JP4904202B2 - プラズマ反応器 - Google Patents
プラズマ反応器 Download PDFInfo
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- JP4904202B2 JP4904202B2 JP2007135871A JP2007135871A JP4904202B2 JP 4904202 B2 JP4904202 B2 JP 4904202B2 JP 2007135871 A JP2007135871 A JP 2007135871A JP 2007135871 A JP2007135871 A JP 2007135871A JP 4904202 B2 JP4904202 B2 JP 4904202B2
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- radio frequency
- frequency antenna
- vacuum chamber
- shower head
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning In General (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
図1は本発明の第1の実施形態に係るプラズマ反応器の断面図である。
図8は本発明の第2の実施形態に係るプラズマ反応器を示す断面図である。図9は図8のプラズマ反応器の上部に設けられた無線周波数アンテナとガスシャワーヘッドの配置構造を示す説明図である。
図11は本発明の第3の実施形態に係るプラズマ反応器を示す断面図である。
図18は本発明の第4の実施形態に係るプラズマ反応器の断面図であり、図19は図18のプラズマ反応器の上部に設けられた無線周波数アンテナとガスシャワーヘッドの配置構造を示す説明図である。
図22は本発明の第5の実施形態に係るプラズマ反応器の断面図である。
110 下部本体
111 基板支持台
112 非処理基板
113 ガス出口
114、122、124、125 Oリング
115 真空ポンプ
120 上部カバー
121 ガス入口
123 上部空間
120、130 誘導体ウィンドウ
132 誘電体壁
140 ガスシャワーヘッド
142 ファラディシールド
145 ガス分配板
146 シリコン平板
150 マグネチックコア
151 無線周波数アンテナ
152 磁束出入口
160、162 電源供給源
161、163 インピーダンス整合器
164 電源分配部
170 電力調節部
171a 可変キャパシタ
171b 可変インダクタ
Claims (8)
- 被処理基板が搭載される基板支持台を有する真空チャンバと;
前記真空チャンバの内部にガスを供給するガスシャワーヘッドと;
前記真空チャンバの上部に設けられる誘電体ウィンドウと;
前記誘電体ウィンドウ上部で前記ガスシャワーヘッドの周辺に設けられ、螺旋型構造を有する無線周波数アンテナと;
前記無線周波数アンテナを覆うように前記誘電体ウィンドウの上部に設けられるマグネチックコアと;
前記無線周波数アンテナに連結され無線周波数を供給する第1の電源供給源と;
前記基板支持台に無線周波数を供給する第2の電源供給源と;
前記第2の電源供給源の周波数と異なる周波数の無線周波数を前記基板支持台に供給する第3の電源供給源と;
を含み、
前記ガスシャワーヘッドと前記基板支持台は前記真空チャンバ内部のプラズマに容量的に結合され、前記無線周波数アンテナは前記真空チャンバの内部のプラズマに誘導的に結合され、
前記誘電体ウィンドウは中心部に開口部を有し、前記ガスシャワーヘッドは前記誘電体ウィンドウの開口部に設けられ、
前記マグネチックコアは、複数の蹄鉄形状のフェライトコア片を組立てて構成されることを特徴とする、プラズマ反応器。 - 前記ガスシャワーヘッドは前記真空チャンバの内部で前記基板支持台の上部に設けられることを特徴とする、請求項1に記載のプラズマ反応器。
- 前記マグネチックコアは、前記無線周波数アンテナによって発生した磁束を収束させ、前記磁束を前記誘電体ウィンドウを介して前記真空チャンバの内部に誘導させるための磁束出入口が前記誘電体ウィンドウの上部に設けられるマグネチックコアを含むことを特徴とする、請求項1に記載のプラズマ反応器。
- 前記無線周波数アンテナと前記誘電体ウィンドウとの間に設けられるファラディシールドを含むことを特徴とする、請求項1に記載のプラズマ反応器。
- 前記誘電体ウィンドウ、前記無線周波数アンテナ、および前記マグネチックコアは前記真空チャンバの内側に設けられ、前記真空チャンバの上部を覆う上部カバーを含むことを特徴とする、請求項1に記載のプラズマ反応器。
- 前記誘電体ウィンドウは前記真空チャンバの上部カバーとして機能し、前記誘電体ウィンドウの上部で前記無線周波数アンテナと前記マグネチックコアを全体的に覆うカバー部材を含むことを特徴とする、請求項1に記載のプラズマ反応器。
- 前記真空チャンバの内壁に沿って設けられる誘電体壁を含むことを特徴とする、請求項1に記載のプラズマ反応器。
- 前記ガスシャワーヘッドは前記真空チャンバの内部領域に接して多数のガス噴射孔が形成されたシリコン平板を含むことを特徴とする、請求項1に記載のプラズマ反応器。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060045833A KR100864111B1 (ko) | 2006-05-22 | 2006-05-22 | 유도 결합 플라즈마 반응기 |
KR10-2006-0045509 | 2006-05-22 | ||
KR1020060045509A KR100753869B1 (ko) | 2006-05-22 | 2006-05-22 | 복합형 플라즈마 반응기 |
KR10-2006-0045478 | 2006-05-22 | ||
KR1020060045478A KR100753868B1 (ko) | 2006-05-22 | 2006-05-22 | 복합형 플라즈마 반응기 |
KR10-2006-0045833 | 2006-05-22 |
Publications (2)
Publication Number | Publication Date |
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JP2007317661A JP2007317661A (ja) | 2007-12-06 |
JP4904202B2 true JP4904202B2 (ja) | 2012-03-28 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007135871A Expired - Fee Related JP4904202B2 (ja) | 2006-05-22 | 2007-05-22 | プラズマ反応器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080124254A1 (ja) |
EP (1) | EP1860680A1 (ja) |
JP (1) | JP4904202B2 (ja) |
CN (1) | CN104821269B (ja) |
TW (1) | TWI435663B (ja) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4550507B2 (ja) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US20090004873A1 (en) * | 2007-06-26 | 2009-01-01 | Intevac, Inc. | Hybrid etch chamber with decoupled plasma controls |
KR101021480B1 (ko) * | 2007-12-07 | 2011-03-16 | 성균관대학교산학협력단 | 페라이트 구조체를 구비하는 플라즈마 소스 및 이를채택하는 플라즈마 발생장치 |
KR101446185B1 (ko) * | 2008-01-03 | 2014-10-01 | 최대규 | 고효율 유도 결합 플라즈마 반응기 |
US8299391B2 (en) * | 2008-07-30 | 2012-10-30 | Applied Materials, Inc. | Field enhanced inductively coupled plasma (Fe-ICP) reactor |
KR101615493B1 (ko) * | 2008-10-31 | 2016-04-26 | 위순임 | 자기 강화된 플라즈마 반응기 |
JP5391659B2 (ja) * | 2008-11-18 | 2014-01-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US7994724B2 (en) * | 2009-03-27 | 2011-08-09 | Ecole Polytechnique | Inductive plasma applicator |
JP5288555B2 (ja) * | 2009-05-27 | 2013-09-11 | サムコ株式会社 | 誘導結合プラズマ処理装置及びプラズマエッチング方法 |
KR101585893B1 (ko) * | 2009-05-31 | 2016-01-15 | 위순임 | 복합형 플라즈마 반응기 |
US8578879B2 (en) * | 2009-07-29 | 2013-11-12 | Applied Materials, Inc. | Apparatus for VHF impedance match tuning |
US20120160806A1 (en) * | 2009-08-21 | 2012-06-28 | Godyak Valery A | Inductive plasma source |
CN101835334B (zh) * | 2010-01-19 | 2013-01-30 | 大连理工大学 | 一种交叉场放电共振耦合的控制方法 |
US20110204023A1 (en) * | 2010-02-22 | 2011-08-25 | No-Hyun Huh | Multi inductively coupled plasma reactor and method thereof |
KR101570277B1 (ko) * | 2010-09-10 | 2015-11-18 | 가부시키가이샤 이엠디 | 플라스마 처리장치 |
US9653264B2 (en) * | 2010-12-17 | 2017-05-16 | Mattson Technology, Inc. | Inductively coupled plasma source for plasma processing |
JP2012248578A (ja) * | 2011-05-25 | 2012-12-13 | Ulvac Japan Ltd | プラズマエッチング装置 |
CN103002649B (zh) * | 2011-09-13 | 2016-09-14 | 中微半导体设备(上海)有限公司 | 一种电感耦合式的等离子体处理装置及其基片处理方法 |
CN102395243A (zh) * | 2011-10-19 | 2012-03-28 | 中微半导体设备(上海)有限公司 | 改进等离子均匀性和效率的电感耦合等离子装置 |
US9095038B2 (en) * | 2011-10-19 | 2015-07-28 | Advanced Micro-Fabrication Equipment, Inc. Asia | ICP source design for plasma uniformity and efficiency enhancement |
US9279179B2 (en) * | 2012-02-06 | 2016-03-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi coil target design |
JP5690299B2 (ja) * | 2012-03-21 | 2015-03-25 | Jswアフティ株式会社 | プラズマ形成装置 |
WO2014204598A1 (en) * | 2013-06-17 | 2014-12-24 | Applied Materials, Inc. | Enhanced plasma source for a plasma reactor |
KR101798371B1 (ko) * | 2016-04-27 | 2017-11-16 | (주)브이앤아이솔루션 | 유도결합 플라즈마 처리장치의 가스공급구조 |
EP3282469A3 (en) * | 2016-08-10 | 2018-04-04 | LAM Research Corporation | Systems and methods for rf power ratio switching for iterative transitioning between etch and deposition processes |
JP6948788B2 (ja) * | 2016-12-15 | 2021-10-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR102510329B1 (ko) * | 2018-06-25 | 2023-03-17 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 활성 가스 생성 장치 및 성막 처리 장치 |
CN110838458B (zh) * | 2018-08-17 | 2022-08-09 | 台湾积体电路制造股份有限公司 | 半导体制程系统以及方法 |
US11600517B2 (en) | 2018-08-17 | 2023-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Screwless semiconductor processing chambers |
EP3618117B1 (en) * | 2018-08-30 | 2022-05-11 | Nokia Solutions and Networks Oy | Apparatus comprising a first and second layer of conductive material and methods of manufacturing and operating such apparatus |
CN109442422B (zh) * | 2018-11-05 | 2019-12-13 | 安徽航天环境工程有限公司 | 一种高温微波等离子体发生器及废物处理系统 |
JP6844937B2 (ja) | 2019-02-13 | 2021-03-17 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
KR102189337B1 (ko) * | 2019-07-17 | 2020-12-09 | 주식회사 유진테크 | 플라즈마 처리 장치 |
KR102262034B1 (ko) * | 2019-10-02 | 2021-06-07 | 세메스 주식회사 | 기판 처리 시스템 |
GB2590613B (en) * | 2019-12-16 | 2023-06-07 | Dyson Technology Ltd | Method and apparatus for use in generating plasma |
CN111638569B (zh) * | 2020-07-17 | 2022-04-22 | 中国人民解放军空军工程大学 | 一种射频感性耦合等离子体叠加相位梯度超表面吸波结构 |
CN113458086A (zh) * | 2021-06-03 | 2021-10-01 | 广东工业大学 | 一种火箭发动机零件的清洗装置及清洗方法 |
US20230162947A1 (en) * | 2021-11-23 | 2023-05-25 | Applied Materials, Inc. | High density plasma enhanced process chamber |
CN114094341A (zh) * | 2021-11-25 | 2022-02-25 | 中国人民解放军空军工程大学 | 一种基于相位梯度超表面的薄层等离子体电磁波衰减结构 |
Family Cites Families (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4579618A (en) * | 1984-01-06 | 1986-04-01 | Tegal Corporation | Plasma reactor apparatus |
JPH0356617A (ja) * | 1989-07-21 | 1991-03-12 | Kobe Steel Ltd | 低温靭性に優れた高張力鋼の製造方法 |
US6063233A (en) * | 1991-06-27 | 2000-05-16 | Applied Materials, Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
KR100238627B1 (ko) * | 1993-01-12 | 2000-01-15 | 히가시 데쓰로 | 플라즈마 처리장치 |
JPH07161493A (ja) * | 1993-12-08 | 1995-06-23 | Fujitsu Ltd | プラズマ発生装置及び方法 |
TW296534B (ja) * | 1993-12-17 | 1997-01-21 | Tokyo Electron Co Ltd | |
US5522934A (en) * | 1994-04-26 | 1996-06-04 | Tokyo Electron Limited | Plasma processing apparatus using vertical gas inlets one on top of another |
JP3080843B2 (ja) * | 1994-08-24 | 2000-08-28 | 松下電器産業株式会社 | 薄膜形成方法及び装置 |
US5685942A (en) * | 1994-12-05 | 1997-11-11 | Tokyo Electron Limited | Plasma processing apparatus and method |
US5710486A (en) * | 1995-05-08 | 1998-01-20 | Applied Materials, Inc. | Inductively and multi-capacitively coupled plasma reactor |
US5716451A (en) * | 1995-08-17 | 1998-02-10 | Tokyo Electron Limited | Plasma processing apparatus |
JP3951003B2 (ja) * | 1995-11-17 | 2007-08-01 | 俊夫 後藤 | プラズマ処理装置および方法 |
JPH09180897A (ja) * | 1995-12-12 | 1997-07-11 | Applied Materials Inc | 高密度プラズマリアクタのためのガス供給装置 |
JP2929275B2 (ja) * | 1996-10-16 | 1999-08-03 | 株式会社アドテック | 透磁コアを有する誘導結合型−平面状プラズマの発生装置 |
JP3598717B2 (ja) * | 1997-03-19 | 2004-12-08 | 株式会社日立製作所 | プラズマ処理装置 |
EP0908923B1 (en) * | 1997-10-10 | 2003-04-02 | European Community | Apparatus to produce large inductive plasma for plasma processing |
JP3367077B2 (ja) * | 1997-10-21 | 2003-01-14 | 東京エレクトロンエイ・ティー株式会社 | プラズマ処理装置 |
US6273022B1 (en) * | 1998-03-14 | 2001-08-14 | Applied Materials, Inc. | Distributed inductively-coupled plasma source |
US6074953A (en) * | 1998-08-28 | 2000-06-13 | Micron Technology, Inc. | Dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchers |
KR100542459B1 (ko) * | 1999-03-09 | 2006-01-12 | 가부시끼가이샤 히다치 세이사꾸쇼 | 플라즈마처리장치 및 플라즈마처리방법 |
US6863835B1 (en) * | 2000-04-25 | 2005-03-08 | James D. Carducci | Magnetic barrier for plasma in chamber exhaust |
US6562189B1 (en) * | 2000-05-19 | 2003-05-13 | Applied Materials Inc. | Plasma reactor with a tri-magnet plasma confinement apparatus |
US6875366B2 (en) * | 2000-09-12 | 2005-04-05 | Hitachi, Ltd. | Plasma processing apparatus and method with controlled biasing functions |
JP2002203810A (ja) * | 2000-12-28 | 2002-07-19 | Tokyo Electron Ltd | 半導体装置の製造方法および半導体装置ならびに半導体装置の製造装置 |
US6417626B1 (en) * | 2001-03-01 | 2002-07-09 | Tokyo Electron Limited | Immersed inductively—coupled plasma source |
WO2002084700A1 (en) * | 2001-04-12 | 2002-10-24 | Lam Research Corporation | Inductively coupled plasma control with external magnetic material |
KR100408405B1 (ko) * | 2001-05-03 | 2003-12-06 | 삼성전자주식회사 | 반도체 소자의 제조 장치 |
US20030047282A1 (en) * | 2001-09-10 | 2003-03-13 | Yasumi Sago | Surface processing apparatus |
WO2003029513A1 (en) * | 2001-09-28 | 2003-04-10 | Tokyo Electron Limited | Hybrid plasma processing apparatus |
US6586886B1 (en) * | 2001-12-19 | 2003-07-01 | Applied Materials, Inc. | Gas distribution plate electrode for a plasma reactor |
JP3880864B2 (ja) * | 2002-02-05 | 2007-02-14 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
JP3804574B2 (ja) * | 2002-05-01 | 2006-08-02 | 株式会社島津製作所 | 高周波誘導結合プラズマ生成装置およびプラズマ処理装置 |
JP4175021B2 (ja) * | 2002-05-01 | 2008-11-05 | 株式会社島津製作所 | 高周波誘導結合プラズマ生成装置およびプラズマ処理装置 |
JP4127488B2 (ja) * | 2002-07-03 | 2008-07-30 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US7255774B2 (en) * | 2002-09-26 | 2007-08-14 | Tokyo Electron Limited | Process apparatus and method for improving plasma production of an inductively coupled plasma |
JP3868925B2 (ja) * | 2003-05-29 | 2007-01-17 | 株式会社日立製作所 | プラズマ処理装置 |
US7771562B2 (en) * | 2003-11-19 | 2010-08-10 | Tokyo Electron Limited | Etch system with integrated inductive coupling |
US7645341B2 (en) * | 2003-12-23 | 2010-01-12 | Lam Research Corporation | Showerhead electrode assembly for plasma processing apparatuses |
JP2005340251A (ja) * | 2004-05-24 | 2005-12-08 | Shin Etsu Chem Co Ltd | プラズマ処理装置用のシャワープレート及びプラズマ処理装置 |
JP4523352B2 (ja) * | 2004-07-20 | 2010-08-11 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP4550507B2 (ja) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
US7695633B2 (en) * | 2005-10-18 | 2010-04-13 | Applied Materials, Inc. | Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor |
US8911590B2 (en) * | 2006-02-27 | 2014-12-16 | Lam Research Corporation | Integrated capacitive and inductive power sources for a plasma etching chamber |
-
2007
- 2007-05-22 EP EP07108663A patent/EP1860680A1/en not_active Withdrawn
- 2007-05-22 CN CN201510079762.XA patent/CN104821269B/zh active Active
- 2007-05-22 US US11/751,758 patent/US20080124254A1/en not_active Abandoned
- 2007-05-22 TW TW096118207A patent/TWI435663B/zh not_active IP Right Cessation
- 2007-05-22 JP JP2007135871A patent/JP4904202B2/ja not_active Expired - Fee Related
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JP2007317661A (ja) | 2007-12-06 |
CN104821269A (zh) | 2015-08-05 |
TW200808135A (en) | 2008-02-01 |
US20080124254A1 (en) | 2008-05-29 |
TWI435663B (zh) | 2014-04-21 |
EP1860680A1 (en) | 2007-11-28 |
CN104821269B (zh) | 2017-05-10 |
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