CN1187795C - 在单一腔室中淀积包含有钛和氮化钛薄膜的堆叠层的方法 - Google Patents
在单一腔室中淀积包含有钛和氮化钛薄膜的堆叠层的方法 Download PDFInfo
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- CN1187795C CN1187795C CNB00800630XA CN00800630A CN1187795C CN 1187795 C CN1187795 C CN 1187795C CN B00800630X A CNB00800630X A CN B00800630XA CN 00800630 A CN00800630 A CN 00800630A CN 1187795 C CN1187795 C CN 1187795C
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Abstract
一种用于将含有钛和氮化钛薄膜的堆叠层淀积到-晶片表面上的单腔室方法。利用等离子体增强化学气相淀积工艺对钛进行淀积并且接着进行等离子体氮化。然后利用热化学气相淀积工艺对氮化钛进行淀积。更可取地,基体和莲蓬式喷头的温度以及腔室内部压力在整个堆叠层淀积的过程中保持在基本恒定的值。
Description
本发明是1999年4月20日提交的、序列号为No.09/294,487的美国专利申请的部分继续申请,在此特将其作为参考而结合到本发明中。
技术领域
本发明通常涉及用于将薄膜镀敷到基体上的化学气相淀积工艺(CVD),更具体地涉及将由诸如钛和氮化钛所组成的阻隔堆叠层敷于半导体晶片基体上的化学气相淀积工艺(CVD)。
背景技术
在集成电路(IC′s)制造过程中,包含金属元件的薄膜通常被淀积在一基体,如一个半导体晶片的表面上。被淀积的薄膜用于在所述电路中以及一IC中的不同装置之间形成导电接触和电阻接触。例如,可以将所需薄膜敷于一接点的外露表面上或者通过孔敷于一半导体晶片上,薄膜穿过所述晶片上的绝缘层以形成由导电材料制成的插脚,从而能够跨绝缘层进行互联。
一种用于淀积薄金属膜的公知技术是化学气相淀积工艺(CVD),其中利用不同的淀积物或反应气体之间的化学反应而将薄膜淀积在基体表面上。在CVD工艺中,反应气体被泵送到一位于一反应室中的基体附近,接着使气体在基体表面上发生反应,所产生的一种或多种反应副产品在基体表面上形成一薄膜。淀积后所遗留下来的所有副产品均被从所述腔室中去除。虽然CVD工艺对于淀积薄膜来说是一种非常实用的技术,但是许多传统的CVD工艺基本上是热处理工艺,并且需要超过500℃或1000℃的温度以获得所需的反应。由于高温会对制成IC的电子设备多个方面以及各层造成影响,所以这样的淀积温度常常因为太高而无法在IC生产中得以实际应用。由于这个原因,一种已经用在CVD工艺中用于降低反应温度的方法是对反应气体中的一种或多种进行电离。这种技术通常被称作等离子体增强化学气相淀积工艺(PECVD)。一种高效的PECVD工艺已经在共同转让的美国专利第5,975,912中进行了描述,其发明名称为“集成电路的低温等离子体增强制造工艺(Low Temperature Plasma-Enhanced Formation of IntegratedCircuits)”,特作为参考而将其全部结合到本发明中。该’912号专利公开了一种用于进行低温(500℃)涂敷的PECVD-Ti和TiN薄膜单一腔室加工方法。美国专利No.5,567,243和5,716,870分别描述了用于淀积PECVD-Ti薄膜的硬件结构和方法,在此作为参考而将其全部结合到本发明中。
在许多应用中,在对某种金属导体,比如铝或钨进行淀积之前,需要一氮化钛阻隔层。氮化钛可以通过化学气相淀积工艺进行淀积。化学气相淀积法中的反应物质和副产品——尤其是四卤化钛——会对钛接触层进行蚀刻。因此,在氮化钛化学气相淀积之前必须对钛进行氮化。从而形成一堆叠层,包括钛薄膜,一钛薄膜的氮化层和一覆盖用氮化钛层,它们均处于底部基体或导体与覆盖层的金属之间。
对钛进行涂敷和氮化的常规方法是利用PECVD工艺。氮化钛的淀积通常是通过热CVD工艺。这些PECVD和热CVD反应涉及不同的工艺参数,相应地需要不同的工艺设备。因而,一般钛(Ti),氮化的钛和氮化钛(TiN)堆叠生产工艺顺序是在两个独立的模具中完成的,通常这两个模具与半导体晶片集成工具中的同一个真空传输模具相连。后续工艺包括有相当长的辅助时间,用于将各个晶片首先传送到一PECVD加工模具中,并且在该模具中建立其用于Ti-PECVD加工的稳定工况。然后在钛淀积及对淀积的钛层进行氮化后,对该模具进行泵送并将晶片经传输模具传送到热CVD加工模具中,进行氮化钛的淀积,包括在用于热CVD-TiN淀积的模具中建立起稳定的工况,并随后将晶片从热CVD-TiN加工模具中取出。
不同的工艺参数已经影响了在同一模具中进行PECVD-TiN和热CVD-TiN工艺的整体化。通常,用于PECVD-TiN工艺的莲蓬式喷头的温度至少为425℃,因为过低的温度将形成一TiClxHy薄膜,该薄膜将会轻易地从莲蓬式喷头上剥离。但是又不超过500℃,因为,过高的温度将会造成莲蓬式喷头中的金属发生氯化腐蚀,就在PECVD反应器中产生等离子体,对温度进行控制以及其他原因来说这个温度是最优选的。另一方面,在用于淀积氮化钛的热CVD反应器中,莲蓬式喷头的温度通常至少为150℃,因为过低的温度将导致NH4Cl凝结,并且又不会超过250℃,因为过高的温度又将导致氮化钛淀积在莲蓬式喷头上。晶片温度和腔室压力对于PECVD-Ti和热CVD反应来说通常是不同的。温度和压力的周期变化会导致淀积物从反应组件上过度剥离,因此需要频繁地当场或者在停机后进行清扫,所有这些都将降低生产效率并且增加辅助时间,尤其是从工艺参数的变化恢复回来的稳定时间。
虽然提出利用氮化钛淀积和钛淀积的PECVD工艺在同一反应器中对钛和氮化钛进行淀积,但利用TiN的热CVD制造出的氮化钛的性能和淀积的效率则具有更优选的优点。
因此,这就需要一种用于对由钛,氮化的钛及氮化钛组成的堆叠层进行淀积的更高效和更实用的方法,尤其是利用PECVD-Ti和热CVD-TiN工艺。
发明内容
根据本发明的第一方面,提供了一种在一单一腔室中将一包含有钛和氮化钛薄膜的堆叠层淀积在一晶片表面上的方法,包括如下步骤:将一具有一晶片表面的基体放置在反应室中,并与一莲蓬式喷头保持间隔;通过在所述腔室中形成由卤化钛和氢气组成的混合气体的第一等离子体,将一钛薄膜淀积在该腔室中的晶片表面上;通过形成从包含氨气、氮气及它们的混合气体的组中选择出的气体的第二等离子体,在所述腔室中对淀积的钛薄膜进行氮化;以及通过利用包含有卤化钛和氮源气体的混合气体进行热CVD工艺,在所述腔室中在经过氮化的淀积钛薄膜上再淀积一层氮化钛薄膜;其中淀积钛薄膜、对淀积的钛薄膜进行氮化和淀积氮化钛薄膜的步骤分别用温度425℃至700℃或者150℃至250℃的莲蓬式喷头执行的。
其中淀积氮化钛薄膜的步骤包括在四氯化钛不足条件下使得氮化钛淀积到第一厚度的第一热CVD淀积步骤,和在饱和四氯化钛条件下使得氮化钛淀积到最终厚度的第二热CVD淀积步骤。
根据本发明的另一方面,提供了一种在一单一腔室中将一包含有钛和氮化钛薄膜的堆叠层淀积在一基体上的方法,包括:将一具有一表面的基体放置在反应室中,并与一莲蓬式喷头保持间隔;利用等离子体增强化学气相淀积工艺在所述腔室中将一钛薄膜淀积在所述表面上;接着通过形成从包含氨气,氮气或氨氮混合气体的组中选择的气体的等离子体,在所述腔室中对淀积的钛薄膜进行氮化;接着利用一热CVD工艺在所述腔室中将一氮化钛薄膜淀积在经过氮化的淀积钛薄膜上;并且在所述腔室中进行钛薄膜淀积,对淀积的钛薄膜进行氮化,以及在经过氮化的淀积钛薄膜上淀积氮化钛薄膜的全过程中,保持所述表面为一至少580℃的恒定温度,保持所述腔室中的总气压为1乇至10乇之间的一恒定压力,并且保持莲蓬式喷头的温度为一至少425℃的恒定温度。
其中在所述腔室中将氮化钛薄膜淀积到经过氮化的淀积钛薄膜上的步骤包括:在一初始步骤中在卤化钛以第一流速流动的卤化钛不足的状况下利用热CVD工艺对氮化钛进行淀积,其中卤化钛被稀释在包括含氮气体的气流中;并且在初始步骤中对氮化钛进行淀积之后,将卤化钛的流速增大到饱和状态下的流速,从而在第二步骤中将氮化钛淀积到初始步骤中淀积的氮化钛上。
另外,钛的PECVD工艺包括在所述腔室中形成包括卤化钛和氢气的混合气体的第一等离子体,其中该第一等离子体形成于基体表面25毫米的范围内。
根据本发明的这种CVD工艺,用于在一单一腔室中连续淀积钛和氮化钛,尤其是利用由PECVD淀积的钛,接着进行氮化,而氮化钛用热CVD工艺进行淀积。为了达到这个目的,根据本发明的原理,一钛薄膜是这样淀积在一反应室中的基体表面上的,首先在接近基体表面处形成四氯化钛气体和氢气的等离子体,接着用一种含氮气体的等离子体,比如氨气,氮气或氨/氮混合气体的等离子体,在腔室中对淀积的钛薄膜进行氮化,然后在同一腔室中利用热CVD工艺将一层氮化钛薄膜淀积在氮化的钛薄膜上。
根据本发明的最佳实施例,基体的温度,莲蓬式喷头的温度以及腔室内的压力在整个钛的淀积,钛的氮化以及氮化钛的淀积过程中基本保持恒定,这就降低了产生剥离和微粒的可能,并且降低了由于工艺参数的变化所造成的辅助时间增加。本发明中的单腔室工艺通过使得氮化钛的淀积与底层钛的淀积以及氮化工艺整体化,提高了生产率。
在本发明的特定优选实施例中,基体温度最好在整个工艺过程中高于使得钛与硅在同一腔室中发生反应的最低温度,但是低于四氯化钛对硅造成蚀刻的最高温度。例如,基体温度最好在整个工艺过程中保持至少500℃左右,不高于700℃左右。更优选地,为了达到最优的范围,所选定的基体温度至少为580℃左右。莲蓬式喷头的温度最好保持在至少425℃左右,以防止不稳定的钛组分从该莲蓬式喷头上剥离,并且在整个工艺过程中不超过约为700℃的最高工艺温度。更优选地,对于金属莲蓬式喷头来说,莲蓬式喷头的温度保持不高于500℃左右,以避免金属发生腐蚀。腔室的内部压力最好在整个工艺过程中大约保持在1乇至10乇之间。从而提供一种能够在一单一反应室中一体进行钛和氮化钛淀积的工艺。
附图说明
附图1是一个用于本发明的淀积室的局部剖面侧视图。美国专利No.5,628,829中公开了这种设备的变形形式,在此作为参考而将其全部结合到本发明中。
具体实施方式
一种高效的PECVD方法已经在共同转让的美国专利No.5,975,912中进行了描述,其发明名称为“集成电路的低温等离子体增强制造工艺(Low Temperature Plasma-Enhanced Formation of IntegratedCircuits)”,在此作为参考而将其全部结合到本发明中。该’912号专利公开了一种用于进行低温(<500℃)涂敷的PECVD-Ti和TiN薄膜单一腔室加工方法。美国专利No.5,567,243和5,716,870分别描述了用于淀积PECVD-Ti薄膜的硬件结构和方法,它们均在此作为参考而将其全部结合到本发明中。共同转让但悬而未决的、申请号为09/063,196、发明名称为“对Ti-PECVD反应室进行钝化并修整的方法及其加工方法(Method of Passivating And Conditioning Ti-PECVD Process ChamberAnd Method of Processing Therewith)”的美国专利申请,在此也作为参考而将其全部结合到本发明中,在该专利申请中公开了用于在一PECVD-Ti模具中进行匹配/稳定PECVD-Ti工艺的流程参数。共同转让但也悬而未决的、申请号为No.08/914,673、发明名称为“TiCl4蚀刻背部的工艺在CVD-Ti/TiN晶片集成工艺中的应用(Use of TiCl4 Etch BackProcess During Integrated CVD-Ti/TiN Wafer Processing)”的美国专利申请,在此也作为参考而将其全部结合到本发明中,该专利申请中公开了一种在CVD-TiN淀积之前将钛薄膜从氧化表面蚀刻掉的方法。该方法避免了诸如在后续CVD-TiN工艺中由于TiCl4的局部压力过高而对钛薄膜造成腐蚀的问题。美国专利No.5,279,857和5,308,655均公开了用于借助一种氨型退火剂降低CVD-TiN薄膜的稳定性的方法,在此也作为参考而将其全部结合到本发明中。在共同转让但悬而未决的、申请号为No.08/940,779号、发明名称为“用于防止CVD和PECVD反应中反应气体过早混合的设备与方法(Apparatus and Method for Preventing thePremature Mixture of Reactant Gases in CVD and PECVD Reactions)”的美国专利申请中,公开了一种能够使得两种气体在未经混合条件下导入一CVD腔室的莲蓬式喷头结构,在此也作为参考而将其结合到本发明中。在共同转让但悬而未决的、申请号为No.09/153,128号、发明名称为“用于对一PECVD加工腔室中的电极进行绝缘的设备(Apparatusfor Electrically Isolating an Electrode in a PECVD Process Chamber)”的美国专利申请中,公开了一种防止在位于RF供电表面与接地表面之间的绝缘层上形成导电通道的结构,在此也作为参考而将其全部结合到本发明中。美国专利No.5,593,511号公开了对钛层进行低温氮化的工艺,在此也作为参考而将其全部结合到本发明中。
附图1示出了一种用于本发明的CVD反应器实施例。一近似结构在美国专利No.5,647,911号中公开,其中所公开的内容在此也作为参考而将其全部结合到本发明中。反应器20包括一个限定了一反应或淀积空间24的淀积室壳体22。反应器20,尤其是壳体22内部的反应空间24,可以选择性地被抽取到多种不同的内部压力。对于钛和氮化钛CVD反应来说,这些压力一般在0.2至20乇范围内。用于夹持基体28的基座26与一轴30联接。基座26也被一加热元件(未示出)加热,以使基座26能够将支撑在其上的基体28加热到进行所述工艺所需的受控温度。通常该温度至少为500℃左右,并且对于此处所描述的工艺来说,该温度最好位于580℃左右至700℃左右的范围内。
从壳体22的顶壁32向下延伸的是一圆柱形组件34,该圆柱形组件34附着一分配气体的莲蓬式喷头36。莲蓬式喷头36通过组件34悬挂在基体28的正上方。该圆柱形组件34与形成在顶部壳体壁32中的开口42一起,形成一在壳体盖46与莲蓬式喷头36之间延伸的大致垂直的流体通道44。该莲蓬式喷头36最好是1997年9月30日提交、申请号为No.08/940,779、发明名称为“用于防止在CVD和PECVD反应中反应气体过早混合的设备与方法(Apparatus and Method for Preventing thePremature Mixture of Reactant Gases in CVD and PECVD Reactions)”的美国专利申请中所描述的后混合(post-mix)型莲蓬式喷头,在此作为参考而将其全部结合到本发明中。莲蓬式喷头36通过一适当的延伸穿过盖46的RF输送管装置40与一RF能量源38耦合。一封闭结构49环绕输送管装置40封闭所述开口。输送管40可以包括一个热管(未示出)用于散失所不希望的热量。从而该莲蓬式喷头可以用作一用于等离子体增强CVD工艺,例如用于钛的淀积和钛的氮化中的电极和气体导入元件,或者用作一个用于淀积氮化钛的气体分送莲蓬式喷头。
所述莲蓬式喷头36由RF能量进行偏置,以用作PECVD工艺中的一个RF电极。RF电极与所产生的浓缩等离子体之间的间隔对于PECVD工艺,尤其是对于含钛薄膜的PECVD工艺来说非常有用。RF能量源38,经RF输送管装置40对莲蓬式喷头36进行偏置,以便该莲蓬式喷头可以被用作RF电极。从而接地基座26可以形成另外一个平行电极。最好在莲蓬式喷头36与基座26之间形成一RF场。通过偏置莲蓬式喷头36而形成的该RF场对经孔64分配的等离子气体进行激励,从而紧靠莲蓬式喷头36的下方生成等离子体,而不是在该莲蓬式喷头/电极正上方的流体空间44中生成。在RF输送管装置40中可以应用绝缘套来在RF管道与圆柱形组件34和壳体22中的金属之间进行绝缘,而石英绝缘环62可用于对莲蓬式喷头36与圆柱形装置34进行绝缘。可利用基座26的旋转来保证气体均匀地流动到等离子体,用于进行均匀淀积。
反应气体,比如TiCl4经圆环50和52导入。随着气体流向莲蓬式喷头36,从圆环50和52流出的气体在流体空间44的长度方向膨胀。反应气体中的气体微粒被莲蓬式喷头36和基座26产生的RF场激励。所以,受激励的反应气体微粒和等离子气体中的原子团和离子所形成的混合气体集中在基体28的正上方,并接近于所述基体。圆柱形组件34的尺寸被确定为使得莲蓬式喷头36与基体28之间的间隔最好小于25毫米,并且优选为20毫米左右。
虽然PECVD-Ti反应和氮化反应对频率并不十分敏感,但是发现施加在用于PECVD的莲蓬式喷头36上的RF能量频率范围例如在450KHz与13.56MHz之间时,是最合适的。靠近基体28利用莲蓬式喷头36在基体表面29附近产生具有高密度有用气体原子团和离子的浓缩等离子体。
废气经出口53从反应空间24中排出。还可以设置节流阀27用于均衡环绕基座26流动的气体流。
这种反应器20适用于对钛,氮化钛,硅化钛进行等离子体增强化学气相淀积,并且适用于对预先淀积的钛薄膜进行低温退火来形成氮化钛。利用上述的反应器20和下述的工艺条件,钛的淀积,氮化以及氮化钛的淀积均可以在反应器20的单一腔室中连续进行。
基体28可以是含有硅或氧化硅的任何类型IC基体,以及包覆或部分包覆金属导体,触点,绝缘层及类似物的这种基体。本发明的某些方面尤其适用于在硅体上进行淀积。
为了淀积一钛薄膜,某种卤化钛气体,比如四氯化钛气体,被添加到氢气中。在此反应中,四氯化钛的流速必须大约为2至100sccm(通常大约为5sccm),并且氢气的流速远大于此。通常,氢气的流速约为四氯化钛流速的10至500倍,例如,300倍左右。也可以使用氩气并且氢气可以相应地被部分省去。用于这些混合气体的气体入口温度或者莲蓬式喷头温度被设定在425℃左右至500℃左右,同时基体被加热到至少约为500℃到700℃之间的某一温度,并且最好为580℃左右。反应室中的压力可以是从0.2乇至20乇左右,通常为1.0乇至10乇左右。当压力高于20乇时,将不可能形成等离子体。
所述RF电极可以在100瓦至5千瓦左右之间工作,其中5千瓦为最大功率,当达到此功率时设备会被损坏。但是,为了实用目的,350瓦左右已足够了。RF电极的频率被设置在从33MHz至55KHz左右,450KHz左右是比较受欢迎的。该频率是由联邦通信委员会规定的频率,并且因而大多数设备均设置在此频率。但是,当然不能确定其为本反应中的最佳值。
因而,混合有卤化钛与氢气的气体被喷射到圆柱形组件34中并且流经RF电极/莲蓬式喷头36。产生一等离子体,形成钛并且淀积在基体28上。氢气与卤化物发生反应,即与氯气发生反应,以形成氯化氢并被排出。反应继续进行并且钛薄膜继续淀积直到所敷薄膜达到所需厚度。根据特定的用途,通常该厚度可以从20埃左右至2000埃左右变化,其取决于所需的用途。
硅化钛层可以选择性地成形在基体表面29上,比如在接触孔中或通路中。为了制取硅化钛,将一种卤化钛气体,最好是四氯化钛,与硅进行反应以制得硅化钛和氯化氢。由于需要保持压力,所以可以导入一种惰性气体,比如氩气或氦气。
接着对如前所述所淀积的钛薄膜在同一反应器20中进行氮化。在此反应中,基体28表面29上淀积的钛薄膜被暴露在含氮等离子体中,比如一种氨气和/或氮气等离子体中。由于氨气具有较好的活性所以优选为氨气。所述等离子体是通过简单地使氮化气体在升高的温度和降低的压力下经受一RF电极激励而形成。氮化气体的流速,最好是氨气或氮气的流速,可以是从10sccm左右至5000sccm左右。最好,RF的频率为580KHz。反应的温度,即基体温度,至少约为500℃,并且最好至少为580℃左右。用于氮化工艺的基体温度最好与用于淀积钛薄膜的基体温度相同,以使得在两工艺之间基体温度基本上没有变化。莲蓬式喷头最好在氮化钛淀积过程中保持在425℃左右至500℃左右之间的某一温度,并且最好与用于淀积钛薄膜的莲蓬式喷头的温度相同。
反应室中的内部压力在氮化过程中必须保持低于大气压,并且通常可以在0.2乇左右到20乇左右之间变化,而优选为1至10乇。最好,在对钛进行氮化的过程中反应室中的内部压力与用于淀积钛薄膜的压力相同,以使得在工艺之间压力不会发生变化。在氮化反应中,反应时间可以从1秒左右变化到100秒左右,而优选为30至50秒左右。
氮化钛通过热CVD工艺而淀积在经过氮化的淀积钛薄膜上,比如通过将四氯化钛或其他卤化钛与一氮气离子源,比如氨气或一种氮气与氢气的混合气体进行反应,以制取氮化钛和作为副产品的氯化氢。卤化钛的流速最好应该从0.5sccm左右至50sccm左右。氮气源气体的流速必须从50sccm左右至5000sccm左右。反应温度,或者说是基体温度,至少为580℃左右,并且最好与用于淀积钛薄膜及氮化钛薄膜工艺中的基体温度相同,以使得在工艺之间基体温度不会发生变化。莲蓬式喷头最好在氮化钛淀积过程中保持在425℃左右至500℃左右之间的某一温度,并且最好与用于淀积钛薄膜和氮化钛薄膜工艺中的莲蓬式喷头温度相同。与低温在常规热CVD-Ti淀积工艺中的用途不同,其中的低温是用来防止氮化钛淀积在莲蓬式喷头上的,较高的温度会使得氮化钛淀积在莲蓬式喷头上,并且利用氮化钛的淀积来将钛的淀积,氮化作用以及氮化钛的淀积工况汇集在一起,并使该反应器更稳定。利用恒定的温度避免了由于温度周期变化而产生微粒。580℃或590℃的莲蓬式喷头温度也可以使用,高达650℃或者甚至是700℃的莲蓬式喷头温度同样可以使用,但莲蓬式喷头必须利用陶瓷或其他抗腐蚀涂层来防止热反应气体与莲蓬式喷头之间发生腐蚀反应。
在对氮化钛进行热CVD工艺的过程中,反应器腔室中的内部压力可以保持在0.2乇左右至20乇左右,最好为1至10乇左右。最好,反应器腔室中的内部压力恒定保持与用于淀积钛薄膜以及用于氮化钛薄膜工艺中的压力相同,以使得在工艺之间基本上不会发生压力变化。
因此,根据本发明,复合层在一单一反应室中淀积到一基体上。首先在基体上淀积一钛层,接着利用氨气或氮气的等离子体进行低温退火对钛层进行氮化。接着根据前述流程淀积出氮化钛层。基体温度,莲蓬式喷头的温度以及内部压力最好在整个过程中基本保持固定。通过避免工艺之间温度与压力发生变化,产生剥离和微粒的可能性将会减小。避免参数变化还因为省去了泵送和净化时间以及其他参数发生变化所带来的辅助时间而更有利于单一腔室的使用,尤其是通过省去或减少由于工艺参数变化所带来进行稳定的时间,从而大大提高了生产率。另外,通过用一个腔室代替两个腔室,两个单腔室Ti/TiN一体化模具可以通过在不同腔室中同时加工两个晶片而加工两倍的晶片。除了通过省去在两个腔室中连续进行加工所伴随的辅助时间之外,这也进一步提高了生产率。本发明中的单一腔室加工工艺还允许制造商们限定一套参数,这些参数将在整个工艺中使用。
在本发明的另一可选择实施例中,首先通过利用PECVD工艺将钛淀积在一硅基表面上来进行整体接触金属喷镀工艺,在此过程中在硅基表面与钛薄膜之间形成一硅化钛层。当钛淀积后,进行氨气或氮气的等离子体低温退火工艺,以形成一经过氮化的硅化钛上层。最后,再次在同一反应室中利用CVD工艺淀积一氮化钛层。
当将氮化钛淀积在一氮化的钛薄膜或经过氮化的硅化钛薄膜上之后,再淀积一低稳定性的金属填充层,比如铜,铝或钨。但是,最后的这次淀积通常需要在一独立腔室中利用溅射淀积技术来实现。任何通常使用的溅射淀积室均可用于这个方面。溅射淀积的方法是本领域技术人员的公知技术。
在本发明的特定实施例中,当将氮化钛薄膜淀积在一经过氮化的钛薄膜或经过氮化的硅化钛薄膜上时,该氮化钛分两个步骤进行淀积。在第一步骤中,在四氯化钛不足的条件下,比如,在四卤化钛的流速为8sccm左右,氨气流速为80sccm左右,作为稀释剂的氮气为每分钟1升并且压力约为1乇的条件下,对钛进行淀积。当氮化钛已经淀积成一薄层,比如其厚度约为50至500埃之后,将四氯化钛的流速提高到饱和状态,比如,达到30sccm,同时氨气和氮气的速率最好保持大致恒定。然后将氮化钛淀积达到所需厚度。
在钛的淀积、氮化以及氮化钛的淀积过程中,TiN(Clx)薄膜会淀积在热的腔室内表面上,比如淀积在莲蓬式喷头,绝缘层,以及晶片区域外周的基座表面上。利用这种在单一腔室中利用恒定的工艺参数进行一体加工,已经发现可以在无需对反应器进行清扫的条件下对数以百计的晶片进行加工。周期性地,在加工完数百个或者近千个晶片之后,可以对反应器进行一次现场清扫,并且也可以以更低的频率进行一次湿法清洗。在对加工腔室进行完湿法清洗或现场清扫后,需要在继续制备晶片之前对腔室内表面进行预涂敷。在采用双腔室的现有方法中,需要分别进行两次预涂敷工艺。在进行钛淀积的腔室中,预涂敷工艺包括在对钛进行完PECVD工艺后利用氨气进行低温退火,以便在腔室内表面上包敷约3800埃的氮化钛层。在进行氮化钛淀积的腔室中,预涂敷工艺包括氮化钛的CVD工艺,以便在腔室内表面上包敷约5000埃的氮化钛层。由于两个预涂敷工艺均在腔室内表面上产生基本相同的薄膜层,所以每一种预涂敷工艺均可用于对本发明中的单一腔室内表面进行预涂敷。优选的对腔室进行预涂敷或修整的方法在申请号为No.09/063,196的悬而未决美国专利申请中进行了描述,其中该专利申请是1998年4月20日提出的,其发明名称为“对Ti-PECVD工艺腔室进行钝化与稳定的方法以及Ti-PECVD/TiN-CVD组合加工方法与设备(Method of Passivating and Stabilizing a Ti-PECVD Process Chamberand Combined Ti-PECVD/TiN-CVD Processing Method and Apparatus)”,在此也作为参考而结合到本发明中,接着进行热CVD氮化钛预涂敷工艺。
在本发明的最佳实施例中包括有在整个单一腔室Ti/TiN淀积过程中保持恒定的基体温度、莲蓬式喷头温度以及压力,以达到最优的工艺一体化并降低清扫频率,本发明的一个特征在于通过利用钛的PECVD工艺,接着进行等离子体氮化工艺,随后再进行氮化钛的热CVD工艺从而实现单腔室Ti/TiN的一体化工艺。在此工艺中,虽然在较低的莲蓬式喷头温度下会因为利用PECVD-Ti工艺进行淀积的薄膜粘附性很低,从而必须对腔室内表面进行频繁地清扫,但是较低的莲蓬式喷头温度,即相当于150℃左右至250℃左右的温度,也可以在对氮化钛进行热CVD工艺的过程中得以利用。因此使用与钛的PECVD工艺中同样高的莲蓬式喷头温度有助于避免频繁的清扫。
虽然已经通过对其实施例的描述对本发明进行了说明,并且已经对该实施例的许多细节进行了描述,但它们并非用于限定或者以任何方式将所附权利要求的范围限制于这些细节。对于领域技术人员来说附加的优点和改动将是显而易见的。因而本发明在广度方面并不局限于所示出和所描述的特定细节,典型设备与方法,以及示意性的示例。因此,在不脱离申请人总的发明构思的前提下可以对这些细节进行改动。
Claims (31)
1.一种在一单一腔室中将一包含有钛和氮化钛薄膜的堆叠层淀积在一晶片表面上的方法,包括如下步骤:
将一具有一晶片表面的基体放置在反应室中,并与一莲蓬式喷头保持间隔;
通过在所述腔室中形成由卤化钛和氢气组成的混合气体的第一等离子体,将一钛薄膜淀积在该腔室中的晶片表面上;
通过形成从包含氨气、氮气及它们的混合气体的组中选择出的气体的第二等离子体,在所述腔室中对淀积的钛薄膜进行氮化;以及
通过利用包含有卤化钛和氮源气体的混合气体进行热CVD工艺,在所述腔室中在经过氮化的淀积钛薄膜上再淀积一层氮化钛薄膜;
其中淀积钛薄膜、对淀积的钛薄膜进行氮化和淀积氮化钛薄膜的步骤分别用温度425℃至700℃或者150℃至250℃的莲蓬式喷头执行的。
2.根据权利要求1中所述的方法,其特征在于,在淀积钛薄膜的步骤中晶片表面的温度至少为500℃。
3.根据权利要求2中所述的方法,其特征在于,在淀积钛薄膜的步骤中晶片表面的温度为从550℃至700℃之间的某一温度。
4.根据权利要求2中所述的方法,其特征在于,在淀积钛薄膜的步骤中晶片表面的温度至少为580℃。
5.根据权利要求1中所述的方法,其特征在于,在对淀积的钛薄膜进行氮化的步骤中晶片表面的温度至少为500℃。
6.根据权利要求2中所述的方法,其特征在于,在对淀积的钛薄膜进行氮化的步骤中晶片表面的温度与淀积钛薄膜步骤中的晶片表面温度相同。
7.根据权利要求6中所述的方法,其特征在于,在淀积一氮化钛薄膜的步骤中晶片表面的温度与淀积钛薄膜及对淀积的钛薄膜进行氮化步骤中的晶片表面温度相同。
8.根据权利要求1中所述的方法,其特征在于,在淀积氮化钛薄膜的步骤中晶片表面的温度至少为580℃。
9.根据权利要求1中所述的方法,其特征在于,在淀积一钛薄膜,对淀积的钛薄膜进行氮化以及淀积氮化钛薄膜的步骤中,晶片表面的温度保持在至少为580℃的一恒定温度。
10.根据权利要求1中所述的方法,其特征在于,在淀积钛薄膜的步骤中,所述腔室中的内部压力为1乇至10乇。
11.根据权利要求1中所述的方法,其特征在于,在淀积氮化钛薄膜的过程中,所述腔室中的内部压力为0.2乇至20乇。
12.根据权利要求1中所述的方法,其特征在于,在淀积钛薄膜,对淀积的钛薄膜进行氮化,以及淀积氮化钛薄膜的步骤中,所述腔室中的内部压力保持在1乇至10乇的一恒定内部压力。
13.根据权利要求12中所述的方法,其特征在于,所述的恒定内部压力为5乇。
14.根据权利要求1中所述的方法,其特征在于,所述莲蓬式喷头是金属的,并且在淀积钛薄膜,对淀积的钛薄膜进行氮化,以及淀积氮化钛薄膜的步骤中,莲蓬式喷头的温度保持在425℃至500℃之间的某一恒定的温度。
15.根据权利要求1中所述的方法,其特征在于,还包括在所述腔室中进行淀积钛薄膜,对淀积的钛薄膜进行氮化,以及在经过氮化的淀积钛薄膜上淀积氮化钛薄膜的全过程中,保持晶片表面为一恒定的温度,保持腔室内的总气压为一恒定的压力,并且保持莲蓬式喷头的温度为一恒定的温度。
16.根据权利要求1中所述的方法,其特征在于,还包括在所述腔室中进行钛薄膜淀积,对淀积的钛薄膜进行氮化,以及在经过氮化的淀积钛薄膜上淀积氮化钛薄膜的全过程中,保持晶片表面为至少580℃的一恒定温度,保持腔室内的总气压为1乇至10乇之间的一恒定压力,并且保持莲蓬式喷头的温度为425℃至500℃之间的一恒定温度。
17.根据权利要求1中所述的方法,其特征在于,还包括一初始步骤,即在对所述腔室表面进行清扫后利用氮化钛对至少一个腔室内表面进行预涂敷。
18.根据权利要求1中所述的方法,其特征在于,淀积氮化钛薄膜的步骤包括在四氯化钛不足条件下使得氮化钛淀积到第一厚度的第一热CVD淀积步骤,和在饱和四氯化钛条件下使得氮化钛淀积到最终厚度的第二热CVD淀积步骤。
19.根据权利要求1中所述的方法,其特征在于,晶片表面为硅,并且还包括在淀积钛薄膜的过程中在所述硅晶片表面与所淀积的钛薄膜之间形成一硅化钛层。
20.根据权利要求1中所述的方法,其特征在于,所述第一和第二等离子体均产生在晶片表面的25毫米范围内。
21.根据权利要求1中所述的方法,其特征在于,所述的卤化钛为四氯化钛。
22.一种在一单一腔室中将一包含有钛和氮化钛薄膜的堆叠层淀积在一基体上的方法,包括:
将一具有一表面的基体放置在反应室中,并与一莲蓬式喷头保持间隔;
利用等离子体增强化学气相淀积工艺在所述腔室中将一钛薄膜淀积在所述表面上;接着
通过形成从包含氨气,氮气或氨氮混合气体的组中选择的气体的等离子体,在所述腔室中对淀积的钛薄膜进行氮化;接着
利用一热CVD工艺在所述腔室中将一氮化钛薄膜淀积在经过氮化的淀积钛薄膜上;并且
在所述腔室中进行钛薄膜淀积,对淀积的钛薄膜进行氮化,以及在经过氮化的淀积钛薄膜上淀积氮化钛薄膜的全过程中,保持所述表面为一至少580℃的恒定温度,保持所述腔室中的总气压为1乇至10乇之间的一恒定压力,并且保持莲蓬式喷头的温度为一至少425℃的恒定温度。
23.根据权利要求22中所述的方法,其特征在于,所述莲蓬式喷头为金属的,并且其温度保持在425℃至500℃之间的一恒定温度。
24.根据权利要求22中所述的方法,其特征在于,莲蓬式喷头的温度保持在500℃至700℃之间的一恒定温度,并且其中该莲蓬式喷头上包括有能够在500℃以上温度抵抗腐蚀的表面材料。
25.根据权利要求22中所述的方法,其特征在于,在所述腔室中将氮化钛薄膜淀积到经过氮化的淀积钛薄膜上的步骤包括:
在一初始步骤中在卤化钛以第一流速流动的卤化钛不足的状况下利用热CVD工艺对氮化钛进行淀积,其中卤化钛被稀释在包括含氮气体的气流中;并且
在初始步骤中对氮化钛进行淀积之后,将卤化钛的流速增大到饱和状态下的流速,从而在第二步骤中将氮化钛淀积到初始步骤中淀积的氮化钛上。
26.根据权利要求22中所述的方法,其特征在于,在所述腔室中将氮化钛薄膜淀积在经过氮化的淀积钛薄膜上的步骤包括:
在一初始步骤中利用四卤化钛不足条件下的CVD工艺对氮化钛薄膜进行淀积,四卤化钛以8sccm的流速流动,氨气以80sccm的流速流动,而作为稀释剂的氮气以每分钟1升的流速流动,并且其压力为5乇,从而可以形成100至500埃厚的氮化钛层;并且接着
将四卤化钛的流速增大到饱和状态下30sccm的流速,并且氨气和氮气的流速保持恒定,从而在所述薄层上形成另外一氮化钛层。
27.根据权利要求22中所述的方法,其特征在于,钛的PECVD工艺包括在所述腔室中形成包括卤化钛和氢气的混合气体的第一等离子体,其中该第一等离子体形成于基体表面25毫米的范围内。
28.根据权利要求22中所述的方法,其特征在于,在氮化过程中该等离子体形成于基体表面上25毫米的范围内。
29.根据权利要求22中所述的方法,其特征在于,基体表面的温度不超过700℃。
30.根据权利要求22中所述的方法,其特征在于,还包括在对所述腔室进行清扫后利用氮化钛在至少一个腔室内表面上进行预涂敷的步骤。
31.根据权利要求22中所述的方法,其特征在于,所述基体表面为硅,并且还包括在钛薄膜淀积的过程中,在硅基体表面与所淀积的钛薄膜之间形成一硅化钛层。
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US5416045A (en) | 1993-02-18 | 1995-05-16 | Micron Technology, Inc. | Method for chemical vapor depositing a titanium nitride layer on a semiconductor wafer and method of annealing tin films |
JPH06349774A (ja) * | 1993-06-08 | 1994-12-22 | Sony Corp | 埋込みプラグの形成方法 |
WO1995034092A1 (en) * | 1994-06-03 | 1995-12-14 | Materials Research Corporation | A method of nitridization of titanium thin films |
US5975912A (en) | 1994-06-03 | 1999-11-02 | Materials Research Corporation | Low temperature plasma-enhanced formation of integrated circuits |
JPH10508656A (ja) * | 1994-10-11 | 1998-08-25 | ゲレスト インコーポレーテツド | コンフオーマルなチタン系フイルムおよびその製造方法 |
JP3050152B2 (ja) * | 1997-01-23 | 2000-06-12 | 日本電気株式会社 | 半導体装置の製造方法 |
US5926737A (en) * | 1997-08-19 | 1999-07-20 | Tokyo Electron Limited | Use of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processing |
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2000
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- 2000-04-19 EP EP00926143A patent/EP1090417A1/en not_active Withdrawn
- 2000-04-19 WO PCT/US2000/010552 patent/WO2000063959A1/en active IP Right Grant
- 2000-04-19 JP JP2000612993A patent/JP3782938B2/ja not_active Expired - Fee Related
- 2000-04-19 KR KR10-2000-7014441A patent/KR100428521B1/ko not_active IP Right Cessation
- 2000-04-20 TW TW089107467A patent/TW463242B/zh not_active IP Right Cessation
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CN1304549A (zh) | 2001-07-18 |
KR100428521B1 (ko) | 2004-04-29 |
KR20010053027A (ko) | 2001-06-25 |
JP3782938B2 (ja) | 2006-06-07 |
JP2002542399A (ja) | 2002-12-10 |
EP1090417A1 (en) | 2001-04-11 |
US6274496B1 (en) | 2001-08-14 |
WO2000063959A1 (en) | 2000-10-26 |
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