WO2023013437A1 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- WO2023013437A1 WO2023013437A1 PCT/JP2022/028445 JP2022028445W WO2023013437A1 WO 2023013437 A1 WO2023013437 A1 WO 2023013437A1 JP 2022028445 W JP2022028445 W JP 2022028445W WO 2023013437 A1 WO2023013437 A1 WO 2023013437A1
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- WIPO (PCT)
- Prior art keywords
- antenna
- processing apparatus
- plasma processing
- antenna conductor
- shield
- Prior art date
Links
- 238000009832 plasma treatment Methods 0.000 title 1
- 239000004020 conductor Substances 0.000 claims abstract description 62
- 239000012212 insulator Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 description 18
- 230000005684 electric field Effects 0.000 description 7
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000002294 plasma sputter deposition Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Definitions
- the present invention relates to a plasma processing apparatus that uses plasma to process an object to be processed.
- a plasma processing apparatus that generates plasma by passing a high-frequency current through an antenna and uses the plasma to process an object to be processed such as a substrate.
- the sputtering apparatus described in Patent Document 1 uses plasma to sputter a target to form a film on a substrate.
- the substrate and the target are held in a vacuum vessel that is evacuated and gas is introduced, and the plasma is generated by a plurality of linear antennas arranged along the surface of the substrate. be done.
- ICP inductively coupled plasma
- CCP capacitively coupled plasma
- An object of one aspect of the present invention is to realize a plasma processing apparatus or the like that can reduce generation of capacitively coupled plasma while using a linear antenna section.
- a plasma processing apparatus includes a vacuum vessel that accommodates an object to be processed, and a vacuum vessel that is provided inside the vacuum vessel to generate plasma inside the vacuum vessel.
- a linear antenna section for generating the antenna section comprising an antenna conductor through which a high frequency current flows, and a Faraday shield provided around at least a portion of the antenna conductor.
- FIG. 1 is a cross-sectional view schematically showing the configuration of a plasma processing apparatus according to one embodiment of the present invention
- FIG. It is a perspective view which shows roughly the structure of the antenna part in the said plasma processing apparatus.
- 3 is a cross-sectional view taken along line AA of FIG. 2;
- FIG. It is a perspective view which shows roughly the structure of the antenna part in the plasma processing apparatus which concerns on another embodiment of this invention.
- It is a perspective view which shows roughly the structure of the antenna part in the plasma processing apparatus which concerns on another embodiment of this invention.
- FIG. 1 is a cross-sectional view schematically showing the configuration of a plasma processing apparatus 1 according to this embodiment.
- the plasma processing apparatus 1 is an apparatus that uses plasma P to subject a substrate S to plasma processing.
- examples of the processing performed on the substrate S by the plasma processing apparatus 1 include film formation, etching, ashing, etc., by plasma CVD (Chemical Vapor Deposition) or plasma sputtering.
- the plasma processing apparatus 1 is a plasma CVD apparatus for film formation by plasma CVD, a plasma etching apparatus for etching, a plasma ashing apparatus for ashing, and a plasma sputtering apparatus for film formation by plasma sputtering. Also called a plasma sputtering apparatus.
- the plasma processing apparatus 1 includes a vacuum vessel 2, an antenna section 3, and a high frequency power supply 4.
- the vacuum container 2 is, for example, a metal container and is electrically grounded.
- a substrate S which is an object to be processed, is accommodated in the vacuum vessel 2 .
- the interior of the vacuum container 2 is evacuated by the evacuation device 6 , and a gas G corresponding to the content of the processing to be performed on the substrate S is introduced through the gas introduction port 21 .
- the gas G may be any type of gas generally used in the plasma processing apparatus 1, and specific components are not particularly limited.
- a substrate holder 8 for holding the substrate S is provided inside the vacuum vessel 2 .
- the substrate holder 8 may be provided with a heater for heating the substrate S, and may be applied with a bias voltage. If the plasma processing apparatus 1 is a plasma sputtering apparatus, a target is further arranged inside the vacuum vessel 2 .
- the antenna section 3 includes an antenna conductor 31 for plasma generation and an antenna cover 32 (first insulator) that covers the antenna conductor 31 .
- the antenna section 3 is linear and provided so as to face the substrate S within the vacuum vessel 2 .
- the antenna section 3 is arranged above the substrate S in the vacuum vessel 2 along the surface of the substrate S (for example, substantially parallel to the surface of the substrate S).
- the number of antenna units 3 arranged in the vacuum container 2 may be one or plural.
- the antenna conductor 31 is made of, for example, copper, aluminum, alloys thereof, stainless steel, or the like.
- the antenna conductor 31 is linear.
- the antenna conductor 31 may be cylindrical.
- the antenna conductor 31 can be cooled by flowing coolant such as cooling water through the hollow portion of the antenna conductor 31 .
- the antenna conductor 31 is not limited to the shape described above, and may have, for example, a solid shape without a hollow portion.
- One end 31a of the antenna conductor 31 passes through a wall opening 22 provided in one side wall 2a of the vacuum vessel 2, and the other end 31b of the antenna conductor 31 extends through the side wall 2a of the vacuum vessel 2. It penetrates through a wall opening 22 provided in the other side wall 2b facing the .
- Each wall opening 22 is provided with an insulator (for example, an insulating flange) 23, and the ends 31a and 31b of the antenna conductor 31 hermetically penetrate the insulator 23 using an O-ring or the like. It is supported by the vacuum vessel 2 via an insulator 23 . Thereby, the antenna conductor 31 is supported while being electrically insulated from the vacuum vessel 2 .
- the material of the insulator 23 is, for example, ceramics such as alumina, quartz, or the like, but is not limited to these.
- the antenna cover 32 is an insulator that protects the antenna conductor 31 .
- the antenna cover 32 of this embodiment is a linear tubular body that covers the antenna conductor 31 and is provided coaxially with the antenna conductor 31 . Both ends of the antenna cover 32 are supported by the insulator 23 or the antenna conductor 31 .
- the material of the antenna cover 32 is, for example, an insulator such as quartz, alumina, silicon nitride, silicon carbide, or silicon, but is not limited to these. Note that the antenna cover 32 may be an insulator that is formed and covered on the surface of the antenna conductor 31 .
- the high frequency power supply 4 is for supplying high frequency power to the antenna conductor 31 .
- the frequency of the high-frequency voltage applied to the antenna conductor 31 by the high-frequency power supply 4 is, for example, the general 13.56 MHz, but is not limited to this.
- the high-frequency power supply 4 is connected to one end 31a of the antenna conductor 31 via an impedance variable device 41.
- the other end 31 b of the antenna conductor 31 is electrically grounded, but may be connected to another antenna conductor 31 via another impedance variable device 41 .
- high-frequency power is supplied from the high-frequency power supply 4 to the antenna conductor 31 via the impedance variable device 41 , thereby causing a high-frequency current to flow through the antenna conductor 31 .
- plasma P is generated in the vacuum vessel 2 .
- the generated plasma P diffuses to the vicinity of the substrate S or the target, and the plasma P performs the above-described processing.
- FIG. 2 is a perspective view schematically showing the configuration of the antenna section 3. As shown in FIG. The upper part of FIG. 2 is a view of the antenna unit 3 viewed from above, and the lower part of FIG. 2 is a view of the antenna unit 3 viewed from the side. 3 is a cross-sectional view taken along the line AA of FIG. 2. FIG. Note that the impedance variable device 41 is omitted in FIG.
- the antenna section 3 of the present embodiment further includes a Faraday shield 33 (hereinafter abbreviated as "shield 33") 33.
- the shield 33 is provided on the outer surface of the antenna cover 32 and electrically grounded.
- the shield 33 may be directly grounded to the ground, or may be connected to the GND (ground) of the high frequency power supply 4 .
- the material of the shield 33 is a conductive metal such as copper, stainless steel, aluminum, etc., and is formed by vapor deposition, plating, attachment of a thin plate, or the like.
- the film thickness of the shield 33 may be any film thickness that allows current to flow, and is preferably 10 nm to 5 mm.
- the shield 33 has a plurality of ring portions 331 and a plurality of connection portions 332 .
- the plurality of ring portions 331 are arranged on a plane perpendicular to the axis of the antenna conductor 31 and are spaced apart from each other.
- a plurality of connecting portions 332 connect adjacent ring portions 331 .
- the plurality of connecting portions 332 are alternately arranged on the top and bottom of the antenna cover 32 . That is, each of the plurality of ring portions 331 is connected to two connection portions 332 from both sides, and the connection positions of the two connection portions 332 are symmetrical with respect to the center of the ring portion 331 .
- a slit portion 333 is formed by adjacent ring portions 331 and a connection portion 332 connecting the adjacent ring portions 331 .
- the antenna section 3 configured as described above, when a high-frequency current flows through the antenna conductor 31 , a high-frequency electric field and a high-frequency magnetic field are generated around the antenna conductor 31 . At this time, the high-frequency electric field induces movement of the charged particles inside the shield 33 , and the shield 33 reduces the high-frequency electric field. As a result, generation of capacitively coupled plasma can be reduced.
- the shield 33 of this embodiment reduces the induced current as compared with a shield covering the entire circumference of the antenna conductor 31 . As a result, the high-frequency magnetic field is less reduced by the shield 33, and the generation of the inductively coupled plasma P can be maintained.
- the two connection positions in the ring portion 331 are different.
- the portion between the connection positions in the ring portion 331 becomes a path for the induced current. Since the path is perpendicular to the current path of the antenna conductor 31, the electrical resistance of the path is effectively increased. Therefore, since the induced current is reduced, the high-frequency magnetic field is less reduced by the shield 33, and as a result, the generation of the inductively coupled plasma P can be reliably maintained. Also, ohmic heating in the shield 33 can be reduced.
- the two connection positions on the ring portion 331 are symmetrical with respect to the center of the ring portion 331 . This effectively maximizes the electrical resistance. Therefore, since the induced current is minimized, the high-frequency magnetic field is minimized by the shield 33, and as a result, the generation of the inductively coupled plasma P can be maintained more reliably. Also, ohmic heating in the shield 33 can be further reduced.
- the plurality of connecting portions 332 are arranged on the upper and lower portions of the antenna cover 32 , but may be arranged on both sides of the antenna cover 32 .
- the two connection positions in the ring portion 331 may be different, and may be asymmetric with respect to the center of the ring portion 331 .
- the shield 33 may be arranged inside the antenna cover 32 . That is, the shield 33 can be arranged at any position around the antenna conductor 31 and not electrically connected to the antenna conductor 31 .
- FIG. 2 Another embodiment of the invention is described with reference to FIG.
- the plasma processing apparatus 1 of this embodiment differs from the plasma processing apparatus 1 shown in FIGS. 1 to 3 in the configuration of the antenna section 3, and the other configurations are the same.
- FIG. 4 is a perspective view schematically showing the configuration of the antenna section 3, and is a view of the antenna section 3 viewed from above.
- the antenna section 3 of the present embodiment differs from the antenna section 3 shown in FIGS. 2 and 3 in that it further includes a shield cover 34 (second insulator), and other configurations are the same.
- the shield cover 34 is an insulator that protects the shield 33.
- the shield cover 34 of this embodiment is a linear tubular body that covers the shield 33 and is provided coaxially with the antenna conductor 31 . Both ends of the shield cover 34 are supported by the insulator 23 or the antenna cover 32 .
- the material of the shield cover 34 is the same as the material that can be used as the antenna cover 32 .
- the shield cover 34 may be an insulator formed and coated on the surfaces of the antenna cover 32 and the shield 33 .
- the shield 33 is covered with the shield cover 34 .
- the shield cover 34 it is possible to prevent metal particles from adhering to the slit portions 333 of the shield 33 to form a metal film, thereby preventing the adjacent ring portions 331 from being electrically connected outside the connection portion 332 .
- the shield 33 is formed on the outer surface of the antenna cover 32 in this embodiment, it may be formed on the inner surface of the shield cover 34 or may be formed inside the shield cover 34 .
- FIG. 3 Yet another embodiment of the invention is described with reference to FIG.
- the plasma processing apparatus 1 of this embodiment differs from the plasma processing apparatus 1 shown in FIGS. 1 to 4 in the configuration of the antenna section 3, and the other configurations are the same.
- FIG. 5 is a perspective view schematically showing the configuration of the antenna section 3, and is a view of the antenna section 3 viewed from above.
- the antenna section 3 of this embodiment differs from the antenna section 3 shown in FIG. 4 in that the shield 33 and the shield cover 34 are omitted in the central portion of the antenna section 3, and other configurations are the same. . That is, in this embodiment, the shield 33 and the shield cover 34 are provided at both ends of the antenna section 3 . Thus, shield 33 and shield cover 34 may be provided around a portion of antenna conductor 31 .
- the vacuum vessel 2 is grounded, and a high frequency voltage is applied to the antenna conductor 31 .
- the electric field strength tends to be higher in the area where the distance between the antenna conductor 31 and the vacuum vessel 2 is shorter than in other areas.
- shields 33 are provided at both ends of the antenna section 3 where the distance between the antenna conductor 31 and the vacuum vessel 2 is short. This makes it possible to reduce the strength of the electric field in the region where the distance between the antenna conductor 31 and the vacuum vessel 2 is short. As a result, generation of capacitively coupled plasma can be effectively reduced, and distribution of inductively coupled plasma P can be improved.
- the slit pitch of the shield 33 is the length represented by SP in FIG. 2
- the slit width of the shield 33 is the length represented by SW in FIG.
- the shield 33 of this example was made of SUS316, had a thickness of 10 ⁇ m, and had a slit width SW of less than 0.5 mm.
- the width (SP-SW) of the ring portion 331 is 15 mm or less, the reduction amount of the magnetic field intensity is small, which is desirable. Furthermore, it has been found that the amount of decrease in the magnetic field strength is even smaller when the width of the ring portion 331 is 5 mm or less, which is more desirable. Note that the lower limit of the width of the ring portion 331 is determined by various conditions such as manufacturing capacity and allowable electrical resistance.
- a plasma processing apparatus includes a vacuum vessel for accommodating an object to be processed therein, and a linear antenna section provided inside the vacuum vessel for generating plasma inside the vacuum vessel. and the antenna section includes an antenna conductor through which a high-frequency current flows, and a Faraday shield provided around at least a portion of the antenna conductor.
- the electric field generated in the antenna conductor is shielded by the Faraday shield, so propagation to the outside can be reduced. This can reduce the generation of capacitively coupled plasma.
- the Faraday shield may be provided at a position where the distance between the antenna conductor and the vacuum vessel is short. In this case, it is possible to reduce the intensity of the electric field in a region where the distance between the antenna conductor and the vacuum vessel is short. As a result, generation of capacitively coupled plasma can be effectively reduced.
- the Faraday shield is provided around the antenna conductor, and includes a plurality of ring portions separated from each other and adjacent ring portions. and a connecting portion for connecting.
- the Faraday shield has a smaller induced current than a shield that covers the entire circumference of the antenna conductor. generation can be maintained.
- the two connection portions connected from both sides of a certain ring portion have different connection positions with the certain ring portion.
- the portion between the connection positions in the certain ring portion becomes the path of the induced current. Since the path is perpendicular to the current path of the antenna conductor, the electrical resistance of the path is effectively increased. Therefore, the induced current generated by the high-frequency current in the antenna conductor is reduced, and as a result, the high-frequency magnetic field generated by the high-frequency current is less reduced by the Faraday shield.
- connection positions of the two connection portions are symmetrical with respect to the center of the ring portion.
- the electrical resistance is effectively maximized. Therefore, the induced current generated by the high-frequency current in the antenna conductor is minimized, and as a result, the reduction of the high-frequency magnetic field generated by the high-frequency current is minimized by the Faraday shield.
- the width of the ring portion is 15 mm or less. In this case, a decrease in the high frequency magnetic field can be suppressed.
- the lower limit of the width of the ring portion is determined by various conditions such as manufacturing capacity and allowable electrical resistance.
- the antenna section further includes a first insulator provided between the antenna conductor and the Faraday shield. In this case, conduction between the antenna conductor and the Faraday shield can be prevented.
- the antenna section may further include a second insulator covering the periphery of the Faraday shield.
- a second insulator covering the periphery of the Faraday shield.
- Plasma processing apparatus Vacuum chamber 2a, 2b Side wall 3 Antenna section 4 High-frequency power supply 6 Vacuum evacuation apparatus 8 Substrate holder 21 Gas introduction port 22 Wall opening 23 Insulator 31 Antenna conductors 31a, 31b End 32 Antenna cover (first insulation thing) 33 Faraday shield 34 Shield cover (second insulator) 41 impedance variable device 331 ring portion 332 connection portion 333 slit portion
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Abstract
Description
本発明の一実施形態について、図1~図3を参照して説明する。
図1は、本実施形態におけるプラズマ処理装置1の構成を模式的に示す断面図である。プラズマ処理装置1は、プラズマPを用いて基板Sにプラズマ処理を施す装置である。ここで、プラズマ処理装置1による基板Sに施す処理の例としては、プラズマCVD(Chemical Vapor Deposition)法またはプラズマスパッタリング法による膜形成、エッチング、アッシングなどが挙げられる。なお、プラズマ処理装置1は、プラズマCVD法によって膜形成を行う場合はプラズマCVD装置、エッチングを行う場合はプラズマエッチング装置、アッシングを行う場合はプラズマアッシング装置、プラズマスパッタリング法によって膜形成を行う場合はプラズマスパッタリング装置とも呼ばれる。
図2は、アンテナ部3の構成を概略的に示す斜視図である。図2の上段は、アンテナ部3を上方から見た図であり、図2の下段は、アンテナ部3を側方から見た図である。図3は、図2のA-A線における矢視断面図である。なお、図2では、インピーダンス可変器41を省略している。
なお、本実施形態では、複数の接続部332は、アンテナカバー32の上部および下部に配置されているが、アンテナカバー32の両側部に配置されてもよい。また、リング部331における2つの上記接続位置は、異なっていればよく、リング部331の中心に対し非対称であってもよい。
本発明の別の実施形態について、図4を参照して説明する。本実施形態のプラズマ処理装置1は、図1~図3に示すプラズマ処理装置1に比べて、アンテナ部3の構成が異なり、その他の構成は同様である。
なお、本実施形態では、シールド33は、アンテナカバー32の外面に形成されているが、シールドカバー34の内面に形成されてもよいし、シールドカバー34の内部に形成されてもよい。
本発明のさらに別の実施形態について、図5を参照して説明する。本実施形態のプラズマ処理装置1は、図1~図4に示すプラズマ処理装置1に比べて、アンテナ部3の構成が異なり、その他の構成は同様である。
図1~図3に示すプラズマ処理装置1について、シールド33の寸法を種々に変更した実施例について説明する。ここで、シールド33のスリットピッチは、図2にてSPで表される長さであり、シールド33のスリット幅は、図2にてSWで表される長さである。また、本実施例のシールド33は、材質がSUS316であり、厚さが10μmであり、スリット幅SWが0.5mm未満であった。
本発明の態様1に係るプラズマ処理装置は、被処理物を内部に収容する真空容器と、前記真空容器の内部に設けられ、前記真空容器の内部にプラズマを発生させるための直線状のアンテナ部と、を備え、該アンテナ部は、高周波電流が流れるアンテナ導体と、該アンテナ導体の少なくとも一部の周囲に設けられたファラデーシールドと、を備える構成である。
2 真空容器
2a、2b 側壁
3 アンテナ部
4 高周波電源
6 真空排気装置
8 基板ホルダ
21 ガス導入口
22 壁面開口部
23 絶縁物
31 アンテナ導体
31a、31b 端部
32 アンテナカバー(第1絶縁物)
33 ファラデーシールド
34 シールドカバー(第2絶縁物)
41 インピーダンス可変器
331 リング部
332 接続部
333 スリット部
Claims (8)
- 被処理物を内部に収容する真空容器と、
前記真空容器の内部に設けられ、前記真空容器の内部にプラズマを発生させるための直線状のアンテナ部と、を備え、
該アンテナ部は、
高周波電流が流れるアンテナ導体と、
該アンテナ導体の少なくとも一部の周囲に設けられたファラデーシールドと、を備えるプラズマ処理装置。 - 前記ファラデーシールドは、前記アンテナ導体と前記真空容器との距離が近い位置に設けられている、請求項1に記載のプラズマ処理装置。
- 前記ファラデーシールドは、
前記アンテナ導体の周囲に設けられ、互いに離間している複数のリング部と、
隣り合うリング部どうしを接続する接続部と、を備える請求項1または2に記載のプラズマ処理装置。 - 或るリング部の両側からそれぞれ接続する2つの接続部は、前記或るリング部との接続位置が異なる、請求項3に記載のプラズマ処理装置。
- 前記2つの接続部の接続位置は、前記リング部の中心に対し互いに対称である、請求項4に記載のプラズマ処理装置。
- 前記リング部の幅は15mm以下である、請求項3から5の何れか1項に記載のプラズマ処理装置。
- 前記アンテナ部は、前記アンテナ導体と前記ファラデーシールドとの間に設けられた第1絶縁物をさらに備える、請求項1から6の何れか1項に記載のプラズマ処理装置。
- 前記アンテナ部は、前記ファラデーシールドの周囲を覆う第2絶縁物をさらに備える、請求項1から7の何れか1項に記載のプラズマ処理装置。
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JP2001297899A (ja) * | 2000-04-13 | 2001-10-26 | Tohoku Techno Arch Co Ltd | プラズマ処理装置 |
JP2007126742A (ja) * | 2005-11-01 | 2007-05-24 | Applied Films Corp | マイクロ波線形放電源の電力機能ランピングのためのシステムおよび方法 |
KR20090025475A (ko) * | 2007-09-06 | 2009-03-11 | 주식회사 에폰 | 이.씨.알. 플라즈마 성막 장비, 그 장비를 이용한 막증착방법 및 투명도전막을 가지는 터치패널 기판 |
US20110076420A1 (en) * | 2008-01-30 | 2011-03-31 | Applied Materials, Inc. | High efficiency low energy microwave ion/electron source |
JP2018156864A (ja) * | 2017-03-17 | 2018-10-04 | 日新電機株式会社 | プラズマ処理装置 |
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JP7061257B2 (ja) | 2017-03-17 | 2022-04-28 | 日新電機株式会社 | スパッタリング装置 |
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JP2001297899A (ja) * | 2000-04-13 | 2001-10-26 | Tohoku Techno Arch Co Ltd | プラズマ処理装置 |
JP2007126742A (ja) * | 2005-11-01 | 2007-05-24 | Applied Films Corp | マイクロ波線形放電源の電力機能ランピングのためのシステムおよび方法 |
KR20090025475A (ko) * | 2007-09-06 | 2009-03-11 | 주식회사 에폰 | 이.씨.알. 플라즈마 성막 장비, 그 장비를 이용한 막증착방법 및 투명도전막을 가지는 터치패널 기판 |
US20110076420A1 (en) * | 2008-01-30 | 2011-03-31 | Applied Materials, Inc. | High efficiency low energy microwave ion/electron source |
JP2018156864A (ja) * | 2017-03-17 | 2018-10-04 | 日新電機株式会社 | プラズマ処理装置 |
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CN116998225A (zh) | 2023-11-03 |
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