氫氣的電漿蝕刻劑。
在本揭示之一些具體例中,沉積於垂直表面上之氧化矽膜之蝕刻速率相對於設置於水平表面上之氧化矽膜之蝕刻速率的比可係大於2、或大於3、或大於5、或甚至大於10。作為一非限制性實例,根據本揭示之具體例沉積之氧化矽膜在非平面基板之水平表面上相對於在非平面基板之垂直表面上之氧化矽膜可具有大於200% 蝕刻速率,即水平氧化矽與垂直氧化矽間之濕式蝕刻速率比(wet etch rate ratio, WERR)大於2。
作為本揭示之具體例之一非限制性實例,圖15A-B繪示例示性非平面基板於地形選擇性沉積氧化矽膜並且地形控制氧化矽組成之後(圖15A)及隨後使氧化矽膜與蝕刻劑接觸以相對於設置於垂直表面上之氧化矽膜選擇性地移除設置於水平表面上之氧化矽膜(圖15B)。
更詳言之,圖15A繪示非平面基板1500及設置於基板1500之非平面表面上方者係根據本揭示之具體例沉積之氧化矽膜1510。氧化矽膜包含設置於水平表面1520上方之較厚的氧化矽膜及設置於垂直表面1530上方之較薄的氧化矽膜。此外,設置於垂直表面1530上方之氧化矽膜可具有與設置於水平表面1520上方之氧化矽膜相比更高的碳濃度,及因此垂直氧化矽膜1530可具有較水平氧化矽膜1520低的蝕刻速率。
圖15B繪示於與蝕刻劑(諸如,濕式化學蝕刻劑或各向異性電漿蝕刻劑)接觸後之氧化矽膜。如圖15B中所繪示,設置於非平面基板1500之水平表面上方之氧化矽膜已經選擇性地移除,同時設置於垂直表面1530上方之氧化矽膜維持實質厚度,從而導致垂直表面選擇性氧化矽形成。
如先前揭示於文中,地形選擇性製程之「選擇性」可表示為形成於非平面基板之第一平面上之材料相對於形成於第一平面及第二平面上之材料組合量的百分比比率。針對此垂直表面選擇性製程之實例,選擇性可計算為設置於垂直表面上方之氧化矽膜厚度與設置於水平表面及垂直表面兩者上方之組合氧化矽膜厚度相比的百分比比率。因此,在本揭示之一些具體例中,與設置於非平面基板之水平表面上方之氧化矽膜形成相比,設置於非平面基板之垂直表面上方之氧化矽膜形成的地形選擇性可大於50%、或大於60%、或大於70%、或大於80%、或大於90%、或甚至等於100%。
上文所描述之本發明之例示性具體例並不限制本發明之範疇,因為此等具體例僅為本發明之具體例之實施例,本發明之範疇由所附申請專利範圍及其法定等效物定義。任何等效具體例意欲處於本發明之範疇內。實際上,除本文中所示及所描述者之外,本揭示案之各種修改(諸如所描述之元件的替代性適用組合)根據描述對熟悉本技藝者而言可變得顯而易見。此等修改及具體例亦意欲屬於所附申請專利範圍之範疇內。
100:PEALD設備
101:基板
102:導電平板電極
103:反應室
104:導電平板電極;噴淋頭板
105:轉移室
106:排氣管線
107:排氣管線
111:反應室之內部(反應區)
112:電接地之一側
113:圓管
114:分隔板
116:轉移室的內部(轉移區)
120:RF功率
121:氣體管線
122:氣體管線
123:氣體管線
124:密封氣體管線
200:PEALD製程
205:循環沉積階段
210:製程方塊
220:製程方塊
230:製程方塊
240:決定閘
250:製程方塊
310:前驅體脈衝期間
320:沖洗期間
330:RF脈衝期間
340:沖洗期間
400:循環PECVD製程
405:循環沉積階段
410:製程方塊
420:製程方塊
430:製程方塊
440:決定閘
450:製程方塊
510:沉積期間
520:沖洗期間
530:沖洗期間
540:沖洗期間
610:沉積期間
620:沖洗期間
630:處理期間
640:沖洗期間
710:沉積期間
720:沖洗期間
730: 氧化期間
740: 沖洗期間
800:非平面基板
802:溝槽結構
804:水平表面
806:垂直表面
808:氧化矽膜
810:設置於非平面基板800之水平表面上方之氧化矽膜
812:設置於非平面基板800之垂直表面上方之氧化矽膜
900:非平面矽基板
902:非平面基板之水平表面
904:非平面基板之垂直表面
906:非平面矽基板
908:非平面基板之水平表面
910:非平面基板之垂直表面
1100: PEALD製程
1105:循環沉積-蝕刻
1110:製程方塊
1120:製程方塊
1130:製程方塊
1140:製程方塊
1150:決定閘
1160:製程方塊
1310:矽前驅體脈衝期間
1320:沖洗期間
1330:RF功率期間
1340:沖洗期間
1350:蝕刻期間
1360:沖洗期間
1400:垂直選擇性製程
1410:製程方塊
1420:製程方塊
1430:製程方塊
1500:非平面基板
1510:氧化矽膜
1520:水平表面
1530:垂直表面
儘管本說明書以具體指出且明確主張被視為本發明之具體例的申請專利範圍作結,但在結合隨附圖式閱讀時可更容易自本揭示之具體例之某些實例的描述來確定本揭示之具體例的優勢,在隨附圖式中:
圖1繪示可利用來實施當前揭示之循環電漿增強型沉積方法之例示性設備的示意圖;
圖2繪示包括根據本揭示之具體例藉由PEALD製程用來形成地形選擇性氧化矽膜之例示性製程的製程流程圖;
圖3繪示根據本揭示之具體例用來形成地形選擇性氧化矽膜之PEALD製程的一例示性單位沉積循環;
圖4繪示包括根據本揭示之具體例藉由循環PECVD製程用來形成地形選擇性氧化矽膜之例示性製程的製程流程圖;
圖5繪示根據本揭示之具體例用來形成地形選擇性氧化矽膜之循環PECVD製程的一例示性單位沉積循環;
圖6繪示根據本揭示之具體例用來形成地形選擇性氧化矽膜之循環PECVD製程的另一例示性單位沉積循環;及
圖7繪示根據本揭示之具體例用來形成地形選擇性氧化矽膜之循環PECVD製程的再一例示性單位沉積循環。
圖8A及8B繪示在地形選擇性氧化矽形成之前及之後的一例示性非平面基板,其中氧化矽膜係根據本揭示之具體例相對於非平面基板之垂直表面選擇性地形成於非平面基板之水平表面上方。
圖9A及9B繪示在地形選擇性形成氧化矽膜後之例示性非平面基板的掃描穿隧電子顯微鏡(STEM)影像,其中氧化矽膜係根據本揭示之具體例相對於垂直表面選擇性地沉積於水平表面上方。
圖10繪示根據本揭示之具體例水平及垂直氧化矽膜厚度兩者隨一例示性地形選擇性PEALD製程之單位沉積循環數目增加的演變;
圖11繪示包括根據本揭示之具體例藉由PEALD製程用來形成地形選擇性氧化矽膜之例示性製程的製程流程圖;
圖12繪示呈現一例示性氧化矽膜之蝕刻厚度相對於電漿接觸時間的數據;
圖13繪示根據本揭示之具體例用來形成地形選擇性氧化矽膜之PEALD製程的一例示性單位沉積循環。
圖14繪示說明根據本揭示之具體例藉由循環電漿增強型沉積及選擇性蝕刻之組合用來形成地形選擇性氧化矽膜之一例示性製程的製程流程圖;及
圖15A及15B繪示根據本揭示之具體例於地形選擇性沉積氧化矽膜並且地形控制氧化矽組成及隨後使氧化矽膜與蝕刻劑接觸以相對於設置在垂直表面上之氧化矽膜選擇性地移除設置在水平表面上之氧化矽膜後的例示性非平面基板。
將理解,圖式中之元件係為了簡單及清楚起見而繪示且不一定按比例繪製。例如,圖式中的一些元件之尺寸可相對於其他元件誇大,以幫助提升對本揭示所繪示之具體例的瞭解。
200:PEALD製程
205:循環沉積階段
210:製程方塊
220:製程方塊
230:製程方塊
240:決定閘
250:製程方塊
Claims (39)
- 一種藉由循環電漿增強型沉積製程形成地形選擇性氧化矽膜之方法,該方法包括: 將包含一或多個水平表面及一或多個垂直表面之非平面基板提供至反應室中; 使該非平面基板與包含矽組分、碳組分、及氫組分之氣相反應物接觸; 使該非平面基板與由包含氧前驅體及稀有氣體之氣體產生之電漿所產生的反應性物種接觸;及 選擇性地在該非平面基板之該等水平表面上方或選擇性地在該非平面基板之該等垂直表面上方形成氧化矽膜。
- 如請求項1之方法,其中該氣相反應物基本上由該矽組分、該碳組分、及該氫組分組成。
- 如請求項2之方法,其中該氣相反應物包含烷基矽烷、芳基矽烷、或芳烷基矽烷中之至少一者。
- 如請求項1之方法,其中該氣相反應物進一步包含氮組分或氧組分中之至少一者。
- 如請求項4之方法,其中該氣相反應物包含烷基烷氧基矽烷、或烷基胺基矽烷中之至少一者。
- 如請求項1之方法,其中該稀有氣體包含氬氣、氮氣、或氦氣中之至少一者。
- 如請求項1之方法,其中該氧前驅體包含分子氧(O2 )、二氧化碳(CO2 )、或一氧化二氮(N2 O)中之至少一者。
- 如請求項1之方法,其中該電漿係使用平行板電極組態產生且複數個離子於實質上垂直方向中向下朝向該基板各向異性地加速。
- 如請求項1之方法,其中該氣相反應物化學吸附於該非平面基板之該等垂直表面及該非平面基板之該等水平表面兩者上方,從而在該非平面基板上形成至多一單層之該氣相反應物。
- 如請求項8之方法,其中與該非平面基板之該等垂直表面相比,離子衝擊速率在該非平面基板之該等水平表面上更大,從而導致與該非平面基板之該等垂直表面相比,在該非平面基板之該等水平表面上地形選擇性沉積該氧化矽膜。
- 如請求項10之方法,其中與在該非平面基板之該等垂直表面上方之沉積相比,在該非平面基板之該等水平表面上方之沉積的地形選擇性係大於50%。
- 如請求項10之方法,其中該氧化矽膜在該非平面基板之該等垂直表面上的選擇性沉積包含較在該非平面基板之該等水平表面上之該氧化矽膜高的碳含量。
- 如請求項12之方法,其中在該非平面基板之該等垂直表面上之該氧化矽膜包含氧碳化矽或碳摻雜氧化矽。
- 如請求項12之方法,其中在該非平面基板之該等垂直表面上之該氧化矽膜具有較在該非平面基板之該等水平表面上之該氧化矽膜低的蝕刻速率。
- 如請求項14之方法,其進一步包括使該非平面基板與自包含氫氣及稀有氣體之氣體產生之電漿所產生的額外反應性物種接觸,其中該額外反應性物種相對於該非平面基板之該等垂直表面上之該氧化矽膜選擇性地移除該非平面基板之該等水平表面上之該氧化矽膜。
- 如請求項14之方法,其進一步包括使該非平面基板與蝕刻劑接觸,以相對於該非平面基板之該等垂直表面上之該氧化矽膜選擇性地移除該非平面基板之水平表面上之該氧化矽膜。
- 如請求項16之方法,其中與形成於該非平面基板之該等水平表面上方之該氧化矽膜之厚度相比,形成於該非平面基板之垂直表面上方之該氧化矽膜之厚度的該地形選擇性係大於50%。
- 如請求項1之方法,其中該循環電漿增強型沉積製程包含電漿增強型原子層沉積。
- 如請求項18之方法,其中該電漿增強型原子層沉積包含一單位沉積循環之一或多次重複,其中一單位沉積循環包括: 使該非平面基板與該氣相反應物接觸; 沖洗過量的氣相反應物及反應副產物; 使該非平面基板與該反應性物種接觸;及 沖洗過量的反應性物種及任何反應副產物。
- 如請求項19之方法,其中該單位沉積循環進一步包括使該非平面基板與自包含氫氣及稀有氣體之氣體產生之電漿所產生的額外反應性物種接觸。
- 一種藉由循環電漿增強型沉積製程形成地形選擇性氧化矽膜之方法,該方法包括: 將包含一或多個水平表面及一或多個垂直表面之非平面基板提供至反應室中; 使該非平面基板與由第一氣體產生之第一反應性物種接觸,該第一氣體至少包括含有矽組分、碳組分、及氫組分之氣相反應物; 使該非平面基板與由第二氣體產生之第二反應性物種接觸,該第二氣體至少包括氧前驅體及稀有氣體;及 選擇性地在該非平面基板之該等水平表面上方或選擇性地在該非平面基板之該等垂直表面上方形成氧化矽膜。
- 如請求項21之方法,其中該氣相反應物包含烷基矽烷、芳基矽烷、或芳烷基矽烷中之至少一者。
- 如請求項21之方法,其中該氣相反應物進一步包含氮組分或氧組分中之至少一者。
- 如請求項23之方法,其中該氣相反應物包含烷基烷氧基矽烷、或烷基胺基矽烷中之至少一者。
- 如請求項21之方法,其進一步包括使該非平面基板與蝕刻劑接觸,以相對於該非平面基板之該等垂直表面上之該氧化矽膜選擇性地移除該非平面基板之該等水平表面上之該氧化矽膜。
- 如請求項25之方法,其中與形成於該非平面基板之該等水平表面上方之該氧化矽膜之厚度相比,形成於該非平面基板之垂直表面上方之該氧化矽膜之厚度的該地形選擇性係大於50%。
- 如請求項21之方法,其中該循環電漿增強型沉積製程包含循環電漿增強型化學氣相沉積製程。
- 如請求項27之方法,其中該循環電漿增強型化學氣相沉積製程包含一單位沉積循環之一或多次重複,其中一單位沉積循環包括: 使該非平面基板同時與該第一反應性物種及該第二反應性物種接觸;及 沖洗過量的第一反應性物種及過量的第二反應性物種及任何反應副產物。
- 如請求項28之方法,其中該第一反應性物種及該第二反應性物種與該非平面基板接觸低於1秒的時段。
- 如請求項28之方法,其中該氧化矽膜係地形選擇性地形成於該非平面基板之上方水平表面上。
- 如請求項27之方法,其中該循環化學氣相沉積製程包含一單位沉積循環之一或多次重複,其中一單位沉積循環包括: 使該非平面基板同時與該第一反應性物種及該第二反應性物種接觸; 沖洗過量的第一反應性物種及過量的第二反應性物種及任何反應副產物, 使該非平面基板與自稀有氣體產生之第三反應性物種接觸;及 沖洗過量的第三反應性物種及任何反應副產物。
- 如請求項31之方法,其中該氧化矽膜係相對於該非平面基板之該等垂直表面選擇性地沉積於該非平面基板之該等水平表面上方。
- 如請求項32之方法,其中與在該非平面基板之該等垂直表面上方之沉積相比,在該非平面基板之該等水平表面上方之沉積的該地形選擇性係大於50%。
- 如請求項27之方法,其中該循環化學氣相沉積製程包含一單位沉積循環之一或多次重複,其中一單位沉積循環包括: 使該非平面基板與該第一反應性物種接觸; 使該非平面基板與自包含稀有氣體之氣體產生之第四反應性物種接觸; 沖洗任何反應性物種及反應副產物; 使該非平面基板與該第二反應性物種接觸;及 沖洗任何反應性物種及反應副產物。
- 如請求項34之方法,其中該氧化矽膜係相對於該非平面基板之該等垂直表面選擇性地沉積於該非平面基板之該等水平表面上方。
- 如請求項35之方法,其中與在該非平面基板之該等垂直表面上方之沉積相比,在該非平面基板之該等水平表面上方之沉積的該地形選擇性係大於50%。
- 一種藉由電漿增強型原子層沉積製程於非平面基板上形成地形選擇性氧化矽膜之方法,該方法包括: 使該非平面基板與包含矽組分、碳組分、及氫組分之氣相反應物接觸; 使該非平面基板與至少包括氧離子之複數個離子接觸,其中該複數個離子以實質上垂直於該非平面基板之水平平面之一方向衝擊該非平面基板表面;及 相對於該非平面基板之垂直表面選擇性地在該非平面基板之水平表面上方沉積氧化矽膜。
- 如請求項37之方法,其中與在該非平面基板之該等垂直表面上方之該氧化矽膜之沉積相比,在該非平面基板之該等水平表面上方之該氧化矽膜之沉積的該地形選擇性係大於50%。
- 如請求項37之方法,其進一步包括於該氧化矽膜之選擇性沉積後,使該氧化矽膜與蝕刻劑接觸,以相對於設置於該非平面基板之垂直表面上方之該氧化矽膜,選擇性地移除設置於該非平面基板之水平表面上方之該氧化矽膜。
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US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
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TW202140846A (zh) | 2020-04-17 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 注入器、及垂直熔爐 |
KR20210130646A (ko) | 2020-04-21 | 2021-11-01 | 에이에스엠 아이피 홀딩 비.브이. | 기판을 처리하기 위한 방법 |
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2020
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2022
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US20230143580A1 (en) | 2023-05-11 |
KR20210040264A (ko) | 2021-04-13 |
JP2021061397A (ja) | 2021-04-15 |
CN112593212B (zh) | 2023-12-22 |
US11610774B2 (en) | 2023-03-21 |
CN112593212A (zh) | 2021-04-02 |
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