JP7296806B2 - RuSi膜の形成方法及び基板処理システム - Google Patents
RuSi膜の形成方法及び基板処理システム Download PDFInfo
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- JP7296806B2 JP7296806B2 JP2019131423A JP2019131423A JP7296806B2 JP 7296806 B2 JP7296806 B2 JP 7296806B2 JP 2019131423 A JP2019131423 A JP 2019131423A JP 2019131423 A JP2019131423 A JP 2019131423A JP 7296806 B2 JP7296806 B2 JP 7296806B2
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- 238000012545 processing Methods 0.000 title claims description 197
- 239000000758 substrate Substances 0.000 title claims description 69
- 238000000034 method Methods 0.000 title claims description 66
- 229910019895 RuSi Inorganic materials 0.000 title claims 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 108
- 229910052710 silicon Inorganic materials 0.000 claims description 108
- 239000010703 silicon Substances 0.000 claims description 108
- 238000012546 transfer Methods 0.000 claims description 54
- 239000002243 precursor Substances 0.000 claims description 43
- 230000007246 mechanism Effects 0.000 claims description 39
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 208
- 235000012431 wafers Nutrition 0.000 description 63
- 230000008569 process Effects 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000003028 elevating effect Effects 0.000 description 10
- 238000010926 purge Methods 0.000 description 9
- 239000012159 carrier gas Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000007723 transport mechanism Effects 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000011534 incubation Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- SDJHPPZKZZWAKF-UHFFFAOYSA-N DMBD Natural products CC(=C)C(C)=C SDJHPPZKZZWAKF-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 2
- 238000004876 x-ray fluorescence Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- VMDTXBZDEOAFQF-UHFFFAOYSA-N formaldehyde;ruthenium Chemical compound [Ru].O=C VMDTXBZDEOAFQF-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052990 silicon hydride Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description
半導体デバイスの微細化に伴い、配線の微細化も進んでいる。そこで、配線材料として、ルテニウムシリサイド(RuSi)膜が検討されている。RuSi膜は、銅(Cu)膜と異なり絶縁膜へ拡散しにくいため、RuSi膜の下地膜にはバリア性は要求されない。しかし、絶縁膜上に直接、密着性よくRuSi膜を形成することが要求される。
一実施形態のRuSi膜の形成方法について説明する。図1は、一実施形態のRuSi膜の形成方法を示すフローチャートである。図2は、一実施形態のRuSi膜の形成方法を示す工程断面図である。
一実施形態のRuSi膜の形成方法を実現する基板処理システムの一例について説明する。図3は、基板処理システムの構成例を示す概略図である。
前述の基板処理システムが備える処理装置101の構成例について説明する。図4は、基板処理システムが備える処理装置の一例を示す概略図である。図4に示される処理装置101は、例えば基板をシリコン含有ガスに曝露する工程S11及びRu膜をシリコン含有ガスに曝露する工程S13を実行する装置である。
ウエハWの温度:300~600℃
処理容器1内の圧力:1.33~1333Pa
(工程S13)
ウエハWの温度:300~600℃
処理容器1内の圧力:1.33~1333Pa
また、上記の例では、処理容器1内に複数のガス供給ライン51b,55bから交互にSiH4ガスを供給する場合を説明したが、本開示はこれに限定されない。例えば、処理容器1内に複数のガス供給ライン51b,55bから同時にSiH4ガスを供給してもよい。
ウエハWの温度:130~200℃
本体容器501内の圧力:0.133~133Pa
基板処理システムの動作の一例について説明する。
一実施形態のRuSi膜の形成方法により奏される効果を確認するために行った実施例について説明する。
200 真空搬送室
201 搬送機構
700 全体制御部
F1 基板
F2 絶縁膜
F3 シリコン
F4 Ru膜
F5 RuSi膜
T 凹部
W ウエハ
Claims (15)
- 絶縁膜を含む凹部を有する基板を準備する工程と、
前記絶縁膜の表面が露出した状態で前記基板にシリコン含有ガスを供給して前記絶縁膜上にシリコンを吸着させる工程と、
前記絶縁膜上に前記シリコンが吸着した前記基板にRu含有前駆体を供給して前記凹部にRu膜を形成する工程と、
前記凹部に前記Ru膜が形成された前記基板にシリコン含有ガスを供給してRuSi膜を形成する工程と、
を有する、RuSi膜の形成方法。 - 前記RuSi膜を形成する工程は、前記基板を加熱した状態で行われる、
請求項1に記載のRuSi膜の形成方法。 - 前記シリコンを吸着させる工程と前記RuSi膜を形成する工程とは、同じ温度で行われる、
請求項1又は2に記載のRuSi膜の形成方法。 - 前記シリコンを吸着させる工程及び前記RuSi膜を形成する工程と、前記Ru膜を形成する工程とは、異なる温度で行われる、
請求項1乃至3のいずれか一項に記載のRuSi膜の形成方法。 - 前記シリコンを吸着させる工程及び前記RuSi膜を形成する工程は、300~500℃の温度で行われる、
請求項1乃至4のいずれか一項に記載のRuSi膜の形成方法。 - 前記Ru膜を形成する工程は、150~200℃の温度で行われる、
請求項1乃至5のいずれか一項に記載のRuSi膜の形成方法。 - 前記Ru膜を形成する工程と前記RuSi膜を形成する工程とは、交互に繰り返し行われる、
請求項1乃至6のいずれか一項に記載のRuSi膜の形成方法。 - 前記シリコンを吸着させる工程と前記Ru膜を形成する工程とは、真空搬送室を介して接続された別の処理容器内で行われる、
請求項1乃至7のいずれか一項に記載のRuSi膜の形成方法。 - 前記シリコンを吸着させる工程と前記Ru膜を形成する工程とは、同一の処理容器内で行われる、
請求項1乃至7のいずれか一項に記載のRuSi膜の形成方法。 - 前記シリコンを吸着させる工程と前記RuSi膜を形成する工程とは、同一の処理容器内で行われる、
請求項1乃至9のいずれか一項に記載のRuSi膜の形成方法。 - 前記シリコンを吸着させる工程と前記RuSi膜を形成する工程とは、別の処理容器内で行われる、
請求項1乃至9のいずれか一項に記載のRuSi膜の形成方法。 - 前記シリコン含有ガスは、SiH4ガスであり、
前記Ru含有前駆体は、Ru3(CO)12である、
請求項1乃至11のいずれか一項に記載のRuSi膜の形成方法。 - 前記シリコンを吸着させる工程及び前記RuSi膜を形成する工程では、複数のガス供給ラインから同時にシリコン含有ガスが供給される、
請求項1乃至12のいずれか一項に記載のRuSi膜の形成方法。 - 前記シリコンを吸着させる工程及び前記RuSi膜を形成する工程では、複数のガス供給ラインから交互にシリコン含有ガスが供給される、
請求項1乃至12のいずれか一項に記載のRuSi膜の形成方法。 - 減圧状態で基板を搬送可能な搬送機構を内部に有する真空搬送室と、
前記真空搬送室に接続された第1の処理装置と、
前記真空搬送室に接続された第2の処理装置と、
制御部と、
を備え、
前記制御部は、
絶縁膜を含む凹部を有する基板を準備する工程と、
準備した前記基板を前記第1の処理装置に搬送し、前記第1の処理装置において減圧状態で、前記絶縁膜の表面が露出した状態で前記基板にシリコン含有ガスを供給して前記絶縁膜上にシリコンを吸着させる工程と、
前記絶縁膜上に前記シリコンが吸着した前記基板を前記第1の処理装置から前記真空搬送室を介して前記第2の処理装置に搬送し、前記第2の処理装置において減圧状態で前記基板にRu含有前駆体を供給して前記凹部にRu膜を形成する工程と、
前記凹部に前記Ru膜が形成された前記基板を前記第2の処理装置から前記真空搬送室を介して前記第1の処理装置に搬送し、前記第1の処理装置において減圧状態で前記基板にシリコン含有ガスを供給してRuSi膜を形成する工程と、
を実行するように、前記真空搬送室、前記第1の処理装置及び前記第2の処理装置を制御する、
基板処理システム。
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