KR20190094168A - 순차적 침윤 합성 장치 - Google Patents
순차적 침윤 합성 장치 Download PDFInfo
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- KR20190094168A KR20190094168A KR1020197016434A KR20197016434A KR20190094168A KR 20190094168 A KR20190094168 A KR 20190094168A KR 1020197016434 A KR1020197016434 A KR 1020197016434A KR 20197016434 A KR20197016434 A KR 20197016434A KR 20190094168 A KR20190094168 A KR 20190094168A
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- South Korea
- Prior art keywords
- reaction chamber
- precursor
- substrate
- removal system
- buffer tank
- Prior art date
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Abstract
본 개시는 순차적 침윤 합성 장치에 관한 것으로, 적어도 하나의 기판을 수용하도록 구성되고 배열되는 반응 챔버; 제1 흐름 제어기가 활성화되는 경우, 제1 전구체를 반응 챔버에 제공하기 위한 제1 전구체 흐름 경로; 제2 흐름 제어기가 활성화되는 경우, 제2 전구체를 반응 챔버에 제공하기 위한 제2 전구체 흐름 경로; 반응 챔버로부터 가스를 제거시키기 위한 제거 흐름 경로; 제거 흐름 제어기가 활성화되는 경우, 제거 흐름 경로에 반응 챔버 내의 가스 흐름을 생성시키기 위한 제거 흐름 제어기; 및 제1, 제2, 및 제거 흐름 제어기에 작동 가능하게 연결되고, 반응 챔버 내의 기판 상에 침윤성 재료를 순차적으로 침윤시키도록 프로그래밍되는 순차 제어기를 포함한다. 장치는 가열 시스템을 구비할 수 있다.
Description
본 개시는 일반적으로 전자 소자를 제조하는 장치 및 방법에 관한 것이다. 보다 구체적으로, 본 개시는 침윤 장치로 기판 상에 구조물을 형성하는 것에 관한 것이다.
반도체 소자의 크기가 점점 더 작아지는 추세로 나아감에 따라, 상이한 패터닝 기술이 생겨났다. 이러한 기술에는 스페이서 한정 쿼드러플 패터닝(spacer defined double patterning), 극자외선 리소그래피(EUV), 및 스페이서 한정 더블 패터닝과 결합된 EUV를 포함한다. 또한, 유도 자기-조립(DSA)은 미래의 리소그래피 응용분야를 위한 옵션으로 고려되어 왔다. DSA는 블록 코폴리머의 사용을 수반하여 자기-조립용 패턴을 한정한다. 사용된 블록 코폴리머는 폴리(메틸 메타크릴레이트)(PMMA), 폴리스티렌, 또는 폴리(스티렌-블록-메틸 메타크릴레이트)(PS-b-PMMA)를 포함할 수 있다. 다른 블록 코폴리머는 최근 떠오르는 "하이-키(high-Chi)" 고분자를 포함할 수 있으며, 이는 잠재적으로 작은 치수를 가능하게 할 수 있다.
상술한 패터닝 기술들은 기판의 고해상도 패터닝을 가능하게 하기 위해 기판 상에 배치된, EUV 고분자 또는 DSA 블록 코폴리머 레지스트와 같은, 침윤성 재료를 이용할 수 있다. 고 해상도 및 라인-에지 조도 요건을 모두 만족시키기 위해, 고분자 레지스트는 일반적으로 얇은 층일 수 있다. 그러나, 이러한 얇은 고분자 레지스트 층은 몇 가지 단점을 가질 수 있다. 특히, 고해상도 고분자 레지스트는 낮은 에칭 저항성을 가질 수 있고 높은 라인 에지 조도를 겪을 수 있다. 이렇게 낮은 에칭 저항성과 높은 라인 에지 조도는, 하부 층으로 수준 높은 패터닝의 전사를 더욱 어렵게 할 수 있다.
따라서 침윤성 재료, 예를 들어 패턴화된 물질 레지스트에 침윤하여 침윤성 재료의 특성을 변화시키는 것이 유리할 수 있다. 패턴닝된 재료의 침윤을 수행하기 위해, 최적화된 침윤 장치를 갖는 것이 유리할 수 있다.
본 발명의 적어도 일 구현예에 따라 순차적인 침윤 장치가 제공되고, 상기 장치는,
적어도 하나의 기판을 유지하기 위해 기판 홀더를 구비한 반응 챔버;
제1 기상 또는 제2 기상 전구체를 상기 반응 챔버에 제공하고 상기 반응 챔버로부터 제거하기 위해 하나 이상의 반응 챔버 밸브를 포함하는 전구체 분배 및 제거 시스템; 및
상기 하나 이상의 반응 챔버 밸브에 작동 가능하게 연결되고, 상기 제1 기상 및 상기 제2 기상 전구체와 반응 챔버 내 상기 기판 상에 제공되는 침윤성 재료를 순차적으로 침윤시키도록 프로그래밍되는 순차 제어기를 포함한다.
반응 챔버로부터 적어도 하나의 반응 챔버 밸브까지 온도를 제어하여 응축을 피하도록 구성되고 배열되는 가열 시스템을 장치에 제공할 수 있다. 반응 챔버와 반응 챔버 밸브 사이의 적어도 하나의 덕트를 가열하여 상기 반응 챔버에서 적어도 하나의 상기 챔버 밸브까지 온도를 제어하도록, 가열 시스템은 가열 요소를 포함할 수 있다. 반응 챔버 내의 제1 또는 제2 전구체의 압력에서 제1 또는 제2 전구체의 적어도 끓는점으로 온도를 제어할 수 있다.
예를 들어, 불활성 가스와 같은 혼합 가스와 제1 또는 제2 전구체의 혼합물이 사용되는 경우, 반응 챔버 내 제1 또는 제2 전구체의 압력은 상기 전구체의 부분 압력일 수 있다. 부분 압력은 제1 및/또는 제2 전구체의 침윤 동안에 도달할 수 있는 희망 최대 압력일 수 있다.
침윤 공정의 속도는 전구체의 (부분) 압력으로 증가할 수 있다. 따라서, 더 높은 압력에서의 처리는 처리량을 유리하게 최대화할 수 있으나 반응 챔버와 반응 챔버 밸브 사이의 임의의 덕트 및 반응 챔버의 비 가열부 상에 응축하는 위험성을 증가시킨다. 반응 챔버 내의 제1 기상 또는 제2 기상 전구체의 온도를 반응 챔버 밸브까지 제어함으로써, 반응 챔버 내에 응축하는 위험성을 최소화할 수 있다.
가열 시스템은 반응 챔버 온도, 및 반응 챔버에서 적어도 각각의 반응 챔버 밸브까지의 덕트 온도를 20 내지 450℃, 바람직하게는 50 내지 150℃, 보다 바람직하게는 60 내지 110℃, 및 가장 바람직하게는 65 내지 95℃로 제어하도록 구성되고 배열될 수 있다. 순차 제어기는 침윤 공정 동안, 반응 챔버 내의 제1 또는 제2 전구체의 (부분) 압력을 0.001 내지 1000 토르, 바람직하게는 0.1 내지 400 토르, 보다 바람직하게는 1 내지 100 토르, 및 가장 바람직하게는 2 내지 50 토르에 도달하고/거나 유지하도록 구성되고 배열될 수 있다.
추가 구현예에 따라 순차적 침윤 장치가 제공되며, 상기 장치는,
적어도 하나의 기판을 유지하기 위해 기판 홀더를 구비한 반응 챔버;
제1 기상 또는 제2 기상 전구체를 상기 반응 챔버에 제공하고 상기 반응 챔버로부터 제거하기 위해 하나 이상의 반응 챔버 밸브를 포함하는 전구체 분배 및 제거 시스템; 및
상기 하나 이상의 반응 챔버 밸브에 작동 가능하게 연결되고, 상기 제1 기상 및 제2 기상 전구체와 반응 챔버 내 상기 기판 상에 제공되는 침윤성 재료를 순차적으로 침윤시키도록 프로그래밍되는 순차 제어기를 포함한다. 장치는 전구체 분배 및 제거 시스템에 제공되는 버퍼 탱크를 포함할 수 있다.
버퍼 탱크는 제1 또는 제2 전구체를 저장하도록 반응 챔버의 상류에 위치할 수 있다. 버퍼 탱크는 반응 챔버 부피의 0.1 내지 15, 바람직하게는 0.3 내지 3, 보다 더 바람직하게는 0.5 내지 2 배의 부피를 가질 수 있다. 버퍼 탱크는 제1 또는 제2 전구체로 충진될 수 있어서, 반응 챔버를 상기 전구체로 충진할 수 있는 경우, 반응 챔버는 이에 의해 더 신속하게 충진되어 툴의 처리량을 증가시킨다.
또 하나의 구현예에 따라 순차적 침윤 합성 장치가 제공되며, 상기 장치는,
적어도 하나의 기판을 유지하기 위해 기판 홀더를 구비한 반응 챔버;
기상 제1 또는 제2 전구체를 상기 반응 챔버에 제공하고 상기 반응 챔버로부터 제거하기 위해 하나 이상의 반응 챔버 밸브를 포함하는 전구체 분배 및 제거 시스템; 및
상기 하나 이상의 밸브에 작동 가능하게 연결되고, 상기 제1 기상 및 제2 기상 전구체로 상기 반응 챔버 내 상기 기판 상에 제공되는 침윤성 재료를 순차적으로 침윤시키도록 프로그래밍되는 순차 제어기를 포함하되, 상기 장치는 단일 기판을 수용하도록 구성되고 배열되는 각각의 챔버가 적어도 2개인 반응 챔버를 포함하고, 상기 전구체 분배 및 제거 시스템은 동시에 상기 제1 또는 제2 전구체를 상기 적어도 2개인 반응 챔버에 제공하고 상기 적어도 2개인 반응 챔버로부터 제거되는, 부분적으로 공통인 전구체 분배형이다.
적어도 2개의 반응 챔버를 가짐으로써, 장치의 처리량을 증가시킬 수 있다. 전구체 분배 및 제거 시스템에 의해 제공되고 부분적으로 공통인 제1 또는 제2 전구체 흐름 경로와 부분적으로 공통인 제거 흐름 경로를 가짐으로써, 장치 내의 하드웨어를 단순화시키고 보다 효율적으로 사용할 수 있다.
선행 기술에 비해 달성되는 장점들 및 본 발명을 요약하기 위해, 본 발명의 특정 목적 및 장점들이 앞서 본원에 기술되었다. 물론, 모든 목적 및 장점들이 본 발명의 임의의 특별한 구현예에 따라 반드시 달성되는 것이 아니라는 것을 이해하여야 한다. 따라서, 예들 들어 당업자는, 본 발명이, 본원에 교시 또는 제안될 수 있는 다른 목적들 또는 장점들을 반드시 달성하지 않고서, 본원에 교시되거나 제시된 바와 같은 하나의 장점 또는 여러 장점들을 달성 또는 최적화 하는 방식으로 구현되거나 수행될 수 있다는 것을 인식할 것이다.
이들 구현예 모두 본원에 개시된 본 발명의 범주 내에 있도록 의도된다. 이들 및 다른 구현예들은 첨부된 도면들을 참조하는 특정 구현예들의 다음의 상세한 설명으로부터 당업자에게 쉽게 분명하게 될 것이고, 본 발명은 개시된 임의의 특정 구현예(들)에 한정되지 않는다.
도면의 구성 요소들은 간략하게 및 명료하게 도시되어 있으며, 도시된 본 개시의 구현예의 이해를 돕기 위해 반드시 축적대로 그려지지 않았음을 이해할 것이다. 예를 들어, 본 개시에서 도시된 구현예의 이해를 돕기 위해 도면 중 일부 구성 요소의 치수는 다른 구성 요소에 비해 과장될 수 있다.
도 1은 하나의 구현예에 따른 순차적 침윤 합성 장치를 도시한다.
도 2a 및 도 2b는 순차적 침윤 합성 장치에서 사용하기 위해 본 발명의 적어도 하나의 구현예에 따른 침윤 방법을 도시한다.
도 3은 하나의 구현예에 따른 순차적 침윤 장치의 반응 챔버를 도시한다.
도 4는 또 다른 하나의 구현예에 따른 순차적 침윤 장치의 반응 챔버를 도시한다.
도 5는 배치식 반응기를 포함하는 구현예 하나에 따른 순차적 침윤 장치의 반응 챔버를 도시한다.
도 6, 도 7, 도 8, 도 9, 도 10a, 도 10b 및 도 10c는 순차적 침윤 합성 장치의 상이한 구성을 도시한다.
도 1은 하나의 구현예에 따른 순차적 침윤 합성 장치를 도시한다.
도 2a 및 도 2b는 순차적 침윤 합성 장치에서 사용하기 위해 본 발명의 적어도 하나의 구현예에 따른 침윤 방법을 도시한다.
도 3은 하나의 구현예에 따른 순차적 침윤 장치의 반응 챔버를 도시한다.
도 4는 또 다른 하나의 구현예에 따른 순차적 침윤 장치의 반응 챔버를 도시한다.
도 5는 배치식 반응기를 포함하는 구현예 하나에 따른 순차적 침윤 장치의 반응 챔버를 도시한다.
도 6, 도 7, 도 8, 도 9, 도 10a, 도 10b 및 도 10c는 순차적 침윤 합성 장치의 상이한 구성을 도시한다.
특정 구현예 및 실시예가 아래에 개시되었지만, 당업자는 본 발명이 구체적으로 개시된 구현예 및/또는 본 발명의 용도 및 이들의 명백한 변형 및 균등물을 넘어 연장된다는 것을 이해할 것이다. 따라서, 개시된 발명의 범주는 후술되는 구체적인 개시된 구현예에 의해 제한되지 않도록 의도된다.
도 1은 하나의 구현예에 따른 순차적 침윤 합성 장치를 도시한다. 상기 장치는 스틸, 알루미늄 또는 석영과 같은 적합한 재료로 제조된 반응 챔버(2)를 포함한다. 상부에 침윤성 재료를 구비한 기판(12)은 기판 개구(미도시)를 통해 기판 핸들러에 의해 반응 챔버(2) 내의 기판 홀더(10) 상에 위치할 수 있다. 반응 챔버(2)는 플랜지에 의해 하나의 말단부에서 폐쇄된 챔버를 형성하며, 이를 통해 가스가 상기 개구의 개폐를 제어하는 적어도 하나의 (분배) 반응 챔버 밸브(19)를 구비한 하나 이상의 개구를 통해 도입된다.
분배 반응 챔버 밸브(19)는 전구체 분배 및 제거 시스템의 유체 분배 부분을 반응 챔버(2)에 접근하는 것을 제공한다. 전구체 분배 및 제거 시스템은, 분배 반응 챔버 밸브(19)를 통해 반응 챔버에 제1 전구체(28) 또는 제2 전구체(29)를 제공할 수 있다. 챔버(2) 내로 전달하기 위한 적절한 증기압을 제공하기 위해, 제1 전구체(28)는 제1 전구체 히터(32)에 의해 용기(30) 내에 함유된 액체 또는 고체를 기화시킴으로써 챔버(2) 내에 가스로서 도입될 수 있다. 제1 전구체 히터(32)는 용기(30) 내의 제1 전구체에 열을 제공할 수 있다. 동일하게, 반응 챔버(2) 내로 전달하기 위한 적절한 증기압을 제공하기 위해, 제2 전구체(29)는 제2 전구체 히터(33)에 의해 용기(31) 내에 함유된 액체 또는 고체를 기화시킴으로써 챔버(2) 내에 가스로서 도입될 수 있다.
분배 버퍼 탱크(18)가 반응 챔버 밸브(19)의 상류에 있는 가스 분배 및 제거 시스템에 제공되어 가스를 저장할 수 있다. 버퍼 탱크는 반응 챔버(2) 부피의 0.1 내지 15, 바람직하게는 0.3 내지 3, 보다 더 바람직하게는 0.5 내지 2 배의 부피를 가질 수 있다. 버퍼 탱크는 제1 또는 제2 전구체로 충진될 수 있어서, 반응 챔버를 상기 전구체로 충진해야 하는 경우, 반응 챔버는 이에 의해 더 신속하게 충진되어 장치의 처리량을 증가시킨다. 분배 버퍼 탱크(18)를 가열할 수 있다.
도시된 바와 같이, 제1 및 제2 전구체를 위한 흐름 경로 및 버퍼 탱크는 부분적으로 공통일 수 있지만, 또한 분리될 수도 있다. 또한 별도의 버퍼 탱크를 갖는 분리된 흐름 경로는, 두 버퍼 탱크를 독립적으로 로딩하여 장치의 처리량을 증가시키고 효율적인 전구체 사용을 제공하는 것이 가능하다. 분리된 흐름 경로의 경우, 각각의 흐름 경로는 별도의 분배 반응 챔버 밸브(19)를 구비할 수 있다.
전구체 분배 및 제거 시스템은, 퍼지 밸브(24)와 분배 반응 챔버 밸브(19)를 통해 반응 챔버(2)에 퍼지 가스(34)를 제공하는 퍼지 시스템을 포함할 수 있다. 퍼지 가스를 위한 흐름 경로를 도시한 바와 같이, 제1 및 제2 전구체는 부분적으로 공통적일 수 있지만, 부분적으로 또는 완전히 분리될 수도 있다. 분리된 흐름 경로의 경우, 각각의 흐름 경로는 별도의 분배 반응 챔버 밸브(19)를 구비할 수 있다.
퍼지 가스는 질소와 같은 불활성 가스일 수 있으며 반응 챔버(2)를 퍼지하기 위해 사용될 수 있다. 퍼지 가스는 버퍼 탱크(18)를 또한 퍼지하기 위해 사용될 수 있다.
선택적으로, 분배 반응 챔버 밸브(19)가 폐쇄되는 동안에 버퍼 탱크(18)와 분배 반응 챔버 밸브(19) 사이의 별도의 배기(미도시)가 펌프(39)에 연결되어 버퍼 탱크(18)를 더욱 효과적으로 퍼지할 수 있다.
대안적이거나 추가적으로, 퍼지 시스템은 퍼지 가스를 반응 챔버(2) 내에 직접 제공하는 퍼지 반응 챔버 밸브(미도시)를 통해 퍼지 가스를 반응 챔버(2)에 직접 제공하도록 구성되고 배열될 수 있다. 반응 챔버에 퍼지 가스를 직접 제공함으로써, 반응 챔버가 퍼지되는 동안에 전구체 분배 및 제거 시스템을 사용하여 전구체를 로딩하는 것이 가능해진다. 이 방식으로 처리량을 증가시키는 것이 가능해진다. 퍼지 시스템은 더 효과적으로 주입하기 위해 퍼지 가스 버퍼 챔버를 구비할 수 있다.
반응 챔버는, 예를 들어 게이트 밸브와 같은 하나 이상의 반응 챔버 밸브(36)를 구비한 하나 이상의 개구를 통해, 전구체 분배 및 제거 시스템의 가스 제거부에 연결되는 플랜지에 의해 다른 말단부에서 폐쇄된다. 가스 제거 펌프(39) 및 선택적인 제거 버퍼 탱크(38)는 전구체 분배 및 제거 시스템의 가스 제거부의 일부일 수 있다.
게이트 밸브(36)의 하류에 있는 가스 제거 시스템에 제거 버퍼 탱크(38)를 제공할 수 있다. 반응 챔버 밸브(36)가 개방되는 경우에 제거 버퍼 탱크 내의 가스를 흡입하기 위해, 제거 버퍼 탱크(38)는 반응 챔버 부피의 1 내지 30, 바람직하게는 5 내지 15 배의 부피를 가질 수 있다. 300 mm 직경을 갖는 기판에 대한 반응 챔버(2)의 부피는, 단일 기판 반응 챔버의 경우 0.5 내지 1 리터 부피, 기판 위에 샤워헤드를 갖는 단일 기판 반응 챔버의 경우 3 내지 5 리터, 그리고 25 내지 250매 기판을 위한 배치식 반응기 챔버의 경우 50 내지 200 리터일 수 있다.
반응 챔버(2)는 기판 홀더(10)에 기판을 제공하도록 개구(미도시)를 구비할 수 있다. 기판 핸들러가 기판 홀더(12)에 접근할 수 있도록, 개구를 폐쇄하고 개방하는 도어를 제공할 수 있다. 기판 홀더는 또한 반응 챔버(2) 벽의 일부를 형성할 수 있고 기판 홀더(10)에 대한 접근을 제공하도록 이동 가능할 수 있다.
제1 전구체(28)는 기판(12) 상의 침윤성 재료에 형성되는 침윤 재료의 원소를 갖는 화합물일 수 있다. 제1 전구체(28)는 제1 전구체 밸브(20), 버퍼 탱크(18), 및 분배 반응 챔버 밸브(19)를 통해 반응 챔버(2) 내로 제공될 수 있다. 도 1은 각각 제1 전구체(28) 및 제2 전구체(29)를 각각 포함하는 2개의 용기(30 및 31)를 갖는 시스템을 도시한다. 그러나, 형성되는 침윤 재료의 유형은 전구체 및 용기의 수를 결정할 것이다. 예를 들어, 삼원계 침윤 재료를 원하는 경우에 장치는 3개의 용기와 3개의 전구체 밸브를 포함할 수 있다.
또한, 용기(30 및 31)는 필요하다면 다른 적절한 전구체 저장 수단으로 교체될 수 있다. 예를 들어, 전구체 중 하나가 고체일 수 있는 경우, 고체 전구체의 승화를 가속화하기 위해 특별히 조정된 용기가 제공될 수 있다. 용기(30, 31) 중 하나는 가열을 요구하지 않도록 기상 전구체를 또한 구비할 수도 있다.
순차 제어기(40), 예를 들어 마이크로제어기는 하나 이상의 반응 챔버 밸브(19, 36), 전구체 밸브(20, 22) 및 퍼지 밸브(24)에 동작 가능하게 연결될 수 있다. 장치가 제1 전구체(28) 및 제2 전구체(29)로 반응 챔버(2) 내의 기판(12) 상에 제공된 침윤성 재료의 침윤을 실행할 수 있도록 프로그래밍되는 프로그램을 저장하기 위하여, 순차 제어기(40)는 메모리(M)를 포함할 수 있다. 압력 및/또는 온도 센서(26)는 챔버 압력 및 온도를 모니터링할 수 있고, 침윤 공정 조건을 최적화하기 위해 작동 중에 순차 제어기(40)와 작동 가능하게 연결될 수 있다. 순차 제어기(40)의 메모리(M) 내에 저장된 프로그램은, 적절한 시간에 밸브(19, 20, 22, 24 및 36)의 개폐를 시퀀싱하여 제1 및 제2 전구체를 반응 챔버(2)에 제공하고 제거할 수 있도록 프로그래밍될 수 있다. 전구체 밸브(20, 22)를 가열할 수 있다.
장치는 제1 가열 요소(14), 예를 들어 온도 센서(26)에 작동 가능하게 연결되는 가열 제어기(16) 및 가열 저항기 와이어를 포함하는 가열 시스템을 제공할 수 있다. 하나 이상의 온도 센서(26)는 압력 센서와 함께 제공될 수도 있다. 가열 제어기(16)는 순차 제어기(40)에 작동 가능하게 연결될 수 있다. 반응 챔버(2)의 온도를 측정하고 가열 제어기(16)에 이 온도에 대해 피드백을 제공하여, 반응 챔버(2)의 온도를 조정하도록 가열 요소(14)의 온도를 조절하기 위해 온도 센서(26)를 사용할 수 있다.
가열 시스템(16)은 반응 챔버(2)에서 적어도 하나의 반응 챔버 밸브(19 또는 36)까지 온도를 제어할 수 있다. 따라서, 제1 가열 요소(14)는 반응 챔버(2)를 따라 상기 적어도 하나의 반응 챔버 밸브(19 또는 36)까지 연장되어 반응 챔버(2)를 가열할 수 있다. 제1 가열 요소(14)는 반응 챔버(2), 및 반응 챔버(2)와 상기 적어도 하나의 반응 챔버 밸브(19 또는 36) 사이의 적어도 하나의 덕트를 가열할 수 있다. 제1 가열 요소는 또한 반응 챔버 밸브(19, 36) 중 하나를 가열하여 상기 밸브 상의 응축을 피할 수 있다.
(분배) 반응 챔버 밸브(19)와 반응 챔버(2) 사이의 전구체 흐름 덕트는, 제1 가열 요소(14)의 일부를 구비할 수 있다. 전구체 흐름 덕트를 따르는 제1 가열 요소(14)의 이 부분은, 흐름 덕트 및 가열 제어기(16)에서 연장되는 온도 센서(26)로 개별적으로 제어되어서 전구체 흐름 덕트의 온도를 조절할 수 있다.
반응 챔버(2)와 (제거) 반응 챔버 밸브(36) 사이의 전구체 제거 흐름 덕트는 제1 가열 요소(14)의 일부를 구비할 수 있다. 전구체 제거 흐름 덕트를 따르는 제1 가열 요소(14)의 이 부분은, 전구체 제거 흐름 덕트 및 가열 제어기(16)에서 연장되는 온도 센서(26)로 개별적으로 제어될 수 있다.
이 방식으로 전구체 흐름 덕트 및 전구체 제거 흐름 덕트는 반응 챔버(2)에서 응축을 일으킬 수 있는 냉점을 피할 수 있다. 전구체의 응축은, 전구체가 반응 챔버로부터 효과적으로 제때 제거하는 것을 불가능하게 해서 응축물이 후속 전구체와 반응하여 입자를 형성하고, 이는 반응 챔버와 기판(12)을 오염시킬 수 있다. 특히, 전구체를 전달하는 흐름 덕트의 입자는 많은 문제를 초래할 수 있다.
온도는 최적화된 공정 온도로 설정될 수 있다. 침윤 공정의 속도는 압력으로 증가할 수 있다. 따라서 더 높은 압력에서 처리하면, 유리하게 처리량을 최대화하지만 응축 위험을 증가시킨다. 반응 챔버(2) 내의 제1 또는 제2 전구체의 최대 압력에서 제1 또는 제2 전구체의 끓는점은 응축을 피하기 위해 희망 최적 공정 온도보다 낮아야 한다. 반응 챔버(2)에서 적어도 하나의 반응 챔버 밸브(19, 36)까지 온도를 제어함으로써, 응축하는 위험성을 최소화시킬 수 있다. 용기(30, 31)에서 반응 챔버 밸브(36)까지의 전체 흐름 경로에서의 온도를 제어하는 것이 또한 유리할 수 있다.
예를 들어, 제1 또는 제2 전구체가 트리메틸알루미늄(TMA)인 경우에 증기압은,
20°C ~ 9 토르
40°C ~ 25 토르
60°C ~ 64 토르
80°C ~ 149 토르
100°C ~ 313 토르
128°C ~ 760 토르
이들 값으로부터 알 수 있는 바와 같이, 반응 챔버의 온도를 증가시킴으로써 처리 압력을 실질적으로 증가시킬 수 있다. 그러나, 장치에서 전구체와 접촉하고 약간 낮은 온도를 갖는 작은 부분이 존재하는 경우, 원하지 않는 전구체가 즉시 응축하는 위험성이 존재한다.
전구체, 예를 들어 TMA와 침윤성 재료의 상호 작용은 주로 흡착 및 확산을 통한 것일 수 있다. 흡착 및 확산 속도 및 흡착 반응 평형이 온도 변화에 의해 영향을 받을 수 있기 때문에 온도는 침윤에 상당한 영향을 미칠 수 있다.
침윤 공정은 90℃에서 최적화될 수 있는 반면에, TMA의 경우에 침윤은 120℃ 및 150℃에서 덜 양호하다. 이는 흡착 기반 공정에 대해 예상될 수 있다. 더 높은 온도에서, 흡착 반응의 평형은 별도의 TMA 및 고분자 종을 향해 이동할 수 있다. 따라서, 20 내지 400, 바람직하게는 50 내지 150, 보다 바람직하게는 60 내지 110, 및 가장 바람직하게는 65 내지 95℃의 공정 온도가 바람직하다.
따라서, 가열 시스템은 반응 챔버 온도, 및 반응 챔버에서 적어도 각각의 반응 챔버 밸브까지의 덕트 온도를 20 내지 450, 바람직하게는 50 내지 150, 보다 바람직하게는 60 내지 110, 및 가장 바람직하게는 65 내지 95℃로 제어하도록 구성되고 배열될 수 있다. 순차 제어기의 메모리(M)는 응축을 피하기 위해 침윤 공정 동안, 반응 챔버 내의 제1 또는 제2 전구체의 압력을 0.001 내지 1000 토르, 바람직하게는 0.1 내지 400 토르, 보다 바람직하게는 1 내지 100 토르, 및 가장 바람직하게는 2 내지 50 토르에 도달하고/거나 유지하도록 구성되고 배열될 수 있다. 이 방식으로, 장치의 응축을 피하는 데 충분한 안전 마진을 생성하면서 전구체 TMA의 사용에 대하여 최적의 공정 온도 및 압력을 갖는다.
장치는 액체 흐름 제어기 및 기화기를 포함하는 직접식 액체 인젝터(DLI)를 포함할 수 있다. 액체 흐름 제어기는 기화기로의 액체 흐름을 제어하여 제1 또는 제2 전구체를 기화시킬 수 있다. 흐름 제어기와 기화기 사이의 액체 흐름을 가열할 필요가 없을 수 있다. 기화기는 제1 또는 제2 전구체를 기화시키도록 가열될 수 있다. 반응 챔버(2) 내 제1 또는 제2 전구체의 압력에서 반응 챔버(2)로부터 기화기까지의 온도를 제1 또는 제2 전구체의 적어도 끓는점으로 제어하여 응축을 피하도록, 가열 시스템을 구성하고 배열할 수 있다. 기화기는 반응 챔버 내에 구성되고 배열되어 기화된 전구체를 반응 챔버 내에 바로 제공할 수 있다. 기화기는 또한 장치의 전구체 분배 및 제거 시스템에 구성되고 배열될 수 있다.
장치의 전구체 분배 및 제거 시스템은, 전구체 분배 및 제거 시스템에 제공된 적어도 하나의 버퍼 탱크(18, 38)를 포함할 수 있다. 버퍼 탱크는 제1 기상 또는 제2 기상 전구체(28, 29)를 저장하기 위해 반응 챔버(2)의 상류에 위치한 분배 버퍼 탱크(18)일 수 있고, 반응 챔버(2) 부피의 0.1 내지 10, 보다 더 바람직하게는 0.3 내지 3, 보다 더 바람직하게는 0.5 내지 2 배의 부피를 갖는다. 300 mm 직경을 갖는 기판에 대한 반응 챔버(2)의 부피는, 단일 기판 반응 챔버의 경우 0.5 내지 1 리터 부피, 기판 위에 샤워헤드를 갖는 단일 기판 반응 챔버의 경우 3 내지 5 리터, 그리고 25 내지 250매 기판을 위한 배치식 반응기 챔버의 경우 50 내지 200 리터일 수 있다.
분배 버퍼 탱크(18)는 직접식 액체 인젝터(DLI)형 기화기를 구비하여 버퍼 탱크 내에 기상 전구체를 직접 주입할 수 있다. 분배 버퍼 탱크(18)는 버퍼 탱크에서 상이한 부피를 수용하기 위한 가요성 벨로우즈를 포함할 수 있다. 분배 버퍼 탱크(18)는 반응 챔버(2)에 짧은 전달 라인을 가지며 반응 챔버(2)의 상부에 또는 그 근처에 제공될 수 있고, 동시에 반응 챔버에 의해 가열될 수 있다.
상기 장치는 전구체 버퍼 탱크(18) 및/또는 전구체 분배 및 제거 시스템의 유체 분배 부분 내의 덕트의 온도를 제어하기 위한 제2 가열 요소(17)를 포함할 수 있다. 이들 부분의 온도는 반응 챔버(2)의 온도 이상으로 0 내지 50, 더 바람직하게는 0.1 내지 20, 가장 바람직하게는 0.2 내지 10 °C로 제어될 수 있다. 제2 가열 요소(17)는 가열 제어기(16)에 의해 제어될 수 있다. 제2 온도/압력 센서(미도시)가 전구체 버퍼 탱크(18) 및/또는 유체 분배 부분 내의 덕트에 제공될 수 있고, 가열 제어기(16)에 작동 가능하게 연결되어 제어를 향상시킬 수 있다. 버퍼 탱크(18)가 반응기 챔버(2)보다 더 높은 온도를 가짐으로써, 더 작은 크기의 버퍼 탱크가 분배 반응 챔버 밸브(19)를 개방한 후에 반응기 챔버(2)를 짧은 시간 간격으로 충진하는 것이 필수적이도록 전구체를 위해 버퍼 탱크(18) 내에 더 높은 증기압을 유지하는 것이 가능해진다.
제1 및 제2 가열 요소(14 및 17)는 장치의 관련 부위 주위에 감기는 저항기 와이어일 수 있다. 양호한 온도 절연 및 약 90°C의 비교적 낮은 작동 온도로, 이러한 구현예가 작동할 수 있다. 제1 및 제2 가열 요소(14, 17)는 다중 온도 센서를 갖는 다중 영역 가열 요소일 수 있어서, 툴의 모든 부분에서 온도를 더욱 정확하게 제어한다.
전구체 분배 및 제거 시스템은, 전구체를 제공하기 위한 버블러를 포함할 수 있다. 버블러는, 0.01 내지 2, 바람직하게는 0.3 내지 1 초 동안의 혼합 가스 펄스와 교대하면서, 0.1 내지 200, 바람직하게는 1 내지 3 초 동안의 제1 전구체의 펄스를 갖는 불연속적인 전구체 흐름을 제공한다.
전구체 분배 및 제거 시스템은 직접식 액체 인젝터(DLI)형 기화기를 구비하여 기상 전구체를 반응 챔버(2) 내, 분배 버퍼 탱크(18) 내, 또는 분배 반응 챔버 밸브(19)의 상류에 있는 전구체 분배 및 제거 시스템의 다른 덕트에 직접 주입할 수 있다.
전구체 분배 및 제거 시스템은, 제거 반응 챔버 밸브(36) 뒤에 그러나 제거 펌프(39) 앞의 반응 챔버 하류에 전구체 분배 및 제거 시스템에 제공되는 제거 버퍼 탱크(38)를 가질 수 있다. 제거 챔버 밸브 밸브(36)가 개방되는 경우에 버퍼 탱크 내의 가스를 흡입하기 위해, 제거 버퍼 탱크는 반응 챔버 부피의 1 내지 20, 그리고 바람직하게는 5 내지 15 배의 부피를 가질 수 있다.
도 1을 참조하면, 통상적인 작동 중에 용기(30)로부터 기상인 제1 전구체(28)에 노출됨으로써, 제1 전구체(28)는 기판 상의 침윤성 재료에 침윤된다. 제1 전구체(28)는 기판 상의 침윤성 재료와 반응하고 기판 상의 침윤성 재료에 침윤된 화학흡착 유도체 또는 물리흡착 유도체가 될 수 있다. 이어서 용기(31)로부터 기상인 제2 전구체(29)에 노출됨으로써, 제2 전구체(29)는 기판 상의 침윤성 재료에 침윤된다. 제2 전구체(29)는 기판 상의 침윤성 재료에 침윤된 제1 전구체(28)의 화학흡착 또는 물리흡착 유도체와 반응하여 최종 침윤 재료가 될 수 있다.
제1 또는 제2 전구체를 저장하기 위한 용기(30, 31)는, 트리메틸 알루미늄(TMA), 트리에틸 알루미늄(TEA) 및 디메틸알루미늄하이드라이드(DMAH)로 이루어진 군으로부터 선택된 알루미늄의 알킬 화합물을 저장하기 위해 구성되고 배열된다.
용기(30, 31)는, 티타늄(IV)클로라이드(TiCl), 탄탈륨(V)클로라이드(TaCl5), 및/또는 니오븀 클로라이드(NbCl5)와 같은 제1 또는 제2 전구체를 저장하도록 구성되고 배열될 수 있다.
지르코늄 또는 하프늄을 침윤시키기 위해, 용기(30, 31)는 Zr 또는 Hf 전구체를 저장하도록 구성되고 배열될 수 있다. Zr 또는 Hf 전구체는 금속 유기, 유기 금속 또는 할라이드 전구체를 포함할 수 있다. 일부 구현예에서 전구체는 할라이드이다. 일부 다른 구현예에서 전구체는 TEMAZ 또는 TEMAH와 같이 Hf 또는 Zr의 알킬아민 화합물이다.
용기(30, 31)는 물, 오존, 수소과산화물, 암모니아 및 히드라진을 포함하는 군에서 선택되는 산화제와 같은 제1 또는 제2 전구체를 저장하도록 구성되고 배열될 수 있다.
장치는, 트리메틸 알루미늄(TMA), 트리에틸 알루미늄(TEA), 디메틸알루미늄하이드라이드(DMAH), 디메틸에틸아민알란(DMEAA), 트리메틸아민알란(TEAA), N-메틸피로리딘알란(MPA), 트리이소부틸알루미늄(TIBA), 트리터트부틸알루미늄(TTBA), 트리메틸보론 및 트리에틸보론으로 이루어진 군으로부터 바람직하게 선택되는 알루미늄 또는 붕소 탄화수소 화합물과 같은 제1 또는 제2 전구체를 함유하는 제1 용기(31), 및 티타늄(IV) 클로라이드(TiCl), 탄탈륨(V) 클로라이드(TaCl5) 및 니오븀 클로라이드(NbCl5)로 이루어진 군으로부터 바람직한 금속 할라이드와 같은 제1 또는 제2 전구체 중 다른 하나를 포함하는 제2 용기(31)를 포함할 수 있다. 후자는 금속 탄화물 재료를 침윤시키기 위해 바람직할 수 있다.
도 2a 및 도 2b는 도 1의 장치에서 사용하기 위해 본 발명의 적어도 하나의 구현예에 따른 침윤 방법을 도시한다. 상기 방법은, 기판 핸들러로 반응 챔버에 기판을 제공하는 제1 단계(50)를 포함하며, 상기 기판은 상기 기판 상에 적어도 하나의 침윤성 재료를 갖는다.
침윤성 재료는 다공성일 수 있다. 다공성은 침윤성 재료의 총 부피의 분율로서 침윤성 재료의 빈 공간을 측정함으로써 측정될 수 있고, 0 내지 1의 값을 가질 수 있다. 침윤성 재료는, 총 부피에 대해 빈 공간의 분율이 0.1보다 크거나, 0.2보다 크거나, 심지어 0.3보다 큰 경우 다공성으로서 적격화될 수 있다.
침윤성 재료는 하드마스크 재료일 수 있으며, 예를 들어, 스핀 온 글라스 또는 스핀 온 카본층, 실리콘 질화물층, 반사 방지 코팅 또는 비정질 탄소막을 포함할 수 있다. 스핀 온 글라스 또는 스핀 온 카본층은, 하드마스크 재료를 제공하도록 기판 상에 유리 또는 탄소층을 스피닝함으로써 제공될 수 있다. 또한, 하드마스크 재료는 SiCOH, 또는 SiOC를 포함할 수 있다.
하나의 구현예에서, 침윤성 재료는 패터닝된 층, 예를 들어 패터닝된 (포토)레지스트층일 수 있다. 레지스트층은 어닐링될 수 있다. 어닐링 단계는 레지스트로부터 수분 또는 다른 오염물을 디가싱하거나, 레지스트를 경화시키거나, 기판 표면으로부터 레지스트의 일부를 선택적으로 연소시키거나 또는 요구되는 다공성을 생성하는 목적을 가질 수 있다.
하나의 구현예에서, 패터닝된 층을 형성하기 위해, 패터닝된 층은 블록 코폴리머 막을 가지고 블록 코폴리머 막의 유도된 자기-조립을 촉진함으로써 제공될 수 있다. 이러한 패터닝된 층을 침윤하는 것은 이러한 패터닝된 층의 품질을 개선할 수 있다. 블록 코폴리머 막은, 예를 들어 낮은 에칭 저항성을 가질 수 있고, 코폴리머 내의 패턴을 침윤시킴으로써, 패턴의 에칭 저항성을 개선시킬 수 있다.
하나의 구현예에서, 패터닝된 층은 리소그래피 장치에 노출되는 포토레지스트를 가짐으로써 제공될 수 있다. 이러한 패터닝된 층을 침윤하는 것은 이러한 패터닝된 층의 품질을 개선할 수 있다. 패터닝된 포토레지스트층은, 예를 들어 낮은 에칭 저항을 가질 수 있고, 패터닝된 포토레지스트에 침윤함으로써 패턴의 에칭 저항성이 개선될 수 있다.
도 2에서 단계(50) 동안에 도 1의 반응 챔버(2)에 기판이 위치한 후, 반응 챔버 및 기판은 반응 챔버(2)를 배기하는 제거 펌프(39)에 의해 세정될 수 있다. 선택적으로 퍼지 가스(34)는 퍼지 밸브(24) 및 분배 반응 챔버 밸브(19)를 통해 반응 챔버(2)를 플러싱하기 위한 퍼지 시스템으로 제공될 수 있다. 반응 챔버(2)는 가열되어 가스 방출을 향상시킬 수 있다.
메모리(M)의 프로그램은, 전구체 분배 및 제거 시스템을 활성화시켜 반응 챔버(2)로부터 가스를 제거하고 퍼지 시스템으로 퍼지 가스를 제공하여 침윤을 시작하기 전에 바람직하게는 1 내지 4000 초, 바람직하게는 100 내지 2000 초 동안에 반응 챔버를 퍼지하도록 프로그래밍될 수 있다. 메모리(M) 내의 프로그램은, 히터 시스템(16)을 활성화시켜 20 내지 450°C, 바람직하게는 50 내지 150°C, 가장 바람직하게는 70 내지 100°C의 온도로 반응 챔버(2)를 가열하여 오염물의 아웃가싱을 향상시키도록 프로그래밍될 수 있다.
이어서, 상기 방법은 침윤성 재료를 하나 이상의 침윤 사이클 동안에 침윤 재료로 침윤시킬 수 있는 침윤 방법(51)을 포함한다. 각각의 침윤 사이클은 다음의 단계를 포함할 수 있다.
단계(52)는 제1 기간(T1) 동안 반응 챔버 내 기판 상의 침윤성 재료에 제1 전구체를 제공하는 단계를 포함한다. 순차 제어기(40)의 프로세서 상에서 실행되는 경우, 침윤 장치가 퍼지 밸브(24) 및 분배 반응 챔버 밸브(19)를 폐쇄하고, 제1 전구체 밸브(20)를 개방하며 제1 전구체 온도 제어기(32)가 용기(32)를 가열하도록 활성화시켜 제1 용기(30)로부터 제1 전구체(28)를 기화시킴으로써 분배 챔버 밸브(19)의 상류에 분배 및 제거 시스템의 덕트에 제1 전구체를 축적하도록 하는 프로그램을 순차 제어기(40)의 메모리(M)에 제공할 수 있다. 제1 전구체는 버퍼 탱크(18)에 저장될 수 있다. 제1 전구체의 덕트 및 버퍼 탱크(18)에 높은 증기 농도를 유지하기 위해 충분히 덕트를 가열하기 위해, 가열 제어기(16)는 가열 요소(17)를 제어할 수 있다.
그 다음, 순차 제어기(40)의 메모리(M) 내의 프로그램은, 짧은 시간 동안 반응 챔버(2)로 제1 전구체(28)를 전달하기 위해 밸브(20) 개방을 실행하도록 프로그래밍될 수 있다. 제거 반응 챔버 밸브(36)가 개방되고 플러싱 기간(FP) 동안 제거 펌프가 활성화되어 반응 챔버(2)를 제1 전구체로 플러싱하는 것으로, 이것을 수행할 수 있다. 플러싱 기간(FP)은 또한 생략될 수 있다. 반응 챔버(2)가 단일 기판을 수용하도록 구성되고 배열되는 경우, 1 내지 60 초과, 바람직하게는 2 내지 30 초 사이의 플러싱 기간(FP)을 위해 제1 전구체 흐름 제어기를 활성화하도록 메모리 내의 프로그램을 프로그래밍할 수 있다. 반응 챔버가 2 내지 25매의 기판을 수용하도록 구성되고 배열되는 경우, 1 내지 100 초, 바람직하게는 2 내지 50 초 사이의 플러싱 기간(FP)을 갖도록 메모리 내 프로그램을 프로그래밍할 수 있다. 반응 챔버가 26 내지 200매의 기판을 수용하도록 구성되고 배열되는 경우, 1 내지 100 초, 바람직하게는 5 내지 50 초 사이의 플러싱 기간(FP)을 갖도록 메모리 내 프로그램을 프로그래밍한다.
순차 제어기(40)의 메모리(M)에 설치된 프로그램에 의해 제거 반응 챔버 밸브(36)를 폐쇄함으로써 로딩 기간(LP) 동안에 제거 펌프(39)로 어떠한 전구체를 제거하지 않으면서, 전구체 분배 및 제거 시스템으로 제1 전구체를 반응기 챔버(2)에 또한 제공할 수 있다. 이는 반응 챔버(2) 내에 제1 전구체의 압력 축적을 초래한다. 반응 챔버(2) 내의 제1 또는 제2 전구체의 압력이 최대 희망 침윤 압력에 도달하는 경우, 순차 제어기(40)는 이러한 축적을 종료할 수 있다. 대안적으로, 압력 로딩 기간(LP)을 또한 종료할 수 있는, 소정의 희망 공정 압력 위로 반응 챔버 내의 압력이 증가하는 경우, 개방되는 압력 방출 밸브가 있을 수 있다.
후속하여, 제1 전구체는 반응 챔버(2)에 정지된 상태로 유지될 수 있는 동안에, 전구체 분배 및 제거 시스템은 침지 기간(SP) 동안에 전구체를 전혀 제공하지 않거나 제거하지 않는다. 메모리(M) 내에 저장된 프로그램에 따라 반응기 챔버 밸브(19 및 36)를 폐쇄하는 순차 제어기(40)에 의해 이를 행할 수 있다. 반응 챔버(12)가 단일 기판을 수용하도록 구성되고 배열되는 경우, 1 내지 3000, 바람직하게는 3 내지 1000, 더 바람직하게는 5 내지 500 초 사이의 로딩 기간(LP); 및 10 내지 9000, 바람직하게는 50 내지 5000 초, 더 바람직하게는 100 내지 1000 초 사이의 침지 기간(SP) 동안에 제1 전구체 흐름 제어기를 활성화하도록 메모리(M) 내의 프로그램을 프로그래밍할 수 있다. 반응 챔버(12)가 2 내지 25매의 기판을 수용하도록 구성되고 배열되는 경우, 1 내지 3000, 바람직하게는 3 내지 1000, 더 바람직하게는 5 내지 500 초 사이의 로딩 기간(LP); 및 10 내지 12000, 바람직하게는 15 내지 6000 초, 더 바람직하게는 20 내지 1000 초 사이의 침지 기간(SP)으로 메모리(M) 내의 프로그램을 프로그래밍할 수 있다. 반응 챔버(12)가 26 내지 200매의 기판을 수용하도록 구성되고 배열되는 경우, 1 내지 3000, 바람직하게는 3 내지 1000, 더 바람직하게는 5 내지 500 초 사이의 로딩 기간(LP); 및 10 내지 14000, 바람직하게는 50 내지 9000 초, 더 바람직하게는 100 내지 5000 초 및 가장 바람직하게는 100 내지 800 초 사이의 침지 기간(SP)을 갖도록 메모리(M) 내의 프로그램을 프로그래밍할 수 있다.
따라서, 제1 기간(T1)은 플러싱 기간(FP), 로딩 기간(LP), 및/또는 침지 기간(SP)을 포함할 수 있다. 전체 기간(T1) 동안, 제1 전구체는 침윤성 재료에 침윤하고 흡수될 수 있다.
순차 제어기의 프로세서 상에서 실행되는 경우, 단계(52)에서 1 내지 20000, 바람직하게는 20 내지 6000, 더 바람직하게는 50 내지 4000, 및 가장 바람직하게는 100 내지 2000 초의 제1 기간(T1) 동안 침윤 장치가 제1 전구체를 제공하는 프로그램으로 순차 제어기(40)의 메모리(M)를 프로그래밍할 수 있다. 이 방식으로, 침윤성 재료 내로 제1 전구체가 깊게 침윤하는 것을 보장한다.
단계(53)에서 제1 전구체의 일부가 제2 기간(T2) 동안 제거된다. 순차 제어기(40)는 제거 반응 챔버 밸브(36)를 개방하여 반응 챔버(2)로부터 제1 전구체를 진공 펌프(38)로 제거할 수 있다. 추가적으로, 퍼지 가스(34)는, 퍼지 밸브(24) 및 분배 반응 챔버 밸브(19)를 순차 제어기(40)로 개방함으로써 반응 챔버(2)를 플러싱하기 위한 퍼지 시스템이 제공될 수 있다. 버퍼 탱크 내에 퍼지 가스를 저장함으로써 퍼지 가스를 반응 챔버(2)에 더 신속하게 제공하기 위해 버퍼 탱크(18)를 사용할 수 있다.
순차 제어기(40)의 프로세서 상에서 실행되는 경우, 침윤 장치가 제1 전구체의 일부를 제거하는 제2 지속 시간(T2)을 제어하는 프로그램으로 순차 흐름 제어기(40)의 메모리(M) 내의 프로그램을 프로그래밍할 수 있다. 메모리(M)의 프로그램은 1 내지 20000, 바람직하게는 20 내지 6000, 보다 바람직하게는 50 내지 4000 초, 가장 바람직하게는 100 내지 2000 초 사이의 제2 기간(T2)으로 프로그래밍될 수 있다.
단계(54)에서, 전구체 분배 및 제거 시스템을 활성화하여 제3 지속 시간(T3) 동안 반응 챔버 내에 제2 전구체를 제공하고 유지시키는 순차 제어기(40)는, 제2 전구체를 반응 챔버(2)에 제공한다. 퍼지 밸브(24) 및 분배 반응 챔버 밸브(19)를 폐쇄하고, 제2 전구체 밸브(22)를 개방하며 제2 전구체 온도 제어기(33)가 제2 용기(31)를 가열하도록 활성화시켜 제2 용기(31)로부터 제2 전구체(29)를 기화시킴으로써, 분배 반응 챔버 밸브(19)의 상류에 있는 전구체 분배 및 제거 시스템의 덕트에 제2 전구체를 축적하도록, 순차 제어기(40)의 메모리를 프로그래밍할 수 있다. 제2 전구체는 버퍼 탱크(28)에 저장될 수 있다. 덕트 및 버퍼 탱크(18)에 높은 증기 농도를 유지하기 위해 충분히 덕트를 가열하기 위해, 가열 제어기(16)는 가열 요소(17)를 제어할 수 있다. 그 다음, 순차 제어기(40)의 메모리(M)는, 짧은 시간 동안 반응 챔버(2)로 제2 전구체(28)를 전달하기 위해 밸브(20)를 개방하도록 프로그래밍될 수 있다.
플러싱 기간(FP), 로딩 기간(LP), 및 침지 기간(SP)는 제1 전구체와 관련하여 설명되었다. 순차 제어기(40)의 프로세서 상에서 실행되는 경우, 침윤 장치가 도 2b에 설명된 제2 전구체의 플러싱 기간(FP), 로딩 기간(LP), 및/또는 침지 기간(SP)으로 제3 기간(54)을 운영시키는 프로그램을 순차 제어기의 메모리(M)에 제공할 수 있다. 제3 기간(T3) 전체 동안, 제2 전구체는 침윤성 재료에 침윤하고 침윤성 재료 내에 흡수된 제1 전구체 유도체와 반응할 수 있다. 침윤된 제1 전구체 유도체와의 반응 결과는 침윤성 재료가 침윤 재료로 강화되는 결과를 갖는다.
선택적으로, 침윤 사이클은 제2 전구체의 일부가 제4 기간(T4) 동안 제거될 수 있는 단계(55)를 가질 수 있다. 순차 제어기(40)는 제거 반응 챔버 밸브(36)를 개방하여 반응 챔버(2)로부터 제1 전구체를 진공 펌프(38)로 제거할 수 있다. 추가적으로, 퍼지 가스(34)는, 퍼지 밸브(24) 및 분배 반응 챔버 밸브(19)를 순차 제어기(40)로 개방함으로써 반응 챔버(2)를 플러싱하기 위한 퍼지 시스템이 제공될 수 있다.
침윤 장치의 순차 제어기(40)의 프로세서 상에서 프로그램을 실행하는 경우에 침윤 시퀀스를 N회(N은 1 내지 20, 바람직하게는 3 내지 15, 가장 바람직하게는 6 내지 12임) 반복할 수 있도록, 순차 제어기의 메모리(M)를 프로그래밍할 수 있다. 전구체가 침윤성 재료 내에 금속 또는 유전체 침윤 재료를 형성하도록, 전구체(28, 29)를 선택할 수 있다.
도 1의 장치 내에서 도 2a 및 도 2b의 프로그램에 따라 알루미늄 산화물(Al2O3), 실리콘 산화물(SiO2), 실리콘 질화물(SiN), 실리콘 산질화물(SiON), 실리콘 탄질화물(SiCN), 실리콘 탄화물(SiC), 티탄 탄화물(TiC), 알루미늄 질화물(AlN), 티탄 질화물(TiN), 탄탈륨 질화물(TaN), 텅스텐(W), 코발트(Co), 티탄 산화물(TiO2), 탄탈륨 산화물(Ta2O5), 지르코늄 산화물(ZrO2) 또는 하프늄 산화물(HfO2)로 침윤성 재료를 침윤하도록, 제1 전구체 및 제2 전구체를 이용할 수 있다.
선택적으로, 금속 또는 유전체와 같은 침윤 재료는 침윤 장치로 침윤성 재료의 전체 부피의 상부에 배치될 수 있다. 예를 들어, 침윤성 재료가 패턴을 더욱 넓히게 하고 에칭 저항성을 더 갖도록 패터닝되는 경우, 이를 수행할 수 있다.
도 3은 추가 구현예에 따른 순차적 침윤 장치를 도시한다. 반응 챔버(2)는 기판 홀더(10) 상에 기판(12)을 제공한다. 전구체 분배 및 제거 시스템은 입구 포트(66)를 통해 반응 챔버(2)의 일 측면으로부터 기판(12)으로 제1 또는 제2 전구체를 제공한다. 입구 포트(66)는 버퍼 탱크(18)를 구비할 수 있고 밸브(19)로 폐쇄될 수 있다. 반응 챔버(2)로부터 다른 측면 상의 전구체를 제거하기 위해 분배 및 제거 시스템에 출구 포트(67)를 제공한다. 이 구성에서, 반응 챔버(2)는 교차 흐름 반응 챔버로 전구체가 기판 위로 수평으로 흐른다.
기판(12)을 유지하기 위한 기판 홀더(10)는 상하로 이동 가능할 수 있다. 기판 홀더(10)는 반응 챔버(2)의 상부 부위의 에지(68) 아래로 이동 가능할 수 있어서, 기판 핸들러(미도시)가 기판을 기판 홀더(10)에 제공하거나 이로부터 제거시킨다. 이를 위로 이동시킴으로써, 반응 챔버는 다시 폐쇄될 수 있다. 기판 홀더(10)는 기판(12) 가열을 위해 제3 가열 요소를 포함할 수 있다.
도 3에 따른 구현예의 이점은, 반응 챔버(2)가 단일 기판 반응 챔버(2)의 경우 0.5 내지 1 리터의 소량 부피를 가질 수 있다는 점이다. 소량 부피는 전구체 사용을 적게 하는 것이 가능하다. 따라서, 기판과 반응 챔버 상부 사이의 공간은 1 cm 미만, 바람직하게는 5 mm 미만, 가장 바람직하게는 3 mm 미만일 수 있다.
도 4는 추가 구현예에 따른 순차적 침윤 장치를 도시한다. 반응 챔버(2)는 샤워헤드(69)를 포함한다. 샤워헤드(69)는 반응 챔버(2)의 상부 부위에 제공될 수 있다. 샤워헤드(61)는 전구체 분배 및 제거 시스템과 연결되어 기판(12)의 표면에 제1 전구체(28) 또는 제2 전구체(29)를 바로 제공할 수 있다. 전구체 분배 및 제거 시스템은 개구(67)에 의해 제1 전구체(28) 또는 제2 전구체(29)를 제거할 수 있다. 퍼지 시스템은 또한 반응 챔버(2)를 퍼지하기 위해 샤워헤드(69)에 연결될 수 있다.
샤워헤드(69)는 또한 전구체 분배 및 제거 시스템과 연결되어 반응 챔버(2)로부터 제1 또는 제2 전구체를 제거할 수 있다. 이러한 경우 개구(67)는 반응 챔버(2)를 퍼지하기 위해 퍼지 시스템에 연결될 수 있다.
기판(12)을 유지하기 위한 기판 홀더(10)는 상하로 이동 가능할 수 있다. 기판 홀더(10)는 기판(12) 가열을 위해 제3 가열 요소를 포함할 수 있다. 이 구현예의 장점은, 샤워헤드가 기판의 표면으로부터 전구체를 신속하게 제공하고 제거하면서, 부피는 2 내지 5리터, 바람직하게는 3 내지 4리터 사이로 여전히 허용 가능하다.
도 5, 도 6, 도 7, 도 8 및 도 10a 내지 도 10c는 순차적 침윤 합성 장치의 상이한 구성을 보여준다. 도 5, 도 6, 도 7, 도 8 및 도 10에 따른 순차적 침윤 합성 장치는 도 1 및 도 2와 관련하여 설명된 것과 동일한 전구체 분배 및 제거 시스템을 사용할 수 있다.
도 5는 추가 구현예에 따른 순차적 침윤 장치를 도시한다. 상기 장치는, 50 내지 200 리터의 부피를 갖고, 25 내지 250매의 기판용인 배치식 반응기 챔버(70)를 포함한다. 기판 핸들러로 25 내지 250매의 기판을 수용하기 위해, 기판 홀더가 구비된 보트(71) 내에 기판을 로딩할 수 있다. 기판을 갖는 보트(71)는 하단으로부터 한 번 반응 챔버(70)로 이동될 수 있다. 보트(70)의 바닥 부분(71a)은 반응 챔버(70)를 밀폐할 수 있다. 가열 요소(40)는 반응 챔버(70)의 온도를 제어하기 위해 제공될 수 있다. 제1 및 제2 전구체는 유입구(72)를 구비할 수 있고, 전구체 분배 및 제거 시스템의 유출구(73)를 통해 제거될 수 있다. 가스 흐름을 제어하기 위해 밸브를 사용할 수 있고, 기화된 전구체가 반응 챔버(70) 내에서 그들의 끓는점 이상의 온도에서 유지되도록 하기 위해 주의를 기울여야 한다. 유입구(72) 및 유출구(73)뿐만 아니라 밸브(예, 반응 챔버 밸브(36))까지의 온도를 제어하는 가열 요소를 가짐으로써, 이것을 할 수 있다.
장치가 액체 흐름 제어기 및 기화기를 포함하는 직접식 액체 인젝터(DLI)를 구비하는 경우, 액체 흐름 제어기는 제1 또는 제2 전구체를 기화시키는 기화기로의 액체 흐름을 제어할 수 있다. 흐름 제어기와 기화기 사이의 액체 흐름을 가열할 필요가 없을 수 있다. 기화기는 제1 또는 제2 전구체를 바로 기화시키도록 가열될 수 있다.
기화기는 배치식 반응기 챔버 내에 제공되어, 챔버 내에 제1 또는 제2 전구체를 직접 제공할 수 있다. 배치식 반응기는 다수의 기판을 동시에 침윤시켜 장치의 처리량을 개선 가능하게 할 수 있다.
도 6, 도 7, 도 8 및 도 10a 내지 도 10c는 순차적 침윤 합성 장치의 상이한 구성을 보여준다. 도 6, 도 7, 및 도 8에 따른 순차적 침윤 합성 장치는 도 3 또는 도 4와 관련하여 설명된 반응 챔버(2)를 사용할 수 있다.
카세트(예, 전방 개방 일체식 공간, FOUP)를 다수의 기판으로 탑재하기 위한 카세트 로딩 스테이션(74)이 도시되어 있다. 제1 기판 핸들러(75)는 기판을 카세트에서 중간 로딩 스테이션(76)으로 이동시키기 위해 사용된다. 이어서, 제2 기판 핸들러(77)는 기판을 중간 로딩 스테이션(76)에서 기판 홀더(10)가 구비된 처리 스테이션으로 이동시키기 위해 사용된다. 도 6에서, 단일 기판 홀더(12)는 반응 챔버(2)에서 처리될 수 있는 단일 기판에 대해 제2 기판 홀더(77)에 의해 접근 가능하다. 도 6의 구현예에서, 4매의 기판을 동시에 처리할 수 있다.
제1 또는 제2 전구체를 적어도 2개의 반응 챔버에 제공하고 이로부터 제거하는 부분적으로 공통인 전구체 분배 및 제거 시스템이 제공된다. 부분적으로 공통인 전구체 분배 및 제거 시스템은 반응 챔버 밸브를 공유할 수 있다. 반응 챔버 밸브는 각각의 반응 챔버마다 또한 분리될 수 있다. 전구체 분배 및 제거 시스템의 공통 부품은 도 1과 관련하여 설명된 바와 같이 (분배) 반응 챔버 밸브(19)의 하류 및 (제거) 반응 챔버 밸브(36)의 하류에 추가로 제공될 수 있다. 이 방식으로, 전구체 분배 및 제거 시스템을 경제적으로 사용할 수 있다.
반응 챔버(2), 기판 홀더(10) 및/또는 전구체 분배 및 제거 시스템 내의 덕트 내지 임의의 반응 챔버 밸브까지 가열하기 위해 가열 요소를 제공할 수 있다. 전구체 분배 및 제거 시스템에 제공되는 적어도 하나의 버퍼 탱크를 포함할 수 있다.
도 7 및 도 8의 구현예에서, 처리 스테이션은 다수의 기판 홀더(10)를 구비하고 이동 가능한 (예를 들어, 회전 가능한) 몸체(78)(대안적으로 회전 기판 지지 프레임을 사용할 수 있음)가 구비되고, 이러한 몸체(78)(또는 지지 프레임)에 회전함으로써 모든 기판 홀더(10)는 제2 기판 핸들러(77)에 의해 기판을 구비할 수 있다. 반응 챔버(2)를 폐쇄하고 형성하기 위해서, 기판 홀더(10)를 위쪽으로 이동시킬 수 있다. 대안적이거나 추가적으로, 반응 챔버(들)로 공간을 폐쇄하도록 문(80)이 제공될 수 있다.
도 7의 구현예에서, 단일 기판을 처리하는 8개의 반응 챔버를 형성하는 8개의 기판 홀더일 수 있거나, 2개의 공유 반응 챔버를 형성하는 8개의 기판 홀더일 수 있으며, 각각의 공유 챔버는 4매의 기판을 처리한다.
도 7의 구현예에서, FOUP의 모든 기판을 동일한 몸체(78) 및 (이와 관련된) 반응 챔버에서 처리하도록, 특정 FOUP에서 카세트 로딩 스테이션(74) 상의 기판(정상적으로 25)을 특정 몸체(78)에 전용시키는 것이 가능할 수 있다. 잇점은, 하나의 FOUP의 처리에서 발견되는 오류가 있는 경우에 그것이 발생된 침윤 장치의 어느 부분인지 안다는 점이다. 도 7의 구현예에서, 4매의 기판을 2 번 동시 처리할 수 있다.
도 8의 구현예에서, 제1 및 제2 기판 핸들러(75, 77)는 2개의 기판을 동시에 취급하여 처리량을 증가시키기 위해, 이중 기판 지지부를 구비할 수 있다. 이동 가능한 몸체(78)는 축(82) 주위에서 회전되어서 상이한 기판 홀더(10)에 제2 기판 핸들러(78)의 접근을 제공할 수 있다. 도 8의 구현예에서, 단일 기판을 처리하는 16개의 반응 챔버를 형성하는 16개의 기판 홀더(10)일 수 있거나, 4개의 공유 반응 챔버를 형성하는 16개의 기판 홀더(10)일 수 있으며, 각각의 공유 챔버는 4매의 기판을 처리한다. 도 8의 구현예에서, 4매의 기판을 4 번 동시에 처리하여 장치에 높은 생산성을 줄 수 있다.
도 9는 도 7 및 도 8 구현예의 처리 스테이션의 단면을 개시하고 있다. 이동 가능한 몸체(78)는 둘 이상의 (예를 들어, 3, 4, 5, 또는 6) 기판(12)을 유지하기 위해 제공된다. 이동 가능한 몸체(78)를 밀폐부(81)에 대해 위쪽으로 이동시킬 수 있어서 둘 이상의 반응 챔버(2)를 폐쇄하고 생성한다. 이동 가능한 몸체(78)는 축(82) 주위에서 회전되어서 기판 홀더(10) 상의 상이한 기판(12)에 제2 기판 핸들러(78)의 접근을 제공할 수 있다.
제1 또는 제2 전구체를 적어도 2개의 반응 챔버(2)에 제공하고 이로부터 제거하는 부분적으로 공통인 전구체 분배 및 제거 시스템이 제공된다. 부분적으로 공통인 전구체 분배 및 제거 시스템은 반응 챔버 밸브(19 및 36)를 공유한다. 전구체 분배 및 제거 시스템의 공통 부분은 도 1과 관련하여 설명된 바와 같이 (분배) 반응 챔버 밸브(19)의 상류 및 (제거) 반응 챔버 밸브(36)의 하류에 추가로 제공된다. 이 방식으로, 전구체 분배 및 제거 시스템을 경제적으로 사용할 수 있다.
반응 챔버(2), 기판 홀더(10) 및/또는 전구체 분배 및 제거 시스템 내의 덕트 내지 임의의 반응 챔버 밸브(19, 36)까지 가열하기 위해 가열 요소를 제공할 수 있다. 전구체 분배 및 제거 시스템에 제공되는 적어도 하나의 버퍼 탱크를 포함할 수 있다.
각각 5개의 기판 홀더를 갖는 5개의 처리 스테이션이 도시되지 않은 구현예에서, 완전한 FOUP에 대한 짧은 공정 처리를 보장하는 25매의 기판을 갖는 완전한 FOUP를 동시에 처리하기 위해 5개의 기판 홀더가 각각 제공될 수 있다.
도 10a, 도 10b 및 도 10c는 본 발명에 따른 추가 구현예를 도시한다. 이 구현예에서, 처리 스테이션(90)은 기판 홀더(10)로서 기능할 수 있는 슬릿(91)을 제공한다(슬릿(91)을 통한 단면을 나타내는 도 10c 참조). 카세트(예, 전방 개방 일체식 공간, FOUP)를 다수의 기판으로 탑재하기 위한 카세트 로딩 스테이션(74)이 제공된다. 제1 기판 핸들러(미도시되나 도 6 및 도 7에서의 제1 기판 핸들러(75)와 유사)는 기판을 카세트에서 중간 로딩 스테이션(미도시되나 도 6 및 도 7의 중간 로딩 스테이션(76)과 유사)으로 이동시키기 위해 사용될 수 있다. 제2 기판 핸들러(미도시되나 도 6 및 도 7에서 제2 기판 핸들러(77)와 유사)는 중간 로딩 스테이션으로부터 슬릿(91)에 기판을 제공할 수 있다. 도어는 슬릿(91)을 닫아 반응 챔버를 생성할 수 있고, 기판은 처리 스테이션(90)에서 처리될 수 있다.
부분적으로 공통인 전구체 분배 및 제거 시스템(93)은 슬릿(91) 내의 모든 기판에 제1 또는 제2 전구체를 동시에 제공하고 모든 기판으로부터 제거하도록 제공될 수 있다. 카세트 스테이션(74)에서 25매의 기판을 갖는 완전한 FOUP가 5개의 처리 스테이션(90)에서 처리될 수 있다는 장점을 갖는 처리 스테이션(90)에서 5매의 기판을 동시에 처리할 수 있다. 장치는 8개의 처리 스테이션(90)을 갖기 때문에, 완전한 FOUP에 대한 짧은 공정 처리 시간을 동시에 보장하는 40매의 기판을 공정을 처리하는 것이 가능할 수 있다.
처리 스테이션(90) 내의 슬릿(91) 내 반응 챔버 및/또는 전구체 분배 및 제거 시스템(93) 내의 덕트를 가열하기 위해 제1 가열 요소를 제공할 수 있다. 유리하게는, 전구체 분배 및 제거 시스템(93) 내의 반응 챔버 밸브 중 임의의 것까지 이를 할 수 있다. 적어도 하나의 버퍼 탱크가 전구체 분배 및 제거 시스템(93) 내에 제공될 수 있다.
도시되고 설명된 구체적인 적용예는 본 발명의 예시이자 최적 실시모드이며, 어떤 방식으로도 양태와 적용예의 범주를 달리 제한하도록 의도되지 않는다. 실제로, 시스템의 종래의 제조, 연결, 조제 및 다른 기능적 양태는 간결성을 위해 상세히 기술되지 않을 수 있다. 또한, 다양한 도면들에서 도시된 연결선들은 다양한 요소들 사이의 예시적인 기능 관계 및/또는 물리적 결합을 표시하려는 의도이다. 많은 대안 또는 추가적인 기능적 관계 또는 물리적 연결은 실질적인 시스템에 존재할 수 있고/있거나 일부 구현예들에서는 없을 수 있다.
본원에 기술된 구성 및/또는 접근법은 본질적으로 예시적인 것이며, 다양한 변형이 가능하기 때문에, 이들 특정 구현예 또는 실시예가 제한적인 의미로 고려되어서는 안 된다는 것을 이해해야 한다. 본원에 설명된 특정 루틴 또는 방법은 임의의 수의 처리 전략 중 하나 이상을 나타낼 수 있다. 따라서, 도시된 다양한 동작은 도시된 시퀀스에서, 상이한 시퀀스에서 수행되거나, 경우에 따라 생략될 수 있다.
본 개시의 요지는 본원에 개시된 다양한 공정, 장치, 시스템, 및 구성, 다른 특징, 기능, 행위 및/또는 성질의 모든 신규하고 비자명한 조합 및 하위조합뿐만 아니라 임의의 그리고 모든 이들의 등가물들을 포함한다.
Claims (25)
- 순차적 침윤 합성 장치로서,
적어도 하나의 기판을 유지하기 위해 기판 홀더를 구비한 반응 챔버;
기상 제1 또는 제2 전구체를 상기 반응 챔버에 제공하고 상기 반응 챔버로부터 제거하기 위해 하나 이상의 반응 챔버 밸브를 포함하는 전구체 분배 및 제거 시스템; 및
상기 하나 이상의 반응 챔버 밸브에 작동 가능하게 연결되고, 상기 기상 제1 및 제2 전구체로 상기 반응 챔버 내의 상기 기판 상에 제공되는 침윤성 재료를 순차적으로 침윤시키도록 프로그래밍되는 순차 제어기를 포함하되, 상기 장치는, 상기 반응 챔버에서 적어도 하나의 상기 반응 챔버 밸브까지의 온도를 제어하기 위해 구성되고 배열되는 가열 시스템을 구비하는 장치. - 제1항에 있어서, 상기 장치는 상기 반응 챔버에서 상기 제1 또는 제2 전구체의 압력을 0.001 내지 1000 토르 사이로 유지하도록 구성되고 배열되며, 상기 가열 시스템은, 침윤 동안에 20 내지 450°C인 상기 반응 챔버 내 상기 제1 또는 제2 전구체의 압력에서, 상기 반응 챔버에서 적어도 하나의 상기 반응 챔버 밸브까지의 온도를 상기 제1 또는 제2 전구체의 적어도 끓는점으로 제어하도록 구성되고 배열되는 장치.
- 제1항에 있어서, 적어도 하나의 반응 챔버 밸브는 게이트 밸브, 압력 릴리프 밸브, 또는 펌프를 포함하여 상기 가스 흐름을 제어하고, 상기 가열 시스템은, 상기 반응 챔버에서 상기 반응 챔버 밸브까지의 온도를 제어하도록 구성되고 배열되는 장치.
- 제1항에 있어서, 적어도 하나의 반응 챔버 밸브는 액체 주입 시스템 내에 액체 흐름 제어기를 포함해서 기화기로의 액체 흐름을 제어하여 상기 제1 또는 제2 전구체를 기화시키고, 상기 가열 시스템은, 상기 반응 챔버 내 상기 제1 또는 제2 전구체 압력에서 상기 기화기로부터 상기 반응 챔버까지의 상기 온도를 상기 제1 또는 상기 제2 전구체의 적어도 끓는점으로 제어하도록 구성되고 배열되는 장치.
- 제1항에 있어서, 상기 전구체 분배 및 제거 시스템은 기상 전구체를 제공하거나 제거하기 위해 상기 반응 챔버와 적어도 하나의 반응 챔버 밸브 사이에 덕트를 포함하고, 상기 덕트의 온도를 제어하기 위해 상기 덕트 주위에 상기 가열 시스템을 제공하는 장치.
- 제1항에 있어서, 상기 전구체 분배 및 제거 시스템은 상기 반응 챔버 내에 상기 제1 또는 제2 전구체를 제공하기 전, 상기 전구체의 온도를 상기 반응 챔버의 온도보다 0 내지 50°C 미리 높게 제어하도록 구성되고 배열되는 제2 가열 시스템을 포함하는 장치.
- 제1항에 있어서, 상기 전구체 분배 및 제거 시스템은 퍼지 가스로 상기 반응 챔버를 퍼지하기 위한 퍼지 시스템을 구비하는 장치.
- 제1항에 있어서, 상기 순차 제어기는, N 회 침윤 사이클 동안에 상기 장치가 침윤을 실행시키도록 프로그래밍되는 메모리를 포함하고, 상기 사이클은,
상기 반응 챔버 내에서 제1 지속 시간(T1) 동안에 상기 제1 전구체를 제공하고 유지하기 위해 상기 전구체 분배 및 제거 시스템으로 상기 반응 챔버 내에 상기 제1 전구체를 제공하는 단계;
상기 전구체 분배 및 제거 시스템을 활성화시킴으로써 적어도 제2 지속 시간(T2) 동안에 상기 기판으로부터 상기 제1 전구체의 일부를 제거하는 단계;
상기 전구체 분배 및 제거 시스템을 활성화시킴으로써 상기 반응 챔버 내에서 제3 지속 시간(T3) 동안에 상기 제2 전구체를 제공하고 유지하도록 상기 반응 챔버 내에 상기 제2 전구체를 제공하는 단계를 포함하는 장치. - 제8항에 있어서, 상기 순차 제어기는,
로딩 기간(LP) 동안에 어느 전구체도 제거하지 않으면서 상기 전구체 분배 및 제거 시스템으로 상기 반응기 챔버에 상기 제1 전구체를 제공하고,
침지 기간(SP) 동안에 상기 전구체 분배 및 제거 시스템을 비활성화시키면서 상기 반응 챔버 내에 상기 제1 전구체를 남기도록 구성되는 장치. - 제9항에 있어서, 상기 순차 제어기는,
상기 로딩 기간(LP) 전 및/또는 후의 플러싱 기간(FP) 동안에 어느 전구체도 제거하지 않으면서, 상기 전구체 분배 및 제거 시스템으로 상기 반응기 챔버에 상기 제1 전구체를 제공하도록 프로그래밍되는 장치. - 제9항에 있어서, 상기 순차 제어기는,
상기 반응 챔버 내에 상기 제1 또는 제2 전구체의 압력이 원하는 침윤 압력에 도달하는 경우, 상기 로딩 기간(LP)을 종료하도록 프로그래밍되는 장치. - 제8항에 있어서, 상기 순차 흐름 제어기는, 상기 기판으로부터 상기 제1 전구체의 일부를 제거하는 제2 지속 시간(T2) 보다 긴 상기 제1 전구체의 제공 지속 시간(T1)을 갖기 위해, 상기 전구체 분배 및 제거 시스템을 제어하도록 프로그래밍되는 장치.
- 순차적 침윤 합성 장치로서,
적어도 하나의 기판을 유지하기 위해 기판 홀더를 구비한 반응 챔버;
기상 제1 또는 제2 전구체를 상기 반응 챔버에 제공하고 상기 반응 챔버로부터 제거하기 위해 하나 이상의 반응 챔버 밸브를 포함하는 전구체 분배 및 제거 시스템; 및
상기 하나 이상의 반응 챔버 밸브에 작동 가능하게 연결되고 상기 기상 제1 및 제2 전구체로 상기 반응 챔버 내의 상기 기판 상에 제공되는 침윤성 재료를 순차적으로 침윤시키도록 프로그래밍되는 순차 제어기를 포함하되, 상기 장치는 상기 전구체 분배 및 제거 시스템에 제공되는 적어도 하나의 버퍼 탱크를 포함하는 장치. - 제13항에 있어서, 상기 버퍼 탱크는 상기 반응 챔버의 상류에 위치하는 분배 버퍼 탱크로 제1 또는 제2 전구체를 저장하고 상기 반응 챔버 부피의 0.1 내지 15 배의 부피를 갖는 장치.
- 제13항에 있어서, 상기 장치는 상기 반응 챔버의 온도를 공정 온도로 제어하도록 구성되고 배열되는 가열 시스템을 구비하고, 상기 버퍼 탱크는 상기 버퍼 탱크의 온도를 버퍼 탱크 온도로 제어하도록 구성되고 배열되는 제2 가열 시스템을 구비하는 장치.
- 제15항에 있어서, 상기 버퍼 탱크 온도는 상기 공정 온도보다 0 내지 50°C 높은 장치.
- 제15항에 있어서, 상기 공정 온도는 20 내지 450°C이고, 상기 순차 제어기는 반응 챔버 내에서 0.001 내지 1000 토르인 압력을 유지하도록 구성되고 배열되는 장치.
- 제13항에 있어서, 상기 버퍼 탱크는 상기 전구체 각각을 상기 버퍼 탱크 내에 직접 주입하기 위해 직접식 액체 인젝터(DLI) 기화기를 구비하는 장치.
- 제13항에 있어서, 상기 버퍼 탱크는 상기 버퍼 탱크에서 상이한 부피를 수용하기 위해 가요성 벨로우즈를 포함하는 장치.
- 제13항에 있어서, 상기 버퍼 탱크는 상기 반응 챔버의 상부 내에 또는 근처에 제공되는 장치.
- 제13항에 있어서, 상기 장치는 상기 전구체 분배 및 제거 시스템에 제공되는 제거 버퍼 탱크를 상기 반응 챔버의 하류에 포함하고, 상기 제거 버퍼 탱크는 상기 반응 챔버 밸브 중 하나가 개방되는 경우에 상기 버퍼 탱크 내에 가스를 수용하기 위해 상기 반응 챔버 부피의 1 내지 20 배의 부피를 갖는 장치.
- 제13항에 있어서, 상기 장치는 상기 제1 지속 시간(T1) 중 0.1 내지 5초 동안 불활성 가스의 펄스와 교번하면서, 0.5 내지 20의 상기 제1 전구체 펄스를 갖는 비연속적인 제1 전구체 흐름을 제공하기 위한 버블러를 포함하는 장치.
- 제13항에 있어서, 상기 반응 챔버는, 상기 반응 챔버의 상부 부위에 제공되고 상기 전구체 분배 및 제거 시스템과 연결되어, 상기 기판의 표면에 상기 제1 또는 제2 전구체를 제공하는 샤워헤드를 포함하는 장치.
- 제23항에 있어서, 상기 가스 분배 시스템은, 상기 반응 챔버를 퍼지하기 위해 상기 샤워 헤드와 연결 가능한 퍼지 시스템을 포함하는 장치.
- 순차적 침윤 합성 장치로서,
적어도 하나의 기판을 유지하기 위해 기판 홀더를 구비한 반응 챔버;
기상 제1 또는 제2 전구체를 상기 반응 챔버에 제공하고 상기 반응 챔버로부터 제거하기 위해 하나 이상의 반응 챔버 밸브를 포함하는 전구체 분배 및 제거 시스템; 및
상기 하나 이상의 밸브에 작동 가능하게 연결되고, 상기 기상 제1 및 제2 전구체로 상기 반응 챔버 내의 상기 기판 상에 제공되는 침윤성 재료를 순차적으로 침윤시키도록 프로그래밍되는 순차 제어기를 포함하되, 상기 장치는 단일 기판을 수용하도록 구성되고 배치되는 각각의 챔버가 적어도 2개인 반응 챔버를 포함하고, 상기 전구체 분배 및 제거 시스템은 동시에 상기 제1 또는 제2 전구체를 상기 적어도 2개인 반응 챔버에 제공하고 상기 적어도 2개인 반응 챔버로부터 제거하는, 부분적으로 공통인 전구체 분배 및 제거 시스템인 장치.
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