JP5188496B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
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Description
本発明の第4の態様は、基板(2)をプラズマにより処理するプラズマ処理方法であって、真空容器(3)の底部側に前記基板を配置し、前記基板と対向する前記真空容器の上部開口に、前記真空容器によって下面(7d)が支持される環状の外周部(7a)と、平面視で前記外周部によって囲まれた領域の中央に位置する中央部(7b)と、前記中央部から前記外周部まで放射状に延びる複数の梁部(7c)とを備え、前記外周部、前記中央部、及び前記梁部で囲まれた領域が窓部(30)を構成する梁状構造物(7)を配置し、前記梁状構造物の上面(7g)で下面(8a)が支持されるように誘電体板(8)を配置し、前記誘電体板の上面側にプラズマ発生のためのスパイラルコイル(9)を配置し、前記梁状構造物に下向きに設けられた、前記基板に向いた俯角を有する複数のプロセスガス導入口(31,36)から前記真空容器内にプロセスガスを噴出し、前記梁状構造物の前記窓部に臨むように上向きに設けられ、前記誘電体板に向いた仰角を有する複数の摩耗防止ガス導入口(41,56)から前記誘電体板の下面に向けて摩耗防止ガスを噴出し、前記プロセスガス導入口から前記プロセスガスを噴出し、かつ前記摩耗防止ガス導入口から前記摩耗防止ガスを噴出しつつ、前記真空容器内を排気して前記真空容器内を一定圧力に維持し、前記スパイラルコイルに高周波電力を投入して前記真空容器内にプラズマを発生させて前記基板を処理し、前記プロセスガス導入口と前記磨耗防止ガス導入口のうちのいずれか一方が形成された複数の導入口部材(43,37)が、前記梁状構造物に交換可能に取り付けられていることを特徴とする、プラズマ処理方法を提供する。
図1及び図2は本発明の実施形態に係るICP(誘導結合プラズマ)型のドライエッチング装置1を示す。ドライエッチング装置1は、その内部に基板2が収容される処理室を構成するチャンバ(真空容器)3を備える。チャンバ3は、上部が開口したチャンバ本体4と、このチャンバ本体4の上部開口を密閉する蓋体6を備える。チャンバ本体4には基板2を搬入出するためのゲート(図示せず)が設けられている。蓋体6はチャンバ本体4の側壁上端に支持された梁状スペーサ(梁状構造物)7と、この梁状スペーサ7に支持されて天板として機能する円板状の誘電体板8を備える。
図10から図13に示す本発明の第2実施形態のICP型のドライエッチング装置1は、プロセスガスの噴出は梁状スペーサ7の外周部7aに設けたプロセスガス導入口31のみから行う一方、希ガスの噴出は梁状スペーサ7の中央部7bに設けた希ガス導入口61,62のみから行われる。
図14に示す本発明の第3実施形態のドライエッチング装置1は、プロセスガスの噴出は梁状スペーサの中央部7bに設けたプロセスガス導入口36のみから行う一方、希ガスの噴出は梁状スペーサ7の外周部7aに設けた希ガスガス導入口41のみから行う構成としている。
図15及び図16に示す本発明の第4実施形態のドライエッチング装置1は、梁状スペーサ7の外周部7aと梁部7cにプロセスガス導入口71,73を備えている。
図17に示すように、梁状スペーサ7の外周部7a、中央部7b、及び梁部7cに平面視で窓部30の中央に向くように希ガス導入口41,62,71を設けてもよい。これらの希ガス導入口41,62,71は第1から第4実施形態と同様に誘電体板8(例えば図1参照)の下面に向いた仰角θeを有する。
図18に示す本発明の第6実施形態のドライエッチング装置1は、第1実施形態における希ガス供給源22(図1参照)に代えて酸素ガス(O2ガス)供給源142を備え、この酸素ガス供給源142から第1実施形態における希ガス導入口41と同一構造の酸素ガス導入口(摩耗防止ガス導入口)141から高密度プラズマ生成領域42の近傍の誘電体板8の下面8aに向けて酸素ガスが噴出される。そのため、チャンバ3内の他の領域と比較して誘電体板8の直下の窓部30における酸素ガスの分圧が相対的に高くなる。すなわち誘電体板8の直下の窓部30における酸素ガスのガス密度が高くなり、誘電体板8の下面8aのエッチングないしは摩耗が効果的に抑制ないしは防止される。
図19から図23Cは本発明の第7実施形態に係るICP型のドライエッチング装置1を示す。本実施形態のドライエッチング装置1は、第1実施形態(図1から図8)と同様であるが、プロセスガス導入口31A〜31Cの俯角が互いに異なる点と、梁状スペーサ7の中央部7bのプロセスガス導入口36を備えていない点で相違する。梁状スペーサ7の外周部7aに希ガス導入口41が設けられている点を含む本実施形態のその他の構成は、第1実施形態と同様である。図19から図23Cにおいて、第1実施形態と同一の要素には同一の符号を付している。
図25及び図26A〜26Cに示す本発明の第8実施形態では、ガス流路溝7kは、下側部分7mの下側にさらに幅狭の底側部分7rを備える。下側部分7mと底側部分7rとはOリング25Cによって遮断されている。従って、ガス流路溝7kは、3つの環状ガス流路33A,33B,33Cに分割されている。環状ガス流路33A〜33Cは、互いに遮断された別系統の導入路34A〜34Cを介して、対応するガス供給源に接続されている。具体的には、環状ガス流路33A,33Cは、それぞれ導入流路34A,34Cを介して別個のプロセスガス供給源21A,21Bに接続されている。また、環状ガス流路33Bは、独立した導入流路34Dを介して希ガス供給源22に接続されている。
図27及び図28に示す本発明の第9実施形態では、第8実施形態と同様に、梁状スペーサ7にそれぞれ別個の希ガス供給源22及びプロセスガス供給源21A,21Bに接続された3つの環状ガス流路33A〜33Cが設けられている。
図35に示す本発明の第10実施形態のドライエッチング装置は、梁状スペーサ7に代えて平面視で概ね円筒状の枠体(支持構造物)117を備える。具体的には、チャンバ本体4の上部開口を密閉する蓋体6は、チャンバ本体4の側壁上端に支持された枠体117と、この枠体117に外周縁付近の下面が支持された円板状の誘電体板8を備える。スペース7で囲まれた領域は、基板サセプタ側から見て誘電体板8の下面8aが露出している窓部118を構成する。枠体117(第1から第9実施形態における梁状スペーサ7の外周部7aに相当する。)に設けられたプロセスガス導入口31A〜31Bと希ガス導入口41から、プロセスガスと希ガスがそれぞれチャンバ3内に導入される。
2 基板
3 チャンバ
4 チャンバ本体
5 排気口
6 蓋体
7 梁状スペーサ
7a 外周部
7b 中央部
7c 梁部
7d 下面
7e,7f 溝
7g 上面
7h 溝
7i 凹部
7j 内側側壁面
7k ガス流路溝
7m 第1部分
7n 第2部分
7p 収容凹部
8 誘電体板
8a 下面
9 IPCコイル
11 導電体
12 マッチング回路
13,16 高周波電源
14 基板サセプタ
17 冷媒循環装置
18 伝熱ガス循環装置
21 プロセスガス供給源
22 希ガス供給源
23 コントローラ
24 真空排気装置
25A,25B Oリング
26,27,28 Oリング
29 弾性部材
30 窓部
31,36,71,73 プロセスガス導入口
33A,33B 環状ガス流路
33a 内周壁
33b 外周壁
34A,34B 導入流路
37 導入口プレート
37a 貫通孔
37b 上面
37c 凹部
37d 下面
37e 環状溝
38 ガス分配室
39 入口ガス流路
40 ガス流路
41 希ガス導入口
42 高密度プラズマ発生領域
43 希ガス導入口チップ
43a 雄ねじ部
43b 頭部
43c 凹部
44 プロセスガス導入口チップ
50 取付孔
50a 入口部
50b 雌ねじ部
50c 出口部
50d,50e 座部
51 ねじ
52 Oリング
61,62 希ガス導入口
72 ガス流路
141 酸素ガス導入口
142 酸素ガス供給源
Claims (9)
- 内部に基板(2)が配置された真空容器(3)と、
前記基板と対向する前記真空容器の上部開口に配置され、前記真空容器によって下面(7d)が支持される環状の外周部(7a)と、平面視で前記外周部によって囲まれた領域の中央に位置する中央部(7b)と、前記中央部から前記外周部まで放射状に延びる複数の梁部(7c)とを備え、前記外周部、前記中央部、及び前記梁部で囲まれた領域が窓部(30)を構成する梁状構造物(7)と、
前記梁状構造物の上面(7g)に下面(8a)が支持される誘電体板(8)と、
前記誘電体板の上面側に複数の導電体(11)を螺旋状に配置してなり、高周波電力が投入されるプラズマ発生のためのスパイラルコイル(9)と、
前記梁状構造物の前記外周部の前記窓部に臨む面(7j)に下向きに設けられた、前記基板に向いた俯角を有する複数のプロセスガス導入口(31,36,71,73)と、
前記プロセスガス導入口にプロセスガスを供給して噴出させるプロセスガス供給源(21)と、
前記梁状構造物の前記窓部に臨むように上向きに設けられ、前記誘電体板の下面近傍に形成された高密度プラズマ生成領域に向いた仰角を有する複数の摩耗防止ガス導入口(41,61,62,141)と、
前記摩耗防止ガス導入口に摩耗防止ガスを供給して噴出させる摩耗防止ガス供給源(22,142)と
を備えることを特徴とする、プラズマ処理装置。 - 前記摩耗防止ガス供給源は、前記摩耗防止ガス導入口に希ガスを供給して噴出させる希ガス供給源であることを特徴とする、請求項1に記載のプラズマ処理装置。
- 前記希ガスは、ヘリウム、アルゴン、キセノン、及びネオンからなる群のうちの少なくとも1種類を含むことを特徴とする、請求項2に記載のプラズマ処理装置。
- 前記摩耗防止ガス供給源は、前記第2のガス導入口に酸素ガスを供給して噴出させる酸素ガス供給源であることを特徴とする、請求項1に記載のプラズマ処理装置。
- 前記プロセスガス導入口は、少なくとも2種類の俯角(θd1,θd2,θd3)を有するものを含むことを特徴とする、請求項1に記載のプラズマ処理装置。
- 前記プロセスガス導入口は、
前記基板の中心領域(2a)に向いた第1の俯角(θd1)を有する第1のプロセスガス導入口(31A)と、
前記基板の外周領域(2b)に向いた第2の俯角(θd2)を有する第2のプロセスガス導入口(31B)と
を含むことを特徴とする、請求項5に記載のプラズマ処理装置。 - 内部に基板(2)が配置された真空容器(3)と、
前記基板と対向する前記真空容器の上部開口に配置され、前記真空容器によって下面(7d)が支持される環状の外周部(7a)と、平面視で前記外周部によって囲まれた領域の中央に位置する中央部(7b)と、前記中央部から前記外周部まで放射状に延びる複数の梁部(7c)とを備え、前記外周部、前記中央部、及び前記梁部で囲まれた領域が窓部(30)を構成する梁状構造物(7)と、
前記梁状構造物の上面(7g)に下面(8a)が支持される誘電体板(8)と、
前記誘電体板の上面側に複数の導電体(11)を螺旋状に配置してなり、高周波電力が投入されるプラズマ発生のためのスパイラルコイル(9)と、
前記梁状構造物に下向きに設けられた、前記基板に向いた俯角を有する複数のプロセスガス導入口(31,36,71,73)と、
前記プロセスガス導入口にプロセスガスを供給して噴出させるプロセスガス供給源(21)と、
前記梁状構造物の前記窓部に臨むように上向きに設けられ、前記誘電体板に向いた仰角を有する複数の摩耗防止ガス導入口(41,61,62,141)と、
前記摩耗防止ガス導入口に摩耗防止ガスを供給して噴出させる摩耗防止ガス供給源(22,142)と
を備え、
前記梁状構造物に交換可能に取り付けられ、それぞれ前記プロセスガス導入口と摩耗防止ガス導入口のうちのいずれか一方が形成された複数の導入口部材(43,37)を備えることを特徴とする、プラズマ処理装置。 - 基板(2)をプラズマにより処理するプラズマ処理方法であって、
真空容器(3)の底部側に前記基板を配置し、
前記基板と対向する前記真空容器の上部開口に、前記真空容器によって下面(7d)が支持される環状の外周部(7a)と、平面視で前記外周部によって囲まれた領域の中央に位置する中央部(7b)と、前記中央部から前記外周部まで放射状に延びる複数の梁部(7c)とを備え、前記外周部、前記中央部、及び前記梁部で囲まれた領域が窓部(30)を構成する梁状構造物(7)を配置し、
前記梁状構造物の上面(7g)で下面(8a)が支持されるように誘電体板(8)を配置し、
前記誘電体板の上面側にプラズマ発生のためのスパイラルコイル(9)を配置し、
前記梁状構造物の前記外周部の前記窓部に臨む面(7j)に下向きに設けられた、前記基板に向いた俯角を有する複数のプロセスガス導入口(31,36)から前記真空容器内にプロセスガスを噴出し、
前記梁状構造物の前記窓部に臨むように上向きに設けられ、前記誘電体板に向いた仰角を有する複数の摩耗防止ガス導入口(41,56)から前記誘電体板の下面に向けて摩耗防止ガスを噴出し、
前記プロセスガス導入口から前記プロセスガスを噴出し、かつ前記摩耗防止ガス導入口から前記摩耗防止ガスを噴出しつつ、前記真空容器内を排気して前記真空容器内を一定圧力に維持し、
前記スパイラルコイルに高周波電力を投入して前記真空容器内にプラズマを発生させ、前記誘電体板の下面近傍に形成された高密度プラズマ生成領域に向けて、前記磨耗防止ガス導入口から前記磨耗防止ガスを吹き付けつつ、前記基板を処理することを特徴とする、プラズマ処理方法。 - 基板(2)をプラズマにより処理するプラズマ処理方法であって、
真空容器(3)の底部側に前記基板を配置し、
前記基板と対向する前記真空容器の上部開口に、前記真空容器によって下面(7d)が支持される環状の外周部(7a)と、平面視で前記外周部によって囲まれた領域の中央に位置する中央部(7b)と、前記中央部から前記外周部まで放射状に延びる複数の梁部(7c)とを備え、前記外周部、前記中央部、及び前記梁部で囲まれた領域が窓部(30)を構成する梁状構造物(7)を配置し、
前記梁状構造物の上面(7g)で下面(8a)が支持されるように誘電体板(8)を配置し、
前記誘電体板の上面側にプラズマ発生のためのスパイラルコイル(9)を配置し、
前記梁状構造物に下向きに設けられた、前記基板に向いた俯角を有する複数のプロセスガス導入口(31,36)から前記真空容器内にプロセスガスを噴出し、
前記梁状構造物の前記窓部に臨むように上向きに設けられ、前記誘電体板に向いた仰角を有する複数の摩耗防止ガス導入口(41,56)から前記誘電体板の下面に向けて摩耗防止ガスを噴出し、
前記プロセスガス導入口から前記プロセスガスを噴出し、かつ前記摩耗防止ガス導入口から前記摩耗防止ガスを噴出しつつ、前記真空容器内を排気して前記真空容器内を一定圧力に維持し、
前記スパイラルコイルに高周波電力を投入して前記真空容器内にプラズマを発生させて前記基板を処理し、
前記プロセスガス導入口と前記磨耗防止ガス導入口のうちのいずれか一方が形成された複数の導入口部材(43,37)が、前記梁状構造物に交換可能に取り付けられていることを特徴とする、プラズマ処理方法。
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Publication number | Publication date |
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KR20100014501A (ko) | 2010-02-10 |
TW200849379A (en) | 2008-12-16 |
JPWO2008120459A1 (ja) | 2010-07-15 |
WO2008120459A1 (ja) | 2008-10-09 |
US20100089870A1 (en) | 2010-04-15 |
US8906249B2 (en) | 2014-12-09 |
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