JP7184773B2 - 逐次浸透合成装置 - Google Patents

逐次浸透合成装置 Download PDF

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JP7184773B2
JP7184773B2 JP2019531204A JP2019531204A JP7184773B2 JP 7184773 B2 JP7184773 B2 JP 7184773B2 JP 2019531204 A JP2019531204 A JP 2019531204A JP 2019531204 A JP2019531204 A JP 2019531204A JP 7184773 B2 JP7184773 B2 JP 7184773B2
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reaction chamber
precursor
buffer tank
distribution
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ラエイメーカーズ，イーボ・ヨハネス
メイズ，ヤン・ビレム
クナプエン，ベルナー
カヘル，クシシュトフ・カミル
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アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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Description

本開示は、概ね、電子デバイスを製造するための装置および方法に関する。より具体的には、本開示は、浸透装置を用いて基材上に構造を形成することに関する。
トレンドが半導体デバイスをより小さいサイズに推し進めるにしたがい、種々のパターニング技術が生まれてきた。これらの技術には、スペーサー法クオドパターニング（ｓｐａｃｅｒ ｄｅｆｉｎｅｄ ｑｕａｄｒｕｐｌｅ ｐａｔｔｅｒｎｉｎｇ）、極紫外線リソグラフィー（ＥＵＶ）、およびスペーサー法ダブルパターニング（Ｓｐａｃｅｒ Ｄｅｆｉｎｅｄ Ｄｏｕｂｌｅ ｐａｔｔｅｒｎｉｎｇ）と組合せたＥＵＶが含まれる。更に、誘導自己組織化（ＤＳＡ）は、将来のリソグラフィー用途の選択肢と考えられている。ＤＳＡは、自己集合のためのパターンを画定するためにブロックコポリマーの使用を含む。使用されるブロックコポリマーは、ポリ（メチルメタクリレート）（ＰＭＭＡ）、ポリスチレン、またはポリ（スチレン－ブロック－メチルメタクリレート）（ＰＳ－ｂ－ＰＭＭＡ）を含み得る。他のブロックコポリマーは、潜在的に小さな寸法を可能にし得る新たな「高χ（ｈｉｇｈ－Ｃｈｉ）」ポリマーを含み得る。
上記のパターニング技術は、基材の高解像度パターニングを可能にするために、基材上に配置されるＥＵＶポリマーまたはＤＳＡブロックコポリマーレジストなどの浸透材料を利用することができる。高解像度およびラインエッジラフネスの両方の要求を満たすために、ポリマーレジストは通常薄い層であることができる。しかしながら、このような薄いポリマーレジスト層はいくつかの欠点を有することがある。特に、高解像度ポリマーレジストは、エッチング耐性が低く、高いラインエッジラフネスに悩まされる場合がある。この低いエッチング抵抗および高いラインエッジラフネスは、正しいパターン付けの下にある層への転写をより困難にし得る。
したがって、浸透材料、例えばパターン付き材料レジストなど、を浸透させて、浸透材料の属性を変化させることが有利であり得る。パターン付き材料の浸透を実施するために、最適化された浸透装置を有することが有利であり得る。
本発明の少なくとも一つの実施形態によれば、
少なくとも一つの基材を保持するための基材ホルダーを備えた反応チャンバーと、
気体状の第一および／または第二の前駆体を反応チャンバーに提供および反応チャンバーから除去する一つまたは複数の反応チャンバーバルブを備える、前駆体分配および除去システムと、
一つまたは複数の反応チャンバーバルブに動作可能に接続され、反応チャンバー内の基材上に提供された浸透材料の気体状の第一および第二の前駆体との逐次浸透を可能にするようにプログラムされる逐次制御器と、を備える、逐次浸透装置が提供される。
装置は、凝縮を避けるために反応チャンバーバルブの少なくとも一つまで、反応チャンバーからの温度を制御するよう構成および配置された加熱システムを備えてもよい。加熱システムは、反応チャンバーを加熱するための発熱体と、反応チャンバーと反応チャンバーバルブとの間の少なくとも一つのダクトを備え、当該チャンバーバルブの少なくとも一つまで、反応チャンバーからの温度を制御してもよい。温度は、反応チャンバー内の第一または第二の前駆体の圧力で、第一または第二の前駆体の少なくとも沸騰温度に制御され得る。
例えば、不活性ガスなどの混合ガスを有する第一または第二の前駆体の混合物が使用される場合、反応チャンバー内の第一または第二の前駆体の圧力は、当該前駆体の部分圧力としてもよい。部分圧力は、第一および／または第二の前駆体の浸透の間に到達し得る所望の最大圧力とし得る。
浸透プロセスの速度は、前駆体の（部分）圧力によって上昇し得る。したがって、高圧での加工は、有利なことに、スループットを最大化するが、反応チャンバーの非加熱部分および反応チャンバーと反応チャンバーバルブの間のダクト上の凝縮リスクを増加させ得る。反応チャンバーの気体状の第一または第二の前駆体の温度を反応チャンバーバルブまで制御することによって、反応チャンバーの凝縮リスクを最小化することができる。
加熱システムは、反応チャンバーおよび反応チャンバーから少なくとも一つの反応チャンバーバルブへのダクトの温度を、２０～４５０℃、好ましくは５０～１５０℃、より好ましくは６０～１１０℃、最も好ましくは６５～９５℃に制御するように構成され、かつ配置され得る。逐次制御器は、浸透中、反応チャンバーの第一および第二の前駆体の（部分）圧力が、０．００１～１０００Ｔｏｒｒ、好ましくは０．１～４００Ｔｏｒｒ、より好ましくは１～１００Ｔｏｒｒ、および最も好ましくは２～５０Ｔｏｒｒに到達および／またはそれを維持するように構成され、かつ配置され得る。
さらなる実施形態によれば、
少なくとも一つの基材を保持するための基材ホルダーを備えた反応チャンバーと、
気体状の第一または第二の前駆体を反応チャンバーに提供および反応チャンバーから除去する一つまたは複数の反応チャンバーバルブを備える、前駆体分配および除去システムと、
一つまたは複数の反応チャンバーバルブに動作可能に接続され、反応チャンバー内の基材上に提供された浸透材料の気体状の第一および第二の前駆体との逐次浸透を可能にするようにプログラムされる逐次制御器と、を備える、逐次浸透装置が提供される。装置は、前駆体分配および除去システム内に提供されたバッファタンクを備え得る。
バッファタンクは、第一または第二の前駆体を貯蔵するために、反応チャンバーの上流に位置付けられてもよい。バッファタンクは、反応チャンバーの０．１～１５倍、好ましくは０．３～３倍、さらにより好ましくは０．５～２倍の容積を有し得る。バッファタンクは、反応チャンバーが第一または第二の前駆体で充填される時、より迅速に充填されるため、それによってツールのスループットが増大するように、第一または第二の前駆体で充填されてよい。
またさらなる実施形態によれば、
少なくとも一つの基材を保持するための基材ホルダーを備えた反応チャンバーと、
気体状の第一または第二の前駆体を前記反応チャンバーに提供および前記反応チャンバーから除去する一つまたは複数の反応チャンバーバルブを備える、前駆体分配および除去システムと、
一つまたは複数のバルブに動作可能に接続され、反応チャンバー内の基材上に提供された浸透材料の気体状の第一および第二の前駆体との逐次浸透を可能とするようにプログラムされた逐次制御器と、を備える逐次浸透装置であって、それぞれ単一の基材を収容するように構成されおよび配置される少なくとも二つの反応チャンバーを備え、前駆体分配および除去システムは、少なくとも二つの反応チャンバーに第一または第二の前駆体を同時に供給する、および少なくとも二つの反応チャンバーから第一または第二の前駆体を同時に除去する部分的に共通の前駆体分配である、逐次浸透装置が提供される。
少なくとも二つの反応チャンバーを有することにより、装置のスループットが増大し得る。部分的に共通の第一または第二の前駆体流路および前駆体分配および除去システムによって提供される部分的に共通の除去流路を有することにより、装置内のハードウェアは簡略化され、より効率的に使用され得る。
従来の技術を超えて達成される本発明および利点を要約するために、本発明のある目的および利点について、本明細書において上に記載してきた。当然のことながら、必ずしもこうした目的または利点の全てが本発明の任意の特定の実施形態によって達成されなくてもよいことが理解されるべきである。それゆえ、例えば、本明細書に教授または示唆する通り、一つの利点または利点の一群を達成または最適化する形式で、本明細書に教授または示唆されてもよい、他の目的または利点を必ずしも達成することなく、本発明が具体化または実行されてもよいことを、当業者は認識するであろう。
これらの実施形態の全ては、本明細書に開示する本発明の範囲内であることが意図されている。当業者には、これらのおよび他の実施形態は、添付の図面を参照して、以下のいくつかの実施形態の発明を実施するための形態から容易に明らかとなり、本発明は、開示される全ての特定の実施形態にも限定されない。
図面の要素は、簡潔かつ明瞭にするために例示されており、必ずしも縮尺通りに描かれていないことが理解されよう。例えば、図内の要素のうちいくつかの寸法は、本開示の例示された実施形態の理解の向上を助けるために他の要素に対して相対的に誇張されている場合がある。
一実施形態による逐次浸透合成装置を図示する。 逐次浸透合成装置で使用するための本発明の少なくとも一つの実施形態による浸透方法を図示する。 逐次浸透合成装置で使用するための本発明の少なくとも一つの実施形態による浸透方法を図示する。 図３は、一実施形態による逐次浸透装置の反応チャンバーを図示する。 図４は、さらなる実施形態による逐次浸透装置の反応チャンバーを図示する。 図５は、バッチ式反応器を備える、一実施形態による逐次浸透装置の反応チャンバーを図示する。 逐次浸透合成装置の異なる構成を図示する。 逐次浸透合成装置の異なる構成を図示する。 逐次浸透合成装置の異なる構成を図示する。 逐次浸透合成装置の異なる構成を図示する。 図１０ａ、１０ｂおよび１０ｃは、逐次浸透合成装置の異なる構成を図示する。
いくつかの実施形態および実施例を以下に開示するが、本発明が、具体的に開示する本発明の実施形態および／または用途、並びにその明白な変更および均等物を超えて拡大することは、当業者により理解されるであろう。それゆえ、開示する本発明の範囲は、以下に記載し具体的に開示する実施形態によって限定されるべきでないことが意図される。
図１は、一実施形態による逐次浸透合成装置を図示する。装置は、鋼、アルミニウムまたは石英などの適切な材料で作製された反応チャンバー２を備える。上部に浸透材料を備えた基材１２は、基材開口部（図示せず）を介して基板ハンドラーによって基材ホルダー１０上の反応チャンバー２内に配置されてもよい。反応チャンバー２は、フランジによって一方の端で閉じられたチャンバーを形成し、それを通して、開口部の開閉を制御する少なくとも一つまたは複数の（分配）反応チャンバーバルブ１９を備える一つまたは複数の開口部を介してガスが導入される。
分配反応チャンバーバルブ１９は、反応チャンバー２への前駆体分配および除去システムの流体分配部分のアクセスを提供する。前駆体分配および除去システムは、分配反応チャンバーバルブ１９を介して反応チャンバーに第一または第二の前駆体２８、２９を提供し得る。第一の前駆体２８は、第一の前駆体ヒーター３２によって容器３０に含まれる液体または固体を蒸発させることにより、反応チャンバー２内へ気体として導入され、チャンバー２内への送達のために適切な蒸気圧を提供し得る。第一の前駆体ヒーター３２は、容器３０内の第一の前駆体に熱を提供し得る。同様に、第二の前駆体２９は、第二の前駆体ヒーター３３によって容器３１に含まれる液体または固体を蒸発させることにより、反応チャンバー２内へ気体として導入され、反応チャンバー２内への送達のために適切な蒸気圧を提供し得る。
分配バッファタンク１８は、ガスを貯蔵するために反応チャンバーバルブ１９の上流のガス分配および除去システムに提供されてもよい。バッファタンクは、反応チャンバー２の０．１～１５倍、好ましくは０．３～３倍、さらにより好ましくは０．５～２倍の容積を有し得る。バッファタンクは、反応チャンバーが第一または第二の前駆体で充填される時、より迅速に充填されるため、それによって装置のスループットが増大するように、第一または第二の前駆体で充填される。分配バッファタンク１８は加熱されてもよい。
図示した通り、第一および第二の前駆体用の流路およびバッファタンクは部分的に共通であってもよいが、それらはまた分離されていてもよい。別個のバッファタンクを備えた分離した流路により、両方のバッファタンクを独立して充填することが可能になり、装置のスループットおよび前駆体の使用効率が向上する。分離した流路の場合、各流路は別個の分配反応チャンバーバルブ１９を備えていてもよい。
前駆体分配および除去システムは、パージガス３４をパージバルブ２４および分配反応チャンバーバルブ１９を介して反応チャンバー２に供給するパージシステムを備えてもよい。図示した通り、パージガス、第一および第二の前駆体用の流路は部分的に共通であってもよいが、それらは部分的にまたは完全に分離されていてもよい。分離した流路の場合、各流路は別個の分配反応チャンバーバルブ１９を備えていてもよい。
パージガスは、窒素などの不活性ガスであってもよく、反応チャンバー２をパージするために使用され得る。また、パージガスを使用してバッファタンク１８をパージし得る。
随意に、バッファタンク１８と分配反応チャンバーバルブ１９との間の別個の排気（図示せず）は、分配反応チャンバーバルブ１９が閉じている間、バッファタンク１８をより効果的にパージするために、ポンプ３９に接続されてもよい。
別の方法としてまたは追加的に、パージシステムは、反応チャンバー２内にパージガスを直接提供するパージ反応チャンバーバルブ（図示せず）を介して、パージガスを反応チャンバー２に直接供給するよう構成および配置されてもよい。反応チャンバー内に直接パージガスを供給することにより、反応チャンバーがパージされる間、前駆体分配および除去システムを使用して前駆体で充填することが可能になる。このようにして、スループットを向上させることが可能になる。パージシステムはパージガスバッファチャンバーを備え、より効果的に駆動することができる。
反応チャンバーは、例えば、ゲートバルブなどの一つまたは複数の反応チャンバーバルブ３６を備えた一つまたは複数の開口部を介して前駆体分配および除去システムのガス除去部分に接続するフランジによって他の端で閉じられる。ガス除去ポンプ３９および随意に除去バッファタンク３８は、前駆体分配および除去システムのガス除去部分の一部とし得る。
除去バッファタンク３８は、ゲートバルブ３６の下流にあるガス除去システム内に提供され得る。除去バッファタンク３８は、反応チャンバーバルブ３６が開かれた時に除去バッファタンク内のガスを吸引するために、反応チャンバーの容積の１～３０倍、好ましくは５～１５倍の容積を有し得る。３００ｍｍの直径を有する基材用の反応チャンバー２の容積は、単一の基材反応チャンバーで容積０．５～１リットル、基材の上方にシャワーヘッドを備えた単一基材用の反応チャンバーで容積３～５リットル、および２５～２５０の基材用のバッチ式反応チャンバーで容積５０～２００リットルであってもよい。
反応チャンバー２は、基材を基材ホルダー１０に提供する開口部（図示せず）を備えていてもよい。ドアが備えられて、開口部を開閉し、基材ホルダー１２への基材ハンドラーによるアクセスが提供されてもよい。基材ホルダーはまた、反応チャンバー壁の一部を形成してもよく、基材ホルダー１０へのアクセスを提供するように可動であってもよい。
第一の前駆体２８は、基材１２上の浸透材料内に形成される浸透材料の要素を有する化合物であってもよい。第一の前駆体２８は、第一の前駆体バルブ２０、バッファタンク１８および分配反応チャンバーバルブ１９を介して反応チャンバー２に提供されてもよい。図１は、それぞれ第一および第二の前駆体２８および２９を含む二つの容器３０および３１を備えたシステムを示す。しかしながら、形成される浸透材料のタイプは、前駆体および容器の数を決定する。例えば、三元浸透材料が望ましい場合、装置は三つの容器および三つの前駆体バルブを含み得る。
また、容器３０および３１は、必要に応じてその他の適切な前駆体貯蔵手段と置き換えられてもよい。例えば、前駆体のうちの一つが固体であり得る場合、固体前駆体の昇華を促進するために特別に適合された容器が提供されてもよい。容器３０、３１のうちの一つは、加熱の必要のないように気体状の前駆体を備えていてもよい。
逐次制御器４０、例えばマイクロコントローラは、一つまたは複数の反応チャンバーバルブ１９、３６、前駆体バルブ２０、２２およびパージバルブ２４に動作可能に接続されてもよい。逐次制御器４０は、装置に、反応チャンバー２内の基材１２上に提供された浸透材料の第一および第二の前駆体２８、２９との浸透を実行させるようにプログラムされたプログラムを保存するためのメモリＭを備え得る。圧力センサーおよび／または温度センサー２６は、チャンバーの圧力および温度を監視してもよく、浸透のプロセス条件を最適化するために、動作中に逐次制御器４０と動作可能に接続されてもよい。逐次制御器４０のメモリＭに保存されたプログラムは、第一および第二の前駆体を反応チャンバー２に提供およびそこから除去するのに適切な時点で、バルブ１９、２０、２２、２４および３６を逐次開閉するようにプログラムされてもよい。前駆体バルブ２０、２２は加熱され得る。
装置は、例えば加熱抵抗ワイヤなどの第一の発熱体１４および温度センサー２６に動作可能に接続された加熱制御器１６を備える加熱システムを備えてもよい。一つまたは複数の温度センサー２６も圧力センサーを備えてもよい。加熱制御器１６は、逐次制御器４０に動作可能に接続されてもよい。温度センサー２６を使用して、反応チャンバー２内の温度を測定し、この温度について加熱制御器１６にフィードバックを提供し、反応発熱体１４の温度を調節してチャンバー２の温度を調節することができる。
加熱システム１６は、反応チャンバー２からの温度を反応チャンバーバルブ１９または３６のうちの少なくとも一つまで制御してもよい。したがって、第一の発熱体１４は、反応チャンバー２に沿って前述の反応チャンバーバルブ１９または３６の少なくとも一つまで延在し、反応チャンバー２を加熱することし得る。第一の発熱体１４は、反応チャンバー２および反応チャンバー２と前述の反応チャンバーバルブ１９または３６のうちの少なくとも一つとの間の少なくとも一つのダクトを加熱してもよい。第一の発熱体はまた、反応チャンバーバルブ１９、３６の一つを加熱して、前述のバルブ上の凝縮を回避し得る。
（分配）反応チャンバーバルブ１９と反応チャンバー２との間の前駆体流入ダクトは、第一の発熱体１４の一部を備えてもよい。前駆体流入ダクトに沿った第一の発熱体１４のこの部分は、流入ダクト内に延在する温度センサー２６と、前駆体流入ダクトの温度を調節する加熱制御器１６とにより個別に制御され得る。
反応チャンバー２と（除去）反応チャンバーバルブ３６との間の前駆体除去フローダクトは、第一の発熱体１４の一部を備えてもよい。前駆体除去フローダクトに沿った第一の発熱体１４のこの部分は、前駆体除去フローダクト内に延在する温度センサー２６と加熱制御器１６とにより個別に制御され得る。
このようにして、反応チャンバー２における凝縮を引き起し得るコールドスポットは、前駆体流入ダクトおよび前駆体除去フローダクトを回避し得る。前駆体の凝縮によって、前駆体のタイムリーな反応チャンバーからの効果的な除去ができなくなり、したがって、凝縮物はその後前駆体と反応して反応チャンバーおよび基材１２を汚染し得る粒子となり得る。前駆体を送達する流入ダクト内の粒子は特に多くの問題を引き起こし得る。
温度は、最適化された加工温度に設定され得る。浸透プロセスの速度は、圧力によって上昇し得る。したがって、より高い圧力での加工は有利なことに、スループットを最大化するが、凝縮のリスクを増加させる。反応チャンバー２内の第一または第二の前駆体の最大圧力における第一または第二の前駆体の沸騰温度は、凝縮を避けるために所望の最適化された加工温度より低くあるべきである。反応チャンバー２からの温度を、反応チャンバーバルブ１９、３６のうちの少なくとも一つまで制御することによって、凝縮のリスクが最小化され得る。また、容器３０および３１から反応チャンバーバルブ３６までの流路全体の温度を制御することが有利であり得る。
例えば、第一または第二の前駆体がトリメチルアルミニウム（ＴＭＡ）である場合、蒸気圧は次のようになる：
２０℃ 約９ Ｔｏｒｒ
４０℃ 約２５ Ｔｏｒｒ
６０℃ 約６４ Ｔｏｒｒ
８０℃ 約１４９ Ｔｏｒｒ
１００℃ 約３１３ Ｔｏｒｒ
１２８℃ 約７６０ Ｔｏｒｒ
これらの値から分かるように、加工圧力は、反応チャンバー内の温度を上昇させることによって実質的に上昇させることができる。しかしながら、前駆体と接触する装置に小さな部分があり、かつそれがわずかに低い温度を有する場合、望ましくない前駆体の凝縮の直接的なリスクがある。
例えば浸透材料を有するＴＭＡなどの前駆体の相互作用は、主に吸着および拡散を通してもよい。吸着および拡散の速度および吸着反応における平衡は、温度変化によって影響を受け得るため、温度は浸透に対して顕著な効果を有し得る。
浸透プロセスは、９０℃で最適であってもよく、１２０℃～１５０℃では、浸透はＴＭＡに対して良好でなくなる。これは、吸着ベースのプロセスに予期され得る。より高い温度では、吸着反応の平衡は、別々のＴＭＡおよびポリマー種の方にシフトし得る。２０～４００、好ましくは５０～１５０、より好ましくは６０～１１０、最も好ましくは６５～９５℃の加工温度が、したがって好ましい。
加熱システムは、したがって、反応チャンバーおよび反応チャンバーからのダクトの温度を、少なくともそれらのそれぞれの反応チャンバーバルブまで、２０～４５０℃に、好ましくは５０～１５０℃、より好ましくは６０～１１０℃、最も好ましくは６５～９５℃に制御するように構成され、かつ配置され得る。逐次制御器内のメモリＭは、装置が、浸透中、凝縮を回避するため、反応チャンバーの第一および第二の前駆体の圧力を、０．００１～１０００Ｔｏｒｒ、好ましくは０．１～４００Ｔｏｒｒ、より好ましくは１～１００Ｔｏｒｒ、および最も好ましくは２～５０Ｔｏｒｒに到達させおよび／またはそれを維持するプログラムによってプログラムされ得る。このようにして、前駆体ＴＭＡの使用に関して最適な加工温度および圧力を有しながら、装置の凝縮を回避するための十分な安全マージンを作り出す。
装置は、液体流量調節器および気化器を備える直接液体インジェクタ（ＤＬＩ）を備え得る。液体流量調節器は、気化器への液体の流れを制御して、第一または第二の前駆体を蒸発させ得る。流量調節器と気化器との間を流れる液体を加熱する必要がない場合がある。気化器は、第一または第二の前駆体を蒸発させるために加熱され得る。加熱システムは、反応チャンバー２からの温度を、気化器まで、少なくとも反応チャンバー２内の第一および第二の前駆体の圧力での第一または第二の前駆体の沸騰温度に制御し、凝縮を回避するように構成され、かつ配置され得る。気化器は、反応チャンバー内で、反応チャンバー内の蒸発した前駆体を直接提供するように構成および配置され得る。気化器はまた、装置の前駆体分配および除去システム内に構成および配置されてもよい。
装置の前駆体分配および除去システムは、前駆体分配および除去システムに提供される少なくとも一つのバッファタンク１８、３８を備え得る。バッファタンクは、気体状の第一または第二の前駆体２８、２９を貯蔵するために反応チャンバー２の上流に位置付けられた分配バッファタンク１８であってもよく、反応チャンバー２の容積の０．１～１０倍、好ましくは０．３～３倍、さらにより好ましくは０．５～２倍の容積を有する。３００ｍｍの直径を有する基材用の反応チャンバー２の容積は、単一の基材反応チャンバーで容積０．５～１リットル、基材の上方にシャワーヘッドを備えた単一基材用の反応チャンバーで容積３～５リットル、および２５～２５０の基材用のバッチ式反応チャンバーで容積５０～２００リットルであってもよい。
分配バッファタンク１８は、直接液体インジェクタ（ＤＬＩ）気化器を備え、バッファタンク内の気体状の前駆体を直接注入してもよい。分配バッファタンク１８は、バッファタンク内に異なる容積を収容する可撓性ベローズを備え得る。分配バッファタンク１８は、反応チャンバー２の上部またはその近くに提供され、反応チャンバー２への短い送達ラインを有し、同時に反応チャンバーによって加熱されてもよい。
装置は、第二の発熱体１７を備え、バッファタンク１８および／または前駆体分配および除去システムの液体分配部分のダクトの温度を制御してもよい。これらの部分の温度は、反応チャンバー２の温度より０～５０、より好ましくは０．１～２０、さらに最も好ましくは０．２～１０℃高く制御され得る。第二の発熱体１７は、加熱制御器１６によって制御され得る。第二の温度／圧力センサー（図示せず）は、前駆体バッファタンク１８および／または流体分配部分内のダクトに提供され、加熱制御器１６に動作可能に接続されて制御を向上させ得る。バッファタンク１８を反応チャンバー２より高温で有することにより、分配反応チャンバーバルブ１９を開いた後、より小さいサイズのバッファタンクが短期間に反応チャンバー２を充填する必要があるように、前駆体のバッファタンク１８のより高い蒸気圧を維持することが可能になる。
第一および第二の発熱体１４および１７は、装置の関連する部分の周りに巻かれる抵抗ワイヤであってもよい。良好な温度断熱および、約９０℃の比較的低い動作温度では、そのような実施形態が有効である。第一および第二の発熱体１４、１７は、複数の温度センサーを有するマルチゾーン発熱体であり、ツールのあらゆる部分の温度をより正確に制御してもよい。
前駆体分配および除去システムは、前駆体を提供するためのバブラーを備え得る。バブラーは、０．１～２００の第一の前駆体のパルスを有する不連続な前駆体流を提供し得、好ましくは１～３秒間と混合ガスのパルスを０．０１～２、好ましくは０．３～１秒間とを交互に行う。
前駆体分配および除去システムは、直接液体インジェクタ（ＤＬＩ）気化器を備え、反応チャンバー２内、分配バッファタンク１８内、または分配反応チャンバーバルブ１９の上流の前駆体分配および除去システムのその他のダクト内に、気体状の前駆体を直接注入してもよい。
前駆体分配および除去システムは、除去反応チャンバーバルブ３６の後、しかし除去ポンプ３９の前、反応チャンバーの下流の前駆体分配および除去システムに提供される、除去バッファタンク３８を有し得る。除去バッファタンクは、除去反応チャンバーバルブ３６が開かれた時にバッファタンク内のガスを吸引するために、反応チャンバーの容積の１～２０倍、好ましくは５～１５倍の容積を有し得る。
図１を参照すると、典型的な動作中に、第一の前駆体２８は、容器３０からの気相の第一の前駆体２８への曝露によって、基材上の浸透材料内に浸透される。第一の前駆体２８は、基材上の浸透材料と反応して、基材上の浸透材料中に浸透された化学吸着性または物理吸着性の誘導体となり得る。その後、第二の前駆体２９は、容器３１からの気相の第二の前駆体２９への曝露によって、基材上の浸透材料内に浸透される。第二の前駆体２９は、基材上の浸透材料中に浸透された第一の前駆体２８の化学吸着性または物理吸着性の誘導体と反応して、最終浸透材料となり得る。
第一または第二の前駆体を貯蔵するための容器３０、３１は、トリメチルアルミニウム（ＴＭＡ）、トリエチルアルミニウム（ＴＥＡ）、およびジメチルアルミニウムハイドライド（ＤＭＡＨ）からなる群から選択されるアルミニウムのアルキル化合物を貯蔵するよう構成および配置される。
容器３０、３１は、塩化チタン（ＩＶ）（ＴｉＣｌ）、タンタル（Ｖ）ペンタクロリド（ＴａＣｌ５）、および／または五塩化ニオブ（ＮｂＣｌ５）などの第一または第二の前駆体を貯蔵するように構成および配置され得る。
ジルコニウムまたはハフニウムの浸透のため、容器３０、３１は、ＺｒまたはＨｆ前駆体を貯蔵するよう構成および配置され得る。ＺｒまたはＨｆを浸透させる場合、ＺｒまたはＨｆ前駆体は、有機金属の（ｍｅｔａｌｏｒｇａｎｉｃ）前駆体、有機金属の（ｏｒｇａｎｏｍｅｔａｌｌｉｃ）前駆体、またはハライド前駆体を含んでいてもよい。いくつかの実施形態では、前駆体はハライドである。いくつかの他の実施形態では、前駆体はＨｆまたはＺｒのアルキルアミン化合物、例えばＴＥＭＡＺまたはＴＥＭＡＨである。
容器３０、３１は、水、オゾン、過酸化水素、アンモニア、およびヒドラジンからなる群から選択される酸化剤などの第一または第二の前駆体を貯蔵するように構成および配置され得る。
装置は、トリメチルアルミニウム（ＴＭＡ）、トリエチルアルミニウム（ＴＥＡ）、ジメチルアルミニウムハイドライド（ＤＭＡＨ）ジメチルエチルアミンアラン（ＤＭＥＡＡ）、トリメチルアミンアラン（ＴＥＡＡ）、Ｎ－メチルピロリジンアラン（ＭＰＡ）、トリ－イソブチルアルミニウム（ＴＩＢＡ）、トリｔｅｒｔブチルアルミニウム（ＴＴＢＡ）トリメチルホウ素およびトリエチルホウ素からなる群から好ましくは選択されるアルミニウムまたはホウ素炭化水素化合物である第一または二の前駆体を収容するための第一の容器３１、および塩化チタン（ＩＶ）（ＴｉＣｌ）、タンタル（Ｖ）ペンタクロリド（ＴａＣｌ５）、および五塩化ニオブ（ＮｂＣｌ５）からなる群から好ましくは選択される金属ハライドなどの第一および第二の前駆体の他方を収容するための第二の容器３１を備え得る。後者は、金属炭化物材料の浸透に好ましい場合がある。
図２ａおよび図２ｂは、図１の装置で使用するための本発明の少なくとも一つの実施形態による浸透方法を示す。方法は、基材を基材ハンドラーを用いて反応チャンバーに提供する第一の工程５０を含み、基材は基材上に少なくとも一つの浸透材料を有する。
浸透材料は多孔性であってもよい。気孔率は、浸透材料の全体積の一部分として浸透材料の空隙を測定することによって測定され得、それは０～１の値を有し得る。浸透材料は、全体積における空隙の部分が０．１より大きい、０．２より大きい、または０．３よりも大きい場合に、多孔性として認定され得る。
浸透材料はハードマスク材料であってもよく、例えば、スピンオンガラス、またはスピンオンカーボン層、窒化ケイ素層、反射防止コーティングまたはアモルファルカーボン膜を含む。ガラスまたはカーボン層を基材上にスピニングすることにより、スピンオンガラスまたはスピンオンカーボン層を設け、ハードマスク材料を提供することができる。さらに、ハードマスク材料は、ＳｉｃＯＨ、またはＳｉＯＣを含み得る。
一実施形態では、浸透材料は、パターン付き（フォト）レジスト層などのパターン付き層であってもよい。レジスト層はアニールされてもよい。アニール工程は、レジストから水分または他の汚染物質を脱気する、レジストを硬化させる、レジストの部分を基材表面から選択的に焼失させる、または必要な気孔率を設ける目的を有してもよい。
一実施形態では、ブロックコポリマー膜を有すること、およびブロックコポリマー膜の誘導自己組織化を促進してパターン付き層を形成することによって、パターン付き層が提供され得る。こうしたパターン付き層の浸透は、こうしたパターン付き層の品質を改善し得る。ブロックコポリマー膜は、例えば、低いエッチング抵抗を有してもよく、またコポリマーにパターンを浸透することによって、パターンのエッチング抵抗が改善され得る。
一実施形態では、パターン付き層は、リソグラフィー装置で曝露されるフォトレジストを有することによって提供され得る。こうしたパターン付き層の浸透は、こうしたパターン付き層の品質を改善し得る。パターン付きフォトレジスト層は、例えば、低いエッチング抵抗を有してもよく、またパターン付きフォトレジストを浸透させることにより、パターンのエッチング抵抗が改善され得る。
図２の工程５０の間、基材が図１の反応チャンバー２内に位置付けられた後、反応チャンバーおよび基材は、除去ポンプ３９によって反応チャンバー２から排除され得る。任意で、パージガス３４は、パージバルブ２４および分配反応チャンバーバルブ１９を介して反応チャンバー２を洗浄するためにパージシステムを備えてもよい。反応チャンバー２は、脱ガス強化のために加熱されてもよい。
メモリＭのプログラムは、浸透が開始される前に、反応チャンバー２からガスを除去するための前駆体分配および除去システムを起動するようにプログラムされ、パージシステムによりパージガスを提供して反応チャンバーを１～４０００秒間、好ましくは１００～２０００秒パージするようにプログラムされてもよい。メモリＭのプログラムは、汚染物質の脱ガス強化のために、反応チャンバー２を２０～４５０℃、好ましくは５０～１５０℃、最も好ましくは７０～１００℃の温度に加熱するようにヒーターシステム１６を起動するようにプログラムされてもよい。
その後、方法は、一つまたは複数の浸透サイクル中に、浸透材料が浸透材料で浸透され得る浸透方法５１を含む。各浸透サイクルは、以下の工程を含み得る。
工程５２は、第一の期間Ｔ１の間、第一の前駆体を反応チャンバー内の基材上の浸透材料に提供することを含む。逐次制御器４０のメモリＭには、逐次制御器４０のプロセッサ上で実行されたときに、第一の前駆体バルブ２０を開く事によって、および容器３２を加熱するように起動された第一の前駆体温度制御器３２を有することによって第一の容器３０から第一の前駆体２８を蒸発させることによって、浸透装置が、パージングバルブ２４と、分配反応チャンバーバルブ１９とを閉じるように、および第一の前駆体を、分配反応チャンバーバルブ１９の上流にある前駆体分配および除去システムのダクトに構築するようにするプログラムが提供されてもよい。第一の前駆体は、バッファタンク１８内に貯蔵されてもよい。発熱体１７は、加熱制御器１６によって制御されて、ダクトを十分に加熱して、第一の前駆体のダクトおよびバッファタンク１８内の高蒸気濃度を保つことができる。
次いで、逐次制御器４０のメモリＭのプログラムは、バルブ２０を短時間開いて、第一の前駆体２８を反応チャンバー２に送達するようにプログラムされてもよい。これは、洗浄期間ＦＰに、反応チャンバー２を第一の前駆体で洗浄するように、除去反応チャンバーバルブ３６を開くことで、および除去ポンプを起動することで行われてもよい。洗浄期間ＦＰも省略することができる。反応チャンバー２が単一の基材を収容するように構成され、配置された時、メモリ内のプログラムは、１～６０秒の間の、好ましくは２～３０秒の間の洗浄期間ＦＰの間、第一の前駆体流制御器を起動するようプログラムされてもよい。反応チャンバーが２～２５の基材を収容するように構成され、配置された時、メモリ内のプログラムは、１～１００の間、好ましくは２～５０秒間の洗浄期間を持つように、プログラムされうる。反応チャンバーが２６～２００の基材を収容するように構成され、配置された時、メモリ内のプログラムが１～１００の間、好ましくは５～５０秒の間の洗浄期間ＦＰを持つようにプログラムされる。
第一の前駆体はまた、逐次制御器４０のメモリＭにインストールされたプログラムによって除去反応チャンバーバルブ３６を閉じることによって、負荷期間ＬＰに、除去ポンプ３９でいかなる前駆体も除去しない一方で、反応チャンバー２に、前駆体分配および除去システムによって提供されうる。これにより、反応チャンバー２内の第一の前駆体の圧力蓄積が生じる。この蓄積は、反応チャンバー２内の第一または第二の前駆体の圧力が最大の所望浸透圧に達するとき、逐次制御器４０によって終了され得る。別の方法として、反応チャンバーの圧力が所定の所望の加工圧力よりも上に増加した時に開かれる、圧力放出バルブがあってもよいが、それは負荷期間ＬＰを終了することもあり得る。
続いて、第一の前駆体は、前駆体分配および除去システムに浸漬期間ＳＰの間、いかなる前駆体の提供も除去もさせない一方で、反応チャンバー２内で静止している状態を維持されてもよい。これは、メモリＭに保存されたプログラムに従って、逐次制御器４０が反応チャンバーバルブ１９および３６を閉じることによってなされ得る。反応チャンバー１２が単一の基材を収容するように構成され、配置された時、メモリＭ内のプログラムは、負荷期間ＬＰの１～３０００、好ましくは３～１０００、より好ましくは５～５００秒の間、および浸漬期間ＳＰは１０～９０００、好ましくは５０～５０００秒、より好ましくは１００～１０００秒の間、第一の前駆体流制御器を起動するようプログラムされることができる。反応チャンバー１２が２～２５の基材を収容するように構成され、配置された時、メモリ逐次制御器内のプログラムは、負荷期間ＬＰの１～３０００、好ましくは３～１０００、より好ましくは５～５００秒で、および浸漬期間ＳＰは１０～１２０００、好ましくは１５～６０００秒、より好ましくは２０～１０００秒の間でプログラムされることができる。反応チャンバー１２が２６～２００の基材を収容するよう構成され、配置された時、メモリＭ内のプログラムは、負荷期間ＬＰを１～３０００、好ましくは３～１０００、より好ましくは５～５００秒持つように、および浸漬期間ＳＰを１０～１４０００、好ましくは５０～９０００秒、より好ましくは１００～５０００秒、最も好ましくは１００～８００秒持つようにプログラムされ得る。
したがって、第一の期間Ｔ１は、洗浄期間ＦＰ、負荷期間ＬＰ、および／または浸漬期間ＳＰを含み得る。全期間Ｔ１の間、第一の前駆体は浸透し、浸透材料内に吸収され得る。
逐次制御器４０のメモリＭは、逐次制御器のプロセッサ上で実行されるときにプログラムでプログラムされてもよく、これにより工程５２で、浸透装置が、第一の期間Ｔ１の間１～２００００、好ましくは２０～６０００の間、より好ましくは５０と４０００の間、最も好ましくは１００～２０００秒の間で、第一の前駆体を提供する。このようにして、浸透材料に第一の前駆体を深く浸透することが確保され得る。
工程５３では、第二の期間Ｔ２の間、第一の前駆体の一部が除去される。逐次制御器４０は、除去反応チャンバーバルブ３６を開いて、反応チャンバー２から真空ポンプ３８を用いて第一の前駆体を除去し得る。さらに、パージガス３４は、パージバルブ２４および分配反応チャンバーバルブ１９を開いて、逐次制御器４０を用いて反応チャンバー２を洗浄するためにパージシステムを備えてもよい。バッファタンク１８は、バッファタンク内にパージガスを貯蔵することによって、反応チャンバー２内でより迅速にパージガスを提供するために使用され得る。
逐次流量調節器４０のメモリＭのプログラムは、逐次調節器４０のプロセッサ上で実行された時にプログラムでプログラムされてもよく、これによって浸透装置は第一の前駆体の部分を除去する第二の期間Ｔ２を制御する。メモリＭのプログラムは、１～２００００、好ましくは２０～６０００、より好ましくは５０～４０００、最も好ましくは１００～２０００秒の第二の期間Ｔ２でプログラムされ得る。
工程５４では、逐次制御器４０が前駆体分配および除去システムを起動して、反応チャンバーに第三の期間Ｔ３の間、第二の前駆体を提供および維持することにより、第二の前駆体が反応チャンバー２に提供される。逐次制御器４０のメモリは、パージバルブ２４および分配反応チャンバーバルブ１９を閉じ、第二の前駆体バルブ２２を開いて分配反応チャンバーバルブ１９の上流にある前駆体分配および除去システムのダクトに第二の前駆体を構築するように、および第二の前駆体温度制御器３３を起動させて第二の容器３１を加熱することによって第二の容器３１から第二の前駆体２９を蒸発させるようにプログラムされてもよい。第二の前駆体は、バッファタンク２８内に貯蔵されてもよい。発熱体１７は、加熱制御器１６によって制御されて、ダクトを十分に加熱して、ダクトおよびバッファタンク１８内の高蒸気濃度を保つことができる。次いで、逐次制御器４０のメモリＭは、バルブ２０を短時間開いて、第二の前駆体２８を反応チャンバー２に送達するようにプログラムされてもよい。
洗浄期間ＦＰ、負荷期間ＬＰ、及び浸漬期間ＳＰを、第一の前駆体と共に説明する。逐次制御器のメモリＭは、逐次制御器４０のプロセッサ上で実行された時に、浸透装置が、図２ｂで説明したように、洗浄期間ＦＰ、負荷期間ＬＰ、および／または第二の前駆体の浸漬期間ＳＰで第三の期間５４を実行するプログラムを備えてもよい。第三の期間Ｔ３全体の間、第二の前駆体は浸透材料を浸透し、浸透材料中の吸着した第一の前駆体誘導体と反応し得る。吸着した第一の前駆体誘導体との反応によって、浸透材料の浸透した材料の強化が得られる。
任意で、浸透サイクルは、第四の期間Ｔ４の間、第二の前駆体の一部を除去する工程５５を有してもよい。逐次制御器４０は、除去反応チャンバーバルブ３６を開いて、反応チャンバー２から真空ポンプ３８を用いて第一の前駆体を除去し得る。さらに、パージガス３４は、パージバルブ２４および分配反応チャンバーバルブ１９を開いて、逐次制御器４０を用いて反応チャンバー２を洗浄するためにパージシステムを備えてもよい。
逐次的制御器のメモリＭは、プログラムが浸透装置の逐次制御器４０のプロセッサ上で実行されるとき、浸透シーケンスはＮ回繰り返すことができ、Ｎは１～２０、好ましくは３～１５、最も好ましくは６～１２であるようにプログラムされ得る。前駆体２８および２９は、前駆体が浸透材料内の金属または誘電性浸透材料を形成するように選択されてもよい。
第一の前駆体および第二の前駆体は、図１の装置において一緒に利用されて、図２ａおよび２ｂのプログラムに従って、酸化アルミニウム（Ａｌ２Ｏ３）酸化シリコン、（ＳｉＯ２）、窒化ケイ素（ＳｉＮ）、オキシ窒化シリコン（ＳｉＯＮ）、炭窒化ケイ素（ＳｉＣＮ）、炭化ケイ素（ＳｉＣ）、炭化チタン（ＴｉＣ）、窒化アルミニウム（ＡｌＮ）、窒化チタン（ＴｉＮ）、窒化タンタル（ＴａＮ）、タングステン（Ｗ）、コバルト（Ｃｏ）、酸化チタン（ＴｉＯ２）、酸化タンタル（Ｔａ２Ｏ５）、酸化ジルコニウム（ＺｒＯ２）、または酸化ハフニウム（ＨｆＯ２）を用いて浸透材料を浸透させることができる。
任意で、金属または誘電体などの浸透材料も、浸透装置で浸透材料の全体積上に堆積され得る。これは、例えば、浸透材料がパターンをより広く、かつよりエッチング耐性とするためにパターン化される場合に行われ得る。
図３は、さらなる実施形態による逐次浸透装置を図示する。反応チャンバー２は基材ホルダー１０上に基材１２を備える。前駆体分配および除去システムは、第一または第二の前駆体を、エントリーポート６６を介して反応チャンバー２の一方の側面から基材１２へ提供する。入口ポート６６はバッファタンク１８を備えてもよく、バルブ１９で閉じることができる。出口ポート６７は、もう一方の側面上に、反応チャンバー２から前駆体を除去するために分配および除去システムに提供される。この構成では、反応チャンバー２は、前駆体が横方向に基材上に流れるクロスフローチャンバーである。
基材１２を保持するための基材ホルダー１０は、上下に可動であってもよい。基材ホルダー１０は、反応チャンバー２の上部の縁部６８の下に可動であり、基材ハンドラー（図示せず）を基材ホルダー１０から提供または除去することができる。反応チャンバーを動かすことによって、再び閉じることができる。基材ホルダー１０は、基材１２の加熱のための第三の発熱体を備えてもよい。
図３による実施形態の利点は、反応チャンバー２が、単一の基材反応チャンバー２のための０．５～１リットルの小容量を有し得ることである。小容量はより低量の前駆体の使用を可能にする。基材と反応チャンバーの上部の間の空間は、したがって、１センチメートル未満、好ましくは５ｍｍ未満、最も好ましくは３ｍｍ未満であり得る。
図４は、さらなる実施形態による逐次浸透装置を図示する。反応チャンバー２はシャワーヘッド６９を備える。シャワーヘッド６９は、反応チャンバー２の上部に提供されてもよい。シャワーヘッド６１は、前駆体分配および除去システムと接続して、第一または第二の前駆体２８、２９を基材１２の表面に直接提供することができる。前駆体分配および除去システムは、開口部６７によって第一または第二の前駆体２８、２９を除去してもよい。パージシステムはまた、反応チャンバー２をパージするためにシャワーヘッド６９に接続されてもよい。
シャワーヘッド６９はまた、第一または第二の前駆体を反応チャンバー２から除去するために、前駆体分配および除去システムと接続されてもよい。そのような場合、開口部６７は、反応チャンバー２をパージするためにパージシステムに接続されてもよい。
基材１２を保持するための基材ホルダー１０は、上下に可動であってもよい。基材ホルダー１０は、基材１２の加熱のための第三の発熱体を備えてもよい。この実施形態の利点は、容積が２～５リットル、好ましくは３～４リットルであることが許容される一方で、シャワーヘッドが基材表面に前駆体を迅速に提供し、かつ前駆体から前駆体を除去することである。
図５、６、７、８および１０ａ～１０ｃは、逐次浸透合成装置の異なる構成を示す。図５、６、７、８、および１０による逐次浸透合成装置は、図１および２と併せて説明されるように、同じ前駆体分配および除去システムを使用し得る。
図５は、さらなる実施形態による逐次浸透装置を図示する。装置は、５０～２００リットルの容積を有する２５～２５０の基材用のバッチ式反応チャンバー７０を備える。基材を基材ハンドラーを用いて２５～２５０基材を収容するために、基材ホルダーを備えるボート７１に基材を充填してもよい。基材を有するボート７１は、反応チャンバー７０内に下から一度に移動されてもよい。ボート７０の底部７１Ａは、反応チャンバー７０を封止し得る。発熱体４０は、反応チャンバー７０の温度を制御するために提供され得る。第一および第二の前駆体は、入口７２を備えてもよく、前駆体分配および除去システムの出口７３を介して除去されてもよい。バルブを使用してガス流を制御することができ、蒸発した前駆体が反応チャンバー７０内の沸騰温度より高い温度に保たれるようにして注意すべきである。これは、入口７２および出口７３の温度をバルブ（例えば、反応チャンバーバルブ３６）に制御するために発熱体を有することによって実施され得る。
装置が液体流量調節器および気化器を備える直接液体インジェクタ（ＤＬＩ）を備える場合、液体流量調節器は、第一または第二の前駆体を蒸発させる気化器への液体の流れを制御し得る。流量調節器と気化器との間を流れる液体を加熱する必要がない場合がある。気化器は、第一または第二の前駆体を直接蒸発させるために加熱され得る。
気化器は、バッチ式反応チャンバー内に提供されて、チャンバー内に第一または第二の前駆体を直接提供してもよい。バッチ式反応器は、同時に多数の基材を浸透させることができ、装置のスループットを改善し得る。
図６、７、８および１０ａ～１０ｃは、逐次浸透合成装置の異なる構成を示す。図６、７、および８による逐次浸透合成装置は、図３または図４と併せて説明した通り、反応チャンバー２を使用し得る。
カセットを充填するためのカセットローディングステーション７４（例えば、フロントオープニングユニファイドポッド「ＦＯＵＰ」）が複数の基材とともに示される。第一の基材ハンドラー７５は、カセットから中間ローディングステーション７６へ基材を移動させるために使用される。その後、第二の基材ハンドラー７７は、基材を中間ローディングステーション７６から基材ホルダー１０を備えた加工ステーションに移動させるために使用される。図６では、単一の基材ホルダー１２は、反応チャンバー２で加工できる単一の基材のための第二の基材ホルダー７７によってアクセス可能である。図６の実施形態では、四つの基材を同時に加工することができる。
少なくとも二つの反応チャンバーに第一または第二の前駆体を提供する、また少なくとも二つの反応チャンバーから第一または第二の前駆体を除去するための、部分的に共通の前駆体分配および除去システムが提供される。部分的に共通の前駆体分配および除去システムは、反応チャンバーバルブを共有してもよい。反応チャンバーバルブはまた、各反応チャンバーに対して個別であってもよい。前駆体分配および除去システムの共通部分は、図１と併せて説明されるように、（分配）反応チャンバーバルブ１９の下流および（除去）反応チャンバーバルブ３６の下流にさらに提供され得る。このようにして、前駆体分配および除去システムを経済的に使用することができる。
発熱体は、反応チャンバー２、基材ホルダー１０および／または前駆体分配および除去システム内のダクトを反応チャンバーバルブのいずれかまで加熱するために提供され得る。前駆体分配および除去システム内に少なくとも一つのバッファタンクが提供され得る。
図７および８の実施形態では、加工ステーションは複数の基材ホルダー１０を備え、可動（例えば、回転可能な）本体７８（代替的に、回転可能な基材支持フレームを使用してもよい）を備え、この本体７８（または支持フレーム）を回転することにより、すべての基材ホルダー１０が第二の基材ハンドラー７７によって基材を備えてもよい。基材ホルダー１０を上向きに移動して反応チャンバー２を閉じ、形成することができる。別の方法としてまたは追加的に、ドア８０が提供され、反応チャンバーとの空間を閉鎖することができる。
図７の実施形態では、単一の基材を加工する八つの反応チャンバーを形成する八つの基材ホルダーであってもよく、四つの基材を加工する反応チャンバーをそれぞれ共有する二つの共有反応チャンバーを形成する八つの基材ホルダーであってもよい。
図７の実施形態では、ＦＯＵＰ内のすべての基材が同じ本体７８および反応チャンバー（それに関連する）上で加工されるように、カセットローディングステーション７４上の特定のＦＯＵＰ内の基材（通常２５）を特定の本体７８のみに提供することが可能であり得る。一つのＦＯＵＰの加工にエラーが発生した場合、浸透装置のどの部分で発生したかを知ることができるという利点がある。図７の実施形態では、二×四つの基材を同時に加工することができる。
図８の実施形態では、第一および第二の基材ハンドラー７５、７７は、二つの基材を同時に取扱い、スループットを向上させるデュアル基材サポートを備え得る。可動本体７８は、軸８２の周りを回転して、第二の基材ハンドラー７８の異なる基材ホルダー１０へのアクセスを提供し得る。図８の実施形態では、単一の基材を加工する十六の反応チャンバーを形成する十六の基材ホルダー１０であってもよく、四つの基材を加工する反応チャンバーをそれぞれ共有する四つの共有反応チャンバーを形成する十六の基材ホルダー１０であってもよい。図８の実施形態では、四回×四つ基材を同時に加工することができ、装置に高生産性を付与する。
図９は、図７および８の実施形態の加工ステーションの断面を開示する。可動本体７８は、二つ以上の（例えば、３、４、５、または６）基材１２を保持するために提供される。可動本体７８は、シーリング８１に対して上向きに移動して、二つ以上の反応チャンバー２を閉じて作ることができる。可動本体７８は、軸８２の周りを回転して、第二の基材ハンドラー７８の基材ホルダー１０上の異なる基材１２へのアクセスを提供し得る。
少なくとも二つの反応チャンバーに第一または第二の前駆体を提供する、また少なくとも二つの反応チャンバー２から第一または第二の前駆体を除去するための、部分的に共通の前駆体分配および除去システムが提供される。部分的に共通の前駆体分配および除去システムは、反応チャンバーバルブ１９および３６を共有する。前駆体分配および除去システムの共通部分は、図１と併せて説明されるように、（分配）反応チャンバーバルブ１９の上流および（除去）反応チャンバーバルブ３６の下流にさらに提供される。このようにして、前駆体分配および除去システムを経済的に使用することができる。
発熱体は、反応チャンバー２、基材ホルダー１０および／または前駆体分配および除去システム内のダクトを反応チャンバーバルブ１９、３６のいずれかまで加熱するために提供され得る。前駆体分配および除去システム内に少なくとも一つのバッファタンクが提供され得る。
一実施形態では、五つの基材ホルダーをそれぞれ備えた図示されない五つの加工ステーションが提供され、２５の基材を備える完全なＦＯＵＰを同時に加工することができ、完全なＦＯＵＰのための短い加工時間が保証される。
図１０ａ、１０ｂおよび１０ｃは、本発明によるさらなる実施形態を図示する。この実施形態では、加工ステーション９０には、基材ホルダー１０として機能できるスリット９１が提供される（スリット９１を通した断面を示す図１０ｃを参照）。カセットを充填するためにカセットローディングステーション７４（例えば、フロントオープニングユニファイドポッド「ＦＯＵＰ」）が複数の基材とともに提供される。第一の基材ハンドラー（図示しないが、図６および７の第一の基材ハンドラー７５と類似する）が、基材をカセットから中間ローディングステーション（図示しないが、図６および７の中間ローディングステーション７６と類似する）に移動するために使用され得る。第二の基材ハンドラー（図示しないが、図６および７の第二の基材ハンドラー７７と類似する）は、基材を中間ローディングステーションからスリット９１に提供し得る。ドアは、スリット９１を閉じて反応チャンバーを作成し、基材を加工ステーション９０で加工してもよい。
部分的に共通の前駆体分配および除去システム９３は、スリット９１のすべての基材に第一または第二の前駆体を同時に提供、およびすべての基材から除去するように提供され得る。五つの基材は加工ステーション９０で同時に加工され得るが、カセットステーション７４において２５の基材を有する完全なＦＯＵＰを五つの加工ステーション９０で加工できるという利点を有する。装置は八つの加工ステーション９０を有するため、四十の基材を同時に加工することができ、完全なＦＯＵＰのための短い加工時間が保証される。
第一の発熱体は、加工ステーション９０および／または前駆体分配および除去システム９３のダクトのスリット９１内の反応チャンバーを加熱するために提供されてもよい。有利なことに、これは前駆体分配および除去システム９３の反応チャンバーバルブのいずれかまで行うことができる。前駆体分配および除去システム９３内に少なくとも一つのバッファタンクが提供され得る。
示され説明された特定の実施形態は、本発明およびその最良の形態を例示するものであり、態様および実施形態の範囲を何ら限定する意図はない。実際、簡潔さのために、従来の製造、関連、調製、およびシステムの他の機能的態様を詳細には説明しない場合がある。更に、様々な図に示される接続線は、様々な要素間の例示的な機能的関係および／または物理的結合を表すことを意図する。多くの代替的もしくは追加の機能的関係、もしくは物理的接続が実際のシステムに存在してもよく、および／またはいくつかの実施形態では存在しなくてもよい。
本明細書に記載される構成および／または方法は本質的に例示的であり、これらの特定の実施形態または実施例は、数多くの変形が可能であるので、限定的な意味で考慮されるべきではないことを理解されたい。本明細書に記載される特定のルーチンまたは方法は、任意の数の処理方策のうちの一つまたは複数を表す場合がある。それゆえ、例示された様々な動作は、例示されるシーケンスで実施されてもよく、他のシーケンスで実施されてもよく、または場合によっては省略されてもよい。
本開示の主題は、本明細書で開示される様々なプロセス、装置、システム、および構成、ならびに他の特徴、機能、動作および／または特性の、全ての新規かつ自明でない組合せおよび部分的組合せ、ならびにその任意のおよび全ての均等物を含む。

Claims (23)

  1. 逐次浸透合成装置であって、
    少なくとも一つの基材を保持するための基材ホルダーを備えた反応チャンバーと、
    前駆体分配および除去システムであって、
    気体状の第一および／または第二の前駆体を前記反応チャンバーに提供および前記反応チャンバーから除去する一つまたは複数の反応チャンバーバルブ、
    上流側の反応チャンバーバルブと前駆体バルブとの間に配置された少なくとも一つの分配バッファタンクであって、前記分配バッファタンクは、前記気体状の第一および／または第二の前駆体を一定量保存するように構成および配置される、分配バッファタンク、および
    下流側の反応チャンバーバルブとガス除去ポンプとの間に配置された除去バッファタンクであって、前記除去バッファタンクの容積は、前記反応チャンバーの容積よりも大きく、前記除去バッファタンクおよび前記ガス除去ポンプは、前記下流側の反応チャンバーバルブを開くと、前記除去バッファタンクが前記反応チャンバー内から一つまたは複数の気体を吸引するように構成および配置される、除去バッファタンク、
    を備える、前駆体分配および除去システムと、
    前記一つまたは複数の反応チャンバーバルブに動作可能に接続され、前記反応チャンバー内の前記基材上に提供された浸透材料の前記気体状の第一および第二の前駆体との逐次浸透を可能とするようにプログラムされた逐次制御器と、を備え、
    前記装置が少なくとも一つの前記反応チャンバーバルブまで前記反応チャンバーの温度を制御するように構成および配置される第一の加熱システムを備え、
    少なくとも一つの反応チャンバーバルブが、前記第一または第二の前駆体を蒸発させる気化器への液体の流れを制御する液体注入システム内の液体流量調節器を備え、前記第一の加熱システムが、前記気化器から前記反応チャンバーへの温度を、前記反応チャンバー内の前記第一または第二の前駆体の圧力で、少なくとも前記第一または第二の前駆体の沸騰温度に制御するように構成または配置される、装置。
  2. 前記装置が、前記反応チャンバー内の前記第一または第二の前駆体の圧力を０．００１～１０００Ｔｏｒｒの間に維持するように構成および配置され、前記第一の加熱システムが、前記反応チャンバーの温度を、少なくとも一つの前記反応チャンバーバルブまで、浸透中、前記反応チャンバー内の前記第一または第二の前駆体の圧力で、少なくとも前記第一または第二の前駆体の沸騰温度まで、２０～４５０℃の間に制御するように構成および配置される、請求項１に記載の装置。
  3. 少なくとも一つの反応チャンバーバルブがゲートバルブ、圧力リリーフバルブ、またはガス流を制御するポンプを備え、前記第一の加熱システムが前記反応チャンバーバルブまで前記反応チャンバー内の温度を制御するように構成および配置される、請求項１に記載の装置。
  4. 前記前駆体分配および除去システムが、気体状の前駆体を提供または除去するための、前記反応チャンバーと少なくとも一つの反応チャンバーバルブとの間のダクトを備え、前記第一の加熱システムが、前記ダクトの周りに提供されて前記ダクトの温度を制御する、請求項１に記載の装置。
  5. 前記前駆体分配および除去システムが、前記反応チャンバー内に前記第一または第二の前駆体を提供する前に、前記前駆体の温度を前記反応チャンバーの温度より０～５０℃高い予熱温度に制御するように構成および配置される第二の加熱システムを備える、請求項１に記載の装置。
  6. 前記前駆体分配および除去システムが、前記反応チャンバーをパージガスでパージするパージシステムを備える、請求項１に記載の装置。
  7. 前記逐次制御器が、前記装置に、
    前記前駆体分配および除去システムによって、前記反応チャンバー内に前記第一の前駆体を提供し、第一の期間Ｔ１の間、前記反応チャンバーに前記第一の前駆体を提供および維持することと、
    少なくとも第二の期間Ｔ２の間、前記前駆体分配および除去システムを起動することによって、前記基材から前記第一の前駆体の一部を除去することと、
    前記前駆体分配および除去システムを起動させることによって、第二の前駆体を前記反応チャンバーに提供し、第三の期間Ｔ３の間、前記反応チャンバー内に前記第二の前駆体を提供および維持することと、を含む、Ｎ回の浸透サイクル中、浸透を実行させるようにプログラムされたメモリを備える、請求項１に記載の装置。
  8. 前記逐次制御器が、
    負荷期間ＬＰの間、いずれの前駆体も除去しないまま、前記前駆体分配および除去システムを用いて前記第一前駆体を前記反応チャンバーに提供し、
    浸漬期間ＳＰの間、前記前駆体分配および除去システムを停止させた状態で、前記第一の前駆体を前記反応チャンバー内に留めるようにプログラムされる、請求項７に記載の装置。
  9. 前記逐次制御器が、
    負荷期間ＬＰの前および／または後、洗浄期間ＦＰの間、前駆体を除去しながら、前記前駆体分配および除去システムを用いて前記第一前駆体を前記反応チャンバーに提供するようにプログラムされる、請求項８に記載の装置。
  10. 前記逐次制御器が、
    前記反応チャンバー内の前記第一または第二の前駆体の圧力が所望の浸透圧に達するとき、負荷期間ＬＰを終了するようにプログラムされる、請求項８に記載の装置。
  11. 前記逐次流量調節器が、前記前駆体分配および除去システムを制御して、前記第一の前駆体を提供するＴ１の期間を、前記基材から前記第一の前駆体の部分を除去する前記第二の期間Ｔ２より長くするようにプログラムされる、請求項７に記載の装置。
  12. 逐次浸透合成装置であって、
    少なくとも一つの基材を保持するための基材ホルダーを備えた反応チャンバーと、
    気体状の第一または第二の前駆体を前記反応チャンバーに提供および前記反応チャンバーから除去する一つまたは複数の反応チャンバーバルブを備える、前駆体分配および除去システムと、
    前記一つまたは複数の反応チャンバーバルブに動作可能に接続され、前記反応チャンバー内の基材上に提供された浸透材料の前記気体状の第一および第二の前駆体との逐次浸透を可能にするようにプログラムされる逐次制御器と、
    前記前駆体分配および除去システム内に提供された少なくとも一つの分配バッファタンクであって、前記分配バッファタンクは、前記分配バッファタンクの温度を加工温度よりも高いバッファタンク温度に制御するように構成および配置される第二の加熱システムを備える、分配バッファタンクと、
    前記前駆体分配および除去システム内で下流側の反応チャンバーバルブとガス除去ポンプとの間に配置された除去バッファタンクであって、前記除去バッファタンクの容積は、前記反応チャンバーの容積よりも大きく、前記除去バッファタンクおよび前記ガス除去ポンプは、前記下流側の反応チャンバーバルブを開くと、前記除去バッファタンクが前記反応チャンバー内から一つまたは複数の気体を吸引するように構成および配置される、除去バッファタンクと、を備え、
    前記分配バッファタンクが、前記分配バッファタンク内に前記それぞれの前駆体を直接注入するための直接液体インジェクタ（ＤＬＩ）気化器を備える、装置。
  13. 前記分配バッファタンクが、前記気体状の第一または第二の前駆体を保存し、前記反応チャンバーの容積の０．１～１５倍の容積を有する、請求項１２に記載の装置。
  14. 前記装置が、前記反応チャンバーの温度を前記加工温度に制御するように構成および配置される第一の加熱システムを備える、請求項１２に記載の装置。
  15. 前記バッファタンク温度が、前記加工温度より０～５０℃高い、請求項１２に記載の装置。
  16. 前記加工温度が２０～４５０℃であり、前記逐次制御器が、前記反応チャンバー内の圧力を０．００１～１０００Ｔｏｒｒに維持するように構成および配置される、請求項１２に記載の装置。
  17. 逐次浸透合成装置であって、
    少なくとも一つの基材を保持するための基材ホルダーを備えた反応チャンバーと、
    気体状の第一または第二の前駆体を前記反応チャンバーに提供および前記反応チャンバーから除去する一つまたは複数の反応チャンバーバルブを備える、前駆体分配および除去システムと、
    前記一つまたは複数の反応チャンバーバルブに動作可能に接続され、前記反応チャンバー内の基材上に提供された浸透材料の前記気体状の第一および第二の前駆体との逐次浸透を可能にするようにプログラムされる逐次制御器と、
    前記前駆体分配および除去システム内に提供された少なくとも一つの分配バッファタンクであって、前記分配バッファタンクは、前記分配バッファタンクの温度を加工温度よりも高いバッファタンク温度に制御するように構成および配置される第二の加熱システムを備える、分配バッファタンクと、
    前記前駆体分配および除去システム内で下流側の反応チャンバーバルブとガス除去ポンプとの間に配置された除去バッファタンクであって、前記除去バッファタンクの容積は、前記反応チャンバーの容積よりも大きく、前記除去バッファタンクおよび前記ガス除去ポンプは、前記下流側の反応チャンバーバルブを開くと、前記除去バッファタンクが前記反応チャンバー内から一つまたは複数の気体を吸引するように構成および配置される、除去バッファタンクと、を備え、
    少なくとも一つの前記分配バッファタンクが、前記分配バッファタンク内に異なる容積を収容する可撓性ベローズを備える、装置。
  18. 前記分配バッファタンクが、前記反応チャンバーの上部またはその近くに提供される、請求項１２に記載の装置。
  19. 前記除去バッファタンクが、前記反応チャンバーの一つが開かれた時、前記分配バッファタンク内のガスを収容するために、前記反応チャンバーの容積の１～２０倍の容積を有する、請求項１２に記載の装置。
  20. 逐次浸透合成装置であって、
    少なくとも一つの基材を保持するための基材ホルダーを備えた反応チャンバーと、
    気体状の第一または第二の前駆体を前記反応チャンバーに提供および前記反応チャンバーから除去する一つまたは複数の反応チャンバーバルブを備える、前駆体分配および除去システムと、
    前記一つまたは複数の反応チャンバーバルブに動作可能に接続され、前記反応チャンバー内の基材上に提供された浸透材料の前記気体状の第一および第二の前駆体との逐次浸透を可能にするようにプログラムされる逐次制御器と、
    前記前駆体分配および除去システム内に提供された少なくとも一つの分配バッファタンクであって、前記分配バッファタンクは、前記分配バッファタンクの温度を加工温度よりも高いバッファタンク温度に制御するように構成および配置される第二の加熱システムを備える、分配バッファタンクと、
    前記前駆体分配および除去システム内で下流側の反応チャンバーバルブとガス除去ポンプとの間に配置された除去バッファタンクであって、前記除去バッファタンクの容積は、前記反応チャンバーの容積よりも大きく、前記除去バッファタンクおよび前記ガス除去ポンプは、前記下流側の反応チャンバーバルブを開くと、前記除去バッファタンクが前記反応チャンバー内から一つまたは複数の気体を吸引するように構成および配置される、除去バッファタンクと、
    ０．５～２０の前記第一の前駆体のパルスを有する不連続な第一の前駆体流を提供するためのバブラーであって、第一の期間Ｔ１の間、０．１～５秒間、不活性ガスのパルスと交互となる、バブラーと、を備える、装置。
  21. 前記反応チャンバーが、前記反応チャンバーの上部に設けられ、前記前駆体分配および除去システムと接続して、前記第一または第二の前駆体を前記基材の表面に提供する、シャワーヘッドを備える、請求項１２に記載の装置。
  22. 前記前駆体分配および除去システムが、前記シャワーヘッドと接続可能なパージシステムを備え、前記反応チャンバーをパージする、請求項２１に記載の装置。
  23. 逐次浸透合成装置であって、
    少なくとも二つの基材を保持するための基材ホルダーを備えた反応チャンバーと、
    気体状の第一または第二の前駆体を前記反応チャンバーに提供および前記反応チャンバーから除去する一つまたは複数の上流側および下流側の反応チャンバーバルブを備える、前駆体分配および除去システムと、
    前記一つまたは複数の反応チャンバーバルブに動作可能に接続され、前記反応チャンバー内の前記二つの基材上に提供された浸透材料の前記気体状の第一および第二の前駆体との逐次浸透を可能とするようにプログラムされた逐次制御器と、を備える逐次浸透装置であって、
    それぞれ単一の基材を収容するように構成および配置される少なくとも二つの反応チャンバーを備え、
    それぞれの反応チャンバーは、前記前駆体分配および除去システムにおける共通の上流側の反応チャンバーバルブに接続され、上流側の分配バッファタンクから少なくとも二つの反応空間に前記第一または第二の前駆体を同時に供給し、
    それぞれの反応チャンバーは、前記前駆体分配および除去システムにおける共通の下流側の反応チャンバーバルブに接続され、少なくとも二つの前記反応空間から、前記反応チャンバーの容積よりも大きな容積を有する下流側の除去バッファタンクに、前記第一または第二の前駆体を同時に除去し、前記下流側の除去バッファタンクおよびガス除去ポンプは、前記共通の下流側の反応チャンバーバルブを開くと、前記下流側の除去バッファタンクが前記反応チャンバー内から一つまたは複数の気体を吸引するように構成および配置される、装置。
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