JP2015134966A - インサイチュチャンバ処理および堆積プロセス - Google Patents
インサイチュチャンバ処理および堆積プロセス Download PDFInfo
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- JP2015134966A JP2015134966A JP2015026462A JP2015026462A JP2015134966A JP 2015134966 A JP2015134966 A JP 2015134966A JP 2015026462 A JP2015026462 A JP 2015026462A JP 2015026462 A JP2015026462 A JP 2015026462A JP 2015134966 A JP2015134966 A JP 2015134966A
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- gas
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- tantalum
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- 238000005137 deposition process Methods 0.000 title abstract description 19
- 238000011065 in-situ storage Methods 0.000 title description 4
- 239000002243 precursor Substances 0.000 claims abstract description 247
- 239000000758 substrate Substances 0.000 claims abstract description 210
- 238000000034 method Methods 0.000 claims abstract description 197
- 238000012545 processing Methods 0.000 claims abstract description 172
- -1 alkylamine compound Chemical class 0.000 claims abstract description 89
- 239000000463 material Substances 0.000 claims abstract description 87
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 66
- 238000000151 deposition Methods 0.000 claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- 125000003282 alkyl amino group Chemical group 0.000 claims abstract description 33
- 239000007789 gas Substances 0.000 claims description 507
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 147
- 229910052715 tantalum Inorganic materials 0.000 claims description 114
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 107
- 239000003446 ligand Substances 0.000 claims description 105
- 229910052757 nitrogen Inorganic materials 0.000 claims description 79
- 150000001875 compounds Chemical class 0.000 claims description 77
- 239000012159 carrier gas Substances 0.000 claims description 57
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims description 50
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 45
- VSLPMIMVDUOYFW-UHFFFAOYSA-N dimethylazanide;tantalum(5+) Chemical group [Ta+5].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C VSLPMIMVDUOYFW-UHFFFAOYSA-N 0.000 claims description 40
- 125000000168 pyrrolyl group Chemical group 0.000 claims description 32
- 229910052707 ruthenium Inorganic materials 0.000 claims description 29
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 28
- 239000000126 substance Substances 0.000 claims description 26
- 229910052739 hydrogen Inorganic materials 0.000 claims description 24
- 239000001257 hydrogen Substances 0.000 claims description 23
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 22
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 claims description 22
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 22
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 21
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 21
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 21
- 238000005019 vapor deposition process Methods 0.000 claims description 21
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- 125000000217 alkyl group Chemical group 0.000 claims description 17
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 17
- 229910052721 tungsten Inorganic materials 0.000 claims description 16
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 15
- 125000003545 alkoxy group Chemical group 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
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- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 10
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 claims description 10
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- 125000005277 alkyl imino group Chemical group 0.000 claims description 9
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- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 claims description 8
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 claims description 8
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 claims description 8
- 125000003118 aryl group Chemical group 0.000 claims description 7
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 5
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- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 claims description 4
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
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- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 28
- 238000010926 purge Methods 0.000 description 91
- 238000009826 distribution Methods 0.000 description 70
- 239000000376 reactant Substances 0.000 description 60
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- 239000010410 layer Substances 0.000 description 37
- 238000006243 chemical reaction Methods 0.000 description 30
- 229910021529 ammonia Inorganic materials 0.000 description 29
- 229910017052 cobalt Inorganic materials 0.000 description 28
- 239000010941 cobalt Substances 0.000 description 28
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 25
- 229910052786 argon Inorganic materials 0.000 description 23
- 239000012707 chemical precursor Substances 0.000 description 23
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 20
- 238000005229 chemical vapour deposition Methods 0.000 description 16
- 239000010936 titanium Substances 0.000 description 16
- 210000002381 plasma Anatomy 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 239000002356 single layer Substances 0.000 description 11
- 239000003708 ampul Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 238000000429 assembly Methods 0.000 description 9
- 230000000712 assembly Effects 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- KLBIWNAWZPXRGM-UHFFFAOYSA-N [Ru]c1ccc[nH]1 Chemical compound [Ru]c1ccc[nH]1 KLBIWNAWZPXRGM-UHFFFAOYSA-N 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 8
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 229910007926 ZrCl Inorganic materials 0.000 description 7
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000001307 helium Substances 0.000 description 7
- 229910052734 helium Inorganic materials 0.000 description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000012686 silicon precursor Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- KIXLEMHCRGHACT-UHFFFAOYSA-N hafnium(4+);methanolate Chemical compound [Hf+4].[O-]C.[O-]C.[O-]C.[O-]C KIXLEMHCRGHACT-UHFFFAOYSA-N 0.000 description 6
- 238000005086 pumping Methods 0.000 description 6
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- 239000004912 1,5-cyclooctadiene Substances 0.000 description 5
- 229940126062 Compound A Drugs 0.000 description 5
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 5
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- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
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- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- KIJDLZOARCANNU-UHFFFAOYSA-N [Ru](c1ccc[nH]1)c1ccc[nH]1 Chemical compound [Ru](c1ccc[nH]1)c1ccc[nH]1 KIJDLZOARCANNU-UHFFFAOYSA-N 0.000 description 4
- 230000006854 communication Effects 0.000 description 4
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- 238000009792 diffusion process Methods 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 238000002203 pretreatment Methods 0.000 description 4
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 4
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- 238000007740 vapor deposition Methods 0.000 description 4
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- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- XTDAIYZKROTZLD-UHFFFAOYSA-N boranylidynetantalum Chemical compound [Ta]#B XTDAIYZKROTZLD-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
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- MTHYQSRWPDMAQO-UHFFFAOYSA-N diethylazanide;tantalum(5+) Chemical compound CCN(CC)[Ta](N(CC)CC)(N(CC)CC)(N(CC)CC)N(CC)CC MTHYQSRWPDMAQO-UHFFFAOYSA-N 0.000 description 3
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- 239000006200 vaporizer Substances 0.000 description 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
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- ZSEHKBVRLFIMPB-UHFFFAOYSA-N cobalt;cyclopenta-1,3-diene Chemical compound [Co].C=1C=C[CH-]C=1 ZSEHKBVRLFIMPB-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
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- VJDVOZLYDLHLSM-UHFFFAOYSA-N diethylazanide;titanium(4+) Chemical compound [Ti+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC VJDVOZLYDLHLSM-UHFFFAOYSA-N 0.000 description 2
- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 description 2
- LNKYFCABELSPAN-UHFFFAOYSA-N ethyl(methyl)azanide;titanium(4+) Chemical compound [Ti+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C LNKYFCABELSPAN-UHFFFAOYSA-N 0.000 description 2
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- 125000002097 pentamethylcyclopentadienyl group Chemical group 0.000 description 2
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- 229910000077 silane Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
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- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45508—Radial flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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Abstract
Description
式中、R1、R2、R3、R4、およびR5は、それぞれ独立に、存在しない、水素、アルキル基(例えば、メチル、エチル、プロピル、ブチル、アミル、またはより高級のもの)、アミン基、アルコキシ基、アルコール基、アリール基、別のピロリル基(例えば、2、2’−ビピロリル)、ピラゾール基、これらの誘導体、またはこれらの組合せである。ピロリル配位子は、R1、R2、R3、R4、およびR5の任意の2個以上が化学基によって互いに接続されていてもよい。例えば、R2およびR3は、インドリル基またはその誘導体などの環構造の一部分であってもよい。本明細書で使用されるピロリルルテニウム前駆体とは、ルテニウムと、少なくとも1種のピロリル配位子または少なくとも1種のピロリル配位子の誘導体とを含む任意の化合物のことである。いくつかの例では、ピロリルルテニウム前駆体としては、ビス(テトラメチルピロリル)ルテニウム、ビス(2,5−ジメチルピロリル)ルテニウム、ビス(2,5−ジエチルピロリル)ルテニウム、ビス(テトラエチルピロリル)ルテニウム、ペンタジエニルテトラメチルピロリルルテニウム、ペンタジエニル2,5−ジメチルピロリルルテニウム、ペンタジエニルテトラエチルピロリルルテニウム、ペンタジエニル2,5−ジエチルピロリルルテニウム、1,3−ジメチルペンタジエニルピロリルルテニウム、1,3−ジエチルペンタジエニルピロリルルテニウム、メチルシクロペンタジエニルピロリルルテニウム、エチルシクロペンタジエニルピロリルルテニウム、2−メチルピロリルピロリルルテニウム、2−エチルピロリルピロリルルテニウム、またはこれらの誘導体を挙げることができる。
図3A〜3Cは、本明細書の実施形態に記載されている、ALDプロセス用に作られたガス送達システム1130を含むプロセッシングチャンバ1100の概略図である。プロセッシングチャンバ1100は、側壁部1104および底部1106を有するチャンバボディ1102を備えている。プロセッシングチャンバ1100のスリットバルブ1108は、ロボット(図示せず)が、200mmまたは300mmの半導体ウェーハまたはガラス基板などの基板1110を、プロセッシングチャンバ1100へ送達しそこから取り出すためのアクセスを提供する。本明細書に記載された前処理プロセスおよび堆積プロセスで使用することができるプロセッシングチャンバの詳細な開示は、本発明の譲受人に譲渡された米国特許第6,916,398号および第7,204,886号、ならびに、2007年10月24日に出願され、米国特許出願公開第2008−0102208号として公開された、米国特許出願第11/923,583号に見出すことができる。これらの特許の全体を参照により本明細書に組み込む。
Claims (15)
- チャンバを処理し、基板表面上に材料を堆積させる方法であって、
前処理プロセス中に、アルキルアミン化合物を含む処理ガスに、プロセッシングチャンバの内面および前記プロセッシングチャンバ内の基板をさらすことであって、前記処理ガスは円形ガスフローとして回転して流れ、前記アルキルアミン化合物のコーティングが、前記前処理プロセス中に、前記プロセッシングチャンバ内面に形成されることと、
原子層堆積プロセス中に前記基板上に材料を堆積させながら、アルキルアミノ金属前駆体ガスおよび少なくとも第2前駆体ガスに前記基板を順次さらすことと、
を含む方法。 - 前記アルキルアミン化合物が、H2NRまたはHNR’R”の化学式を有し、式中、R、R’、およびR”が、それぞれ独立に、メチル、エチル、プロピル、ブチル、アミル、フェニル、アリール、これらの異性体、これらの誘導体、およびこれらの組合せからなる群から選択される、請求項1に記載の方法。
- 前記プロセッシングチャンバの前記内面がリッドアセンブリ内面およびチャンバボディ内面を含み、これらの内面が、前記前処理プロセス中、30℃から100℃までの範囲内の温度に加熱され、かつ5秒から60秒までの範囲内の時間、前記処理ガスにさらされる、請求項1に記載の方法。
- チャンバを処理し、基板表面上に材料を堆積させる方法であって、
前処理プロセス中に、プロセッシングチャンバの内面および前記プロセッシングチャンバ内に配置された基板を、水素化配位子化合物を含む処理ガスにさらすことであって、前記処理ガスは円形ガスフローとして回転して流れ、前記水素化配位子化合物がHLの化学式を有し、式中、Lが、アルキルアミノ、アルキルイミノ、アルコキシ、アルキル、アルケン、アルキン、シクロペンタジエニル、アルキルシクロペンタジエニル、ペンタジエニル、ピロリル、およびこれらの誘導体からなる群から選択される配位子であり、前記水素化配位子化合物のコーティングが、前記前処理プロセス中に、前記プロセッシングチャンバ内面に形成されることと、
気相堆積プロセス中に、前記基板を第1前駆体ガスにさらして前記基板上に材料を堆積させることであって、前記第1前駆体ガスが、ML’Xの化学式を有する第1前駆体を含み、式中、xが1、2、3、4、5、6、またはこれより大きく、Mが、Ti、Zr、Hf、Nb、Ta、Mo、W、Ru、Co、Ni、Pd、Pt、Cu、Al、Ga、In、Si、Ge、Sn、P、As、およびSbからなる群から選択される元素であり、L’が、それぞれ独立に、アルキルアミノ、アルキルイミノ、アルコキシ、アルキル、アルケン、アルキン、シクロペンタジエニル、アルキルシクロペンタジエニル、ペンタジエニル、ピロリル、水素、ハロゲン、これらの誘導体、およびこれらの組合せからなる群から選択される配位子であることと、
を含む方法。 - 前記水素化配位子化合物が、H2NRまたはHNR’R”の化学式を有するアルキルアミン化合物であり、式中、R、R’、およびR”は、それぞれ独立に、メチル、エチル、プロピル、ブチル、アミル、フェニル、アリール、これらの異性体、これらの誘導体、およびこれらの組合せからなる群から選択される、請求項4に記載の方法。
- 前記アルキルアミン化合物が、メチルアミン、ジメチルアミン、エチルアミン、ジエチルアミン、メチルエチルアミン、プロピルアミン、ジプロピルアミン、ブチルアミン、ジブチルアミン、これらの異性体、これらの誘導体、およびこれらの組合せからなる群から選択される、請求項5に記載の方法。
- 前記第1前駆体が、N(CH3)2、N(C2H5)2、N(C3H7)2、N(C4H9)2、N(CH3)(C2H5)、これらの異性体、これらの誘導体、およびこれらの組合せからなる群から選択されるアルキルアミノ配位子を含む、請求項4に記載の方法。
- 前記元素MがTaであり、xが4または5である、請求項7に記載の方法。
- 前記第1前駆体がペンタキス(ジメチルアミノ)タンタルであり、前記アルキルアミン化合物ガスがメチルアミンまたはジメチルアミンを含む、請求項8に記載の方法。
- 前記元素MがSi、Ti、Zr、またはHfであり、xが4である、請求項7に記載の方法。
- 前記水素化配位子化合物がROHの化学式を有するアルコール化合物であり、式中、Rがメチル、エチル、プロピル、ブチル、アミル、これらの異性体、これらの誘導体、およびこれらの組合せからなる群から選択される、請求項4に記載の方法。
- 前記アルコール化合物が、メタノール、エタノール、プロパノール、ブタノール、ペンタノール、これらの異性体、これらの誘導体、およびこれらの組合せからなる群から選択される、請求項11に記載の方法。
- 前記第1前駆体が、OCH3、OC2H5、OC3H7、OC4H9、これらの異性体、これらの誘導体、およびこれらの組合せからなる群から選択されるアルコキシ配位子を含む、請求項11に記載の方法。
- 前記水素化配位子化合物の前記配位子Lが、シクロペンタジエニル、アルキルシクロペンタジエニル、ペンタジエニル、ピロリル、これらの異性体、これらの誘導体、およびこれらの組合せからなる群から選択され、前記第1前駆体の前記配位子L’が、シクロペンタジエニル、アルキルシクロペンタジエニル、ペンタジエニル、ピロリル、これらの異性体、これらの誘導体、およびこれらの組合せからなる群から選択される、請求項4に記載の方法。
- チャンバを処理し、基板表面上に材料を堆積させる方法であって、
プロセッシングチャンバの内面および前記プロセッシングチャンバ内に配置された基板を、連続フローを有するキャリアガスにさらすことと、
前処理プロセス中に、ジメチルアミンを含む処理ガスを前記キャリアガスに導入して、前記プロセッシングチャンバの前記内面および前記基板を前記処理ガスにさらすことであって、前記処理ガスは円形ガスフローとして回転して流れ、前記ジメチルアミンのコーティングが、前記前処理プロセス中に、前記プロセッシングチャンバ内面に形成されることと、
原子層堆積プロセス中に前記基板上に窒化タンタル材料を堆積させながら、前記基板をタンタル前駆体ガスおよび窒素前駆体ガスに順次さらすことであって、前記タンタル前駆体ガスがペンタキス(ジメチルアミノ)タンタルを含み、前記原子層堆積プロセスが、前記連続フローを有する前記キャリアガス中へ前記タンタル前駆体ガスおよび前記窒素前駆体ガスを順次パルス的に送って、前記窒化タンタル材料を堆積させることを含むことと、
を含む方法。
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