WO2007114156A1 - 原子層成長装置 - Google Patents
原子層成長装置 Download PDFInfo
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- WO2007114156A1 WO2007114156A1 PCT/JP2007/056622 JP2007056622W WO2007114156A1 WO 2007114156 A1 WO2007114156 A1 WO 2007114156A1 JP 2007056622 W JP2007056622 W JP 2007056622W WO 2007114156 A1 WO2007114156 A1 WO 2007114156A1
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- WIPO (PCT)
- Prior art keywords
- raw material
- valve
- supply
- material gas
- atomic layer
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
Definitions
- the present invention relates to an atomic layer deposition apparatus capable of forming a thin film in atomic layer and molecular layer units.
- the present invention relates to an atomic layer deposition apparatus capable of supplying a source gas under stable pressure and the like.
- the atomic layer growth method is a technology for forming a thin film in atomic layer units by alternately supplying the substrate with the raw materials of the respective elements constituting the film to be formed.
- the atomic layer growth method only one layer or n layer is adsorbed on the surface while the raw material of each element is supplied, and the excess raw material is prevented from contributing to the growth. This is called the self-stopping action of growth.
- the atomic layer deposition method can form high quality films because it does not use plasma.
- the atomic layer growth method has a feature that the application range is wide, for example, the insulating film can be formed even on a glass substrate which does not need to increase the processing temperature to about 300 ° C., for example.
- An atomic layer deposition apparatus for realizing an atomic layer deposition method having such features is, as shown in FIG. 3, a film forming chamber 301 in which film growth is performed in the vapor phase, and film formation
- a substrate table 302 provided with a heating mechanism disposed inside the chamber 301 and an exhaust mechanism 304 are provided.
- the atomic layer deposition apparatus also includes a raw material supply mechanism 305 including a raw material vaporizer 351 and a nozzle tank 352, and a purge gas supply unit 307.
- the substrate 303 to be processed is carried onto the substrate table 302 and the film formation chamber 301 is sealed, the substrate 303 is placed by the heating mechanism of the substrate table 302.
- the heating mechanism of the substrate table 302. By repeating supply of a predetermined gas by the raw material supply mechanism 305, exhaust by the exhaust mechanism 304, purge by supply of purge gas by the purge gas supply unit 307, and exhaust by the exhaust mechanism 304 while heating to a constant temperature, The desired thin film has been formed. Ru.
- the raw material (organic metal material) used in the formation of the insulating film by the atomic layer deposition apparatus is a liquid at about 20 ° C. and atmospheric pressure.
- the raw material supply mechanism 305 the raw material of the liquid is vaporized by the raw material vaporizer 351, and the vaporized raw material is supplied to the inside of the film forming chamber 301.
- the raw material gas is supplied to the film forming chamber 301 with the pressure fluctuation and the like suppressed by using the nozzle tank 352.
- the supply valve 354 to the film forming chamber 301 is opened while the filling valve 353 to the nozzle tank 352 is closed. By performing control in this manner, it is possible to suppress pressure fluctuations due to the direct flow of the source gas from the source vaporizer 351.
- the supply capacity of the raw material gas can not be fully utilized because the raw material vaporizer 351 can not make full use of the raw material gas supply capacity.
- the raw material gas force S buffer tank 352 generated by the raw material vaporizer 351 is filled with the supply valve 354 closed and the filling valve 353 opened.
- the supply valve 354 is opened, and the raw material gas is supplied from the nozzle tank 352. Therefore, the source gas can not be supplied to the film forming chamber 301 while the nozzle tank 352 is filled with the source gas.
- the film forming chamber 301 is formed. This enables stable supply of source gas at the necessary stage.
- the present invention has been made to solve the above problems, and it is possible to more stably supply the source gas even if the source gas supply process in atomic layer growth is shortened.
- the purpose is
- An atomic layer deposition apparatus includes a deposition chamber and an interior chamber having a sealable inner space.
- a raw material vaporization means for producing a raw material gas by gasifying the raw material, a plurality of buffer tanks filled with the raw material gas produced by the raw material vaporization means, and the raw material produced in the raw material vaporization means At least a filling valve controlling gas filling, a supply valve controlling supply of the raw material gas from each buffer tank, and a control means controlling opening and closing of each filling valve and each supply valve;
- the control means opens the supply valve of at least one buffer tank to supply the raw material gas to the film forming chamber, opens the supply valve, and opens the filling valve of the other buffer tank. It is controlled to carry out the filling of the source gas.
- control means opens the filling valve and closes the supply valve of the buffer tank filled with the raw material gas, and the raw material gas is filled above the lower limit specified value. Open the supply valve and control so that the source gas is supplied to the deposition chamber.
- the atomic layer deposition apparatus further includes an introduction control valve for controlling introduction of the raw material gas supplied to the respective buffer tanks into the film forming chamber, and the control means includes an introduction control valve.
- Open the supply valve of at least one buffer tank and supply the source gas while opening the supply valve, and open the filling valve of another buffer tank to fill the source gas Control may be performed.
- the control means opens the filling valve and fills the raw material gas, the supply valve of the buffer tank is closed, and the feeding valve of the buffer tank filled with the raw material gas exceeding the lower limit specified value is opened.
- Introduced Control should be done to open the control valve.
- the source gas is supplied to the deposition chamber 1 where the source gas vaporization means and the deposition chamber 1 are not in communication with each other. Gas pressure always exceeds the lower limit specified value.
- the filling valve is opened using a plurality of buffer tanks, for example, the supply valve of the buffer tank filled with the source gas is closed, and the source gas is at the lower limit specified value.
- the feed valve of at least one buffer tank is opened to open the feed control valve such as opening the feed control valve while the feed valve of the filled buffer tank is opened, and the source gas is supplied to the deposition chamber. Since the supply valve is opened and the filling valve of the other buffer tank is opened to perform the filling of the raw material gas, the raw material gas supply process in atomic layer growth is shortened but the raw material is more stable. The excellent effect of being able to supply gas is obtained.
- FIG. 1 is a block diagram showing a configuration example of an atomic layer deposition apparatus according to an embodiment of the present invention.
- FIG. 2 is a timing chart showing an example of control of each valve by the control unit 156 shown in FIG.
- FIG. 3 is a block diagram showing a configuration example of a conventional atomic layer deposition apparatus.
- FIG. 4 is a timing chart showing another control example of each valve by the control unit 156 shown in FIG.
- FIG. 1 is a block diagram showing an example of the configuration of an atomic layer deposition apparatus according to an embodiment of the present invention.
- the atomic layer growth apparatus of the present embodiment shown in FIG. 1 first comprises a film forming chamber 101 in which film growth is performed in the vapor phase, and a substrate provided with a heating mechanism disposed inside the film forming chamber 101.
- a table 102 and an exhaust mechanism 104 are provided.
- the film forming chamber 101 is provided with a sealable internal space, and the substrate table 101 is provided in the internal space.
- this atomic layer growth system is composed of two raw material vaporizers 151 and two Buffer tank A152a and buffer tank B152b, filling valve A152a of buffer tank A152a and supply valve A154a, filling valve B153b and supply valve B154b of buffer tank B152b, introduction control valve 155, and control unit for controlling opening and closing of each valve
- a raw material supply unit 105 composed of Further, the atomic layer deposition apparatus of the present embodiment is provided with a purge gas supply unit 107 for supplying a purge gas composed of an inert gas such as argon or nitrogen to the film formation chamber 101.
- the raw material vaporizer 151 accommodates, for example, an organic metal material such as aminosilane, and is vaporized by heating the stored organic metal material to generate a raw material gas.
- the source gas generated in this manner is first filled into the buffer tank A 152 a and the buffer tank B 152 b. Thereafter, the source gas filled in the nozzle tank A 152 a and the source gas force filled in the buffer tank B 152 b are alternately supplied to the film forming chamber 101.
- the control of the filling to the buffer tank and the supply from the buffer tank is performed by opening / closing control of the filling valve A153a, the supply valve A154a, the filling valve B153b, the supply valve B154b, and the introduction control valve 155 by the control unit 156. It will be.
- the stock tank A 152 a is filled with the source gas.
- the control unit 156 closes all of the filling valve A 153 a, the supply valve A 154 a, the filling valve B 153 b, the supply valve B 154 b, and the introduction control valve 155.
- the control unit 156 opens the supply valve A 154 a and opens the introduction control valve 155 to form a film from the buffer tank Al 52 a.
- the source gas is supplied to the chamber 101.
- the control unit 156 opens the filling valve B 153 b so that the raw material gas is filled in the buffer tank B 152 b.
- the control unit 156 closes the introduction control valve 155.
- the control unit 156 opens the introduction control valve 155.
- the control unit 156 closes the filling valve B153b.
- the control unit 156 closes the supply valve A154a and opens the filling valve A153a, and the supply valve B154b. Open.
- the source gas is supplied to the torque film forming chamber 101 of the nozzle tank B 152 b.
- the control unit 156 closes the introduction control valve 155.
- the control unit 156 opens the introduction control valve 155.
- the control unit 156 closes the filling valve A 153a.
- the control unit 156 closes the introduction control valve 155.
- the pressure of the raw material gas in the nozzle tank B152b falls below the lower limit specified value, so the control unit 156 closes the supply valve B154b, opens the filling valve B153b, and the supply valve A154a. Open.
- the control unit 156 opens the introduction control valve 155.
- the control unit 156 closes the introduction control valve 155.
- the control unit 156 opens the introduction control valve 155.
- the pressure of the raw material gas in the knocker tank A152a falls below the lower limit specified value, so the control unit 156 closes the supply valve A154a and opens the filling valve A153a. , Open the supply valve B154b.
- the source gas is supplied from the buffer tank B 152 b to the film forming chamber 101.
- the control unit 156 closes the introduction control valve 155.
- the control unit 156 opens the introduction control valve 155.
- the buffer tank A152a is filled.
- the control unit 156 closes the filling valve A 153 a.
- the control unit 156 closes the introduction control valve 155 when the source gas supply process ends and the purge process starts at time t1. Also, at this time ti l, since the pressure of the raw material gas at the knock tank B 152 b is lower than the lower limit specified value, the control unit 156 closes the supply valve B 154 b and opens the filling valve B 153 b. Open A154a. Next, at time tl2 at which the purge process ends and the next raw material supply process starts, the control unit 156 opens the introduction control valve 155. As a result, the source gas is supplied from the buffer tank A 152 a to the film forming chamber 101. The pressure of the raw material gas described above may be measured by a pressure gauge P provided in each buffer tank.
- the substrate 103 to be processed is carried onto the substrate table 102, and after the film forming chamber 101 is sealed, the heating mechanism of the substrate table 102 With the plate 103 heated to a predetermined temperature, a desired thin film was formed by repeating the above-described source gas supply process and the purge process of the purge gas supply unit 107 and the purge gas supply and exhaust mechanism 104 exhausting process. It will be in the state.
- the supply valve of one of the buffer tanks is opened to supply the source gas to the deposition chamber 1 as a whole.
- the supply valve was opened and the filling valve of the other buffer tank was opened to perform the filling of the raw material gas.
- the introductory control valve was opened in the open state. The control of the opening and closing of each of these valves is performed by the control of a control unit (control means).
- the filling of the raw material gas is stopped while the raw material gas is being supplied, so in the case of the example shown in FIG. During the process, the generation capacity of the raw material vaporizer 151 is wasted.
- the time during which the filling of the raw material gas is stopped becomes shorter than the raw material supply process, The waste of the raw material gas generation capacity in the vessel 151 is suppressed.
- the pressure of the raw material gas in any of the buffer tanks is lower than the lower limit specified value even in the stage where the raw material supply process is not performed (in a state where the introduction control valve 155 is closed).
- the supply valve of the other buffer tank is opened, and the source gas is supplied to the introduction control valve 155.
- the force supply valve A 154a is closed to close the introduction control valve 155.
- the present invention is not limited to this.
- the introduction control valve 155 may be opened and the supply valve A1 54a may be opened at the stage of time t6.
- the supply valve force is also controlled as shown in FIG. 2 in consideration of the delay of the supply of the source gas due to the presence of the piping volume up to the introduction control valve 155, the pressure fluctuation in the source gas supply can be further suppressed. Become.
- the supply valve of this buffer tank is At the same time as closing the filling valve and opening the filling valve, the other buffer tank supply valves are opened.
- the pressure in the nozzle tank 152a falls below the lower limit predetermined value, so the supply valve A154a is closed and the filling valve A 153a is opened and at the same time the supply valve B. Open 154b.
- the feed control valve A154a is opened at the same time as the introduction control valve 155 is opened. Subsequently, the introduction control valve 155 is then opened. At the same time as closing the supply valve A154a at time t2, the supply valve B154b is opened. Subsequently, at time t4 at which the introduction control valve 155 is opened next, the supply valve B 154b is closed and simultaneously the supply valve Al 54a is opened. Control is performed to repeat these operations.
- the filling valve A153a and the filling valve B153b are controlled to open when the corresponding supply valve A154a and the supply valve B154b are closed, and to close when the pressure of the stopper tank reaches the upper limit specified value.
- the source gas may be supplied to the film forming chamber 1 by controlling the supply valve provided in each buffer tank without using the introduction control valve.
- control of each valve may be performed.
- the introduction control valve 155 is in an open state at all stages (time points).
- the nozzle tank A 152 a is filled with the source gas.
- the control unit 156 closes the filling valve A 153 a, the supply valve A 154 a, the filling valve B 153 b, and the supply valve B 154 b.
- the control unit 156 opens the supply valve A154a, and the raw material gas is supplied from the nozzle tank A152a to the film forming chamber 101. It will be in the state of being supplied.
- the control unit 156 closes the supply valve Al 54a so that the supply of the raw material gas is stopped, and the filling is completed. Open the valve A153a, and fill the buffer tank A152a with the source gas.
- the control unit 156 opens the supply valve B153b to supply the raw material gas to the film forming chamber 101 of the nozzle tank B152b.
- the control unit 156 closes the filling valve A 153a.
- the control unit 156 closes the supply valve B 153 b so that the supply of the raw material gas is stopped, and the filling valve B153b is opened, and the buffer tank B152b is filled with the source gas.
- the control unit 156 opens the supply valve A153a and transfers the buffer tank A152a to the film forming chamber 101. The source gas is supplied.
- the control unit 156 closes the filling valve B153b.
- the control unit 156 closes the supply valve Al 53a so that the supply of the raw material gas is stopped, and the filling is completed. Open the valve A153a, and fill the buffer tank A152a with the source gas.
- the control unit 156 opens the supply valve B153b to supply the raw material gas to the film forming chamber 101 of the torque tank B152b.
- the control unit 156 closes the filling valve A 153a.
- the control unit 156 closes the supply valve B 153 b so that the supply of the raw material gas is stopped, and the filling valve B153b is opened, and the buffer tank B152b is filled with the source gas. After that, as described above, it repeats as time t8, time t8,, time t9, time tlO, time tlO, time til, time tl2, time tl2 ' ⁇ ⁇ ⁇ ⁇ .
- the pressure of the raw material gas described above may be measured by a pressure gauge P provided in each buffer tank.
- the pressure value of the raw material gas filled in the buffer tank exceeds the lower limit specified value. It is confirmed that the supply valve of this nozzle tank is opened to supply the source gas to the film forming chamber without being limited to this.
- the flow rate of the supplied source gas may be measured by the flow meter F, and the flow rate measurement result may be used to control the opening and closing of the supply valve of the buffer tank, for example, by measuring the flow rate above a predetermined value.
- the force used to use two buffer tanks is not limited to this. Three or more buffer tanks may be used. Even when three or more buffer tanks are used, first, in each of the buffer tanks used, a filling valve for controlling the filling of the raw material gas generated by the raw material vaporizer (the raw material vaporization means), and the supply of the raw material gas from the buffer tank And a supply valve for controlling the The feed valve of the buffer tank filled with the raw material gas is closed by opening the filling valve, and the feed control valve of the buffer tank filled with the raw material gas above the lower limit is opened. If you control to open it ,. In this way, even if each cycle is performed at a shorter interval, it is possible to obtain a state in which the raw material is always supplied from any of the nozzle tanks in the raw material supply process.
- the atomic layer deposition apparatus of this example shown in FIG. 1 is also applicable to atomic layer deposition in which a metal oxide film is formed using an oxidizing gas such as oxygen or ozone in addition to a raw material gas made of an organic metal material. It is applicable. For example, if metal organic material gas supply process ⁇ purge process ⁇ oxidizing gas supply process ⁇ purge process ⁇ ⁇ is repeated, it is possible to form a metal oxide film, and even in this case, a plurality of buffer tanks may be formed. By supplying each gas by using, even if the gas supply process is shortened, the source gas can be supplied more stably.
- an oxidizing gas such as oxygen or ozone
- the present invention is suitably used for crystal growth of thin films of semiconductors and compound semiconductors, and formation of oxide films and the like.
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2008508558A JP4866898B2 (ja) | 2006-03-30 | 2007-03-28 | 原子層成長装置 |
EP07740060A EP2006414A2 (en) | 2006-03-30 | 2007-03-28 | Atomic layer growing apparatus |
KR1020087023363A KR101161020B1 (ko) | 2006-03-30 | 2007-03-28 | 원자층 성장 장치 |
US12/295,194 US8202367B2 (en) | 2006-03-30 | 2007-03-28 | Atomic layer growing apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006094466 | 2006-03-30 | ||
JP2006-094466 | 2006-03-30 |
Publications (1)
Publication Number | Publication Date |
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WO2007114156A1 true WO2007114156A1 (ja) | 2007-10-11 |
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ID=38563425
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Application Number | Title | Priority Date | Filing Date |
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PCT/JP2007/056622 WO2007114156A1 (ja) | 2006-03-30 | 2007-03-28 | 原子層成長装置 |
Country Status (6)
Country | Link |
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US (1) | US8202367B2 (ja) |
EP (1) | EP2006414A2 (ja) |
JP (1) | JP4866898B2 (ja) |
KR (1) | KR101161020B1 (ja) |
TW (1) | TW200741827A (ja) |
WO (1) | WO2007114156A1 (ja) |
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WO2009113400A1 (ja) * | 2008-03-12 | 2009-09-17 | 三井造船株式会社 | 原料供給装置 |
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JP7107648B2 (ja) | 2017-07-11 | 2022-07-27 | 株式会社堀場エステック | 流体制御装置、流体制御システム、流体制御方法、及び、流体制御装置用プログラム |
WO2024062577A1 (ja) * | 2022-09-21 | 2024-03-28 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
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US8202367B2 (en) * | 2006-03-30 | 2012-06-19 | Mitsui Engineering & Shipbuilding Co., Ltd. | Atomic layer growing apparatus |
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JP2008190037A (ja) * | 2007-02-01 | 2008-08-21 | Tera Semicon Corp | ソースガス供給装置 |
WO2009113400A1 (ja) * | 2008-03-12 | 2009-09-17 | 三井造船株式会社 | 原料供給装置 |
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JP2010190340A (ja) * | 2009-02-19 | 2010-09-02 | Chugoku Electric Power Co Inc:The | 燃料電池発電設備 |
JP2013189662A (ja) * | 2012-03-12 | 2013-09-26 | Mitsui Eng & Shipbuild Co Ltd | 薄膜形成装置 |
JP2015073020A (ja) * | 2013-10-03 | 2015-04-16 | 三井造船株式会社 | 原子層堆積装置および原子層堆積方法 |
JP2020502361A (ja) * | 2016-12-15 | 2020-01-23 | アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ | 逐次浸透合成装置 |
JP7184773B2 (ja) | 2016-12-15 | 2022-12-06 | アーエスエム・イーぺー・ホールディング・ベスローテン・フェンノートシャップ | 逐次浸透合成装置 |
JP7107648B2 (ja) | 2017-07-11 | 2022-07-27 | 株式会社堀場エステック | 流体制御装置、流体制御システム、流体制御方法、及び、流体制御装置用プログラム |
JP2020105591A (ja) * | 2018-12-27 | 2020-07-09 | 東京エレクトロン株式会社 | RuSi膜の形成方法及び成膜装置 |
JP7246184B2 (ja) | 2018-12-27 | 2023-03-27 | 東京エレクトロン株式会社 | RuSi膜の形成方法 |
JP2022052622A (ja) * | 2020-09-23 | 2022-04-04 | 株式会社Kokusai Electric | 基板処理装置及び半導体装置の製造方法 |
JP7203070B2 (ja) | 2020-09-23 | 2023-01-12 | 株式会社Kokusai Electric | 基板処理装置、基板処理方法及び半導体装置の製造方法 |
WO2024062577A1 (ja) * | 2022-09-21 | 2024-03-28 | 株式会社Kokusai Electric | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム |
WO2024062569A1 (ja) * | 2022-09-21 | 2024-03-28 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
Also Published As
Publication number | Publication date |
---|---|
JP4866898B2 (ja) | 2012-02-01 |
KR20080106294A (ko) | 2008-12-04 |
US20090266296A1 (en) | 2009-10-29 |
US8202367B2 (en) | 2012-06-19 |
EP2006414A9 (en) | 2009-07-22 |
JPWO2007114156A1 (ja) | 2009-08-13 |
TWI371785B (ja) | 2012-09-01 |
EP2006414A2 (en) | 2008-12-24 |
TW200741827A (en) | 2007-11-01 |
KR101161020B1 (ko) | 2012-07-02 |
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